CN107221596A - A kind of magnetic element, preparation method and magnetic memory device for being used to realize spin-torque transmission switching - Google Patents
A kind of magnetic element, preparation method and magnetic memory device for being used to realize spin-torque transmission switching Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N50/00—Galvanomagnetic devices
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H—ELECTRICITY
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Abstract
The invention discloses a kind of magnetic element, preparation method and magnetic memory device for being used to realize spin-torque transmission switching；The structure of double magnetically fixed layers of pinning perpendicular magnetic anisotropy of magnetic element, nonmagnetic spacer layer and perpendicular magnetic anisotropy magnetic free layer.Wherein perpendicular magnetic anisotropy magnetic free layer is located between double-deck nonmagnetic spacer layer.Perpendicular magnetic anisotropy magnetic free layer has perpendicular to the demagnetization energy in membrane plane direction and corresponding to the anisotropy energy of perpendicular magnetic anisotropy.Its perpendicular magnetic anisotropy can be more than the demagnetization energy perpendicular to membrane plane direction.When write current is by the magnetic element, by spin-torque transmission effects, its perpendicular magnetic anisotropy magnetic free layer may be implemented in be switched to reach the purpose of magnetic storage between the parallel and antiparallel magnetic states of in-plane.
Description
Technical field
The invention belongs to magnetic storage technology field, it is used to realize spin-torque transmission switching more particularly, to a kind of
Magnetic element, preparation method and magnetic memory device.
Background technology
Perpendicular magnetic anisotropic magnetic tunnel-junction (MTJ) is the one of magnetoresistance effect Spin Valve device or magnetic storage bit location
Individual core component.It is formed by thin dielectric film and by its two ferromagnetic layer with perpendicular magnetic anisotropic isolated
The tunneling engagement of high spin-polarization.The application of thin dielectric film allows electronics to be tunnelled to another ferromagnetic layer from a ferromagnetic layer.
The Parallel and antiparallel formed in the occasion of crystal type thin dielectric film, ferromagnetic layer under external magnetic field or spin-torque transmission effect
State.Thus electronic band structure produces asymmetric conductive channel (conductive channels) and conductance transmission, and is formed
Huge tunnel magnetoresistive (TMR) effect.In a typical structure configuration with perpendicular magnetic anisotropic, the first ferromagnetic layer
The perpendicular magnetization of (magnetic free layer) can be rotated freely in externally-applied magnetic field, and the perpendicular magnetization of the second ferromagnetic layer is fixed or followed closely
Prick to be used as spin polarized device.The magnetic tunnel-junction is connected to the semiconductor transistor (electricity of the on-off action by one or more
Road) (CMOS) to constitute STT-MRAM storage bit unit.The perpendicular magnetization direction of wherein the first ferromagnetic layer is due to spin-torque
Transmission effects individually can rotate or switch.Compared to its arranged anti-parallel, if the perpendicular magnetization direction of two ferromagnetic layers is parallel
Arrangement, then conduct electronics and will be more likely to by the tunneling insulating barrier of tunnel-effect.Therefore, the magnetic tunnel-junction can realize high and
Mutually switch between the state of low resistance two, and (non-volatile) records store data information in a non-volatile manner.
By spin-torque transmit lure magnetize free layer perpendicular magnetization rotate or switch needed for spin polarized current with Lai
It is proportional from this layer of corresponding perpendicular magnetic anisotropic (perpendicular anisotropy field).Vertically
Magnetized switching characteristic directly determines the writability of STT-MRAM storage bit unit (storage bit cell)
(writeability).Reduction switching current density Jc is to reduce semiconductor transistor CMOS sizes, realizes low-power consumption and highly dense
Spend STT-MRAM key.Meanwhile, perpendicular anisotropy field of the heat endurance also proportional to magnetic free layer of magnetic element, it determines
Determine holding phase (data retention) of the data message in STT-MRAM memories.The size of the parameter depends on STT-
The memory capacity of mram memory, using and use condition of work.Generally speaking, in reduction write switch current density and raising magnetic
Property device heat endurance between the two, it is necessary to which balanced or reasonable tradeoff is to meet magnetic device and STT-MRAM memory optimizations
And normal operation.With the reduction of semiconductor technology node, its spin-torque transmission switching current or reset current are steady in same heat
Generally remained during qualitative design constant.In Practical Project practice, its technological challenge is still reduction spin-torque transmission switch
Electric current or reset current and simultaneously keep design required by heat endurance.
The content of the invention
For the defect of prior art, the invention provides a kind of magnetic member for being used to realize spin-torque transmission switching
Part, its object is to can realize the high speed and high record density of the accumulator system under big signal conditioning.
The invention provides a kind of magnetic element for being used to realize spin-torque transmission switching, the magnetic element includes：
The magnetically fixed layer of first perpendicular magnetic anisotropy, with the demagnetization energy perpendicular to membrane plane direction and corresponding to magnetic vertical anisotropy
Anisotropy energy, and magnetic vertical anisotropy energy be more than perpendicular to membrane plane direction demagnetization energy；First non-magnetic sexual isolation
Layer, is attached on the magnetically fixed layer of the first perpendicular magnetic anisotropy；Perpendicular magnetic anisotropy magnetic free layer, is attached to described first non-
On magnetic isolation layer, the perpendicular magnetic anisotropy magnetic free layer has perpendicular to the demagnetization energy in membrane plane direction and corresponding to magnetic
The anisotropy energy of perpendicular magnetic anisotropy, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；The
Two nonmagnetic spacer layers, are attached on the perpendicular magnetic anisotropy magnetic free layer；The magnetically fixed layer of second perpendicular magnetic anisotropy, attachment
In on second nonmagnetic spacer layers, the magnetically fixed layer of the second perpendicular magnetic anisotropy has moving back perpendicular to membrane plane direction
Magnetic energy and corresponding to the anisotropic anisotropy energy of magnetic vertical, and magnetic vertical anisotropy energy is more than perpendicular to membrane plane
The demagnetization energy in direction；And coating, it is attached on the magnetically fixed layer of the second perpendicular magnetic anisotropy, and and semiconductor transistor
Circuit is connected；When write current is by the magnetic element, perpendicular magnetic anisotropy magnetic free layer can pass through spin-torque transmission effects
Switching or switch between stable magnetic state.
The present invention provides perpendicular magnetic anisotropic magnetic tunnel-junction (DMTJ) and the magnetic thus constituted with double pinned structures
Property storage bit unit and accumulator system constructing plan, further to reduce spin-torque transmission switching current and realize STT-
Mram memory high record density.Compared to the perpendicular magnetic anisotropic magnetic tunnel-junction configuration of single pinned structure, with antiparallel
The perpendicular magnetization of double pinning ferromagnetic layers of arrangement adds the spin-torque transmission effects acted on magnetic free layer.Reduce certainly
Turn-knob square transmits switching current or the reset current of record storage.Secondly, by vertical each in optimization design storage bit unit
Anisotropy magnetic tunnel-junction (DMTJ) structure, is reducing spin-torque transmission switching current or while reset current, keep magnetic with
The stable heat endurance of machine access memory.By applying, the present invention opens the dependent magnetic element shown and accumulator system is integrated
Method and system, to realize the high speed and high record density of the accumulator system under big signal conditioning.
Present invention also offers a kind of magnetic element for being used to realize spin-torque transmission switching, it is characterised in that including：
The magnetically fixed layer of first perpendicular magnetic anisotropy, with the demagnetization energy perpendicular to membrane plane direction and corresponding to magnetic vertical anisotropy
Anisotropy energy, and magnetic vertical anisotropy energy be more than perpendicular to membrane plane direction demagnetization energy；Between first nonmagnetic layer
Coupling layer, is attached on the magnetically fixed layer of the first perpendicular magnetic anisotropy；First perpendicular magnetic anisotropy magnetic reference layer, is attached to institute
State between the first nonmagnetic layer on coupling layer, and pass through coupling layer between the first nonmagnetic layer and the magnetically fixed layer of the first perpendicular magnetic anisotropy
Constitute antiferromagnetic coupling structure；The first perpendicular magnetic anisotropy magnetic reference layer have perpendicular to membrane plane direction demagnetization can and
Corresponding to the anisotropic anisotropy energy of magnetic vertical, and magnetic vertical anisotropy energy is more than perpendicular to membrane plane direction
Demagnetize energy；First intermediate layer, is attached in the first perpendicular magnetic anisotropy magnetic reference layer；High spinning polarizability magnetic is with reference to straton
Layer, is attached on first intermediate layer, and formed by first intermediate layer with the first perpendicular magnetic anisotropy magnetic reference layer
The perpendicular magnetic anisotropy composite magnetic of ferromagnetic coupling is with reference to Rotating fields；First barrier layer includes MgO crystallizing layers, is attached to
The high spinning polarizability magnetic is with reference in sublayer；The free sublayer of high spinning polarizability magnetic, is attached to the first tunnelling gesture
Barrier layer is included on MgO crystallizing layers；Second intermediate layer, is attached in the free sublayer of high spinning polarizability magnetic；It is vertical each to
Different in nature magnetic free layer, is attached on second intermediate layer, and free by second intermediate layer and high spinning polarizability magnetic
Sublayer carries out Ferromagnetic coupling formation composite magnetic free layer, and the perpendicular magnetic anisotropy magnetic free layer has flat perpendicular to film
The demagnetization energy in face direction and corresponding to the anisotropic anisotropy energy of magnetic vertical, and magnetic vertical anisotropy energy is more than and hangs down
Directly in the demagnetization energy in membrane plane direction；Second barrier layer, is attached on the perpendicular magnetic anisotropy magnetic free layer, including
MgO crystallizing layers；The magnetically fixed layer of second perpendicular magnetic anisotropy, is attached on second barrier layer, with flat perpendicular to film
The demagnetization energy in face direction and corresponding to the anisotropic anisotropy energy of magnetic vertical, and magnetic vertical anisotropy energy is more than and hangs down
Directly in the demagnetization energy in membrane plane direction, the magnetically fixed layer of the second perpendicular magnetic anisotropy and perpendicular magnetic anisotropy composite magnetic reference layer
Perpendicular magnetization arranged anti-parallel, and coating each other, is attached on the magnetically fixed layer of the second perpendicular magnetic anisotropy, and with half
Conductor transistor circuit is connected；Wherein the first intermediate layer and the second intermediate layer are magnetic central layer or nonmagnetic intermediate layer；When writing
When electric current is by the magnetic element, perpendicular magnetic anisotropy magnetic free layer can be by spin-torque transmission effects in stable magnetic
Switch between state or switch.
