CN105449513A - Multiple pairs of single-tube beam-combining semiconductor laser devices with beam splitter sets in ladder configuration - Google Patents
Multiple pairs of single-tube beam-combining semiconductor laser devices with beam splitter sets in ladder configuration Download PDFInfo
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- CN105449513A CN105449513A CN201510962341.1A CN201510962341A CN105449513A CN 105449513 A CN105449513 A CN 105449513A CN 201510962341 A CN201510962341 A CN 201510962341A CN 105449513 A CN105449513 A CN 105449513A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
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- Semiconductor Lasers (AREA)
Abstract
The invention discloses multiple pairs of single-tube beam-combining semiconductor laser devices with beam splitter sets in ladder configuration, and belongs to the technical field of semiconductor laser devices. A light beam in the prior art is poor in quality. The multiple pairs of single-tube beam combining semiconductor laser devices are characterized in that one single-tube semiconductor laser device is arranged on each step of the two ladder heat sinks; a pair of single-tube semiconductor laser devices on the steps, at the same height, of two ladder heat sinks is opposite in light emitting direction and the optical axes are overlapped with each other; the optical axes of various pairs of single-tube semiconductor laser devices are parallel to one another; one beam splitter set is arranged in a light path between each pair of single-tube semiconductor laser devices; the beam splitter sets form a beam splitter ladder array; the surface of each beam splitter and the optical axis of an output light of each single-tube semiconductor laser device form an angle of 45 degrees; the surface of each beam splitter is vertical to the step plane of each ladder heat sink; two adjacent beam splitters in one beam splitter set is vertical to each other; the beam splitters in one column of beam splitters in the beam splitter ladder array are parallel to each other; and a common reflection cavity mirror is arranged at one side of each of the reflected lights, in the same direction, of the beam splitters.
Description
Technical field
The present invention relates to and a kind of multipairly respectively there is spectroscope group step arrangement single tube close bundle semiconductor laser, belong to semiconductor laser field.
Background technology
Along with the development of semiconductor laser technology, the power output of single-tube semiconductor laser improves constantly, and such as, 100 microns of wide single tube power outputs of bar reach 24.6 watts, and the continuous operation life-span reaches tens thousand of hours.In order to significantly improve the power output of semiconductor laser further, many single tubes that has been born close bundle technology, and such as, 1 centimetre of bar laser array continuous power output has exceeded kilowatt.
Prior art is closed bundle mode with many single tubes and is improved semiconductor laser power output, which is by the spatially simple split of multiple single-tube semiconductor laser, form one dimension or cubical array, bundle is closed in the space realizing multiple laser, regrettably, the program is carrying high-power while, but beam quality is sacrificed, as not fully up to expectations in exported the monochromaticjty of light, pattern and hot spot light distribution (power density, distribution consistency degree) etc., be difficult to the special requirement meeting the fields such as industry, military affairs, scientific research.In addition, the single tube quantity participating in closing bundle can not be too much, and wavelength also should be identical.
Summary of the invention
While closing bundle semiconductor laser power output at the many single tubes of raising, improve beam quality, realize the conjunction bundle of more, that wavelength is identical or different single-tube semiconductor laser, we have invented and a kind ofly multipairly respectively there is spectroscope group step arrangement single tube close bundle semiconductor laser.
Respectively have in spectroscope group step arrangement single tube conjunction bundle semiconductor laser the multipair of the present invention, be equipped with each single-tube semiconductor laser 1 of fast and slow axis collimating mirror be all fixed on heat sink on, it is characterized in that, as shown in Figure 1, described heat sink be two identical ladders heat sink 2, each step of two ladders heat sink 2 is all provided with a single-tube semiconductor laser 1, and, relatively and optical axis coincidence, the optical axis of each pair of single-tube semiconductor laser 1 is parallel to each other for a pair single-tube semiconductor laser 1 light emission direction on the highly identical step of two ladders heat sink 2; A spectroscope group is all mounted with in light path between often pair of single-tube semiconductor laser 1, each spectroscope group between each pair of single-tube semiconductor laser 1 in light path forms spectroscope 3 ladder array, it is 45° angle, vertical with heat sink 2 step planes of ladder that spectroscope 3 minute surface wherein and single-tube semiconductor laser 1 export light optical axis, adjacent two spectroscopes 3 in a spectroscope group are perpendicular to one another, and each spectroscope 3 in the row spectroscope 3 in spectroscope 3 ladder array is parallel to each other; Often pair of single-tube semiconductor laser 1 wavelength is identical, and each pair of single-tube semiconductor laser 1 wavelength is identical or different; The rank height of each step of two ladders heat sink 2 is identical, and in this rank relative superiority or inferiority, the output plain edge edge of the single-tube semiconductor laser 1 on neighbouring step is overlapping; Shared reflecting cavity mirror 4 is set in each reverberation side, spectroscope 3 same direction, as shown in Figure 2 to 4.
