CN105470275A - Manufacturing process of cross-torque array-type magnetic random memory - Google Patents
Manufacturing process of cross-torque array-type magnetic random memory Download PDFInfo
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Abstract
The invention provides a manufacturing process of a cross-torque array-type magnetic random memory. The process comprises the steps of: forming a bottom electrode; forming a magnetic memory unit array on the top part of the bottom electrode, wherein a plurality of layers of films are prepared to form a magnetic tunnel junction and a conductive layer 1/oxide/conductive layer 2 three-layer structure which are connected in series, the oxide of the conductive layer 1/oxide/conductive layer 2 three-layer structure is a metal oxide or an oxide of a semiconductor material, and the conductive layer 1 and/or the conductively layer 2 of the conductive layer 1/oxide/conductive layer 2 three-layer structure is metal, a metal alloy, a metal nitride or a metal boride; and forming a top electrode on the top part of the magnetic memory unit array. According to the invention, the production process of the MRAM is substantially simplified, the cost is lowered, and the integration of a storage chip is greatly improved especially of a pSTT-MAR product.
Description
Technical field
The present invention relates to memory device field, particularly relate to a kind of cross matrix column magnetic RAM manufacturing process.
Background technology
People utilize the characteristic of MTJ (MTJ, MagneticTunnelJunction) to make magnetic RAM in recent years, are MRAM (MagneticRandomAccessMemory).MRAM is a kind of New Solid nonvolatile memory, and it has the characteristic of high-speed read-write.Ferromagnetism MTJ is generally sandwich structure, and be wherein magnetic memory layer, and it can change the direction of magnetization to record different data; Be positioned at the tunnel barrier layer of middle insulation; Magnetic reference layer, is positioned at the opposite side of tunnel barrier layer, and its direction of magnetization is constant.When Magnetic memory layer is parallel with the magnetization intensity vector direction between magnetic reference layer or antiparallel time, the Resistance states of MTJ element is also corresponding is respectively low resistance state or high-impedance state.The Resistance states of such measurement MTJ element can obtain the information stored.
A kind of existing method can obtain high magneto-resistor (MR, MagnetoResistance) rate: accelerate crystallization on the surface of the magnetic film of non crystalline structure and form one deck crystallization acceleration film.After this tunic is formed, crystallization starts to be formed from tunnel barrier layer side, makes the surface of tunnel barrier layer be formed with magnetic surface like this and mates, so just can obtain high MR and lead.
Generally by different write operation methods, MRAM device is classified.Traditional MRAM is magnetic field switch type MRAM: produce magnetic field in the intersection of two current line of intersecting, can change the magnetization direction of the Magnetic memory layer of MTJ element.Spin-transfer torque magnetic RAM (STT-MRAM, Spin-transferTorqueMagneticRandomAccessMemory) diverse write operation is then adopted, its utilize be electronics spin angular momentaum transfer, i.e. the electron stream of spin polarization is transferred to its angular momentum the magnetic material in Magnetic memory layer.The capacity of Magnetic memory layer is less, needs the spin polarized current carrying out write operation also less.Institute in this way can meet device miniaturization and low current density simultaneously.STT-MRAM has the characteristic of high-speed read-write, Large Copacity, low-power consumption, potential in electronic chip industry, especially in moving chip industry, substitutes traditional semiconductor memory to realize the non-volatile of energy conservation and data.
For current face inner mold STT-MRAM (wherein the direction of easy axis of MTJ element is in face), characteristic by face inner mold MTJ element limit, single component size is general comparatively large, and adjacent MTJ element needs comparatively Large space, to avoid mutual magnetic interference.Therefore, the lifting of face inner mold STT-MRAM product integrated level is limited.
Vertical-type MTJ (PMTJ, PerpendicularMagneticTunnelJunction) namely magnetic moment perpendicular to the MTJ of substrate surface, in such an embodiment, due to two magnetospheric magnetocrystalline anisotropy stronger (not considering shape anisotropy), make its direction of easy axis all perpendicular to layer surface.Under identical condition, component size can be done specific surface inner mold MTJ element is less, and it is very little that the magnetic polarization error of direction of easy axis can be done, and the reduction of MTJ component size makes required switch current also can correspondingly reduce.On the other hand, in memory arrays, the safe spacing of neighboring vertical type MTJ also can greatly reduce than face inner mold MTJ.Thus vertical-type STT-MRAM (pSTT-MRAM, perpendicularSpin-transferTorqueMagneticRandomAccessMemo ry) is than face inner mold STT-MRAM, its integrated level has very large room for promotion.