Present invention also offers a kind of magnetic element for being used to realize spin-torque transmission switching, it is characterised in that including：
The magnetically fixed layer of first perpendicular magnetic anisotropy, with the demagnetization energy perpendicular to membrane plane direction and corresponding to magnetic vertical anisotropy
Anisotropy energy, and magnetic vertical anisotropy energy be more than perpendicular to membrane plane direction demagnetization energy；Between first nonmagnetic layer
Coupling layer, is attached on the magnetically fixed layer of the first perpendicular magnetic anisotropy；First perpendicular magnetic anisotropy magnetic reference layer, is attached to institute
State between the first nonmagnetic layer on coupling layer, the first perpendicular magnetic anisotropy magnetic reference layer has moving back perpendicular to membrane plane direction
Magnetic energy and corresponding to the anisotropic anisotropy energy of magnetic vertical, and magnetic vertical anisotropy energy is more than perpendicular to membrane plane
The demagnetization energy in direction；The coupling layer and described first vertical each between the magnetically fixed layer of the first perpendicular magnetic anisotropy, the first nonmagnetic layer
Anisotropy magnetic reference layer formation antiferromagnetic coupling structure；First intermediate layer, is attached to the first perpendicular magnetic anisotropy magnetic reference
On layer；First high spinning polarizability magnetic is attached on first intermediate layer, by the first perpendicular magnetic anisotropy magnetic with reference to sublayer
Reference layer, the first intermediate layer and the first high spinning polarizability magnetic are combined with reference to the perpendicular magnetic anisotropy of sublayer formation ferromagnetic coupling
Type magnetic reference layer；First barrier layer, is attached in the first high spinning polarizability magnetic reference sublayer, including MgO knots
Crystal layer；The first free sublayer of high spinning polarizability magnetic, is attached on first barrier layer；Second intermediate layer, attachment
In in the free sublayer of the first high spinning polarizability magnetic；Perpendicular magnetic anisotropy magnetic free layer, is attached in the middle of described second
On layer, the perpendicular magnetic anisotropy magnetic free layer have perpendicular to membrane plane direction demagnetization energy and corresponding to magnetic vertical it is each to
The anisotropy energy of the opposite sex, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；3rd intermediate layer,
It is attached on the perpendicular magnetic anisotropy magnetic free layer；The second free sublayer of high spinning polarizability magnetic, is attached to the described 3rd
On intermediate layer；Second barrier layer, is attached in the free sublayer of the second high spinning polarizability magnetic, including MgO crystallizations
Layer；Second high spinning polarizability magnetic is attached on second barrier layer with reference to sublayer；4th intermediate layer, is attached to
The second high spinning polarizability magnetic is with reference in sublayer；Second perpendicular magnetic anisotropy magnetic reference layer, is attached in the described 4th
On interbed, the second perpendicular magnetic anisotropy magnetic reference layer has perpendicular to the demagnetization energy in membrane plane direction and hung down corresponding to magnetic
Straight anisotropic anisotropy energy, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；Second
Coupling layer between nonmagnetic layer, is attached in the second perpendicular magnetic anisotropy magnetic reference layer；Second perpendicular magnetic anisotropy is magnetically fixed
Layer, is attached between second nonmagnetic layer on coupling layer, the magnetically fixed layer of the second perpendicular magnetic anisotropy has perpendicular to film
The demagnetization energy of in-plane and corresponding to the anisotropic anisotropy energy of magnetic vertical, and magnetic vertical anisotropy energy is more than
Demagnetization energy perpendicular to membrane plane direction；And coating, it is attached on the magnetically fixed layer of the second perpendicular magnetic anisotropy, and with
Semiconductor transistor circuitry is connected；Wherein the first intermediate layer, the second intermediate layer, the 3rd intermediate layer and the 4th intermediate layer is in magnetic
Interbed or nonmagnetic intermediate layer；When write current is by magnetic element, perpendicular magnetic anisotropy magnetic free layer can pass through spin-torque
Transmission effects switching or switch between stable magnetic state.
Present invention also offers a kind of magnetic element for being used to realize spin-torque transmission switching, including：First is vertical each
The magnetically fixed layer of anisotropy, with the demagnetization energy perpendicular to membrane plane direction and corresponding to the anisotropic anisotropy of magnetic vertical
Can, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；Coupling layer between first nonmagnetic layer, attachment
In on the magnetically fixed layer of the first perpendicular magnetic anisotropy；First perpendicular magnetic anisotropy magnetic reference layer, is attached to first non-magnetic
Property layer coupling layer on, the first perpendicular magnetic anisotropy magnetic reference layer has the demagnetization energy and correspondingly perpendicular to membrane plane direction
In the anisotropic anisotropy energy of magnetic vertical, and magnetic vertical anisotropy energy is more than the demagnetization perpendicular to membrane plane direction
Energy；First intermediate layer, is attached in the first perpendicular magnetic anisotropy magnetic reference layer；First high spinning polarizability magnetic is with reference to straton
Layer, is attached on first intermediate layer；First barrier layer, is attached to the first high spinning polarizability magnetic with reference to straton
On layer, including MgO crystallizing layers；The first free sublayer of high spinning polarizability magnetic, is attached on first barrier layer；
Second intermediate layer, is attached in the free sublayer of the first high spinning polarizability magnetic；First perpendicular magnetic anisotropy magnetic libron
Layer, is attached on second intermediate layer, and ferromagnetic by the second intermediate layer and the first free sublayer of high spinning polarizability magnetic
Property couples to form the first composite magnetic free layer；Coupling layer between second nonmagnetic layer, is attached to first perpendicular magnetic anisotropy
On magnetic libron；The second free sublayer of perpendicular magnetic anisotropy magnetic, is attached between second nonmagnetic layer on coupling layer, and have
Perpendicular to the demagnetization energy in membrane plane direction and corresponding to the anisotropic anisotropy energy of magnetic vertical, magnetic vertical anisotropy
The demagnetization energy perpendicular to membrane plane direction can be more than；3rd intermediate layer, is attached to the second perpendicular magnetic anisotropy magnetic libron
On layer；The second free sublayer of high spinning polarizability magnetic, is attached on the 3rd intermediate layer, and passes through the 3rd intermediate layer and the
The free sublayer of two perpendicular magnetic anisotropy magnetic carries out Ferromagnetic coupling the second composite magnetic free layer of formation, wherein, first is combined
Type magnetic free layer and the second composite magnetic free layer formation anti-ferromagnetism coupled structure；Second barrier layer, is attached to described
In the second free sublayer of high spinning polarizability magnetic, including MgO crystallizing layers；Second high spinning polarizability magnetic is attached with reference to sublayer
In on second barrier layer；4th intermediate layer, is attached to the second high spinning polarizability magnetic with reference in sublayer；
Second perpendicular magnetic anisotropy magnetic reference layer, is attached on the 4th intermediate layer, with the demagnetization energy perpendicular to membrane plane direction
With corresponding to the anisotropic anisotropy energy of magnetic vertical, magnetic vertical anisotropy energy is more than perpendicular to membrane plane direction
Demagnetization energy, and pass through the 4th intermediate layer and the second high spinning polarizability magnetic with reference to the second of sublayer formation ferromagnetic coupling type
Perpendicular magnetic anisotropy composite magnetic reference layer；Coupling layer between 3rd nonmagnetic layer, is attached to the second perpendicular magnetic anisotropy magnetic
In reference layer；The magnetically fixed layer of second perpendicular magnetic anisotropy, is attached between the 3rd nonmagnetic layer on coupling layer, with perpendicular to
The demagnetization energy in membrane plane direction and corresponding to the anisotropic anisotropy energy of magnetic vertical, magnetic vertical anisotropy energy is more than
Demagnetization energy perpendicular to membrane plane direction, and pass through coupling layer between the 3rd nonmagnetic layer and the second perpendicular magnetic anisotropy composite magnetic
Reference layer formation antiferromagnetic coupling structure, the perpendicular magnetization of first and second perpendicular magnetic anisotropy composite magnetic reference layer is put down each other
Row arrangement；And coating, it is attached on the magnetically fixed layer of the second perpendicular magnetic anisotropy, and connect with semiconductor transistor circuitry
Connect；Wherein the first intermediate layer, the second intermediate layer, the 3rd intermediate layer and the 4th intermediate layer are magnetic central layer or non magnetic centre
Layer；When write current is by the magnetic element, perpendicular magnetic anisotropy magnetic free layer can be by spin-torque transmission effects stable
Magnetic state between switching or switch.
