CN105405870A - 一种快速软恢复二极管的制作方法 - Google Patents

一种快速软恢复二极管的制作方法 Download PDF

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CN105405870A
CN105405870A CN201510876085.4A CN201510876085A CN105405870A CN 105405870 A CN105405870 A CN 105405870A CN 201510876085 A CN201510876085 A CN 201510876085A CN 105405870 A CN105405870 A CN 105405870A
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injecting
recovery diode
substrate
buffering area
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陈利
徐承福
高耿辉
姜帆
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DALIAN LIANSHUN ELECTRONICS CO LTD
Xiamen Yuanshun Microelectronics Technology Co ltd
Unisonic Technologies Co Ltd
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DALIAN LIANSHUN ELECTRONICS CO LTD
Xiamen Yuanshun Microelectronics Technology Co ltd
Unisonic Technologies Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609Diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/868PIN diodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

本发明公开一种快速软恢复二极管的制作方法,包括以下步骤:S01:提供一衬底;S02:在所述衬底上区域注入B,形成p+缓冲区;S03:在所述p+缓冲区上外延n缓冲区,并进行热扩散;S04:在所述n缓冲区上外延n-漂移区;S05:在所述n-漂移区上注入B,并扩散形成p基区;S06:在所述p基区上注入B,并扩散形成阳极p+区。本发明在阴极侧隐埋的p+缓冲区,在反向恢复期间可以向n-漂移区注入少数载流子空穴,降低nn+结处的电场强度,改善反向恢复软度,并提高了抗反向恢复动态雪崩能力。

Description

一种快速软恢复二极管的制作方法
技术领域
本发明涉及一种快速软恢复二极管的制作方法。
背景技术
快恢复二极管(简称FRD)是一种具有开关特性好、反向恢复时间短特点的半导体二极管,主要应用于开关电源、PWM脉宽调制器、变频器等电子电路中,作为高频整流二极管、续流二极管或阻尼二极管使用。
快恢复二极管的内部结构与普通PN结二极管不同,它属于PIN结型二极管,即在P型硅材料与N型硅材料中间增加了基区I,构成PIN硅片。因基区很薄,反向恢复电荷很小,所以快恢复二极管的反向恢复时间较短,正向压降较低,反向击穿电压(耐压值)较高。
快速软恢复二极管是PIN型的双极器件,当其处于正向导通状态,即阳极相对于阴极加正电压时,其阳极和阴极分别向n-区注入空穴和电子,由于n-区的掺杂浓度很低,注入到n-区的空穴浓度远远大于n-区衬底的掺杂浓度,n-区产生强烈的电导调制效应,电导率大大提高,使得快速软恢复二极管的通态压降维持在较低的水平。
发明内容
本发明为解决上述问题,提供了一种快速软恢复二极管的制作方法。
为实现上述目的,本发明采用的技术方案为:
一种快速软恢复二极管的制作方法,包括以下步骤:
S01:提供一衬底;
S02:在所述衬底上区域注入B,形成p+缓冲区(2);
S03:在所述p+缓冲区(2)上外延n缓冲区(3),并进行热扩散;
S04:在所述n缓冲区(3)上外延n-漂移区(4);
S05:在所述n-漂移区(4)上注入B,并扩散形成p基区(5);
S06:在所述p基区(5)上注入B,并扩散形成阳极p+区(6)。
优选的,所述衬底为硅衬底。
优选的,所述步骤S02中,注入B剂量为1e13,能量为160kev。
优选的,所述步骤S05中,注入B剂量为3e13,能量为60kev。
优选的,所述步骤S06中,注入B剂量为1e15,能量为60kev。
本发明的有益效果是:
本发明在n缓冲区和阴极n+区之间引入p+缓冲区,该结构阴极隐埋p+缓冲区形成两个背靠背的pn结,而对于n+n结可以将其等效为电阻,故其阴极等效电路为两个背靠背pn结与电阻的并联;该结构在阴极侧隐埋的p+缓冲区,在反向恢复期间可以向n-漂移区注入少数载流子空穴,降低nn+结处的电场强度,改善反向恢复软度,降低反向恢复峰值功耗,并提高了抗反向恢复动态动态雪崩能力。
附图说明
此处所说明的附图用来提供对本发明的进一步理解,构成本发明的一部分,本发明的示意性实施例及其说明用于解释本发明,并不构成对本发明的不当限定。在附图中:
图1为本发明制作流程图;
图2为本发明结构示意图;
图示说明:阴极n+区-1;p+缓冲区-2;n缓冲区-3;n-漂移区-4;p基区-5;阳极p+区-6。
具体实施方式
为了使本发明所要解决的技术问题、技术方案及有益效果更加清楚、明白,以下结合附图和实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本发明,并不用于限定本发明。
如图1和图2所示,本发明提供一种快速软恢复二极管的制作方法,包括以下步骤:
S01:提供一衬底,即阴极n+区(1);
S02:在所述衬底上区域注入B,形成p+缓冲区(2);
S03:在所述p+缓冲区(2)上外延n缓冲区(3),并进行热扩散;
S04:在所述n缓冲区(3)上外延n-漂移区(4);
S05:在所述n-漂移区(4)上注入B,并扩散形成p基区(5);
S06:在所述p基区(5)上注入B,并扩散形成阳极p+区(6)。
优选的,所述衬底为硅衬底,为了实现本发明的快速软恢复效果二极管,所述步骤S02中,注入B剂量为1e13,能量为160kev,所述步骤S05中,注入B剂量为3e13,能量为60kev,所述步骤S06中,注入B剂量为1e15,能量为60kev。
本发明在n缓冲区和阴极n+区之间引入p+缓冲区,该结构阴极隐埋p+缓冲区形成两个背靠背的pn结,而对于n+n结可以将其等效为电阻,故其阴极等效电路为两个背靠背pn结与电阻的并联;该结构在阴极侧隐埋的p+缓冲区,在反向恢复期间可以向n-漂移区注入少数载流子空穴,降低nn+结处的电场强度,改善反向恢复软度,降低反向恢复峰值功耗,并提高了抗反向恢复动态动态雪崩能力。
上述说明示出并描述了本发明的优选实施例,如前所述,应当理解本发明并非局限于本文所披露的形式,不应看作是对其他实施例的排除,而可用于各种其他组合、修改和环境,并能够在本文所述发明构想范围内,通过上述教导或相关领域的技术或知识进行改动。而本领域人员所进行的改动和变化不脱离本发明的精神和范围,则都应在本发明所附权利要求的保护范围内。

