CN105448376B - Using the silicon carbide Schottky junction isotope battery and its manufacture method of αsource - Google Patents
Using the silicon carbide Schottky junction isotope battery and its manufacture method of αsource Download PDFInfo
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- CN105448376B CN105448376B CN201510786195.1A CN201510786195A CN105448376B CN 105448376 B CN105448376 B CN 105448376B CN 201510786195 A CN201510786195 A CN 201510786195A CN 105448376 B CN105448376 B CN 105448376B
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- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
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Abstract
The invention discloses a kind of silicon carbide Schottky junction isotope battery of use αsource and its manufacture method, it is therefore intended that：Lift power output and energy conversion efficiency, improve packaging density, the technical scheme that battery of the invention is used for：Including the substrate being made up of SiC substrate, substrate top is provided with N-type SiC epitaxial layer, the N-type SiC epitaxial layer is provided with several steps, groove is provided between adjacent step, the crown center position of several steps opens up fluted, N-type SiC ohmic contact doped region is provided with groove, N-type SiC ohmic contact doped region upper end is provided with N-type Ohm contact electrode, the shape of the N-type Ohm contact electrode is identical with the N-type SiC ohmic contact doped region shape, and αsource is provided with the step tip position of the N-type Ohm contact electrode both sides；Channel bottom between the adjacent step is provided with Schottky contact electrode.
Description
Technical field
The present invention relates to semiconductor devices and semiconductor process technique field, αsource is used more particularly, to one kind
Silicon carbide Schottky junction isotope battery and its manufacture method.
Background technology
Isotope battery is the band produced using radioisotope decays as inverting element using semiconductor diode
Core radiant is converted into electric energy by the ionisation effect of charged particle in a semiconductor material.It is sufficiently high and steady in a long-term in order to obtain
It is practical, it is necessary to while optimizing design in terms of inverting element and radioactive source two to accelerate propulsion for power output.
In terms of radioactive source, low energy radiator beta-ray (such as 63Ni, particle average energy 17.1KeV) conduct is mostly used at present
Energy source, its electron flux density is relatively low；Simultaneously because the self absorption effect of radioactive source, the simple intensity by improving radioactive source
It is limited come the meaning that lifts power output.If using high energy radiator beta-ray (such as 147Pm), because particle range is deeper, to spoke
Effective absorption according to raw carrier brings difficulty.From the perspective of from the angle that ionization energy is collected, αsource is to compare reason as the energy
Think.By taking 241Am as an example, particle energy height (5.5MeV) but range is moderate (in Si materials about 28 μm), and it is main to ionize
Mode sedimentary energy in the material, the power output of battery can be effectively improved used as energy source；But α particles are easy
The irradiation damage of semiconductor devices is caused, the service life of inverting element is reduced.
Using SiC, GaN as the semiconductor material with wide forbidden band of representative, have the advantages that energy gap great ﹑ capability of resistance to radiations are strong,
The Built-in potential Gao ﹑ leakage currents for the isotope battery inverting element being made of it are small, can obtain in theory than silicon based cells more
High open-circuit voltage and energy conversion efficiency.Meanwhile, wide-band gap material and the superior radioresistance characteristic of device also to use α
Radioactive source is possibly realized as the isotope battery energy.Compared to SiC PiN diodes, SiC Schottky diode has technique
It is ripe, as battery surface without dead layer the advantages of, there is unique advantage as isotope battery.
But at present using alpha irradiation source SiC base isotope batteries research there is also it is many problem of, it is particularly current
The isotope battery of report is mostly located on substrate and epitaxial surface respectively using two electrodes of vertical structure, i.e. diode, and
Low-doped thick epitaxial layer is used to fully absorb the raw carrier of irradiation.This structural manufacturing process is relatively simple, but is not particularly suited for α and puts
Source is penetrated, because, irradiation life current-carrying depletion region in and its a neighbouring minority diffusion length in theoretical according to radiation volt
Son can be collected.For SiC Schottky diode, even if using low-doped epitaxial layer, width of depletion region only 1~2um,
And minority diffusion length is only a few um in SiC material.Because alpha partical range relatively depth and energy in range are concentrated around release, because
The irradiation life carrier of this material depths is difficult to fully absorb.Meanwhile, it is larger that thick epitaxial layer also results in devices in series resistance,
So as to influence conversion efficiency.Therefore, development of new device architecture, fully absorbs the irradiation life carrier of material depths, is lifting
Battery conversion efficiency, is to promote αsource isotope battery practical key as early as possible.
