CN105428430A - Multi-junction GaAs solar cell surface grid line structure - Google Patents
Multi-junction GaAs solar cell surface grid line structure Download PDFInfo
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- CN105428430A CN105428430A CN201510950062.3A CN201510950062A CN105428430A CN 105428430 A CN105428430 A CN 105428430A CN 201510950062 A CN201510950062 A CN 201510950062A CN 105428430 A CN105428430 A CN 105428430A
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- Prior art keywords
- solar cell
- grid line
- thin grid
- light
- grid lines
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 12
- 210000004027 cell Anatomy 0.000 title abstract description 39
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 230000005693 optoelectronics Effects 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000009827 uniform distribution Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 208000016253 exhaustion Diseases 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a multi-junction GaAs solar cell surface grid line structure. The multi-junction GaAs solar cell surface grid line structure comprises a solar cell, wherein an effective light-affected area on the surface of the solar cell is circular; main grid lines are arranged in the part, except the effective light-affected area, of the solar cell; a plurality of thin grid lines in radial uniform distribution by taking the middle point of the solar cell as the center are arranged in the effective light-affected area; light energy incident to the effective light-affected area is effectively converted into electric energy in a double manner; and current through photovoltaic conversion is transmitted onto the main grid lines after being collected through the thin grid lines. According to the multi-junction GaAs solar cell surface grid line structure, by adopting the design of the circular light-affected area, under the condition that the shape of a light spot converged by optical systems such as some spherical or non-spherical surface optical systems is approximately circular, the effective utilization ratio of the solar cell is improved; and moreover, due to the design of the radial thin grid lines, the density of the thin grid lines closer to the center of the light-affected area is increased, so that the collecting and current-carrying capacity of high current density generated in a high luminous intensity area at the center is improved, and the efficiency of the solar cell is improved.
Description
Technical field
The invention belongs to technical field of solar utilization technique, particularly one ties GaAs solar battery surface grid line structure more.
Background technology
Solar energy have the restriction of clean, No Assets region, concerning the mankind forever without good characteristics such as exhaustions, be more and more subject to the favor of people, wherein solar energy photovoltaic utilization and the sunlight technology that is directly changed into electric energy by photovoltaic device is especially noticeable.
In traditional photovoltaic solar battery component, solar cell use amount is larger, cause the cost of electricity-generating of photovoltaic generation comparatively conventional power generation usage cost exceed several times, because of which limit photovoltaic power generation technology scale application, constrain the development of whole industry.In order to save the use amount of solar cell, reduce the production cost of photovoltaic solar battery component, in existing photovoltaic solar battery component, the technological means adopting optically focused, is irradiated to after making light collection on high efficiency multijunction solar cell, to reduce the consumption of solar cell again.
As shown in Figure 1, light-receiving area designed by the multijunction solar cell of current market is generally rectangle, its main gate line 3 is distributed in both sides, and have many thin grid lines 4 for collecting photogenerated current in the middle of battery, and thin grid line is in evenly arrangement, carry out connection in series-parallel by main gate line and other solar cells to be combined, obtain required voltage and current.This design is more reasonable for the square uniform light spots by being formed after condenser system, but other optical system is as spherical in some or aspherical curved optic system actual hot spot 6 shape that converges be sub-circular, and the Energy distribution of its hot spot uneven, generally present center strong, the trend that edge is weak, therefore the design of the light area of this rectangle effectively can not collect photogenerated current, on the contrary can uneven due to hot spot, the capacity gauge of central area grid line to electric current is poor and cause the loss of battery efficiency, as shown in Figure 2, subcircular hot spot after condenser system is irradiated to solar battery surface, can see in such cases, the light-receiving area utilance of solar battery surface is not high, and the light intensity of light-receiving area central area is very big, and edge is more weak, and the thin grid line of this kind of design is equally distributed, therefore the current density of center light strength thin grid line carrying can be caused larger, thus cause loss in efficiency.Cost simultaneously due to the multijunction solar cell adopting MOCVD explained hereafter is very high, and the low rising causing cost of the utilance of light-receiving area.
Summary of the invention
The object of the invention is to: for above-mentioned Problems existing, provide a kind of and can improve solar cell effective rate of utilization and the many knot GaAs solar battery surface grid line structures to electric current collection and current capacity.
Technical scheme of the present invention is achieved in that a kind of many knot GaAs solar battery surface grid line structures, comprise solar cell, it is characterized in that: effective light area of described solar battery surface is rounded, part on described solar cell, outside effective light area is main gate line, radially equally distributed some thin grid lines are provided with centered by solar cell mid point in described effective light area, the luminous energy being injected into effective light area is effectively doubly converted to electric energy, and the electric current of opto-electronic conversion is reached in main gate line after being collected by thin grid line.
Many knot GaAs solar battery surface grid line structures of the present invention, it is provided with the thin grid line of central circular in the center of described solar cell, solar cell corresponding in the thin grid line of described central circular is not provided with thin grid line, and all thin with the central circular grid line of radial some thin grid lines is connected.
The present invention adopts circular light-receiving area design, for optical system as spherical in some or aspherical curved optic system the light spot shape that converges be the situation of sub-circular, the effective rate of utilization of its solar cell is improved, simultaneously, due to the design of radial thin grid line, make the density of the thin grid line the closer to center, light area larger, this adds increased the collection to the high current density that high light intensity region, center produces and current capacity, improve the efficiency of solar cell.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing multijunction solar cell surface grid line.
