CN105448376A - Silicon carbide schottky junction type isotope cell using alpha radioactive sources and manufacturing method thereof - Google Patents
Silicon carbide schottky junction type isotope cell using alpha radioactive sources and manufacturing method thereof Download PDFInfo
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- CN105448376A CN105448376A CN201510786195.1A CN201510786195A CN105448376A CN 105448376 A CN105448376 A CN 105448376A CN 201510786195 A CN201510786195 A CN 201510786195A CN 105448376 A CN105448376 A CN 105448376A
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
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Abstract
The invention discloses a silicon carbide schottky junction type isotope cell using alpha radioactive sources and a manufacturing method thereof. The invention aims at increasing output power, energy conversion efficiency and packaging density. A technical scheme adopted by the cell in the invention is characterized in that a substrate formed by a SiC substrate is included; an upper portion of the substrate is provided with an N-type SiC epitaxial layer; a plurality of steps are arranged on the N-type SiC epitaxial layer; grooves are arranged between adjacent steps; middle positions of tops of the several steps are provided with concave grooves; N-type SiC ohmic contact doped areas are arranged in the concave grooves; upper ends of the N-type SiC ohmic contact doped areas is provided with N-type ohmic contact electrodes whose shapes are the same with the shapes of the N-type SiC ohmic contact doped areas; top positions of two side steps of each N-type ohmic contact electrode are provided with alpha radioactive sources; groove bottoms between the adjacent steps are provided with schottky contact electrodes.
Description
Technical field
The present invention relates to semiconductor devices and semiconductor process techniques field, especially relate to a kind of the silicon carbide Schottky junction isotope battery and the manufacture method thereof that adopt αsource.
Background technology
Isotope battery adopts semiconductor diode as inverting element, and the charged particle ionisation effect in a semiconductor material adopting radioisotope decays to produce converts core radiant to electric energy.In order to obtain the output power of enough high and long-term stability to accelerate to advance it practical, need to be optimized design from inverting element and radioactive source two aspects simultaneously.
In radioactive source, as energy source, its electron flux density is lower mostly to adopt low energy radiator beta-ray (as 63Ni, particle average energy 17.1KeV) at present; Simultaneously due to the self absorption effect of radioactive source, the meaning that the simple intensity by raising radioactive source promotes output power is limited.If adopt high energy radiator beta-ray (as 147Pm etc.), because particle range is comparatively dark, bring difficulty to effective absorption of the raw charge carrier of irradiation.The angle of collecting from ionization energy is said, αsource is more satisfactory as the energy.For 241Am, particle energy high (5.5MeV) but range moderate (in Si material about 28 μm), and mainly with the mode sedimentary energy in the material of ionization, if be used as the output power that energy source effectively can improve battery; But α particle easily causes the irradiation damage of semiconductor devices, reduce the serviceable life of inverting element.
With the semiconductor material with wide forbidden band that SiC, GaN are representative, there is the advantages such as energy gap great ﹑ capability of resistance to radiation is strong, the Built-in potential Gao ﹑ leakage current of the isotope battery inverting element made with it is little, can obtain the open-circuit voltage higher than silicon based cells and energy conversion efficiency in theory.Meanwhile, wide-band gap material and the superior radioresistance characteristic of device, also make to adopt αsource to become possibility as the isotope battery energy.Compared to SiCPiN diode, SiC Schottky diode has technical maturity, as battery surface without advantages such as dead layers, as isotope battery, there is unique advantage.
But adopt the research of the SiC base isotope battery in alpha irradiation source also to there is a lot of problems at present, particularly the isotope battery of report mostly adopts vertical structure at present, namely two electrodes of diode lay respectively in substrate and epitaxial surface, and adopt low-doped thick epitaxial layer fully to absorb the raw charge carrier of irradiation.This structural manufacturing process is comparatively simple, but and is not suitable for αsource, this is because according to radiation volt theory, the irradiation in depletion region and in a neighbouring minority diffusion length is given birth to charge carrier and can be collected.For SiC Schottky diode, even if adopt low-doped epitaxial loayer, width of depletion region is 1 ~ 2um only, and in SiC material, minority diffusion length is only a few um.Because alpha partical range is comparatively dark and energy concentrates release near range, therefore the raw charge carrier of the irradiation of material depths is difficult to abundant absorption.Meanwhile, thick epitaxial loayer also can cause devices in series resistance comparatively large, thus affects conversion efficiency.Therefore, development of new device architecture, the raw charge carrier of irradiation of abundant absorbing material depths, being promote battery conversion efficiency, is the key advancing αsource isotope battery practical as early as possible.
