CN105405859A - Crossing matrix column type magnetic random memory and reading-writing method thereof - Google Patents
Crossing matrix column type magnetic random memory and reading-writing method thereof Download PDFInfo
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Abstract
The invention provides a crossing matrix column type magnetic random memory. The memory comprises multiple first guide wires, multiple second guide wires and multiple crossing nodes limited because of mutual crossing of the first guide wires and the second guide wires, wherein the first guide wires and the second guide wires are arranged in a crossing mode and are arranged with intervals, each crossing node is respectively provided with a magnetic memory unit, the magnetic memory units are respectively electrically connected with the first guide wires and the second guide wires which are at corresponding crossing node portions of the magnetic memory units, the magnetic memory units comprise magnetic resistor elements and three-layer structures of conductive layers 1, oxide and conductive layers 2, the three-layer structures are electrically connected with the magnetic resistor elements, and the magnetic resistor elements can realize resistor state change through current passing through the magnetic resistor elements. The invention further provides a reading-writing method of the magnetic random memory.
Description
Technical field
The present invention relates to memory device field, particularly relate to a kind of cross matrix column magnetic RAM and reading/writing method thereof.
Background technology
People utilize the characteristic of MTJ (MTJ, MagneticTunnelJunction) to make magnetic RAM in recent years, are MRAM (MagneticRandomAccessMemory).MRAM is a kind of New Solid nonvolatile memory, and it has the characteristic of high-speed read-write.Ferromagnetism MTJ is generally sandwich structure, and be wherein magnetic memory layer, and it can change the direction of magnetization to record different data; Be positioned at the tunnel barrier layer of middle insulation; Magnetic reference layer, is positioned at the opposite side of tunnel barrier layer, and its direction of magnetization is constant.When Magnetic memory layer is parallel with the magnetization intensity vector direction between magnetic reference layer or antiparallel time, the Resistance states of MTJ element is also corresponding is respectively low resistance state or high-impedance state.The Resistance states of such measurement MTJ element can obtain the information stored.
A kind of existing method can obtain high magneto-resistor (MR, MagnetoResistance) rate: accelerate crystallization on the surface of the magnetic film of non crystalline structure and form one deck crystallization acceleration film.After this tunic is formed, crystallization starts to be formed from tunnel barrier layer side, makes the surface of tunnel barrier layer be formed with magnetic surface like this and mates, so just can obtain high MR and lead.
Generally by different write operation methods, MRAM device is classified.Traditional MRAM is magnetic field switch type MRAM: produce magnetic field in the intersection of two current line of intersecting, can change the magnetization direction of the Magnetic memory layer of MTJ element.Spin-transfer torque magnetic RAM (STT-MRAM, Spin-transferTorqueMagneticRandomAccessMemory) diverse write operation is then adopted, its utilize be electronics spin angular momentaum transfer, i.e. the electron stream of spin polarization is transferred to its angular momentum the magnetic material in Magnetic memory layer.The capacity of Magnetic memory layer is less, needs the spin polarized current carrying out write operation also less.Institute in this way can meet device miniaturization and low current density simultaneously.STT-MRAM has the characteristic of high-speed read-write, Large Copacity, low-power consumption, potential in electronic chip industry, especially in moving chip industry, substitutes traditional semiconductor memory to realize the non-volatile of energy conservation and data.
For current face inner mold STT-MRAM (wherein the direction of easy axis of MTJ element is in face), characteristic by face inner mold MTJ element limit, single component size is general comparatively large, and adjacent MTJ element needs comparatively Large space, to avoid mutual magnetic interference.Therefore, the lifting of face inner mold STT-MRAM product integrated level is limited.
Vertical-type MTJ (PMTJ, PerpendicularMagneticTunnelJunction) namely magnetic moment perpendicular to the MTJ of substrate surface, in such an embodiment, due to two magnetospheric magnetocrystalline anisotropy stronger (not considering shape anisotropy), make its direction of easy axis all perpendicular to layer surface.Under identical condition, component size can be done specific surface inner mold MTJ element is less, and it is very little that the magnetic polarization error of direction of easy axis can be done, and the reduction of MTJ component size makes required switch current also can correspondingly reduce.On the other hand, in memory arrays, the safe spacing of neighboring vertical type MTJ also can greatly reduce than face inner mold MTJ.Thus vertical-type STT-MRAM (pSTT-MRAM, perpendicularSpin-transferTorqueMagneticRandomAccessMemo ry) is than face inner mold STT-MRAM, its integrated level has very large room for promotion.
