CN102130255A - Light-emitting diode (LED), light emitting device and LED manufacturing method - Google Patents
Light-emitting diode (LED), light emitting device and LED manufacturing method Download PDFInfo
- Publication number
- CN102130255A CN102130255A CN2010105037729A CN201010503772A CN102130255A CN 102130255 A CN102130255 A CN 102130255A CN 2010105037729 A CN2010105037729 A CN 2010105037729A CN 201010503772 A CN201010503772 A CN 201010503772A CN 102130255 A CN102130255 A CN 102130255A
- Authority
- CN
- China
- Prior art keywords
- light
- substrate
- emitting diode
- led
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention relates to a light-emitting diode (LED), comprising a substrate, an LED core, more than one tapered concave pit and reflecting films, wherein the LED core is arranged on the substrate, the more than one tapered concave pit is formed on one side of the substrate, back to the LED core, the side walls of the tapered concave pits are covered with the reflecting films, and the reflecting surfaces of the reflecting films are attached to the side walls of the tapered concave pits. The invention also relates to a light emitting device comprising the LED. An LED manufacturing method comprises the steps of: providing a substrate and forming an LED core on the substrate; thinning the substrate from the side of the substrate back to the LED core; forming the tapered concave pits on the substrate; and coating the reflecting films on the side walls of the tapered concave pits, and attaching the reflecting surfaces of the reflecting films to the side walls of the tapered concave pits. The LED provided by the invention has high light-emitting efficiency, and the LED manufacturing method is simple.
Description
Technical field
The present invention relates to technical field of semiconductors, more specifically, the present invention relates to a kind of light-emitting diode, light-emitting device and manufacturing method for LED.
Background technology
Light-emitting diode (LED) thus be response current and be excited and produce the semiconductor device of versicolor light.Wherein, be the III-V compound semiconductor of representative with gallium nitride (GaN) because have that band gap is wide, luminous efficiency is high, characteristics such as electronics saturation drift velocity height, chemical property are stable, in field of optoelectronic devices such as high brightness blue light-emitting diode, blue lasers huge application potential is arranged, caused people's extensive concern.
Yet semiconductor light-emitting-diode exists the low problem of luminous efficiency at present.For the light-emitting diode of un-encapsulated, its light extraction efficiency generally has only a few percent.Lot of energy accumulates in device inside can not outgoing, has both caused energy dissipation, influences the useful life of device again.Therefore, the light extraction efficiency of raising semiconductor light-emitting-diode is most important.
Based on above-mentioned application demand, the method that many kinds improve the light-emitting diode light extraction efficiencies is applied in the device architecture, surface roughening method for example, metallic mirror structure etc.Publication number is that the Chinese patent application of CN1858918A discloses a kind of light-emitting diode, and described light-emitting diode lower surface forms full angle reflector structure, can improve the light-emitting diode light extraction efficiency.Yet this method need form multilayer and pile up the membrane structure that forms, complex manufacturing technology by high refractive index layer and low-index layer on substrate.
Summary of the invention
The problem that the present invention solves provides a kind of light-emitting diode, to improve luminous efficiency.
For addressing the above problem, the invention provides a kind of light-emitting diode, comprise: substrate, be positioned at the LED core on the described substrate, one side of the backward luminous diode chip of described substrate is formed with an above pyramidal pits, be coated with reflectance coating on the sidewall of described pyramidal pits, the reflecting surface of described reflectance coating is attached on the sidewall of pyramidal pits.
Correspondingly, the present invention also provides a kind of light-emitting device, comprise light-emitting diode, pedestal, cap layer, first pin, second pin, described light-emitting diode comprises substrate, be positioned at the LED core on the described substrate, one side of the backward luminous diode chip of described substrate is formed with an above pyramidal pits, is coated with reflectance coating on the sidewall of described pyramidal pits, and the reflecting surface of described reflectance coating is towards the sidewall of pyramidal pits; Described pedestal comprises the assembling pit, and described assembling pit is used to be provided with described light-emitting diode; Described cap layer is covered on pedestal and the light-emitting diode; Described first pin, second pin lay respectively at the both sides of pedestal, and described first pin is connected in light-emitting diode and power cathode; Described second pin is connected in light-emitting diode and positive source.