Summary of the invention
In order to solve the problems of the prior art, the present invention proposes one can promote output power and energy conversion efficiency, can packaging density be improved, be conducive to silicon carbide Schottky junction isotope battery and the manufacture method thereof of integrated, practical employing αsource.
In order to realize above object, the technical solution adopted in the present invention is:
A kind of silicon carbide Schottky junction isotope battery adopting αsource, comprise the substrate be made up of SiC substrate, substrate top is provided with N-type SiC epitaxial layer, described N-type SiC epitaxial layer is provided with several steps, groove is provided with between adjacent step, the crown center position of several steps described all injects stroke N-type SiC ohmic contact doped region, upper end, N-type SiC ohmic contact doped region flushes with step top, upper end, N-type SiC ohmic contact doped region is provided with N-type Ohm contact electrode, the shape of described N-type Ohm contact electrode is identical with described N-type SiC ohmic contact doped region shape, the step-shaped top position of described N-type Ohm contact electrode both sides is provided with αsource, channel bottom between described adjacent step is provided with Schottky contact electrode.
Bench height in described N-type SiC epitaxial layer is 5 μm ~ 15 μm, and step width is 10 μm ~ 20 μm, and the spacing between step is 2 μm ~ 5 μm.
The integral thickness of described N-type SiC epitaxial layer is 10 μm ~ 30 μm.
The width of described Schottky contact electrode is identical with step spacing.
Described Schottky contact electrode comprises the ground floor electrode and second layer electrode that set gradually from top to bottom, described ground floor electrode is Ni layer, Ti layer or Pt layer, the thickness of ground floor electrode is 50nm ~ 100nm, and described second layer electrode is Al layer, and thickness is 1000nm ~ 2000nm.
The width of described N-type SiC ohmic contact doped region and described N-type Ohm contact electrode is 0.5 μm ~ 2 μm.
Described N-type Ohm contact electrode comprises the Ni layer and Pt layer that set gradually from top to bottom, and the thickness of described Ni layer is 200nm ~ 400nm, and the thickness of described Pt layer is 50nm ~ 200nm.
Adopt a manufacture method for the silicon carbide Schottky junction isotope battery of αsource, comprise the following steps:
Step one, provide and form substrate by SiC substrate;
Step 2, employing chemical vapour deposition technique epitaxial growth doping content are on the upper surface of the substrate 1 × 10
16cm
-3~ 5 × 10
17cm
-3, thickness is the N-type SiC epitaxial layer of 10 μm ~ 30 μm;
Step 3, pass through SF
6gas, adopting reactive ion dry etching method to etch in N-type SiC epitaxial layer is highly 5 μm ~ 15 μm, and width is 10 μm ~ 20 μm, and spacing is several steps of 2 μm ~ 5 μm, establishes groove between adjacent step;
Step 4, employing ion implantation are 1 × 10 in the upper formation doping content of N-type SiC epitaxial layer
18cm
-3~ 1 × 10
19cm
-3n-type SiC ohmic contact doped region;
Step 5, above N-type SiC ohmic contact doped region deposit Ni layer and Pt layer successively, the thickness of Ni layer is the thickness of 200nm ~ 400nm, Pt layer is 50nm ~ 200nm;
Step 6, at N
2carry out the thermal annealing that temperature is 950 DEG C ~ 1050 DEG C under atmosphere, form on the top of N-type SiC ohmic contact doped region the N-type Ohm contact electrode be made up of a Ni layer and Pt layer;
Step 7, channel bottom between the step in N-type SiC epitaxial layer sputter ground floor electrode and second layer electrode successively, form the Schottky contact electrode be made up of ground floor electrode and second layer electrode, ground floor electrode is Ni layer, Ti layer or Pt layer, thickness is 50nm ~ 100nm, second layer electrode is Al layer, and thickness is 1000nm ~ 2000nm;
Step 8, remove N-type Ohm contact electrode at two ends, step top, only retain middle N-type Ohm contact electrode, and αsource is set in the region of step top removing N-type Ohm contact electrode, namely obtain the silicon carbide Schottky junction isotope battery adopting αsource.
