CN101567414B - Light-emitting diode chip and manufacturing method thereof - Google Patents
Light-emitting diode chip and manufacturing method thereof Download PDFInfo
- Publication number
- CN101567414B CN101567414B CN2009100525579A CN200910052557A CN101567414B CN 101567414 B CN101567414 B CN 101567414B CN 2009100525579 A CN2009100525579 A CN 2009100525579A CN 200910052557 A CN200910052557 A CN 200910052557A CN 101567414 B CN101567414 B CN 101567414B
- Authority
- CN
- China
- Prior art keywords
- layer
- concave
- sapphire substrate
- light
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 37
- 239000010980 sapphire Substances 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims description 26
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
- 238000013459 approach Methods 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 230000000737 periodic effect Effects 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 2
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000605 extraction Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting diode chip, which comprises a first stacked structure, an N electrode and a second stacked structure; wherein the frist stacked structure is formed by a sapphire substrate, a buffer layer and an N-type semiconductor layer sequentially, and the second stacked is formed by an active area light emitting layer, a P-type semiconductor layer and a P electrode layer sequentially, wherein the N electrode and the second stacked structure are arranged on the surface of the N-shaped semiconductor layer of the first stacked structure separately, the buffer layer isarranged on one surface of the sapphire substrate, and the other surface thereof is provided with a reflecting mirror layer with a concave and convex microstructure. The invention also provides a manufacturing method of the light-emitting diode chip, which comprises the steps of: growing the buffer layer, the N-type semiconductor layer, the active area light emitting layer, the P-type semiconductor layer, the N electrode, a transparent electrode ITO layer and the P electrode on one surface of the sapphire substrate; and manufacturing the concave and convex microstructure and the reflecting mirror layer on another surface of the sapphire substrate. The invention has the beneficial effects of effectively improving the external quantum efficiency and the brightness of the light-emitting diode.
Description
Technical field
The present invention relates to a kind of light-emitting diode chip for backlight unit and manufacturing approach thereof, particularly a kind of substrate lower surface has the convex-concave micro-structural and reaches by SiO
2Thin layer and metallic diaphragm are combined to form the light-emitting diode chip for backlight unit and the manufacturing approach thereof of mirror layer.
Background technology
Light-emitting diode have weak point long, start-up time in life-span, sound construction, energy-conservation, luminous element points of proximity light source, slim light fixture material range of choice big, need not to apply reflector, low pressure, no ultra-violet radiation, in PE, use safer, its light source production mercuryless, for plurality of advantages such as environmental protection and energy savings are significant; Therefore, outside the building taking bright, Landscape Lighting, sign and indicative illumination, interior space display lighting, public place of entertainment into consideration has a wide range of applications in fields such as stage illumination, lighting, video screen and industrial design in one's power.Especially large-power light-emitting diodes possibly realized semiconductor solid lighting because of it, causes the revolution of human illumination history, thereby becomes the research focus of present person in electronics gradually.In order to obtain the LED of high brightness; Key needs to improve the internal quantum efficiency and the external quantum efficiency of device; And the chip light extraction efficiency is the principal element of limiting device external quantum efficiency; Main cause is that the refractive index difference between epitaxial material, backing material and the air is bigger, and the light that causes active area to produce can not be derived chip in the generation total reflection of different refractivity material interface.See also Fig. 1, when the photon P that gives off with incidence angle θ
1Arrive first wall w1, after reflection can be with incidence angle θ
2Arrive the second wall w2, once more can be after the reflection with incidence angle θ
3Arrive the 3rd wall w3, then by incidence angle θ
2=90 °-θ
1, θ
3=θ
1, the material that light-emitting diode chip for backlight unit adopted all has a light escape taper critical angle (light escape cone critical angle), therefore, as long as the incidence angle θ of photon P
1Satisfy condition: light escape taper critical angle＜θ
1During＜90 °-light escape taper critical angle, then photon will be because of constantly being caused the consumption of energy in chip by the reflection of each wall, finally can't bright dipping, reduced light extraction efficiency.
