CN110061125A - A kind of production method of stereochemical structure magnetic RAM - Google Patents
A kind of production method of stereochemical structure magnetic RAM Download PDFInfo
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- CN110061125A CN110061125A CN201810048261.9A CN201810048261A CN110061125A CN 110061125 A CN110061125 A CN 110061125A CN 201810048261 A CN201810048261 A CN 201810048261A CN 110061125 A CN110061125 A CN 110061125A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Abstract
The invention discloses a kind of production methods of stereochemical structure magnetic RAM, first electrode layer is first deposited on substrate, according to preset MTJ cell layer number, the MTJ cell of multilayer is sequentially generated in first electrode layer after the same method, forms stereochemical structure；Then channel is being etched between each column MTJ cell in stereochemical structure, production selection switching tube in channels, oxide deposition is finally carried out in channels, and the oxide of deposition is etched away along the side wall of channel, substrate ion injection and extension are carried out in channels, and isolation channel is etched, isolation channel is filled with insulating materials, ion implanting is finally carried out again and completes preparation.The present invention is by planar structure three-dimensional, in the case where not increasing area, so that the capacity of magnetic RAM is multiplied.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors more particularly to a kind of production of stereochemical structure magnetic RAM
Method.
Background technique
MRAM (Magnetic Random Access Memory) is a kind of non-volatile magnetic RAM.It
Possess Static RAM (SRAM) high speed read write capability, the high integration of dynamic RAM (DRAM) and
Power consumption is lower than DRAM from far away, relative to flash memory (Flash), with using the increase performance of time not move back
Change.Due to the features described above that MRAM has, it is referred to as general-purpose storage (universal memory), is believed to replace
SRAM, DRAM, EEPROM and Flash.
Different from traditional random access memory chip manufacturing technology, the data in MRAM are not the shapes with charge or electric current
Formula storage, but a kind of magnetic state stores, and is incuded by measurement resistance, will not interfere magnetic state.MRAM is used
Magnetic tunnel-junction (MTJ) structure carries out data storage, and in general, mram cell is by transistor (1T) and a magnetic tunnel
Road knot (MTJ) collectively constitutes a storage unit, and the magnetic tunnel-junction (MTJ) structure includes at least two electromagnetic layers and use
In the insulating layer of isolation two electromagnetic layers.One of electromagnetic layer is fixed magnetic layer, will through strength fixed field
Electrode is fixed on specific direction.And another electromagnetic layer is magnetosphere free to rotate, and electrode is remained at a side.
However tradition MRAM is manufactured based on planar technology, slightly bigger capacity needs occupy very large area.
Summary of the invention
The object of the present invention is to provide a kind of production method of stereochemical structure magnetic RAM, using stereochemical structure come
Production, increases the quantity of magnetic tunnel junction MTJ in unit area, to improve the capacity of magnetic RAM.
To achieve the goals above, technical solution of the present invention is as follows:
A kind of production method of stereochemical structure magnetic RAM, the production of the stereochemical structure magnetic RAM
Method, comprising:
Step 1 deposits first electrode layer on substrate；
Step 2 passes through lithography and etching generation first layer MTJ cell on first electrode layer；
Step 3 carries out oxide deposition and chemically mechanical polishing in first layer MTJ cell, and deposits protective layer；
Step 4, the corresponding protective layer of etching of first layer MTJ cell, deposit second on protective layer and first layer MTJ cell
Electrode layer；
Step 5, according to preset MTJ cell layer number, using the method for step 2- step 4 on the second electrode lay after
It is continuous to be stacked, form stereochemical structure；
Step 6 is etching channel between each column MTJ cell in stereochemical structure, and the trench bottom etched reaches substrate；
Step 7, along channel side wall by wet etching, fall each MTJ cell pair according to the first preset deep etching
The oxide answered；
Step 8 is backfilled channel and the oxide portions etched away using polysilicon, and etches channel again,
The trench bottom etched reaches the top of substrate；
Step 9 falls the corresponding polysilicon of each MTJ cell according to the second preset deep etching along the side wall of channel；
Step 10 carries out oxide deposition in channels, and the oxide of deposition is etched away along the side wall of channel；
Step 11 carries out substrate ion injection and extension in channels, and etches isolation channel, to isolation channel insulation material
Material filling finally carries out ion implanting again and completes preparation.