But in existing STT-MRAM structure; the MTJ element of each mnemon can connect a triode usually as current direction selector; as used metal-oxide-semiconductor; by the conducting of metal-oxide-semiconductor and cut-off to realize conduct current; thus the high resistance and low resistance state of MTJ element can be set by corresponding write current; also be namely written with storage information, and judge the Resistance states of MTJ element according to the size of read current, also namely read storage information.
For face inner mold STT-MRAM, based on the size of face inner mold MTJ element and the requirement of mutual spacing thereof, the size of triode is not the Main Bottleneck of raising face inner mold STT-MRAM integrated level, reduces the size of triode in other words, for the lifting limitation of face inner mold STT-MRAM integrated level.And it is on the contrary for vertical-type STT-MRAM situation, the size of vertical-type MTJ element and mutual spacing thereof greatly reduce than face inner mold MTJ element, the size of triode is almost depended in the now lifting of integrated level completely, even if use current state-of-the-art technique (live width), the size of triode is still much larger than vertical-type MTJ element, triode manufacturing process relatively also more complicated, improves the manufacturing cost of product simultaneously.
Therefore, those skilled in the art is devoted to the STT-MRAM product developing a kind of high integrated, high-performance, cost savings.
Summary of the invention
Because the above-mentioned defect of prior art, the invention provides a kind of cross matrix column magnetic RAM, it comprises some first guiding lines, and described some first guiding line intervals and some second guiding lines arranged in a crossed manner, and mutually intersects limited some crossover nodes by described some first guiding lines and described some second guiding lines; Each described crossover node is provided with Magnetic Memory unit, and described Magnetic Memory unit is electrically connected with first guiding line at crossover node place residing for it and the second guiding line respectively; Described Magnetic Memory unit comprises magnetoresistive element, and conductive layer 1/ oxide/conductive layer 2 three-decker be electrically connected with described magnetoresistive element; Described magnetoresistive element is by flowing through electric current wherein to change its Resistance states; The oxide of described conductive layer 1/ oxide/conductive layer 2 three-decker is the oxide of metal oxide, semi-conducting material, and conductive layer 1 and/or the conductive layer 2 of described conductive layer 1/ oxide/conductive layer 2 three-decker are metal, metal alloy, metal nitride or metal boride.Conductive layer 1/ oxide/conductive layer 2 three-decker herein refers to the conductive layer 1, oxide skin(coating), the conductive layer 2 that are disposed adjacent successively, but do not limit conductive layer 1, oxide skin(coating) or conductive layer 2 for single layer structure, conductive layer 1 or conductive layer 2 also can be superposed by multiple layer metal and/or metal compound layer and be formed, and oxide skin(coating) also can be superposed by multilayer oxide layer and be formed.
Further, described magnetoresistive element comprises face inner mold MTJ or vertical-type MTJ.
Common inner mold MTJ comprises:
Magnetic reference layer, the direction of magnetization of described magnetic reference layer is constant and magnetic anisotropy is parallel to layer surface;
Magnetic memory layer, the direction of magnetization of described Magnetic memory layer is variable and magnetic anisotropy is parallel to layer surface;
Tunnel barrier layer, described tunnel barrier layer is adjacent with described Magnetic memory layer with described magnetic reference layer respectively between described magnetic reference layer and described Magnetic memory layer.
Common vertical-type MTJ comprises:
Magnetic reference layer, the direction of magnetization of described magnetic reference layer is constant and magnetic anisotropy is surperficial perpendicular to layer;
Magnetic memory layer, the direction of magnetization of described Magnetic memory layer is variable and magnetic anisotropy is surperficial perpendicular to layer;
Tunnel barrier layer, described tunnel barrier layer is adjacent with described Magnetic memory layer with described magnetic reference layer respectively between described magnetic reference layer and described Magnetic memory layer.
Further, described conductive layer 1/ oxide/conductive layer 2 three-decker formed by the film of deposit.
