CN105427894A - DDR (double data Rate) rapid measurement method - Google Patents
DDR (double data Rate) rapid measurement method Download PDFInfo
- Publication number
- CN105427894A CN105427894A CN201510756168.XA CN201510756168A CN105427894A CN 105427894 A CN105427894 A CN 105427894A CN 201510756168 A CN201510756168 A CN 201510756168A CN 105427894 A CN105427894 A CN 105427894A
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- ddr
- internal memory
- test
- memory
- power supply
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- 238000000691 measurement method Methods 0.000 title abstract 2
- 230000015654 memory Effects 0.000 claims abstract description 60
- 238000012360 testing method Methods 0.000 claims abstract description 57
- 239000000178 monomer Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 16
- 101100498818 Arabidopsis thaliana DDR4 gene Proteins 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011889 copper foil Substances 0.000 claims description 3
- 235000013809 polyvinylpolypyrrolidone Nutrition 0.000 claims description 3
- 229920000523 polyvinylpolypyrrolidone Polymers 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 abstract description 15
- 230000006378 damage Effects 0.000 abstract description 11
- 230000006870 function Effects 0.000 abstract description 2
- 238000001310 location test Methods 0.000 abstract 1
- 238000013461 design Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- LAXBNTIAOJWAOP-UHFFFAOYSA-N 2-chlorobiphenyl Chemical compound ClC1=CC=CC=C1C1=CC=CC=C1 LAXBNTIAOJWAOP-UHFFFAOYSA-N 0.000 description 1
- 101710149812 Pyruvate carboxylase 1 Proteins 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
Landscapes
- Tests Of Electronic Circuits (AREA)
Abstract
The invention discloses a DDR fast measurement method, a DDR memory is firstly subjected to a relevant impedance test before being loaded on a system platform, the quality of a memory monomer is checked through a test tool, and the good memory is loaded on a board for testing according to the test result of the test tool. The invention utilizes the function of the test tool to rapidly check whether the memory is good or bad in the early stage of the test, and instruments can be checked before the memory is loaded on a system, thereby avoiding the damage of the mainboard; protecting the damage of the mainboard caused by abnormal memory; and an external test point location test is added, so that the risk of direct memory test is reduced.
Description
Technical field
The present invention relates to computer memory technical field, be specifically related to a kind of DDR method for fast measuring.
Background technology
General server circuit board all can use a large amount of internal memories, then the test present stage for internal memory is all confined to directly go up electrical testing, but do not get rid of the reason of other board due to mechanism, Power Management Design, space etc., cause unnecessary damage, neither one, for the investigation equipment of internal memory DDR4 power source situation, impedance conditions between power supply and power supply over the ground, increases the risk that system causes due to abnormal internal memory.
When being engaged in the design of server; we can find that the power supply that internal memory needs to use is a lot; no matter be design and the protection in later stage in early stage; usually we can add corresponding feed circuit in the process of design; that internal memory can normally can work when multiple power supplies; but on internal memory, a road power supply earth impedance changes and can produce, and can cause damage under blinded conditions to board.Once upper electrical anomaly occurs our server master board, no matter be because the error in design, manual operation or other fortuitous event all likely cause very large injury to circuit board.
Summary of the invention
The technical problem to be solved in the present invention is: in order to solve the problem, and provides a kind of DDR method for fast measuring.
The technical solution adopted in the present invention is:
A kind of DDR method for fast measuring, before there is upper system platform in DDR, first do once relevant testing impedance, the quality of internal memory monomer is checked by testing tool, according to the result of testing tool test, by board test on good internal memory, what minimizing mainboard caused because of memory abnormal burns phenomenon, and this is fatal for server, if use testing apparatus to carry out to memory part the equipment that preliminary detection judges quality, reduce the mainboard damage because memory abnormal causes, and then minimizing causes to board the possible situation burnt out, the impedance conditions between each power supply of internal memory monomer and ground is detected by this testing apparatus before internal memory uses, the desired value exceeding regulation when impedance thinks to there is monomer extremely, abnormal internal memory monomer is placed separately as abnormal article process, so just can reduce the damage of memory abnormal to mainboard, realize the measure of protection.
The testing tool that described method relates to, its structure comprises PCB, DDR socket, described circuit board is provided with memory test point position, comprising: the test point position of power supply PVPP, power supply PVTT, power supply PVDDQ and GND; Tested by multimeter and put position accordingly, just can judge power supply point and the earth impedance situation of internal memory.If when power panel has the place of short circuit due to uncertain factor, can, by concrete the testing out of instrument, make abnormal monomer internal memory in earlier stage investigate out.
The through-current capacity of the Copper Foil of described testing tool PCB layout meets the requirement of size of current, and the internal memory contact DIMM of use meets specification in industry, makes the numerical value measured close to internal memory body numerical value.
Test point position on described testing tool comprises: VrefCA, 12V, VSS, VDD, Vtt, Vpp, VDDSPD.
Described DDR internal memory comprises DDR3 internal memory and DDR4 internal memory.
Beneficial effect of the present invention is:
The present invention utilizes the function of testing tool, and whether the phase to investigate internal memory fast fine or not before testing, can instrument investigation before system on internal memory, avoids the damage causing mainboard; The damage that protection mainboard causes because of abnormal internal memory; Increase outer test points bit test, reduce directly in the risk of memory test.
Accompanying drawing explanation
Fig. 1 is testing tool structural representation of the present invention.
