CN105441909B - A kind of system and method for detecting temperature and the MOCVD device equipped with the system - Google Patents
A kind of system and method for detecting temperature and the MOCVD device equipped with the system Download PDFInfo
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- CN105441909B CN105441909B CN201410323157.8A CN201410323157A CN105441909B CN 105441909 B CN105441909 B CN 105441909B CN 201410323157 A CN201410323157 A CN 201410323157A CN 105441909 B CN105441909 B CN 105441909B
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Abstract
The invention discloses a kind of system and method for detecting temperature and MOCVD devices equipped with the system, the temperature-sensing system includes a generating device of laser and an Electro-Optical Sensor Set, the Electro-Optical Sensor Set connects a calculation control unit, the present invention emits laser using the generating device of laser, it improves and is incident on the incident intensity on substrate and substrate stage surface in reaction chamber, according to the principle of reflection of light, the laser intensity for being reflected into Electro-Optical Sensor Set improves, Electro-Optical Sensor Set is enabled to detect sufficiently strong intensity of reflected light, to realize that the reflectivity to substrate or substrate stage calculates, avoid intensity of reflected light it is too low or detection cause that substrate or substrate stage reflectivity can not be calculated less than intensity of reflected light, and then substrate and substrate bearing disk temperature can not be calculated.
Description
Technical field
The present invention relates to manufacture technical field of semiconductor device more particularly to one kind outside the Growns such as substrate
Prolong layer or measured in chemical vapor deposition unit the technical field of temperature.
Background technology
In manufacture of semiconductor, various processing procedures rely heavily on the temperature of substrate.Therefore, the temperature of substrate is controlled
It is a very important ring in manufacture of semiconductor, and since substrate has certain size, the temperature of substrate can be carried out uniform
Control is even more vital.
Substrate temperature control is particularly important for metal organic chemical vapor deposition (MOCVD) reactor.MOCVD is metal
The english abbreviation of organic compound chemical vapor deposition (Metal-organic Chemical Vapor Deposition).
MOCVD is a kind of novel vapour phase epitaxy growing technology to grow up on the basis of vapor phase epitaxial growth (VPE).It is with III
Race, the organic compound of II race's element and V, VI race's element hydride etc. be used as crystal growth source material, with pyrolysis
Mode carries out vapour phase epitaxy on substrate, grows various III-V races, group Ⅱ-Ⅵ compound semiconductor and their polynary solid solution
The thin layer monocrystal material of body.
It needs to be monitored multiple parameters, such as substrate temperature, pressure, gas flow rate etc. during MOCVD processing procedures
And control, to reach ideal crystal epitaxy.The control of wherein substrate temperature is even more important, substrate temperature it is continual and steady
Property and accuracy directly affect processing procedure effect.More substrate, the mounting table are usually provided on the substrate stage of MOCVD
Can quickly rotate, and cooperate with the gas spray of side on the chamber, for batch processing procedure provide one it is uniform quickly
Processing procedure platform, setting heating unit below the substrate stage, the heat that the heating unit provides passes through the substrate
Mounting table is transmitted to substrate, realizes the temperature control to substrate.Due to being deposited between the temperature of substrate stage and the temperature of substrate
It is being closely connected, it is therefore desirable to while temperature to substrate stage and the temperature of substrate carry out detection monitoring.However existing skill
For art when carrying out temperature survey to substrate and substrate stage, substrate stage is usually graphite material, smooth different from substrate
The mirror-reflection that plane generates, due to graphite mounting table rough surface, when incident light projects substrate stage surface, can send out
Raw diffusing reflection, reflected light are dissipated to all directions, and the reflection laser intensity of Electro-Optical Sensor Set detection is weaker or is difficult to detect, and makes
Emissivity into substrate stage is difficult to calculate, final so that the temperature sensing on substrate stage surface is difficult to realize.