Correspondingly, the present invention also provides a kind of manufacturing method for LED, comprises substrate is provided, and forms LED core on substrate; The described substrate of a side attenuate from backward luminous diode chip; On substrate, form pyramidal pits; On the sidewall of described pyramidal pits, apply reflectance coating.
Compared with prior art, the present invention has the following advantages:
1. a side of backward luminous diode chip comprises pyramidal pits on the substrate, and be coated with reflectance coating on the sidewall of described pyramidal pits, the reflecting surface of described reflectance coating is attached on the sidewall of pyramidal pits, the light that LED core can be sent and see through substrate reflexes to the exiting surface of light-emitting diode, has improved luminous efficiency;
2. the cap layer of light-emitting device has lens arrangement on the light direction of light-emitting diode, can assemble the light that light-emitting diode sends, and improves brightness;
3. in the manufacturing method for LED, form pyramidal pits on substrate, and the coating reflectance coating gets final product on the sidewall of pyramidal pits, manufacture method is comparatively simple.
Description of drawings
Fig. 1 is the cross-sectional view of light-emitting diode one embodiment of the present invention;
Fig. 2 is the cross-sectional view of light-emitting device one embodiment of the present invention;
Fig. 3 is the flow chart of method for manufacturing light-emitting one execution mode of the present invention;
Fig. 4 is the schematic flow sheet of step s3 one embodiment shown in Figure 3.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Set forth a lot of details in the following description so that fully understand the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not been subjected to the restriction of following public specific embodiment.
Just as stated in the Background Art, for improving the light extraction efficiency of light-emitting diode, the light-emitting diode of prior art need form multilayer and pile up the membrane structure that forms by high refractive index layer and low-index layer on substrate, but the complex manufacturing technology of described membrane structure.
At the problems referred to above, the present inventor provides a kind of light-emitting diode, one side of the backward luminous diode chip of substrate of described light-emitting diode comprises pyramidal pits, and be coated with reflectance coating on the sidewall of described pyramidal pits, the reflecting surface of described reflectance coating is attached on the sidewall of pyramidal pits, the light that LED core can be sent and see through substrate reflexes to the exiting surface of light-emitting diode, has improved luminous efficiency.
With reference to figure 1, show the cross-sectional view of light-emitting diode of the present invention.As shown in Figure 1, described light-emitting diode comprises: substrate 101, and be positioned at LED core on the substrate 101, wherein, substrate 101, one side of backward luminous diode chip is formed with an above pyramidal pits, is coated with reflectance coating (figure does not show) on the sidewall of described pyramidal pits, and the reflecting surface of described reflectance coating is attached on the sidewall of pyramidal pits; The sidewall of described pyramidal pits has certain inclination angle, be attached at that LED core can be sent and the light that see through substrate 101 of reflectance coating on the sidewall of pyramidal pits and reflex on the exiting surface of light-emitting diode, thereby improved the luminous efficiency of light-emitting diode.
Particularly, described substrate is a Sapphire Substrate, and thickness is 20～50 microns, the opening size of described pyramidal pits is 10 to 50 microns, described pyramidal pits surrounds inverted Pyramid, and for example, described pyramid is that the base is that orthohexagonal pyramid or bottom surface are foursquare pyramid.
Be formed with n type semiconductor layer 102, active layer 103, p type semiconductor layer 104 on the described substrate 101 successively, described n type semiconductor layer 102, active layer 103, p type semiconductor layer 104 have constituted LED core; In specific embodiment, the gallium nitride material that described n type semiconductor layer 102 mixes for the N type, described active layer 105 is the multiple quantum well active layer structure, particularly, adopt the InGaN material to constitute, be used to send the blue light that wavelength is 470nm, the gallium nitride material that described p type semiconductor layer 104 mixes for the P type;
Described light-emitting diode comprises that also the degree of depth extends to the opening at n type semiconductor layer 102 tops at least from p type semiconductor layer 104, described open bottom is provided with first electrode (figure do not show), and described first electrode is used to realize being electrically connected of light-emitting diode and power cathode; Preferably, described opening is positioned at the end of light-emitting diode one side, so that carry out the electrical connection between first electrode and the power cathode.
