CN105449099B - Cross matrix column magnetic RAM and its reading/writing method - Google Patents
Cross matrix column magnetic RAM and its reading/writing method Download PDFInfo
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- CN105449099B CN105449099B CN201510666498.XA CN201510666498A CN105449099B CN 105449099 B CN105449099 B CN 105449099B CN 201510666498 A CN201510666498 A CN 201510666498A CN 105449099 B CN105449099 B CN 105449099B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
Abstract
The invention provides a kind of cross matrix column magnetic RAM, including some first guiding lines and some first guiding line intervals and some second guiding lines arranged in a crossed manner, and some crossover nodes limited that intersected by some first guiding lines and some second guiding lines；Each crossover node is provided with Magnetic Memory unit, and the Magnetic Memory unit electrically connects with the first guiding line at its residing crossover node and the second guiding line respectively；The Magnetic Memory unit includes magnetoresistive element, the first diode and the second diode, first diode and second diodes in parallel are connected and electrically connected with the magnetoresistive element, and the polarity closure of first diode and second diode is opposite；The magnetoresistive element can change its Resistance states by flowing through electric current therein.Present invention also offers the reading/writing method of above-mentioned magnetic RAM.
Description
Technical field
The present invention relates to memory device field, more particularly to a kind of cross matrix column magnetic RAM and its read-write
Method.
Background technology
People make magnetic using the characteristic of MTJ (MTJ, Magnetic Tunnel Junction) in recent years
Random access memory, as MRAM (Magnetic Random Access Memory).MRAM is that a kind of New Solid is non-volatile
Memory body, it has the characteristic of high-speed read-write.Ferromagnetism MTJ is usually sandwich structure, wherein the memory layer that is magnetic, it can be with
Change the direction of magnetization to record different data；Positioned at the tunnel barrier layer of the insulation of centre；Magnetic reference layer, positioned at tunnel gesture
The opposite side of barrier layer, its direction of magnetization are constant.Magnetization intensity vector between Magnetic memory layer and magnetic reference layer
When direction is parallel or antiparallel, the Resistance states of MTJ element are also respectively accordingly low resistance state or high-impedance state.So measure MTJ element
Resistance states be the information that can be stored.
A kind of existing method can obtain high magneto-resistor (MR, Magneto Resistance) rate：In non crystalline structure
The surface of magnetic film accelerates crystallization to form a layer crystalization and accelerates film.After this tunic is formed, crystallization starts from tunnel barrier layer one
Side is formed, so that the surface of tunnel barrier layer forms with magnetic surface and matched, and so can be obtained by high MR rates.
Typically MRAM device is classified by different write operation methods.Traditional MRAM is magnetic field switch type
MRAM：Magnetic field is produced in the intersection of the electric current line of two intersections, the intensity of magnetization side of the Magnetic memory layer of MTJ element can be changed
To.Spin-transfer torque magnetic RAM (STT-MRAM, Spin-transfer Torque Magnetic Random
Access Memory) then use entirely different write operation, what it was utilized be electronics spin angular momentaum transfer, that is, pole of spinning
The electron stream of change is transferred to its angular momentum the magnetic material in Magnetic memory layer.The capacity of Magnetic memory layer it is smaller, it is necessary to
The spin polarized current for carrying out write operation is also smaller.Institute can meet that device miniaturization is close with low current simultaneously in this way
Degree.STT-MRAM has high-speed read-write, Large Copacity, the characteristic of low-power consumption, potential in electronic chip industry, especially mobile core
In piece industry, traditional semiconductor memory is substituted to realize the non-volatile of energy conservation and data.
For current face inner mold STT-MRAM (wherein the direction of easy axis of MTJ element is in face), by face inner mold
The characteristic of MTJ element is limited, and single element size is generally large, and adjacent MTJ element needs larger spacing, to avoid phase
Magnetic interference between mutually.Therefore, the lifting of face inner mold STT-MRAM product integrated levels is limited.