Further, the patterning of described conductive layer 1/ oxide/conductive layer 2 three-decker and described magnetoresistive element uses same mask plate.
Further, the preparation section of described conductive layer 1/ oxide/conductive layer 2 three-decker is before described magnetoresistive element.
Further, the preparation section of described conductive layer 1/ oxide/conductive layer 2 three-decker is after described magnetoresistive element.
Further, the oxide of described conductive layer 1/ oxide/conductive layer 2 three-decker comprises Ni metal, the oxide of Cr, Co, Nb, Ni, Cd, Al, Fe, Hf, Ti, Ta, Mg, W, Zr, Zn, ZnMg or the oxide of ITO or Si.
Further, conductive layer 1 and/or the conductive layer 2 of described conductive layer 1/ oxide/conductive layer 2 three-decker comprise Pt, Ti, Ti/Pt, Ta, Hf, Pt, Ru, Ag, Ni, Al, Au, W, Cr, Zn, Cu, Mo, Co, Fe or Nb metal element, or comprise the alloy of any two above metal elements above-mentioned, or comprise the nitride of above-mentioned arbitrary metal element, or comprise the nitride of alloy of any two above metal elements above-mentioned, or comprise crystalline state or the amorphous borides of above-mentioned arbitrary metal element, or comprise the crystalline state of alloy or the amorphous borides of any two above metal elements above-mentioned.
Present invention also offers the reading/writing method of above-mentioned magnetic RAM, the Magnetic Memory unit wherein for arbitrary crossover node adopts following read-write operation:
Write operation: load on the first guiding line corresponding to crossover node and the second guiding line and write voltage, the write current of generation flows through corresponding magnetoresistive element to change its Resistance states;
Read operation: load on the first guiding line corresponding to crossover node and the second guiding line and read voltage, produce read current, described read current is not enough to the Resistance states changing the magnetoresistive element that it flows through.
Cross matrix column magnetic RAM of the present invention, conductive layer 1/ oxide/conductive layer 2 three-decker is utilized to substitute triode as the current direction selector in Magnetic Memory unit, achieve and use the power supply network of complexity instead simple staggered form supply power mode, thus greatly simplify MRAM production technology, reduce cost, and greatly can improve the integrated level of storage chip, particularly for pSTT-MRAM product.
Be described further below with reference to the technique effect of accompanying drawing to design of the present invention, concrete structure and generation, to understand object of the present invention, characteristic sum effect fully.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of existing Magnetic Memory unit;
Fig. 2 is the structural representation of the Magnetic Memory unit of a kind of cross matrix column magnetic RAM of the present invention;
Fig. 3 is conductive layer 1/ oxide/conductive layer 2 three-decker volt-ampere characteristic figure;
Fig. 4 is schematic diagram magnetoresistive element in Fig. 2 being set to low resistance state;
Fig. 5 is schematic diagram magnetoresistive element in Fig. 2 being set to high-impedance state;
Fig. 6 is magnetoresistance cells read operation schematic diagram in Fig. 2;
Fig. 7 is the structural representation of a kind of cross matrix column magnetic RAM of the present invention;
Fig. 8 is another structural representation of the cross matrix column magnetic RAM of Fig. 7;
Fig. 9 is the structural representation based on the different Magnetic Memory unit of 4 classes of the present invention.
Embodiment
In the description of embodiments of the present invention, it will be appreciated that, term " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward ", " clockwise ", orientation or the position relationship of the instruction such as " counterclockwise " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore limitation of the present invention can not be interpreted as.
Fig. 1 is a kind of structural representation of existing Magnetic Memory unit, and wherein Magnetic Memory unit 100 comprises magnetoresistive element 101, and the metal-oxide-semiconductor 102 of series connection with it, controls current direction by the conducting of metal-oxide-semiconductor 102 with cut-off.Magnetoresistive element involved herein generally comprises the magnetic reference layer, tunnel barrier layer and the Magnetic memory layer (namely forming MTJ) that are disposed adjacent successively, for in the materials and structures (multilayer or individual layer) of above-mentioned each layer and magnetoresistive element except above-mentioned three layers all the other retes (if any) setting, not emphasis of the present invention, does not limit at this; The Resistance states of magnetoresistive element can be changed by loading corresponding electric current.Magnetoresistive element in the present embodiment accompanying drawing generally adopts three-decker to represent, is only to indicate it to have mtj structure, does not get rid of the situation also having other rete in magnetoresistive element.