Proposed several kinds of methods that improve the chip light extraction efficiencies in the prior art, having comprised: 1) adopted geometric shape, reduce the propagation distance of light, reduce the absorption loss of light at chip internal such as the structural change chip of inverted pyramid etc.; 2) adopt such as structure controls such as resonant cavity or photonic crystal and change spontaneous radiation; 3) adopt method for coarsening surface, make semiconductor and the air interface generation diffusion of light, increase the chance of its projection in alligatoring; 4) utilize technological means such as reversing welding technology.Wherein, existing coarsening technique is only to N type semiconductor or P type semiconductor surface or avris mostly, and improves luminous efficiency through back side evaporation metal mirror layer, but the speculum of being made up of simple metal is very limited to the lifting of brightness.
Therefore, how to break through prior art raising light emission rate and become the technical task that those skilled in the art need to be resolved hurrily in fact.
Summary of the invention
Technical scheme to be solved of the present invention provides a kind of light-emitting diode and manufacturing approach thereof of high light-emitting rate.
For solving technique scheme; The present invention provides a kind of light-emitting diode chip for backlight unit; Comprise successively by Sapphire Substrate, resilient coating, and the first cascade structure that forms of n type semiconductor layer, the N electrode and successively by active area luminescent layer, p type semiconductor layer, reach the second layer stack structure that the P electrode layer forms; Wherein, Said N electrode and second layer stack structure are in the N type semiconductor laminar surface of said first cascade structure discretely, and said resilient coating is in said Sapphire Substrate one surface, and another surface of said Sapphire Substrate has concave-convex micro-structure; The surface that said Sapphire Substrate has concave-convex micro-structure has one deck mirror layer of corresponding concave-convex micro-structure shape with it, and said mirror layer comprises SiO
2Thin layer and metallic diaphragm.
Preferably, said concave-convex micro-structure shape is periodic arrangement.
Preferable, said SiO
2Thin layer thickness is 10-10000
, said metallic diaphragm thickness is 10-20000
Preferable, said SiO
2Thin layer thickness is 100-5000
, said metallic diaphragm thickness is 100-10000
Preferable, said metallic diaphragm is an aluminum membranous layer.
The present invention also provides a kind of manufacturing approach of light-emitting diode chip for backlight unit; May further comprise the steps: steps A, on Sapphire Substrate one surface grown buffer layer successively, n type semiconductor layer, active area luminescent layer, and p type semiconductor layer, and make transparency electrode ITO layer and the P electrode that is in the N electrode of said N type semiconductor laminar surface and is in said P type semiconductor laminar surface; Step B, make concave-convex micro-structure on another surface of said Sapphire Substrate; Step C, on said concave-convex micro-structure, form mirror layer, wherein, the manufacturing approach of said mirror layer is: adopting the pecvd process layer thickness of growing is 10-10000
SiO
2Thin layer adopts electron beam evaporation plating mode or sputter mode at said SiO again
2Thin layer surface vapor deposition one layer thickness is 10-20000
Metallic diaphragm.
Preferable, before step B, also comprise step with another surperficial attenuate of Sapphire Substrate, polishing.
Preferable; The manufacture method of said concave-convex micro-structure is: make one deck mask layer at reducing thin of sapphire substrate, polished surface; The thickness of said mask layer is 0.5um-4um; On said mask layer, produce convex-concave pattern,, and adopt dry etch process that said convex-concave pattern is transferred on the Sapphire Substrate then through hard roasting.
Preferable; The manufacture method of said concave-convex micro-structure is: make one deck photoresist at reducing thin of sapphire substrate, polished surface; The thickness of photoresist is 0.5um-4um; Adopt photoetching process on photoresist, to produce convex-concave pattern, then through hard roasting, and adopt dry etch process with the photoresist figure transfer on Sapphire Substrate.
