CN105445380A - Asymmetrical dual-wafer set ultrasonic wave probe applicable to large complex structure damage detection and operation method thereof - Google Patents
Asymmetrical dual-wafer set ultrasonic wave probe applicable to large complex structure damage detection and operation method thereof Download PDFInfo
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- CN105445380A CN105445380A CN201510815585.7A CN201510815585A CN105445380A CN 105445380 A CN105445380 A CN 105445380A CN 201510815585 A CN201510815585 A CN 201510815585A CN 105445380 A CN105445380 A CN 105445380A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/048—Marking the faulty objects
Abstract
The invention discloses an asymmetrical dual-wafer set ultrasonic wave probe applicable to large complex structure damage detection. The asymmetrical dual-wafer set ultrasonic wave probe applicable to large complex structure damage detection comprises a shell, generation blocks, a transmitting wafer, receiving wafers, receiving blocks, sound insulation layers, a sound absorption material, a lead-in conductor and lead-out conductors, wherein the generation blocks and the receiving blocks are arranged asymmetrically; the upper surfaces of the generation blocks and the receiving blocks are oblique at a certain angle, and the oblique angles of the upper surfaces of the generation block and the upper surfaces of the receiving blocks are unequal; the transmitting wafer is an integral piece and is positioned on the generation blocks; the receiving blocks comprise a first receiving block, a second receiving block and a third receiving block; the receiving wafers comprise a first receiving wafer, a second receiving wafer and a third receiving wafer; the lead-in conductor is connected with the transmitting wafer so as to lead in an exciting signal; the lead-out conductors are three, and are respectively connected with the first receiving wafer, the second receiving wafer and the third receiving wafer so as to lead out three independent electric signals; the generation blocks and the receiving blocks, and the adjacent two receiving blocks are both insulated by the sound insulation layers.
Description
Technical field:
The present invention relates to the ultrasonic detection technology of material structure inherent vice or damage, be specifically related to a kind of the asymmetric double wafer set ultrasonic probe and the method for work thereof that are applicable to large and complex structure damage check, left-right asymmetry structure can be adapted to better, while the higher defect damage positioning precision of maintenance, expand single detect (repetition) region, improve detection efficiency, belong to material structure defect damage detection technique field.
Background technology:
Along with the development of structural design manufacturing technology, large and complex structure is widely used in fields such as wind-power electricity generation, Aero-Space, communications and transportation, construction works because of performance specific to it.The large scale structure scale of construction is comparatively large, may occur that the region of defect or formation damage is more, and these may occur that regions of defect or formation damage all obtain detection is fully the prerequisite that structural safety is on active service.Due to the needs of structure function, a lot of body structure surface is non-symmetroid, as plane wing surfaces and blade of wind-driven generator surface etc. non-symmetrical features clearly.
Ultrasound examination is the important means ensureing that structural safety is reliably on active service.Ultrasonic probe is the critical component of detection system, has conclusive impact to Detection job.Ultrasonic probe kind is a lot, and wherein double crystal probe is a kind of important probe, has blind area little, highly sensitive, the features such as resolving power is strong.The wafer and the entrant sound voussoir thereof that realize ultrasound wave transmitting and receiving function in existing double crystal probe are respectively symmetrical structure, form a symmetrical rhombus in by geodesic structure and can examine region, and defect in this region or damage can produce stronger ultrasonic echo.
Double crystal probe Detection results is better, also in Non-Destructive Testing practice, obtains wider application.But existing double crystal probe symmetrical structure form has adverse effect to its application.Symmetrical expression double crystal probe has good adaptability for flat surface, also can be applicable to the curved-surface structure of lateral symmetry, but be applied to laterally asymmetrical curved-surface structure time probe and body structure surface can not good engagement, affect ultrasonic propagation; The vertical definition of defect or damage and detection efficiency are conflicts, consider that the requirement of the vertical definition of defect or damage limits the length of wafer, cause single surveyed area less, have impact on detection efficiency.
Summary of the invention:
The invention provides a kind of the asymmetric double wafer set ultrasonic probe and the method for work thereof that are applicable to large and complex structure damage check, go for the labyrinth (as wing, blade etc.) with asymmetric curvature surface, it is larger that single detects overlay area, detection efficiency is higher, can meet the needs of large and complex structure defect and damage check preferably.
The present invention adopts following technical scheme: a kind of asymmetric double wafer set ultrasonic probe being applicable to large and complex structure damage check, comprises housing and be arranged in the generation block of housing, launch wafer, receive wafer, receive block, sound insulating layer, acoustic absorbant, lead-in conductor and extraction wire, described generation block and the asymmetric setting of reception block, there is block and upper surface at an angle skewed receiving block, and the angle that the upper surface that block and reception block occur tilts is unequal, described transmitting wafer is a slice of monolithic and it is positioned at and occurs on block, and described reception block includes the first reception block, second receives block, 3rd receives block, and described reception wafer includes and lays respectively at the first reception block successively, second receives block, 3rd receives first on block receives wafer, second receives wafer, 3rd receives wafer, and described lead-in conductor is connected to introduce pumping signal with transmitting wafer, and described extraction wire includes altogether and receives wafer with first respectively, second receives wafer, 3rd receives wafer be connected three to draw three independently electric signal, at generation block and receive between block, all separate with sound insulating layer between two adjacent reception blocks.