Compared with prior art, the silit PIN type isotope battery of αsource of the present invention is provided with several steps in N-type SiC epitaxial layer, groove is provided with between adjacent step, channel bottom is provided with Schottky contact electrode, groove structure is adopted Schottky contacts to be deep into I layer depth place, effectively can strengthen the absorption to the raw charge carrier of irradiation near alpha partical range, promote output power and energy conversion efficiency.Traditional structure is because main by the raw charge carrier of Schottky depletion region collection irradiation, and Schottky contact electrode can cause the loss of projectile energy; The present invention mainly collects the raw charge carrier of irradiation by the differential gap within the scope of a minority diffusion length near Schottky depletion region, no longer relies on the area of Schottky electrode, thus effectively decreases the energy loss of incident particle, improve energy conversion efficiency.
For the device of vertical structure, the doping content in I district can affect multiple parameters such as electricity Ya ﹑ sensitive volume, hold road Hou Du ﹑ resistance in series, is difficult to compromise; And transversary collects the raw charge carrier of irradiation owing to have employed differential gap, spacing between Schottky contact electrode and N-type Ohm contact electrode is determined by minority diffusion length, therefore open-circuit voltage can be improved by the method for the doping content suitably improving I district N-type SiC epitaxial layer, reduce resistance in series, and make the design of device more flexible.Also can effectively promote irradiation tolerance limit, this is more great for adopting the isotope battery meaning of αsource simultaneously.Battery of the present invention have employed lateral device structure, due to the impact without substrate, easily obtains the resistance in series lower than vertical structure, thus improves fill factor, curve factor.Present invention employs transversary, the volume of battery can be reduced by organic semiconductor device, improve packaging density, be conducive to this minisize nuclear battery and be integrated in MEMS micro-system.Device architecture of the present invention, so responsive unlike vertical structure to Schottky contact electrode metal layer thickness, be easy to technologic realization.
Manufacture method of the present invention adopts reactive ion dry etching method to etch several steps in N-type SiC epitaxial layer, groove is established between adjacent step, ion implantation is adopted to form N-type SiC ohmic contact doped region at the step top of N-type SiC epitaxial layer, above N-type SiC ohmic contact doped region, deposit Ni layer and Pt layer form N-type Ohm contact electrode successively, channel bottom between the step of N-type SiC epitaxial layer sputters the 2nd Ni layer successively and Al layer forms Schottky contact electrode, Schottky contacts is deep into I layer depth place, effectively can strengthen the absorption to the raw charge carrier of irradiation near alpha partical range, promote output power and energy conversion efficiency, have employed lateral device structure, due to the impact without substrate, the resistance in series that easy acquisition is lower than vertical structure, thus raising fill factor, curve factor, simultaneously can reduce the volume of battery by organic semiconductor device, improve packaging density.Manufacturing approach craft of the present invention is simple, and realization is convenient and cost is low, and the battery of acquisition is practical, and application value is high.
Accompanying drawing explanation
Fig. 1 is the structural representation of battery of the present invention;
Fig. 2 is the process flow diagram of manufacture method of the present invention;
Fig. 3 a is the battery structure schematic diagram after manufacture method step 2 of the present invention completes, Fig. 3 b is the battery structure schematic diagram after step 3 completes, Fig. 3 c is the battery structure schematic diagram after step 4 completes, Fig. 3 d is the battery structure schematic diagram after step 5, six completes, and Fig. 3 e is the battery structure schematic diagram after step 7 completes;
Wherein, 1-substrate; 2-N type SiC epitaxial layer; 3-N type SiC ohmic contact doped region; 4-Schottky contact electrode; 5-N type Ohm contact electrode; 6-αsource.
Embodiment
Below in conjunction with specific embodiment and Figure of description, the present invention is further explained.