Fig. 2 is the structural representation of the Magnetic Memory unit of a kind of cross matrix column magnetic RAM of the present invention, wherein Magnetic Memory unit 200 comprises magnetoresistive element 201, and conductive layer 1/ oxide/conductive layer 2 three-decker 202 (hereinafter referred to as MOM structure 202, MOM and metal/oxide/metal) of series connection with it.Magnetoresistive element 201 comprises vertical-type MTJ, is specifically expressed as the three-decker of magnetoresistive element 201 in Fig. 2, is respectively Magnetic memory layer, tunnel barrier layer and magnetic reference layer from top to bottom.Magnetic Memory unit 200 controls current direction by the characteristic of MOM structure 202, the present embodiment adopts a kind of typical MOM structure C r/CrOx/Au (similar typical structure also comprises Nb/NbOx/Nb etc.), and it has IV curve as shown in Figure 3 (see PhotovoltaicTechnologiesBeyondtheHorizon:OpticalRectenna SolarCell.FinalReport1August2001 – 30September2002; B.BerlandITNEnergySystems, Inc.Littleton, Colorado).
The oxide layer of conductive layer 1/ oxide/conductive layer 2 three-decker can from the oxide of Ni metal, Cr, Co, Nb, Ni, Cd, Al, Fe, Hf, Ti, Ta, Mg, W, Zr, Zn or ZnMg, as CuOx, NiOx, AlOx, FeOx, HfOx, TaOx, MgOx, ZnOx, ZnMgOx etc., or ITO, or be Si oxide in select, the conductive layer of oxide both sides can be selected from following metal or its compound, can be Pt, Ti, Ti/Pt (Ti, Pt double-level-metal), Ta, Hf, Pt, Ru, Ag, Ni, Al, Au, W, Cr, Zn, Cu, Mo, Co, the metal elements such as Fe or Nb, also can be the alloy of any two above metal elements above-mentioned, also can be the nitride of the nitride of above-mentioned metal element or the alloy of any two above metal elements above-mentioned, as TiN, TaN etc., also can be crystalline state or the amorphous borides of the crystalline state of above-mentioned metal element or the alloy of amorphous borides or any two above metal elements above-mentioned, as TiB, TaB, AlB, CuB, NiB, CoB, CoFeB etc.
The read-write mode of Magnetic Memory unit 200 is as follows:
Write operation (low resistance state): as shown in Figure 4, Magnetic Memory unit 200 loads forward voltage, makes MOM structure 202 form current path, and flow through the electric current I of Magnetic Memory unit 200 when acting on the pressure drop Vw+ in MOM structure 202
lowbe enough to make the Magnetic memory layer of magnetoresistive element 201 under spin-transfer torque effect, the direction of magnetization is parallel with the direction of magnetization of magnetic reference layer, thus magnetoresistive element 201 is set to low resistance state.
Write operation (high-impedance state): as shown in Figure 5, Magnetic Memory unit 200 loads reverse voltage, makes MOM structure 202 form current path, and flow through the electric current I of Magnetic Memory unit 200 when acting on the pressure drop Vw-in MOM structure 202
highbe enough to make the Magnetic memory layer of magnetoresistive element 201 under spin-transfer torque effect, the direction of magnetization antiparallel of the direction of magnetization and magnetic reference layer, thus magnetoresistive element 201 is set to high-impedance state.
Read operation: as shown in Figure 6, Magnetic Memory unit 200 loads forward voltage, MOM structure 202 is made to form current path when acting on the pressure drop Vr in MOM structure 202, wherein electric current I r presents different size according to the high low resistance state of magnetoresistive element 201, thus achieves the reading for Magnetic Memory unit 200 inner storag information.
Vw+, Vw-and Vr of being carried in MOM structure 202 are shown in Fig. 3, for Vw+, Vw-roughly relative to longitudinal axis I symmetry, and need I have been met
lowand I
highsize be enough to respectively magnetoresistive element 201 is set to low resistance state and high-impedance state.The value of Vr is less than Vw+, makes the size of Ir be not enough to change the Resistance states of magnetoresistive element 201, is specifically not enough to be set to low resistance state when magnetoresistive element is in high-impedance state.