In the present invention, high spinning polarizability specifically refer to semi-metallic spin polarizability may be up to value 1.0. but
It is that the value is far below its threshold value in practical systems.At this stage according to different definition or including existing or new material experiment body
System, high spinning polarizability can refer to that spin polarizability reaches 0.3-0.6, even more than 0.7 value.
Further, perpendicular magnetic anisotropy magnetic free layer, the free sublayer of perpendicular magnetic anisotropy magnetic, perpendicular magnetic anisotropy magnetic
In reference layer, perpendicular magnetic anisotropy magnetic reference sublayer, the magnetically fixed layer of perpendicular magnetic anisotropy and the magnetically fixed sublayer of perpendicular magnetic anisotropy,
At least one is included by magnesium-yttrium-transition metal Co, Fe, Ni or their alloy and precious metals ag, Au, Pt, and Pd interactions are formed
, the multi-layer film structure with [Cot1/Pt t2] n or [Cot1/Pd t2] n configurations；And multi-layer film structure is including ultrathin more
Film structure, is cured as ordered alloy structure, and produce perpendicular magnetic anisotropic in high-temperature heat treatment；Wherein n >=1.
Wherein, the ultrathin type in ultrathin multi-layer film structure specifically refer to be as thin as less than 0.1 nanometer (or《1A)；High warm
Processing specifically refers to up to 600C treatment temperature.But in device technology, it is often referred to 200-400C more practical significances.
Constitute the invention provides perpendicular magnetic anisotropic magnetic tunnel-junction (DMTJ) with double pinned structures and thus
Magnetic storage bit location and accumulator system, further to reduce spin-torque transmission switching current and realize that STT-MRAM is stored
Device high record density.The perpendicular magnetic anisotropic magnetic tunnel-junction (DMTJ) of this pair of pinned structure is by double pinning perpendicular magnetic anisotropy magnetic
Fixed bed (PL, PL '), perpendicular magnetic anisotropy magnetic free layer (FL) and the nonmagnetic spacer layers or thin dielectric film for isolating the above two
(SP1, SP2) composition.Wherein, the perpendicular magnetization of double pinning ferromagnetic layers is fixed or pinning is so that as spin polarized device, it magnetizes
Can have and be parallel to each other or antiparallel sequence.And (magnetic is certainly for the second ferromagnetic layer positioned at perpendicular magnetic anisotropic magnetic tunnel-junction center
By layer) perpendicular magnetization can be rotated freely in externally-applied magnetic field.Its perpendicular magnetization direction can due to spin-torque transmission effects
Individually rotate or switch.Compared to the perpendicular magnetic anisotropic magnetic tunnel-junction configuration of single pinned structure, with arranged anti-parallel
The perpendicular magnetization of double pinning ferromagnetic layers adds the spin-torque transmission effects acted on magnetic free layer.Reduce spin-torque
Transmit switching current or the reset current of record storage.
Secondly, by perpendicular magnetic anisotropy magnetic tunnel-junction (DMTJ) structure in optimization design storage bit unit, magnetic is strengthened
The perpendicular magnetic anisotropy of free layer, improves its damping characteristic and lifts the spin-torque transmission of the perpendicular magnetic anisotropy magnetic tunnel-junction
Efficiency, so as to solve MAGNETIC RANDOM ACCESS MEMORY (STT-MRAM) technological difficulties.In reduction spin-torque transmission switching current
Or while reset current, the heat endurance for keeping MAGNETIC RANDOM ACCESS MEMORY stable.By opening the correlation shown using the present invention
Magnetic element and the integrated method and system of accumulator system, may be implemented in the high speed and height of accumulator system under big signal conditioning
Packing density.In summary, the STT-MRAM memories that the present invention is provided have following technological merit：
(1) in the case where ensureing the heat endurance of device, the write-in electricity of perpendicular magnetic anisotropy DMTJ magnetic tunnel junction elements
Stream can be reduced to few tens of microamps or lower.Or in 20 nanometers or less of technology node field, further increase storage bit unit
Write operation nargin, expand STT-MRAM memories scalability (scalability) and high density data store and remember
Application in recalling.The magnetic tunnel junction element can also be applied to the design of many bits (multi-level bit) device simultaneously.
(2) due to perpendicular magnetic anisotropy DMTJ magnetic tunnel junction elements perpendicular magnetization stray magnetic field distribution constriction,
Reduce the outer field interactions and interference between magnetic tunnel junction element, and reset current distribution.Be conducive to STT-MRAM memories
Stability raising and densification.
(3) it is decreased to 20 nanometers or less in technology node (technology node), its heat endurance can still meet and set
Meter is required.Be conducive to the densification of STT-MRAM memories.Meanwhile, STT-MRAM memories belong to non-volatility memorizer,
Kept for the phase (data retention) with good data message.
(4) because STT-MRA memories have high speed read/write function.Write operation can be as short as a few nanosecond (nano-
Seconds completed in).Excellent durability (endurance) with write cycle time.By being typically designed, durability may be up to 1016Write
Cycle.
(5) STT-MRAM memories belong to low power consumption memories.Under typical service condition, the operation of read/write operation
Power consumption is only several picojoules (pico-Joule), is suitable for the application in low-power consumption and mobile device.
(6) STT-MRAM memories possess good system and processing compatibility.STT-MRAM is applied to compatible and replaced
Memory component in SOC, ROM and DRAM memory etc., to save space, the memory integrated level of raising reduces work(
Consumption, improves performance and effect.
Brief description of the drawings
Fig. 1 is the structural representation of STT-MRAM provided in an embodiment of the present invention storage bit unit.
Fig. 2 is the perpendicular magnetic anisotropy DMTJ magnetic member in STT-MRAM provided in an embodiment of the present invention storage bit unit
The parameter designing of perpendicular magnetic anisotropy magnetic free layer in part meets the equivalence of the requirement of the heat endurance needed for accumulator system
Line schematic diagram.
Fig. 3 is the perpendicular magnetic anisotropy DMTJ magnetic member in STT-MRAM provided in an embodiment of the present invention storage bit unit
The parameter designing of perpendicular magnetic anisotropy magnetic free layer in part meets the low switch electric current and hyperpyrexia needed for accumulator system simultaneously
The isopleth schematic diagram of the requirement of stability.
Fig. 4 is the perpendicular magnetic anisotropy DMTJ magnetic member in STT-MRAM provided in an embodiment of the present invention storage bit unit
The structural representation of part；Wherein, single pinned structure that (a) provides for prior art；(b) it is vertical for the double pinnings of the invention provided
Anisotropic magnetic spin valve structure.
Fig. 5 is the perpendicular magnetic anisotropy DMTJ magnetic member in STT-MRAM provided in an embodiment of the present invention storage bit unit
Another embodiment of part structure；Wherein, perpendicular magnetic anisotropy magnetic free layer is individual layer, perpendicular magnetic anisotropy magnetic in (b) in (a)
Free layer is the complex vertical anisotropic magnetic free layer coupled with anti-ferromagnetism.
Fig. 6 is the perpendicular magnetic anisotropy DMTJ magnetic member in STT-MRAM provided in an embodiment of the present invention storage bit unit
Another embodiment of part structure；Wherein the magnetically fixed layer of perpendicular magnetic anisotropy is individual layer.
Fig. 7 is the perpendicular magnetic anisotropy DMTJ magnetic member in STT-MRAM provided in an embodiment of the present invention storage bit unit
Another embodiment of part structure；Wherein the magnetically fixed layer of perpendicular magnetic anisotropy is that the complex vertical with anti-ferromagnetism coupling is each to different
The magnetically fixed layer of property.
Fig. 8 is the perpendicular magnetic anisotropy DMTJ magnetic member in STT-MRAM provided in an embodiment of the present invention storage bit unit
Another embodiment of part structure.
Fig. 9 is the perpendicular magnetic anisotropy DMTJ magnetic member in STT-MRAM provided in an embodiment of the present invention storage bit unit
Another embodiment of part structure.
Figure 10 is the part storage bit unit array structure schematic diagram of STT-MRAM memories provided in an embodiment of the present invention；
Array wherein in (a) uses the arrangement architecture of independent source line；(b) array in uses the arrangement architecture that source line is shared.
Figure 11 is the partial memory framework of STT-MRAM memories provided in an embodiment of the present invention.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
It is contemplated that realizing the magnetic with perpendicular magnetic anisotropic characteristic (perpendicular anisotropy)
Multilayer film Spin Valve device and spin-torque transmission MAGNETIC RANDOM ACCESS MEMORY (STT-MRAM).In such magnetic spin valve
In structure, magnetic fixed bed and free layer have perpendicular to the demagnetization energy in membrane plane direction and corresponding to each of perpendicular magnetic anisotropy
Anisotropy energy.Its perpendicular magnetic anisotropy can be more than the demagnetization energy perpendicular to membrane plane direction.By magnetic mechanism, it utilizes perpendicular magnetic
Anisotropy (perpendicular anisotropy) and corresponding distribution of magnetization realize magnetic recording and the storage of information.