The upper surface of described p type semiconductor layer is provided with second electrode (figure do not show), and described second electrode is used to realize being electrically connected of light-emitting diode and positive source.
Correspondingly, the present invention also provides a kind of light-emitting device, shows the cross-sectional view of light-emitting device one embodiment of the present invention with reference to figure 2.As shown in Figure 2, described light-emitting device comprises: light-emitting diode, pedestal 105, cap layer 106, first pin 107, second pin 108, wherein
Light-emitting diode comprises substrate 101, is positioned at n type semiconductor layer 102, active layer 103, p type semiconductor layer 104 on the substrate 101 successively, and described n type semiconductor layer 102, active layer 103, p type semiconductor layer 104 have constituted LED core; Particularly, identical with embodiment shown in Figure 1, do not repeat them here.
Described pedestal 105 is used to carry light-emitting diode, and particularly, described light-emitting diode is arranged on the pedestal 105 according to the mode that substrate 101 is fixed in assembling pit bottom surface, and in specific embodiment, described pedestal 105 adopts metal materials such as copper, aluminium to constitute.
Described first pin 107 and second pin 108 are positioned at pedestal 105 both sides, wherein, described first pin 107 is used to realize being connected of power cathode and light-emitting diode, described first pin 107 is integrated on the pedestal 105, be electrically connected with first electrode 109 of light-emitting diode by first plain conductor 111, described second pin 108 is used to realize being connected of positive source and light-emitting diode that described second pin 108 is electrically connected with second electrode 110 of light-emitting diode by second plain conductor 112.
In specific embodiment, described first pin 107 and second pin 108 adopt the metal material identical with pedestal 105 to constitute, for example copper, aluminium etc.After in the assembling pit that light-emitting diode is positioned over pedestal 105, adopt gold ball bonding or aluminium wire ball bonding mode that one end of first plain conductor 111 is connected to first pin 107, the other end is connected to first electrode 109; Similarly, adopt gold ball bonding or aluminium wire ball bonding mode that one end of second plain conductor 112 is connected to second pin 108, the other end is connected to second electrode 110.Therefore first electrode 109 of light-emitting diode links to each other with the negative pole of power supply through first metal wire 111, first pin 107 successively, and second electrode 110 of light-emitting diode links to each other with the positive pole of power supply through second metal wire 112, second pin 108 successively.
Described cap layer 106 is covered on light-emitting diode, the pedestal 105; described cap layer 106 has lens arrangement on the light direction of light-emitting diode; described lens arrangement can be assembled the light that light-emitting diode sends; to improve the brightness of light-emitting device; in specific embodiment; described cap layer 106 adopts resin material to constitute, and described cap layer 106 can also play the effect of protection light-emitting diode.
Described cap layer 106 also is coated with fluorescent material (figure does not show) on the light direction of light-emitting diode, the described fluorescent material of the optical excitation that light-emitting diode sends can obtain white light, and for example the active layer 103 of light-emitting diode sends blue light, and described fluorescent material is for containing Ce
3+YAG fluorescent material.Preferably, for the cap layer 106 with lens arrangement, described fluorescent material is coated on the described lens arrangement.
Correspondingly, the present invention also provides a kind of manufacturing method for LED, with reference to figure 3, shows the flow chart of this manufacturing method for LED one execution mode.Described manufacturing method for LED comprises:
Step s1 provides substrate, forms LED core on substrate;
Step s2 is from the described substrate of a side attenuate of backward luminous diode chip;
Step s3 forms pyramidal pits on substrate;
Step s4 applies reflectance coating on the sidewall of described pyramidal pits, the reflecting surface of described reflectance coating is attached on the sidewall of described pyramidal pits.