Fig. 7 shows the structural representation of the cross matrix column magnetic RAM that application Magnetic Memory unit 200 forms, comprising wordline 300 and bit line 400, schematically show only 3 wordline and 3 bit lines in Fig. 7, is wordline 301,302,303 and bit line 401,402,403 respectively.Wordline 300 and bit line 400 arranged in a crossed manner, form some crossover nodes (structure in Fig. 7 has 9 nodes).Each Nodes is provided with a Magnetic Memory unit, the two ends of Magnetic Memory unit are connected with bit line with the respective word at crossover node place, place respectively, namely Magnetic Memory unit 200 as shown in Figure 7 is arranged on the crossover node by wordline 302 and bit line 402, and the two ends of Magnetic Memory unit 200 connect wordline 302 and bit line 402 respectively.
Fig. 8 is the another kind of structural representation of the cross matrix column magnetic RAM shown in Fig. 7, and wherein the magnetoresistive element 201 of Magnetic Memory unit 200 is arranged near wordline, and MOM structure 202 is arranged near bit line.From process structure, be namely that magnetoresistive element 201 is prepared after MOM structure 202.
Above structure can also carry out all different transforms, and comprise (1) and exchanged mutually the position of magnetoresistive element 201 with MOM structure 202, namely MOM structure 202 is prepared after magnetoresistive element 201; (2) in magnetoresistive element 201, the order of each layer of MTJ can be from top to bottom magnetic reference layer, tunnel barrier layer and Magnetic memory layer successively, also can be Magnetic memory layer, tunnel barrier layer and magnetic reference layer; Thus namely have for Magnetic Memory unit the structure that 4 classes are different, as shown in Figure 9.Three-decker in Fig. 9 according to the difference of the difference of each layer chosen material and each layer order up and down, can also have multiple change, in view of of a great variety, not do concrete diagram.
For the read-write of Magnetic Memory unit each in Fig. 7 and Fig. 8, only need by loading read-write voltage between corresponding wordline and bit line, read-write mode as previously mentioned, repeats no more.For the read-write mode of Magnetic Memory unit each in Fig. 9 and aforesaid read-write mode roughly the same, be the voltage-current characteristic based on MOM structure and the Resistance states change of magnetoresistive element under the function of current equally.
On the other hand, in order to further optimised devices size, the MOM structure in the present embodiment adopts plural layers to be formed.And magnetoresistive element is also based on the stacking formation of plural layers, thus after can completing at all thin film depositions forming MOM structure and magnetoresistive element, photoetching/lithography is carried out to above-mentioned plural layers simultaneously, device size greatly reduces compared to prior art on the one hand, the patterning of magnetoresistive element and MOM structure only needs use one piece of mask plate on the other hand, also greatly reduces cost while improving chip integration.
In addition, have in the storage array of M × N number of storage element (M+N>>1) at one, i.e. M bit lines and N bar wordline, as the low resistance of current direction selector and high resistance are respectively R
land R
h, so:
must much smaller than 1; Thus need meet:
Therefore, in the design process of cross matrix column magnetic RAM of the present invention, be very important to the consideration of minimizing bypass leakage.So in the preparation process of conductive layer 1/ oxide/conductive layer 2 three-decker, need there is suitable anoxic concentration, with the balance making overall structure reach conducting resistance and leakage current in the oxide controlled well wherein.
More than describe preferred embodiment of the present invention in detail.Should be appreciated that those of ordinary skill in the art just design according to the present invention can make many modifications and variations without the need to creative work.Therefore, all technical staff in the art, all should by the determined protection range of claims under this invention's idea on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (9)
1. a magnetic RAM, it is characterized in that, comprise some first guiding lines, and described some first guiding line intervals and some second guiding lines arranged in a crossed manner, and mutually intersect limited some crossover nodes by described some first guiding lines and described some second guiding lines; Each described crossover node is provided with Magnetic Memory unit, and described Magnetic Memory unit is electrically connected with first guiding line at crossover node place residing for it and the second guiding line respectively; Described Magnetic Memory unit comprises magnetoresistive element, and conductive layer 1/ oxide/conductive layer 2 three-decker be electrically connected with described magnetoresistive element; Described magnetoresistive element is by flowing through electric current wherein to change its Resistance states; The oxide of described conductive layer 1/ oxide/conductive layer 2 three-decker is the oxide of metal oxide, semi-conducting material, and conductive layer 1 and/or the conductive layer 2 of described conductive layer 1/ oxide/conductive layer 2 three-decker are metal, metal alloy, metal nitride or metal boride.