Fig. 2 is the schematic diagram that rounded optically focused hot spot is radiated on existing multijunction solar cell.
Fig. 3 is structural representation of the present invention.
Fig. 4 is the schematic diagram that rounded optically focused hot spot is radiated on solar cell of the present invention.
Mark in figure: 1 is solar cell, and 2 is effective light area, and 3 is main gate line, and 4 is thin grid line, the thin grid line of annulus centered by 5, and 6 is hot spot.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail.
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As shown in Figures 3 and 4, a kind of many knot GaAs solar battery surface grid line structures, comprise solar cell 1, effective light area 2 on described solar cell 1 surface is rounded, for optical system as spherical in some or aspherical curved optic system hot spot 6 shape that converges be the situation of sub-circular, the effective rate of utilization of solar cell can be made to be improved, on described solar cell 1, part outside effective light area 2 is main gate line 3, radially equally distributed some thin grid lines 4 are provided with centered by solar cell 1 mid point in described effective light area 2, the luminous energy being injected into effective light area 2 is effectively doubly converted to electric energy, the electric current of opto-electronic conversion reaches in main gate line 3 after being collected by thin grid line 4, due to the arrangement of radial thin grid line, make the closer to center, light area, the density of thin grid line is larger, Energy distribution for hot spot presents the trend situation that center is strong and edge is weak, which increase the thin grid line of solar battery surface to the collection of the high current density that high light intensity region, center produces and current capacity, thus improve the efficiency of solar cell.
Wherein, be provided with the thin grid line 5 of central circular in the center of described solar cell 1, solar cell 1 corresponding in the thin grid line of described central circular 5 is not provided with thin grid line, and all thin with the central circular grid line 5 of radial some thin grid lines 4 is connected.Because the spot center light intensity after converging is high, and thin grid line forms cross knot chalaza in central area, because thin grid line has reflex to the converged light inciding solar battery surface, and the light intensity at center is high, thin grid line will be caused like this to have obvious reflex at the incident light of cross knot chalaza to high strength at light-receiving area center.By the central area of solar cell is designed to white space, namely in the thin grid line of central circular, thin grid line is not set, be conducive to reducing the reflecting effect of thin grid line to incident light, simultaneously due to the thin grid line of central circular around, also can ensure the collection to the photogenerated current that central area produces, thus the efficiency of solar cell can be improved further.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. tie GaAs solar battery surface grid line structure one kind more, comprise solar cell (1), it is characterized in that: effective light area (2) on described solar cell (1) surface is rounded, on described solar cell (1), part outside effective light area (2) is main gate line (3), radially equally distributed some thin grid lines (4) are provided with centered by solar cell (1) mid point in described effective light area (2), the luminous energy being injected into effective light area (2) is effectively doubly converted to electric energy, the electric current of opto-electronic conversion is reached in main gate line (3) after being collected by thin grid line (4).
2. many knot GaAs solar battery surface grid line structures according to claim 1, it is characterized in that: the center of described solar cell (1) is provided with the thin grid line of central circular (5), solar cell (1) corresponding in the thin grid line of described central circular (5) is not provided with thin grid line, and all thin with the central circular grid line (5) of radial some thin grid lines (4) is connected.
Priority Applications (1)
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CN201510950062.3A CN105428430A (en) | 2015-12-18 | 2015-12-18 | Multi-junction GaAs solar cell surface grid line structure |
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CN201510950062.3A CN105428430A (en) | 2015-12-18 | 2015-12-18 | Multi-junction GaAs solar cell surface grid line structure |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS556388A (en) * | 1978-06-20 | 1980-01-17 | Wurlitzer Co | Lsi circuit tip for electronic organ |
JP2001358359A (en) * | 2000-06-16 | 2001-12-26 | Nippon Sheet Glass Co Ltd | Semiconductor light receiving element |
CN102945867A (en) * | 2012-10-22 | 2013-02-27 | 国电科技环保集团股份有限公司 | Photovoltaic cell for receiving circular light spots and preparation method thereof |
US20130139878A1 (en) * | 2010-04-07 | 2013-06-06 | Applied Materials, Inc. | Use of a1 barrier layer to produce high haze zno films on glass substrates |
CN203941915U (en) * | 2014-04-30 | 2014-11-12 | 江苏爱多光伏科技有限公司 | A kind of radial solar energy electrode grid line structure |
-
2015
- 2015-12-18 CN CN201510950062.3A patent/CN105428430A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS556388A (en) * | 1978-06-20 | 1980-01-17 | Wurlitzer Co | Lsi circuit tip for electronic organ |
JP2001358359A (en) * | 2000-06-16 | 2001-12-26 | Nippon Sheet Glass Co Ltd | Semiconductor light receiving element |
US20130139878A1 (en) * | 2010-04-07 | 2013-06-06 | Applied Materials, Inc. | Use of a1 barrier layer to produce high haze zno films on glass substrates |
CN102945867A (en) * | 2012-10-22 | 2013-02-27 | 国电科技环保集团股份有限公司 | Photovoltaic cell for receiving circular light spots and preparation method thereof |
CN203941915U (en) * | 2014-04-30 | 2014-11-12 | 江苏爱多光伏科技有限公司 | A kind of radial solar energy electrode grid line structure |
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