For step s1, described substrate is a Sapphire Substrate, forms n type semiconductor layer, active layer, p type semiconductor layer on described substrate successively, and described n type semiconductor layer, active layer, p type semiconductor layer constitute LED core.
For step s2,, it is 20～50 microns until the thickness of described substrate from the described substrate of a side attenuate of backward luminous diode chip.
With reference to figure 4, show the schematic flow sheet of step s3 one embodiment shown in Figure 3.Described step s3 may further comprise the steps:
S31 forms mask layer on substrate;
S32, graphical described mask layer;
S33 is the described substrate of mask anisotropic etching with described patterned mask layer, forms pyramidal pits;
S34 removes mask layer.
For step s31, described mask layer can adopt hard mask, in follow-up wet etching, etchant solution to the selection of substrate and hard mask than higher, can avoid the damage of etchant solution to mask layer, so that form shape pyramidal pits preferably, particularly, the material of hard mask is a silicon dioxide.For step s33, particularly, adopt the described substrate of wet etching method etching, selected solution during wet etching, for mask layer, need have and select ratio preferably, avoid in wet etching course, destroying mask layer, for example backing material, for Sapphire Substrate, then adopt the mixed solution of sulfuric acid and phosphoric acid to carry out wet etching.
For step s34, remove mask layer by hydrofluoric acid solution,
So far, the side at the backward luminous diode chip of substrate forms a plurality of pyramidal pits.
For step s4, described reflectance coating is a barium monoxide.
So far, light-emitting diode of the present invention promptly completes.
To sum up, in the light-emitting diode provided by the invention, a side of backward luminous diode chip comprises pyramidal pits on the substrate, and be coated with reflectance coating on the sidewall of described pyramidal pits, the reflecting surface of described reflectance coating is attached on the sidewall of pyramidal pits, the light that LED core can be sent and see through substrate reflexes to the exiting surface of light-emitting diode, has improved luminous efficiency;
In the light-emitting device provided by the invention, the cap layer has lens arrangement on the light direction of light-emitting diode, can assemble the light that light-emitting diode sends, and improves brightness;
In the manufacturing method for LED provided by the invention, form pyramidal pits on substrate, and the coating reflectance coating gets final product on the sidewall of pyramidal pits, manufacture method is comparatively simple.
Though oneself discloses the present invention as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (19)
1. light-emitting diode, comprise: substrate, be positioned at the LED core on the described substrate, it is characterized in that, one side of the backward luminous diode chip of described substrate is formed with an above pyramidal pits, be coated with reflectance coating on the sidewall of described pyramidal pits, the reflecting surface of described reflectance coating is attached on the sidewall of pyramidal pits.
2. light-emitting diode as claimed in claim 1 is characterized in that, described reflectance coating is the barium monoxide reflectance coating.
3. light-emitting diode as claimed in claim 2 is characterized in that, the thickness of described substrate is 20～50 microns, and the opening size of described pyramidal pits is 10 to 50 microns.
4. light-emitting diode as claimed in claim 1 is characterized in that, described LED core comprises n type semiconductor layer, be positioned at active layer on the n type semiconductor layer, be positioned at the p type semiconductor layer on the active layer.
5. light-emitting diode as claimed in claim 4, it is characterized in that, described light-emitting diode comprises that also the degree of depth extends to the opening at n type semiconductor layer top at least from p type semiconductor layer, and described open bottom is provided with first electrode, and the upper surface of described p type semiconductor layer is provided with second electrode.
6. a light-emitting device comprises light-emitting diode, pedestal, cap layer, first pin, second pin, it is characterized in that,
Described light-emitting diode comprises substrate, be positioned at the LED core on the described substrate, one side of the backward luminous diode chip of described substrate is formed with an above pyramidal pits, be coated with reflectance coating on the sidewall of described pyramidal pits, the reflecting surface of described reflectance coating is attached on the sidewall of pyramidal pits;
Described pedestal comprises the assembling pit, and described assembling pit is used to be provided with described light-emitting diode;
Described cap layer is covered on pedestal and the light-emitting diode;
Described first pin, second pin lay respectively at the both sides of pedestal, and described first pin is connected in light-emitting diode and power cathode; Described second pin is connected in light-emitting diode and positive source.
