CN105449050B - 一种晶体硅太阳能电池组件的制备方法 - Google Patents

一种晶体硅太阳能电池组件的制备方法 Download PDF

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CN105449050B
CN105449050B CN201610014848.9A CN201610014848A CN105449050B CN 105449050 B CN105449050 B CN 105449050B CN 201610014848 A CN201610014848 A CN 201610014848A CN 105449050 B CN105449050 B CN 105449050B
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crystal silicon
solar cell
silicon solar
battery
laminated
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CN105449050A (zh
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许路加
蒋方丹
何广东
金浩
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Zhejiang Jinko Solar Co Ltd
Jinko Solar Co Ltd
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Abstract

本发明属于太阳能电池领域，尤其涉及一种晶体硅太阳能电池组件的制备方法。本发明提供的方法包括以下步骤：a)提供待层压太阳能电池组件，所述待层压太阳能电池组件包括依次相接触的背板、第一粘结层、晶体硅太阳能电池模块、第二粘结层和顶板；所述晶体硅太阳能电池模块为晶体硅太阳能电池片或多个晶体硅太阳能电池片连接成的电池串；b)所述待层压太阳能电池组件在通电条件下进行层压，得到层压后太阳能电池组件；c)将所述层压后太阳能电池组件进行装框，并安装接线盒，得到晶体硅太阳能电池组件。本发明通过在层压处理过程中对晶体硅太阳能电池组件进行通电处理，提升了晶体硅太阳能电池抗光致衰减的性能。

Description

一种晶体硅太阳能电池组件的制备方法
技术领域
本发明属于太阳能电池领域，尤其涉及一种晶体硅太阳能电池组件的制备方法。
背景技术
晶体硅太阳能电池组件是以晶体硅作为光电转换材料的太阳能电池组件，其制备过程大体如下：1)自制或市购晶体硅太阳能电池片；2)将电池片焊接制成电池串；3)将顶板、粘接层、电池串和背板堆叠好后进行层压；4)将层压后的电池组件装框和安装接线盒，得到成品的晶体硅太阳能电池组件。由于晶体硅太阳能电池具有较高的电池效率，且其制备工艺最为成熟，因此晶体硅太阳能电池目前在大规模应用和工业生产中占据主导地位。
晶体硅太阳能电池的光致衰减现象是目前晶体硅太阳能电池产业的一大技术难题。所谓光致衰减现象，是指太阳能电池在光照条件下电池的输出功率出现下降的现象。研究表明，晶体硅太阳能电池产生光致衰减现象的主要原因是P型晶硅电池片中的掺杂硼在光照条件下会与电池片中的氧杂质反映生成硼氧复合体(B-O)，而B-O是一种复合中心，增大了晶硅太能电池的复合，从而降低了电池少数载流子寿命，进而引起电池片及其组成的组件的输出功率降低。