Further, Ni is also deposited among the substrate and first electrode layer.
Further, Ni deposition with a thickness of 200~300A.
It is further, described that first layer MTJ cell is generated by lithography and etching on first electrode layer, further includes:
On first electrode layer, the deposit of protective layer is carried out to the MTJ cylinder circumference etched.
Further, the protective layer is silicon nitride SIN, with a thickness of 200~400A.
Further, the oxide oxide deposited in the MTJ cell with a thickness of 300~600A, the thickness of protective layer
For 200~400A.
Further, the described first preset depth is 500~800A.
Further, the described second preset depth is 100~300A.
Further, the isolation channel is filled with insulating materials, and the insulating materials used is SiO2。
The invention proposes a kind of production methods of stereochemical structure magnetic RAM, according to preset MTJ cell layer
Quantity sequentially generates the MTJ cell of multilayer in first electrode layer, forms stereochemical structure；Then each column MTJ in stereochemical structure
Channel is etched between unit, production selection switching tube, finally carries out oxide deposition, and along channel in channels in channels
Side wall etch away the oxide of deposition, substrate ion injection and extension are carried out in channels, and etch isolation channel, to isolation
Slot is filled with insulating materials, is finally carried out ion implanting again and is completed preparation.Planar structure three-dimensional is not being increased face by the present invention
In the case where product, so that the capacity of magnetic RAM is multiplied.
Detailed description of the invention
Fig. 1 is the production method of stereochemical structure magnetic RAM of the present invention；
Fig. 2 is first layer of embodiment of the present invention MTJ cell structural schematic diagram；
Fig. 3 is that oxide of the embodiment of the present invention deposits and polish structural schematic diagram；
Fig. 4 is that the embodiment of the present invention deposits structural schematic diagram after protective layer；
Fig. 5 is protective layer of embodiment of the present invention etching structure schematic diagram；
Fig. 6 is that the second electrode lay of the embodiment of the present invention deposits structural schematic diagram；
Fig. 7 is schematic perspective view of the embodiment of the present invention；
Fig. 8 is channel etching of embodiment of the present invention structural schematic diagram；
Fig. 9 is channel of embodiment of the present invention side wall oxide etching structural schematic diagram；
Figure 10 is channel of embodiment of the present invention polysilicon interstitital texture schematic diagram；
Figure 11 is etching polysilicon of embodiment of the present invention structural schematic diagram；
Figure 12 is that polysilicon of the embodiment of the present invention is pulled back etching structure schematic diagram；
Figure 13 is that channel of the embodiment of the present invention conserves object interstitital texture schematic diagram；
Figure 14 is tunnel oxide of embodiment of the present invention etching structure schematic diagram；
Figure 15 is silicon substrate of embodiment of the present invention ion implanting and delays structural schematic diagram outside；
Figure 16 is that structural schematic diagram after groove etched and filling and ion implanting is isolated in the embodiment of the present invention；
Figure 17 is the corresponding magnetic RAM circuit diagram of stereochemical structure of the embodiment of the present invention.
Specific embodiment
Technical solution of the present invention is described in further details with reference to the accompanying drawings and examples, following embodiment is not constituted
Limitation of the invention.
A kind of production method of stereochemical structure magnetic RAM of the present embodiment, as shown in Figure 1, including the following steps:
Step S1, first electrode layer is deposited on substrate.
Specifically, the present embodiment substrate is semiconductor substrate, and the substrate of magnetic RAM can be metal, glass,
The materials such as silicon or metal alloy, silicon due to its it is easy to process for integrated circuit (although always magnetic sensor do not need it is this
Circuit) become best selection.The present embodiment is illustrated by taking silicon as an example.
