CN105449016A - Graphene silicon solar cell and manufacturing method - Google Patents
Graphene silicon solar cell and manufacturing method Download PDFInfo
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- CN105449016A CN105449016A CN201510937213.1A CN201510937213A CN105449016A CN 105449016 A CN105449016 A CN 105449016A CN 201510937213 A CN201510937213 A CN 201510937213A CN 105449016 A CN105449016 A CN 105449016A
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 92
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 91
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 239000010703 silicon Substances 0.000 title claims abstract description 75
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 75
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- 238000000034 method Methods 0.000 claims abstract description 22
- 238000012546 transfer Methods 0.000 claims abstract description 14
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- 239000002390 adhesive tape Substances 0.000 claims abstract description 10
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- 239000010949 copper Substances 0.000 claims abstract description 10
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 10
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- 238000002360 preparation method Methods 0.000 claims description 13
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a graphene silicon solar cell and a manufacturing method thereof. The structure of the solar cell comprises a copper adhesive tape bottom layer, a liquid gallium indium alloy electrode layer, an N type silicon wafer layer, a silicon dioxide layer, a PMMA layer (polymethyl methacrylate) protected graphene transparent electrode layer and a silver conductive adhesive electrode layer arranged successively from bottom to top. The technical solution of the invention can obtain high efficiency graphene silicon solar cell and is advantaged by that firstly, damage to the grapheme in the protection layer removing process of the prior transferring method is avoided by adjusting the thickness of the grapheme transfer protection layer PMMA and using the method not removing the protection layer PMMA to transfer the grapheme; secondly, the property of the grapheme is protected well in the transferring process by reserving the PMMA layer, simultaneously P type doping is carried out to the grapheme, the work function of the grapheme is increased, therefore the open-circuit voltage of the graphene silicon solar cell is effectively improved, finally, the reserved PMMA layer has the advantage of an antireflection film, the solar cell of this type remarkably improves the quantum efficiency and energy conversion efficiency of the graphene silicon solar cell under illumination of the same energy.
Description
Technical field
The present invention relates to new forms of energy, field of new, what be specifically related to is a kind of Graphene silicon solar cell.
Background technology
The problems such as the environmental pollutions brought along with exhaustion and a large amount of use fossil energy of fossil energy become increasingly conspicuous, and people urgently wish that searching is renewable, and free of contamination new forms of energy carry out alternative fossil energy.Solar energy, as a kind of one of new forms of energy of renewable cleanliness without any pollution, has been the emphasis of every country research since 21 century always.In the market of current solar cell, what occupy main flow is silica-based solar cell, they have the advantage such as higher battery efficiency and longer battery life, but high-temperature diffusion process adds the production cost of its battery, thus limit it and further develop.In order under the prerequisite keeping greater efficiency, reduce the cost of electricity-generating of solar cell, need to start with from new material new construction, constantly research and develop novel solar battery.2004, Graphene was successfully produced out, and it has the series of advantages such as the carrier mobility of higher light transmittance and superelevation, and research and development Graphene being incorporated into solar cell, with design, become a new direction of solar cell development.The Graphene with perfect material character can form solar cell with the material silicon with maturation process, this depends primarily on the semimetal character of Graphene, when contacting with N-type silicon chip, heterojunction is formed because both work function differences can produce an internal electric field at silicon chip surface, thus under illumination, carrier transition is there is in photon excitation silicon chip, both sides are separated to by internal electric field, electronics exports to external circuit by silicon chip inside, hole exports to external circuit by graphene transparent electrode, thus generation current, achieve the conversion of luminous energy to electric energy.
In the design of Graphene silicon solar cell, the quality of the normally poor graphene transparent electrode of restriction cell conversion efficiency and higher silicon chip surface reflectivity.In the preparation method of traditional Graphene silicon solar cell, the often protective layer of Graphene in its surperficial spin coating one deck protecting glue is as transfer process, by series of physical chemical method, the protecting glue on surface is removed after transferring to silicon chip, but in removal process, usually can cause breaking of Graphene, have impact on the integrality of Graphene; Secondly in the process of removing photoresist, also can introduce more impurity simultaneously, reduce the mobility of Graphene; Thus the Graphene square resistance prepared by this method is higher, second-rate, the performance of the solar cell obtained is also poor; Simultaneously in traditional Graphene silicon solar cell, due to silicon chip surface in visible-range up to the reflectivity of 36%, most of light all can be reflected by silicon chip surface thus do not absorbed, and causes lower quantum efficiency and energy conversion efficiency.
