CN102945867A - Photovoltaic cell for receiving circular light spots and preparation method thereof - Google Patents
Photovoltaic cell for receiving circular light spots and preparation method thereof Download PDFInfo
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- CN102945867A CN102945867A CN2012104044620A CN201210404462A CN102945867A CN 102945867 A CN102945867 A CN 102945867A CN 2012104044620 A CN2012104044620 A CN 2012104044620A CN 201210404462 A CN201210404462 A CN 201210404462A CN 102945867 A CN102945867 A CN 102945867A
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Abstract
The invention discloses a photovoltaic cell for receiving circular light spots and a preparation method thereof. The cell comprises a cell piece and a main grid pattern prepared on the cell piece, wherein the cell piece takes a shape of a circle or a regular polygon with five or more edges, and the main grid pattern is formed along the periphery of the cell piece. By adopting the invention, the non-illumination area of the whole cell piece can be reduced, the utilization ratio of materials can be improved, expensive backing materials can be saved and the purpose of lowering cost can be realized.
Description
Technical field
The present invention relates to a kind of photovoltaic cell for concentration photovoltaic system and preparation method thereof, relate in particular to a kind of photovoltaic cell that receives circular light spot and preparation method thereof.
Background technology
The III-V family batteries such as GaAs (GaAs), indium gallium arsenic, the absorption coefficient of light is high, and photoelectric conversion efficiency is high; When the material of different energy gaps is formed laminated cell, can effectively absorb the sunlight of different wave length; And temperature coefficient is low, thereby is a kind of desirable condensation photovoltaic battery.The condensation photovoltaic battery normally is gathered in large-area sunlight on the hot spot of a small size by concentrator such as Fresnel Lenses, and photovoltaic cell can obtain more energy output under high-intensity hot spot irradiation.
Common III-V family cell piece 10 is square, such as 10mm * 10mm or 5mm * 5mm etc., and both sides or prepare main grid utmost point electrode 20 all around, as shown in Figure 1, but effective illuminating area ratio of this class battery is little.Condenser system for circular light spot, the area that hot spot 30 accounts for whole battery only has 78.5398%, if spot radius is 5mm, main grid utmost point electrode 20 width are 0.25mm, as shown in Figure 2, can calculate hot spot and can be blocked 1.11% by main grid utmost point electrode, actual effectively illuminating area only accounts for 77.66372% of whole battery.Backing material GaAs (GaAs) or germanium (Ge) wafer expensive, nearly 20% material is wasted, and must increase product cost.How reducing cost, strengthen the competitiveness of condensation photovoltaic battery and other types battery, is condensation photovoltaic battery industry problem in the urgent need to address.
Summary of the invention
One of the object of the invention is to propose a kind of photovoltaic cell for concentration photovoltaic system and preparation method thereof, can save material, increases the effective illuminating area of battery, improves stock utilization.
According to an aspect of the present invention, a kind of photovoltaic cell for receiving circular light spot is proposed, described battery comprises cell piece and the main grid utmost point pattern for preparing at cell piece, wherein, described cell piece be shaped as circle or limit number more than or equal to five regular polygon, described main grid utmost point pattern forms along the periphery of cell piece.
According to one embodiment of present invention, described cell piece be shaped as circle, described main grid utmost point pattern is the circular loop pattern that the periphery along the circular batteries sheet forms, the inside radius of described annulus equals the radius of described circular light spot.
According to one embodiment of present invention, described cell piece has the regular hexagon shape, and described orthohexagonal inscribe radius of a circle equals the radius of circular light spot, and described main grid utmost point pattern is the pattern that is formed between orthohexagonal inscribed circle and the regular hexagon.
According to one embodiment of present invention, described cell piece has the regular hexagon shape, and described orthohexagonal inscribe radius of a circle equals the radius of circular light spot, and described main grid utmost point pattern is the regular hexagon pattern along the periphery formation of cell piece.
According to one embodiment of present invention, described cell piece has the regular hexagon shape, described orthohexagonal inscribe radius of a circle equals the radius of circular light spot, and described main grid utmost point pattern is along the regular hexagon pattern of the periphery formation of cell piece and the stack pattern of the pattern between orthohexagonal inscribed circle and regular hexagon.
According to one embodiment of present invention, described cell piece has the regular hexagon shape, and described main grid utmost point pattern is the pattern that forms between circular and its outside regular hexagon corresponding to circular light spot.
According to one embodiment of present invention, described cell piece be shaped as positive heptagon, described main grid utmost point pattern is the pattern that forms at the periphery place of positive heptagon cell piece.