The present invention is using the vertical magnetized film of double pinning perpendicular magnetic anisotropic Spin Valves under spin-torque transmission effects
Switch mechanism realize magnetic storage and the record of data.And provide the perpendicular magnetic anisotropic element and such as MRAM is deposited
The design and manufacture method of the magnetic-memory system of reservoir (" MRAM ").
Fig. 1 shows STT-MRAM provided in an embodiment of the present invention storage bit unit, with the vertical of double pinned structures
Magnetize form configuration under the structure and magnetic switch state of anisotropy DMTJ magnetic elements.Wherein, CMOS has been on-off action
Semiconductor transistor.DMTJ is perpendicular magnetic anisotropy magnetic tunnel-junction, PL, PL ' represent the magnetically fixed layer of perpendicular magnetic anisotropy, SP1,
SP2Separation layer is represented, FL represents perpendicular magnetic anisotropy magnetic free layer, M1And M '1Represent hanging down for the magnetically fixed layer of perpendicular magnetic anisotropy
Straight magnetization, M2Represent the perpendicular magnetization of perpendicular magnetic anisotropy magnetic free layer；BL represents bit line, and SL represents source line, and WL represents wordline；
Iw0, Iw1Represent the write current of different directions.
As shown in figure 1, the storage bit unit that the present invention is provided is configured based on 1T-1DMTJ.Each storage bit unit is by one
Individual perpendicular magnetic anisotropy magnetic tunnel-junction (DMTJ), at least one is used for the semiconductor transistor for connecting simultaneously selecting switch magnetic tunnel-junction
(CMOS), some to connect other storage bit units or the wordline (WL) of peripheral circuit, source line (SL) and bit line (BL) are constituted.And
Constitute the elementary cell with read-write operation function.Thereafter bit line and source line and bipolar write pulse generator (bipolar write
Pulse generator) or reading bias generator (read bias generator) connection.
Perpendicular magnetic anisotropy magnetic tunnel-junction (DMTJ) in storage bit unit is by double magnetically fixed layers of pinning perpendicular magnetic anisotropy
(PL, PL '), perpendicular magnetic anisotropy magnetic free layer (FL) and the double-deck nonmagnetic spacer layers or thin dielectric film for isolating the above two
(SP1, SP2) composition.Nonmagnetic spacer layers can use bilayer film insulating barrier, or thin dielectric film and non-magnetic metal layer
Combine configuration.During there is the typical structure configuration of perpendicular magnetic anisotropic at one, thin dielectric film and isolated by it the
The magnetically fixed layer of one perpendicular magnetic anisotropy and the formation tunneling engagement of high spin-polarization of perpendicular magnetic anisotropy magnetic free layer.Thin dielectric film
Application electronics is tunnelled to another ferromagnetic layer from a ferromagnetic layer.Meanwhile, the application of the second thin dielectric film may be used also
Electronics is set to be tunnelled to last ferromagnetic layer, i.e. the second perpendicular magnetic anisotropy from perpendicular magnetic anisotropy magnetic free layer magnetically fixed
Layer.Wherein, as spin polarized device, double magnetically fixed layers of pinning perpendicular magnetic anisotropy fixed or pinning and with being parallel to each other or
Antiparallel magnetization.Perpendicular magnetization positioned at second ferromagnetic layer (magnetic free layer) at perpendicular magnetic anisotropic magnetic tunnel-junction center can be with
Rotated freely in externally-applied magnetic field.Its perpendicular magnetization direction individually can be rotated or switched due to spin-torque transmission effects.Such
The vertical crystal anisotropy in inherence of the macroscopical perpendicular magnetic anisotropic that the magnetic tunnel-junction of type has from thin magnetic film.Also wrap
The induction perpendicular magnetic anisotropic for coming that comfortable part or localized magnetization layer and multilayer membrane interface are produced is included, or from magnetosphere
Superlattices construction and its band structure characteristic caused by perpendicular magnetic anisotropic.
When writing " 0 " in storage bit unit, it is added on bit line (BL) and writes voltage for positive VDD, source line (SL) ground connection.This
When wordline (WL) in VDDOr be activated under higher voltage.Reset current IW0Pass through perpendicular magnetic anisotropy magnetic tunnel-junction through bit line
And semiconductor transistor flows into source line or earth terminal.And electronics flow direction with electric current on the contrary, from the magnetically fixed laminar flow of perpendicular magnetic anisotropy
To perpendicular magnetic anisotropy magnetic free layer.Due to spin-torque transmission effects, the perpendicular magnetization of magnetic free layer is switched to and fixed bed
The parallel state of perpendicular magnetization.Opposite, when writing " 1 " in storage bit unit, bit line is selectively grounded, and positive VDD's
Voltage is write to be added on the line of source.Reset current IW1With previously written electric current IW0It is in opposite direction.Grid source electrode on semiconductor transistor
Bias VGSIt is VWL–VMTJ.(V when therefore now writing " 0 " operation from the electric current ratio that the semiconductor transistor flows throughGS=VWL) electric current
To be low.Finally, reset current and its asymmetry turn into the storage of the size for determining storage bit unit and STT-MRAM memories
One of key factor of density.To an equal amount of storage bit unit, high-performance transistor can compare low power transistor
(NMOS) more electric currents are provided to support the write operation of storage bit unit.
Fig. 2 shows the perpendicular magnetic anisotropy DMTJ magnetic in STT-MRAM provided in an embodiment of the present invention storage bit unit
Property element design.Heat needed for the parameter designing of the perpendicular magnetic anisotropy magnetic free layer of the magnetic element meets accumulator system is steady
Qualitatively require.Wherein, Ms represents the perpendicular magnetization of perpendicular magnetic anisotropy magnetic free layer, HpkRepresent that its perpendicular magnetic anisotropy magnetic is each
Anisotropy；Thermal factor represent thermal stability factor.
The present invention provides the element for the perpendicular magnetic anisotropy DMTJ magnetic tunnel-junctions being used in STT-MRAM storage bit units
Structure design.Fig. 2 isopleth shows thermal stability factor (thermal stability factor) and perpendicular magnetic anisotropy magnetic
The perpendicular anisotropy field of free layer, Hpk, and perpendicular magnetization, MS, internal relation.Perpendicular anisotropy field corresponds to vertical
The perpendicular magnetic anisotropic of anisotropy magnetic tunnel junction element.The projected working point and scope (H of magnetic tunnel-junctionpki, Msi；I=1,
2,3,4 ...) it is decided by thermal stability factor (thermal stability factor), device capacitance (storage density) and work
Condition requirement.With the raising required thermal stability factor, projected working point (Hpk1, Ms1) it is concomitantly moved toward high site (Hpk2,
Ms2).For certain thermal stability factor requirement, using relatively low perpendicular anisotropy field HpkWith slightly higher perpendicular magnetization MSCombination
Design may be more beneficial for the performance improvement of device.
Fig. 3 shows the perpendicular magnetic anisotropy DMTJ magnetic in STT-MRAM provided in an embodiment of the present invention storage bit unit
Property element design.The parameter designing of the perpendicular magnetic anisotropy magnetic free layer of the magnetic element is met needed for accumulator system simultaneously
The requirement of low switch electric current and high thermal stability.Wherein, Thermal factor represent thermal stability factor；JswRepresent that this is vertical
The switching electric current density of the perpendicular magnetization of anisotropic magnetic free layer；α represents the damped coefficient of magnetic free layer, and η represents the magnetic tunnel
The spin-torque transmission efficiency of road knot；HP NMOS are high-performance semiconductor transistor, and LPO NMOS are low-power semiconductor crystal
Pipe.
Fig. 3 characteristic curve shows the perpendicular magnetization of vertical anisotropic magnetic free layer under spin-torque transmission effects
Switching characteristic, and its characteristic is for the interdependence of the pinning configuration of perpendicular magnetic anisotropic magnetic tunnel-junction.In heat endurance system
Number is determined, in the case of double pinning perpendicular magnetic anisotropic magnetic tunnel-junctions, the damping system of perpendicular magnetic anisotropy magnetic free layer
The reduction of number and spin-torque transmission efficiency ratio causes write-operation current to reduce, projected working point (Jsw3, Δ2) be concomitantly moved toward it is low
Site (Jsw2, Δ2), be conducive to the densification and high capacity of magnetic device.On the other hand, it is limited in write current, equally adopt
In the case of double pinning perpendicular magnetic anisotropic magnetic tunnel-junctions, projected working point (Jsw3, Δ2) it is concomitantly moved toward same site
(Jsw3, Δ3), but Δ3>Δ1.Greatly ensure the heat endurance of device in the case of limited write current.When using low
During power (LPO) semiconductor transistor NMOS, in the case of limited write current in order to ensure device heat endurance it require
The damped coefficient and spin-torque transmission efficiency ratio of relatively low perpendicular magnetic anisotropy magnetic free layer.Write operation design work point location
In (Jsw on the characteristic curve of DMTJ magnetic tunnel-junctions1, Δ1；Jsw2, Δ2；LOP NMOS) a kind of rational selection of can yet be regarded as.And work as
During using high-performance (HP) semiconductor transistor NMOS, in the case of certain device heat endurance is ensured, write operation design work
Significantly increased as electric current, expand the damped coefficient and spin-torque transmission efficiency ratio of perpendicular magnetic anisotropy magnetic free layer
Modification scope.As the increase write operation projected working point of thermal stability requirement is from (Jsw3, Δ2；LOP NMOS) it is converted to
(Jsw3, Δ3；HP NMOS), wherein Jsw1<Jsw3And Δ3>Δ1.For perpendicular magnetic anisotropy magnetic tunnel junction element, this meaning
Taste using larger perpendicular magnetization MSWith the design objective of relatively low perpendicular anisotropy field, it is good to take into account and make it to possess
Heat endurance and spin-torque transmission switching characteristic.