Vertical-type MTJ (PMTJ, Perpendicular Magnetic Tunnel Junction) is that magnetic moment hangs down
Directly in the MTJ of substrate surface, in this configuration, (do not examined because two magnetospheric magnetocrystalline anisotropy are stronger
Consider shape anisotropy) so that its direction of easy axis is all perpendicular to layer surface.Under identical condition, component size can be done
Specific surface inner mold MTJ element is smaller, the magnetic polarization error of direction of easy axis can be made small, and MTJ element size subtracts
It is small required switching electric current is also accordingly reduced.On the other hand, in memory arrays, between neighboring vertical type MTJ safety
Away from can also be greatly reduced than face inner mold MTJ.So as to vertical-type STT-MRAM (pSTT-MRAM, perpendicular Spin-
Transfer Torque Magnetic Random Access Memory) have non-than face inner mold STT-MRAM, its integrated level
Often big room for promotion.
But in existing STT-MRAM structures, the MTJ element of each mnemon would generally connect a triode and make
For current direction selector, metal-oxide-semiconductor such as is used, by the conducting and cut-off of metal-oxide-semiconductor to realize conduct current, so as to pass through
Corresponding write current sets the high resistance and low resistance state of MTJ element, namely is written with storage information, and according to the big of read current
It is small to judge the Resistance states of MTJ element, namely read storage information.
For the inner mold STT-MRAM of face, size based on face inner mold MTJ element and its each other away from requirement, three poles
The size of pipe is not the main bottleneck of raising face inner mold STT-MRAM integrated levels, the size of triode is reduced in other words, for face
The lifting limitation of inner mold STT-MRAM integrated levels.And for vertical-type STT-MRAM situations on the contrary, vertical-type MTJ
The size of element and its each other away from having been greatly reduced than face inner mold MTJ element, the now lifting of integrated level almost takes completely
Certainly in the size of triode, even if using current state-of-the-art technique (line width), the size of triode is still much larger than vertical
Type MTJ element, while triode manufacturing process is relatively also more complicated, improves the manufacturing cost of product.
Therefore, those skilled in the art is directed to developing the STT-MRAM productions of a kind of highly integrated, high-performance, cost savings
Product.
The content of the invention
In view of the drawbacks described above of prior art, the invention provides a kind of cross matrix column magnetic RAM,
It includes some first guiding lines and some first guiding line intervals and some second guiding lines arranged in a crossed manner, and
Intersected some crossover nodes limited by some first guiding lines and some second guiding lines；It is each described
Crossover node is provided with Magnetic Memory unit, the Magnetic Memory unit respectively with the first guiding line at its residing crossover node and
Second guiding line electrically connects；The Magnetic Memory unit includes magnetoresistive element, the first diode and the two or two pole being connected in series
Pipe, and the polarity closure of first diode and second diode to the Magnetic Memory unit on the contrary, add
When carrying voltage, one in first diode and second diode be loaded forward voltage, another is loaded instead
To voltage；The magnetoresistive element can change its Resistance states by flowing through electric current therein.
Further, the magnetoresistive element includes face inner mold MTJ or vertical-type MTJ.
Common face inner mold MTJ includes：
Magnetic reference layer, the direction of magnetization of the magnetic reference layer is constant and magnetic anisotropy is parallel to layer surface；
Magnetic memory layer, the direction of magnetization of the Magnetic memory layer is variable and magnetic anisotropy is parallel to layer surface；
Tunnel barrier layer, the tunnel barrier layer is between the magnetic reference layer and the Magnetic memory layer and distinguishes
It is adjacent with the magnetic reference layer and the Magnetic memory layer.
Common vertical-type MTJ includes：
Magnetic reference layer, the direction of magnetization of the magnetic reference layer is constant and magnetic anisotropy is perpendicular to layer surface；
Magnetic memory layer, the direction of magnetization of the Magnetic memory layer is variable and magnetic anisotropy is perpendicular to layer surface；
Tunnel barrier layer, the tunnel barrier layer is between the magnetic reference layer and the Magnetic memory layer and distinguishes
It is adjacent with the magnetic reference layer and the Magnetic memory layer.
Further, first diode and second diode are formed by the film deposited.
Further, the patterning of first diode, second diode and the magnetoresistive element uses same
One piece of mask plate.
Further, first diode and second diode composition NPN pipes or PNP pipe, NPN pipes or PNP pipe
A pair of diodes connected back-to-back can be regarded as present invention also offers the reading/writing method of above-mentioned magnetic RAM, wherein
Following read-write operation is used for the Magnetic Memory unit of any crossover node：
Write operation：Voltage is write in loading on the first guiding line and the second guiding line corresponding to crossover node, caused to write
Electric current flows through corresponding magnetoresistive element to change its Resistance states；
Read operation：Read voltage is loaded on the first guiding line and the second guiding line corresponding to crossover node, produces and reads electricity
Stream, the read current are not enough to change the Resistance states of its magnetoresistive element flowed through.