The content of the invention
In order to solve the problems of the prior art, the present invention proposes that one kind can lift power output and energy conversion effect
Rate, it is possible to increase packaging density, is conducive to the silicon carbide Schottky junction isotope of integrated, practical use αsource
Battery and its manufacture method.
In order to realize the above object the technical solution adopted in the present invention is：
A kind of silicon carbide Schottky junction isotope battery of use αsource, including the substrate being made up of SiC substrate,
Substrate top is provided with N-type SiC epitaxial layer, and the N-type SiC epitaxial layer is provided between several steps, adjacent step and is provided with
Groove, the crown center position of several steps, which injects stroke, N-type SiC ohmic contact doped region, SiC ohm of N-type
Contact doping area upper end at the top of step with flushing, and N-type SiC ohmic contact doped region upper end is provided with N-type Ohm contact electrode, institute
The shape for stating N-type Ohm contact electrode is identical with the N-type SiC ohmic contact doped region shape, the N-type Ohm contact electrode
αsource is provided with the step tip position of both sides；Channel bottom between the adjacent step is provided with Schottky contacts
Electrode.
Shoulder height in the N-type SiC epitaxial layer is 5 μm~15 μm, and step width is 10 μm~20 μm, between step
Spacing be 2 μm~5 μm.
The integral thickness of the N-type SiC epitaxial layer is 10 μm~30 μm.
The width of the Schottky contact electrode is identical with step spacing.
The Schottky contact electrode includes the first layer electrode and second layer electrode that set gradually from top to bottom, and described the
One layer of electrode is Ni layers, Ti layers or Pt layers, and the thickness of first layer electrode is 50nm~100nm, and the second layer electrode is Al layers,
Thickness is 1000nm~2000nm.
The width of the N-type SiC ohmic contact doped region and the N-type Ohm contact electrode is 0.5 μm~2 μm.
The N-type Ohm contact electrode includes the Ni layers set gradually from top to bottom and Pt layers, and described Ni layers thickness is
200nm~400nm, described Pt layers thickness is 50nm~200nm.
A kind of manufacture method of the silicon carbide Schottky junction isotope battery of use αsource, comprises the following steps：
Substrate is constituted by SiC substrate Step 1: providing；
Step 2: use chemical vapour deposition technique on the upper surface of the substrate epitaxial growth doping concentration for 1 × 1016cm-3
~5 × 1017cm-3, thickness be 10 μm~30 μm of N-type SiC epitaxial layer；
Step 3: passing through SF6Gas, use reactive ion dry etching method etched in N-type SiC epitaxial layer height for
5 μm~15 μm, width is 10 μm~20 μm, and spacing is to set groove between 2 μm~5 μm several steps, adjacent step；
Step 4: using ion implantation in the upper formation doping concentration of N-type SiC epitaxial layer for 1 × 1018cm-3~1 ×
1019cm-3N-type SiC ohmic contact doped region；
Step 5: depositing Ni layers and Pt layers successively above N-type SiC ohmic contact doped region, Ni layers of thickness is 200nm
~400nm, Pt layers of thickness is 50nm~200nm；
Step 6: in N2Enter the thermal annealing that trip temperature is 950 DEG C~1050 DEG C under atmosphere, in the doping of N-type SiC ohmic contact
The N-type Ohm contact electrode being made up of the first Ni floor and Pt floor is formed at the top in area；
Step 7: the channel bottom between the step in N-type SiC epitaxial layer sputters first layer electrode and second layer electricity successively
Pole, forms the Schottky contact electrode being made up of first layer electrode and second layer electrode, and first layer electrode is Ni layers, Ti layers or Pt
Layer, thickness is 50nm~100nm, and second layer electrode is Al layers, and thickness is 1000nm~2000nm；
Step 8: removing the N-type Ohm contact electrode at the two ends at the top of step, only retain the N-type Ohmic contact electricity of centre
Pole, and the region of removing N-type Ohm contact electrode sets αsource at the top of step, that is, obtains the carborundum using αsource
Schottky junction type isotope battery.