Fig. 4 shows the perpendicular magnetic anisotropy DMTJ magnetic in STT-MRAM provided in an embodiment of the present invention storage bit unit
Property device embodiments.It is used as the single double pinnings (Fig. 4 a) and double pinning (Fig. 4 b) perpendicular magnetic anisotropy magnetic of the present invention of control configuration
Spin valve structure (spin valve).Wherein, PL, PL ' represent double magnetically fixed layers of pinning perpendicular magnetic anisotropy of anti-parallel arrangement,
(the SP of Spacer Layer 1,21, SP2) separation layer is represented, FL represents perpendicular magnetic anisotropy magnetic free layer, M1And M '1Represent to hang down
The perpendicular magnetization of straight anisotropic magnetic fixed bed, M2Represent the perpendicular magnetization of perpendicular magnetic anisotropy magnetic free layer.
Compared to single double pinning perpendicular magnetic anisotropy magnetic spin valve structures (Fig. 4 a) of control configuration, such as Fig. 1 and Fig. 4 b institutes
Show, the present invention provides double pinning perpendicular magnetic anisotropy DMTJ magnetic tunnel-junctions member of following uses in STT-MRAM storage bit units
Part structure.The magnetic tunnel junction element is by the magnetically fixed layer of the first perpendicular magnetic anisotropy (PL), and the first nonmagnetic spacer layers or film are exhausted
Edge layer (or barrier layer) (SP1), perpendicular magnetic anisotropy magnetic free layer (FL), the second nonmagnetic spacer layers or thin dielectric film
(SP2) constituted with the magnetically fixed layer of the second perpendicular magnetic anisotropy (PL ').Double magnetically fixed layers of pinning perpendicular magnetic anisotropy are fixed or followed closely
Prick and there is mutual antiparallel magnetization.Nonmagnetic spacer layers can use bilayer film insulating barrier, or thin dielectric film and non-magnetic
The combination configuration of property metal level.Perpendicular magnetic anisotropy magnetic free layer and the magnetically fixed layer of perpendicular magnetic anisotropy have perpendicular to membrane plane
The demagnetization energy in direction and corresponding to the anisotropic anisotropy energy of magnetic vertical.The magnetic vertical anisotropy energy is more than vertical
Demagnetization energy in membrane plane direction.(and the inculating crystal layer (seedlayer) positioned at magnetic tunnel-junction bottom exists the coating of magnetic tunnel-junction
Not shown in figure) abut perpendicular magnetic anisotropy magnetic free layer and connect the coupling part (contact) of semiconductor transistor circuitry.
When write current (write current) is by the magnetic element, its construction makes its perpendicular magnetic anisotropy magnetic free layer to lead to
Overspin moment of torsion transmission effects switching or switch between stable magnetic state.It is vertical each to different in the double pinnings of antiparallel magnetization
Property magnetically fixed layer configuration in, the efficiency increase of effective spin-torque transmission, this will be helpful to improve spin-torque transmission effects, and
Reduce write operation switching current.
The perpendicular magnetic anisotropy magnetic free layer and the magnetically fixed layer of perpendicular magnetic anisotropy can be magnetic single or multiple lift membrane structure.Its
Magnetic multilayes structure can be situated between with the ferromagnetic sub-layer of itself (magnetic sublayer) by different ferrimagnets
Formed therebetween with Ferromagnetic coupling or these ferromagnetic sub-layers by the intermediate layer of different nonmagnetic substances with ferromagnetic
Property is coupled to form.Moreover, its ferromagnetic sub-layer also can be magnetic single or multiple lift membrane structure in itself.It is specific open show can be summarized as with
Lower classification and preferred embodiment.
Perpendicular magnetic anisotropy magnetic free layer or any perpendicular magnetic anisotropy fixed bed can be by ferromagnetic sub-layers and other iron
The repeated multi-layer film structure that magnetic material intermediate layer is formed with Ferromagnetic coupling is constituted.Wherein, ferromagnetic sub-layer and ferromagnetism
Intermediate layer all includes magnesium-yttrium-transition metal Co, Fe, or Ni, or their crystallinity bianry alloy (such as ferro-cobalt, iron cobalt, NiFe alloy)
Or ternary alloy three-partalloy (such as CoFeNi or FeCoNi alloys), or the magnetic constituted with boron or other amorphous, non-crystalline alloy formation elements
Property non-crystaline amorphous metal (such as CoFeB, CoFe (Al, Si) non-crystaline amorphous metal), or based on above-mentioned ferromagnetic metal, aoxidized formed by alloy
Thing, nitride or nitrogen oxides.In wherein one preferred embodiment, perpendicular magnetic anisotropy magnetic free layer, perpendicular magnetic anisotropy
The repeated multi-layer film structure that fixed bed or both is formed by ferromagnetic sub-layer Co and ferromagnetism intermediate layer Ni with Ferromagnetic coupling
Composition.Perpendicular magnetic anisotropy multilayer film Co/Ni can have (001), (011) or (111) crystallization texture.
In addition, perpendicular magnetic anisotropy magnetic free layer or any perpendicular magnetic anisotropy fixed bed can also by ferromagnetic sub-layer with
The repeated multi-layer film structure that the intermediate layer of nonmagnetic substance is formed with Ferromagnetic coupling is constituted.Wherein, ferromagnetic sub-layer includes
Magnesium-yttrium-transition metal Co, Fe, or Ni, or their crystallinity bianry alloy (such as ferro-cobalt, iron cobalt, NiFe alloy) or ternary alloy three-partalloy
(such as CoFeNi or FeCoNi alloys), or the magnetic non-crystaline amorphous metal constituted with boron or other amorphous, non-crystalline alloy formation elements
(such as CoFeB, CoFe (Al, Si) non-crystaline amorphous metal).It is general and nonmagnetic intermediate layer includes noble metal (Noble metals)
Nonmagnetic metal and its alloy.They can be Ag, Au, Pt, Pd；Cu, Cr, Mg, Al, Mn, Ru, Rh, Ir, tantalum, titanium, zirconium,
Hafnium；Non magnetic binary or multicomponent alloy between them；Or the multilayer by being constituted more than more than one above-mentioned nonmagnetic substance
Structure；Or based on above-mentioned nonmagnetic metal, oxide formed by alloy or sandwich construction, nitride or nitrogen oxides.At it
In in a preferred embodiment, the repeatability formed by ferromagnetic sub-layer Co and nonferromagnetic intermediate layer Pt with Ferromagnetic coupling
Multi-layer film structure.Also include Co/Ag, Co/Au to Co/Pt, Co/Pd multi-layer film structures.Its magnetic vertical anisotropy is by weak turn
By force and with controllability.
In addition, perpendicular magnetic anisotropy magnetic free layer or any perpendicular magnetic anisotropy fixed bed can also be ferromagnetism ferro-cobalt or
The magnetic amorphous alloy thin film layer that ferrocobalt is constituted with boron or other amorphous, non-crystalline alloy formation elements.And they are by boundary
Face is connected with the barrier layer of magnetic tunnel-junction, and the 3d and the 2p tracks of oxygen (O) by iron (Fe) hybridize that to form magnetic vertically each
Anisotropy.In wherein one preferred embodiment, MgO film insulating barrier constitutes MgO/CoFeB with amorphous, non-crystalline alloy film
(tF) and CoFeB (tF)/MgO structures；Wherein tF<1.5 nanometers (nm).The interfacial structure provides perpendicular magnetic anisotropy magnetic free layer
With fixed bed high spinning polarizability or spin-torque transmission efficiency and magnetic perpendicular magnetic anisotropy.
Hybridize to be formed in the Optimal Example of magnetic perpendicular magnetic anisotropy using track at another, perpendicular magnetic anisotropy magnetic is free
Layer is made up of the multilayer film of MgO (barrier)/CoFeB/Ta (MgO)/CoFeB/MgO (Ta, cap) structure.The multilayer film is also
Line period can be entered with the film unit structure C oFeB/Ta (MgO) of its nanometer scale to replicate to increase the integrated thickness of multilayer film.
Wherein, nonmagnetic metal intermediate layer Ta can be replaced with metal oxide layer MgO thin layers.Otherwise still, metal oxide
The non-magnetic capping layer that layer MgO (cap) is constituted can also simultaneously be replaced with non-magnetic metal layer Ta.Here, non magnetic gold
Belong to intermediate layer (coating) in addition to using Ta, it is also possible to use Titanium, zirconium, hafnium, Ag, Au, Pt, Pd；Cu, Cr, Mg, Al, Mn,
Ru, Rh, Ir, or non magnetic binary or multicomponent alloy between them.Equally, nonmagnetic metal intermediate layer (coating) is removed and used
Outside MgO, such as AlOx it is also possible to use, TaOx, TiOx, the shape based on above-mentioned nonmagnetic metal, alloy or sandwich construction such as ZnOx
Into oxide, nitride or nitrogen oxides.