7. light-emitting device as claimed in claim 6 is characterized in that, described reflectance coating is the barium monoxide reflectance coating.
8. light-emitting device as claimed in claim 6 is characterized in that, the thickness of described substrate is 20～50 microns, and the opening size of described pyramidal pits is 10 to 50 microns.
9. light-emitting device as claimed in claim 6 is characterized in that, described LED core comprises n type semiconductor layer, be positioned at active layer on the n type semiconductor layer, be positioned at the p type semiconductor layer on the active layer.
10. light-emitting device as claimed in claim 9, it is characterized in that, described LED core comprises that also the degree of depth extends to the opening at n type semiconductor layer top at least from p type semiconductor layer, and described opening is provided with first electrode, and the upper surface of described p type semiconductor layer is provided with second electrode.
11. light-emitting device as claimed in claim 6 is characterized in that, described cap layer has the lens arrangement that is used for converging ray on the light direction of light-emitting diode.
12. light-emitting device as claimed in claim 6 is characterized in that, described cap layer is coated with fluorescent material on the light direction of light-emitting diode.
13. light-emitting device as claimed in claim 11 is characterized in that, is coated with fluorescent material on the lens arrangement of described cap layer.
14. light-emitting device as claimed in claim 6 is characterized in that, described first pin is integrated on the pedestal.
15. light-emitting device as claimed in claim 10 is characterized in that, described first electrode is connected to first pin by first plain conductor, and described second electrode is connected to second pin by second plain conductor.
16. a manufacturing method for LED is characterized in that, comprising: substrate is provided, on substrate, forms LED core; The described substrate of a side attenuate from backward luminous diode chip; On substrate, form pyramidal pits; Apply reflectance coating on the sidewall of described pyramidal pits, the reflecting surface of described reflectance coating is attached on the sidewall of described pyramidal pits.
17. manufacturing method for LED as claimed in claim 16 is characterized in that, the step that forms pyramidal pits on the described substrate comprises: form mask layer on substrate; Graphical described mask layer; With described patterned mask layer is the described substrate of mask anisotropic etching, forms pyramidal pits; Remove mask layer.
18. manufacturing method for LED as claimed in claim 17 is characterized in that, the material of described mask layer is a silicon dioxide.
19. manufacturing method for LED as claimed in claim 17 is characterized in that, described substrate is a sapphire, and the step of the described substrate of described anisotropic etching comprises that the mixed solution of employing sulfuric acid and phosphoric acid carries out wet etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105037729A CN102130255A (en) | 2010-09-28 | 2010-09-28 | Light-emitting diode (LED), light emitting device and LED manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105037729A CN102130255A (en) | 2010-09-28 | 2010-09-28 | Light-emitting diode (LED), light emitting device and LED manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102130255A true CN102130255A (en) | 2011-07-20 |
Family
ID=44268228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105037729A Pending CN102130255A (en) | 2010-09-28 | 2010-09-28 | Light-emitting diode (LED), light emitting device and LED manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102130255A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110165027A (en) * | 2019-06-04 | 2019-08-23 | 广东省半导体产业技术研究院 | Light emitting semiconductor device and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270754A (en) * | 1997-03-24 | 1998-10-09 | Sanyo Electric Co Ltd | Semiconductor light-emitting device and light-emitting lamp |