当前，对于晶体硅太阳能电池的光致衰减现象还没有很好的解决办法。因此，改进现有晶体硅太阳能电池组件制备工艺，提升晶体硅太阳能电池制品的抗光致衰减性能是非常必要的。
发明内容
有鉴于此，本发明的目的在于提供一种晶体硅太阳能电池组件的制备方法，采用本发明提供的方法制备晶体硅太阳能电池组件具有较好的抗光致衰减性能。
本发明提供了一种晶体硅太阳能电池组件的制备方法，包括以下步骤：
a)提供待层压太阳能电池组件，所述待层压太阳能电池组件包括依次相接触的背板、第一粘结层、晶体硅太阳能电池模块、第二粘结层和顶板；
所述晶体硅太阳能电池模块为晶体硅太阳能电池片或多个晶体硅太阳能电池片连接成的电池串；
b)所述待层压太阳能电池组件在通电条件下进行层压，得到层压后太阳能电池组件；
c)将所述层压后太阳能电池组件进行装框，并安装接线盒，得到晶体硅太阳能电池组件。
优选的，所述通电的电流为8～20A。
优选的，所述层压的温度为120～200℃。
优选的，所述层压的真空度≤10-4Pa。
优选的，所述层压的时间为10～30min。
优选的，所述电池串按照以下方法制备得到：
检测多个晶体硅太阳能电池片的电池效率；将多个电池效率为预设电池效率取值范围内的晶体硅太阳能电池片进行焊接，得到电池串。
优选的，在检测晶体硅太阳能电池片的电池效率之前，还包括：
对晶体硅太阳能电池片进行加热处理。
优选的，所述加热处理的温度为150～300℃。
优选的，所述加热处理的时间为15～40min。
优选的，所述电池串由多个晶体硅太阳能电池片串联而成。
与现有技术相比，本发明提供了一种晶体硅太阳能电池组件的制备方法。本发明提供的方法包括以下步骤：a)提供待层压太阳能电池组件，所述待层压太阳能电池组件包括依次相接触的背板、第一粘结层、晶体硅太阳能电池模块、第二粘结层和顶板；所述晶体硅太阳能电池模块为晶体硅太阳能电池片或多个晶体硅太阳能电池片连接成的电池串；b)所述待层压太阳能电池组件在通电条件下进行层压，得到层压后太阳能电池组件；c)将所述层压后太阳能电池组件进行装框，并安装接线盒，得到晶体硅太阳能电池组件。本发明通过在层压处理过程中对晶体硅太阳能电池组件进行通电处理，提升了晶体硅太阳能电池抗光致衰减的性能。实验结果表明：采用本发明提供的方法制得的晶体硅太阳能电池组件的光衰比例平均值小于1.5％，且电池组件的均匀性较好。
具体实施方式
下面对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明中，所述电池效率是指晶体硅太阳能电池片的光电转化效率。
本发明提供了一种晶体硅太阳能电池组件的制备方法，包括以下步骤：
a)提供待层压太阳能电池组件，所述待层压太阳能电池组件包括依次相接触的背板、第一粘结层、晶体硅太阳能电池模块、第二粘结层和顶板；
所述晶体硅太阳能电池模块为晶体硅太阳能电池片或多个晶体硅太阳能电池片连接成的电池串；
b)所述待层压太阳能电池组件在通电条件下进行层压，得到层压后太阳能电池组件；
c)将所述层压后太阳能电池组件进行装框，并安装接线盒，得到晶体硅太阳能电池组件。
在本发明中，首先提供待层压太阳能电池组件，所述待层压太阳能电池组件包括依次相接触的背板、第一粘结层、晶体硅太阳能电池模块、第二粘结层和顶板。在本发明中，可以按照以下方式获得待层压太阳能电池组件：在顶板上依次铺设第二粘结层、晶体硅太阳能电池模块、第一粘结层和背板，得到待层压太阳能电池组件。其中，所述背板的作用是保护太阳能电池组件，一方面将防止太阳能电池组件受到环境影响，尤其是湿度温度的波动、化学物质和机械影响，另一方面也要保护环境免受太阳能电池组件的影响。在本发明中，所述背板为符合中国国家标准《晶体硅太阳电池组件用绝缘背板》(GB/T 31034-2014)的背板，优选为聚酯多层膜；所述背板的厚度优选为0.3～0.7mm。