But in existing STT-MRAM structure; the MTJ element of each mnemon can connect a triode usually as current direction selector; as used metal-oxide-semiconductor; by the conducting of metal-oxide-semiconductor and cut-off to realize conduct current; thus the high resistance and low resistance state of MTJ element can be set by corresponding write current; also be namely written with storage information, and judge the Resistance states of MTJ element according to the size of read current, also namely read storage information.
For face inner mold STT-MRAM, based on the size of face inner mold MTJ element and the requirement of mutual spacing thereof, the size of triode is not the Main Bottleneck of raising face inner mold STT-MRAM integrated level, reduces the size of triode in other words, for the lifting limitation of face inner mold STT-MRAM integrated level.And it is on the contrary for vertical-type STT-MRAM situation, the size of vertical-type MTJ element and mutual spacing thereof greatly reduce than face inner mold MTJ element, the size of triode is almost depended in the now lifting of integrated level completely, even if use current state-of-the-art technique (live width), the size of triode is still much larger than vertical-type MTJ element, triode manufacturing process relatively also more complicated, improves the manufacturing cost of product simultaneously.
Therefore, those skilled in the art is devoted to the STT-MRAM manufacturing process developing a kind of high integrated, high-performance, cost savings.
Summary of the invention
For achieving the above object, the invention provides a kind of magnetic RAM manufacturing process, comprising:
Form hearth electrode;
Magnetic Memory cell array is formed at described hearth electrode top, the MTJ and conductive layer 1/ oxide/conductive layer 2 three-decker of connecting is formed comprising preparing plural layers, the oxide of described conductive layer 1/ oxide/conductive layer 2 three-decker is the oxide of metal oxide, semi-conducting material, and conductive layer 1 and/or the conductive layer 2 of described conductive layer 1/ oxide/conductive layer 2 three-decker are metal, metal alloy, metal nitride or metal boride; Described herein " top " or " top " represents the side away from substrate base in corresponding construction;
Top electrode is formed at described Magnetic Memory cell array top.
Further, the formation of described hearth electrode comprises:
Depositions of bottom electrode metal level and hard mask one;
Photoetching hearth electrode;
Etching hearth electrode;
Deposit dielectrics one;
Surface planarisation.
Further, the formation of described Magnetic Memory cell array comprises:
The film of described conductive layer 1/ oxide/conductive layer 2 three-decker and described MTJ is formed at described hearth electrode deposited atop, the film of the wherein film of the MTJ described in sedimentary composition again of the film of conductive layer 1/ oxide/conductive layer 2 three-decker described in first sedimentary composition, or the film of MTJ described in first sedimentary composition conductive layer 1/ oxide/conductive layer 2 three-decker described in sedimentary composition again;
Deposit hard mask two;
Photoetching Magnetic Memory cell array;
Etching Magnetic Memory cell array;
Deposit dielectrics two;
Surface planarisation.
Further, the formation of described top electrode comprises:
At described Magnetic Memory cell array deposited atop top electrode metal level and hard mask three;
Photoetching top electrode;
Etching top electrode;
Deposit dielectrics three;
Surface planarisation.
Further, described MTJ comprises the magnetic reference layer of stacked setting, tunnel barrier layer and Magnetic memory layer.From the bottom to top, can be magnetic reference layer, tunnel barrier layer and Magnetic memory layer successively, also can be Magnetic memory layer, tunnel barrier layer and magnetic reference layer successively.The relative position of "up" and "down" described herein, " on " comparatively in D score further from substrate base.
Further, the oxide of described conductive layer 1/ oxide/conductive layer 2 three-decker comprises Ni metal, the oxide of Cr, Co, Nb, Ni, Cd, Al, Fe, Hf, Ti, Ta, Mg, W, Zr, Zn, ZnMg or the oxide of ITO or Si.