Compared with prior art, the carborundum PIN-type isotope battery of αsource of the invention is in N-type SiC epitaxial layer
Provided with several steps, groove is provided between adjacent step, channel bottom is provided with Schottky contact electrode, using groove structure
Schottky contacts are deep at I layer depths, can effectively strengthen the absorption to irradiating raw carrier near alpha partical range, lifting
Power output and energy conversion efficiency.Traditional structure mainly by Schottky depletion region because collect the raw carrier of irradiation, Schottky
Contact electrode can cause the loss of projectile energy；The present invention is mainly by a minority diffusion length near Schottky depletion region
In the range of differential gap collect the raw carrier of irradiation, the area of Schottky electrode is eliminated the reliance on, so as to be effectively reduced incidence
The energy loss of particle, improves energy conversion efficiency.
For the device of vertical structure, the doping concentration in I areas can influence hold roads electricity Ya ﹑ sensitive volumes Hou Du ﹑ series resistances etc.
Multiple parameters, it is difficult to compromise；And transversary collects the raw carrier of irradiation as a result of differential gap, Schottky contact electrode with
Spacing between N-type Ohm contact electrode determines by minority diffusion length, therefore can be by properly increasing I areas N-type SiC extensions
The method of the doping concentration of layer improves open-circuit voltage, reduces series resistance, and make the design of device more flexible.Also may be used simultaneously
Tolerance limit is irradiated with effective lifting, this is for more great using the isotope battery meaning of αsource.The battery of the present invention is adopted
With lateral device structure, due to the influence without substrate, the series resistance lower than vertical structure is readily available, so as to improve
Fill factor, curve factor.Present invention employs transversary, the volume of battery can be reduced with organic semiconductor device, packaging density is improved, has
It is integrated into beneficial to the minisize nuclear battery in MEMS micro-systems.The device architecture of the present invention, to Schottky contact electrode metal thickness
Degree is so sensitive unlike vertical structure, it is easy to technologic to realize.
The manufacture method of the present invention etches several using reactive ion dry etching method in N-type SiC epitaxial layer
Groove is set between rank, adjacent step, forming SiC ohm of N-type at the top of the step of N-type SiC epitaxial layer using ion implantation connects
Doped region is touched, Ni layers and Pt layers composition N-type Ohm contact electrode are deposited successively in the top of N-type SiC ohmic contact doped region,
Channel bottom between the step of N-type SiC epitaxial layer sputters the 2nd Ni layers and Al layers of composition Schottky contact electrode successively, by Xiao Te
Base contact is deep at I layer depths, can effectively be strengthened the absorption to irradiating raw carrier near alpha partical range, be lifted output work
Rate and energy conversion efficiency, employ lateral device structure, due to the influence without substrate, are readily available lower than vertical structure
Series resistance, so as to improve fill factor, curve factor, while the volume of battery can be reduced with organic semiconductor device, improve packaging density.
The manufacturing approach craft of the present invention is simple, realizes that convenient and cost is low, the battery of acquisition is practical, application value is high.
Brief description of the drawings
Fig. 1 is the structural representation of battery of the present invention；
Fig. 2 is the flow chart of manufacture method of the present invention；
Fig. 3 a are the battery structure schematic diagram after the completion of manufacture method step 2 of the present invention, and Fig. 3 b is after the completion of step 3
Battery structure schematic diagram, Fig. 3 c are the battery structure schematic diagram after the completion of step 4, and Fig. 3 d are the battery Step 5: after the completion of six
Structural representation, Fig. 3 e are the battery structure schematic diagram after the completion of step 7；
Wherein, 1- substrates；2-N type SiC epitaxial layers；3-N type SiC ohmic contact doped regions；4- Schottky contact electrodes；5-
N-type Ohm contact electrode；6- αsources.
