CN103762258B - A kind of Efficient all back electrode type solar cell - Google Patents
A kind of Efficient all back electrode type solar cell Download PDFInfo
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- CN103762258B CN103762258B CN201410007622.7A CN201410007622A CN103762258B CN 103762258 B CN103762258 B CN 103762258B CN 201410007622 A CN201410007622 A CN 201410007622A CN 103762258 B CN103762258 B CN 103762258B
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- 238000009792 diffusion process Methods 0.000 claims abstract description 49
- 239000010410 layer Substances 0.000 claims description 69
- 239000011241 protective layer Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 241001424688 Enceliopsis Species 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 210000004027 cell Anatomy 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000001172 regenerating effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010913 used oil Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention relates to technical field of solar batteries, refer in particular to a kind of Efficient all back electrode type solar cell; Described solar cell comprises and is arranged on outer field solar panel, arranges the zigzag cascaded surface that long and short limit replaces, long limit is arranged PN junction diffusion layer and diffusion layer electrode, minor face arranges underlayer electrode bottom described solar panel; By arranging PN junction diffusion layer on jagged long limit, the contact area in P district and N district and the area of PN junction area can be made to increase as much as possible, in addition because underlayer electrode layer is arranged on short step surface, arrange minor face as far as possible vertical with solar panel surface, the sunray incided on solar panel is just almost irradiated on PN junction diffusion layer completely; This spline structure both can increase PN junction diffusion layer area, fully absorb sunray, can guarantee that again underlayer electrode layer has enough width thus improves energy output and the conversion efficiency of solar cell to greatest extent.
Description
Technical field
The present invention relates to technical field of solar batteries, refer in particular to a kind of Efficient all back electrode type solar cell.
Background technology
The energy is the basis of a national economy and social development, the fossil energies such as now widely used oil, natural gas, coal are faced with stern challenge, and development and utilization is cleaned, green, regenerative resource are the important leverage solving energy and environment contradiction, realize sustainable development.
Among all regenerative resources, no matter from the generality of the quantity of resource, distribution, or from the reliable maturity of spatter property, technology, solar energy all has larger superiority, photovoltaic generation has become the primary manner of renewable energy utilization, and crystal silicon solar batteries is always in occupation of the lion's share of photovoltaic market.The same with other regenerative resource, the maximum restraining factors that solar cell photovoltaic generating is promoted remain cost of electricity-generating, and therefore, improve the conversion efficiency of solar cell, be the heat subject of scientific research always.
What the crystal silicon solar batteries of current occuping market main flow still adopted is double-face electrode manufacturing process, its advantage is that manufacturing process is simple, shortcoming is also apparent, due to the part sensitive surface of solar battery front side stop by electrode, decrease the effective area of solar cell, thus reduce energy output and the conversion efficiency of solar cell.
In order to address this problem, people have invented all back-contact electrodes solar cell (as shown in Figure 1), this is a kind of manufacturing process positive pole and negative pole being all integrated in rear surface of solar cell, adopt the solar cell of this manufacturing process, because the sensitive surface in its front is not by electrode obstructs, sunlight can irradiate into solar cell surface completely, thus greatly increases the conversion efficiency of solar cell.Because this manufacturing process needs the PN junction diffusion layer 2 carrying out P or N-type diffusion at rear surface of solar cell selectively, and will form the PN junction diffusion layer electrode 5(of P electrode or N electrode selectively to realize effective contact on corresponding PN junction diffusion layer 2, some also needs to form corresponding P+ or N+ layer); Underlayer electrode layer 3 is that the back side forms the underlayer electrode 6(of N electrode or P electrode formation to realize effective contact, and some also needs to form corresponding N+ or P+ layer).Form PN junction diffusion layer 2 and underlayer electrode layer 3 alternately appearance.
For N-type substrate all back-contact electrodes solar panel, PN junction could be formed with N-type substrate owing to only having the p type diffused layer at its back side (PN junction diffusion layer), realize photovoltaic generation, therefore, wish that the area that p type diffused layer occupies is the bigger the better, but in order to solar cell electricity power be guided to greatest extent, the electrode layer above the N-type substrate at the back side and p type diffused layer must be alternately arranged, and N-type substrate electrode layer must have enough width simultaneously; Like this, in fact just decrease the effective area of solar cell, reduce energy output and the conversion efficiency of solar cell to a certain extent.
