CN110556193B - Pm-147 silicon carbide graded N region isotope battery and manufacturing method thereof - Google Patents
Pm-147 silicon carbide graded N region isotope battery and manufacturing method thereof Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 130
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 130
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 19
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 17
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 17
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 17
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000005468 ion implantation Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 230000002285 radioactive effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- VQMWBBYLQSCNPO-NJFSPNSNSA-N promethium-147 Chemical compound [147Pm] VQMWBBYLQSCNPO-NJFSPNSNSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
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- H01L31/0264—Inorganic materials
- H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
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Abstract
The invention discloses a Pm-147 silicon carbide graded N region isotope battery and a manufacturing method thereof, the isotope battery structurally comprises an N-type ohmic contact electrode, an N-type highly-doped SiC substrate, an N-type SiC epitaxial layer and an N-type SiC epitaxial layer from bottom to top, an ion implantation is adopted at the upper part of the N-type SiC epitaxial layer to form a P-type SiC ohmic contact doped region, a P-type ohmic contact electrode is arranged at the center of the top of the P-type SiC ohmic contact doped region, and a SiO (silicon dioxide) is arranged in a region of the top of the P-type SiC ohmic contact doped region except the P-type ohmic contact electrode2Passivation layer on SiO2And a Pm-147 radioisotope source is arranged above the passivation layer. The invention has novel and reasonable design, can effectively solve the problem of collecting the ionization energy deposition of the Pm-147 in the deep part of the material, and effectively improves the output power and the energy conversion efficiency of the isotope battery.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices and semiconductor processes, and particularly relates to a Pm-147 silicon carbide graded N region isotope battery and a manufacturing method thereof.
Background
An isotope battery is an energy conversion device that converts nuclear radiant energy into electrical energy using the photovoltaic effect of radiation generated in a semiconductor device by charged particles generated by decay of a radioisotope. Among the various types of micro energy sources, isotope batteries are considered as the most ideal long-term energy source for MEMS systems due to their advantages of high reliability, easy integration, and strong interference resistance. The high output power is the premise that the miniature nuclear battery can be widely used, but due to the self-absorption effect of the isotope source, the cost and the like, the miniature nuclear battery is difficult to improve the output power by the method for improving the activity of the irradiation source. In order to obtain a sufficiently high and long-term stable output power to accelerate its practical use, it is necessary to optimize the design simultaneously from both the transducer element and the radiation source.
In the aspect of radioactive sources, low-energy beta radioactive sources (for example, beta radioactive sources) are mostly adopted at present63Ni, average energy of particles 17.3KeV) as an energy source, whichThe electron flux density is low; meanwhile, due to the self-absorption effect of the radioactive source, the significance of simply increasing the output power by improving the intensity of the radioactive source is limited. If a high-energy beta radiation source (such as Pm-147, i.e., promethium-147, electron average energy of 62keV) is used, although higher ionization energy deposition can be obtained at the same irradiation source activity, it causes difficulty in effective absorption of irradiation-generated carriers due to the deeper range of the particles.
The wide-bandgap semiconductor material represented by SiC and GaN has the advantages of large bandgap width, strong radiation resistance and the like, and the isotope battery transduction element prepared from the semiconductor material has high built-in potential and small leakage current, and can theoretically obtain higher open-circuit voltage and energy conversion efficiency than a silicon-based battery; meanwhile, the device also has the capability of working for a long time in severe environments such as high-temperature strong radiation and the like. Compared with SiC Schottky diodes, SiC PN or PIN diodes have the advantages of high built-in potential, small leakage current and the like, and isotope batteries made of the diodes have the advantages of high open-circuit voltage, high conversion efficiency and the like.
However, the research of the silicon carbide PN type isotope battery adopting Pm-147 at present has many problems, and the biggest problem is how to sufficiently absorb the ionization energy deposited in the transducer element. As shown in fig. 3, the distribution of radiation-generated carriers generated by Pm-147 is deep, but the peak is close to the surface, and most of the carriers are gathered in the material near the surface. If the thickness of I is too thin, the number of carriers that may be absorbed is reduced. If the I layer is too thick, it can cause electrons to recombine too much before being collected by the substrate electrode.