Further, the write operation or during read operation, the voltage of writing makes first diode and the described 2nd 2
A forward conduction, another reverse breakdown in pole pipe.The reverse breakdown of diode mentioned herein, is limited to reverse
Voltage, which removes rear diode, can return to reset condition, without causing diode breakdown to be damaged.
The invention provides another cross matrix column magnetic RAM, it include some first guiding lines, with
Some first guiding line intervals and some second guiding lines arranged in a crossed manner, and by some first guiding lines and institute
Some second guiding lines are stated to intersect some crossover nodes limited；Each crossover node is provided with Magnetic Memory list
Member, the Magnetic Memory unit electrically connect with the first guiding line at its residing crossover node and the second guiding line respectively；The magnetic
Mnemon includes magnetoresistive element, the first diode and the second diode, and the negative electrode of first diode, described
The moon of the anode of two diodes and magnetoresistive element electrical connection, the anode of first diode and second diode
Pole electrically connects, i.e., the parallel-connection structure of described first diode and second diode electrically connects with the magnetoresistive element；Institute
Its Resistance states can be changed by flowing through electric current therein by stating magnetoresistive element.
Further, the magnetoresistive element includes face inner mold MTJ or vertical-type MTJ.
Further, first diode and second diode are formed by the film deposited.
Present invention also offers the reading/writing method of above-mentioned magnetic RAM, wherein remembering for the magnetic of any crossover node
Recall unit and use following read-write operation：
Write operation：Voltage is write in loading on the first guiding line and the second guiding line corresponding to crossover node, caused to write
Electric current flows through corresponding magnetoresistive element to change its Resistance states；
Read operation：Read voltage is loaded on the first guiding line and the second guiding line corresponding to crossover node, produces and reads electricity
Stream, the read current are not enough to change the Resistance states of its magnetoresistive element flowed through.
Further, the write operation or during read operation, the voltage of writing makes first diode and the described 2nd 2
A forward conduction, another reversely cut-off in pole pipe.
The cross matrix column magnetic RAM of the present invention, utilizes the opposite diode of a pair of polarity closures
(serial or parallel connection) substitutes triode as the current direction selector in Magnetic Memory unit, realizes the power supply network of complexity
Use simple staggered form power supply mode instead, so as to greatly simplify MRAM production technology, reduce cost, and can pole
The earth improves the integrated level of storage chip, especially for pSTT-MRAM products.
Design, concrete structure and the caused technique effect of the present invention are described further below with reference to accompanying drawing, with
It is fully understood from the purpose of the present invention, feature and effect.
Brief description of the drawings
Fig. 1 is a kind of structural representation of existing Magnetic Memory unit；
Fig. 2 is a kind of structural representation of the Magnetic Memory unit of cross matrix column magnetic RAM of the present invention；
Fig. 3 is the VA characteristic curve figure of series diode in Fig. 2；
Fig. 4 is the schematic diagram that magnetoresistive element in Fig. 2 is arranged to low resistance state；
Fig. 5 is the schematic diagram that magnetoresistive element in Fig. 2 is arranged to high-impedance state；
Fig. 6 is magnetoresistance cells read operation schematic diagram in Fig. 2；
Fig. 7 is a kind of structural representation of cross matrix column magnetic RAM of the present invention；
Fig. 8 is the structural representation of the different Magnetic Memory unit of 4 classes based on the present invention；
Fig. 9 is the structural representation of the Magnetic Memory unit of another cross matrix column magnetic RAM of the present invention
Figure；
Figure 10 is the VA characteristic curve figure of parallel diode in Fig. 9；
Figure 11 is the schematic diagram that magnetoresistive element in Fig. 9 is arranged to low resistance state；
Figure 12 is the schematic diagram that magnetoresistive element in Fig. 9 is arranged to high-impedance state；
Figure 13 is magnetoresistance cells read operation schematic diagram in Fig. 9.