Preferable, said dry etch process is the ICP dry etch process.
Preferable, said concave-convex micro-structure is periodic arrangement.
Preferable, said SiO
2Thin layer thickness is 100-5000
, said metallic diaphragm thickness is 100-10000
Preferable, said metallic diaphragm is an aluminum membranous layer.
Beneficial effect of the present invention is: can effectively improve LED external quantum efficiency, promote the brightness of light-emitting diode.
Description of drawings
The total reflection sketch map takes place for the light that active area produces in Fig. 1 at a certain refraction materials interface.
Fig. 2 is a light emitting diode construction sketch map provided by the invention.
Embodiment
Specify the preferred embodiments of the present invention below in conjunction with accompanying drawing.
See also Fig. 2; Light-emitting diode chip for backlight unit provided by the invention comprises Sapphire Substrate 1; Successively at Sapphire Substrate 1 one epontic resilient coating 2 and n type semiconductor layers 3; Above-mentioned three constitutes the first cascade structure, and the active area luminescent layer 4 of growth, p type semiconductor layer 5 and P electrode layer constitute second layer stack structure successively, and said P electrode layer comprises transparency electrode ITO layer 6 and P electrode 7; N electrode 8 and said second layer stack structure are in n type semiconductor layer 3 surfaces of said first cascade structure discretely; Another surface of Sapphire Substrate 1 is a concave-convex micro-structure, and said concave-convex micro-structure can be periodic arrangement, and growth has all good mirror layers 9 of reflecting effect of the corresponding with it concave-convex micro-structure shape of one deck on said concave-convex micro-structure.Speculum 9 comprises that thickness is 10-
SiO
2Thin layer and thickness are 10-
Metallic diaphragm.Under preferable situation, said SiO
2Thin layer thickness is 100-
Said metallic diaphragm thickness is 100-
And said metallic diaphragm is an aluminum membranous layer.
For making above-mentioned luminous dual-laser, the present invention provides a kind of process, may further comprise the steps:
Step 2, at a superficial growth active area luminescent layer 4 of n type semiconductor layer 3, and p type semiconductor layer 5; And make the transparency electrode ITO layer 6 and P electrode 7 be in the N electrode 7 of said N type semiconductor laminar surface and be in said P type semiconductor laminar surface; Wherein, active area luminescent layer 4, p type semiconductor layer 5, transparency electrode ITO layer 6 and P electrode 7 are active area luminescent layer, p type semiconductor layer, transparency electrode ITO layer and the P electrode of prior art;
Step 3, with Sapphire Substrate 1 another surperficial attenuate, polishing; Adopt the technology of making graph substrate to make concave-convex micro-structure at Sapphire Substrate 1 attenuate, polished surface; The manufacture method of said concave-convex micro-structure is: make one deck mask layer at reducing thin of sapphire substrate, polished surface, the thickness of said mask layer is 0.5um-4um, on said mask layer, produces convex-concave pattern; Bake through hard then, and adopt dry etch process that said convex-concave pattern is transferred on the Sapphire Substrate; Under a preferable situation; Said mask layer is a photoresist layer; The thickness of said photoresist layer is 0.5um-4um, adopts photoetching process on photoresist, to produce convex-concave pattern, then through hard roasting; And adopt the ICP dry etch process with the photoresist figure transfer to substrate, said concave-convex micro-structure can be the concave-convex micro-structure of periodic arrangement;
Step 4, on said concave-convex micro-structure growth mirror layer 9, the manufacturing approach of speculum 9 is: adopting the pecvd process layer thickness of growing is 10-10000
SiO
2Thin layer adopts electron-beam coating equipment or sputtering equipment at SiO again
2Thin layer surface vapor deposition one layer thickness is 10-20000
Aluminum membranous layer because the lower surface of Sapphire Substrate 1 has concave-convex micro-structure, the mirror layer 9 that therefore grows on this concave-convex micro-structure is the concave-convex micro-structure shape, under preferable situation, said SiO
2Thin layer thickness is 100-5000
, said metallic diaphragm thickness is 100-10000
, and said metallic diaphragm is an aluminum membranous layer.
