CN105428493A - GaN-based LED and preparation method thereof - Google Patents
GaN-based LED and preparation method thereof Download PDFInfo
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- CN105428493A CN105428493A CN201610006255.8A CN201610006255A CN105428493A CN 105428493 A CN105428493 A CN 105428493A CN 201610006255 A CN201610006255 A CN 201610006255A CN 105428493 A CN105428493 A CN 105428493A
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- gan base
- base led
- zno film
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000000605 extraction Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 14
- 238000004528 spin coating Methods 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000011247 coating layer Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010276 construction Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a GaN-based LED. A ZnO film is plated on the light emitting surface of a conventional LED, and since the pattern refractive index of ZnO is about 2.0, which ranges from the refractive index of air and the refractive index of GaN, light emitted from an active layer can be emitted more easily. According to the invention, the light extraction efficiency of the LED is substantially improved through simultaneous adoption of surface coarsening and micropore patterns with preparation periodical structural arrangement. The invention also discloses a preparation method of the structure of the GaN-based LED.
Description
Technical field
The present invention relates to semiconductor, Laser Micro-Machining and optical information technology field, specifically one plates layer of ZnO film on light-emitting diode (LED) exiting surface, and the micropore pattern to its surperficial using plasma alligatoring and femtosecond laser manufacturing cycle Structural assignments, to realize the raising of light extraction efficiency of LED.
Background technology
Light-emitting diode (LED) is a kind of New Solid light source, has green, the advantage such as efficient, energy-conservation, is considered to follow-on lighting source.Be widely applied in mobile phone, camera, display, indicator light etc. at present, and also start to show up prominently in auto lamp, LCD backlight and nightscape lighting etc.Along with the globalization quickening of urbanization process and being rooted in the hearts of the people of energy-saving and emission-reduction, the Lighting Industry in future is shown huge development space by LED.At present, the LED on market is mainly based on the LED of GaN material, and worldwide obtain and pay close attention to widely and develop fast, but GaN base LED is also faced with series of problems, wherein sixty-four dollar question how to improve its luminous efficiency further.Along with semiconductor technology progress and structure optimization, the internal quantum efficiency of GaN base LED reaches more than 80%, and external quantum efficiency only has about 20%-30%.Therefore, low-level external quantum efficiency is the major technology bottleneck that high power GaN base LED develops.Improve power output by raising external quantum efficiency and become one of lighting LED key technology.Can find out has not had too large room for promotion on internal quantum efficiency, and the low main cause of external quantum efficiency is that light extraction efficiency of LED is very low, and promoting light extraction efficiency will be the following main path improving LED external quantum efficiency.
The very low reason of light extraction efficiency is caused to be: the refractive index (n of GaN
gaN=2.5) with air (n
air=1) refractive index in is larger, corresponding to critical total internal θ=23 °, the photon produced when active area incides optically thinner medium air from optically denser medium GaN in outgoing process, make the outgoing photon exceeding this angle in interface, total reflection phenomenon to occur and can not escape out, the photon reflected is reduced further by the luminous efficiency that material absorption generation thermal conductance causes LED component again.Therefore how to take effective mode to make this part light escape out, being the starting point improving GaN base LED power output, is also the key point that LED solid-state illumination light source is widely applied.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of method improving GaN base light extraction efficiency of LED, LED exiting surface plates layer of ZnO film, and the micropore pattern of mating surface alligatoring simultaneously and manufacturing cycle Structural assignments realizes significantly improving of light extraction efficiency of LED.Present invention also offers the manufacture method of the micropore pattern of above-mentioned exiting surface surface coarsening and periodic structure arrangement.
For achieving the above object, the invention provides following technical scheme:
A kind of GaN base LED, described LED comprises the sapphire substrates, resilient coating GaN, N-shaped GaN semiconductor layer, MQW active layer, the p-type GaN semiconductor layer that stack successively, be electrically connected to the n-type electrode pad on resilient coating N-shaped GaN, be electrically connected to the p-type electrode pad on p-type GaN semiconductor layer, described LED also comprises ZnO film structure, and described ZnO film is plated on p-type GaN semiconductor layer by spin-coating method.
Preferably, described ZnO film thickness is 10 ~ 15nm.
The preparation method of described GaN base LED, concrete steps are as follows:
1) ZnO film of spin coating layer of transparent on the p-type exiting surface of the GaN base LED prepared;
2) surface of the plasma bombardment ZnO film adopting argon gas and hydrogen to be mixed to form, under the effect of high energy particle, ZnO film surface forms the alligatoring structure of lint shape;
3) the GaN base LED chip after alligatoring is placed on the three-dimensional machinery mobile platform of fs-laser system, the movement of computer control focusing objective len makes laser spot scan on GaN base LED chip light extraction face, the focus energy changing femtosecond laser controls on exiting surface, to form diameter at 1.5 ~ 2 μm, and the degree of depth is at the micropore of 40 ~ 45nm.