Further, conductive layer 1 and/or the conductive layer 2 of described conductive layer 1/ oxide/conductive layer 2 three-decker comprise Pt, Ti, Ti/Pt, Pt/Ti, Ta, Hf, Ru, Ag, Ni, Al, Au, W, Cr, Zn, Cu, Mo, Co, Fe or Nb metal element, or comprise the alloy of any two above metal elements above-mentioned, or comprise the nitride of above-mentioned arbitrary metal element, or comprise the nitride of alloy of any two above metal elements above-mentioned, or comprise crystalline state or the amorphous borides of above-mentioned arbitrary metal element, or comprise the crystalline state of alloy or the amorphous borides of any two above metal elements above-mentioned.
Further, the conductive layer 1 of described conductive layer 1/ oxide/conductive layer 2 three-decker and conductive layer 2 comprise the oxygen trapping layer (OxygenBarrierLayer) or oxygen uptake layer (OxygenGettingLayer) that are disposed adjacent with the oxide of described conductive layer 1/ oxide/conductive layer 2 three-decker respectively, to stop that oxonium ion spreads in described conductive layer 1 and conductive layer 2.
Further, described top electrode and/or described hearth electrode comprise metal level Cu; Or comprise sandwich construction TaN/Ta/Cu/Ta/TaN or TiN/Ti/Cu/Ti/TiN, wherein TaN/Ta or TiN/Ti at Cu top is as hard mask.
Further, described hearth electrode defines some first guiding lines, described top electrode defines some second guiding lines arranged in a crossed manner with described some first guiding lines, thus described some first guiding lines and described some second guiding lines define some crossover nodes; Each described crossover node is provided with a Magnetic Memory unit, and described Magnetic Memory unit is electrically connected with first guiding line at crossover node place residing for it and the second guiding line respectively.
Cross matrix column magnetic RAM obtained by the present invention, conductive layer 1/ oxide/conductive layer 2 three-decker is utilized to substitute triode as the current direction selector in Magnetic Memory unit, achieve and use the power supply network of complexity instead simple staggered form supply power mode, thus the present invention greatly simplify MRAM production technology, reduce cost, and greatly can improve the integrated level of storage chip, particularly for pSTT-MRAM product.
Be described further below with reference to the technique effect of accompanying drawing to design of the present invention, concrete structure and generation, to understand object of the present invention, characteristic sum effect fully.
Accompanying drawing explanation
Fig. 1 is the process chart of preferred embodiment of the present invention;
Fig. 2 is the post-depositional structural representation of hearth electrode metal level;
Fig. 3 is the structural representation after photoetching hearth electrode;
Fig. 4 is the structural representation after prepared by hearth electrode;
Fig. 5 is the end face schematic diagram of Fig. 4 structure;
Fig. 6 is the structural representation after conductive layer/oxide/conductive layer three-decker thin film deposition;
Fig. 7 is the structural representation after MTJ thin film deposition;
Fig. 8 is the structural representation after photoetching Magnetic Memory cell array;
Fig. 9 is the structural representation after etching Magnetic Memory cell array;
Figure 10 is the structural representation after prepared by Magnetic Memory cell array;
Figure 11 is the end face schematic diagram of Figure 10 structure;
Figure 12 is the structural representation after prepared by top electrode;
Figure 13 is the end face schematic diagram of Figure 12 structure;
Figure 14 is the structural representation first processing MTJ film reprocessing conductive layer/oxide/conductive layer three-decker film;
Figure 15 be a kind of cross matrix column random asccess memory perspective view.
Embodiment
In the description of embodiments of the present invention, it will be appreciated that, term " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward ", " clockwise ", orientation or the position relationship of the instruction such as " counterclockwise " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore limitation of the present invention can not be interpreted as.
Fig. 1 is the magnetic RAM preparation technology flow chart of the present embodiment, and concrete technology flow process is as follows:
1, depositions of bottom electrode conductive layer and hard mask
By physical vapour deposition (PVD) (PVD, PhysicalVaporDeposition) on substrate base 100, as physical sputtering, form Cu film 210, and as the Ta film 220 of hard mask (hardmask), as shown in Figure 2.In order to prevent the electron transfer of Cu, preferably with TaN/Ta and Ta/TaN, Cu film 210 is surrounded (not shown) respectively in the both sides up and down of Cu film 210, namely the sandwich construction of TaN/Ta/Cu/Ta/TaN is adopted, wherein the material layer on the "/" left side is arranged on the material layer of the right, and Ta also can substitute with Ti, namely adopts the sandwich construction of TiN/Ti/Cu/Ti/TiN.In above-mentioned sandwich construction, TaN/Ta or TiN/Ti of top layer can as hard mask.