Embodiment
The present invention is further explained with reference to specific embodiment and Figure of description.
Referring to Fig. 1, a kind of silicon carbide Schottky junction isotope battery of use αsource, including it is made up of SiC substrate
Substrate 1, the top of substrate 1 is provided with N-type SiC epitaxial layer 2, and N-type SiC epitaxial layer 2 is provided with several steps, adjacent step it
Between be provided with groove, the shoulder height in N-type SiC epitaxial layer 2 is 5 μm~15 μm, and step width is 10 μm~20 μm, between step
Spacing be 2 μm~5 μm, the integral thickness of N-type SiC epitaxial layer 2 is 10 μm~30 μm, the crown center position of several steps
N-type SiC ohmic contact doped region 3 is injected with, the upper end of N-type SiC ohmic contact doped region 3 at the top of step with flushing, N-type SiC Europe
The upper end of nurse contact doping area 3 is provided with N-type Ohm contact electrode 5, shape and the N-type of the N-type Ohm contact electrode 5
The shape of SiC ohmic contact doped region 3 is identical, and the width of N-type SiC ohmic contact doped region 3 and N-type Ohm contact electrode 5 is
0.5 μm~2 μm, N-type Ohm contact electrode 5 includes the Ni layers set gradually from top to bottom and Pt layers, and described Ni layers thickness is
200nm~400nm, Pt layers of thickness is 50nm~200nm.Set on the step tip position of the both sides of N-type Ohm contact electrode 5
There is αsource 6；Channel bottom between adjacent step is provided with Schottky contact electrode 4, the width of Schottky contact electrode 4
Identical with step spacing, Schottky contact electrode 4 includes the first layer electrode and second layer electrode set gradually from top to bottom, the
One layer of electrode is Ni layers, Ti layers or Pt layers, and the thickness of first layer electrode is 50nm~100nm, and second layer electrode is Al layers, thickness
For 1000nm~2000nm.
Referring to Fig. 2, a kind of manufacture method of the silicon carbide Schottky junction isotope battery of use αsource, including with
Lower step：
Substrate 1 is constituted by SiC substrate Step 1: providing；
Step 2: using chemical vapour deposition technique in the upper surface Epitaxial growth doping concentration of substrate 1 for 1 × 1016cm-3~5 × 1017cm-3, thickness be 10 μm~30 μm of N-type SiC epitaxial layer 2, obtained battery structure is as shown in Figure 3 a；
Step 3: passing through SF6Gas, height is etched using reactive ion dry etching method in N-type SiC epitaxial layer 2
For 5 μm~15 μm, width is 10 μm~20 μm, and spacing is to set groove between 2 μm~5 μm several steps, adjacent step, is obtained
The battery structure arrived is as shown in Figure 3 b；
Step 4: using ion implantation in the upper formation doping concentration of N-type SiC epitaxial layer 2 for 1 × 1018cm-3~1 ×
1019cm-3N-type SiC ohmic contact doped region 3, obtained battery structure is as shown in Figure 3 c；
Step 5: depositing Ni layers and Pt layers successively in the top of N-type SiC ohmic contact doped region 3, Ni layers of thickness is
200nm~400nm, Pt layers of thickness is 50nm~200nm；
Step 6: in N2Enter the thermal annealing two minutes that trip temperature is 950 DEG C~1050 DEG C under atmosphere, SiC ohm connect in N-type
The top for touching doped region 3 is formed by the Ni layers and Pt layers N-type Ohm contact electrode 5 constituted, obtained battery structure such as Fig. 3 d institutes
Show；
Step 7: the channel bottom between the step in N-type SiC epitaxial layer 2 sputters first layer electrode and the second layer successively
Electrode, forms the Schottky contact electrode 4 being made up of first layer electrode and second layer electrode, and first layer electrode is Ni layers, Ti layers
Or Pt layers, thickness is 50nm~100nm, and second layer electrode is Al layers, and thickness is 1000nm~2000nm, obtained battery structure
As shown in Figure 3 e；
Step 8: removing the N-type Ohm contact electrode 5 at the two ends at the top of step, only retain the N-type Ohmic contact electricity of centre
Pole 5, and the region of removing N-type Ohm contact electrode 5 sets αsource 6 at the top of step, that is, obtains use α as shown in Figure 1
The silicon carbide Schottky junction isotope battery of radioactive source.