See also following table 1, it is contrast experiment's data of speculum technology of the present invention and existing speculum technology:
Table 1:
| Back of the body plating speculum technology | Voltage (v) | Wavelength (nm) | Luminous power (mw) |
| Ti/Al | 3.33 | 461 | 88.9 |
| SiO 2/Al | 3.29 | 461 | 127.4 |
Visible by table 1, by SiO
2The speculum that thin layer and aluminum membranous layer are combined into is higher by 43.3% than the speculum brightness of conventional Ti rete and aluminum membranous layer combination.
See also table 2 again,
Table 2:
| ? | Voltage (v) | Wavelength (nm) | Luminous power (mw) |
| Concave-convex micro-structure is arranged, and speculum is arranged | 3.31 | 461.28 | 164.1 |
| Do not have concave-convex micro-structure, but speculum is arranged | 3.32 | 462.46 | 130.6 |
By on can find out that the tube core that Sapphire Substrate 1 another surface has concave-convex micro-structure is higher by 25.6% than the tube core brightness that does not have concave-convex micro-structure.
In sum, the present invention is because another surface of Sapphire Substrate 1 is a concave-convex micro-structure, therefore; Change light reflection approach, and had special reflectors, thereby can improve light extraction efficiency greatly; Improve the external quantum efficiency of chip, and then improve the chip brightness of light-emitting diode.
Above embodiment is the unrestricted technical scheme of the present invention in order to explanation only.Do not break away from any modification or the local replacement of spirit and scope of the invention, all should be encompassed in the middle of the claim scope of the present invention.
Claims (8)
1. light-emitting diode chip for backlight unit; Comprise successively by Sapphire Substrate, resilient coating, and the first cascade structure that forms of n type semiconductor layer; The N electrode; By active area luminescent layer, p type semiconductor layer, and the second layer stack structure that forms of P electrode layer, wherein, said N electrode and second layer stack structure are in the N type semiconductor laminar surface of said first cascade structure discretely successively; Said resilient coating is in said Sapphire Substrate one surface; Said light-emitting diode chip for backlight unit is characterised in that: another surface of said Sapphire Substrate has concave-convex micro-structure, and the surface that said Sapphire Substrate has concave-convex micro-structure has one deck mirror layer of corresponding concave-convex micro-structure shape with it, and said mirror layer comprises SiO
2Thin layer and aluminum membranous layer;
Said concave-convex micro-structure shape is periodic arrangement; Said SiO
2Thin layer thickness does
Said aluminium film layer thickness does
2. light-emitting diode chip for backlight unit as claimed in claim 1 is characterized in that: said SiO
2Thin layer thickness does
Said aluminium film layer thickness does
3. the manufacturing approach of a light-emitting diode chip for backlight unit is characterized in that, may further comprise the steps:
Steps A, on Sapphire Substrate one surface grown buffer layer successively, n type semiconductor layer, active area luminescent layer, and p type semiconductor layer, and make transparency electrode ITO layer and the P electrode that is in the N electrode of said N type semiconductor laminar surface and is in said P type semiconductor laminar surface;
Step B, make concave-convex micro-structure on another surface of said Sapphire Substrate; Said concave-convex micro-structure is periodic arrangement;
Step C, on said concave-convex micro-structure, form mirror layer, wherein, the manufacturing approach of said mirror layer is: adopt the pecvd process layer thickness of growing to do
SiO
2Thin layer adopts electron beam evaporation plating mode or sputter mode at said SiO again
2Thin layer surface vapor deposition one layer thickness does
Aluminum membranous layer.
