CN106784232A - A kind of method that utilization periodicity diffusing structure improves LED chip light extraction efficiency - Google Patents
A kind of method that utilization periodicity diffusing structure improves LED chip light extraction efficiency Download PDFInfo
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- CN106784232A CN106784232A CN201611219372.9A CN201611219372A CN106784232A CN 106784232 A CN106784232 A CN 106784232A CN 201611219372 A CN201611219372 A CN 201611219372A CN 106784232 A CN106784232 A CN 106784232A
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- ito
- led chip
- light extraction
- extraction efficiency
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Abstract
The invention discloses the method that one kind improves light emitting diode (LED) chip light-emitting efficiency using periodicity diffusing structure, in the transparent electrode layer tin indium oxide of LED（ITO）Layer deposition conductive ITO or zinc oxide (ZnO) nano particle, so as to improve the light extraction efficiency of LED, and lossless device electrology characteristic.The processing step is：1）The polystyrene of packed mono-layer is prepared on the LED chip for having made thick gold electrode（PS）Nanosphere；2）The size of oxygen plasma etch PS nanospheres can be used, control the size of mask ball；3）Deposition ITO or ZnO film；4）Remove mask, obtain periodic ITO or ZnO nano-structure.The present invention is to make additional ITO or ZnO nano-structure on the surface of ITO, and effectively the wave guide mode inside ITO can be coupled out, and LED chip is not etched into whole process, so as to not interfere with the electrology characteristic of device.
Description
Technical field
It is more particularly to a kind of to improve LED chip using periodicity diffusing structure the present invention relates to a kind of light emitting diode
The method of light extraction efficiency.
Background technology
Used as the substitute products of conventional lamp, light emitting diode (LED) is received extensively as a kind of new type light source of environmental protection
General concern.LED light source is directly to convert electrical energy into luminous energy, and energy conversion efficiency is at a relatively high, and it only needs to white heat in theory
The energy consumption of lamp 10% or the energy consumption of fluorescent lamp 50%.However, due to there is critical total internal in LED, result in LED's
Luminous efficiency is relatively low.During total reflection causes the photon that LED is produced from escaping into air, incidence angle exceedes critical total internal
Photon can inside LED roundtrip, until photon energy is converted into the interior energy of LED, overheat LED, the lost of life, light extraction
Efficiency is greatly reduced.Therefore, the research for improving light extraction efficiency of LED has certain meaning.
Because GaN material has refractive index higher, so as to cause the relatively low extraction efficiencies of LED, therefore, using nanometer technique
Related micro nano structure or coarse surface is prepared, so as to increase the critical angle of light output, the complete of LED material interfaces is destroyed
Reflection, it should be the method for most directly improving LED light extraction efficiency.For example, Hao et al. methods of photoetching are in planar structure
The nanometer conical structure of p-GaN surfaces fabrication cycle, the light extraction efficiency with the nanostructured sample can also increase to reference
2.2 times or so (App. Phys. Express 2014,7 of sample: 102101).Hsieh et al. is then using the two of 100nm
Silica bead obtains the nm cylinder that height is about 70nm as mask by etching, and they distinguish nano patterning p-GaN
Surface and ITO surface, obtain 38.5% and 27.9% light output enhancing (IEEE Electron Device Lett.
2008, 29: 658).Hou et al. then uses a diameter of 1.5 microns of PS beads as mask, and six are made on the surface of p-GaN
Angle nano-pore battle array, compared with traditional LED, its light output increases by 45% (Appl. Phys. Lett. 2009,95:
133105).Additionally, nano patterning is not limited to patterned surface, by increasing etching depth, each epitaxial layer is included
Active layer is performed etching, and can further improve light extraction efficiency (the Opt. Express 2010,18 of LED: 7664).For example
Huang et al. etches into GaN multiple quantum well layers from p-GaN always by the use of the silica nanosphere of 100nm diameters as mask,
Forming micro-nano LED array structure, and inject rotation cloth glass prevents pn-junction short circuit, can not only strengthen light extraction, and make light extraction more
Concentrate on normal direction (IEEE J. Sel. Topics Quantum Electron. 2009,15: 1242).Shin et al.
Similar technology is also adopted by, n-GaN layers is etched into always from ITO layer, etching depth is 500nm, obtain maximum intensification factor
It is 1.37 times of (IEEE J. Quantum Electron. 2010,46 of common LED: 116).
In the method for raising LED light extraction efficiency discussed above, the preparation of related nanostructured needs etching technics, this
The electrology characteristic of a little etching technics meeting General Influence devices, has leakage current higher so as to cause device.And present LED's
Transparency electrode is done thinner and thinner, if performed etching again to the transparency electrode of ITO, can have a strong impact on the electrology characteristic of LED.To understand
Certainly above mentioned problem, of the invention to devise a kind of method for not needing etching technics to improve LED light extraction efficiency, i.e., in the saturating of LED
Prescribed electrode layer ITO layer deposition ZnO or ITO nanostructureds, so as to improve the light extraction efficiency of LED, and lossless device electricity
Characteristic.