Summary of the invention
A kind of Efficient all back electrode type solar cell; described solar cell comprises and is arranged on outer field solar panel; the zigzag cascaded surface that long and short limit replaces is set bottom described solar panel; long limit is arranged PN junction diffusion layer and diffusion layer electrode; minor face forms underlayer electrode; also arrange protective layer bottom PN junction diffusion layer, the protective layer below long limit, minor face arranges diffusion layer electrode and underlayer electrode outward respectively.
Preferably, described minor face is vertical with solar panel surface is arranged.
Preferably, described solar panel is N-type substrate solar panel, and described PN junction diffusion layer is p type diffused layer, and described diffusion layer electrode is P-type electrode, and described underlayer electrode is N-type electrode.
Preferably, described solar panel is P type substrate solar panel, and described PN junction diffusion layer is n type diffused layer, and described diffusion layer electrode is N-type electrode, and described underlayer electrode is P-type electrode.
Beneficial effect of the present invention is, a kind of Efficient all back electrode type solar cell, described solar cell comprises and is arranged on outer field solar panel, the zigzag cascaded surface that long and short limit replaces is set bottom described solar panel, long limit is arranged PN junction diffusion layer, minor face forms underlayer electrode, also arranges protective layer bottom electrode diffusion layer, the protective layer below long limit, minor face arranges PN junction diffusion layer electrode, underlayer electrode outward respectively, by arranging PN junction diffusion layer on jagged long limit, the contact area in P district and N district and the area of PN junction area can be made to increase as much as possible, in addition because underlayer electrode layer is arranged on short step surface, can arrange surperficial vertical as far as possible to minor face and solar panel, like this, the sunray incided on solar panel is just almost irradiated on PN junction diffusion layer completely, therefore, such structure both can increase the area of PN junction diffusion layer, abundant absorption sunray, can guarantee that again underlayer electrode layer has enough width, effectively solar panel electricity power is guided, thus improve energy output and the conversion efficiency of solar cell to greatest extent.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of prior art back electrode solar cell
Fig. 2 is the schematic diagram of the efficient back electrode solar cell of the present invention
Embodiment
Below in conjunction with accompanying drawing 2, the present invention is further elaborated:
A kind of Efficient all back electrode type solar cell; described solar cell comprises and is arranged on outer field solar panel 1; the zigzag cascaded surface that long and short limit 11,12 replaces is set bottom described solar panel 1; long limit 11 arranges PN junction diffusion layer 2; minor face 12 is formed underlayer electrode layer 3; also arrange protective layer 4 bottom PN junction diffusion layer 2, the protective layer 4 below long limit 11, minor face 12 is outer arranges PN junction diffusion layer electrode 5, underlayer electrode 6 respectively.
In order to increase the illuminating area of PN junction diffusion layer 2, reduce underlayer electrode to the absorption of incident sunray, minor face 12 and solar panel 1 surface is vertical to be arranged, and the light that front illuminated is come can be irradiated to PN junction diffusion layer 2 substantially completely, and not absorb by underlayer electrode 3.
When solar panel 1 is N-type substrate solar panel 1, described PN junction diffusion layer 2 is p type diffused layer, and described diffusion layer electrode 5 is P-type electrode, and described underlayer electrode 6 is N-type electrode.
When solar panel 1 is P type solar panel 1, described PN junction diffusion layer 2 is n type diffused layer, and described diffusion layer electrode 5 is N-type electrode, and described underlayer electrode 6 is P-type electrode.
The roughly production technology of Efficient all back electrode type solar cell of the present invention is, by carving the methods such as food to the back side of solar panel 1 be processed into zigzag step surface by mechanical lapping, chemical corrosion, ion, utilize the lithographic fabrication processes similar with semiconductor integrated circuit, PN junction diffusion layer 2 is defined by methods such as thermal diffusions selectively on long limit 11, then, the protective layer 4 of one deck oxide, nitride etc. is formed at the back side of solar panel 1; Finally, the protective layer 4 below the long limit 11 of zigzag, minor face 12 is outer arranges PN junction diffusion layer electrode 5, underlayer electrode 6 respectively, and diffusion layer electrode 5, underlayer electrode 6 are connected to PN junction diffusion layer 2, substrate opening district 3.Contacting with the effective of P layer with N layer to improve electrode, by methods such as ion implantations, N+ layer can be set between N layer and N-type electrode, P+ layer is set between P layer and P-type electrode.
