KR20140028288A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20140028288A
KR20140028288A KR1020120094204A KR20120094204A KR20140028288A KR 20140028288 A KR20140028288 A KR 20140028288A KR 1020120094204 A KR1020120094204 A KR 1020120094204A KR 20120094204 A KR20120094204 A KR 20120094204A KR 20140028288 A KR20140028288 A KR 20140028288A
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South Korea
Prior art keywords
light emitting
heat dissipation
layer
electrodes
emitting device
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KR1020120094204A
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Korean (ko)
Inventor
송정섭
김동우
김승용
김극
최원진
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일진엘이디(주)
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Priority to KR1020120094204A priority Critical patent/KR20140028288A/en
Publication of KR20140028288A publication Critical patent/KR20140028288A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a light emitting device, comprising: a plurality of light emitting cells each having a first and a second electrode formed on at least two semiconductor layers of a plurality of semiconductor layers; A reflective layer for reflecting light, a connection wiring connecting the first electrode of one light emitting cell and the first or second electrode of another light emitting cell, and at least a portion of the first and second electrodes of each of the at least two selected light emitting cells And an insulating heat dissipation layer which transfers heat generated from the semiconductor layer to the outside, and are formed on the insulating heat dissipation layer, which are connected to the first and second electrodes and spaced apart from each other, respectively, and transfer heat transferred from the insulating heat dissipation layer. A light emitting device including first and second heat dissipation electrodes emitting to the outside is provided.

Description

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device, and more particularly to a light emitting device capable of improving heat dissipation characteristics.

A light emitting device (LED) is an element that generates electrons and holes by using a P-N junction structure of a compound semiconductor, and emits predetermined light by recombination thereof. The light emitting device consumes less power than a conventional light bulb or a fluorescent lamp and has a long lifetime, which is advantageous in terms of reducing power consumption and durability. Therefore, the light emitting device has been used as a backlight unit of a display device, and recently, active research is being conducted to use it for general lighting purposes.

On the other hand, recent lighting devices require a high power light emitting device, and the area of the light emitting device may be increased to implement the high power light emitting device. To this end, the area of one light emitting chip can be increased to realize a large area chip. In this case, high current must be applied for high power, and for this, AC-DC voltage converter converting AC voltage power to DC voltage power and DC-DC converter converting and transforming DC voltage power to DC power. Will be driven by DC. In this case, the power factor of each converter causes the power factor of the entire circuit to be lowered, resulting in lower power consumption efficiency. For example, in order to implement a lighting device having a driving voltage of about 3.3 W and about 1 W, a power supply having a large current capacity of 350 mA or more is required. Therefore, there is a disadvantage in that the size of the power supply increases and the power factor decreases. However, in the case of a plurality of light emitting cells, the power factor can be sufficiently supplied to the load by simply connecting to an AC-DC voltage converter, thereby improving the power factor, and achieving better power consumption.

On the other hand, in order to use the light emitting device for illumination, the heat generated by the light emitting device should be effectively emitted to the outside. To this end, interest in a flip chip type light emitting device connected to the sub-mount substrate through metal bumps has recently increased.

In the case of the flip chip light emitting device, a large amount of heat generated in the plurality of light emitting cells is transferred to the submount substrate through the metal bumps, and is dissipated into the air by natural convection in the submount substrate. However, since heat generated in the light emitting device is released only through the metal bumps, the contact area with the substrate is small, and thus, effective heat dissipation is difficult and rapid deterioration of the light emitting device cannot be prevented. That is, a high current is applied for the light emitting device of high brightness, thereby increasing the amount of heat generated by the light emitting device. However, in the related art, the heat transfer path is limited to the metal bumps, so that heat generated from the light emitting device may not be properly discharged, and thus deterioration of the light emitting device is inevitable.

The present invention provides a light emitting device capable of connecting a plurality of light emitting cells and improving heat dissipation characteristics.

The present invention provides a light emitting device capable of improving heat dissipation characteristics by forming an insulating heat dissipation layer and a heat dissipation electrode using a material having excellent heat dissipation characteristics on a plurality of light emitting cells, and forming a wide heat transfer path therebetween.