According to another aspect of the present invention, propose a kind of method for preparing photovoltaic cell, described photovoltaic cell is used for receiving circular light spot, said method comprising the steps of:
At Grown battery functi on layer;
Utilize photoetching process, form inner grid level and main grid level pattern at the battery functi on layer; And
Shape according to main grid utmost point pattern cuts into independent cell piece with substrate;
Wherein, formed cell piece be shaped as circle or limit number more than or equal to five regular polygon, form described main grid utmost point pattern along the periphery of cell piece.
The method for preparing photovoltaic cell according to an embodiment of the invention, wherein, formed cell piece be shaped as circle, described main grid utmost point pattern is the circular loop pattern that the periphery along the circular batteries sheet forms, the inside radius of described annulus equals the radius of described circular light spot.
The method for preparing photovoltaic cell according to an embodiment of the invention, wherein, formed cell piece be shaped as regular hexagon, described main grid utmost point pattern is the pattern that forms at the periphery place of regular hexagon cell piece.
The method for preparing photovoltaic cell according to an embodiment of the invention, wherein, formed cell piece be shaped as positive heptagon, described main grid utmost point pattern is the pattern that forms at the periphery place of positive heptagon cell piece.
According to the present invention, by the cell shapes of circle or regular polygon is provided, and correspondingly design main grid utmost point pattern, backing material that can conserve expensive, reduce the non-illuminating area of whole cell piece, improve the utilance (effectively illuminating area/cell piece area) of material, realize reducing the purpose of battery cost.
Description of drawings
Fig. 1 is the profile schematic diagram of conventional batteries sheet;
Fig. 2 shows the optically focused hot spot on the cell piece that shines Fig. 1;
Fig. 3 is the schematic diagram according to the battery structure of an embodiment;
Fig. 4 a-4f shows cell piece and main grid utmost point pattern according to various embodiments of the present invention.
Embodiment
Describe the present invention below in conjunction with accompanying drawing and exemplary embodiment.Note, the description of the drawings and specific embodiments is just in order to understand better the present invention, and the present invention is not limited to described embodiment.Accompanying drawing is also not necessarily drawn in proportion.
Fig. 3 is the schematic diagram of multi-layer cell structure according to an embodiment of the invention.As shown in the figure, described battery comprises substrate 1, the backplate 7 for preparing on a surface of substrate 1, and the battery functi on layer 2 of growing on another surface of substrate 1, the contact layer 3 that forms at battery functi on layer 2 and antireflective coating 4, the main grid utmost point 6 confluxes in the internal gate 5 of contact layer 3 preparations and outside.
Its preparation process is as follows:
1. on the substrates such as GaAs or Ge wafer 1, utilize mocvd (MOCVD) or alternate manner growth unijunction or multijunction cell functional layer 2;
2. form Surface Contact layer 3 at battery functi on layer 2;
3. gluing, photoetching on contact layer 3, the unnecessary contact layer of erosion removal is removed photoresist;
4. form again gluing, photoetching on the contact layer 3 of pattern, utilizing the mode such as the electron beam evaporation single or multiple lift antireflective coating of growing, removing photoresist;
5. gluing, photoetching on contact layer 3 and antireflective coating 4 prepares metal electrode at contact layer 3, forms the pattern of internal gate 5 and the outside main grid utmost point 6 that confluxes, and removes photoresist;
6. 1 back side growing metal backplate 7 on substrate;
7. bulk of substrate is cut according to the shape of main grid utmost point pattern, obtain the cell piece of circle or regular polygon.
In above-mentioned steps 5, the pattern 6a-6f of the prepared main grid utmost point can be shown in Fig. 4 a-4f.
In above-mentioned steps 7, the shape of formed cell piece 1a-1f can be shown in Fig. 4 a-4f.
The preparation process of above-mentioned battery adopts positive assembling structure, if inverted structure, then photoetching, antireflective coating and electrode growth order can be different.
Fig. 4 a-4f shows cell piece 1a-1f and the upper main grid utmost point pattern 6a-6f for preparing thereof according to various embodiments of the present invention.According to the example embodiment of Fig. 4 a-4f, the width of main grid line 6a-6f is set as 0.25mm, spot radius R is 5mm.Respectively cell piece and the main grid utmost point pattern thereof of each embodiment are described referring to accompanying drawing.
In the embodiment shown in Fig. 4 a, cell piece 1a is shaped as the circle with radius R 1, main grid utmost point pattern 6a is the circular loop pattern along the periphery formation of circular batteries sheet 1a, the inside radius of described annulus equals to form the radius R of circular light spot of the condenser system of circular light spot, and the radius of whole cell piece is that R1 is 5.25mm.Therefore, main grid utmost point pattern 6a forms in the outside of circular light spot, and hot spot can not blocked by main grid utmost point pattern 6a.Calculate as can be known area=π 52/ π 5.252=90.7029% of the utilance of battery material=effective illuminating area/cell piece.