The thin dielectric film or barrier layer of the perpendicular magnetic anisotropy magnetic tunnel-junction can have crystallization or amorphous non-
Crystal structure.It is (001) MgO crystalline solid oxide layers that can have, or by element al, Ti, Ta, Zn, Hf and Zr formed it is noncrystal
Oxide layer.It can also be the mixing that is formed between these different oxides or compound group into oxide layer.It can also
It is the oxynitride layer by above-mentioned different element or alloy, or the multilayer knot by being constituted more than more than one above-mentioned element
Structure.Barrier layer can be realized using the autoxidation or plasma oxidation method of sputtered metal film, or be splashed using radio frequency
The method for penetrating oxide target material is made.
The metallicity nonmagnetic spacer layers of the perpendicular magnetic anisotropy magnetic tunnel-junction can also be Titanium, zirconium, hafnium, Ag, Au,
Pt, Pd；Cu, Cr, Mg, Al, Mn, Ru, Rh, Ir, binary or multicomponent alloy between them, or they and magnetic transition race metal
The non magnetic binary or multicomponent alloy formed between Co, Fe, or Ni.
Fig. 5 shows the perpendicular magnetic anisotropy DMTJ magnetic in STT-MRAM provided in an embodiment of the present invention storage bit unit
Property another embodiment of element.The magnetic element is the magnetic spin of double magnetically fixed layers of pinning perpendicular magnetic anisotropy with configured in parallel
Valve arrangement.Wherein, perpendicular magnetic anisotropy magnetic free layer be individual layer (Fig. 5 a) or with the complex vertical that anti-ferromagnetism is coupled it is each to
Different in nature magnetic free layer (Fig. 5 b).PL, PL ' represent configured in parallel double magnetically fixed layers of pinning perpendicular magnetic anisotropy, SP1, SP2Represent
Separation layer, FL, FL ' the free individual layer of perpendicular magnetic anisotropy magnetic or sublayer are represented, Interlayer couple layer represent position
Anti-ferromagnetism coupling intermediate layer in complex vertical anisotropic magnetic free layer, M1And M '1Represent that perpendicular magnetic anisotropy is magnetically fixed
The perpendicular magnetization of layer, M2, M '2Represent the perpendicular magnetization of free (son) layer of perpendicular magnetic anisotropy magnetic.
As shown in figure 5, the present invention provides double pinnings of following uses in STT-MRAM storage bit units vertically respectively to different
Property DMTJ magnetic tunnel junction element structures.The magnetic tunnel junction element is by the magnetically fixed layer of the first perpendicular magnetic anisotropy (PL), the first non-magnetic
Sexual isolation layer or thin dielectric film (SP1), perpendicular magnetic anisotropy magnetic free layer (FL) (Fig. 5 (a)) or complex vertical anisotropy
Magnetic free layer (FL, FL ') (Fig. 5 (b)), the second nonmagnetic spacer layers or thin dielectric film (SP2), the second perpendicular magnetic anisotropy
Magnetically fixed layer (PL ') is constituted.Double magnetically fixed layers of pinning perpendicular magnetic anisotropy are fixed and with the magnetization that is parallel to each other.It is non magnetic every
Absciss layer can use bilayer film insulating barrier, or thin dielectric film and non-magnetic metal layer combination configuration.Compared to monomer
Perpendicular magnetic anisotropy magnetic free layer structure (Fig. 5 a), as shown in Figure 5 b, complex vertical anisotropic magnetic free layer is by magnetic libron
Layer FL, FL ' anti-ferromagnetism is coupled to form.Wherein, perpendicular magnetic anisotropy magnetic free layer and the magnetically fixed layer of perpendicular magnetic anisotropy have
Perpendicular to the demagnetization energy in membrane plane direction and corresponding to the anisotropic anisotropy energy of magnetic vertical.The magnetic vertical is each to different
Performance is more than the demagnetization energy perpendicular to membrane plane direction.Coating (and the inculating crystal layer positioned at magnetic tunnel-junction bottom of magnetic tunnel-junction
(seedlayer) not shown in figure) abut perpendicular magnetic anisotropy magnetic free layer and connect the connection of semiconductor transistor circuitry
Partly (contact).When write current (write current) is by the magnetic element, its construction makes it vertical each to different
Property magnetic free layer switching or can be switched between stable magnetic state by spin-torque transmission effects.And it is double in parallel magnetization
In the magnetically fixed layer configuration of pinning perpendicular magnetic anisotropy, effective spin polarizability is improved, and is favorably improved electron tunneling effect
Increase the write operation nargin (operation margin) of TMR and STT-MRAM storage bit units.As shown in Figure 5 b, when using anti-
During the complex vertical anisotropic magnetic free layer of Ferromagnetic coupling, because the antiparallel magnetization of magnetic libron interlayer is arranged, formed
Similar to the local configuration of the magnetically fixed layer of the double pinning perpendicular magnetic anisotropies of antiparallel magnetization.Thus effective spin-torque transmission efficiency
Increase, and with the reduction of write operation switching current.Meanwhile, the anti-ferromagnetism coupling of complex vertical anisotropic magnetic free layer is strong
The structure of degree and the free sublayer of magnetic is optimized to realize the stability of write operation.
The perpendicular magnetic anisotropy magnetic free layer and the magnetically fixed layer of perpendicular magnetic anisotropy and its magnetic layers can have above-mentioned magnetic
Property perpendicular magnetic anisotropy film any one of or combining structure.Its magnetic material structures can with identical or different, but its
Structure or composition must meet the design requirement of complex vertical anisotropic magnetic free layer or magnetically fixed layer.And it is used for antiferromagnetic coupling
The intermediate layer of complex vertical anisotropic magnetic fixed bed can be Ru, Rh, Cr, Ti, Zr, Hf, Ta, Cu, Ag, Au, Pt, Pd,
Mg, Al, or their alloy.
Fig. 6 shows the perpendicular magnetic anisotropy DMTJ magnetic in STT-MRAM provided in an embodiment of the present invention storage bit unit
Property another embodiment of element.The magnetic element for double magnetically fixed layers of pinning perpendicular magnetic anisotropy with anti-parallel arrangement magnetic oneself
Spin valve structures.Wherein, the magnetically fixed layer of perpendicular magnetic anisotropy be individual layer (Fig. 6) or with the complex vertical that anti-ferromagnetism is coupled it is each to
The magnetically fixed layer (Fig. 7) of the opposite sex, perpendicular magnetic anisotropy magnetic free layer is the composite magnetic free layer with Ferromagnetic coupling.PL1,
PL’1, PL "1, PL2And PL '2Sequentially represent magnetically fixed (son) layer of perpendicular magnetic anisotropy, SP1, SP2Represent separation layer, FL, FL ' table
Show the free sublayer of perpendicular magnetic anisotropy magnetic, Intermediate Layer 1,2 represent to be located at composite magnetic fixed bed and freedom
The the first, the second Ferromagnetic coupling intermediate layer in layer, Interlayer couple layer (1), 2 represent to be located at complex vertical
Anti-ferromagnetism coupling intermediate layer in anisotropic magnetic fixed bed.M1, M '1, M "1, M3And M '3Sequentially represent it is compound it is vertical each to
The perpendicular magnetization of magnetically fixed (son) layer of the opposite sex, M2And M '2Represent the perpendicular magnetic of two magnetic layers of perpendicular magnetic anisotropy magnetic free layer
Change.
As shown in Figure 6, Figure 7, double pinnings of the following uses of present invention offer in STT-MRAM storage bit units are vertically each
Anisotropy DMTJ magnetic tunnel junction element structures.The magnetic tunnel junction element is by the first complex vertical anisotropic magnetic fixed bed (PL1,
PL’1, PL "1), the first nonmagnetic spacer layers or thin dielectric film (SP1), complex vertical anisotropic magnetic free layer (FL, FL '),
Second nonmagnetic spacer layers or thin dielectric film (SP2), the magnetically fixed layer of the second perpendicular magnetic anisotropy (PL2) (Fig. 6) or second multiple
Close the magnetically fixed layer (PL of perpendicular magnetic anisotropy2, PL '2) (Fig. 7) composition.The coating of magnetic tunnel-junction is (and positioned at magnetic tunnel-junction bottom
Inculating crystal layer (seedlayer) not shown in figure) adjacent perpendicular magnetic anisotropy magnetic free layer and connection semiconductor transistor electricity
The coupling part (contact) on road.When write current (write current) is by the magnetic element, its construction makes it hang down
Straight anisotropic magnetic free layer can be switched or be switched between stable magnetic state by spin-torque transmission effects.