2, photoetching hearth electrode
Coating photoresist 250 also photoetching forms hearth electrode pattern, as shown in Figure 3.
3, hearth electrode is etched
By etching, Cu film 210 and Ta film 220 form hearth electrode pattern.
4, deposit dielectrics, surface planarisation
By chemical vapour deposition (CVD) (CVD, ChemicalVaporDeposition), as PCVD (PECVD, PlasmaEnhancedChemicalVaporDeposition) SiO
2the groove that film 260 is formed after filling etching, and carry out planarization, as adopted cmp (CMP, ChemicalMechanicalPolishing), thus form structure shown in Fig. 4 (cutaway view) and Fig. 5 (vertical view).
5, depositing conducting layer/oxide/conductive layer three-decker film
As shown in Figure 6, by PVD successively depositing conducting layer 310, oxide layer 320 and conductive layer 330.Wherein, conductive layer 310 and conductive layer 330 can be selected from following metal or its compound, can be Pt, Ti, Ti/Pt (Ti, Pt double-level-metal), Pt/Ti, Ta, Hf, Pt, Ru, Ag, Ni, Al, Au, W, Cr, Zn, Cu, Mo, Co, the metal elements such as Fe or Nb, also can be the alloy of any two above metal elements above-mentioned, also can be the nitride of the nitride of above-mentioned metal element or the alloy of any two above metal elements above-mentioned, as TiN, TaN etc., also can be crystalline state or the amorphous borides of the crystalline state of above-mentioned metal element or the alloy of amorphous borides or any two above metal elements above-mentioned, as TiB, TaB, AlB, CuB, NiB, CoB, CoFeB etc., oxide layer 320 can from the oxide of Ni metal, Cr, Co, Nb, Ni, Cd, Al, Fe, Hf, Ti, Ta, Mg, W, Zr, Zn or ZnMg, as CrOx, NbOx, CuOx, NiOx, AlOx, FeOx, HfOx, TaOx, MgOx, ZnOx, ZnMgOx etc., or ITO, or being select in the oxide of Si, also can be the bilayer film of above-mentioned oxide composition.Typical three-decker is as Cr/CrOx/Au or Nb/NbOx/Nb etc.
Preferably, an oxygen trapping layer (as TaN or TiN) or oxygen uptake layer (not shown) can also be deposited between conductive layer 330 and oxide layer 320, as used Pt/Ti, Pt/Mg, Pt/Ta etc., to stop diffusion in oxonium ion conductive layer 330; Similarly, between oxide layer 320 and conductive layer 310, also deposit an oxygen trapping layer or oxygen uptake layer, as used Ti/Pt, Mg/Pt, Ta/Pt etc., to stop diffusion in oxonium ion conductive layer 310.
6, MTJ film is deposited
After above-mentioned technique completes, then generate MTJ by PVD deposition.In order to grow high-quality MTJ multilayer film, the smoothness of substrate surface is extremely important, and in general, surface roughness preferably controls within 2 dusts.For this purpose, first carry out cmp planarization, and then carry out the growth of MTJ multilayer film.Specifically deposited seed layer 410 (as Ta, NiCr etc.), magnetic reference layer 420, tunnel barrier layer 430, Magnetic memory layer 440 and hard mask layer 450 (as Ta etc.) successively, as shown in Figure 7.Certain magnetic reference layer 420, tunnel barrier layer 430 and Magnetic memory layer 440 can stack gradually described above from the bottom to top, also can from the bottom to top successively deposited magnetic memory layer, tunnel barrier layer and magnetic reference layer.
7, photoetching Magnetic Memory cell array
Then photoresist 460 is coated with and photoetching formation Magnetic Memory unit array patterns, as shown in Figure 8.
8, Magnetic Memory cell array is etched
Etched by special magnetic material, form the Magnetic Memory unit of some columns, each Magnetic Memory unit all has the MTJ and conductive layer/oxide/conductive layer three-decker that are connected in series.