The present invention uses groove structure by Schottky contacts using the silicon carbide Schottky junction isotope battery of αsource
It is deep at I layer depths, can effectively strengthens the absorption to irradiating raw carrier near alpha partical range, lifting power output and energy
Measure transformation efficiency.Traditional structure mainly by Schottky depletion region because collect the raw carrier of irradiation, and Schottky contact electrode can be made
Into the loss of projectile energy；The present invention is mainly by the neutrality near Schottky depletion region in the range of a minority diffusion length
The raw carrier of irradiation is collected in area, eliminates the reliance on the area of Schottky electrode, so that the energy for being effectively reduced incoming particle is damaged
Lose, improve energy conversion efficiency.
For the device of vertical structure, the doping concentration in I areas can influence hold roads electricity Ya ﹑ sensitive volumes Hou Du ﹑ series resistances etc.
Multiple parameters, it is difficult to compromise；And transversary collects the raw carrier of irradiation as a result of differential gap, Schottky contact electrode with
Spacing between N-type Ohm contact electrode determines by minority diffusion length, therefore can be by properly increasing I areas N-type SiC extensions
The method of the doping concentration of layer improves open-circuit voltage, reduces series resistance, and make the design of device more flexible.Also may be used simultaneously
Tolerance limit is irradiated with effective lifting, this is for, of the present invention battery use more great using the isotope battery meaning of αsource
Lateral device structure, due to the influence without substrate, is readily available the series resistance lower than vertical structure, is filled out so as to improve
The factor is filled, while the volume of battery can be reduced with organic semiconductor device, packaging density is improved, is conducive to the minisize nuclear battery integrated
Into MEMS micro-systems, to Schottky contact electrode metal layer thickness unlike vertical structure is so sensitive, it is easy to technologic reality
It is existing.The manufacture method of the present invention, technique is simple, realizes that convenient and cost is low, the battery of acquisition is practical, application value
It is high.
In summary, the present invention is novel in design rationally, and it is convenient to realize, is conducive to improving the isotope electricity using αsource
The energy conversion efficiency and packaging density in pond, are conducive to integrated, practical, application value height.
Described above is only that the specific explanations of the present invention are illustrated, not the present invention is imposed any restrictions, every according to this
Any simple modification, change and equivalent structure change that inventive technique is substantially made to above example, still fall within this hair
In the protection domain of bright technical scheme.
Claims (6)
1. a kind of silicon carbide Schottky junction isotope battery of use αsource, it is characterised in that including by SiC substrate structure
Into substrate (1), substrate (1) top is provided with N-type SiC epitaxial layer (2), and the N-type SiC epitaxial layer (2) is provided with several
Groove is provided between step, adjacent step, the crown center position of several steps, which is injected, is formed with SiC ohm of N-type
Contact doping area (3), N-type SiC ohmic contact doped region (3) upper end at the top of step with flushing, N-type SiC ohmic contact doped region
(3) upper end is provided with N-type Ohm contact electrode (5), the shape of the N-type Ohm contact electrode (5) with described N-type SiC ohm
Contact doping area (3) shape is identical, and αsource is provided with the step tip position of N-type Ohm contact electrode (5) both sides
(6)；Channel bottom between the adjacent step is provided with Schottky contact electrode (4), the N-type SiC epitaxial layer (2)
Shoulder height is 5 μm~15 μm, and step width is 10 μm~20 μm, and the spacing between step is 2 μm~5 μm, the Schottky
The width for contacting electrode (4) is identical with step spacing.
2. a kind of silicon carbide Schottky junction isotope battery of use αsource according to claim 1, its feature exists
In the integral thickness of the N-type SiC epitaxial layer (2) is 10 μm~30 μm.