Wherein, perpendicular magnetic anisotropy magnetic layers PL "1And FL is high spinning polarizability magnetic reference sublayer and magnetic libron
Layer.PL”1With another perpendicular magnetic anisotropy magnetic with reference to sublayer PL '1Press from both sides the first Ferromagnetic coupling intermediate layer formed complex vertical it is each to
Different in nature magnetic reference layer.The structure then with the magnetically fixed sublayer PL of perpendicular magnetic anisotropy1Press from both sides anti-ferromagnetism coupling intermediate layer and constitute the
One complex vertical anisotropic magnetic fixed bed.Equally, FL and FL ' press from both sides the second Ferromagnetic coupling intermediate layer formed complex vertical it is each to
Different in nature magnetic free layer.Perpendicular magnetic anisotropy magnetic is with reference to sublayer PL2With the magnetically fixed sublayer PL ' of perpendicular magnetic anisotropy2Press from both sides second antiferromagnetic
Property coupling intermediate layer constitute the second complex vertical anisotropic magnetic fixed bed (Fig. 7).Herein, perpendicular magnetic anisotropy magnetic free layer and
The magnetically fixed layer of perpendicular magnetic anisotropy has perpendicular to the demagnetization energy in membrane plane direction and anisotropic each corresponding to magnetic vertical
Anisotropy energy.The magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction.Moreover, perpendicular magnetic anisotropy magnetic
Double pinning perpendicular magnetic anisotropy magnetic of free layer both sides are with reference to (son)/fixed bed PL "1And PL2Fixed and with mutually antiparallel
Magnetization arrangement.That is one of magnetically fixed layer of two perpendicular magnetic anisotropies has anti-ferromagnetism coupled structure.But it is another vertical each to different
Property magnetically fixed layer be magnetic monolayer film structure.As generality discussion, the perpendicular magnetic anisotropy magnetic of double pinnings with reference to (fixation) and
Magnetic individual layer that fixed bed can be made up of associated magnetic material respectively is coupled with anti-ferromagnetism and interlayer structure
Magnetoresistance effect.During one of magnetically fixed layer of two perpendicular magnetic anisotropies has even level perpendicular magnetic anisotropy magnetic layers and is non magnetic
The anti-ferromagnetism coupling multilayer membrane structure that interbed is constituted.But another magnetically fixed layer of perpendicular magnetic anisotropy has radix layer vertical each
Anisotropy magnetic layers couple many with the anti-ferromagnetism that the anti-ferromagnetism coupling multilayer membrane structure that nonmagnetic intermediate layer is constituted is constituted
Film structure).In perpendicular magnetic anisotropy magnetic free layer both sides, their perpendicular magnetization is arranged into antiparallel magnetization.Effectively spin
The efficiency of moment of torsion transmission will increase, and be favorably improved spin-torque transmission effects and reduce write operation switching current.
Wherein, the sublayer and perpendicular magnetic anisotropy magnetic of the complex vertical anisotropic magnetic fixed bed of the magnetic tunnel junction element from
By layer then can have above-mentioned magnetic vertical anisotropic membrane any one of or combining structure.Its magnetic material structures can
With identical or different, but its structure or constitute must meet the design of complex vertical anisotropic magnetic free layer or magnetically fixed layer will
Ask.In addition, the second separation layer (SP2) of double fixed vertical anisotropy magnetic tunnel-junction MTJ elements can also be metal conducting layer
Rather than oxide tunnel barrier layer.It can be elemental metals layer such as Ru, Rh, tantalum, titanium, zirconium, hafnium, Cu, Ag, Au, Pt, Pd,
Cr, Mg, Al, or their alloy or multilayer film.And be used in the complex vertical anisotropic magnetic fixed bed of antiferromagnetic coupling
Interbed can be Ru, Rh, Cr, Ti, Zr, Hf, Ta, Cu, Ag, Au, Pt, Pd, Mg, Al, or their alloy.It is used in multiple
It can be Ru to close the Ferromagnetic coupling intermediate layer in the magnetically fixed layer of perpendicular magnetic anisotropy and free layer, Rh, tantalum, titanium, zirconium, hafnium, Cu,
Their ferromagnetic alloy such as Ag, Au, Pt, Pd, Cr, Mg, Al, iron, cobalt, nickel or ferro-cobalt or iron cobalt, amorphous alloy, or they
Multilayer film, oxide, nitride or nitrogen oxides.
Fig. 8 shows the perpendicular magnetic anisotropy DMTJ magnetic in STT-MRAM provided in an embodiment of the present invention storage bit unit
Property another embodiment of element.The magnetic element is the magnetic spin of double magnetically fixed layers of pinning perpendicular magnetic anisotropy with configured in parallel
Valve arrangement.Wherein, the magnetically fixed layer of perpendicular magnetic anisotropy is the complex vertical anisotropic magnetic fixed bed coupled with anti-ferromagnetism,
Perpendicular magnetic anisotropy magnetic free layer is the composite magnetic free layer with Ferromagnetic coupling.PL1, PL '1, PL "1, PL2, PL '2With
PL”2Sequentially represent the magnetically fixed sublayer of perpendicular magnetic anisotropy, SP1, SP2Represent separation layer, FL, FL ' and FL ' ' represent it is vertical respectively to
The different in nature free sublayer of magnetic, Intermediate Layer 1,2,3 and 4 sequentially represent to be located at composite magnetic fixed bed and free layer
In Ferromagnetic coupling intermediate layer, Interlayer couple layer1,2 represent to be located at complex vertical anisotropy it is magnetically fixed
Anti-ferromagnetism coupling intermediate layer in layer. M1, M '1, M "1, M3, M '3And M "3Sequentially represent that compound perpendicular magnetic anisotropy magnetic is consolidated
The perpendicular magnetization of stator layers, M2, M '2And M "2Represent the perpendicular magnetization of the free sublayer of perpendicular magnetic anisotropy magnetic.
As shown in figure 8, the present invention provides double pinnings of following uses in STT-MRAM storage bit units vertically respectively to different
Property DMTJ magnetic tunnel junction element structures.The magnetic tunnel junction element is by the first complex vertical anisotropic magnetic fixed bed (PL1, PL '1,
PL”1), the first nonmagnetic spacer layers or thin dielectric film (SP1), complex vertical anisotropic magnetic free layer (FL, FL ', FL "),
Second nonmagnetic spacer layers or thin dielectric film (SP2), the second complex vertical anisotropic magnetic fixed bed (PL2, PL '2, PL
‘’2) constitute.Magnetic tunnel-junction coating (and positioned at magnetic tunnel-junction bottom inculating crystal layer (seedlayer) not shown in figure)
The coupling part (contact) of adjacent perpendicular magnetic anisotropy magnetic free layer and connection semiconductor transistor circuitry.Work as write current
When (write current) is by the magnetic element, its construction makes its perpendicular magnetic anisotropy magnetic free layer can be by from turn-knob
Square transmission effects switching or switch between stable magnetic state.
Wherein, perpendicular magnetic anisotropy magnetic layers PL "1, PL2And FL, FL " are high spinning polarizability magnetic reference sublayer and magnetic
Free sublayer.PL”1With perpendicular magnetic anisotropy magnetic with reference to sublayer PL '1Press from both sides the first Ferromagnetic coupling intermediate layer and form first and be combined and hang down
Straight anisotropic magnetic reference layer.Equally, PL "1With another perpendicular magnetic anisotropy magnetic with reference to sublayer PL '1Press from both sides in the first Ferromagnetic coupling
The second complex vertical anisotropic magnetic reference layer of interbed formation top.Then first (the second) complex vertical anisotropic magnetic reference
Layer and the magnetically fixed sublayer PL of perpendicular magnetic anisotropy1(PL‘’2) folder first (the second) anti-ferromagnetism coupling intermediate layer composition first (the
Two) complex vertical anisotropic magnetic fixed bed.FL, FL ' and FL " press from both sides the second, the three Ferromagnetic coupling intermediate layer shape respectively according to this
Into complex vertical anisotropic magnetic free layer.Herein, perpendicular magnetic anisotropy magnetic free layer and the magnetically fixed layer tool of perpendicular magnetic anisotropy
Have perpendicular to the demagnetization energy in membrane plane direction and corresponding to the anisotropic anisotropy energy of magnetic vertical.The magnetic vertical it is each to
The opposite sex can be more than the demagnetization energy perpendicular to membrane plane direction.Moreover, double pinnings of perpendicular magnetic anisotropy magnetic free layer both sides are vertical
Anisotropic magnetic is with reference to (son)/fixed bed PL "1And PL2Fixed and with the magnetization arrangement that is parallel to each other.Double pinnings it is vertical each to
The magnetically fixed layer of the opposite sex is respectively provided with anti-ferromagnetism coupled structure.From generality discussion, the perpendicular magnetic anisotropy magnetic of double pinnings with reference to (Gu
It is fixed) and the magnetic individual layer that can be made up of respectively associated magnetic material of fixed bed or tied with anti-ferromagnetism coupling and intermediate layer
The magnetoresistance effect of structure.The magnetically fixed layer of two perpendicular magnetic anisotropies have simultaneously the perpendicular magnetic anisotropy magnetic layers of the identical number of plies with
The anti-ferromagnetism coupling multilayer membrane structure that nonmagnetic intermediate layer is constituted.In perpendicular magnetic anisotropy magnetic free layer both sides, two is vertical each
Being magnetized into for the magnetically fixed layer of anisotropy is arranged in parallel.The efficiency of spin transfer will be enhanced, and be favorably improved electron tunneling effect
The write operation nargin (operation margin) of TMR and STT-MRAM storage bit units should be increased.
Wherein, the sublayer and perpendicular magnetic anisotropy magnetic of the complex vertical anisotropic magnetic fixed bed of the magnetic tunnel junction element from
By layer then can have above-mentioned magnetic vertical anisotropic membrane any one of or combining structure.Its magnetic material structures can
With identical or different, but its structure or constitute must meet the design of complex vertical anisotropic magnetic free layer or magnetically fixed layer will
Ask.In addition, the second separation layer (SP2) of double fixed vertical anisotropy magnetic tunnel-junction MTJ elements, for answering for antiferromagnetic coupling
The intermediate layer of the magnetically fixed layer of perpendicular magnetic anisotropy is closed, and is used in complex vertical anisotropic magnetic fixed bed and free layer
Ferromagnetic coupling intermediate layer can also be above-mentioned any one of classification, or combination form and structure relatively.