2. magnetic RAM as claimed in claim 1, it is characterized in that, described magnetoresistive element comprises face inner mold MTJ or vertical-type MTJ.
3. magnetic RAM as claimed in claim 1, it is characterized in that, described conductive layer 1/ oxide/conductive layer 2 three-decker formed by the film of deposit.
4. magnetic RAM as claimed in claim 3, is characterized in that, the patterning of described conductive layer 1/ oxide/conductive layer 2 three-decker and described magnetoresistive element uses same mask plate.
5. magnetic RAM as claimed in claim 1, it is characterized in that, the preparation section of described conductive layer 1/ oxide/conductive layer 2 three-decker is before described magnetoresistive element.
6. magnetic RAM as claimed in claim 1, it is characterized in that, the preparation section of described conductive layer 1/ oxide/conductive layer 2 three-decker is after described magnetoresistive element.
7. magnetic RAM as claimed in claim 1, it is characterized in that, the oxide of described conductive layer 1/ oxide/conductive layer 2 three-decker comprises Ni metal, the oxide of Cr, Co, Nb, Ni, Cd, Al, Fe, Hf, Ti, Ta, Mg, W, Zr, Zn, ZnMg or the oxide of ITO or Si.
8. magnetic RAM as claimed in claim 1, it is characterized in that, conductive layer 1 and/or the conductive layer 2 of described conductive layer 1/ oxide/conductive layer 2 three-decker comprise Pt, Ti, Ti/Pt, Ta, Hf, Pt, Ru, Ag, Ni, Al, Au, W, Cr, Zn, Cu, Mo, Co, Fe or Nb metal element, or comprise the alloy of any two above metal elements above-mentioned, or comprise the nitride of above-mentioned arbitrary metal element, or comprise the nitride of alloy of any two above metal elements above-mentioned, or comprise crystalline state or the amorphous borides of above-mentioned arbitrary metal element, or comprise the crystalline state of alloy or the amorphous borides of any two above metal elements above-mentioned.
9. the reading/writing method of the magnetic RAM as described in as arbitrary in claim 1-8, it is characterized in that, the Magnetic Memory unit for arbitrary crossover node adopts following read-write operation:
Write operation: load on the first guiding line corresponding to crossover node and the second guiding line and write voltage, the write current of generation flows through corresponding magnetoresistive element to change its Resistance states;
Read operation: load on the first guiding line corresponding to crossover node and the second guiding line and read voltage, produce read current, the size of described read current is not enough to the Resistance states changing the magnetoresistive element that it flows through.
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| US20040100817A1 (en) * | 2002-11-26 | 2004-05-27 | Subramanian Chitra K. | Magnetoresistive random access memory (MRAM) cell having a diode with asymmetrical characteristics |
| CN102683580A (en) * | 2011-03-18 | 2012-09-19 | 三星电子株式会社 | Magnetic tunneling junction device, electronic system, memory system, and method of fabricating the same |
| US20150249209A1 (en) * | 2014-03-03 | 2015-09-03 | Qualcomm Incorporated | Self-aligned top contact for mram fabrication |
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2015
- 2015-10-15 CN CN201510666470.6A patent/CN105405859A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6331944B1 (en) * | 2000-04-13 | 2001-12-18 | International Business Machines Corporation | Magnetic random access memory using a series tunnel element select mechanism |
| US20040100817A1 (en) * | 2002-11-26 | 2004-05-27 | Subramanian Chitra K. | Magnetoresistive random access memory (MRAM) cell having a diode with asymmetrical characteristics |
| CN102683580A (en) * | 2011-03-18 | 2012-09-19 | 三星电子株式会社 | Magnetic tunneling junction device, electronic system, memory system, and method of fabricating the same |
| US20150249209A1 (en) * | 2014-03-03 | 2015-09-03 | Qualcomm Incorporated | Self-aligned top contact for mram fabrication |
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