The present embodiment deposits first electrode layer on a silicon substrate, the lower electrode as first layer MTJ cell, first electrode layer
With a thickness of 400A-700A.In magnetic RAM, top electrode and lower electrode are conductive material shape common in this field
At film, it is any in Ta, TaN, Ti, TiN, TaAlN and TiAlN, the present embodiment use TaN.
Preferably, the present embodiment is also deposited with Ni (200~300A) between silicon substrate and first electrode layer, for Si
In conjunction with silicide is formed, resistance is reduced.
For the ease of statement, electrode layer TaN and Ni are also indicated with one layer in the attached drawing of the present embodiment, be expressed as TaN or
TaN/Ni。
Step S2, first layer MTJ cell is generated by lithography and etching on first electrode layer.
Specifically, as shown in Fig. 2, the accumulation of MTJ cell is not being repeated here using conventional method manufacture.MTJ element
It is made of pinning layer (Pinning Layer), tunnel barrier layer (Tunnel Barrier), free layer (Free Layer).Nail
It pricks layer to be made of ferromagnetic layer (nailed layer, Pinned Layer) and inverse ferric magnetosphere (AFM Layer), ferromagnetic layer and inverse ferric magnetosphere
Between exchange-coupling interaction determine the magnetic moment direction of ferromagnetic layer；Tunnel barrier layer is usually made of MgO or Al2O3, is located at
The top of ferromagnetic layer.Ferromagnetic layer is located at the top of tunnel barrier layer.Lower electrode layer (Bottom Conducting Layer) and upper
Electrode layer (Top Conducting Layer) is directly in electrical contact to relevant inverse ferric magnetosphere and free layer, and electrode layer generallys use
Non-magnetic conductive material.
The present embodiment carries out the deposit of protective layer to the MTJ cylinder circumference etched also on first electrode layer, protects
The material of sheath generallys use silicon nitride SIN or SiNx, and the other materials such as AlOx, thickness is in 200~400A or so, preferably
For 150A, the minus 10 power nanometer that an A is 10.
Step S3, oxide deposition and chemically mechanical polishing are carried out in first layer MTJ cell, and deposit protective layer.
As shown in figure 3, the present embodiment carries out oxide deposition and chemically mechanical polishing in first layer MTJ cell.In magnetic
Property random access memory manufacturing process in, oxide oxide can be common dielectric material in this field, for example, SiO2 or its
His oxide etc..The present embodiment, which carries out CMP (Chemical Mechanical Polishing) chemically mechanical polishing, can make surface
Planarization, and make most upper one layer of MTJ it is concordant with oxide surface, contacted convenient for subsequent with the second electrode lay thereon.
As shown in figure 4, depositing protective layer on first layer MTJ cell and oxide, the material of protective layer is generallyd use
Silicon nitride SIN or SiNx, the other materials such as AlOx, thickness in 200~400A or so, preferably 150A, an A be 10 it is negative
10 power nanometers.
On the make, the rear surface of fill oxide and filling SIN are very uneven, can be polished using CMP.This
Embodiment oxide oxide with a thickness of 300A~600A, the thickness of protective layer is in 200~400A or so.
The deposition of the present embodiment oxide can be filled space, be also convenient for the production of subsequent other elements.And it protects
The deposition of sheath is not affected in subsequent production also for protection MTJ cell.
The oxide of the present embodiment deposition is opened convenient for carrying out sideetching filling polysilicon in subsequent step to make selection
The grid of pipe is closed, which is not described herein again.
Step S4, the corresponding protective layer of etching of first layer MTJ cell deposits on protective layer and first layer MTJ cell
Two electrode layers.
As shown in figure 5, the present embodiment etches away the corresponding protective layer of MTJ cell, and mono- in protective layer and first layer MTJ
The second electrode lay (as shown in Figure 6) is deposited in member, so that the second electrode lay is electrically connected with MTJ cell.
The present embodiment the second electrode lay is the top electrode as first layer MTJ cell, while as next layer of MTJ cell
Lower electrode, which is not described herein again.
Step S5, according to preset MTJ cell layer number, using the method for step S2-S4 on the second electrode lay after
It is continuous to be stacked, form stereochemical structure.