From described scheme, the operating state of every single-tube semiconductor laser 1 is, exports light and is shaped as a branch of thicker directional light by fast and slow axis collimating mirror, be finally divided into three parts after being irradiated to spectroscope group.The each spectroscope of part transmission 3 enters in another single-tube semiconductor laser 1 resonant cavity paired with this single-tube semiconductor laser 1, as shown in Figure 1, the a branch of seed light becoming this resonant cavity participates in the resonance of light in this resonant cavity, by the rear outgoing of the rear facet of this resonant cavity reflection, get back to spectroscope group along original optical path.Two parts produced by the reflection of spectroscope group in addition, the direction of this two parts reverberation is contrary, the row of optical axis and spectroscope 3 ladder array are to parallel, wherein, part reverberation directly becomes the part that single tube closes the conjunction bundle output light of bundle semiconductor laser, and as shown in Figure 1 to 4, another part is irradiated to the shared reflecting cavity mirror 4 that single tube closes bundle semiconductor laser, as shown in Figure 2 to 4, spectroscope group is got back to along original optical path after the light being irradiated to shared reflecting cavity mirror 4 is reflected.After described three part light get back to spectroscope group along original optical path, always some is got back in former single-tube semiconductor laser 1 resonant cavity and again participates in resonance, it is by the respective resonant cavity of a pair single-tube semiconductor laser 1 and this composite resonant cavity interior resonance formed the exterior resonant cavity between single-tube semiconductor laser 1 that this process is equivalent to light beam, and final conjunction bundle can be made to export the monochromaticjty of light for the resonance of this mode and pattern is greatly improved.
Due to often pair of single-tube semiconductor laser 1 step arrangement on two ladders heat sink 2, this makes the operating state difference of often pair of single-tube semiconductor laser 1 be, and respective conjunction bundle exports the height and position difference of light, the hot spot of each height be that banded conjunctions bundle exports light and again closes bundle, formation has relatively high power density, power is evenly distributed, hot spot be length-width ratio closer to 1 the conjunction bundle output light of rectangular shape.
Many the single-tube semiconductor lasers 1 participating in closing bundle are divided into the multipair single-tube semiconductor laser with respective spectroscope group by the present invention, and, described multipair single-tube semiconductor laser is distributed on the heat sink 2 different steps of ladder, these technical measures make the present invention breach existing space and close bundle and the quantitative limitation of polarization involutory bundle unit number, power output significantly improves, also obtain a subsidiary effect, namely the heat dissipating state of single tube conjunction bundle semiconductor laser obviously improves simultaneously.
Further, due to each pair of single-tube semiconductor laser 1 wavelength can be identical, can also be different, therefore, the present invention can either realize the conjunction bundle of identical wavelength laser, also can realize the conjunction bundle of different wave length laser.
Accompanying drawing explanation
Fig. 1 is that the multipair of the present invention respectively has spectroscope group step arrangement single tube conjunction bundle semiconductor laser major part structure and operating state schematic perspective view, and this figure is simultaneously as Figure of abstract.Fig. 2 ~ Fig. 4 is the right view of A-A directional profile in Fig. 1, this three width figure is that the multipair of the present invention respectively has spectroscope group step arrangement single tube conjunction bundle semiconductor laser conjunction bundle output form schematic diagram, shared reflecting cavity mirror wherein in Fig. 2 is level crossing, and the shared reflecting cavity mirror in Fig. 3, Fig. 4 is isosceles right angle prism.
Embodiment
The present invention multipair, respectively there is spectroscope group step arrangement single tube to close in bundle semiconductor laser, be equipped with each single-tube semiconductor laser 1 of fast and slow axis collimating mirror be all fixed on heat sink on, as shown in Figure 1.