Description
To solve problem of the prior art, the invention discloses a kind of MOCVD device equipped with temperature-sensing system, including
One reaction chamber, the reaction chamber is interior to set a substrate stage, carries several substrates on the substrate stage, feature exists
In：The MOCVD device further includes a temperature-sensing system, and the temperature-sensing system includes a generating device of laser and a light
Electric detection device, the Electro-Optical Sensor Set connect a calculation control unit, and the generating device of laser is certain strong for emitting
Emit in the incident laser of degree to the reaction chamber and in the substrate or substrate stage surface；The photodetection dress
Put the heat radiation power for detecting reflection laser intensity and the substrate and the substrate stage, the calculation control unit
For calculating the emissivity of the substrate and the substrate stage according to reflection laser intensity and incident laser intensity, and combine
The thermal radiation power meter calculation detected obtains the temperature of substrate and substrate stage.
Preferably, the reaction chamber is included at the top of a reaction chamber, one observation port of setting, the temperature at the top of the reaction chamber
Detection system is set to above the observation port.
Preferably, the temperature-sensing system include collimator, the collimator be located at the generating device of laser and
Between the observation port.
Preferably, it is a disc at the top of the reaction chamber, the observation port is along at the top of the disc reaction chamber
The strip of radial direction extension.
Preferably, the MOCVD device includes at least two temperature-sensing systems, and the temperature-sensing system is set to institute
It states above observation port and arranges along the observation port direction.
Preferably, two or more described observation ports, each observation port top are set at the top of the reaction chamber
One temperature-sensing system is set, and the distance of each observation port to the reaction chamber top center is different.
Preferably, the generating device of laser is laser generator or optical fiber-coupled laser generator.
Preferably, the generating device of laser output terminal connects a high frequency modulated output device.
Further, the invention also discloses a kind of system for detecting substrate and substrate stage temperature, including a laser
Generating means, collimator and an Electro-Optical Sensor Set, the Electro-Optical Sensor Set connect a calculation control unit, the laser
The laser of generating means transmitting projects the concurrent hair tonic of the substrate or substrate stage surface through the collimator and penetrates；The light
Electric detection device is used to detect the heat radiation power of reflection laser intensity and the substrate and the substrate stage, the calculating
Control unit is used to calculate the transmitting of the substrate and the substrate stage according to reflection laser intensity and incident laser intensity
Rate, and the temperature of substrate and substrate stage is calculated.
Preferably, the generating device of laser is laser generator or optical fiber-coupled laser generator.
Preferably, the generating device of laser output terminal connects a high frequency modulated output device.
Further, the invention also discloses a kind of method of substrate and substrate stage temperature in detecting MOCVD equipment,
The MOCVD device includes a reaction chamber, and a substrate stage is set in the reaction chamber, if being carried on the substrate stage
Butt piece, the method includes the following steps：One temperature-sensing system is set above the substrate stage, and the temperature is visited
Examining system includes a generating device of laser, an Electro-Optical Sensor Set, a calculating control list being connect with the Electro-Optical Sensor Set
Member, the generating device of laser emit incident laser, and the incident laser is coupled to through collimator in the MOCVD device
Substrate and substrate stage surface, and reflected in the substrate and the substrate stage surface；The photodetection dress
It puts and detects the reflection laser intensity and the heat radiation power of the substrate and the substrate stage, the calculation control unit
The emissivity of the substrate and the substrate stage is calculated according to reflection laser intensity and incident laser intensity, and according to described
The thermal radiation power meter calculation of the substrate and the substrate stage that Electro-Optical Sensor Set detects show that substrate and substrate carry
Put the temperature of platform.
Preferably, the generating device of laser connects a high frequency modulated output device, and the high frequency modulated output device is used
In reduction laser speckle noise.
Preferably, one heating system of setting, the calculation control unit control the heating below the substrate stage
The temperature of system.