在本发明中，所述第一粘结层用于粘结晶体硅太阳能电池模块与背板，同时提升组件的耐久性和光学特性。所述第一粘结层的材质优选为乙烯-醋酸乙烯共聚物(EVA)；所述第一粘结层的厚度优选为0.2～0.6mm。
在本发明中，所述晶体硅太阳能电池模块为晶体硅太阳能电池片或多个晶体硅太阳能电池片连接成的电池串。本发明对所述晶体硅太阳能电池片的来源没有特别限定，采用市售产品即可，在本发明提供的一个实施例中，所述晶体硅太阳能电池片为P型PERC单晶硅电池片或P型常规单晶硅电池片。在本发明中，所述电池串可以由多个晶体硅太阳能电池片串联而成，也可以由多个晶体硅太阳能电池片并联而成，还可以由多个晶体硅太阳能电池片串联后再并联而成。本发明对所述电池串的制备方法没有特别限定，可以按照以下方法制备：
检测多个晶体硅太阳能电池片的电池效率；将多个电池效率为预设电池效率取值范围内的晶体硅太阳能电池片进行焊接，得到电池串。
在本发明提供的上述电池串的制备方法中，首先，对多个晶体硅太阳能电池片的电池效率进行检测，获得每个晶体硅太阳能电池片的电池效率值。本发明对所述电池效率的检测方法没有特别限定，本领域技术人员按照本领域技术人员熟知的方式进行检测即可。获得每个晶体硅太阳能电池片的电池效率值后，选择电池效率为预设电池效率取值范围内的多个晶体硅太阳能电池片。其中，所述预设电池效率取值范围的区间差值优选为0.01～0.2％，更优选为0.05～0.1％。例如，预设电池效率取值范围为19.6％±0.05％、20.0％±0.05％或20.1％±0.05％。最后，将选择得到的多个晶体硅太阳能电池片进行焊接，得到电池串。在本发明中，按照此方法制备电池串的目的是降低电池串上各晶体硅太阳能电池片电池效率的差异，从而提高最终制得的晶体硅太阳能电池组件的均匀性，在本发明中，所述晶体硅太阳能电池组件的均匀性是指晶体硅太阳能电池组件中各晶体硅太阳能电池片的电池效率的均匀性，各晶体硅太阳能电池片的电池效率差异越小，均匀性越高。
由于晶体硅太阳能电池片的电池效率在后续通电层压过程中可能会发生改变，因此，为了进一步提高最终制得的晶体硅太阳能电池组件的均匀性，在本发明中，在检测晶体硅太阳能电池片的电池效率之前，优选还包括：对晶体硅太阳能电池片进行加热处理。其中，所述加热处理的温度优选为150～300℃，更优选为200～250℃；所述加热处理的时间优选为15～40min，更优选为20～30min。在本发明中，通过对晶体硅太阳能电池片进行加热处理，使其电池效率值更接近经过通电层压得到的晶体硅太阳能电池组件中晶体硅太阳能电池片的电池效率值，从而降低了由于晶体硅太阳能电池片的电池效率在通电层压过程中会发生改变所造成的晶体硅太阳能电池组件的均匀性下降。
在本发明中，所述第二粘结层用于粘结晶体硅太阳能电池组件和顶板，同时提升组件的耐久性和光学特性。所述第二粘结层的材质优选为乙烯-醋酸乙烯共聚物(EVA)；所述第二粘结层的厚度优选为0.2～0.6mm。
在本发明中，所述顶板用于保护晶体硅太阳能电池组件，所述顶板的材质优选为玻璃，更优选为钢化玻璃；所述顶板的厚度优选为2～4mm。