A light emitting device according to an aspect of the present invention includes a plurality of light emitting cells in which first and second electrodes are formed on at least two semiconductor layers of a plurality of semiconductor layers, respectively; A reflective layer formed outside or inside the plurality of light emitting cells to reflect light emitted from the light emitting cells; Connecting wirings connecting the first electrode of one light emitting cell to the first or second electrode of another light emitting cell; An insulating heat dissipation layer formed to expose at least a portion of the first and second electrodes of each of the at least two selected light emitting cells, and transferring heat generated in the semiconductor layer to the outside; And first and second heat dissipation electrodes connected to the first and second electrodes and spaced apart from each other, and formed on the insulating heat dissipation layer, and dissipate heat transferred from the insulating heat dissipation layer to the outside.

The reflective layer may include any one of Ag, Ni, Al, Ph, Pd, Ir, Ru, Mg, Zn, Pt, Au, Ti, or an alloy thereof.

The insulating heat dissipation layer may be formed of at least one of aluminum nitride, aluminum oxide, silicon oxide, silicon nitride, silicon oxynitride, and beryllium oxide.

The heat dissipation insulating layer may be formed to a thickness of 5㎛ to 500㎛.

The first and second heat dissipation electrodes or connection wirings are Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rn, Ir, W, Ti, Ag, Cr, Mo, Nb, Al, Ni, Cu, Sn, V or an alloy thereof may be included.

The first and second heat dissipation electrodes or connection wires may be formed by stacking at least two or more selected from AuSn, W, Au, Ni, Al, Ti, Pt, or an alloy thereof.

The first and second heat dissipation electrodes may be formed to have a thickness of 0.5 μm to 100 μm.

At least one of the plurality of light emitting cells may have an inclined side surface.

At least one of the plurality of light emitting cells may have a pad formed on at least one of the first and second electrodes.

The pad may be formed in a light emitting cell connected to the first and second heat dissipation electrodes among a plurality of light emitting cells.

In the light emitting device according to the embodiments of the present invention, an insulating heat dissipation layer is formed on a plurality of light emitting cells connected in series, and the heat dissipation electrodes connected to two light emitting cells selected through a predetermined region of the insulating heat dissipation layer and spaced apart from each other. Is formed. The insulating heat dissipation layer may be formed of a material having electrical insulation properties and heat transfer characteristics, and the heat dissipation electrodes may be formed to a maximum size within a range that does not electrically influence each other. That is, the area of the heat dissipation electrode can be maximized while minimizing the separation distance between the heat dissipation electrodes.

As the insulating heat dissipation layer and the heat dissipation electrode are formed, heat generated from the plurality of light emitting cells is discharged through the insulating heat dissipation layer and the heat dissipation electrode. Therefore, the heat transfer path can be expanded to improve the heat dissipation characteristics of the light emitting device, thereby preventing deterioration of the light emitting device.

In addition, since the heat dissipation electrode is formed in a wide range of light emitting elements, the connection area with the submount substrate increases, whereby the submount substrate can be more firmly connected.

In addition, since the plurality of light emitting cells may be connected in series, parallel, or in parallel, and driven at a low current, the size of the power supply device may be reduced, and thus the power factor may be improved.

In addition, the light emitted toward the heat dissipation electrode may be reflected to the bottom thereof so that all the light may be emitted in a direction opposite to the heat emission path, and the straightness of the light may be improved.

As a result, the high current light emitting device can be used in various ways such as a lighting device.

1 is a schematic plan view of a light emitting device according to an embodiment of the present invention.
Figure 2 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention.
3 is a schematic plan view of a light emitting device according to another embodiment of the present invention;
Figure 4 is a schematic cross-sectional view of a light emitting device according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of other various forms of implementation, and that these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of invention to those skilled in the art. It is provided to let you know completely. In the drawings, the thickness is enlarged to clearly illustrate the various layers and regions, and the same reference numerals denote the same elements in the drawings.

1 is a schematic plan view of a light emitting device according to an embodiment of the present invention, Figure 2 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention.