Described heat sink be two identical ladders heat sink 2, each step of two ladders heat sink 2 is all provided with a single-tube semiconductor laser 1, and, relatively and optical axis coincidence, the optical axis of each pair of single-tube semiconductor laser 1 is parallel to each other for a pair single-tube semiconductor laser 1 light emission direction on the highly identical step of two ladders heat sink 2.
A spectroscope group is all mounted with in light path between often pair of single-tube semiconductor laser 1, each spectroscope group between each pair of single-tube semiconductor laser 1 in light path forms spectroscope 3 ladder array, it is 45° angle, vertical with heat sink 2 step planes of ladder that spectroscope 3 minute surface wherein and single-tube semiconductor laser 1 export light optical axis, adjacent two spectroscopes 3 in a spectroscope group are perpendicular to one another, and each spectroscope 3 in the row spectroscope 3 in spectroscope 3 ladder array is parallel to each other.The reflectivity of spectroscope 3 is a certain value in 30% ~ 90% scope.The quantity of the spectroscope 3 in spectroscope group is even number, and so design makes spectroscope group can the transmitted light beam laterally offset that causes because of the thickness reason of spectroscope 3 of self-recision.
Often pair of single-tube semiconductor laser 1 wavelength is identical, and each pair of single-tube semiconductor laser 1 wavelength is identical or different.The operation wavelength that is coated with each single-tube semiconductor laser 1 rear facet is all-trans film, and front facet is coated with operation wavelength anti-reflection film, and transmissivity is a certain value in 50 ~ 99% scopes.
The rank height of each step of two ladders heat sink 2 is identical, and in this rank relative superiority or inferiority, the output plain edge edge of the single-tube semiconductor laser 1 on neighbouring step is overlapping.
Shared reflecting cavity mirror 4 is set in each reverberation side, spectroscope 3 same direction, as shown in Figure 2 to 4.Described shared reflecting cavity mirror 4 is level crossing or isosceles right angle prism; Level crossing minute surface is vertical with the optical axis of the light reflected by each spectroscope group, as shown in Figure 2; The bottom surface minute surface of isosceles right angle prism is vertical with the optical axis of the light reflected by each spectroscope group, and as shown in Figure 3, Figure 4, two central plane minute surfaces of isosceles right angle prism are mirror surface; Two central planes of isosceles right angle prism are met mutually with each spectroscope group, as shown in Figure 3, in this scheme, the light of incident isosceles right angle prism is by the first back reflection of two central planes, light through two secondary reflections is got back in different spectroscope groups, wherein a part through the reflection of spectroscope group, continue the resonance participating in different single-tube semiconductor lasers 1 after transmission, the resonator of light width of growing up extends, and closes the quality that bundle exports light and is again improved; Or isosceles right angle prism central plane is met mutually with each spectroscope group, as shown in Figure 4, in this scheme, although the light of incident isosceles right angle prism is also by the first back reflection of two central planes, but, the light of second time reflection directly becomes and closes bundle and export the half of light, and is previously exported light side by side by the conjunction bundle that each spectroscope group reflect, and the rectangular light spot height dimension of total conjunction bundle output light doubles.
Claims (5)
1. one kind multipair respectively have spectroscope group step arrangement single tube close bundle semiconductor laser, be equipped with each single-tube semiconductor laser (1) of fast and slow axis collimating mirror be all fixed on heat sink on, it is characterized in that, described heat sink be two identical ladders heat sink (2), each step of two ladders heat sink (2) is all provided with a single-tube semiconductor laser (1), and, a pair single-tube semiconductor laser (1) light emission direction on two highly identical steps of ladder heat sink (2) relatively and optical axis coincidence, the optical axis of each pair of single-tube semiconductor laser (1) is parallel to each other, a spectroscope group is all mounted with in light path between often pair of single-tube semiconductor laser (1), each spectroscope group between each pair of single-tube semiconductor laser (1) in light path forms spectroscope (3) ladder array, it is 45° angle that spectroscope (3) minute surface wherein and single-tube semiconductor laser (1) export light optical axis, heat sink with ladder (2) step plane is vertical, adjacent two spectroscopes (3) in a spectroscope group are perpendicular to one another, each spectroscope (3) in a row spectroscope (3) in spectroscope (3) ladder array is parallel to each other, often pair of single-tube semiconductor laser (1) wavelength is identical, and each pair of single-tube semiconductor laser (1) wavelength is identical or different, the rank height of each step of two ladders heat sink (2) is identical, and in this rank relative superiority or inferiority, the output plain edge edge of the single-tube semiconductor laser (1) on neighbouring step is overlapping, in reverberation side, each spectroscope (3) same direction, shared reflecting cavity mirror (4) is set.