See Fig. 1, a kind of silicon carbide Schottky junction isotope battery adopting αsource, comprise the substrate 1 be made up of SiC substrate, substrate 1 top is provided with N-type SiC epitaxial layer 2, N-type SiC epitaxial layer 2 is provided with several steps, groove is provided with between adjacent step, bench height in N-type SiC epitaxial layer 2 is 5 μm ~ 15 μm, step width is 10 μm ~ 20 μm, spacing between step is 2 μm ~ 5 μm, the integral thickness of N-type SiC epitaxial layer 2 is 10 μm ~ 30 μm, the crown center position of several steps is injected with N-type SiC ohmic contact doped region 3, upper end, N-type SiC ohmic contact doped region 3 flushes with step top, upper end, N-type SiC ohmic contact doped region 3 is provided with N-type Ohm contact electrode 5, the shape of described N-type Ohm contact electrode 5 is identical with described N-type SiC ohmic contact doped region 3 shape, the width of N-type SiC ohmic contact doped region 3 and N-type Ohm contact electrode 5 is 0.5 μm ~ 2 μm, N-type Ohm contact electrode 5 comprises the Ni layer and Pt layer that set gradually from top to bottom, the thickness of described Ni layer is 200nm ~ 400nm, the thickness of Pt layer is 50nm ~ 200nm.The step-shaped top position of N-type Ohm contact electrode 5 both sides is provided with αsource 6; Channel bottom between adjacent step is provided with Schottky contact electrode 4, the width of Schottky contact electrode 4 is identical with step spacing, Schottky contact electrode 4 comprises the ground floor electrode and second layer electrode that set gradually from top to bottom, ground floor electrode is Ni layer, Ti layer or Pt layer, the thickness of ground floor electrode is 50nm ~ 100nm, second layer electrode is Al layer, and thickness is 1000nm ~ 2000nm.
See Fig. 2, a kind of manufacture method adopting the silicon carbide Schottky junction isotope battery of αsource, comprises the following steps:
Step one, provide and form substrate 1 by SiC substrate;
Step 2, employing chemical vapour deposition technique are 1 × 10 in the upper surface Epitaxial growth doping content of substrate 1
16cm
-3~ 5 × 10
17cm
-3, thickness is the N-type SiC epitaxial layer 2 of 10 μm ~ 30 μm, the battery structure obtained is as shown in Figure 3 a;
Step 3, pass through SF
6gas, adopting reactive ion dry etching method to etch in N-type SiC epitaxial layer 2 is highly 5 μm ~ 15 μm, and width is 10 μm ~ 20 μm, and spacing is several steps of 2 μm ~ 5 μm, establish groove between adjacent step, the battery structure obtained as shown in Figure 3 b;
Step 4, employing ion implantation are 1 × 10 in the upper formation doping content of N-type SiC epitaxial layer 2
18cm
-3~ 1 × 10
19cm
-3n-type SiC ohmic contact doped region 3, the battery structure obtained is as shown in Figure 3 c;
Step 5, above N-type SiC ohmic contact doped region 3 deposit Ni layer and Pt layer successively, the thickness of Ni layer is the thickness of 200nm ~ 400nm, Pt layer is 50nm ~ 200nm;
Step 6, at N
2carry out the thermal annealing two minutes that temperature is 950 DEG C ~ 1050 DEG C under atmosphere, form on the top of N-type SiC ohmic contact doped region 3 the N-type Ohm contact electrode 5 be made up of Ni layer and Pt layer, the battery structure obtained as shown in Figure 3 d;
Step 7, channel bottom between the step in N-type SiC epitaxial layer 2 sputter ground floor electrode and second layer electrode successively, form the Schottky contact electrode 4 be made up of ground floor electrode and second layer electrode, ground floor electrode is Ni layer, Ti layer or Pt layer, thickness is 50nm ~ 100nm, second layer electrode is Al layer, thickness is 1000nm ~ 2000nm, and the battery structure obtained as shown in Figure 3 e;
Step 8, remove N-type Ohm contact electrode 5 at two ends, step top, only retain middle N-type Ohm contact electrode 5, and αsource 6 is set in the region of step top removing N-type Ohm contact electrode 5, namely obtain the silicon carbide Schottky junction isotope battery of employing αsource as shown in Figure 1.