Disclosure of Invention
The invention aims to provide a Pm-147 silicon carbide graded N region isotope battery and a manufacturing method thereof, and aims to solve the problems.
In order to achieve the purpose, the invention adopts the following technical scheme:
a Pm-147 silicon carbide graded N region isotope battery comprises an N-type highly-doped SiC substrate, an N-type ohmic contact electrode, a first N-type SiC epitaxial layer, a second N-type SiC epitaxial layer, a P-type SiC ohmic contact doping region, a P-type ohmic contact electrode, and SiO2Passivation layer and Pm-147 radioisotope source(ii) a The high-doping SiC substrate comprises an N-type high-doping SiC substrate, an N-type ohmic contact electrode is arranged below the substrate, a first N-type SiC epitaxial layer is arranged on the upper portion of the substrate, a second N-type SiC epitaxial layer is arranged on the upper portion of the first N-type SiC epitaxial layer, a P-type SiC ohmic contact doping region is formed on the upper portion of the second N-type SiC epitaxial layer through ion implantation, a P-type ohmic contact electrode is arranged at the center of the top of the P-type SiC ohmic contact doping region, and a SiO (silicon dioxide) layer is arranged in a region where the P-type ohmic contact electrode is removed from the top of the2Passivation layer on SiO2And a Pm-147 radioisotope source is arranged above the passivation layer.
Furthermore, the total thickness of the first N type SiC epitaxial layer and the second N type SiC epitaxial layer is 15-40 μm.
Further, the thickness of the first N type SiC epitaxial layer is 8-12 μm.
Further, the doping concentration of the second N type SiC epitaxial layer is 1 multiplied by 1014cm-3～1×1016cm-3。
Further, the doping concentration of the first N type SiC epitaxial layer is 1 multiplied by 1016cm-3～5×1017cm-3(ii) a The doping concentration of the first N type SiC epitaxial layer is higher than that of the second N type SiC epitaxial layer. The higher the concentration of the N-type SiC epitaxial layer, the thinner the thickness, and the lower the concentration of the N-type SiC epitaxial layer, the thicker the thickness.
Further, SiO2The thickness of the passivation layer is 10 nm-50 nm.
Further, a manufacturing method of the Pm-147 silicon carbide graded N region isotope battery comprises the following steps:
providing a substrate consisting of an N-type highly-doped SiC substrate;
step two, epitaxially growing the doping concentration of 1 multiplied by 10 on the upper surface of the substrate in the step one by adopting a chemical vapor deposition method16cm-3～5×1017cm-3An N-type SiC epitaxial layer with the thickness of 7-28 mu m;
step three, epitaxially growing the doping concentration of 1 multiplied by 10 on the upper surface of the N type SiC epitaxial layer by adopting a chemical vapor deposition method14cm-3～1×1016cm-3An N-type SiC epitaxial layer with the thickness of 8-12 mu m;
step four, forming the doping concentration of 1 multiplied by 10 on the N type SiC epitaxial layer by adopting an ion implantation method18cm-3～1×1019cm-3P-type SiC ohmic contact doping regions; and performing thermal annealing at 1650-1700 ℃ for 10 minutes in Ar atmosphere;
fifthly, forming the thickness of 10 nm-50 nmSiO on the upper surface of the N-type SiC epitaxial layer by adopting dry oxygen oxidation2A passivation layer;
step six, adopting a reactive ion dry etching method to etch SiO2Etching steps with the width of 1-5 mu m on the passivation layer to expose the P-type SiC ohmic contact doping area;
step seven, sequentially depositing metal Ni with the thickness of 200 nm-400 nm and metal Pt with the thickness of 100 nm-200 nm on a window without a SiO2 passivation layer above the P-type SiC ohmic contact doping area;
step eight, sequentially depositing metal Ni with the thickness of 200 nm-400 nm and metal Pt with the thickness of 100 nm-200 nm below the substrate;
step nine, in N2Carrying out thermal annealing at 950-1050 ℃ for 2 minutes in the atmosphere, wherein SiO is not arranged above the P-type SiC ohmic contact doping region2Forming a P-type ohmic contact electrode on the window of the passivation layer; forming an N-type ohmic contact electrode under the substrate;
step ten, preparing the SiO2And a Pm-147 radioisotope source is arranged on the top of the passivation layer in the region except the P-type ohmic contact electrode.