3. a kind of silicon carbide Schottky junction isotope battery of use αsource according to claim 1, its feature exists
In the Schottky contact electrode (4) includes the first layer electrode and second layer electrode set gradually from below to up, described first
Layer electrode is Ni layers, Ti layers or Pt layers, and the thickness of first layer electrode is 50nm~100nm, and the second layer electrode is Al layers, thick
Spend for 1000nm~2000nm.
4. a kind of silicon carbide Schottky junction isotope battery of use αsource according to claim 1, its feature exists
In the width of the N-type SiC ohmic contact doped region (3) and the N-type Ohm contact electrode (5) is 0.5 μm~2 μm.
5. a kind of silicon carbide Schottky junction isotope battery of use αsource according to claim 4, its feature exists
In the N-type Ohm contact electrode (5) includes the Ni layers set gradually from below to up and Pt layers, and described Ni layers thickness is
200nm~400nm, described Pt layers thickness is 50nm~200nm.
6. it is a kind of as described in claim any one of 1-5 using αsource silicon carbide Schottky junction isotope battery system
Make method, it is characterised in that comprise the following steps：
Substrate (1) is constituted by SiC substrate Step 1: providing；
Step 2: using chemical vapour deposition technique in the upper surface Epitaxial growth doping concentration of substrate (1) for 1 × 1016cm-3~
5×1017cm-3, thickness be 10 μm~30 μm of N-type SiC epitaxial layer (2)；
Step 3: passing through SF6Gas, uses reactive ion dry etching method to etch height in N-type SiC epitaxial layer (2) for 5 μ
M~15 μm, width is 10 μm~20 μm, and spacing is to set groove between 2 μm~5 μm several steps, adjacent step；
Step 4: using ion implantation in the upper formation doping concentration of N-type SiC epitaxial layer (2) for 1 × 1018cm-3~1 ×
1019cm-3N-type SiC ohmic contact doped region (3)；
Step 5: the thickness for depositing Ni layers and Pt layers, Ni layers successively above N-type SiC ohmic contact doped region (3) is 200nm
~400nm, Pt layers of thickness is 50nm~200nm；
Step 6: in N2Enter the thermal annealing that trip temperature is 950 DEG C~1050 DEG C under atmosphere, in N-type SiC ohmic contact doped region (3)
Top form the N-type Ohm contact electrodes (5) being made up of Ni layer and Pt layers；
Step 7: the channel bottom between the step of N-type SiC epitaxial layer (2) sputters first layer electrode and second layer electrode successively,
The Schottky contact electrode (4) being made up of first layer electrode and second layer electrode is formed, first layer electrode is Ni layers, Ti layers or Pt
Layer, thickness is 50nm~100nm, and second layer electrode is Al layers, and thickness is 1000nm~2000nm；
Step 8: removing the N-type Ohm contact electrode (5) at the two ends at the top of step, only retain the N-type Ohm contact electrode of centre
(5) region for, and at the top of step removing N-type Ohm contact electrode (5) sets αsource (6), that is, obtains using αsource
Silicon carbide Schottky junction isotope battery.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5396141A (en) * | 1993-07-30 | 1995-03-07 | Texas Instruments Incorporated | Radioisotope power cells |
| CN103021492A (en) * | 2012-12-27 | 2013-04-03 | 长安大学 | Silicon carbide transverse-pin penny-sized nuclear battery and manufacturing method thereof |
| CN104051050A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Parallel type PIN type alpha irradiation battery and preparing method thereof |
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| US6949865B2 (en) * | 2003-01-31 | 2005-09-27 | Betabatt, Inc. | Apparatus and method for generating electrical current from the nuclear decay process of a radioactive material |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5396141A (en) * | 1993-07-30 | 1995-03-07 | Texas Instruments Incorporated | Radioisotope power cells |
| CN103021492A (en) * | 2012-12-27 | 2013-04-03 | 长安大学 | Silicon carbide transverse-pin penny-sized nuclear battery and manufacturing method thereof |
| CN104051050A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Parallel type PIN type alpha irradiation battery and preparing method thereof |
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