Embodiment
In the description of embodiments of the present invention, it is to be understood that term " on ", " under ", "front", "rear", " left side ",
The orientation or position relationship of the instruction such as " right side ", " vertical ", " level ", " top ", " bottom " " interior ", " outer ", " clockwise ", " counterclockwise "
Based on orientation shown in the drawings or position relationship, to be for only for ease of the description present invention and simplifying description, rather than instruction or
Imply that signified device or element there must be specific orientation, with specific azimuth configuration and operation, therefore it is not intended that
Limitation of the present invention.
Embodiment one
Fig. 1 is a kind of structural representation of existing Magnetic Memory unit, and wherein Magnetic Memory unit 100 includes magnetoresistive element
101, and the metal-oxide-semiconductor 102 of series connection with it, flowed to by the conducting and cut-off of metal-oxide-semiconductor 102 come control electric current.It is involved herein
And magnetoresistive element generally comprise the magnetic reference layer being disposed adjacent successively, tunnel barrier layer and Magnetic memory layer and (form
MTJ), remaining film in the material for above layers and structure (multilayer or individual layer) and magnetoresistive element in addition to above-mentioned three layers
The setting of layer (if any), and the emphasis of non-invention, are not limited herein；Magnetoelectricity can be changed by loading corresponding electric current
The Resistance states of resistance element.Magnetoresistive element in the present embodiment accompanying drawing is typically represented using three-decker, simply means to show that it has
Mtj structure, it is not excluded that also have the situation of other film layers in magnetoresistive element.
Fig. 2 is a kind of structural representation of the Magnetic Memory unit of cross matrix column magnetic RAM of the present invention,
Wherein Magnetic Memory unit 200 includes magnetoresistive element 201, and the diode 202 and 203 of series connection with it, the He of diode 202
203 connections back-to-back, the negative electrode of diode 202 is connected with the negative electrode of diode 203 in this implementation.Magnetoresistive element 201 wraps
MTJ containing vertical-type, be embodied as the three-decker of magnetoresistive element 201 in Fig. 2, from top to bottom respectively Magnetic memory layer,
Tunnel barrier layer and magnetic reference layer.Magnetic Memory unit 200 is controlled by the characteristic for the diode 202 and 203 being connected in series
Current direction, the diode 202 and 203 being connected in series have VA characteristic curve as shown in Figure 3, Magnetic Memory unit 200
Read-write mode is as follows：
Write operation (low resistance state)：As shown in figure 4, load forward voltage on Magnetic Memory unit 200, when acting on diode
Pressure drop Vw+ on 202 and 203 forms current path when diode 202 and 203 is distinguished forward conduction and reverse breakdown, flows through
The electric current I of Magnetic Memory unit 200It is low, make the Magnetic memory layer of magnetoresistive element 201 under spin-transfer torque effect, the direction of magnetization
It is parallel with the direction of magnetization of magnetic reference layer, so as to which magnetoresistive element 201 is set to low resistance state.
Write operation (high-impedance state)：As shown in figure 5, load backward voltage on Magnetic Memory unit 200, when acting on diode
Pressure drop Vw- on 202 and 203 forms current path when diode 202 and 203 is distinguished reverse breakdown and forward conduction, flows through
The electric current I of Magnetic Memory unit 200It is high, make the Magnetic memory layer of magnetoresistive element 201 under spin-transfer torque effect, the direction of magnetization
It is antiparallel with the direction of magnetization of magnetic reference layer, so as to which magnetoresistive element 201 is set to high-impedance state.
Read operation：As shown in fig. 6, load forward voltage on Magnetic Memory unit 200, when acting on diode 202 and 203
On pressure drop Vr form current path when diode 202 and 203 is distinguished forward conduction and reverse breakdown, wherein electric current Ir according to
Different size is presented in the high low resistance state of magnetoresistive element 201, it is achieved thereby that the reading for the inner storag information of Magnetic Memory unit 200
Take.
Vw+, Vw- and the Vr being carried on diode 202 and 203 are shown in Fig. 3, it is generally relative for Vw+, Vw-
In longitudinal axis I symmetrical (identical with 203 specifications based on diode 202), and I need to be metIt is lowAnd IIt is highSize be enough magnetoelectricity respectively
Resistance element 201 is arranged to low resistance state and high-impedance state.Vr value is less than Vw+, makes Ir size be not enough to change magnetoresistive element
201 Resistance states, specifically it is not enough to be set to low resistance state when magnetoresistive element is in high-impedance state.