Claims (5)

1.一种快速软恢复二极管的制作方法,其特征在于,包括以下步骤:
S01:提供一衬底;
S02:在所述衬底上区域注入B,形成p+缓冲区(2);
S03:在所述p+缓冲区(2)上外延n缓冲区(3),并进行热扩散;
S04:在所述n缓冲区(3)上外延n-漂移区(4);
S05:在所述n-漂移区(4)上注入B,并扩散形成p基区(5);
S06:在所述p基区(5)上注入B,并扩散形成阳极p+区(6)。
2.根据权利要求1所述的一种快速软恢复二极管的制作方法,其特征在于:所述衬底为硅衬底。
3.根据权利要求1所述的一种快速软恢复二极管的制作方法,其特征在于:所述步骤S02中,注入B剂量为1e13,能量为160kev。
4.根据权利要求1所述的一种快速软恢复二极管的制作方法,其特征在于:所述步骤S05中,注入B剂量为3e13,能量为60kev。
5.根据权利要求1所述的一种快速软恢复二极管的制作方法,其特征在于:所述步骤S06中,注入B剂量为1e15,能量为60kev。
CN201510876085.4A 2015-12-03 2015-12-03 一种快速软恢复二极管的制作方法 Pending CN105405870A (zh)

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Cited By (5)

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Publication number Priority date Publication date Assignee Title
CN106298970A (zh) * 2016-08-12 2017-01-04 无锡橙芯微电子股份有限公司 一种高压快速软恢复二极管及其制造方法
CN108242472A (zh) * 2016-12-27 2018-07-03 无锡昌德微电子股份有限公司 一种超快恢复二极管结构及实现方法
CN108520857A (zh) * 2018-03-30 2018-09-11 株洲中车时代电气股份有限公司 一种快恢复二极管及其制作方法
CN110854208A (zh) * 2019-11-28 2020-02-28 电子科技大学 一种含埋层结构的碳化硅PiN二极管
CN115547856A (zh) * 2022-10-20 2022-12-30 安徽钜芯半导体科技有限公司 一种高性能半导体整流芯片及其制备工艺

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CN102569067A (zh) * 2012-02-17 2012-07-11 北京时代民芯科技有限公司 一种平面高压超快软恢复二极管的制造方法
CN103311278A (zh) * 2012-03-11 2013-09-18 深圳市立德电控科技有限公司 快恢复二极管及制作该二极管的方法
CN104969360A (zh) * 2013-03-25 2015-10-07 富士电机株式会社 半导体装置

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JP2009224794A (ja) * 2002-02-20 2009-10-01 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
CN102569067A (zh) * 2012-02-17 2012-07-11 北京时代民芯科技有限公司 一种平面高压超快软恢复二极管的制造方法
CN103311278A (zh) * 2012-03-11 2013-09-18 深圳市立德电控科技有限公司 快恢复二极管及制作该二极管的方法
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298970A (zh) * 2016-08-12 2017-01-04 无锡橙芯微电子股份有限公司 一种高压快速软恢复二极管及其制造方法
CN108242472A (zh) * 2016-12-27 2018-07-03 无锡昌德微电子股份有限公司 一种超快恢复二极管结构及实现方法
CN108520857A (zh) * 2018-03-30 2018-09-11 株洲中车时代电气股份有限公司 一种快恢复二极管及其制作方法
CN110854208A (zh) * 2019-11-28 2020-02-28 电子科技大学 一种含埋层结构的碳化硅PiN二极管
CN110854208B (zh) * 2019-11-28 2021-04-02 电子科技大学 一种含埋层结构的碳化硅PiN二极管
CN115547856A (zh) * 2022-10-20 2022-12-30 安徽钜芯半导体科技有限公司 一种高性能半导体整流芯片及其制备工艺
CN115547856B (zh) * 2022-10-20 2023-05-16 安徽钜芯半导体科技有限公司 一种高性能半导体整流芯片及其制备工艺

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Application publication date: 20160316