Compared with the prior art, the invention has the following technical effects:
1. the Pm-147 silicon carbide graded N-region isotope battery adopts two N-type layers with different doping concentrations to replace a conventional N-type layer or an I-type layer, and an electric field is introduced into a diffusion region for generating carriers by irradiation, so that the diffusion motion of the carriers is converted into the combination of diffusion motion and drift motion, the composite loss of the carriers generated by irradiation is favorably reduced, and the output power of the battery is improved.
2. The low doping concentration can obtain a long minority carrier diffusion length, thereby bringing low carrier loss, but at the same time, the low doping concentration can bring the reduction of the irradiation tolerance of the battery, and the high-temperature characteristic can also be degraded due to the reduction of the built-in potential of the battery. After the graded N region is adopted, the combination loss of carriers is reduced, and the dependence of the battery characteristics on low doping concentration is indirectly reduced, so that the doping of the N region can be moderately improved to improve the high-temperature radiation resistance of the battery. Meanwhile, the high doping concentration can also reduce the series resistance and improve the battery characteristics.
3. The manufacturing method of the invention has simple process, convenient realization and low cost.
4. The invention has strong practicability and high popularization and application value.
In conclusion, the invention has novel and reasonable design, is convenient to realize, is beneficial to improving the energy conversion efficiency and the packaging density of the Pm-147 silicon carbide graded N region isotope battery, is beneficial to integration, and has strong practicability and high popularization and application values.
Drawings
Fig. 1 is a front view of a Pm-147 silicon carbide graded N region isotope battery of the present invention.
Fig. 2 is a flow chart of a method for manufacturing the Pm-147 silicon carbide graded N region isotope battery of the present invention.
Fig. 3 is a background art drawing.
Description of reference numerals:
1-N type ohmic contact electrode; 2-a substrate; 3-N type SiC epitaxial layer; 4-N type SiC epitaxial layer; 5-P type SiC ohmic contact doping area; 6-P type ohmic contact electrode; 7-SiO 2 passivation layer; a source of 8-Pm-147 radioisotope.
Detailed Description
The invention is further described below with reference to the accompanying drawings:
referring to fig. 1 and 2, a Pm-147 silicon carbide graded N-region isotope battery includes an N-type highly doped SiC substrate 2, an N-type ohmic contact electrode 1, a first N-type SiC epitaxial layer 3, a second N-type SiC epitaxial layer 4, a P-type SiC ohmic contact doping region 5, a P-type ohmic contact electrode 6, and SiO2A passivation layer 7 and a source of Pm-147 radioisotope 8; n-type highly doped SiC substrate2, an N-type ohmic contact electrode 1 is arranged below the substrate 2, a first N-type SiC epitaxial layer 3 is arranged on the upper portion of the substrate, a second N-type SiC epitaxial layer 4 is arranged on the upper portion of the first N-type SiC epitaxial layer 3, a P-type SiC ohmic contact doped region 5 is formed on the upper portion of the second N-type SiC epitaxial layer 4 through ion implantation, a P-type ohmic contact electrode 6 is arranged at the center of the top of the P-type SiC ohmic contact doped region 5, and SiO is arranged in a region where the P-type ohmic contact electrode 6 is removed from the top of the P-type SiC ohmic contact doped region 52 Passivation layer 7 on SiO2A Pm-147 radioisotope source 8 is arranged above the passivation layer 7.
The total thickness of the first N type SiC epitaxial layer 3 and the second N type SiC epitaxial layer 4 is 15-40 μm.
The thickness of the first N type SiC epitaxial layer 4 is 8 μm to 12 μm.
