CN203482116U - Light-concentrating semiconductor thermoelectric power generation apparatus - Google Patents

Light-concentrating semiconductor thermoelectric power generation apparatus Download PDF

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Publication number
CN203482116U
CN203482116U CN201320634830.0U CN201320634830U CN203482116U CN 203482116 U CN203482116 U CN 203482116U CN 201320634830 U CN201320634830 U CN 201320634830U CN 203482116 U CN203482116 U CN 203482116U
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CN
China
Prior art keywords
heat collector
heat
power generation
thermoelectric power
semiconductor thermoelectric
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Expired - Fee Related
Application number
CN201320634830.0U
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Chinese (zh)
Inventor
季旭
谭礼军
李明
罗熙
冷从斌
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Yunnan Normal University
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Yunnan Normal University
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Priority to CN201320634830.0U priority Critical patent/CN203482116U/en
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Publication of CN203482116U publication Critical patent/CN203482116U/en
Anticipated expiration legal-status Critical
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Abstract

The utility model discloses a light-concentrating semiconductor thermoelectric power generation apparatus, comprising a Fresnel condenser, a convex lens, a heat collector, a semiconductor thermoelectric power generation sheet, a thermal insulation material, heat dissipation sheets, an apparatus shell and a fixing device. The solar light focuses on a collector installed at a focal spot by the Fresnel condenser and the convex lens. The heat collector is mounted above the semiconductor thermoelectric power generation sheet; the heat dissipation sheets are disposed below the semiconductor thermoelectric power generation sheet; the convex lens is fixed on the fixing device; and the Fresnel condenser, the fixing device and the heat collector are mounted on the apparatus shell. The light-concentrating semiconductor thermoelectric power generation apparatus can more effectively increase a hot end temperature by adopting two light-concentrating manners of the Fresnel condenser and the convex lens. The hot end temperature can be further increased by combining the heat collector provided with a concave-convex surface capable of increasing contact area of the semiconductor thermoelectric power generation sheet and the heat collector with the semiconductor thermoelectric power generation sheet. Besides, the light-concentrating device is simple in structure, high in power generation efficiency, low in cost, convenient for installation and application and suitable for small power electric appliance.

Description

A kind of optically focused semiconductor thermo-electric generation apparatus
Technical field
The utility model relates to a kind of optically focused semiconductor thermo-electric generation apparatus, belongs to solar energy heat utilization field.
Background technology
Solar energy is a kind of reproducible clean energy resource, has generality, utilizes at present the mode of solar power generation to mainly contain photovoltaic generation and concentration photo-thermal generating.Semiconductor temperature differential generating, mainly by formation hot junction, semiconductor temperature differential generating sheet two ends and cold junction utilizing Sai Beier effect principle to make, causes the temperature difference to produce electromotive force generating, and the larger energy output of the temperature difference is more.Optically focused can, so that the sunlight disperseing is gathered together, form a zonule that temperature is higher.
Photovoltaic generation, due to the impact of photovoltaic cell, has the defects such as system effectiveness is low, cost is high, and installation is complicated, land area is large.Concentration photo-thermal generating needs larger area concentrator, so that complexity is installed, and land area is wide, high in cost of production defect.Semiconductor temperature differential generating hot-side temperature source is not high, causes the temperature difference relatively little, and energy output is less; Or take to be arranged on the heat collector with heat reservoir, so that system complex, cost improves.
Summary of the invention
The technical problem of the required solution of the utility model is the defect existing for prior art, proposes a kind ofly have high power concentrator, simple in structure, generating efficiency is high, cost is low, be convenient to install and the optically focused semiconductor thermo-electric generation apparatus of application.
The utility model solves the technical scheme that its technical problem adopts:
A kind of optically focused semiconductor thermo-electric generation apparatus, comprise Fresnel condenser, convex lens, heat collector, semiconductor temperature differential generating sheet, heat-insulating heat-preserving material, fin, crust of the device, fixture, sunlight converges at the heat collector that is arranged on its focal spot place by Fresnel condenser, convex lens, heat collector is arranged on semiconductor temperature differential generating sheet top, fin is installed in semiconductor temperature differential generating sheet below, convex lens are fixed in fixture, and Fresnel condenser, fixture, heat collector are fixedly mounted on crust of the device.
Described heat collector below is set to adopt the male and fomale(M&F) that increases semiconductor temperature differential generating sheet and heat collector contact area.
Described heat-insulating heat-preserving material is between heat collector and crust of the device, and length just covers outstanding heat collector.
Described crust of the device bottom is connected with heat-insulating heat-preserving material.
Sunlight is undertaken after an optically focused by Fresnel condenser, in order to reclaim the sunlight of diffusion, again pass through convex lens optically focused, heat collector is arranged on convex lens optically focused focal spot place, the hot junction of semiconductor temperature differential generating sheet is the heat collector that is set to the male and fomale(M&F) of increase semiconductor temperature differential generating sheet and heat collector contact area, cold junction is mounted in the fin of its below, heat-insulating heat-preserving material is arranged between heat collector and crust of the device for preventing that thereby the heat of heat collector from passing to crust of the device loses heat, crust of the device bottom is connected with heat-insulating heat-preserving material, and be not connected with fin for better heat radiation, increase the temperature difference.
The beneficial effects of the utility model are: proposed a kind of optically focused semiconductor thermo-electric generation apparatus, adopted Fresnel condenser and two kinds of optically focused modes of convex lens more can effectively improve prefocus stream, promoted semiconductor temperature differential generating sheet hot-side temperature; Employing is provided with increase semiconductor temperature differential generating sheet and is combined and more can increases hot-side temperature with semiconductor thermoelectric generating sheet with the heat collector of the male and fomale(M&F) of heat collector contact area, and simple in structure, generating efficiency is high, cost is low, be convenient to install and application, is applicable to low power electric appliance etc.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of optically focused semiconductor thermo-electric generation apparatus.
1. Fresnel condensers in figure, 2. convex lens, 3. heat collector, 4. semiconductor temperature differential generating sheet, 5. heat-insulating heat-preserving material, 6. fin, 7. crust of the device, 8. sunlight, 9. fixture.
Embodiment
As shown in Figure 1, a kind of optically focused semiconductor thermo-electric generation apparatus, comprise Fresnel condenser (1), convex lens (2), heat collector (3), semiconductor temperature differential generating sheet (4), heat-insulating heat-preserving material (5), fin (6), crust of the device (7), fixture (8), sunlight converges at the heat collector (3) that is arranged on its focal spot place by Fresnel condenser (1), convex lens (2), heat collector (3) is arranged on semiconductor temperature differential generating sheet (4)
Top, fin (6) is installed in semiconductor temperature differential generating sheet (4) below, and it is upper that convex lens (2) are fixed on fixture (9), and Fresnel condenser (1), fixture (9), heat collector (3) are fixedly mounted on crust of the device (7).
Described heat collector (3) below is set to adopt the male and fomale(M&F) that increases semiconductor temperature differential generating sheet (4) and heat collector (3) contact area.
Described heat-insulating heat-preserving material (5) is between heat collector (3) and crust of the device (7), and length just covers outstanding heat collector (3).
Described crust of the device (7) bottom is connected with heat-insulating heat-preserving material (5).
Sunlight is undertaken after an optically focused by Fresnel condenser (1), in order to reclaim the sunlight of diffusion, again pass through convex lens (2) optically focused, heat collector (3) is arranged on convex lens (2) optically focused focal spot place, the hot junction of semiconductor temperature differential generating sheet (4) is the heat collector (3) that is set to the male and fomale(M&F) of increase semiconductor temperature differential generating sheet (4) and heat collector (3) contact area, cold junction is mounted in the fin (6) of its below, heat-insulating heat-preserving material (5) is arranged between heat collector (3) and crust of the device (7) for preventing that the heat of heat collector (3) from passing to crust of the device (7) thereby loses heat, crust of the device (7) bottom is connected with heat-insulating heat-preserving material (5), and be not connected with fin (6), be for better heat radiation, increase the temperature difference.