The present invention emits laser into reaction chamber by using a generating device of laser, improves and is incident on base in reaction chamber
Piece and the incident intensity on substrate stage surface, according to the principle of reflection of light, the laser for being reflected into Electro-Optical Sensor Set is strong
Degree improves so that Electro-Optical Sensor Set can detect sufficiently strong intensity of reflected light, to realize to substrate or substrate stage
Reflectivity calculate, avoid intensity of reflected light it is too low or detection less than intensity of reflected light to calculate substrate or substrate stage it is anti-
Penetrate the influence of rate.
Description of the drawings
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other feature of the invention,
Objects and advantages will become more apparent upon, and drawings described below constitutes the part of this specification, list together with the description not
Same embodiment, to explain and illustrate spirit of the invention.The following drawings does not depict all technologies of specific embodiment
Feature does not depict the actual size and actual proportions of component yet.
Fig. 1 shows MOCVD device structure diagram of the present invention；
Fig. 2 shows the index paths of temperature-sensing system of the present invention detection substrate surface temperature；
Fig. 3 shows the index path of temperature-sensing system detection substrate stage surface temperature of the present invention；
Fig. 4 shows the index path of the temperature-sensing system detection substrate surface temperature of another embodiment of the present invention；
Fig. 5 shows the index path of the temperature-sensing system detection substrate stage surface temperature of another embodiment of the present invention；
Fig. 6 shows that incident laser inclination of the present invention projects the index path on the substrate stage surface；
Fig. 7 shows the light of temperature-sensing system detection substrate stage surface temperature of the present invention with high frequency modulated output
Lu Tu.
Specific embodiment
In order to which technical characteristic disclosed by the invention is discussed in detail, the specific embodiment of the application is done below in conjunction with the accompanying drawings
Go out to be described in detail.
Fig. 1 shows MOCVD device structure diagram of the present invention, wherein, MOCVD device includes a reaction chamber 100,
At least one substrate stage 120 of setting and the shaft 125 for being used to support the substrate stage 120 in reaction chamber 100.Its
In, shaft 125 can under the driving of other power plant (not shown) according to such as 500~1000 revs/min rotating speed at a high speed
Rotation so that the substrate stage 120 also can under the drive of the shaft 125 high speed rotation, that is, with shown in FIG. 1 perpendicular
Axis p shown in straight dotted line is rotated for axis.It placed several substrates 130 by processing on the upper surface of substrate stage 120,
Wherein, to place substrate 130, several are additionally provided on the upper surface of substrate stage 120 for placing processed substrate
130 slot or hollow hole (not shown).Heating unit 140 is additionally provided in reaction chamber chamber 100, is used to load the substrate
Platform 120 is heated to the temperature needed for manufacturing process.Substrate 130 includes substrate and one or more layers film disposed thereon.Scheming
Show in shown embodiment, substrate 130 has been epitaxially grown one illustratively using sapphire as substrate in MOCVD processing procedures
Layer or plural layers and become substrate and add membrane structure.
In the appropriate location of reaction chamber chamber 100, for example, at the top of reaction chamber, it is additionally provided with observation port 111.Observation port 111
Top sets a temperature-sensing system 150.Fig. 2 shows the light paths of temperature-sensing system of the present invention detection substrate surface emissivity
Figure, the temperature-sensing system 150 include a generating device of laser 151, an Electro-Optical Sensor Set 152, a prism 153 and one
Collimator 155, the generating device of laser 151 described in the present embodiment are laser generator, and the laser of laser generator transmitting is through rib
Mirror 153 reflects, and it is incoming laser beam 1511 to pass through collimator 155 by the laser convergence of diverging, and incoming laser beam 1511 passes through
Observation port 111 at the top of reaction chamber is projected on substrate 130 and is reflected on 130 surface of substrate, in order to accurately measure substrate
130 reflectivity, incoming laser beam 1511 is vertically projected to substrate after the present embodiment is adjusted using incident laser collimator 155
130 surface, and reflected on 130 surface of substrate；Electro-Optical Sensor Set 152 is used to detect the intensity of reflection laser, photoelectricity
Detection device 152 connects a calculation control unit 160, and calculation control unit 160 detects anti-according to Electro-Optical Sensor Set 152
The substrate reflection rate R occurred at transmitting can be calculated, and according to ε by penetrating laser intensity and known incident laser intensity
Substrate emissivity ε is calculated in=1-R.The generating device of laser that the present embodiment uses includes on and off two states, works as laser
When generating means 151 is set to off state, Electro-Optical Sensor Set 152 is for detecting substrate heat radiation power at this time, when laser is sent out
When generating apparatus is set on state, Electro-Optical Sensor Set 152 is used to detect reflection laser intensity and substrate heat radiation power at this time
The sum of, due to reflection laser intensity=incident laser intensity × reflectivity R, R can be calculated.