Preferably, described step 1) adopt spin coating instrument to carry out spin coating, rotation efficiency is 8000r/s, and rotational time is 50s.
Preferably, described step 2) operating voltage of plasma is for 80-100 volt, the vacuum degree of chamber is 1 × 10 residing for plasma
-3~ 7 × 10
-3handkerchief.
Preferably, step 3) described laser scanning carries out as follows: utilize 20 x Microscope Objectives to focus on the exiting surface of GaN base LED chip by the femtosecond laser that wavelength is 800nm, incident laser energy 5.8 ~ 20.2J/cm
2, pulsewidth 100 ~ 120fs, repetition rate 1kHz.
Preferably, described step 2) volume ratio of argon gas and hydrogen is 3:1.
Beneficial effect of the present invention is: the invention provides a kind of GaN base LED plating layer of ZnO film on LED exiting surface, because the refractive index of ZnO is about 2.0, be between air and GaN refractive index, the easier outgoing of the light that active layer is sent, and the micropore pattern of mating surface alligatoring simultaneously and manufacturing cycle Structural assignments achieves significantly improving of light extraction efficiency of LED.
Accompanying drawing explanation
In order to make object of the present invention, technical scheme and beneficial effect clearly, the invention provides following accompanying drawing:
Fig. 1 represents the artwork of spin coating ZnO film on the p-type exiting surface of the GaN base LED prepared;
Fig. 2 represents the Electronic Speculum figure of the GaN base LED chip through surface coarsening and micropore patterned structures;
Fig. 3 represents the optical output power of common LED and new construction LED and the graph of a relation of Injection Current;
Fig. 4 represents the electroluminescent spectrum figure of common LED and new construction LED.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.The experimental technique of unreceipted actual conditions in embodiment, the usually conveniently conditioned disjunction condition of advising according to manufacturer.
Embodiment 1
1, on the p-type exiting surface of the GaN base LED prepared (as shown in Figure 1a), adopt spin-coating method, the ZnO film (as shown in Figure 1 b) of spin coating layer of transparent, the rotation efficiency of spin coating instrument is 8000r/s, rotational time is the spin coating thickness of 50s, ZnO is 15nm;
2, on the GaN base LED being coated with ZnO film, adopt the plasma that argon gas and hydrogen mixing (argon gas: hydrogen=3:1) are formed, the surface of direct bombardment ZnO film, in the effect of high energy particle, ZnO film surface can form the alligatoring structure (as illustrated in figure 1 c) of lint shape; Adopt the design parameter of plasmon for: produce the operating voltage of plasma for 80-100 volt, the vacuum degree of chamber is 1 × 10 residing for plasma
-3~ 7 × 10
-3handkerchief;
3, the GaN base LED chip after alligatoring is placed on the three-dimensional machinery mobile platform of fs-laser system, the movement of computer control focusing objective len makes laser spot scan on GaN base LED chip light extraction face, design parameter: utilize 20 x Microscope Objectives to focus on the exiting surface of GaN base LED chip by the femtosecond laser that wavelength is 800nm, incident laser energy 20.2J/cm
2, pulsewidth 120fs, repetition rate 1kHz;
4, by changing the focus energy of femtosecond laser, control on exiting surface, to form diameter at 1.5 ~ 2 μm, the degree of depth is at the micropore (as shown in Figure 1 d) of 40 ~ 45nm.
Electron-microscope scanning is carried out to the exiting surface of the GaN base LED chip through surface coarsening and micropore patterned structures, obtains electron-microscope scanning figure as shown in Figure 2.
New construction LED embodiment 1 prepared and common LED carry out optical output power and Injection Current contrasts, obtain graph of a relation as shown in Figure 3, obviously can find out that the power output of new construction LED is significantly increased compared to common LED by Fig. 3, increase rate is greater than 50%.
New construction LED embodiment 1 prepared and common LED carry out electroluminescence and contrast the electroluminescent spectrum figure that obtains as shown in Figure 4 (under identical Injection Current, Injection Current size is 120mA), as can be seen from Fig., the centre wavelength of luminous spectrum is not drifted about, meanwhile, the spectral intensity of new construction LED also has greatly improved.
What finally illustrate is, above preferred embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although by above preferred embodiment to invention has been detailed description, but those skilled in the art are to be understood that, various change can be made to it in the form and details, and not depart from claims of the present invention limited range.