Claims (4)

1. an optically focused semiconductor thermo-electric generation apparatus, it is characterized in that: comprise Fresnel condenser (1), convex lens (2), heat collector (3), semiconductor temperature differential generating sheet (4), heat-insulating heat-preserving material (5), fin (6), crust of the device (7), fixture (8), sunlight is by Fresnel condenser (1), convex lens (2) converge at the heat collector (3) that is arranged on its focal spot place, heat collector (3) is arranged on semiconductor temperature differential generating sheet (4) top, fin (6) is installed in semiconductor temperature differential generating sheet (4) below, convex lens (2) are fixed in fixture (9), Fresnel condenser (1), fixture (9), heat collector (3) is fixedly mounted on crust of the device (7).
2. a kind of optically focused semiconductor thermo-electric generation apparatus according to claim 1, is characterized in that: described heat collector (3) below is set to adopt the male and fomale(M&F) that increases semiconductor temperature differential generating sheet (4) and heat collector (3) contact area.
3. a kind of optically focused semiconductor thermo-electric generation apparatus according to claim 1, is characterized in that: described heat-insulating heat-preserving material (5) is between heat collector (3) and crust of the device (7), and length just covers outstanding heat collector (3).
4. according to a kind of optically focused semiconductor thermo-electric generation apparatus described in claim 1 or 3, it is characterized in that: described crust of the device (7) bottom is connected with heat-insulating heat-preserving material (5).
CN201320634830.0U 2013-10-15 2013-10-15 Light-concentrating semiconductor thermoelectric power generation apparatus Expired - Fee Related CN203482116U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320634830.0U CN203482116U (en) 2013-10-15 2013-10-15 Light-concentrating semiconductor thermoelectric power generation apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320634830.0U CN203482116U (en) 2013-10-15 2013-10-15 Light-concentrating semiconductor thermoelectric power generation apparatus

Publications (1)

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CN203482116U true CN203482116U (en) 2014-03-12

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105529956A (en) * 2016-01-19 2016-04-27 河南鸿昌电子有限公司 Semiconductor power generation device
CN111006404A (en) * 2019-12-18 2020-04-14 牡丹江师范学院 Photovoltaic thermoelectric power generation device that cooling effect is good
CN113900459A (en) * 2021-10-28 2022-01-07 南京机电职业技术学院 High power light-gathering flash burning device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105529956A (en) * 2016-01-19 2016-04-27 河南鸿昌电子有限公司 Semiconductor power generation device
CN111006404A (en) * 2019-12-18 2020-04-14 牡丹江师范学院 Photovoltaic thermoelectric power generation device that cooling effect is good
CN111006404B (en) * 2019-12-18 2021-02-19 牡丹江师范学院 Photovoltaic thermoelectric power generation device that cooling effect is good
CN113900459A (en) * 2021-10-28 2022-01-07 南京机电职业技术学院 High power light-gathering flash burning device
CN113900459B (en) * 2021-10-28 2023-08-25 南京机电职业技术学院 High-power light-focusing flash-burning device

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Granted publication date: 20140312

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