Due to MOCVD device, substrate stage 120 keeps 500~1000 revs/min of high speed during normal process
Rotation, and its temperature is typically heated to higher than 1000 DEG C, therefore is difficult to be calculated with method measured directly, in general, calculating base
The temperature of piece 130 and substrate stage 120 will be according to Planck equation：
Wherein Pλ,T(Blackbody) it is the outside heat radiation power of black matrix, c1And c2Respectively the first and second radiation constants,
λ is radiation wavelength, and T is the temperature of substrate 130.
Due to Pλ,T(Blackbody) it can not directly measure, in order to obtain the temperature T of substrate 130, according to following equation：
Pλ,T(Emitter)=ε × Pλ,T(Blackbody)
Wherein, Pλ,T(Emitter) the heat radiation power of substrate 130 detected for Electro-Optical Sensor Set, ε are according to light
Electric detection device detects the emissivity of substrate 130 that reflection laser Strength co-mputation obtains, therefore can be counted by above-mentioned formula
Calculate to obtain the outside heat radiation power P of place's substrateλ,T(Blackbody), the temperature of substrate 130 and then according to Planck equation is calculated
Degree.
Fig. 3 shows index path when temperature-sensing system 150 detects substrate stage surface temperature, substrate stage 120
Usually graphite material, different from the mirror-reflection that 130 smooth flat of substrate generates, due to graphite mounting table rough surface, when
When incident light projects substrate stage surface, it may occur that diffusing reflection, reflected light are dissipated to all directions, caused only a small amount of
Reflection luminous energy enters Electro-Optical Sensor Set 152, if Electro-Optical Sensor Set 152 is detected less than reflective light intensity or detected anti-
The intensity for penetrating light is weaker, and rate meter can be caused not calculate accurately really or can not calculate, and substrate mounting also just can not accurately be calculated
The temperature of platform 120.Therefore, temperature-sensing system of the present invention can be solved effectively by using generating device of laser 151
The above problem.It in the present invention, can since generating device of laser 151 can provide incident laser intensity powerful enough
To ensure that Electro-Optical Sensor Set 152 can detect stronger reflection laser intensity, and then the hair of substrate stage is calculated
It penetrates rate and the temperature of the substrate stage at reflection occurs.Generating device of laser provided by the invention, which can both meet measurement, to be had
The substrate emissivity of smooth flat, can also the coarse substrate stage 120 of measurement surface emissivity, substrate stage 120
Temperature survey principle be same as the temperature survey principle of substrate 130 described in Fig. 2, herein, substrate stage is as to external radiation
Black matrix, according to formula：Pλ,T(Emitter)=ε × Pλ,T(Blackbody)
Wherein, Pλ,T(Emitter) the heat radiation power of substrate stage 120 detected for Electro-Optical Sensor Set, ε are
The emissivity of substrate stage 120 that reflection laser Strength co-mputation obtains is detected, therefore by upper according to Electro-Optical Sensor Set
120 outside heat radiation power P of place's substrate stage can be calculated to obtain by stating formulaλ,T(Blackbody), and then according to Planck side
The temperature of 120 measured place of substrate stage is calculated in journey.