Claims (7)
1. a GaN base LED, described LED comprises the sapphire substrates, resilient coating GaN, N-shaped GaN semiconductor layer, MQW active layer, the p-type GaN semiconductor layer that stack successively, be electrically connected to the n-type electrode pad on resilient coating N-shaped GaN, be electrically connected to the p-type electrode pad on p-type GaN semiconductor layer, it is characterized in that, described LED also comprises ZnO film structure, and described ZnO film is plated on p-type GaN semiconductor layer by spin-coating method.
2. GaN base LED according to claim 1, it is characterized in that, described ZnO film thickness is 10 ~ 15nm.
3. the preparation method of GaN base LED described in claim 1 or 2, is characterized in that, concrete steps are as follows:
1) ZnO film of spin coating layer of transparent on the p-type exiting surface of the GaN base LED prepared;
2) surface of the plasma bombardment ZnO film adopting argon gas and hydrogen to be mixed to form, under the effect of high energy particle, ZnO film surface forms the alligatoring structure of lint shape;
3) the GaN base LED chip after alligatoring is placed on the three-dimensional machinery mobile platform of fs-laser system, the movement of computer control focusing objective len makes laser spot scan on GaN base LED chip light extraction face, the focus energy changing femtosecond laser controls on exiting surface, to form diameter at 1.5 ~ 2 μm, and the degree of depth is at the micropore of 40 ~ 45nm.
4. the preparation method of GaN base LED according to claim 3, is characterized in that, described step 1) adopt spin coating instrument to carry out spin coating, rotation efficiency is 8000r/s, and rotational time is 50s.
5. the preparation method of GaN base LED according to claim 3, is characterized in that, described step 2) vacuum degree of operating voltage chamber residing for 80-100 volt, plasma of plasma is 1 × 10
-3~ 7 × 10
-3handkerchief.
6. the preparation method of GaN base LED according to claim 3, it is characterized in that, step 3) described laser scanning carries out as follows: utilize 20 x Microscope Objectives to focus on the exiting surface of GaN base LED chip by the femtosecond laser that wavelength is 800nm, incident laser energy 5.8 ~ 20.2J/cm
2, pulsewidth 100 ~ 120fs, repetition rate 1kHz.
7. the preparation method of GaN base LED according to claim 3, is characterized in that, described step 2) volume ratio of argon gas and hydrogen is 3:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610006255.8A CN105428493B (en) | 2016-01-06 | 2016-01-06 | A kind of GaN base LED and preparation method thereof |
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|---|---|---|---|
| CN201610006255.8A CN105428493B (en) | 2016-01-06 | 2016-01-06 | A kind of GaN base LED and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN105428493A true CN105428493A (en) | 2016-03-23 |
| CN105428493B CN105428493B (en) | 2018-06-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109192846A (en) * | 2018-08-31 | 2019-01-11 | 宁波天炬光电科技有限公司 | Accessory grade low cost surface treatment method and a kind of device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740689A (en) * | 2008-11-26 | 2010-06-16 | Lg伊诺特有限公司 | Light emitting device and method of manufacturing the same |
| WO2012108627A2 (en) * | 2011-02-11 | 2012-08-16 | Seoul Opto Device Co., Ltd. | Light emitting diode having photonic crystal structure and method of fabricating the same |
| US20120214267A1 (en) * | 2011-02-18 | 2012-08-23 | National Cheng Kung University | Roughening method and method for manufacturing light-emitting diode having roughened surface |
| CN103682014A (en) * | 2012-09-03 | 2014-03-26 | 广东量晶光电科技有限公司 | LED with surface microstructure and manufacturing method thereof |
-
2016
- 2016-01-06 CN CN201610006255.8A patent/CN105428493B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740689A (en) * | 2008-11-26 | 2010-06-16 | Lg伊诺特有限公司 | Light emitting device and method of manufacturing the same |
| WO2012108627A2 (en) * | 2011-02-11 | 2012-08-16 | Seoul Opto Device Co., Ltd. | Light emitting diode having photonic crystal structure and method of fabricating the same |
| US20120214267A1 (en) * | 2011-02-18 | 2012-08-23 | National Cheng Kung University | Roughening method and method for manufacturing light-emitting diode having roughened surface |
| CN103682014A (en) * | 2012-09-03 | 2014-03-26 | 广东量晶光电科技有限公司 | LED with surface microstructure and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109192846A (en) * | 2018-08-31 | 2019-01-11 | 宁波天炬光电科技有限公司 | Accessory grade low cost surface treatment method and a kind of device |
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| CN105428493B (en) | 2018-06-26 |
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Inventor after: Cang Zhigang Inventor after: Tang Xiaosheng Inventor after: Wei Jing Inventor after: Ye Ying Inventor before: Tang Xiaosheng Inventor before: Cang Zhigang Inventor before: Wei Jing Inventor before: Ye Ying |
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