获得待层压太阳能电池组件后，所述待层压太阳能电池组件在通电条件下进行层压。其中，所述通电的电流优选为8～20A，更优选为10～15A；所述层压的温度优选为120～200℃，更优选为140～180℃；所述层压的真空度优选≤10-4Pa，更优选≤10-5Pa；所述层压的时间优选为10～30min，更优选为15～20min。在本发明中，对所述待层压太阳能电池组件在通电条件下进行层压的具体实现方式没有特别限定，可以按照以下方式进行：首先将待层压太阳能电池组件置于层压机中；然后通过导线将所述待层压太阳能电池组件中晶体硅太阳能电池模块的电极与外置的电流源相连接；之后依次开启外置的电流源装置和层压机，从而实现了所述待层压太阳能电池组件在通电条件下进行层压。在通电条件下层压结束后，得到层压后太阳能电池组件。本发明优选对热压结束后得到的层压后太阳能电池组件继续通电，直至所述层压后晶体硅太阳能电池组件冷却至室温。
得到层压后太阳能电池组件后，将层压后太阳能电池组件进行装框，并安装接线盒。本发明对所使用装框方法没有特别限定，装框所使用的边框材料优选为铝合金。本发明对所使用接线盒和安装接线盒的方法没有特别限定，符合中国CNCA/CTS 0003-2010《地面用太阳电池组件主要部件技术条件第1部分：接线盒》的相关要求即可。装框和接线盒安装完毕后，得到晶体硅太阳能电池组件。
本发明通过在层压处理过程中对晶体硅太阳能电池进行通电处理，提升了晶体硅太阳能电池抗光致衰减的性能。在本发明提供的优选实施方式中，通过在层压前对所述晶体硅太阳能电池片进行预处理和分选，提高了最终制得的晶体硅太阳能电池组件的均匀性。实验结果表明：采用本发明提供的方法制得的晶体硅太阳能电池组件的光衰比例平均值小于1.5％，且电池组件的均匀性较好。
为更清楚起见，下面通过以下实施例进行详细说明。
实施例1
制备晶体硅太阳能电池组件
1)将边长为156.5mm的P型常规单晶硅电池片(浙江晶科能源有限公司生产)放入退火炉中，在氮气环境下，加热到200℃，持续30分钟；之后检测加热处理后的单晶硅电池片的电池效率，筛选出180片电池效率为19.6％±0.05％的单晶硅电池片。
2)将180片上述筛选后的电池片按照每组60片(共3组)串联焊接，得到3组电池串；之后按照从上到下“背板/EVA层/电池串/EVA层/钢化玻璃”的结构将电池串、3mm厚钢化玻璃、0.35mm厚EVA和0.65mm厚背板铺放好，得到3块待层压太阳能电池组件。
3)把待层压太阳能电池组件的钢化玻璃面朝下放入层压机内腔，通过导线将外置电流源与待层压太阳能电池组件的电极相连；开启外置电流源，输出电流设置为10A；之后启动层压机，层压机的温度设置为190℃，层压机内腔真空度设置为1×10-5Pa；层压机启动20min后，关闭层压机，待层压机内腔中的太阳能电池组件冷却至室温后，关闭外置电流源，得到层压后太阳能电池组件。
4)将层压后太阳能电池组件进行装框，并对其安装接线盒，得到晶体硅太阳能电池组件。
实施例2
制备晶体硅太阳能电池组件
1)将边长为156.5mm的P型PERC单晶硅电池片(浙江晶科能源有限公司生产)放入退火炉中，在氮气环境下，加热到250℃，持续30分钟；之后检测加热处理后的单晶硅电池片的电池效率，筛选出180片电池效率为20.0％±0.05％的单晶硅电池片。
2)将180片上述筛选后的电池片按照每组60片(共3组)串联焊接，得到电池串；之后按照从上到下“背板/EVA层/电池串/EVA层/钢化玻璃”的结构将电池串、3mm厚钢化玻璃、0.35mm厚EVA和0.65mm厚背板铺放好，得到3块待层压太阳能电池组件。
3)把待层压太阳能电池的钢化玻璃面朝下放入层压机内腔，通过导线将外置电流源与待层压太阳能电池的电池串的电极相连；开启外置电流源，输出电流设置为10A；之后启动层压机，层压机的温度设置为190℃，层压机内腔真空度设置为1×10-5Pa；层压机启动20min后，关闭层压机，待层压机内腔中的太阳能电池冷却至室温后，关闭外置电流源，得到层压后太阳能电池组件。