1 and 2, a light emitting device according to an embodiment of the present invention includes a plurality of light emitting cells 10 formed on the same substrate 110 and a plurality of connection wires connecting two light emitting cells 10. 20, an insulating heat dissipation layer 200 formed over the entire structure to expose at least a portion of the selected two light emitting cells 10, and for dissipating heat generated from the light emitting cells 10; It is formed spaced apart from each other so as to be connected to the one light emitting cell 10 and the other light emitting cell 10 through the 200, and includes heat dissipation electrodes 210a and 210b for dissipating heat transferred through the insulating heat dissipation layer 200. do. Here, the plurality of light emitting cells 10 may be connected in series by the connection line 20. Of course, the plurality of light emitting cells 10 may be connected in parallel by the connection line 20, or may be connected in series and parallel in series and in parallel.

The plurality of light emitting cells 10 may be formed on the same substrate 110. In addition, the plurality of light emitting cells 10 may be formed in the same size and may be formed spaced apart from each other by the same interval. However, the plurality of light emitting cells 10 may be formed in different sizes for each region, and may be formed at different intervals. For example, the plurality of light emitting cells 10 may be formed in different sizes according to regions according to the amount of heat generated per unit area, and the light emitting cells 10 formed in the edge area may have a smaller area than the light emitting cells 10 formed in the center area. Can be formed. In addition, an interval of the light emitting cells 10 formed at the edge region may be smaller than an interval of the light emitting cells 10 formed at the center portion. On the other hand, at least one light emitting cell 10 may be formed inclined side. That is, the connection wiring 20 is formed in contact with the side surface of the light emitting cell 10. When the side surface of the light emitting cell 10 is vertical, the connection wiring 20 is not easily formed and the connection wiring 20 is disconnected. Therefore, at least two side surfaces of the light emitting cell 10 in which the connection line 20 is formed may be inclined. In this case, the light emitting cell 10 may be formed at an inclination of, for example, 30 ° to 60 °.

In addition, in order to prevent the first semiconductor layer 120, the active layer 130, and the second semiconductor layer 140 of the light emitting cell 10 from being shorted by the connection wiring 20, a sidewall of the light emitting cell 10 may be provided on the sidewall of the light emitting cell 10. An insulating film 200 may be formed. The connection line 20 is formed between the two light emitting cells 10 to electrically connect the two light emitting cells 10. The connection line 20 may connect the second electrode 170 of the other light emitting cell 10 from the first electrode 150 of the one light emitting cell 10. Therefore, the plurality of light emitting cells 10 may be connected in series. Of course, the plurality of light emitting cells 10 may be connected in parallel by connecting the first electrode 150 of the other light emitting cell 10 from the first electrode 150 of the one light emitting cell 10 by the connection wiring 20. The plurality of light emitting cells 10 may be connected by connecting the first or second electrodes 150 and 170 of the other light emitting cell 10 to the first or second electrodes 150 and 170 of the one light emitting cell 10. It may be connected in parallel. Meanwhile, the connection wire 20 may use a metal having excellent conductivity and excellent heat dissipation characteristics. For example, the connection wire 20 may be formed of the same material as the heat dissipation electrodes 210a and 210b to be described later. The connection wiring 20 is, for example, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rn, Ir, W, Ti, Ag, Cr, Mo, Nb, Al, Ni, Cu, It may be formed of any one of Sn, V or an alloy thereof, and may be formed of a single layer or a plurality of layers. In addition, when the connection line 20 is formed of a plurality of layers, at least two or more selected from AuSn, W, Au, Ni, Al, Ti, Pt, or an alloy thereof may be stacked. As such, the connection wiring 20 may be formed of a metal having excellent heat dissipation characteristics, and thus may further improve heat dissipation characteristics of the light emitting device together with the insulating heat dissipation layer 200 and the heat dissipation electrodes 210a and 210b.