4. the manufacturing approach of light-emitting diode chip for backlight unit as claimed in claim 3 is characterized in that: before step B, also comprise the step with another surperficial attenuate of Sapphire Substrate, polishing.
5. the manufacturing approach of light-emitting diode chip for backlight unit as claimed in claim 4; It is characterized in that; The manufacture method of said concave-convex micro-structure is: make one deck mask layer at reducing thin of sapphire substrate, polished surface, the thickness of said mask layer is 0.5um-4um, on said mask layer, produces convex-concave pattern; Bake through hard then, and adopt dry etch process that said convex-concave pattern is transferred on the Sapphire Substrate.
6. the manufacturing approach of light-emitting diode chip for backlight unit as claimed in claim 5; It is characterized in that; The manufacture method of said concave-convex micro-structure is: make one deck photoresist at reducing thin of sapphire substrate, polished surface, the thickness of photoresist is 0.5um-4um, adopts photoetching process on photoresist, to produce convex-concave pattern; Then through hard roasting, and adopt dry etch process with the photoresist figure transfer on Sapphire Substrate.
7. like the manufacturing approach of claim 5 or 6 described light-emitting diode chip for backlight unit, it is characterized in that: said dry etch process is the ICP dry etch process.
8. the manufacturing approach of light-emitting diode chip for backlight unit as claimed in claim 3 is characterized in that: said SiO
2Thin layer thickness does
Said aluminum membranous layer thickness does
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100525579A CN101567414B (en) | 2009-06-04 | 2009-06-04 | Light-emitting diode chip and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100525579A CN101567414B (en) | 2009-06-04 | 2009-06-04 | Light-emitting diode chip and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101567414A CN101567414A (en) | 2009-10-28 |
| CN101567414B true CN101567414B (en) | 2012-07-25 |
Family
ID=41283480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100525579A Expired - Fee Related CN101567414B (en) | 2009-06-04 | 2009-06-04 | Light-emitting diode chip and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101567414B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102082216B (en) * | 2009-11-26 | 2013-04-24 | 上海蓝光科技有限公司 | Light emitting diode chip and manufacturing method thereof |
| CN102194928B (en) * | 2010-03-09 | 2014-04-30 | 上海蓝光科技有限公司 | Method for manufacturing light emitting diode (LED) chip |
| CN102130255A (en) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Light-emitting diode (LED), light emitting device and LED manufacturing method |
| CN103178179B (en) * | 2011-12-23 | 2015-04-01 | 山东浪潮华光光电子股份有限公司 | Silicide compound substrate GaN based LED (Light-Emitting Diode) chip with two patterned sides and manufacturing method thereof |
| CN102646779B (en) * | 2012-04-20 | 2015-04-15 | 华南师范大学 | Ceramic-based power type light-emitting diode and packaging method thereof |
| CN102931300B (en) * | 2012-11-20 | 2017-02-08 | 无锡华润华晶微电子有限公司 | Method for manufacturing back metallic reflector array in manufacturing process of GaN-based LED |
| CN103900945B (en) * | 2014-03-24 | 2017-07-28 | 江苏苏净集团有限公司 | Miniature PM2.5 detection sensors |
| CN105976725B (en) * | 2016-06-20 | 2019-04-02 | 深圳市华星光电技术有限公司 | Micro- LED display panel |
| TWI759289B (en) * | 2017-03-21 | 2022-04-01 | 晶元光電股份有限公司 | Light-emitting device |
| CN109728146A (en) * | 2018-12-25 | 2019-05-07 | 郑州师范学院 | A kind of gallium nitride diode comprising reflecting material |
| CN110246940A (en) * | 2019-06-26 | 2019-09-17 | 佛山市国星半导体技术有限公司 | A kind of reduction side goes out LED chip of light and preparation method thereof |