The doping concentration of the second N type SiC epitaxial layer 4 is 1X 1014cm-3～1×1016cm-3。
The doping concentration of the first N type SiC epitaxial layer 3 is 1X 1016cm-3～5×1017cm-3. The doping concentration of the first N-type SiC epitaxial layer 3 is higher than the doping concentration of the second N-type SiC epitaxial layer 4. The higher the concentration of the N-type SiC epitaxial layer, the thinner the thickness, and the lower the concentration of the N-type SiC epitaxial layer, the thicker the thickness.
SiO2The thickness of the passivation layer 7 is 10nm to 50 nm.
A manufacturing method of a Pm-147 silicon carbide graded N region isotope battery comprises the following steps:
providing a substrate consisting of an N-type highly-doped SiC substrate;
step two, epitaxially growing the doping concentration of 1 multiplied by 10 on the upper surface of the substrate in the step one by adopting a chemical vapor deposition method16cm-3～5×1017cm-3An N-type SiC epitaxial layer 3 with a thickness of 7-28 μm;
step three, epitaxially growing the doping concentration of 1 × 10 on the upper surface of the N-type SiC epitaxial layer 3 by adopting a chemical vapor deposition method14cm-3～1×1016cm-3An N-type SiC epitaxial layer 4 with the thickness of 8-12 mu m;
step four, forming the doping concentration of 1 × 10 on the N-type SiC epitaxial layer 4 by adopting an ion implantation method18cm-3～1×1019cm-3P-type SiC ohmic contact doping region 5; and performing thermal annealing at 1650-1700 ℃ for 10 minutes in Ar atmosphere;
fifthly, forming the thickness of 10 nm-50 nmSiO on the upper surface of the N-type SiC epitaxial layer 4 by adopting dry oxygen oxidation2 A passivation layer 7;
step six, adopting a reactive ion dry etching method to etch SiO2Etching steps with the width of 1-5 mu m on the passivation layer 7 to expose the P-type SiC ohmic contact doping region 5;
seventhly, sequentially depositing metal Ni with the thickness of 200-400 nm and metal Pt with the thickness of 100-200 nm on a window without a SiO2 passivation layer 7 above the P-type SiC ohmic contact doping area 5;
step eight, sequentially depositing metal Ni with the thickness of 200 nm-400 nm and metal Pt with the thickness of 100 nm-200 nm below the substrate 2;
step nine, in N2Thermal annealing is carried out for 2 minutes at the temperature of 950-1050 ℃ under the atmosphere, and SiO does not exist above the P-type SiC ohmic contact doping region 52Forming a P-type ohmic contact electrode 6 on the window of the passivation layer 7; forming an N-type ohmic contact electrode 1 below the substrate 2;
step ten, preparing the SiO2The region on the top of the passivation layer 7 except the P-type ohmic contact electrode 6 is provided with a Pm-147 radioisotope source 8.
Claims (4)
1. The Pm-147 silicon carbide graded N-region isotope battery is characterized by comprising an N-type highly-doped SiC substrate (2), an N-type ohmic contact electrode (1), a first N-type SiC epitaxial layer (3), a second N-type SiC epitaxial layer (4), a P-type SiC ohmic contact doped region (5), a P-type ohmic contact electrode (6), and SiO2A passivation layer (7) and a Pm-147 radioisotope source (8); an N-type highly-doped SiC substrate (2), an N-type ohmic contact electrode (1) is arranged below the N-type highly-doped SiC substrate (2), a first N-type SiC epitaxial layer (3) is arranged on the upper part of the N-type highly-doped SiC substrate (2), and a second N-type SiC epitaxial layer is arranged on the upper part of the first N-type SiC epitaxial layer (3)(4) Forming a P-type SiC ohmic contact doped region (5) on the upper part of the second N-type SiC epitaxial layer (4) by adopting ion implantation, arranging a P-type ohmic contact electrode (6) at the center of the top of the P-type SiC ohmic contact doped region (5), and arranging SiO in a region of the top of the P-type SiC ohmic contact doped region (5) except the P-type ohmic contact electrode (6)2A passivation layer (7) on SiO2A Pm-147 radioisotope source (8) is arranged above the passivation layer (7);
the thickness of the first N-type SiC epitaxial layer (3) is 8-12 mu m;
the doping concentration of the second N-type SiC epitaxial layer (4) is 1 multiplied by 1014cm-3～1×1016cm-3；
The doping concentration of the first N-type SiC epitaxial layer (3) is 1 x 1016cm-3～5×1017cm-3(ii) a The doping concentration of the first N-type SiC epitaxial layer (3) is higher than that of the second N-type SiC epitaxial layer (4); the higher the concentration of the N-type SiC epitaxial layer, the thinner the thickness, and the lower the concentration of the N-type SiC epitaxial layer, the thicker the thickness.