Summary of the invention
The invention provides a kind of Graphene silicon solar cell and preparation method, the preparation method adopted is the way by not going protective layer (PMMA layer) directly to shift Graphene in transfer process, doing so avoids and going in protective layer process the destruction that Graphene produces, the integrality of Graphene and excellent character can be retained preferably, secondly the PMMA layer retaining transfer also can produce the doping of P type to Graphene, thus add the work function of Graphene, the open circuit voltage of the Graphene silicon solar cell increased, the PMMA layer simultaneously retaining transfer also has the effect of anti-reflection film, the reflectivity of silicon chip surface is made to have dropped to less than 15% at visible ray, improve quantum efficiency and the energy conversion efficiency of Graphene silicon solar cell greatly, shift Graphene by Bubbling method simultaneously, achieve the recycling of substrate, significantly reduce production cost, for later industrialized development provides direction.
In order to solve above-mentioned technical problem, technical scheme of the present invention is as follows:
A kind of Graphene silicon solar cell of the present invention, its device architecture comprises copper adhesive tape basalis from bottom to up successively, liquid gallium indium alloy electrode layer, N-type silicon chip layer, silicon oxide layer, graphene transparent electrode layer, PMMA layer, silver conductive adhesive electrode layer.
Preferably, described PMMA layer is in order to meet the effect of high-quality transfer and anti-reflection film, and the scope control of thickness is between 80 ~ 120nm.
Preferably, described graphene transparent electrode layer is the transparency electrode of solar cell, also forms the active area of heterojunction as solar cell with N-type silicon chip layer simultaneously.
Preferably, described graphene transparent electrode layer is individual layer or multi-layer graphene.
The preparation method of Graphene silicon solar cell of the present invention, comprises the steps:
S1, select one piece with the silicon wafer layer of the N-type of silicon dioxide layer, by the silicon dioxide layer in hf etching front, expose the active region of naked silicon area as battery of 3cm*3cm, the silicon dioxide that the back side simultaneously etching the silicon wafer layer of N-type produces due to thermal oxidation.
S2, select one piece of clean metal platinized platinum as substrate, put into chemical vapor deposition reaction chamber, pass into methane and hydrogen, grow high-quality graphene transparent electrode layer.
S3, spin coating layer protective layer PMMA layer at graphene transparent electrode layer surface uniform.
S4, the method shifted by bubbling, the graphene transparent electrode layer with PMMA layer is transferred to the active area on N-type silicon chip layer from base metal platinized platinum, the substrate of metal platinized platinum can be recycled again.
S5, graphene transparent electrode layer are transferred to after on N-type silicon chip layer and are not removed PMMA layer, are evenly coated with the first electrode that last layer silver conductive adhesive layer is tested as external circuit around the graphene transparent electrode layer outside active area.
S6, to brush the liquid gallium indium electrode layer of one deck at the N-type silicon chip layer back side and form ohmic contact with it.
S7, be attached in the substrate of copper adhesive tape by liquid gallium indium electrode layer by Graphene silicon solar cell, copper adhesive tape tests the second electrode as external circuit.
Preferably, in step S2, described graphene transparent electrode layer is individual layer or multi-layer graphene.
Preferably, in step S3, described PMMA layer is in order to meet the effect of high-quality transfer and anti-reflection film, and the scope control of thickness is between 80 ~ 120nm.
Preferably, in step S5, described graphene transparent electrode layer is the transparency electrode of solar cell, simultaneously also with the active area of N-type silicon chip layer as solar cell.