The content of the invention
The present invention is intended to provide a kind of method that utilization periodicity diffusing structure improves LED chip light extraction efficiency, it is using additional
Nanostructured improve the light extraction efficiency of LED chip, and electrology characteristic to LED is had no effect.Preparing thickness
The LED chip of gold electrode, in the transparent electrode ITO layer deposition ITO or ZnO periodic nanometers particle or nano-pore battle array knot of chip
Structure, the light extraction efficiency of LED is improved using nano particle scattering.
The object of the invention to solve the technical problems is realized using following technical scheme.Proposed according to the present invention
A kind of light extraction efficiency that LED chip is improved using additional periodic nano-structure, i.e. the transparent electrode layer ITO layer in LED are sunk
Product ITO or ZnO nano-structure, the method for the present invention are comprised the following steps：
1）The PS nanospheres of individual layer are made on the surface for preparing the conventional LED chips of thick gold electrode, first can be carved with oxonium ion
Erosion microballoon, controls the size of microballoon, and LED surface is not etched；Then different duties are obtained with this microballoon as template
The nanosphere mask of ratio.
2）Certain thickness ito thin film is deposited using the method for magnetron sputtering, ultrasound removes PS masks and electricity in chloroform
Pole protective layer, can obtain periodic ITO or ZnO nano-structure.
In the present invention, can be according to the different so as to select various sizes of PS nanospheres, no of the emission wavelength of LED chip
Same etching PS nanosphere times and different ITO or ZnO deposition thickness.
Preparation technology of the invention, it is possible to use magnetron sputtering or other related methods are thin to deposit ITO or ZnO
Film, then removes mask so as to obtain the nanostructured of correlation.
In preparation technology of the invention, the material for being deposited can be ITO or ZnO material, or other lead
The optically transparent material of electricity.In step 1, in order that sample has more preferable electric conductivity, prepare individual layer PS nanospheres it
Before, thick gold electrode protective layer can be prepared with the method for photoetching, the PS nanosphere masks of individual layer are then prepared again, other method is not
Become.
By above-mentioned technical proposal, present invention has the advantage that：
1st, the present invention is to prepare additional nanostructured on the transparency electrode surface of LED chip, lossless without using etching technics
The electrology characteristic of device, can effectively improve the luminous efficiency of LED.
2nd, design principle of the invention is simple, preparation method is ingenious, is a kind of design and preparation of novel micro nanometer structure LED
Technique.
Brief description of the drawings
This preparation technology is described further below in conjunction with drawings and Examples：
Fig. 1 is process of preparing flow chart of the invention.
Fig. 2 is the schematic diagram that packed mono-layer PS nanospheres are prepared in the LED surface for preparing transparency electrode and thick gold electrode.
Fig. 3 is using oxygen plasma etch PS nanosphere mask structure schematic diagrames.
Fig. 4 is the mask surface deposition certain thickness after being etched（20-300nm）ZnO or ITO structure.
Fig. 5 obtains periodicity ZnO or ITO nanostructured schematic diagram to remove mask.
Indicated in figure as follows：101- substrates；102- undoped GaN；103-n doping GaN；104- MQWs；105-p mixes
Miscellaneous GaN；106-ITO transparency electrodes；107-p thickness metal electrodes；109-n thickness metal electrodes；108-PS nanospheres；110 and 111 is equal
It is ZnO the or ITO particles of sputtering.
Specific embodiment
With reference to the accompanying drawings and examples to proposed by the present invention a kind of using additional periodic nano-structure raising LED
The process of preparing of the light extraction efficiency of chip is described further.Fig. 1 is process chart of the invention, Fig. 2-Fig. 5 displays
Be step schematic diagram of the invention.Process of preparing step of the invention is as follows：
（1）The structure of LED substrates is as follows：One layer of undoped GaN102 is deposited in Sapphire Substrate 101, one layer of n of regrowth mixes
Miscellaneous GaN103, then grows MQW 104, finally grows p doping GaN105.Deposit certain thickness indium tin oxide
（ITO）106, as transparency electrode, then carry out the conventional Electrode treatment that adds again, and such as resist coating exposes, wet etching for the first time
ITO, ICP carve GaN steps, remove photoresist, then resist coating；Expose for second, the plating p thickness gold thick gold 109 etc. of 107 and n.It is close using individual layer
The polystyrene of a diameter of 1000nm of row（PS）Nanosphere 108 is distributed in the surface of LED substrates, Fig. 2 be prepare it is transparent
Electrode prepares the schematic diagram of packed mono-layer PS nanospheres with the LED surface of thick gold electrode.
（2）Using oxygen plasma etch 5 seconds or so, PS nanospheres are etched, its diameter can be efficiently controlled.Fig. 3 is
Using the structural representation after oxygen plasma etch PS nanosphere masks.
（3）Using the ITO of magnetron sputtering deposition 100nm, Fig. 4 is the mask surface deposition certain thickness after being etched
ITO the or ZnO structures of 100nm.
（4）Ultrasonic some minutes in chloroform, remove PS masks, obtain periodic ITO nanostructureds.Fig. 5 is to remove
Mask, obtains periodicity ZnO or ITO nanostructured schematic diagram.