Further, above described generation block and reception block, all acoustic absorbant is filled with.
Further, the width of described transmitting wafer is greater than the width that the first reception wafer, second receives wafer, the 3rd reception wafer.
The present invention also adopts following technical scheme: a kind of method of work of the asymmetric double wafer set ultrasonic probe for large and complex structure damage check, it comprises the steps:
Step (1), determines to launch wafer according to the profile transverse features of object to be detected and region to be checked and the angle of inclination of the generation block 5 that receives corresponding to wafer and the upper surface that receives block 7;
Step (2), determines the length of each reception wafer according to the longitudinal characteristic sum region to be checked of the profile of object to be detected;
Step (3), selects suitable probe according to step (1) and step (2);
Step (4), clears up detected region surface;
Step (5), connects probe and defectoscope;
Step (6), requires to detect according to characterization processes.
The present invention has following beneficial effect:
(1) the present invention can the curved surface of commensurate structure preferably, be formed with the ultrasonic field being beneficial to and producing defect damage echo in the structure, improve the sensitivity of defect or damage check, improve the horizontal and vertical positioning precision of defect or damage check, there is higher detection efficiency;
(2) compared with symmetrical expression twin lamella ultrasonic probe, hyperacoustic entrant sound voussoir is transmitted and received asymmetric in the present invention, complex-curved structure can be adapted to better, form wider surveyed area in the structure, reduce the spatial variations rate of detection sensitivity, improve the sensitivity of non-core district defect or damage check;
(3) compared with symmetrical expression twin lamella ultrasonic probe, transmit and receive hyperacoustic wafer width asymmetric in the present invention, wider transmitting wafer is conducive to forming more uniform ultrasonic field in by geodesic structure, is conducive to defect or damage formation echo; Narrower reception wafer contributes to the located lateral precision improving defect or damage;
(4) compared with symmetrical expression twin lamella ultrasonic probe, hyperacoustic chip architecture form is transmitted and received asymmetric in the present invention, wherein launch the wafer that wafer adopts a piece longer, pumping signal is introduced by a wire, receive wafer to be made up of one group of shorter wafer, the total length of this group wafer is suitable with transmitting wafer, the electric signal that every block wafer produces is by separate conductors transmission, this chip architecture can improve detection efficiency under the condition of longitudinal register precision ensureing defect or damage, meets the testing requirement of large scale structure better.
Accompanying drawing illustrates:
Fig. 1 is the schematic diagram that the present invention is applicable to the asymmetric double wafer set ultrasonic probe of large and complex structure damage check.
Fig. 2 is the schematic diagram of transmitting and receiving unit.
Wherein:
1-housing; 2-acoustic absorbant; 3-launches wafer; 4-sound insulating layer; There is block in 5-; 6-receives wafer; 6-1-first receives wafer; 6-2-second receives wafer; 6-3-the 3rd receives wafer; 7-receives block; 7-1-first receives block; 7-2-second receives block; 7-3-the 3rd receives block; 8-lead-in conductor; 9-draws wire; A-detects a flaw district.
Embodiment:
Please refer to shown in Fig. 1 and Fig. 2, the asymmetric double wafer set ultrasonic probe that the present invention is applicable to large and complex structure damage check comprises housing 1 and is arranged in the generation block 5 of housing 1, transmitting wafer 3, reception wafer 6, reception block 7, sound insulating layer 4, acoustic absorbant 2, lead-in conductor 8 and draws wire 9.Block 5 occurs and receives the asymmetric setting of block 7, block 5 and the upper surface receiving block 7 at an angle skewed occurs, and it is unequal that the angle that block 5 and the upper surface receiving block 7 tilt occurs.Launch a slice in monolithic of wafer 3 and it is positioned at and occurs on block 5.Reception block 7 includes the first reception block 7-1, the second reception block 7-2, the 3rd receives block 7-3, and reception wafer includes the first reception wafer 6-1, second laid respectively at successively on the first reception block 7-1, the second reception block 7-2, the 3rd reception block 7-3 and receives wafer 6-2, the 3rd reception wafer 6-3.Lead-in conductor 8 is connected with transmitting wafer 3 and then introduces pumping signal, and extraction wire 9 includes three of receiving that wafer 6-1, second receives that wafer 6-2, the 3rd receives that wafer 6-3 is connected respectively with first altogether and then draws three independently electric signal.There is block 5 and receiving between block 7, adjacent two and receives between block 7 and all separate with sound insulating layer 4, occurring all to be filled with acoustic absorbant 2 above block 5 and reception block 7.
The present invention is applicable to the method for work of the asymmetric double wafer set ultrasonic probe of large and complex structure damage check, comprises the steps:
Step (1), determines to launch wafer according to the profile transverse features of object to be detected and region to be checked and the angle of inclination of the generation block 5 that receives corresponding to wafer and the upper surface that receives block 7;
Step (2), determines the length of each reception wafer according to the longitudinal characteristic sum region to be checked of the profile of object to be detected;
Step (3), selects suitable probe according to step (1) and step (2);
Step (4), clears up detected region surface;
Step (5), connects probe and defectoscope;
Step (6), requires to detect according to characterization processes.