Fig. 7 shows the structural representation of the cross matrix column magnetic RAM formed using Magnetic Memory unit 200
Figure, including wordline 300 and bit line 400, schematically show only 3 wordline and 3 bit lines, is wordline respectively in Fig. 7
301st, 302,303 and bit line 401,402,403.Wordline 300 and bit line 400 are arranged in a crossed manner, form some crossover nodes (in Fig. 7
Structure there are 9 nodes).Be provided with a Magnetic Memory unit at each node, the both ends of Magnetic Memory unit respectively with institute
Respective word at crossover node is connected with bit line, i.e., Magnetic Memory unit 200 as shown in Figure 7 is arranged on by wordline
302 and bit line 402 crossover node at, and the both ends of Magnetic Memory unit 200 connect wordline 302 and bit line 402 respectively.
Above structure can also carry out all different transforms, including (1) by the position of magnetoresistive element 201 and diode 202 and 203
Put and be exchanged, i.e., diode 202 and 203 is prepared after magnetoresistive element 201；(2) in magnetoresistive element 201 MTJ each layer
Order can be successively from top to bottom magnetic reference layer, tunnel barrier layer and Magnetic memory layer or Magnetic memory layer,
Tunnel barrier layer and magnetic reference layer；(3) it can also be both that diode 202, which with 203 can be that both negative electrodes are connected,
Anode be connected；(4) diode 202 and 203 can also be respectively arranged at the both sides up and down of magnetoresistive element 201；(5) directly
Using NPN pipes or PNP pipe, i.e. the common anode of diode 202 and 203 or negative electrode, so as to Magnetic Memory unit can become swap out it is a variety of
Different structures.Several different magnetoresistance cells structures are schematically listed in Fig. 8 and (are wherein not directed to the suitable of each layers of MTJ
Sequence changes).
Read-write for each Magnetic Memory unit in Fig. 7, only need to be by loading read-write voltage between corresponding wordline and bit line
, read-write mode is as it was previously stated, repeat no more.For the read-write mode of each Magnetic Memory unit in Fig. 8 and foregoing read-write side
Formula is similar, is again based on the Resistance states of the C-V characteristic and magnetoresistive element of above-mentioned series diode under the function of current and becomes
Change.
On the other hand, for further optimised devices size, the diode in the present embodiment is formed using bilayer film, such as
After depositing the base materials such as Si, Ge, SiGe or SiC, II, III valency element or V, VI valency element are correspondingly adulterated, so as to form two phases
PN, NP knot mutually connected, or two close to diode can also use three-layer thin-film formed (NPN or PNP, it is in-between
Semiconductor layer is that two diodes share).Similarly, magnetoresistive element is also based on thin film stack formation, so as to
With after the completion of all thin-film depositions of diode 202 and 203 and magnetoresistive element are formed, while above-mentioned plural layers are entered
Row photoetching/lithography, one side device size greatly reduce than prior art, another aspect magnetoresistive element and two poles
The patterning of pipe 202 and 203 only needs to use one piece of mask plate, and cost has been greatly reduced while improving chip integration.
Embodiment two
Fig. 9 is a kind of structural representation of the Magnetic Memory unit of cross matrix column magnetic RAM of the present invention,
Difference with embodiment one is, diode 202 and 203 is arranged to be connected in parallel, and the negative electrode of diode 202, diode
203 anode is connected with magnetoresistive element 201, and the anode of diode 202 is connected with the negative electrode of diode 203.
Magnetic Memory unit 200 is flowed to by the characteristic for the diode 202 and 203 being connected in parallel come control electric current, and parallel connection is even
The diode 202 and 203 connect has a VA characteristic curve as shown in Figure 10, and the read-write mode of Magnetic Memory unit 200 is as follows：
Write operation (low resistance state)：As shown in figure 11, forward voltage is loaded on Magnetic Memory unit 200, when acting on two poles
Pressure drop Vw+ on pipe 202 and 203 makes to be formed during the forward conduction of diode 203 (diode 202 still in do not turn on state)
Current path, flow through the electric current I of Magnetic Memory unit 200It is low, the Magnetic memory layer of magnetoresistive element 201 is made in spin-transfer torque
Under, the direction of magnetization is parallel with the direction of magnetization of magnetic reference layer, so as to which magnetoresistive element 201 is set to low resistance state.