In addition, the light emitting device according to the embodiments of the present invention may include the first semiconductor layer 120, the active layer 130, and the second semiconductor layer 140, the active layer 130, and the second semiconductor stacked on the substrate 110. A light emitting cell including a first electrode 150 formed on the first semiconductor layer 120 exposed by partially etching the layer 140 and a second electrode 170 formed on the second semiconductor layer 140. 10), a reflection layer 160 formed outside or inside the light emitting cell 10 to reflect light emitted from the light emitting cell 10, and light emission for insulation of the connection wiring 20 and the light emitting cell 10. The insulating layer 180 formed on the side of the cell 10, the pad 190 formed on the second electrode 170 of the selected light emitting cell 10, the pad 190 and the other light emitting cell 10 It is formed on the entire structure to expose at least a portion of the first electrode 150, respectively, through the insulating heat dissipation layer 200 and the insulating heat dissipation layer 200 for dissipating heat generated from the light emitting cell 10. Respectively connected to the first electrode 150 of the light emitting cells pad 190 of 10 and the other light emitting cells 10, and may include a heat radiation electrode (210a, 210b) spaced apart from each other. Accordingly, in each of the light emitting cells 10, the light generated from the active layer 130 is reflected by the reflective layer 160 and is emitted toward the substrate 110.

The substrate 110 refers to a conventional wafer for fabricating a light emitting device, and preferably, a material suitable for growing a nitride semiconductor single crystal may be used. For example, the substrate 110 may use any one of Al 2 O 3 , SiC, ZnO, Si, GaAs, GaP, LiAl 2 O 3 , BN, AlN, and GaN.

The first semiconductor layer 120 may be an N-type semiconductor doped with N-type impurities, thereby supplying electrons to the active layer 130. For example, the first semiconductor layer 120 may use a GaN layer doped with Si. However, the present invention is not limited thereto, and various semiconductor materials are possible. That is, a compound in which nitrides such as GaN, InN, AlN (Group III-V), and such nitrides are mixed at a constant ratio may be used. For example, AlGaN may be used. Meanwhile, the light emitting device 100 forms a buffer layer (not shown) including AlN or GaN to mitigate lattice mismatch with the substrate 110 before forming the first semiconductor layer 120 on the substrate 110. You may. In addition, an undoped layer (not shown) may be formed on the buffer layer. The undoped layer may be formed of a layer which is not doped with impurities, for example, an undoped GaN layer.

The active layer 130 has a predetermined band gap and is a region where quantum wells are made to recombine electrons and holes. The active layer 130 may be formed of a multi-quantum well structure (MQW) in which a plurality of quantum well layers and barrier layers are repeatedly stacked. For example, the active layer 130 of the multi-quantum well structure may be formed by repeatedly stacking InGaN and GaN, or may be formed by repeatedly stacking AlGaN and GaN. In this case, since the emission wavelength generated by the combination of electrons and holes is changed according to the type of material constituting the active layer 130, it is preferable to adjust the semiconductor material included in the active layer 130 according to the target wavelength. That is, the wavelength of light generated in the active layer 130 can be variously controlled by adjusting the amount of In in the quantum well layer. For example, as the In content of the InGaN quantum well layer increases, the band gap becomes smaller and the emission wavelength is increased, thereby emitting light from the ultraviolet region to all visible region such as blue, green, and red. . In addition, the emission wavelength may be changed by adjusting the thickness of the quantum well layer. For example, when the thickness of the InGaN quantum well layer is increased, the band gap may be reduced to emit red light. In addition, white light may be obtained using a multilayer structure of a quantum well layer. That is, white light may be obtained as a whole by controlling the In content differently in at least one layer of the multilayer InGaN quantum well layer to configure blue light emission, green light emission, and red light emission. Meanwhile, the active layer 130 is formed by removing a region where the first electrode 150 is to be formed, and may be formed by removing an edge portion, for example, a corner portion of the light emitting cell 10.

The second semiconductor layer 140 may be a semiconductor layer doped with P-type impurities, thereby supplying holes to the active layer 130. For example, the second semiconductor layer 140 may use a GaN layer doped with Mg. However, the present invention is not limited thereto, and various semiconductor materials are possible. That is, a compound in which nitrides such as GaN, InN, AlN (Group III-V), and such nitrides are mixed at a predetermined ratio may be used. For example, various semiconductor materials including AlGaN and AlInGaN may be used. In addition, the second semiconductor layer 140 may be formed as a single layer or may be formed as a multilayer. Meanwhile, the second semiconductor layer 140 is formed by removing a region where the first electrode 150 is to be formed, and may be formed by removing a portion of an edge of the light emitting cell 10, for example, a corner portion.