Because MT reconnaissance J multilayer film relates to multiple transition metals, wherein a kind of method etches by reactive ion etching (RIE, ReactiveIonEtch) method.Specifically first etch hard mask with the etching gas of CF4 and so on, and then with methyl alcohol (CH
3or CO+NH OH)
3gas etches, until be finally parked in bottom electrode layer.In etching process, the edge 480 or destroyed of Magnetic Memory unit, thus lose their original physical characteristics, as shown in Figure 9.In order to remove impaired edge 480, once gentle etching processing can be carried out with ion beam, it is all removed.All with the whole multilayer film of ion beam etching, then can certainly use PECVD, grow edge-protected by each Magnetic Memory unit of one deck silicon nitride (SiN) film at once.
9, deposit dielectrics, surface planarisation
The groove formed after filling etching by PECVDSiO2 film 360 again, and carry out planarization with CMP effects on surface, namely form the structure as shown in Figure 10 (profile) and Figure 11 (vertical view).
10, top electrode conductive layer and hard mask is deposited
To prepare hearth electrode similar, form Cu film 510, as the electric conducting material preparing top electrode by PVD.Similarly, in order to prevent the electron transfer of Cu, preferably with TaN/Ta and Ta/TaN, Cu film 510 is surrounded (not shown) respectively in the both sides up and down of Cu film 510, namely the sandwich construction of TaN/Ta/Cu/Ta/TaN is adopted, and Ta also can substitute with Ti, namely adopts the sandwich construction of TiN/Ti/Cu/Ti/TiN.In above-mentioned sandwich construction, TaN/Ta or TiN/Ti of top layer can as hard mask.
11, photoetching top electrode, with photoetching hearth electrode resemble process.
12, top electrode is etched, with etching hearth electrode resemble process.
13, deposit dielectrics, surface planarisation
The groove formed after filling etching by PECVDSiO2 film, and carry out planarization with CMP effects on surface, namely form the structure as shown in Figure 12 (profile) and Figure 13 (vertical view).
In above-mentioned technological process, the preparation order of conductive layer/oxide/conductive layer three-decker film and MTJ film also can be put upside down, and namely first processes MTJ film reprocessing conductive layer/oxide/conductive layer three-decker film, as shown in figure 14.
In addition, in above technological process, a photoetching is adopted directly to form Magnetic Memory unit, Twi-lithography can certainly be adopted to be formed, for above-mentioned technique, wherein can first do a photoetching, etching, SiO2 filling and planarization after completing in conductive layer/oxide/conductive layer three-decker film preparation, carry out the deposition of MTJ film again, and corresponding photoetching (using identical mask plate with previous photoetching), etch, SiO2 fills and planarization, thus the Magnetic Memory cell array that formation is identical with said structure.
As shown in figure 13, hearth electrode comprises some Vertical dimension wires, as illustrated in the drawing wire 211,212,213, and top electrode comprises some horizontal guiding lines, as illustrated in the drawing wire 511,512.Wire 211,212,213 and wire 511,512 have intersected to form 6 crossover nodes mutually; Each crossover node is provided with a Magnetic Memory unit, thus define a kind of cross matrix column MRAM, Figure 15 show cross matrix column random asccess memory perspective view.
In addition, have in the storage array of M × N number of storage element (M+N>>1) at one, i.e. M bit lines and N bar wordline, as the low resistance of current direction selector and high resistance are respectively R
land R
h, so:
must much smaller than 1; Thus need meet:
Therefore, in cross matrix column magnetic RAM manufacturing process of the present invention, be very important to the consideration of minimizing bypass leakage.So in the preparation process of conductive layer/oxide/conductive layer three-decker, need there is suitable anoxic concentration, with the balance making overall structure reach conducting resistance and leakage current in the oxide controlled well wherein.The preferably double-decker of oxide wherein, comprises one deck complete oxidation and one deck does not have complete oxidation, such as TiO
2/ TiOx (wherein x<2), like this after adding voltage, forms a good current commutates function after oxide connects with metal.