In the embodiment shown in Fig. 4 b-4e, cell piece 1a-1e has respectively the regular hexagon shape, and main grid utmost point pattern 6a-6e is the pattern that forms at the periphery place of regular hexagon cell piece 1a-1e respectively.
Particularly, according to Fig. 4 b, cell piece 1b is shaped as the regular hexagon shape, and described orthohexagonal inscribe radius of a circle equals the radius R of circular light spot.Main grid utmost point pattern 6b is the pattern that is formed between orthohexagonal inscribed circle and the regular hexagon.Hot spot can not blocked by main grid utmost point pattern 6b.As calculated as can be known, the utilance of its battery material is 90.69%.But when adopting this scheme, need to consider the structure of inner grid line 5, the situation that the main grid line can't extracted current can not occur in the tangent position of circular and hexagon.
According to Fig. 4 c, cell piece 1c is shaped as the regular hexagon shape, and described orthohexagonal inscribe radius of a circle equals the radius R of circular light spot, and main grid utmost point pattern 6c is the regular hexagon pattern that the periphery along cell piece 6c forms.Adopt the main grid utmost point pattern of Fig. 4 c, compare with Fig. 4 b, can be blocked sub-fraction by main grid utmost point pattern 6a at position hot spot circular and that hexagon is tangent.But, reduced and occurred the possibility that the main grid utmost point can not fine extracted current among Fig. 4 b, increase the reliability of the battery main grid utmost point.The battery material utilance is 87.6552%, and light can covered 6*0.438047=2.628282mm
2, account for 3.3464% of whole optically focused hot spot.
According to Fig. 4 d, cell piece 1d is shaped as the regular hexagon shape, described orthohexagonal inscribe radius of a circle equals the radius R of circular light spot, and main grid utmost point pattern 6d is along the regular hexagon pattern of the periphery formation of cell piece and the stack pattern of the pattern between orthohexagonal inscribed circle and regular hexagon.Identical with Fig. 4 c, can be blocked sub-fraction by main grid utmost point pattern 6a at position hot spot circular and that hexagon is tangent.Fig. 4 d battery material utilance is identical with Fig. 4 c, and just main grid utmost point pattern is obtained by the main grid utmost point pattern among Fig. 4 b and the stack of the main grid utmost point pattern among Fig. 4 c.
According to Fig. 4 e, cell piece 1e is shaped as the regular hexagon shape, and main grid utmost point pattern 6e is the pattern that forms between circular and its outside regular hexagon corresponding to circular light spot.That is, compare with Fig. 4 b-4d, the outside mobile 0.25mm of the hexagon of Fig. 4 e, main grid utmost point pattern 6e forms in the outside of circular light spot, and hot spot can not blocked by main grid utmost point pattern 6e.Its stock utilization is 82.2585%.
In the embodiment shown in Fig. 4 f, cell piece 1f is shaped as positive heptagon, and described just heptagonal inscribe radius of a circle equals the radius R of circular light spot, and main grid utmost point pattern 6f is the pattern that forms at the periphery place of positive heptagon cell piece 1f.Can be blocked sub-fraction by main grid utmost point pattern 6f at the tangent position hot spot of circular and positive heptagon.Its utilance is 89.5556%.Light can covered 7*0.438047=3.066308mm
2, account for 3.9041% of whole optically focused hot spot.
According to the distortion of Fig. 4 f, if positive heptagon is that the circular light spot of R extends out 0.25mm by radius, then the battery material utilance is 84.5298%.
By more as can be known, adopt cell piece and the main grid utmost point pattern of above embodiment, compare with conventional batteries, can reduce non-effective illuminating area, increase effective illuminating area proportion, improve the utilance (effectively illuminating area/cell piece area) of material, realize the reduction of battery cost.
Several example embodiment of the present invention has below just been described.According to instruction of the present invention, those skilled in the art obviously can understand, the shape of cell piece or main grid utmost point pattern is not limited to circle, regular hexagon or positive heptagon, and can be the limit numbers more than or equal to any regular polygon of five.In addition, the shape of main grid utmost point pattern also can design arbitrarily as required.But, consider the cutting complexity, generally select pentagon to octagon.
In addition, above embodiment is set as 0.25mm with the width of main grid line, and spot radius is 5mm, certainly also can adopt other size.Among Fig. 4 a-4f, the shape of all inner grid lines 5 is signal just, can adopt other shape to reduce and be connected to the current loss that confluxes between the main grid line 6.
Also need to prove, in actual battery, no matter adopt which kind of main grid utmost point pattern, all main grid utmost point patterns and battery cutting edge need to have certain distance.
According to instruction of the present invention, those skilled in the art it is contemplated that other distortion execution mode, and only otherwise depart from essence of the present invention, they all fall into protection scope of the present invention.Protection scope of the present invention is limited by its claims.