The first and second electrodes 150 and 170 may be formed using a conductive material, for example, a single layer or a metal material such as Ti, Cr, Au, Al, Ni, Ag, or an alloy thereof. It can be formed in multiple layers. Here, the first electrode 150 is spaced apart from the active layer 130 and the second semiconductor layer 140 to be formed in a predetermined region above the first semiconductor layer 120, the second electrode 170 is to spread the current To this end, it may be formed in the entire region of the second semiconductor layer 140. That is, since the second semiconductor layer 140 has a vertical resistance such as several to several tens of resistance and a horizontal resistance such as several to several Hz, the current does not flow in the horizontal direction but only in the vertical direction. do. Therefore, when power is locally applied to the second semiconductor layer 140, since no current flows through the second semiconductor layer 140, the second electrode 170 is formed on the entire upper portion of the second semiconductor layer 140. 2 allows current to flow through the semiconductor layer 140 as a whole. In addition, the reflective layer 160 may be formed between the second semiconductor layer 140 and the second electrode 170 to reflect light emitted to the second electrode 170. That is, the reflective layer 160 reflects the light generated from the active layer 130 and emitted in the direction of the second semiconductor layer 140 in the direction of the substrate 110 so that all the light is emitted toward the substrate 110. The reflective layer 160 is formed of a material having a high reflectance while reducing contact resistance with the second semiconductor layer 140 having a relatively large energy band gap. For example, the reflective layer may be formed of Ag, Ni, Al, Ph, Pd, Ir, Ru, Mg, Zn, Pt, Au, Ti, and alloys thereof, and preferably has a reflectance of 90% or more. In this case, the second electrode 170 may be formed on the reflective layer 160 or larger than the reflective layer 160 to surround the reflective layer 160. In addition, the reflective layer 160 may be formed inside or outside the plurality of light emitting cells 10 to reflect light emitted from the light emitting cells 10. That is, the light emitting cell 10 may be formed on the active layer 130 or on the second semiconductor layer 140, and the contact surface or the insulating heat dissipating layer 200 may be formed between the light emitting cell 10 and the insulating heat dissipating layer 200. The light emitted from the active layer 130 is formed on the contact surface between the heat dissipation electrodes 210a and 210b to effectively emit the light toward the substrate 110.

The insulating layer 180 is formed to prevent the first semiconductor layer 120, the active layer 130, and the second semiconductor layer 140 of the light emitting cell 10 from being shorted by the connection wiring 20. Therefore, the insulating layer 180 is formed at least on the side of the light emitting cell 10. That is, the insulating layer 180 may be formed only on the side surface of the light emitting cell 10, and may be formed from the side surface of the one light emitting cell 10 to the side surface of the other light emitting cell 10 beyond the substrate 110. . The insulating layer 180 may be formed using a silicon oxide film (SiO 2 ), a silicon nitride film (Si 3 N 4 ), or the like, and may be formed of a single layer or a plurality of layers.

The pad 190 is formed in a predetermined region on the second electrode 170 of at least one light emitting cell 10. For example, the pad 190 may be formed on the second electrode 170 of the one light emitting cell 10 positioned at the outermost side in the vertical direction. In addition, the pad 190 may be formed on the first electrode 150 of the other light emitting cell 10 positioned at the outermost side in the horizontal direction. The pad 190 is formed for smooth connection between at least one of the first and second electrodes 150 and 170 and the heat dissipation electrodes 210a and 210b. Of course, the pad 190 is not formed on the first and second electrodes 150 and 170, and the heat dissipation electrodes 210a and 210b may be directly connected to the first and second electrodes 150 and 170. The pad 190 may be formed of the same material as the connection line 20 or may be formed by the same process. The pad 190 and the connection wiring 20 may be formed in a single layer or multiple layers using, for example, a metal material such as Ti, Cr, Au, Al, Ni, Ag, or an alloy thereof. That is, the pad 190 and the connection line 20 may be formed of the same material as the first and second electrodes 150 and 170, and may be formed of the same material as the reflective layer 160. It can be formed as.