The present embodiment is continuously increased to increase the quantity of MTJ in unit area using the method stacked in layer
The quantity of MTJ, according to the quantity of MTJ cell layer preset in design, the method for constantly repeating step S2-S4 is stacked.
Such as being designed as three layers, i.e., preset MTJ cell layer number is 3, then the stereochemical structure of heap poststack is as shown in Figure 7.
Step S6, channel is being etched between each column MTJ cell in stereochemical structure, the trench bottom etched reaches lining
Bottom.
As shown in figure 8, the present embodiment in stereochemical structure, arranges multiple MTJ cells of consistency from top to bottom as one, by pre-
If mesh pattern exposure mask, can will etch channel between each column MTJ cell.
The trench bottom that the present embodiment etches reaches substrate, for making the selection switching tube in later period.
As illustrated in the embodiment of figure 8, this step finally etches the MTJ cylindrical body that characteristic size is 60~80nm, each
A cylindrical body includes three MTJ cells.
Step S7, each MTJ cell pair is fallen according to the first preset deep etching by wet etching along the side wall of channel
The oxide answered.
The purpose of this step is pulled back to the corresponding oxide of MTJ, as shown in figure 9, default according to the first of design
Depth (500~800A), inwardly etched along the side wall of channel, in order to subsequent step polysilicon poly fill, be used for
The grid of production selection switching tube.The present embodiment wet etching falls oxide oxide etch, only because of chemical corrosion liquid thus
There is corrosiveness to oxide, SIN will not be consumed.
Step S8, channel and the oxide portions etched away are backfilled using polysilicon, and etch channel again,
The trench bottom etched reaches the top of substrate.
This step is as shown in Figure 10, Figure 11, the oxide portions and ditch etched away first using polysilicon refilling step S7
Road, then removes the polysilicon of channel portion, and etches away the TaN of the corresponding first layer electrode layer of channel, directly reaches substrate.
Step S9, fall the corresponding polysilicon of each MTJ cell according to the second preset deep etching along the side wall of channel.
As shown in figure 12, each MTJ cell is etched away according to the second preset depth (100~300A) along the side wall of channel
Corresponding polysilicon, there are partial polysilicons (400~700A) among two layers of protective layer of MTJ in this way, is used as subsequent selection
The grid of switching tube.
Step S10, oxide deposition is carried out in channels, and the oxide of deposition is etched away along the side wall of channel.
As shown in Figure 13,14, oxide deposition is first being carried out in channels, is then etching away extra oxide, mesh
Be that the polysilicon segment etched away in step s 9 fills out oxide, a part of the oxide alternatively switching tube.
Step S11, substrate ion injection and extension are carried out in channels, and etches isolation channel, are insulated to isolation channel
Material filling finally carries out ion implanting again and completes preparation.
As shown in figure 15, substrate ion injection and extension are carried out in channels, wherein carrying out N+ ion implanting, shape in substrate
At the source electrode of selection switching tube, and Si extension is carried out, fills channel.
As shown in figure 16, etch isolation channel in channels, isolation channel is the middle section of channel, to the MTJ on both sides into
Row isolation, isolation channel is filled with insulating materials, such as SiO2(optional SIN or organic matter SOG, SOC etc.).
N+ ion implanting finally is carried out in the silicon upper part of extension, forms the drain electrode of selection switching tube.
The present embodiment is suitable for the production of magnetic RAM as shown in figure 17, and T1, T2, T3 are MTJ pairs in Figure 17
The selection switching tube answered.MTJ1, MTJ2 and MTJ3 are illustrated only in the manufacturing process diagram (as shown in figure 16) of embodiment,
MTJ1, MTJ2 and MTJ3 are vertically arranged.If X-axis will be laterally used as, vertical column are as Z axis, then MTJ4, MTJ5 in Figure 17
It is then made in the Y-axis direction with MTJ6.Right-hand component shown in Figure 16 can be considered as another group of MTJ, so as to limited
The magnetic RAM of large capacity is produced in area, which is not described herein again.