4)将层压后太阳能电池组件进行装框，并对其安装接线盒，得到晶体硅太阳能电池组件。
实施例3
制备晶体硅太阳能电池组件
1)将边长为156.5mm的P型PERC单晶硅电池片(浙江晶科能源有限公司生产)放入退火炉中，在氮气环境下，加热到250℃，持续30分钟；之后检测加热处理后的单晶硅电池片的电池效率，筛选出180片电池效率为20.1％±0.05％的单晶硅电池片。
2)将180片上述筛选后的电池片按照每组60片(共3组)串联焊接，得到电池串；之后按照从上到下“背板/EVA层/电池串/EVA层/钢化玻璃”的结构将电池串、3mm厚钢化玻璃、0.35mm厚EVA和0.65mm厚背板铺放好，得到3块待层压太阳能电池组件。
3)把待层压太阳能电池的钢化玻璃面朝下放入层压机内腔，通过导线将外置电流源与待层压太阳能电池的电池串的电极相连；开启外置电流源，输出电流设置为10A；之后启动层压机，层压机的温度设置为150℃，层压机内腔真空度设置为1×10-5Pa；层压机启动20min后，关闭层压机，待层压机内腔中的太阳能电池冷却至室温后，关闭外置电流源，得到层压后太阳能电池组件。
4)将层压后太阳能电池组件进行装框，并对其安装接线盒，得到晶体硅太阳能电池组件。
对比例1
制备晶体硅太阳能电池组件
1)将180片电池片效率为19.6％±0.05％、边长为156.5mm的P型常规单晶硅电池片(浙江晶科能源有限公司生产)按照每组60片(共3组)串联焊接，得到电池串；之后按照从上到下“背板/EVA层/电池串/EVA层/钢化玻璃”的结构将电池串、3mm厚钢化玻璃、0.35mm厚EVA和0.65mm厚背板铺放好，得到3块待层压太阳能电池组件。
2)把待层压太阳能电池组件的钢化玻璃面朝下放入层压机内腔，启动层压机，层压机的温度设置为190℃，层压机内腔真空度设置为1×10-5Pa；层压机启动20min后，关闭层压机，待层压机内腔中的太阳能电池组件冷却至室温后，得到层压后太阳能电池组件。
3)将层压后太阳能电池组件进行装框，并对其安装接线盒，得到晶体硅太阳能电池组件。
对比例2
制备晶体硅太阳能电池
1)将边长为156.5mm的P型PERC单晶硅电池片(浙江晶科能源有限公司生产)放入退火炉中，在氮气环境下，加热到250℃，持续30分钟；之后检测加热处理后的单晶硅电池片的电池效率，筛选出180片电池效率为20.0％±0.05％的单晶硅电池片。
2)将180片上述筛选后的电池片按照每组60片(共3组)串联焊接，得到3组电池串；之后按照从上到下“背板/EVA层/电池串/EVA层/钢化玻璃”的结构将电池串、3mm厚钢化玻璃、0.35mm厚EVA和0.65mm厚背板铺放好，得到3块待层压太阳能电池组件。
3)把待层压太阳能电池组件的钢化玻璃面朝下放入层压机内腔；启动层压机，层压机的温度设置为190℃，层压机内腔真空度设置为1×10-5Pa；层压机启动20min后，关闭层压机，待层压机内腔中的太阳能电池组件冷却至室温后，得到层压后太阳能电池组件。
4)将层压后太阳能电池组件进行装框，并对其安装接线盒，得到晶体硅太阳能电池组件。
对比例3
制备晶体硅太阳能电池
1)将将180片电池片效率为20.1％±0.05％、边长为156.5mm的P型PERC单晶硅电池片(浙江晶科能源有限公司生产)按照每组60片(共3组)串联焊接，得到电池串；之后按照从上到下“背板/EVA层/电池串/EVA层/钢化玻璃”的结构将电池串、钢化玻璃(3mm)、EVA(0.35mm)和背板(0.65mm)铺放好，得到3块待层压太阳能电池组件。