The insulating heat dissipation layer 200 allows heat generated from the active layer 130 to be discharged to the outside. The insulating heat dissipation layer 200 may be formed to have the same thickness and may be formed on the light emitting device along the step of the light emitting device. Of course, the insulating heat dissipation layer 200 may have a flat top. The insulating heat dissipation layer 200 may be formed of a material having both heat transfer characteristics and electrical insulation characteristics such as oxides, nitrides, and compounds. For example, the insulating heat dissipation layer 200 may include aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), and silicon oxynitride (SiON). ), Beryllium oxide (BeO), and the like. In addition, the insulating heat dissipation layer 200 may be formed of a single layer of such a heat transfer insulating material, or may be formed of a stack thereof or a mixed material thereof. Meanwhile, the insulating heat dissipation layer 200 is formed to expose at least a portion of the first electrode 150 of the one light emitting cell 10 and the pad 190 of the other light emitting cell 10, respectively. That is, the insulating heat dissipation layer 200 is formed to expose at least a portion of the first electrode 150 of the one light emitting cell 10 connected to the external power source and the pad 190 of the other light emitting cell 10. For example, the pad 190 of the outermost one light emitting cell 10 in the vertical direction and the first electrode 150 of the other outermost light emitting cell 10 in the horizontal direction positioned at the furthest distance are exposed. An insulating heat dissipation layer 200 is formed. In addition, the insulating heat dissipation layer 200 may be formed to have a thickness of, for example, 5 μm to 500 μm. Here, when the insulating heat dissipation layer 200 is formed to a thickness of 5 μm or less, for example, semiconductor layers formed to a thickness of about 5 μm, that is, the first semiconductor layer 120, the active layer 130, and the second semiconductor The thickness of the layer 140 is thinner than that of the step coverage problem, and when formed to 500 μm or more, there is a problem of increasing the thickness of the device. Therefore, the insulating heat dissipation layer 200 can be formed to a thickness within a range that does not increase the thickness of the device to more than the desired thickness without causing a step coverage problem.

The heat dissipation electrodes 210a and 210b are formed on the insulating heat dissipation layer 200 to be connected to the pad 190 of the one light emitting cell 10 and the first electrode 150 of the other light emitting cell 10. In this case, the heat dissipation electrode 210a connected to the one light emitting cell 10 and the heat dissipation electrode 210b connected to the other light emitting cell 10 are formed to be spaced apart from each other by a predetermined interval. In addition, the heat dissipation electrodes 210a and 210b may be formed to have a large area on the insulating heat dissipation layer 200, thereby maximizing the heat dissipation effect. That is, the heat dissipation electrodes 210a and 210b may be formed to have a large area so as to be in a range that does not electrically influence each other to increase the heat transfer area. For example, the area of the heat dissipation electrodes 210a and 210b may be 90% to 99% of the area of the light emitting device in which the plurality of light emitting cells 10 are formed. When the area of the heat dissipation electrodes 210a and 210b is 90% or less, the heat dissipation effect is reduced, and when the heat dissipation electrodes 210a and 210b are greater than or equal to 99%, the two heat dissipation electrodes 210a and 210b may contact each other, thereby causing an electrical problem. The heat dissipation electrodes 210a and 210b may use a metal having excellent conductivity. For example, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rn, Ir, W, Ti, Ag, Cr , Mo, Nb, Al, Ni, Cu, Sn, V or an alloy thereof may be formed, and may be formed of a single layer or a plurality of layers. When the heat dissipation electrodes 210a and 210b are formed of a plurality of layers, at least two or more selected from AuSn, W, Au, Ni, Al, Ti, Pt, or an alloy thereof may be stacked. The heat dissipation electrodes 210a and 210b may be connected to the sub-mount substrate, and may be formed to a thickness of 0.5 to 100 μm according to the application target of the light emitting device. That is, the heat dissipation electrodes 210a and 210b may have a thickness at the highest portion of the insulating heat dissipation layer 200 formed along the step of the light emitting device, that is, the thickness of the thinnest portion is 0.5 to 100 μm. For example, when the light emitting device is applied to the COB, the heat dissipation electrodes 210a and 210b may be formed to a thickness of 0.5 to 4 μm, but the eutectic bonding is difficult at 0.5 μm or less, and the overall thickness is increased to 4 μm or more. At the same time, economics are reduced. In addition, when the light emitting device is applied to a type in which the bonding metal region has the sizes of the heat dissipation electrodes 210a and 210b, the heat dissipation electrodes 210a and 210b may be formed to a thickness of 1 to 100 μm. Tick bonding is difficult, and more than 100 μm increases the overall thickness and decreases economic efficiency.