Temperature-sensing system 150 is generally arranged at reaction chamber over top, due to generating device of laser 151 and photodetection
152 volume of device is larger, in order to reduce the whole volume of temperature-sensing system 150, ensures that MOCVD device structure is simplified, can be with
Generating device of laser 151 and Electro-Optical Sensor Set 152 are arranged on remote position, as shown in Figure 4 and Figure 5, laser fills
151 are put as optical fiber-coupled laser generator, output terminal connection optical fiber 156, the incidence that optical fiber-coupled laser generator is sent out swashs
Light by optical fiber 156 enter prism 153, and collimator 155 adjustment formed substantially parallel light project substrate 130 or
120 surface of substrate stage, laser after reflection enter through optical fiber 157 in the Electro-Optical Sensor Set 152 being attached thereto, and through with
The temperature of substrate 130 and substrate stage 120 is calculated in the calculation control unit 160 that the Electro-Optical Sensor Set 152 connects.
It can be maximally reduced by using Fig. 4 Fig. 5 the embodiment described and be placed on reaction chamber head temperature detection system 150
Area, since very little being lost when light is conducted in optical fiber, and the length of optical fiber need not be too long in the present embodiment, therefore completely not
The intensity of incident laser can be impacted, can ensure the accuracy and validity of temperature-sensing system.
The embodiment of Fig. 2-Fig. 5 descriptions is all that incoming laser beam impinges perpendicularly on substrate or substrate stage surface, another
In outer embodiment, embodiment as shown in Figure 6, after the incident light collimator 155a adjustment that generating device of laser 151 is sent out
120 surface of substrate 130 or substrate stage, after reflecting, reflection laser and substrate are projected across the inclination of observation panel 111
130 or 120 surface of substrate stage also in a fixed inclination, and enter Electro-Optical Sensor Set 152 by collimator 155b, using this
Light path described in embodiment, it is ensured that the efficiency of transmission of light is larger, and Electro-Optical Sensor Set 152 can receive more multiple reflection and swash
Light realizes the accurate calculating to substrate or substrate stage.
Due to generally including several substrates in MOCVD reaction chambers, and the area of substrate stage is larger, in order to ensure base
Piece and the comprehensive and accuracy of substrate stage temperature survey can set two or more in reaction chamber over top
Temperature-sensing system 150, at this point, in order to ensure that the incident laser of two and above generating device of laser can project reaction
Intracavitary can set two or more described observation ports at the top of reaction chamber, one temperature of setting above each observation port
Detection system is spent, the distance of each observation port to reaction chamber top center is different, it is ensured that described in when substrate stage rotates
Temperature-sensing system can measure the emissivity of different location；In a further embodiment, at the top of due to usually described reaction chamber
For a disc, it is the strip extended along 110 radial directions at the top of the reaction chamber that can also set observation port 111, described
Temperature-sensing system is set to above the observation port and arranges along the radial direction at the top of the reaction chamber.
According to Fig. 1, shaft 125 can be under the driving of other power plant (not shown) according to such as 500~1000
Rev/min rotating speed high speed rotation so that the substrate stage 120 also can under the drive of the shaft 125 high speed rotation, no
Temperature-sensing system with region can be realized by constantly emitting incident laser to substrates of different and substrate stage to more
The scan-type thermometric of piece substrate and entire substrate stage.Two or more temperature-sensing systems are set above reaction chamber
When, observation port 111 can set with 150 corresponding number of temperature-sensing system, strip is may be set to be, to meet several temperature
Spend the incident laser of detection system and reflection laser disengaging.Similarly, in the present embodiment in order to reduce the body of temperature-sensing system
Product, generating device of laser 151 can also use optical fiber-coupled laser generator, the incident light of optical fiber-coupled laser generator transmitting
The reflected light received with Electro-Optical Sensor Set 152 is transmitted by optical fiber.Temperature-sensing system can be arranged directly on reaction
Top of chamber can also be arranged on reaction chamber over top certain distance, is designed according to differential responses cavity configuration.