The present invention adopts the silicon carbide Schottky junction isotope battery of αsource to adopt groove structure Schottky contacts to be deep into I layer depth place, effectively can strengthen the absorption to the raw charge carrier of irradiation near alpha partical range, promote output power and energy conversion efficiency.Traditional structure is because main by the raw charge carrier of Schottky depletion region collection irradiation, and Schottky contact electrode can cause the loss of projectile energy; The present invention mainly collects the raw charge carrier of irradiation by the differential gap within the scope of a minority diffusion length near Schottky depletion region, no longer relies on the area of Schottky electrode, thus effectively decreases the energy loss of incident particle, improve energy conversion efficiency.
For the device of vertical structure, the doping content in I district can affect multiple parameters such as electricity Ya ﹑ sensitive volume, hold road Hou Du ﹑ resistance in series, is difficult to compromise; And transversary collects the raw charge carrier of irradiation owing to have employed differential gap, spacing between Schottky contact electrode and N-type Ohm contact electrode is determined by minority diffusion length, therefore open-circuit voltage can be improved by the method for the doping content suitably improving I district N-type SiC epitaxial layer, reduce resistance in series, and make the design of device more flexible.Also can effectively promote irradiation tolerance limit simultaneously, this is more great for adopting the isotope battery meaning of αsource, battery of the present invention have employed lateral device structure, due to the impact without substrate, the resistance in series that easy acquisition is lower than vertical structure, thus raising fill factor, curve factor, simultaneously can reduce the volume of battery by organic semiconductor device, improve packaging density, being conducive to this minisize nuclear battery is integrated in MEMS micro-system, so responsive unlike vertical structure to Schottky contact electrode metal layer thickness, be easy to technologic realization.Manufacture method of the present invention, technique is simple, and realization is convenient and cost is low, and the battery of acquisition is practical, and application value is high.
In sum, the present invention is rationally novel in design, and it is convenient to realize, and be conducive to the energy conversion efficiency and the packaging density that improve the isotope battery adopting αsource, be conducive to integrated, practical, application value is high.
The above is only illustrate specific explanations of the present invention; not the present invention is imposed any restrictions; every above embodiment is done according to the technology of the present invention essence any simple modification, change and equivalent structure change, all still belong in the protection domain of technical solution of the present invention.
Claims (8)
1. one kind adopts the silicon carbide Schottky junction isotope battery of αsource, it is characterized in that, comprise the substrate (1) be made up of SiC substrate, substrate (1) top is provided with N-type SiC epitaxial layer (2), described N-type SiC epitaxial layer (2) is provided with several steps, groove is provided with between adjacent step, the crown center position of several steps described is all injected and is formed with N-type SiC ohmic contact doped region (3), N-type SiC ohmic contact doped region (3) upper end flushes with step top, N-type SiC ohmic contact doped region (3) upper end is provided with N-type Ohm contact electrode (5), the shape of described N-type Ohm contact electrode (5) is identical with described N-type SiC ohmic contact doped region (3) shape, the step-shaped top position of described N-type Ohm contact electrode (5) both sides is provided with αsource (6), channel bottom between described adjacent step is provided with Schottky contact electrode (4).
2. a kind of silicon carbide Schottky junction isotope battery adopting αsource according to claim 1, it is characterized in that, bench height on described N-type SiC epitaxial layer (2) is 5 μm ~ 15 μm, step width is 10 μm ~ 20 μm, and the spacing between step is 2 μm ~ 5 μm.
3. a kind of silicon carbide Schottky junction isotope battery adopting αsource according to claim 2, is characterized in that, the integral thickness of described N-type SiC epitaxial layer (2) is 10 μm ~ 30 μm.
4. a kind of silicon carbide Schottky junction isotope battery adopting αsource according to claim 1, it is characterized in that, the width of described Schottky contact electrode (4) is identical with step spacing.
5. a kind of silicon carbide Schottky junction isotope battery adopting αsource according to claim 4, it is characterized in that, described Schottky contact electrode (4) comprises the ground floor electrode and second layer electrode that set gradually from below to up, described ground floor electrode is Ni layer, Ti layer or Pt layer, the thickness of ground floor electrode is 50nm ~ 100nm, described second layer electrode is Al layer, and thickness is 1000nm ~ 2000nm.