More than describe preferred embodiment of the present invention in detail.Should be appreciated that those of ordinary skill in the art just design according to the present invention can make many modifications and variations without the need to creative work.Therefore, all technical staff in the art, all should by the determined protection range of claims under this invention's idea on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (10)
1. a magnetic RAM manufacturing process, is characterized in that, comprising:
Form hearth electrode;
Magnetic Memory cell array is formed at described hearth electrode top, the MTJ and conductive layer 1/ oxide/conductive layer 2 three-decker of connecting is formed comprising preparing plural layers, the oxide of described conductive layer 1/ oxide/conductive layer 2 three-decker is the oxide of metal oxide, semi-conducting material, and conductive layer 1 and/or the conductive layer 2 of described conductive layer 1/ oxide/conductive layer 2 three-decker are metal, metal alloy, metal nitride or metal boride;
Top electrode is formed at described Magnetic Memory cell array top.
2. manufacturing process as claimed in claim 1, it is characterized in that, the formation of described hearth electrode comprises:
Depositions of bottom electrode metal level and hard mask one;
Photoetching hearth electrode;
Etching hearth electrode;
Deposit dielectrics one;
Surface planarisation.
3. manufacturing process as claimed in claim 1, it is characterized in that, the formation of described Magnetic Memory cell array comprises:
The film of described conductive layer 1/ oxide/conductive layer 2 three-decker and described MTJ is formed at described hearth electrode deposited atop, the film of the wherein film of the MTJ described in sedimentary composition again of the film of conductive layer 1/ oxide/conductive layer 2 three-decker described in first sedimentary composition, or the film of MTJ described in first sedimentary composition conductive layer 1/ oxide/conductive layer 2 three-decker described in sedimentary composition again;
Deposit hard mask two;
Photoetching Magnetic Memory cell array;
Etching Magnetic Memory cell array;
Deposit dielectrics two;
Surface planarisation.
4. manufacturing process as claimed in claim 1, it is characterized in that, the formation of described top electrode comprises:
At described Magnetic Memory cell array deposited atop top electrode metal level and hard mask three;
Photoetching top electrode;
Etching top electrode;
Deposit dielectrics three;
Surface planarisation.
5. manufacturing process as claimed in claim 1, is characterized in that, described MTJ comprises the magnetic reference layer of stacked setting, tunnel barrier layer and Magnetic memory layer.
6. manufacturing process as claimed in claim 1, it is characterized in that, the oxide of described conductive layer 1/ oxide/conductive layer 2 three-decker comprises Ni metal, the oxide of Cr, Co, Nb, Ni, Cd, Al, Fe, Hf, Ti, Ta, Mg, W, Zr, Zn, ZnMg or the oxide of ITO or Si.
7. manufacturing process as claimed in claim 1, it is characterized in that, conductive layer 1 and/or the conductive layer 2 of described conductive layer 1/ oxide/conductive layer 2 three-decker comprise Pt, Ti, Ti/Pt, Pt/Ti, Ta, Hf, Ru, Ag, Ni, Al, Au, W, Cr, Zn, Cu, Mo, Co, Fe or Nb metal element, or comprise the alloy of any two above metal elements above-mentioned, or comprise the nitride of above-mentioned arbitrary metal element, or comprise the nitride of alloy of any two above metal elements above-mentioned, or comprise crystalline state or the amorphous borides of above-mentioned arbitrary metal element, or comprise the crystalline state of alloy or the amorphous borides of any two above metal elements above-mentioned.
8. manufacturing process as claimed in claim 1, it is characterized in that, the conductive layer 1 of described conductive layer 1/ oxide/conductive layer 2 three-decker and conductive layer 2 comprise the oxygen trapping layer or oxygen uptake layer that are disposed adjacent with the oxide of described conductive layer 1/ oxide/conductive layer 2 three-decker respectively, to stop that oxonium ion spreads in described conductive layer 1 and conductive layer 2.
9. manufacturing process as claimed in claim 1, it is characterized in that, described top electrode and/or described hearth electrode comprise metal level Cu; Or comprise sandwich construction TaN/Ta/Cu/Ta/TaN or TiN/Ti/Cu/Ti/TiN, wherein TaN/Ta or TiN/Ti at Cu top is as hard mask.
10. the manufacturing process as described in claim 1-9, it is characterized in that, described hearth electrode defines some first guiding lines, described top electrode defines some second guiding lines arranged in a crossed manner with described some first guiding lines, thus described some first guiding lines and described some second guiding lines define some crossover nodes; Each described crossover node is provided with a Magnetic Memory unit, and described Magnetic Memory unit is electrically connected with first guiding line at crossover node place residing for it and the second guiding line respectively.
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