Write operation (high-impedance state)：As shown in figure 12, backward voltage is loaded on Magnetic Memory unit 200, when acting on two poles
Pressure drop Vw- on pipe 202 and 203 makes to be formed during the forward conduction of diode 202 (diode 203 still in do not turn on state)
Current path, flow through the electric current I of Magnetic Memory unit 200It is high, the Magnetic memory layer of magnetoresistive element 201 is made in spin-transfer torque
Under, the direction of magnetization of the direction of magnetization and magnetic reference layer is antiparallel, so as to which magnetoresistive element 201 is set to high-impedance state.
Read operation：As shown in figure 13, forward voltage is loaded on Magnetic Memory unit 200, when acting on the He of diode 202
Pressure drop Vr on 203, which makes that during the forward conduction of diode 203 (diode 202 still in do not turn on state) electric current can be formed, to be led to
Different size is presented according to the high low resistance state of magnetoresistive element 201 in road, wherein electric current Ir, it is achieved thereby that for Magnetic Memory unit
The reading of 200 inner storag informations.
Vw+, Vw- and the Vr being carried on diode 202 and 203 are shown in Figure 10, it is generally relative for Vw+, Vw-
In longitudinal axis I symmetrical (identical with 203 specifications based on diode 202), and I need to be metIt is lowAnd IIt is highSize be enough magnetoelectricity respectively
Resistance element 201 is arranged to low resistance state and high-impedance state.Vr value is less than Vw+, makes Ir size be not enough to change magnetoresistive element
201 Resistance states, specifically it is not enough to be set to low resistance state when magnetoresistive element is in high-impedance state.With in embodiment one
Characteristic curve is compared, and Vw+, Vw- and Vr in the present embodiment can choose smaller magnitude of voltage (the forward conduction voltage of diode
It is relatively small), it is more excellent as MRAM current direction selector, performance.
It is equally possible that using the cross matrix column magnetic as shown in Figure 7 of the Magnetic Memory cell formation in the present embodiment
Property random access memory.
In addition, (the M+N in a storage array with M × N number of storage member>>1), i.e. M bars bit line and N bar wordline, such as
The low resistance and high resistance of current direction selector are respectively RLAnd RH, then：
1 must be much smaller than；So as to need to meet：
Therefore in the design process of the cross matrix column magnetic RAM of the present invention, to reducing bypass leakage
Consideration is very important.According to Semiconductive Theory, there is as follows electric current (I) with the voltage (V) being exerted by above it on PN junction
Relation：
N wherein in index is so-called ideal factor (ideality factor), with PN junction fault in material and carrier
It is compound relevant.As the application in the present invention, n>1 is preferred (to ensure that I-V electric currents after forward conduction have a ratio with voltage
Compared with the rate of change of mitigation.Other IoIt is the saturation or leakage current of PN junction, its carrier concentration (n with semi-conducting materiali)、PN
It is relevant to tie the factors such as contact area (A)：
In order to which diode has a less leakage current, it should as far as possible using carrier concentration (ni) relatively low semiconductor
Material, and less PN junction contact area (A).
Preferred embodiment of the invention described in detail above.It should be appreciated that one of ordinary skill in the art without
Creative work can is needed to make many modifications and variations according to the design of the present invention.Therefore, all technologies in the art
Personnel are available by logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Technical scheme, all should be in the protection domain being defined in the patent claims.
Claims (9)
1. a kind of magnetic RAM, it is characterised in that including between some first guiding lines and some first guiding lines
Every and some second guiding lines arranged in a crossed manner, it is and mutual by some first guiding lines and some second guiding lines
Intersect some crossover nodes limited；Each crossover node is provided with Magnetic Memory unit, the Magnetic Memory unit point
Do not electrically connected with the first guiding line at its residing crossover node and the second guiding line；The Magnetic Memory unit includes being connected in series
Magnetoresistive element, the first diode and the second diode, and the polarity of first diode and second diode
Closure is opposite；The magnetoresistive element includes face inner mold MTJ or vertical-type MTJ, the magneto-resistor
Element can change its Resistance states by flowing through electric current therein.
2. magnetic RAM as claimed in claim 1, it is characterised in that first diode and the two or two pole
Pipe is formed by the film deposited.