2)把待层压太阳能电池的钢化玻璃面朝下放入层压机内腔，通过导线将外置电流源与待层压太阳能电池的电池串的电极相连；开启外置电流源，输出电流设置为10A；之后启动层压机，层压机的温度设置为150℃，层压机内腔真空度设置为1×10-5Pa；层压机启动20min后，关闭层压机，待层压机内腔中的太阳能电池冷却至室温后，关闭外置电流源，得到层压后的晶体硅太阳能电池组件。
3)将层压后的晶体硅太阳能电池组件进行装框，并对其安装接线盒，得到晶体硅太阳能电池组件。
实施例4
晶体硅太阳能电池组件的抗光致衰减性能和均匀性测试
本实施例中组件抗光致衰减测试采用常规的组件光致衰减测试，即外置在户外，当光照总能量达到60kWh时，完成光致衰减过程，进行组件功率测试，此数值与未进行光致衰减前的组件功率相比较得到组件光衰比例，光衰比例数值越小，说明组件的抗光致衰减性能越好。
具体计算公式为：光衰比例＝(光致衰减前功率-光致衰减后功率)/光致衰减前功率
组件均匀性可以通过电致发光成像技术(EL imaging)进行测试，在电致发光成像技术所拍摄的图像中，可以通过观察组件中电池片的亮度来检查组件均匀性。电池片间亮度差异大于20％(即人眼可明显看出其亮度差别)可以界定为均匀性较差；电池片间亮度差异小于或等于20％且大于10％界定为均匀性可接受；电池片间亮度差异小于或等于10％界定为可接受均匀性较好。
电池片间亮度差异＝(电池片A亮度-电池片B亮度)/电池片A亮度，电池片A和电池片B为组件中任何两片电池片，其中电池片A亮度大于或等于电池片B亮度，以此保证电池片间亮度差异计算总是正值。
对实施例1～3和对比例1～3制得的晶体硅太阳能电池组件的抗光致衰减性能和均匀性测试测试结果如表1所示：
表1晶体硅太阳能电池组件的抗光致衰减性能和均匀性测试测试结果
组别 光衰比例平均值(％) 均匀性描述
实施例1 1 均匀性较好
对比例1 2.4 均匀性较好
实施例2 1.1 均匀性较好
对比例2 5.2 均匀性较好
实施例3 1.2 均匀性较好
对比例3 1.5 均匀可接受
通过表1可以看出，本发明通过在层压处理过程中对晶体硅太阳能电池进行通电处理，提升了晶体硅太阳能电池抗光致衰减的性能；通过在层压前对所述晶体硅太阳能电池片进行预处理和分选，提高了最终制得的晶体硅太阳能电池组件的均匀性。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (6)

1.一种晶体硅太阳能电池组件的制备方法，包括以下步骤：
a)对晶体硅太阳能电池片进行加热处理后，检测多个晶体硅太阳能电池片的电池效率；将多个电池效率为预设电池效率取值范围内的晶体硅太阳能电池片进行焊接，得到电池串；
所述加热处理的温度为150～300℃，所述加热处理的时间为15～40min；
b)提供待层压太阳能电池组件，所述待层压太阳能电池组件包括依次相接触的背板、第一粘结层、晶体硅太阳能电池模块、第二粘结层和顶板；
所述晶体硅太阳能电池模块为所述电池串；
c)所述待层压太阳能电池组件在通电条件下进行层压，得到层压后太阳能电池组件；
d)将所述层压后太阳能电池组件进行装框，并安装接线盒，得到晶体硅太阳能电池组件。
2.根据权利要求1所述的制备方法，其特征在于，所述通电的电流为8～20A。
3.根据权利要求1所述的制备方法，其特征在于，所述层压的温度为120～200℃。
4.根据权利要求1所述的制备方法，其特征在于，所述层压的真空度≤10-4Pa。
5.根据权利要求1所述的制备方法，其特征在于，所述层压的时间为10～30min。
6.根据权利要求1述的制备方法，其特征在于，所述电池串由多个晶体硅太阳能电池片串联而成。
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