The present invention is by arranging PN junction diffusion layer on jagged long limit, the contact area in P district and N district and the area of PN junction area can be made to increase as much as possible, in addition because underlayer electrode layer is arranged on short step surface, and minor face is vertical with solar panel surface, like this, the sunray incided on solar panel is just almost irradiated on PN junction diffusion layer completely, therefore, such structure both can increase the area of PN junction diffusion layer, abundant absorption sunray, can guarantee that again underlayer electrode layer has enough width, effectively solar panel electricity power is guided, thus improve energy output and the conversion efficiency of solar cell to greatest extent.
The above embodiment, just preferred embodiments of the present invention, be not limit the scope of the present invention, therefore all equivalences done according to structure, feature and the principle described in the present patent application the scope of the claims change or modify, and all should be included in patent claim of the present invention.
Claims (4)
1. an Efficient all back electrode type solar cell, it is characterized in that: described solar cell comprises and is arranged on outer field solar panel (1), described solar panel (1) bottom arranges length, minor face (11, 12) the zigzag cascaded surface replaced, long limit (11) is arranged PN junction diffusion layer (2), minor face (12) is upper forms underlayer electrode layer (3), PN junction diffusion layer (2) bottom also arranges protective layer (4), long limit (11), the protective layer (4) of minor face (12) below arranges PN junction diffusion layer electrode (5) outward respectively, underlayer electrode (6).
2. a kind of Efficient all back electrode type solar cell according to claim 1, is characterized in that: described minor face (12) is vertical with solar panel (1) surface to be arranged.
3. a kind of Efficient all back electrode type solar cell according to claim 1, it is characterized in that: described solar panel (1) is N-type substrate solar panel, described PN junction diffusion layer (2) is p type diffused layer, described diffusion layer electrode (5) is P-type electrode, and described underlayer electrode (6) is N-type electrode.
4. a kind of Efficient all back electrode type solar cell according to claim 1, it is characterized in that: described solar panel (1) is P type substrate solar panel, described PN junction diffusion layer (2) is n type diffused layer, described diffusion layer electrode (5) is N-type electrode, and described underlayer electrode (6) is P-type electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410007622.7A CN103762258B (en) | 2014-01-07 | 2014-01-07 | A kind of Efficient all back electrode type solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410007622.7A CN103762258B (en) | 2014-01-07 | 2014-01-07 | A kind of Efficient all back electrode type solar cell |
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| Publication Number | Publication Date |
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| CN103762258A CN103762258A (en) | 2014-04-30 |
| CN103762258B true CN103762258B (en) | 2016-04-06 |
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| CN201410007622.7A Expired - Fee Related CN103762258B (en) | 2014-01-07 | 2014-01-07 | A kind of Efficient all back electrode type solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105576043B (en) * | 2016-03-08 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | diode and forming method thereof |
| CN109192816B (en) * | 2018-09-04 | 2019-11-29 | 苏州元联科技创业园管理有限公司 | The manufacturing method and solar battery of solar battery |
| CN109216480B (en) * | 2018-09-04 | 2019-11-29 | 苏州元联科技创业园管理有限公司 | A kind of p type single crystal silicon battery and its manufacturing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709386A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Method for preparing full back electrode solar battery |
| WO2013003282A2 (en) * | 2011-06-28 | 2013-01-03 | Varian Semiconductor Equipment Associates, Inc. | Use of a shadow mask and a soft mask for aligned implants in solar cells |
| CN103022264A (en) * | 2013-01-08 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Process for simultaneously forming front surface field and rear surface field of n-shaped battery with full-back electrode |
| CN103367547A (en) * | 2013-07-16 | 2013-10-23 | 苏州润阳光伏科技有限公司 | Full-back-electrode solar cell and method for manufacturing full-back-electrode solar cell |
| US8574951B1 (en) * | 2013-02-20 | 2013-11-05 | National Tsing Hua University | Process of manufacturing an interdigitated back-contact solar cell |
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2014
- 2014-01-07 CN CN201410007622.7A patent/CN103762258B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013003282A2 (en) * | 2011-06-28 | 2013-01-03 | Varian Semiconductor Equipment Associates, Inc. | Use of a shadow mask and a soft mask for aligned implants in solar cells |
| CN102709386A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Method for preparing full back electrode solar battery |
| CN103022264A (en) * | 2013-01-08 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Process for simultaneously forming front surface field and rear surface field of n-shaped battery with full-back electrode |
| US8574951B1 (en) * | 2013-02-20 | 2013-11-05 | National Tsing Hua University | Process of manufacturing an interdigitated back-contact solar cell |
| CN103367547A (en) * | 2013-07-16 | 2013-10-23 | 苏州润阳光伏科技有限公司 | Full-back-electrode solar cell and method for manufacturing full-back-electrode solar cell |
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