2. according to claim 1 multipair respectively have spectroscope group step arrangement single tube close bundle semiconductor laser, it is characterized in that, the reflectivity of spectroscope (3) is a certain value in 30% ~ 90% scope.
3. according to claim 1 multipair respectively have spectroscope group step arrangement single tube close bundle semiconductor laser, it is characterized in that, the quantity of the spectroscope (3) in spectroscope group is even number.
4. according to claim 1 multipair respectively have spectroscope group step arrangement single tube close bundle semiconductor laser, it is characterized in that, the operation wavelength that is coated with each single-tube semiconductor laser (1) rear facet is all-trans film, front facet is coated with operation wavelength anti-reflection film, and transmissivity is a certain value in 50 ~ 99% scopes.
5. according to claim 1 multipair respectively have spectroscope group step arrangement single tube close bundle semiconductor laser, it is characterized in that, described shared reflecting cavity mirror (4) is level crossing or isosceles right angle prism; Level crossing minute surface is vertical with the optical axis of the light reflected by each spectroscope group; The bottom surface minute surface of isosceles right angle prism is vertical with the optical axis of the light reflected by each spectroscope group, and two central plane minute surfaces of isosceles right angle prism are mirror surface; Two central planes of isosceles right angle prism are met mutually with each spectroscope group, or isosceles right angle prism central plane is met mutually with each spectroscope group.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510962341.1A CN105449513A (en) | 2015-12-21 | 2015-12-21 | Multiple pairs of single-tube beam-combining semiconductor laser devices with beam splitter sets in ladder configuration |
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| CN201510962341.1A CN105449513A (en) | 2015-12-21 | 2015-12-21 | Multiple pairs of single-tube beam-combining semiconductor laser devices with beam splitter sets in ladder configuration |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108604017A (en) * | 2016-02-22 | 2018-09-28 | 株式会社日立高新技术 | Dichroscope array |
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| CN1815829A (en) * | 2006-03-08 | 2006-08-09 | 中国科学院上海光学精密机械研究所 | Laser beam group beam composite flat plate cavity |
| CN101206311A (en) * | 2006-12-19 | 2008-06-25 | 中国科学院西安光学精密机械研究所 | Laser mutual injection beam-combining coupler |
| CN204088871U (en) * | 2014-09-24 | 2015-01-07 | 中国工程物理研究院应用电子学研究所 | A kind of storied placement passive heat radiation diode laser spectrum synthesizing optical device |
| CN104956555A (en) * | 2013-03-13 | 2015-09-30 | 优志旺电机株式会社 | Semiconductor laser device |
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2015
- 2015-12-21 CN CN201510962341.1A patent/CN105449513A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1815829A (en) * | 2006-03-08 | 2006-08-09 | 中国科学院上海光学精密机械研究所 | Laser beam group beam composite flat plate cavity |
| CN101206311A (en) * | 2006-12-19 | 2008-06-25 | 中国科学院西安光学精密机械研究所 | Laser mutual injection beam-combining coupler |
| CN104956555A (en) * | 2013-03-13 | 2015-09-30 | 优志旺电机株式会社 | Semiconductor laser device |
| CN204088871U (en) * | 2014-09-24 | 2015-01-07 | 中国工程物理研究院应用电子学研究所 | A kind of storied placement passive heat radiation diode laser spectrum synthesizing optical device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108604017A (en) * | 2016-02-22 | 2018-09-28 | 株式会社日立高新技术 | Dichroscope array |
| US11061243B2 (en) | 2016-02-22 | 2021-07-13 | Hitachi High-Tech Corporation | Dichroic-mirror array |
| CN108604017B (en) * | 2016-02-22 | 2022-05-17 | 株式会社日立高新技术 | Dichroic mirror array |
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Application publication date: 20160330 |