The heating unit 140 of 120 lower section of the connection control of calculation control unit 160 substrate stage, according to the substrate measured
130 and substrate stage 120 temperature adjust heating unit 140 the efficiency of heating surface, meet requirement of the processing procedure to substrate temperature.
In practical work process, the laser phase on substrate and substrate stage is projected due to generating device of laser 151
Dry length is larger, can generate speckle pattern on substrate and substrate stage, influence the survey to substrate and substrate stage temperature
Therefore dose-effect fruit, can connect a high frequency modulated device 158, as shown in fig. 7, high frequency in the output terminal of generating device of laser 151
Modulating device 158 can be reduced incident laser and produced in substrate or substrate stage surface by high-frequency modulation Laser emission
Raw speckle pattern, it is ensured that the emissivity measurement of substrate and substrate stage is more accurate.
Although the present invention is disclosed as above with preferred embodiment, it is not for limiting the present invention, any this field skill
Art personnel without departing from the spirit and scope of the present invention, can make possible variation and modification, therefore the guarantor of the present invention
Shield range should be subject to the range that the claims in the present invention are defined.
Claims (14)
1. a kind of MOCVD device equipped with temperature-sensing system, including a reaction chamber, one substrate of setting loads in the reaction chamber
Platform carries several substrates on the substrate stage, it is characterised in that：The MOCVD device further includes a temperature-sensing system,
The temperature-sensing system includes a generating device of laser and an Electro-Optical Sensor Set, and the Electro-Optical Sensor Set connection one calculates
Control unit, the generating device of laser are used in the incident laser to the reaction chamber for emitting some strength and in the substrate
Or substrate stage surface emits；The generating device of laser includes on and off two states, when the laser fills
It installs when being set to off status, the Electro-Optical Sensor Set is for detecting substrate heat radiation power, when the generating device of laser is set
When being set to open state, the Electro-Optical Sensor Set is used to detect the sum of reflection laser intensity and substrate heat radiation power, the meter
Calculate the hair that control unit is used to calculate the substrate and the substrate stage according to reflection laser intensity and incident laser intensity
Rate is penetrated, and combines the temperature that the thermal radiation power meter calculation detected obtains substrate and substrate stage.
2. MOCVD device according to claim 1, which is characterized in that the reaction chamber is included at the top of a reaction chamber, described
One observation port of setting at the top of reaction chamber, the temperature-sensing system are set to above the observation port.
3. MOCVD device according to claim 2, which is characterized in that the temperature-sensing system includes collimator, institute
Collimator is stated between the generating device of laser and the observation port.
4. MOCVD device according to claim 2, which is characterized in that it is a disc at the top of the reaction chamber, the sight
It is the strip extended along the radial direction at the top of the disc reaction chamber to survey mouth.
5. MOCVD device according to claim 4, which is characterized in that the MOCVD device is visited including at least two temperature
Examining system, the temperature-sensing system are set to above the observation port and arrange along the observation port direction.
6. MOCVD device according to claim 2, which is characterized in that at the top of the reaction chamber setting two or two with
The upper observation port, one temperature-sensing system of each observation port top setting, each observation port to the reaction chamber
The distance of top center is different.
7. according to the MOCVD device described in any one of claim 1-6 claims, which is characterized in that the laser occurs
Device is laser generator or optical fiber-coupled laser generator.
8. MOCVD device according to claim 7, it is characterised in that：The generating device of laser output terminal connection one is high
Frequency modulation output device.