Embodiment
Below according to Figure of description, in conjunction with embodiment, the present invention is further described:
Embodiment 1:
A kind of DDR method for fast measuring, before there is upper system platform in DDR, first do once relevant testing impedance, the quality of internal memory monomer is checked by testing tool, according to the result of testing tool test, by board test on good internal memory, what minimizing mainboard caused because of memory abnormal burns phenomenon, and this is fatal for server, if use testing apparatus to carry out to memory part the equipment that preliminary detection judges quality, reduce the mainboard damage because memory abnormal causes, and then minimizing causes to board the possible situation burnt out, the impedance conditions between each power supply of internal memory monomer and ground is detected by this testing apparatus before internal memory uses, the desired value exceeding regulation when impedance thinks to there is monomer extremely, abnormal internal memory monomer is placed separately as abnormal article process, so just can reduce the damage of memory abnormal to mainboard, realize the measure of protection.
Embodiment 2:
As shown in Figure 1, on the basis of embodiment 1, the testing tool that described in the present embodiment, method relates to, its structure comprises PCB 1, DDR socket 2, described circuit board is provided with memory test point position, comprising: the test point position of power supply PVPP, power supply PVTT, power supply PVDDQ and GND; Tested by multimeter and put position accordingly, just can judge power supply point and the earth impedance situation of internal memory.If when power panel has the place of short circuit due to uncertain factor, can, by concrete the testing out of instrument, make abnormal monomer internal memory in earlier stage investigate out.
Embodiment 3:
On the basis of embodiment 2, described in the present embodiment, the through-current capacity of the Copper Foil of testing tool PCB layout meets the requirement of size of current, and the internal memory contact DIMM of use meets specification in industry, makes the numerical value measured close to internal memory body numerical value.
Embodiment 4:
On the basis of embodiment 2 or 3, the test point position on testing tool described in the present embodiment comprises: VrefCA, 12V, VSS, VDD, Vtt, Vpp, VDDSPD.
Embodiment 5:
On the basis of embodiment 4, DDR internal memory described in the present embodiment comprises DDR3 internal memory and DDR4 internal memory.
Above embodiment is only for illustration of the present invention; and be not limitation of the present invention; the those of ordinary skill of relevant technical field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all equivalent technical schemes also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (5)
1. a DDR method for fast measuring, is characterized in that: before there is upper system platform in DDR, first do once relevant testing impedance, checked the quality of internal memory monomer by testing tool, according to the result of testing tool test, by board test on good internal memory.
2. a kind of DDR method for fast measuring according to claim 1, it is characterized in that: the testing tool that described method relates to, its structure comprises PCB, DDR socket, described circuit board is provided with memory test point position, comprising: the test point position of power supply PVPP, power supply PVTT, power supply PVDDQ and GND; Putting position accordingly by testing, judging power supply point and the earth impedance situation of internal memory.
3. a kind of DDR method for fast measuring according to claim 2, is characterized in that: the through-current capacity of the Copper Foil of described testing tool PCB layout meets the requirement of size of current, and the internal memory contact DIMM of use meets specification in industry.
4. a kind of DDR method for fast measuring according to Claims 2 or 3, is characterized in that: the test point position on described testing tool comprises: VrefCA, 12V, VSS, VDD, Vtt, Vpp, VDDSPD.
5. a kind of DDR method for fast measuring according to claim 4, is characterized in that: described DDR internal memory comprises DDR3 internal memory and DDR4 internal memory.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510756168.XA CN105427894A (en) | 2015-11-09 | 2015-11-09 | DDR (double data Rate) rapid measurement method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510756168.XA CN105427894A (en) | 2015-11-09 | 2015-11-09 | DDR (double data Rate) rapid measurement method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105427894A true CN105427894A (en) | 2016-03-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510756168.XA Pending CN105427894A (en) | 2015-11-09 | 2015-11-09 | DDR (double data Rate) rapid measurement method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106294054A (en) * | 2016-08-02 | 2017-01-04 | 浪潮电子信息产业股份有限公司 | A kind of internal memory noise measuring method and system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035301A (en) * | 2011-10-06 | 2013-04-10 | 鸿富锦精密工业（深圳）有限公司 | Testing method and testing device for parameters of memory bar |
| CN103700407A (en) * | 2013-12-14 | 2014-04-02 | 中国航空工业集团公司第六三一研究所 | Aviation application-based verification method for domestic storages |
| CN204102578U (en) * | 2014-10-30 | 2015-01-14 | 苏州科达科技股份有限公司 | The DDR particle signal measurement jig of embedded board |
| US20150035541A1 (en) * | 2013-07-30 | 2015-02-05 | Fih (Hong Kong) Limited | Signal integrity test apparatus and method for testing signal integrity of electronic product |
| CN104572385A (en) * | 2014-12-29 | 2015-04-29 | 北京中星微电子有限公司 | System and method for detecting memory faults |
-
2015
- 2015-11-09 CN CN201510756168.XA patent/CN105427894A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035301A (en) * | 2011-10-06 | 2013-04-10 | 鸿富锦精密工业（深圳）有限公司 | Testing method and testing device for parameters of memory bar |
| US20150035541A1 (en) * | 2013-07-30 | 2015-02-05 | Fih (Hong Kong) Limited | Signal integrity test apparatus and method for testing signal integrity of electronic product |
| CN103700407A (en) * | 2013-12-14 | 2014-04-02 | 中国航空工业集团公司第六三一研究所 | Aviation application-based verification method for domestic storages |
| CN204102578U (en) * | 2014-10-30 | 2015-01-14 | 苏州科达科技股份有限公司 | The DDR particle signal measurement jig of embedded board |
| CN104572385A (en) * | 2014-12-29 | 2015-04-29 | 北京中星微电子有限公司 | System and method for detecting memory faults |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106294054A (en) * | 2016-08-02 | 2017-01-04 | 浪潮电子信息产业股份有限公司 | A kind of internal memory noise measuring method and system |
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Application publication date: 20160323 |
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