It should be noted that conventional method in that art system can be used for wordline, the bit line etc. of magnetic RAM
Make, which is not described herein again.Meanwhile the manufacture crafts such as photoetching employed in the present embodiment technical solution, etching, deposition, CMP,
There is a large amount of optional technical solution in the prior art, has also repeated no more here.
The above embodiments are merely illustrative of the technical solutions of the present invention rather than is limited, without departing substantially from essence of the invention
In the case where mind and its essence, those skilled in the art make various corresponding changes and change in accordance with the present invention
Shape, but these corresponding changes and modifications all should fall within the scope of protection of the appended claims of the present invention.
Claims (9)
1. a kind of production method of stereochemical structure magnetic RAM, which is characterized in that the stereochemical structure magnetic random is deposited
The production method of reservoir, comprising:
Step 1 deposits first electrode layer on substrate；
Step 2 passes through lithography and etching generation first layer MTJ cell on first electrode layer；
Step 3 carries out oxide deposition and chemically mechanical polishing in first layer MTJ cell, and deposits protective layer；
Step 4, the corresponding protective layer of etching of first layer MTJ cell, deposit second electrode on protective layer and first layer MTJ cell
Layer；
Step 5, according to preset MTJ cell layer number, using the method for step 2- step 4 continue on the second electrode lay into
Row stacks, and forms stereochemical structure；
Step 6 is etching channel between each column MTJ cell in stereochemical structure, and the trench bottom etched reaches substrate；
Step 7, along channel side wall by wet etching, it is corresponding to fall each MTJ cell according to the first preset deep etching
Oxide；
Step 8 is backfilled channel and the oxide portions etched away using polysilicon, and etches channel again, is etched
Trench bottom out reaches the top of substrate；
Step 9 falls the corresponding polysilicon of each MTJ cell according to the second preset deep etching along the side wall of channel；
Step 10 carries out oxide deposition in channels, and the oxide of deposition is etched away along the side wall of channel；
Step 11 carries out substrate ion injection and extension in channels, and etches isolation channel, is filled out to isolation channel with insulating materials
It fills, finally carries out ion implanting again and complete preparation.
2. the production method of stereochemical structure magnetic RAM as described in claim 1, which is characterized in that the substrate with
Ni is also deposited among first electrode layer.
3. the production method of stereochemical structure magnetic RAM as claimed in claim 2, which is characterized in that the Ni deposition
With a thickness of 200~300A.
4. the production method of stereochemical structure magnetic RAM as described in claim 1, which is characterized in that described first
First layer MTJ cell is generated by lithography and etching on electrode layer, further includes:
On first electrode layer, the deposit of protective layer is carried out to the MTJ cylinder circumference etched.
5. the production method of stereochemical structure magnetic RAM as claimed in claim 4, which is characterized in that the protective layer
For silicon nitride SIN, with a thickness of 200~400A.
6. the production method of stereochemical structure magnetic RAM as described in claim 1, which is characterized in that the MTJ is mono-
The oxide oxide deposited in member with a thickness of 300~600A, protective layer with a thickness of 200~400A.
7. the production method of stereochemical structure magnetic RAM as described in claim 1, which is characterized in that described first is pre-
If depth be 500~800A.
8. the production method of stereochemical structure magnetic RAM as described in claim 1, which is characterized in that described second is pre-
If depth be 100~300A.
9. the production method of stereochemical structure magnetic RAM as described in claim 1, which is characterized in that the isolation channel
It is filled with insulating materials, the insulating materials used is SiO2。
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| CN112885961A (en) * | 2019-11-29 | 2021-06-01 | 上海新微技术研发中心有限公司 | SOT-MRAM device and manufacturing method thereof |
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| US20090218558A1 (en) * | 2008-02-28 | 2009-09-03 | Jun-Beom Park | Semiconductor device and method of forming the same |
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| CN104241294A (en) * | 2014-09-16 | 2014-12-24 | 华中科技大学 | Nonvolatile three-dimensional semiconductor memory and manufacturing method thereof |
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