The present invention is applicable to the asymmetric double wafer set ultrasonic probe of large and complex structure damage check can the change of commensurate structure surface configuration preferably, form stronger detected sound field in the structure, positioning precision for defect damage is higher, it is larger that single detects the region covered, detection efficiency is higher, meets the requirement that large and complex structure detects well.
The above is only the preferred embodiment of the present invention, it should be pointed out that for those skilled in the art, can also make some improvement under the premise without departing from the principles of the invention, and these improvement also should be considered as protection scope of the present invention.
Claims (4)
1. one kind is applicable to the asymmetric double wafer set ultrasonic probe of large and complex structure damage check, it is characterized in that: comprise housing (1) and be arranged in the generation block (5) of housing (1), launch wafer (3), receive wafer (6), receive block (7), sound insulating layer (4), acoustic absorbant (2), lead-in conductor (8) and extraction wire (9), described generation block (5) and reception block (7) asymmetric setting, there is block (5) and upper surface at an angle skewed receiving block (7), and the angle that the upper surface that block (5) and reception block (7) occur tilts is unequal, a slice in monolithic of described transmitting wafer (3) and its be positioned at and occur on block (5), described reception block (7) includes the first reception block (7-1), second receives block (7-2), 3rd receives block (7-3), described reception wafer includes and lays respectively at the first reception block (7-1) successively, second receives block (7-2), 3rd receives first on block (7-3) receives wafer (6-1), second receives wafer (6-2), 3rd receives wafer (6-3), described lead-in conductor (8) is connected to introduce pumping signal with transmitting wafer (3), described extraction wire (9) includes altogether and receives wafer (6-1) with first respectively, second receives wafer (6-2), 3rd receives wafer (6-3) be connected three to draw three independently electric signal, between generation block (5) and reception block (7), all use sound insulating layer (4) separately between two adjacent receptions block (7).
2. be applicable to the asymmetric double wafer set ultrasonic probe of large and complex structure damage check as claimed in claim 1, it is characterized in that: be all filled with acoustic absorbant (2) in the top of described generation block (5) and reception block (7).
3. be applicable to the asymmetric double wafer set ultrasonic probe of large and complex structure damage check as claimed in claim 1, it is characterized in that: the width of described transmitting wafer (3) is greater than the first reception wafer (6-1), second and receives the width that wafer (6-2), the 3rd receives wafer (6-3).
4., for a method of work for the asymmetric double wafer set ultrasonic probe of large and complex structure damage check, it is characterized in that: comprise the steps
Step (1), determines the angle of inclination of the upper surface launching wafer and the generation block (5) received corresponding to wafer and reception block (7) according to the profile transverse features of object to be detected and region to be checked;
Step (2), determines the length of each reception wafer according to the longitudinal characteristic sum region to be checked of the profile of object to be detected;
Step (3), selects suitable probe according to step (1) and step (2);
Step (4), clears up detected region surface;
Step (5), connects probe and defectoscope;
Step (6), requires to detect according to characterization processes.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510815585.7A CN105445380A (en) | 2015-11-23 | 2015-11-23 | Asymmetrical dual-wafer set ultrasonic wave probe applicable to large complex structure damage detection and operation method thereof |
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| CN201510815585.7A CN105445380A (en) | 2015-11-23 | 2015-11-23 | Asymmetrical dual-wafer set ultrasonic wave probe applicable to large complex structure damage detection and operation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107976485A (en) * | 2016-10-25 | 2018-05-01 | 费希尔控制产品国际有限公司 | acoustic emission sensor with integrated acoustic generator |
| CN110824008A (en) * | 2019-11-19 | 2020-02-21 | 中广核检测技术有限公司 | Ultrasonic detection probe and method for cotter pin fastener |
| CN113176340A (en) * | 2021-04-28 | 2021-07-27 | 国能锅炉压力容器检验有限公司 | Ultrasonic guided wave detection method for coating bonding strength |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107976485A (en) * | 2016-10-25 | 2018-05-01 | 费希尔控制产品国际有限公司 | acoustic emission sensor with integrated acoustic generator |
| CN110824008A (en) * | 2019-11-19 | 2020-02-21 | 中广核检测技术有限公司 | Ultrasonic detection probe and method for cotter pin fastener |
| CN110824008B (en) * | 2019-11-19 | 2022-05-24 | 中广核检测技术有限公司 | Ultrasonic detection probe and detection method for control rod guide cylinder cotter pin |
| CN113176340A (en) * | 2021-04-28 | 2021-07-27 | 国能锅炉压力容器检验有限公司 | Ultrasonic guided wave detection method for coating bonding strength |
| CN113176340B (en) * | 2021-04-28 | 2022-11-08 | 国能锅炉压力容器检验有限公司 | Ultrasonic guided wave detection method for coating bonding strength |
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Application publication date: 20160330 |
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