| JP2006287113A (en) * | 2005-04-04 | 2006-10-19 | Toyoda Gosei Co Ltd | Light emitting element and light emitting device using the same |
| CN1941437A (en) * | 2005-09-26 | 2007-04-04 | 三星电机株式会社 | Gallium nitride based semiconductor light emitting diode and method of manufacturing the same |
| CN201060874Y (en) * | 2007-06-12 | 2008-05-14 | 天津工业大学 | Power type gallium nitride based LED chip |
| CN201126829Y (en) * | 2007-10-24 | 2008-10-01 | 鼎元光电科技股份有限公司 | Light emitting diode |
| CN101345274A (en) * | 2007-07-11 | 2009-01-14 | 中国科学院半导体研究所 | Method for improving luminous efficiency of GaN based LED by using graphic underlay |
| CN101567414A (en) * | 2009-06-04 | 2009-10-28 | 上海蓝光科技有限公司 | Light-emitting diode chip and manufacturing method thereof |
-
2010
- 2010-09-28 CN CN2010105037729A patent/CN102130255A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270754A (en) * | 1997-03-24 | 1998-10-09 | Sanyo Electric Co Ltd | Semiconductor light-emitting device and light-emitting lamp |
| JP2006287113A (en) * | 2005-04-04 | 2006-10-19 | Toyoda Gosei Co Ltd | Light emitting element and light emitting device using the same |
| CN1941437A (en) * | 2005-09-26 | 2007-04-04 | 三星电机株式会社 | Gallium nitride based semiconductor light emitting diode and method of manufacturing the same |
| CN201060874Y (en) * | 2007-06-12 | 2008-05-14 | 天津工业大学 | Power type gallium nitride based LED chip |
| CN101345274A (en) * | 2007-07-11 | 2009-01-14 | 中国科学院半导体研究所 | Method for improving luminous efficiency of GaN based LED by using graphic underlay |
| CN201126829Y (en) * | 2007-10-24 | 2008-10-01 | 鼎元光电科技股份有限公司 | Light emitting diode |
| CN101567414A (en) * | 2009-06-04 | 2009-10-28 | 上海蓝光科技有限公司 | Light-emitting diode chip and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110165027A (en) * | 2019-06-04 | 2019-08-23 | 广东省半导体产业技术研究院 | Light emitting semiconductor device and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI633679B (en) | Standing transparent mirrorless light emitting diode | |
| JP5372766B2 (en) | Spherical LED with high light extraction efficiency | |
| CN102130260B (en) | Luminous device and manufacturing method thereof | |
| JP5788046B2 (en) | Semiconductor light emitting device | |
| CN104638078A (en) | Light emitting diode and manufacturing method for same | |
| JP5276680B2 (en) | Light emitting device package, lighting system | |
| JP2016518029A (en) | Light emitting diode components | |
| KR20140134420A (en) | Method for manufacturing semiconductor light emitting device package | |
| CN102054914B (en) | Light emitting diode and manufacturing method thereof and light emitting device | |
| TW200929624A (en) | White light emitting diode chip and manufacturing method thereof | |
| JP2012195602A (en) | Semiconductor light-emitting element | |
| CN101937967B (en) | Light-emitting diode, light-emitting device and manufacturing method thereof | |
| CN102130254B (en) | Light emitting device and manufacturing method thereof | |
| US8945958B2 (en) | Methods for manufacturing light emitting diode and light emitting device | |
| US8580587B2 (en) | Light emitting device and manufacturing method thereof | |
| CN102130249B (en) | Super-luminance light-emitting diode and manufacturing method thereof | |
| CN102064253A (en) | Light-emitting diode and manufacture method thereof | |
| CN102130255A (en) | Light-emitting diode (LED), light emitting device and LED manufacturing method | |
| CN102136532B (en) | LED (Light-Emitting Diode) and manufacture method thereof | |
| TWI525853B (en) | Light emitting diode device, manufacturing method thereof, and flip-chip light emitting diode device | |
| KR101661621B1 (en) | Substrate formed pattern and light emitting device | |
| KR20140028288A (en) | Light emitting device | |
| KR101155033B1 (en) | Led package | |
| CN102130251B (en) | Light emitting diode (LED) and manufacturing method thereof | |
| CN117497665A (en) | Micro-LED chip structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110720 |