9. a kind of system for detecting substrate and substrate stage temperature, it is characterised in that：Including a generating device of laser, a collimation
Device and an Electro-Optical Sensor Set, the Electro-Optical Sensor Set connect a calculation control unit, and the generating device of laser is used to send out
The incident laser of some strength is penetrated through occurring in the collimator a to reaction chamber and in the substrate or substrate stage surface
Transmitting；The generating device of laser includes on and off two states, described when the generating device of laser is set to off state
Electro-Optical Sensor Set is for detecting substrate heat radiation power, when the generating device of laser is set on state, the photoelectricity
For detecting the sum of reflection laser intensity and substrate heat radiation power, the calculation control unit is used for according to reflection detection device
Laser intensity and incident laser intensity calculate the emissivity of the substrate and the substrate stage, and combine the hot spoke detected
Penetrate the temperature that power calculation obtains substrate and substrate stage.
10. system according to claim 9, it is characterised in that：The generating device of laser is laser generator or optical fiber
Coupled laser generator.
11. system according to claim 9, it is characterised in that：The generating device of laser output terminal connects a high frequency modulation
Output device processed.
12. a kind of method of substrate and substrate stage temperature in detecting MOCVD equipment, the MOCVD device includes a reaction
Chamber, the reaction chamber is interior to set a substrate stage, and several substrates are carried on the substrate stage, it is characterised in that：It is described
Method includes the following steps：One temperature-sensing system is set above the substrate stage, and the temperature-sensing system includes
One generating device of laser, an Electro-Optical Sensor Set, a calculation control unit being connect with the Electro-Optical Sensor Set, the laser
Generating means emits incident laser, and the incident laser is coupled to the substrate and substrate stage surface through collimator, and
It is reflected in the substrate and the substrate stage surface；The generating device of laser includes on and off two states, when
When the generating device of laser is set to off state, the Electro-Optical Sensor Set is for detecting substrate heat radiation power, when described
When generating device of laser is set on state, the Electro-Optical Sensor Set is used to detect reflection laser intensity and substrate heat radiation work(
The sum of rate, the calculation control unit calculates the substrate according to reflection laser intensity and incident laser intensity and the substrate carries
Put the emissivity of platform, and the substrate and the heat radiation work(of the substrate stage detected according to the Electro-Optical Sensor Set
The temperature of substrate and substrate stage is calculated in rate.
13. according to the method for claim 12, it is characterised in that：The generating device of laser connects high frequency modulated output
Device, the high frequency modulated output device are used to reduce laser speckle noise.
14. according to the method for claim 12, which is characterized in that one heating system of setting below the substrate stage,
The calculation control unit controls the temperature of the heating system.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410323157.8A CN105441909B (en) | 2014-07-08 | 2014-07-08 | A kind of system and method for detecting temperature and the MOCVD device equipped with the system |
| TW104121564A TW201602534A (en) | 2014-07-08 | 2015-07-02 | System and method for detecting temperature and MOCVD equipment having the system |
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|---|---|---|---|
| CN201410323157.8A CN105441909B (en) | 2014-07-08 | 2014-07-08 | A kind of system and method for detecting temperature and the MOCVD device equipped with the system |
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| CN105441909A CN105441909A (en) | 2016-03-30 |
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| CN105928625B (en) * | 2016-06-20 | 2023-04-07 | 中国工程物理研究院流体物理研究所 | Metal surface dynamic temperature point measuring method based on reflectivity change |
| CN111155073A (en) * | 2019-12-30 | 2020-05-15 | 中国电子科技集团公司第十三研究所 | Temperature calibration method of MOCVD epitaxial equipment |
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| CN102217048A (en) * | 2008-08-29 | 2011-10-12 | 应用材料股份有限公司 | Method and apparatus for extended temperature pyrometry |
| CN102183316A (en) * | 2010-12-10 | 2011-09-14 | 中国科学院安徽光学精密机械研究所 | Real-time temperature monitoring instrument for tunable semiconductor laser absorption spectrum |
| CN103884449A (en) * | 2014-03-04 | 2014-06-25 | 中国空间技术研究院 | Nozzle arc temperature non-contact measurement system based on optical fiber transmission |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201602534A (en) | 2016-01-16 |
| CN105441909A (en) | 2016-03-30 |
| TWI563244B (en) | 2016-12-21 |
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