As described above, in the light emitting device according to the exemplary embodiment, the insulating heat dissipation layer 200 is formed on the front surface, and the heat dissipation electrodes 210a and 210b are formed on the upper surface, so that the heat transfer path of the light emitting device is directed to the front surface of the light emitting device. It can be enlarged, thereby improving heat dissipation characteristics. That is, in the case of implementing a light emitting device by applying a high current to implement high brightness, the amount of heat generated increases with the application of a high current. However, in the related art, the heat transfer path is limited to the metal bumps, so that heat generated from the light emitting device may not be properly discharged, and thus deterioration of the light emitting device is inevitable. However, the present invention can improve the heat dissipation characteristics by expanding the heat transfer path to the insulating heat dissipation layer 200 and the heat dissipation electrodes 210a and 201b. In addition, since the plurality of light emitting cells 10 may be connected in series, parallel, or in parallel, and may be driven with low current, the size of the power supply device may be reduced, and thus the power factor may be improved.

On the other hand, the light emitting device of the present invention can be applied to all the various structures in which a plurality of light emitting cells are connected. For example, as shown in FIGS. 3 and 4, the first electrode 150 may be applied to a structure in which the first electrode 150 is exposed on the first semiconductor layer 120 that is etched and exposed in the center portion of the light emitting cell 10. 3 and 4 are plan and schematic cross-sectional schematic views of light emitting devices according to other embodiments of the present invention.

First, the first semiconductor layer 120, the active layer 130, and the second semiconductor layer 140 are sequentially formed on the substrate 110, and then the plurality of light emitting cells 10 are determined to determine the plurality of light emitting cells 10. The second semiconductor layer 140, the active layer 130, and the first semiconductor layer 120 are etched to expose a plurality of predetermined regions. Subsequently, for example, the second semiconductor layer 140 and the active layer 130 in the central portion of the light emitting cell 10 are etched to expose the first semiconductor layer 120. Subsequently, the reflective layer 160 and the second electrode 170 are formed on the second semiconductor layer 140, the first electrode 150 is formed on the first semiconductor layer 120, and the one light emitting cell 10 is formed. The pad 190 is formed on the second electrode 170 of FIG. Here, the second electrode 170 may be formed on the entire upper portion of the second semiconductor layer 140, or may be formed in an extended shape from one region as shown in FIG. 3. In addition, the pad 190 is formed in the light emitting cell 10 formed at one edge of the plurality of light emitting cells 10. For example, the pad 190 is formed in the outermost light emitting cell 10 in the horizontal direction. Of course, the pad 190 may be formed on the first electrode 150 of the other light emitting cell 10, for example, the pad on the first electrode 150 of the outermost light emitting cell 10 in the vertical direction. 190 may be formed. Subsequently, an insulating layer 180 is formed over the entirety, and the insulating layer 180 is formed to expose at least a portion of the first electrode 150 and the second electrode 170 of each light emitting cell 10. In addition, the insulating layer 180 is formed to expose the pad 190 formed only in the one light emitting cell 10. Subsequently, a connection line 20 is formed to connect the first electrode 150 of the one light emitting cell 10 and the second electrode 170 of the other light emitting cell 170 to a predetermined region on the insulating layer 180. Subsequently, the insulating heat dissipation layer 200 is formed on the entire upper part, and the insulating heat dissipation layer 200 is formed so as to planarize the upper part of the light emitting device. Subsequently, a predetermined region of the insulating heat dissipation layer 200 is etched to expose the pad 190 of the one light emitting cell 10 and the second electrode 150 of the other light emitting cell 10. For example, the other light emitting cell 10 exposing the second electrode 150 may be the outermost light emitting cell 10 in the vertical direction farthest from the one light emitting cell 10 in which the pad 190 is formed. Subsequently, the heat dissipation electrodes 210a and 210b are formed to contact the exposed second electrode 150 and the pad 190 and to be spaced apart from each other by a predetermined interval.