| CN113594319B (en) * | 2021-06-09 | 2022-08-12 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer with composite substrate and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1881624A (en) * | 2005-06-15 | 2006-12-20 | 上海蓝光科技有限公司 | Light-emitting diode and its preparation method |
| CN101212001A (en) * | 2006-12-29 | 2008-07-02 | 上海蓝光科技有限公司 | Luminous diode light extraction structure and its manufacture method |
| CN101212002A (en) * | 2006-12-29 | 2008-07-02 | 上海蓝光科技有限公司 | Luminous diode structure and its manufacture method |
| CN101335313A (en) * | 2007-06-29 | 2008-12-31 | 上海蓝光科技有限公司 | Method for enhancing antistatic effect of gallium nitride based LED and gallium nitride based LED construction |
| CN101345280A (en) * | 2008-08-28 | 2009-01-14 | 上海蓝光科技有限公司 | GaN based LED and its production method |
-
2009
- 2009-06-04 CN CN2009100525579A patent/CN101567414B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1881624A (en) * | 2005-06-15 | 2006-12-20 | 上海蓝光科技有限公司 | Light-emitting diode and its preparation method |
| CN101212001A (en) * | 2006-12-29 | 2008-07-02 | 上海蓝光科技有限公司 | Luminous diode light extraction structure and its manufacture method |
| CN101212002A (en) * | 2006-12-29 | 2008-07-02 | 上海蓝光科技有限公司 | Luminous diode structure and its manufacture method |
| CN101335313A (en) * | 2007-06-29 | 2008-12-31 | 上海蓝光科技有限公司 | Method for enhancing antistatic effect of gallium nitride based LED and gallium nitride based LED construction |
| CN101345280A (en) * | 2008-08-28 | 2009-01-14 | 上海蓝光科技有限公司 | GaN based LED and its production method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101567414A (en) | 2009-10-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101567414B (en) | Light-emitting diode chip and manufacturing method thereof | |
| CN101515624B (en) | Method for manufacturing LED chips | |
| KR20080010458A (en) | Electroluminescence light source | |
| CN101355118A (en) | Method for preparing GaN power type LED using optical compound film as electrode | |
| JP2003109749A (en) | Optical crystalline organic light emitting element of high luminous efficiency | |
| CN102130256A (en) | Light emitting diode and manufacturing method thereof | |
| CN103700749A (en) | Light-emitting diode and manufacturing method thereof | |
| Chen et al. | Study of light extraction efficiency of flip-chip GaN-based LEDs with different periodic arrays | |
| CN102082216B (en) | Light emitting diode chip and manufacturing method thereof | |
| CN101345280A (en) | GaN based LED and its production method | |
| TW201027791A (en) | A manufacturing method of a semiconductor component that has uneven substrate | |
| CN200986927Y (en) | LED with micro-optical structure | |
| CN102569588A (en) | Light-emitting diode capable of being increased in light extraction efficiency and manufacturing method thereof | |
| JP2023528194A (en) | Optical device and method of manufacturing optical device | |
| WO2012045222A1 (en) | Light emitting device and manufacturing method thereof | |
| CN102347434B (en) | Light-emitting diode (LED) chip with flip chip structure and manufacturing method thereof | |
| CN101593801B (en) | Method for preparing inverted light-emitting diodes | |
| CN101257068A (en) | Method for enhancing light extraction efficiency of high power light-emitting diode | |
| CN101419999A (en) | Method for enhancing quantum efficiency of LED | |
| CN201149873Y (en) | High power light-emitting diode chip capable of improving quantum efficiency | |
| KR101003454B1 (en) | Light emitting device and method for fabricating the same | |
| KR20140036403A (en) | Method of forming pattern in light emitting diode | |
| TWI398968B (en) | Light emitting diode structure and method of manufacturing the same | |
| CN107256916B (en) | The preparation method and LED of Light-emitting diode LED | |
| CN212907774U (en) | Periodic nano-structure LED with layered and gradually-changed refractive index |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120725 |