2. The Pm-147 silicon carbide graded N-region isotope battery according to claim 1, wherein the total thickness of the first N-type SiC epitaxial layer (3) and the second N-type SiC epitaxial layer (4) is 15 μm to 40 μm.
3. The Pm-147 silicon carbide graded N region isotope battery of claim 1, wherein SiO is2The thickness of the passivation layer (7) is 10 nm-50 nm.
4. The method for manufacturing the Pm-147 silicon carbide graded N region isotope battery according to claim 1, comprising the steps of:
providing an N-type highly-doped SiC substrate consisting of an N-type highly-doped SiC substrate;
step two, epitaxially growing the doping concentration of 1 multiplied by 10 on the upper surface of the N-type highly doped SiC substrate in the step one by adopting a chemical vapor deposition method16cm-3～5×1017cm-3And a first N-type SiC epitaxial layer having a thickness of 7 to 28 μmA layer (3);
step three, epitaxially growing the doping concentration of 1 × 10 on the upper surface of the first N-type SiC epitaxial layer (3) by adopting a chemical vapor deposition method14cm-3～1×1016cm-3A second N-type SiC epitaxial layer (4) with the thickness of 8-12 mu m;
fourthly, forming the doping concentration of 1 multiplied by 10 on the second N type SiC epitaxial layer (4) by adopting an ion implantation method18cm-3～1×1019cm-3The P-type SiC ohmic contact doping region (5); and performing thermal annealing at 1650-1700 ℃ for 10 minutes in Ar atmosphere;
fifthly, forming the thickness of 10 nm-50 nmSiO on the upper surface of the second N type SiC epitaxial layer (4) by adopting dry oxygen oxidation2A passivation layer (7);
step six, adopting a reactive ion dry etching method to etch SiO2Etching steps with the width of 1-5 mu m on the passivation layer (7) to expose the P-type SiC ohmic contact doping region (5);
step seven, SiO does not exist above the P-type SiC ohmic contact doped region (5)2Sequentially depositing metal Ni with the thickness of 200 nm-400 nm and metal Pt with the thickness of 100 nm-200 nm on the window of the passivation layer (7);
step eight, sequentially depositing metal Ni with the thickness of 200 nm-400 nm and metal Pt with the thickness of 100 nm-200 nm below the N-type highly doped SiC substrate (2);
step nine, in N2Thermal annealing is carried out for 2 minutes at the temperature of 950-1050 ℃ under the atmosphere, and SiO does not exist above the P-type SiC ohmic contact doped region (5)2Forming a P-type ohmic contact electrode (6) on the window of the passivation layer (7); forming an N-type ohmic contact electrode (1) below the N-type highly doped SiC substrate (2);
step ten, preparing the SiO2The Pm-147 radioisotope source (8) is arranged on the top of the passivation layer (7) except the region of the P-type ohmic contact electrode (6).
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| CN104051046A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Sandwich serial-type PIN-structure beta irradiation battery and manufacturing method thereof |
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| US7939986B2 (en) * | 2005-08-25 | 2011-05-10 | Cornell Research Foundation, Inc. | Betavoltaic cell |
| CN101325093A (en) * | 2008-07-23 | 2008-12-17 | 西安电子科技大学 | Minisize nuclear battery |
| CN104051043A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | 3D type PIN structure alpha irradiation battery and manufacturing method thereof |
| CN104051046A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Sandwich serial-type PIN-structure beta irradiation battery and manufacturing method thereof |
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