Although the technical idea of the present invention has been specifically described according to the above embodiments, it should be noted that the above embodiments are for explanation purposes only and not for the purpose of limitation. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

110 substrate 120 first semiconductor layer
130: active layer 140: second semiconductor layer
150, 170: first and second electrodes 160: reflective layer
180: insulating layer 190: pad
200: insulating heat dissipation layer 210a, 210b: heat dissipation electrode

Claims (10)

A plurality of light emitting cells each having first and second electrodes formed on at least two semiconductor layers of the plurality of semiconductor layers;
A reflective layer formed outside or inside the plurality of light emitting cells to reflect light emitted from the light emitting cells;
Connecting wirings connecting the first electrode of one light emitting cell to the first or second electrode of another light emitting cell;
An insulating heat dissipation layer formed to expose at least a portion of the first and second electrodes of each of the at least two selected light emitting cells, and transferring heat generated in the semiconductor layer to the outside; And
And first and second heat dissipation electrodes connected to the first and second electrodes and spaced apart from each other, and formed on the insulating heat dissipation layer and dissipating heat transferred from the insulating heat dissipation layer to the outside.
The light emitting device of claim 1, wherein the reflective layer comprises any one of Ag, Ni, Al, Ph, Pd, Ir, Ru, Mg, Zn, Pt, Au, Ti, or an alloy thereof.
The light emitting device of claim 1, wherein the insulating heat dissipation layer is formed of at least one of aluminum nitride, aluminum oxide, silicon oxide, silicon nitride, silicon oxynitride, and beryllium oxide.
The light emitting device of claim 3, wherein the heat dissipation insulating layer has a thickness of about 5 μm to about 500 μm.
The method of claim 1, wherein the first and second heat dissipation electrodes or connection wirings are Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rn, Ir, W, Ti, Ag, Cr, Mo, A light emitting device comprising any one of Nb, Al, Ni, Cu, Sn, V, or an alloy thereof.
The light emitting device of claim 1, wherein the first and second heat dissipation electrodes or connection wirings are formed by stacking at least two or more selected from AuSn, W, Au, Ni, Al, Ti, Pt, or an alloy thereof.
The light emitting device of claim 1, wherein the first and second heat dissipation electrodes have a thickness of 0.5 μm to 100 μm.
The light emitting device of claim 1, wherein at least one of the plurality of light emitting cells is formed to have an inclined side surface.
The light emitting device of claim 1, wherein at least one of the plurality of light emitting cells has a pad formed on at least one of the first and second electrodes.
The light emitting device of claim 9, wherein the pad is formed in a light emitting cell connected to the first and second heat dissipation electrodes among a plurality of light emitting cells.


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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160126944A (en) * 2016-10-19 2016-11-02 주식회사 세미콘라이트 Semiconductor light emitting device
CN115966642A (en) * 2022-12-29 2023-04-14 淮安澳洋顺昌光电技术有限公司 High-voltage light-emitting diode chip
CN118299484A (en) * 2024-06-06 2024-07-05 南昌凯捷半导体科技有限公司 Red light high-voltage LED chip and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160126944A (en) * 2016-10-19 2016-11-02 주식회사 세미콘라이트 Semiconductor light emitting device
CN115966642A (en) * 2022-12-29 2023-04-14 淮安澳洋顺昌光电技术有限公司 High-voltage light-emitting diode chip
CN115966642B (en) * 2022-12-29 2024-03-12 淮安澳洋顺昌光电技术有限公司 High-voltage light-emitting diode chip
CN118299484A (en) * 2024-06-06 2024-07-05 南昌凯捷半导体科技有限公司 Red light high-voltage LED chip and manufacturing method thereof

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