Technique scheme can be found out, owing to present invention employs the way of not going PMMA layer directly to shift Graphene, doing so avoids in the process of removing photoresist the destruction that Graphene produces, the integrality of Graphene and excellent character can be retained preferably, secondly the PMMA layer retaining transfer also can produce the doping of P type to Graphene, thus add the work function of Graphene, the open circuit voltage of the Graphene silicon solar cell increased, the PMMA layer simultaneously retaining transfer also has the effect of anti-reflection film, the reflectivity of silicon chip surface is made to have dropped to less than 15%, improve quantum efficiency and the energy conversion efficiency of Graphene silicon solar cell greatly, shift Graphene by Bubbling method simultaneously, achieve the recycling of substrate, significantly reduce production cost, for later industrialized development provides direction.
Accompanying drawing illustrates:
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, it should be noted that, accompanying drawing, just for the ease of understanding, is not with practical structures equal proportion, wherein:
Fig. 1-Fig. 5 is the structural representation of Graphene silicon solar cell of the present invention in preparation process; In figure, Reference numeral is expressed as: the liquid gallium indium electrode layer of 1-, 2-copper adhesive tape basalis, 3-N type silicon wafer layer, 4-silicon dioxide layer, 5-graphene layer, 6-PMMA layer, 7-silver conductive adhesive layer.
Fig. 6 is the reflectance map of the Graphene silicon solar cell removed PMMA protective layer and retain PMMA protective layer.
Fig. 7 is the current-voltage correlation curve chart of the Graphene silicon solar cell removed PMMA protective layer and retain PMMA protective layer.
Embodiment:
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.
The present invention can implement in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present invention fully will be conveyed to those skilled in the art, the present invention will only be limited by claim.
The preparation method of described a kind of Graphene silicon solar cell, comprises the steps:
S1, as shown in Figure 1, select one piece of resistivity 1-3 Ω m, crystal orientation (100), thickness is the N-type silicon chip layer (3) of 400um, and its surface is with the silicon dioxide layer (4) of 400nm.
S2, as shown in Figure 2, by the silicon dioxide layer (4) in hf etching front, expose the active region of naked silicon area as battery of 3cm*3cm, etch the silicon dioxide that N-type silicon chip layer (3) back side produces due to thermal oxidation simultaneously.
S3, select one piece of clean metal platinized platinum (size is 4cm*4cm), platinized platinum is put into chemical gas phase reaction settling chamber.First in reative cell, repeatedly pass into argon gas 2-3 time, remove foreign gas in cavity; Then pass into hydrogen and be warmed up to 1040 DEG C, keep one hour, annealing in process is carried out to platinized platinum; Pass into methane gas, keep 10 minutes under the environment of 1040 DEG C, allow methane in platinized platinum Surface disintegration nucleation; Finally cooling allows Graphene separate out on platinized platinum surface, the graphene transparent electrode layer (5) of the better quality that grown out.
S4, as shown in Figure 3, using spin coating one deck PMMA layer (6) (polymethyl methacrylate) above Graphene as protection and supporting layer, NaCl graphene transparent electrode layer (5) being put into 1mol/L transfers on N silicon wafer layer (3) by bubbling transfer method, cover out naked silicon area, do not remove PMMA protective layer; Then to be placed on hot plate 120 DEG C, to toast 1 hour, allow graphene transparent electrode layer (5) fully be combined with N-type silicon chip layer (3), form heterojunction.
S5, as shown in Figure 4, be evenly coated with last layer silver conductive adhesive layer (7) around the graphene transparent electrode layer (5) outside active area, its thickness is about 3mm; Then on hot plate 80 DEG C, toast 30 minutes, form good contact with the graphene transparent electrode layer (5) with PMMA layer (6), as the first electrode of external circuit test.
S6, as shown in Figure 5, the gallium indium electrode layer (1) brushing one deck liquid state at the back side of N-type silicon chip layer (3) covers on copper adhesive tape basalis (2), liquid gallium indium electrode layer (1) forms good ohmic contact, the second electrode that copper adhesive tape basalis (2) is tested as external circuit with N-type silicon chip layer (3).
As convertible embodiment of the present invention; the preparation technology of each element in solar cell described in above-mentioned steps is not limited thereto; other treatment process that can reach same effect of the prior art; and select corresponding treatment process all can reach object of the present invention according to different materials, belong to protection scope of the present invention.