The above, is only presently preferred embodiments of the present invention, and any formal limitation is not made to the present invention, therefore
It is every without departing from technical solution of the present invention content, any simply repaiied according to what technical spirit of the invention was made to above example
Change, equivalent variations and modification, still fall within the range of technical solution of the present invention.
Claims (6)
1. a kind of method that utilization periodicity diffusing structure improves LED chip light extraction efficiency, it is characterised in that：For having made
The LED chip of thick gold electrode is got ready, in transparent electrode ITO layer deposition cycle nano particle or nano-pore the battle array knot of chip
Structure, using nano particle scattering improve LED light extraction efficiency, described nano structural material be visible light wave range transmitance compared with
Conductive material high.
2. the method that utilization periodicity diffusing structure according to claim 1 improves LED chip light extraction efficiency, its feature exists
In：The periodic nanometer grain structure is ITO materials or zinc oxide（ZnO）Material.
3. the method that utilization periodicity diffusing structure according to claim 1 improves LED chip light extraction efficiency, its feature exists
In comprising the following steps：
A, prepare the polystyrene of packed mono-layer on the LED chip surface for preparing thick gold electrode（PS）Nanosphere；First with oxygen from
Son etching microballoon, controls the size of microballoon, and the nanosphere mask of different dutycycles is then obtained with this microballoon as template；
B, method deposition ITO or ZnO film using magnetron sputtering, ultrasound removes thick gold electrode protective layer and PS is covered in chloroform
Film, obtains periodic ITO or ZnO nano-structure.
4. the method that utilization periodicity diffusing structure according to claim 3 improves LED chip light extraction efficiency, its feature exists
In：In step a, before the PS nanospheres for preparing individual layer, thick gold electrode protection is prepared on LED chip using the method for photoetching
Layer, then prepares the PS nanospheres of individual layer again, and the thickness of the thick golden light photoresist electrode protecting layer is 1-3 microns.
5. the method that utilization periodicity diffusing structure according to claim 3 improves LED chip light extraction efficiency, its feature exists
In：In step a, the nanosphere of packed mono-layer is prepared in ITO layer, the nanosphere is monodispersed polystyrene microsphere, described
The diameter of polystyrene microsphere is between 100nm-2um.
6. the method that utilization periodicity diffusing structure according to claim 3 improves LED chip light extraction efficiency, its feature exists
In：In step b, the ITO or ZnO nano-structure prepared on LED transparent electrode ITO surfaces are nano-grain array or periodic
Hole battle array structure.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107579135A (en) * | 2017-09-06 | 2018-01-12 | 蚌埠玻璃工业设计研究院 | A kind of surface has the zno-based transparent conducting glass preparation method of micro-structural |
| CN111430571A (en) * | 2020-04-09 | 2020-07-17 | 武汉华星光电半导体显示技术有限公司 | O L ED display panel |
| CN111933769A (en) * | 2020-08-19 | 2020-11-13 | 广东技术师范大学 | Preparation method of periodic nano-structure LED with layered and gradually-changed refractive index |
| CN112071503A (en) * | 2020-08-04 | 2020-12-11 | 南开大学 | Method for realizing multifunctional composite transparent conductive film and application |
| CN114613875A (en) * | 2020-12-09 | 2022-06-10 | 苏州阿特斯阳光电力科技有限公司 | Battery preparation method for improving double-sided rate of battery and battery prepared by method |
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| CN101877330A (en) * | 2009-04-30 | 2010-11-03 | 和椿科技股份有限公司 | Sapphire substrate with period structure |
| CN105845791A (en) * | 2016-05-30 | 2016-08-10 | 广东技术师范学院 | High-efficiency nano-structure light emitting diode (LED) and design and fabrication methods thereof |
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| CN101877330A (en) * | 2009-04-30 | 2010-11-03 | 和椿科技股份有限公司 | Sapphire substrate with period structure |
| CN105845791A (en) * | 2016-05-30 | 2016-08-10 | 广东技术师范学院 | High-efficiency nano-structure light emitting diode (LED) and design and fabrication methods thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107579135A (en) * | 2017-09-06 | 2018-01-12 | 蚌埠玻璃工业设计研究院 | A kind of surface has the zno-based transparent conducting glass preparation method of micro-structural |
| CN111430571A (en) * | 2020-04-09 | 2020-07-17 | 武汉华星光电半导体显示技术有限公司 | O L ED display panel |
| CN112071503A (en) * | 2020-08-04 | 2020-12-11 | 南开大学 | Method for realizing multifunctional composite transparent conductive film and application |
| CN111933769A (en) * | 2020-08-19 | 2020-11-13 | 广东技术师范大学 | Preparation method of periodic nano-structure LED with layered and gradually-changed refractive index |
| CN114613875A (en) * | 2020-12-09 | 2022-06-10 | 苏州阿特斯阳光电力科技有限公司 | Battery preparation method for improving double-sided rate of battery and battery prepared by method |
| CN114613875B (en) * | 2020-12-09 | 2024-02-23 | 苏州阿特斯阳光电力科技有限公司 | Battery preparation method for improving double-sided rate of battery and prepared battery |
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