3. magnetic RAM as claimed in claim 2, it is characterised in that first diode, the two or two pole
The patterning of pipe and the magnetoresistive element uses same mask plate.
4. magnetic RAM as claimed in claim 1, it is characterised in that first diode and the two or two pole
Pipe composition NPN pipes or PNP pipe.
5. the reading/writing method of the magnetic RAM as described in claim 1-4 is any, it is characterised in that for any intersection
The Magnetic Memory unit of node uses following read-write operation：
Write operation：Voltage, caused write current are write in loading on the first guiding line and the second guiding line corresponding to crossover node
Corresponding magnetoresistive element is flowed through to change its Resistance states；
Read operation：Read voltage is loaded on the first guiding line and the second guiding line corresponding to crossover node, produces read current, institute
The size for stating read current is not enough to change the Resistance states of its magnetoresistive element flowed through.
6. reading/writing method as claimed in claim 5, it is characterised in that when the write operation or read operation, the voltage of writing makes
A forward conduction, another reverse breakdown in first diode and second diode.
7. a kind of magnetic RAM, it is characterised in that including between some first guiding lines and some first guiding lines
Every and some second guiding lines arranged in a crossed manner, it is and mutual by some first guiding lines and some second guiding lines
Intersect some crossover nodes limited；Each crossover node is provided with Magnetic Memory unit, the Magnetic Memory unit point
Do not electrically connected with the first guiding line at its residing crossover node and the second guiding line；The Magnetic Memory unit includes magneto-resistor member
Part, the first diode and the second diode, and the anode of the negative electrode of first diode, second diode and described
Magnetoresistive element electrically connects, the negative electrode electrical connection of the anode of first diode and second diode；The magneto-resistor
Element can change its Resistance states by flowing through electric current therein.
8. the reading/writing method of magnetic RAM as claimed in claim 7, it is characterised in that for any crossover node
Magnetic Memory unit uses following read-write operation：
Write operation：Voltage, caused write current are write in loading on the first guiding line and the second guiding line corresponding to crossover node
Corresponding magnetoresistive element is flowed through to change its Resistance states；
Read operation：Read voltage is loaded on the first guiding line and the second guiding line corresponding to crossover node, produces read current, institute
The size for stating read current is not enough to change the Resistance states of its magnetoresistive element flowed through.
9. reading/writing method as claimed in claim 8, it is characterised in that when the write operation or read operation, the voltage of writing makes
A forward conduction, another reversely cut-off in first diode and second diode.
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| CN107958681A (en) * | 2016-10-17 | 2018-04-24 | 上海磁宇信息科技有限公司 | A kind of MRAM chip |
| US20230165014A1 (en) * | 2020-05-15 | 2023-05-25 | Institute Of Microelecttronics, Chinese Academy Of Sciences | Two-dimensional material-based selector, memory unit, array, and method of operating the same |
| CN112420096A (en) * | 2020-11-20 | 2021-02-26 | 复旦大学 | Spin orbit torque magnetic random access memory without MOS tube |
| US11929105B2 (en) | 2020-12-29 | 2024-03-12 | Changxin Memory Technologies, Inc. | Method of fabricating a semiconductor device |
| CN114694703A (en) * | 2020-12-29 | 2022-07-01 | 长鑫存储技术有限公司 | Magnetic memory and read-write method thereof |
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| CN1983618A (en) * | 2005-12-12 | 2007-06-20 | 日立环球储存科技荷兰有限公司 | Unipolar resistance random access memory device and vertically stacked architecture |
| CN101847647A (en) * | 2009-02-27 | 2010-09-29 | 夏普株式会社 | Nonvolatile semiconductor memory device and manufacturing method for same |
| CN103247655A (en) * | 2012-02-13 | 2013-08-14 | 爱思开海力士有限公司 | Variable resistive memory device and method of fabricating and driving the same |
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| CN1983618A (en) * | 2005-12-12 | 2007-06-20 | 日立环球储存科技荷兰有限公司 | Unipolar resistance random access memory device and vertically stacked architecture |
| CN101847647A (en) * | 2009-02-27 | 2010-09-29 | 夏普株式会社 | Nonvolatile semiconductor memory device and manufacturing method for same |
| CN103247655A (en) * | 2012-02-13 | 2013-08-14 | 爱思开海力士有限公司 | Variable resistive memory device and method of fabricating and driving the same |
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