Comparative example:
This comparative example provides a kind of traditional Graphene silicon solar cell, its structure and the same embodiment of preparation method, main difference: when Graphene is transferred to after on silicon chip in comparative example, with acetone, PMMA protective layer is removed from graphenic surface.
Test case:
By ultraviolet-uisible spectrophotometer and integrating sphere, the reflectivity to Graphene silicon solar cell described in embodiment and comparative example has carried out test and comparison; By AM1.5 standard sources and Keithley2400, the i-v curve to Graphene silicon solar cell described in embodiment and comparative example has carried out testing (concrete outcome is at accompanying drawing 6 and Fig. 7).
Test result:
Can as can be seen from upper table data, the Graphene silicon solar cell described in the embodiment of the present invention, compared with comparative example, significantly reduces the reflectivity of battery surface, effectively improves the energy conversion efficiency of described solar cell.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (8)
1. a Graphene silicon solar cell, its device architecture comprises copper adhesive tape basalis (1) from bottom to up successively, liquid gallium indium alloy electrode layer (2), N-type silicon chip layer (3), silicon oxide layer (4), graphene transparent electrode layer (5), PMMA layer (6), silver conductive adhesive electrode layer (7).
2. a kind of Graphene silicon solar cell according to claim 1, it is characterized in that, described PMMA layer (6) is in order to meet the effect of high-quality transfer and anti-reflection film, and the scope control of thickness is between 80 ~ 120nm.
3. a kind of Graphene silicon solar cell according to claim 1, it is characterized in that, described graphene transparent electrode layer (5) is the transparency electrode of solar cell, also forms the active area of heterojunction as solar cell with N-type silicon chip layer (3) simultaneously.
4. a kind of Graphene silicon solar cell according to claim 1, it is characterized in that, described graphene transparent electrode layer (5) is individual layer or multi-layer graphene.
5. a preparation method for the Graphene silicon solar cell described in any one of claim 1-4, is characterized in that, comprise the steps:
S1, select one piece with the silicon wafer layer (3) of the N-type of silicon dioxide layer (4), by the silicon dioxide layer (4) in hf etching front, expose the active region of naked silicon area as battery of 3cm*3cm, simultaneously the silicon dioxide that produces due to thermal oxidation of the back side of etching N silicon wafer layer (3);
S2, select one piece of clean metal platinized platinum as substrate, put into chemical vapor deposition reaction chamber, pass into methane and hydrogen, grow high-quality graphene transparent electrode layer (5);
S3, spin coating layer protective layer PMMA layer (6) at graphene transparent electrode layer (5) surface uniform;
S4, the method shifted by bubbling, the graphene transparent electrode layer (5) with PMMA layer (6) is transferred to the active area on N-type silicon chip layer (3) from base metal platinized platinum, the substrate of metal platinized platinum can be recycled again;
S5, graphene transparent electrode layer (5) are transferred to after on N-type silicon chip layer (3) and are not removed PMMA layer (6), are evenly coated with the first electrode that last layer silver conductive adhesive layer (7) is tested as external circuit around the graphene transparent electrode layer (5) outside active area; S6, to brush liquid gallium indium electrode layer (1) of one deck at N-type silicon chip layer (3) back side and form ohmic contact with it;
S7, be attached in copper adhesive tape substrate (2) by liquid gallium indium electrode layer (1) by Graphene silicon solar cell, copper adhesive tape tests the second electrode as external circuit.
6. the preparation method of Graphene silicon solar cell according to claim 5, is characterized in that: in step S2, and described graphene transparent electrode layer (5) is individual layer or multi-layer graphene.
7. the preparation method of Graphene silicon solar cell according to claim 5, is characterized in that: in step S3, and described PMMA layer (6) is in order to meet the effect of high-quality transfer and anti-reflection film, and the scope control of thickness is between 80 ~ 120nm.
8. the preparation method of Graphene silicon solar cell according to claim 5, it is characterized in that: in step S5, described graphene transparent electrode layer (5) is the transparency electrode of solar cell, also forms the active area of heterojunction as solar cell with N-type silicon chip layer (3) simultaneously.
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