Claims (9)
1. photovoltaic cell that be used for to receive circular light spot, described battery comprises cell piece and the main grid utmost point pattern for preparing at cell piece, wherein, described cell piece be shaped as circle or limit number more than or equal to five regular polygon, described main grid utmost point pattern forms along the periphery of cell piece.
2. photovoltaic cell according to claim 1, wherein, described cell piece be shaped as circle, described main grid utmost point pattern is the circular loop pattern that the periphery along the circular batteries sheet forms, the inside radius of described annulus equals the radius of described circular light spot.
3. photovoltaic cell according to claim 1, wherein, described cell piece has the regular hexagon shape, and described orthohexagonal inscribe radius of a circle equals the radius of circular light spot, and described main grid utmost point pattern is the pattern that is formed between orthohexagonal inscribed circle and the regular hexagon.
4. according to photovoltaic cell claimed in claim 1, wherein, described cell piece has the regular hexagon shape, and described orthohexagonal inscribe radius of a circle equals the radius of circular light spot, and described main grid utmost point pattern is the regular hexagon pattern along the periphery formation of cell piece.
5. the photovoltaic cell of stating according to claim 1, wherein, described cell piece has the regular hexagon shape, described orthohexagonal inscribe radius of a circle equals the radius of circular light spot, and described main grid utmost point pattern is along the regular hexagon pattern of the periphery formation of cell piece and the stack pattern of the pattern between orthohexagonal inscribed circle and regular hexagon.
6. the photovoltaic cell of stating according to claim 1, wherein, described cell piece has the regular hexagon shape, and described main grid utmost point pattern is the pattern that forms between circular and its outside regular hexagon corresponding to circular light spot.
7. the photovoltaic cell of stating according to claim 1, wherein, described cell piece has positive heptagon shape, and described main grid utmost point pattern is the pattern that forms at the periphery place of positive heptagon cell piece.
8 one kinds of methods for the preparation of the photovoltaic cell that receives circular light spot said method comprising the steps of:
At Grown battery functi on layer;
Utilize photoetching process, form inner grid level and main grid level pattern at the battery functi on layer; And
Shape according to main grid utmost point pattern cuts into independent cell piece with substrate;
Wherein, formed cell piece be shaped as circle or limit number more than or equal to five regular polygon, form described main grid utmost point pattern along the periphery of cell piece.
8. the method for preparing photovoltaic cell according to claim 8, wherein, formed cell piece be shaped as circle, described main grid utmost point pattern is the circular loop pattern that the periphery along the circular batteries sheet forms, the inside radius of described annulus equals the radius of described circular light spot.
9. the method for preparing photovoltaic cell according to claim 8, wherein, formed cell piece be shaped as regular hexagon or positive heptagon, described main grid utmost point pattern is the pattern that forms at the periphery place of regular hexagon or positive heptagon cell piece.
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| CN2012104044620A CN102945867A (en) | 2012-10-22 | 2012-10-22 | Photovoltaic cell for receiving circular light spots and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405903A (en) * | 2015-12-18 | 2016-03-16 | 四川钟顺太阳能开发有限公司 | Solar cell surface grid line structure suitable for high concentration |
| CN105428430A (en) * | 2015-12-18 | 2016-03-23 | 四川钟顺太阳能开发有限公司 | Multi-junction GaAs solar cell surface grid line structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4228315A (en) * | 1979-05-04 | 1980-10-14 | Rca Corporation | Solar cell grid patterns |
| JPH08162658A (en) * | 1994-12-06 | 1996-06-21 | Toyota Motor Corp | Solar cell |
| CN101119084A (en) * | 2006-08-03 | 2008-02-06 | 邓运明 | Solar energy light-collecting battery |
| CN101677114A (en) * | 2008-09-15 | 2010-03-24 | 朱忻 | Method for cutting photovoltaic wafer in light-collection photovoltaic system |
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2012
- 2012-10-22 CN CN2012104044620A patent/CN102945867A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4228315A (en) * | 1979-05-04 | 1980-10-14 | Rca Corporation | Solar cell grid patterns |
| JPH08162658A (en) * | 1994-12-06 | 1996-06-21 | Toyota Motor Corp | Solar cell |
| CN101119084A (en) * | 2006-08-03 | 2008-02-06 | 邓运明 | Solar energy light-collecting battery |
| CN101677114A (en) * | 2008-09-15 | 2010-03-24 | 朱忻 | Method for cutting photovoltaic wafer in light-collection photovoltaic system |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405903A (en) * | 2015-12-18 | 2016-03-16 | 四川钟顺太阳能开发有限公司 | Solar cell surface grid line structure suitable for high concentration |
| CN105428430A (en) * | 2015-12-18 | 2016-03-23 | 四川钟顺太阳能开发有限公司 | Multi-junction GaAs solar cell surface grid line structure |
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Application publication date: 20130227 |