6. a kind of silicon carbide Schottky junction isotope battery adopting αsource according to claim 1, it is characterized in that, the width of described N-type SiC ohmic contact doped region (3) and described N-type Ohm contact electrode (5) is 0.5 μm ~ 2 μm.
7. a kind of silicon carbide Schottky junction isotope battery adopting αsource according to claim 6, it is characterized in that, described N-type Ohm contact electrode (5) comprises the Ni layer and Pt layer that set gradually from below to up, the thickness of described Ni layer is 200nm ~ 400nm, and the thickness of described Pt layer is 50nm ~ 200nm.
8. adopt a manufacture method for the silicon carbide Schottky junction isotope battery of αsource, it is characterized in that, comprise the following steps:
Step one, provide and form substrate (1) by SiC substrate;
Step 2, employing chemical vapour deposition technique are 1 × 10 in the upper surface Epitaxial growth doping content of substrate (1)
16cm
-3~ 5 × 10
17cm
-3, thickness is the N-type SiC epitaxial layer (2) of 10 μm ~ 30 μm;
Step 3, pass through SF
6gas, adopting reactive ion dry etching method to etch in N-type SiC epitaxial layer (2) is highly 5 μm ~ 15 μm, and width is 10 μm ~ 20 μm, and spacing is several steps of 2 μm ~ 5 μm, establishes groove between adjacent step;
Step 4, employing ion implantation are 1 × 10 in the upper formation doping content of N-type SiC epitaxial layer (2)
18cm
-3~ 1 × 10
19cm
-3n-type SiC ohmic contact doped region (3);
Step 5, at top, N-type SiC ohmic contact doped region (3) deposit Ni layer and Pt layer successively, the thickness of Ni layer is the thickness of 200nm ~ 400nm, Pt layer is 50nm ~ 200nm;
Step 6, at N
2carry out the thermal annealing that temperature is 950 DEG C ~ 1050 DEG C under atmosphere, form on the top of N-type SiC ohmic contact doped region (3) the N-type Ohm contact electrode (5) be made up of Ni layer and Pt layer;
Step 7, channel bottom between the step in N-type SiC epitaxial layer (2) sputter ground floor electrode and second layer electrode successively, form the Schottky contact electrode (4) be made up of ground floor electrode and second layer electrode, ground floor electrode is Ni layer, Ti layer or Pt layer, thickness is 50nm ~ 100nm, second layer electrode is Al layer, and thickness is 1000nm ~ 2000nm;
Step 8, remove N-type Ohm contact electrode (5) at two ends, step top, only retain middle N-type Ohm contact electrode (5), and αsource (6) is set in the region at step top removing N-type Ohm contact electrode (5), namely obtain the silicon carbide Schottky junction isotope battery adopting αsource.
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| CN105448376B CN105448376B (en) | 2017-11-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110494929A (en) * | 2017-01-31 | 2019-11-22 | 俄罗斯国立科技大学莫斯科钢铁合金研究所 | Ionising radiation converter and its manufacturing method with cross-linked structure |
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| US20040150229A1 (en) * | 2003-01-31 | 2004-08-05 | Larry Gadeken | Apparatus and method for generating electrical current from the nuclear decay process of a radioactive material |
| CN103021492A (en) * | 2012-12-27 | 2013-04-03 | 长安大学 | Silicon carbide transverse-pin penny-sized nuclear battery and manufacturing method thereof |
| CN104051050A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Parallel type PIN type alpha irradiation battery and preparing method thereof |
-
2015
- 2015-11-16 CN CN201510786195.1A patent/CN105448376B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5396141A (en) * | 1993-07-30 | 1995-03-07 | Texas Instruments Incorporated | Radioisotope power cells |
| US20040150229A1 (en) * | 2003-01-31 | 2004-08-05 | Larry Gadeken | Apparatus and method for generating electrical current from the nuclear decay process of a radioactive material |
| CN103021492A (en) * | 2012-12-27 | 2013-04-03 | 长安大学 | Silicon carbide transverse-pin penny-sized nuclear battery and manufacturing method thereof |
| CN104051050A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Parallel type PIN type alpha irradiation battery and preparing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110494929A (en) * | 2017-01-31 | 2019-11-22 | 俄罗斯国立科技大学莫斯科钢铁合金研究所 | Ionising radiation converter and its manufacturing method with cross-linked structure |
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