Fig. 9 shows the perpendicular magnetic anisotropy DMTJ magnetic in STT-MRAM provided in an embodiment of the present invention storage bit unit
Property another embodiment of element.The magnetic element is the magnetic spin of double magnetically fixed layers of pinning perpendicular magnetic anisotropy with configured in parallel
Valve arrangement.Wherein, the magnetically fixed layer of perpendicular magnetic anisotropy is the complex vertical anisotropic magnetic fixed bed coupled with anti-ferromagnetism,
Perpendicular magnetic anisotropy magnetic free layer is the composite magnetic free layer coupled with anti-ferromagnetism.PL1, PL '1, PL "1, PL2, PL '2With
PL”2Sequentially represent the magnetically fixed sublayer of perpendicular magnetic anisotropy, SP1, SP2Represent separation layer, FL, FL ', FL " and FL " ' represent vertical
The free sublayer of anisotropic magnetic, Intermediate Layer 1,2,3 and 4 sequentially represent be located at composite magnetic fixed bed and from
By the Ferromagnetic coupling intermediate layer in layer, Interlayer couple layer1,2 and 3 represent to be located at complex vertical respectively to different
Property magnetically fixed layer and free layer in anti-ferromagnetism coupling intermediate layer.M1, M '1, M "1, M3, M '3And M "3Sequentially represent compound to hang down
Straight anisotropic magnetic fixes the perpendicular magnetization of sublayer, M2, M '2, M ' '2And M " '2Represent hanging down for the free sublayer of perpendicular magnetic anisotropy magnetic
Straight magnetization.
As shown in figure 9, the present invention provides double pinnings of following uses in STT-MRAM storage bit units vertically respectively to different
Property DMTJ magnetic tunnel junction element structures.The magnetic tunnel junction element is by the first complex vertical anisotropic magnetic fixed bed (PL1, PL '1,
PL”1), the first nonmagnetic spacer layers or thin dielectric film (SP1), complex vertical anisotropic magnetic free layer (FL, FL ', FL ",
FL " '), the second nonmagnetic spacer layers or thin dielectric film (SP2), the second complex vertical anisotropic magnetic fixed bed (PL2, PL
’2, PL ' '2) constitute.Its first and second complex verticals anisotropic magnetic fix Rotating fields it is vertical with double pinning shown in Fig. 8 respectively to
The magnetically fixed layer of the opposite sex is similar.Magnetic tunnel-junction coating (and positioned at magnetic tunnel-junction bottom inculating crystal layer (seedlayer) in figure
It is not shown) abut perpendicular magnetic anisotropy magnetic free layer and connect the coupling part (contact) of semiconductor transistor circuitry.When writing
When electric current (write current) is by the magnetic element, its construction makes its perpendicular magnetic anisotropy magnetic free layer can be by certainly
Turn-knob square transmission effects switching or switch between stable magnetic state.
Wherein, perpendicular magnetic anisotropy magnetic layers PL "1, PL2And FL, FL " ' it is high spinning polarizability magnetic reference sublayer and magnetic
Free sublayer.FL and FL ' presss from both sides the second Ferromagnetic coupling intermediate layer and forms the free sublayer of complex vertical anisotropic magnetic, with this phase
Seemingly, FL " and FL " ' presss from both sides the 3rd Ferromagnetic coupling intermediate layer and forms another free sublayer of complex vertical anisotropic magnetic.This two be combined
The free sublayer of perpendicular magnetic anisotropy magnetic presss from both sides the second anti-ferromagnetism coupling intermediate layer and ultimately forms complex vertical anisotropic magnetic certainly again
By layer.Herein, perpendicular magnetic anisotropy magnetic free layer and the magnetically fixed layer of perpendicular magnetic anisotropy have moving back perpendicular to membrane plane direction
Magnetic energy and corresponding to the anisotropic anisotropy energy of magnetic vertical.The magnetic vertical anisotropy energy is more than perpendicular to membrane plane
The demagnetization energy in direction.Moreover, double pinning perpendicular magnetic anisotropy magnetic reference (son) of perpendicular magnetic anisotropy magnetic free layer both sides/fixed
Layer PL "1And PL2Fixed and with the magnetization arrangement that is parallel to each other.Double magnetically fixed layers of pinning perpendicular magnetic anisotropy are respectively provided with antiferromagnetic
Property coupled structure and be favorably improved electron tunneling effect increase TMR and STT-MRAM storage bit units write operation nargin
(operation margin).And in the complex vertical anisotropic magnetic free layer coupled using anti-ferromagnetism, due to magnetic
The antiparallel magnetization arrangement of libron interlayer, forms the office for being similar to the magnetically fixed layer of the double pinning perpendicular magnetic anisotropies of antiparallel magnetization
Portion's configuration, increases the effective spin-torque transmission efficiency of local.Meanwhile, to the anti-ferromagnetism of complex vertical anisotropic magnetic free layer
The structure of stiffness of coupling and the free sublayer of magnetic is optimized to realize the stability of write operation.
Wherein, the sublayer and perpendicular magnetic anisotropy magnetic of the complex vertical anisotropic magnetic fixed bed of the magnetic tunnel junction element from
By layer then can have above-mentioned magnetic vertical anisotropic membrane any one of or combining structure.Its magnetic material structures can
With identical or different, but its structure or constitute must meet the design of complex vertical anisotropic magnetic free layer or magnetically fixed layer will
Ask.In addition, the second separation layer (SP2) of double fixed vertical anisotropy magnetic tunnel-junction MTJ elements, for answering for antiferromagnetic coupling
The intermediate layer of the magnetically fixed layer of perpendicular magnetic anisotropy is closed, and is used in complex vertical anisotropic magnetic fixed bed and free layer
Ferromagnetic coupling intermediate layer can also be above-mentioned any one of classification, or combination form and structure relatively.
Figure 10 shows the part storage bit unit array of STT-MRAM memories provided in an embodiment of the present invention.The array
The arrangement architecture of (Figure 10 b) can be shared using independent source line (source line) (Figure 10 a) and source line.Wherein, CMOS is
The semiconductor transistor of on-off action, DMTJ is the magnetic spin valve tunnel knot with double magnetically fixed layers of pinning perpendicular magnetic anisotropy,
BL represents bit line, and SL represents source line, and WL represents wordline.
Figure 11 shows the partial memory framework of STT-MRAM memories provided in an embodiment of the present invention
(architecture).Wherein, CMOS has been the semiconductor transistor of on-off action, and DMTJ is vertical each to different with double pinnings
The magnetic spin valve tunnel knot of the magnetically fixed layer of property.It includes the reference columns (reference column) for read operation.With storage
Array passes through bit line (bit lines), source line and wordline (word line) and such as write driver (write drive), wordline
Row decoder (word line row decoder), bit line column decoder (bit line column decoder) and detection are put
The connection of the peripheral circuits such as big device (sense amplifier) simultaneously integrated builds up memory architecture.
As shown in Figure 10 and Figure 11, the present invention provides perpendicular magnetic anisotropy DMTJ magnetic tunnel junction elements, based on this
STT-MRAM storage bit units, and the STT-MRAM storage arrays and framework being made up of storage bit unit.Shown by Figure 10
It is the part STT-MRAM storage bit unit arrays that (Figure 10 b) is shared with source line independent (Figure 10 a) and source line.In STT-
In the storage application of MRAM high density, if STT-MRAM storage bit units arrange simultaneous with DRAM design rule using independent source line
The layout of appearance, bit cell area is estimated as 6F2.And array arrangement is shared by source line and reduces average bitcell area, it can be achieved
The up to increase of the STT-MRAM of double figures percentage memory capacity.Shown in Figure 11 is by an input and output module electricity
The structure module (block of memory architecture) of the STT-MRAM memories of road composition.It includes word line row
Decoder (word line row decoder) bit line column decoder (bit line column decoder), write driver
(write drive) and sensor amplifier (sense amplifier).STT-MRAM storage bit units array (including to read behaviour
Make the reference columns that set) it is integrated and realize and be connected with peripheral circuit and normal read/write by bit line, source line and wordline through circuit
Operation.As described above, in read/write processes, the voltage for controlling to be supplied on bit line, source line and wordline by peripheral circuit can
To easily select and access any specific bit location.By the storage array and framework, STT-MRAM memories can fill
The design and issue-resolution of the perpendicular magnetic anisotropy DMTJ magnetic tunnel junction elements provided beneficial to the present invention are provided.
STT-MRAM memories provided in an embodiment of the present invention have following technological merit：
(1) in the case where ensureing the heat endurance of device, the write-in electricity of perpendicular magnetic anisotropy DMTJ magnetic tunnel junction elements
Stream can be reduced to few tens of microamps or lower.Or in 20 nanometers or less of technology node field, further increase storage bit unit
Write operation nargin, expand STT-MRAM memories scalability (scalability) and high density data store and remember
Application in recalling.The magnetic tunnel junction element can also be applied to the design of many bits (multi-level bit) device simultaneously.
(2) due to perpendicular magnetic anisotropy DMTJ magnetic tunnel junction elements perpendicular magnetization stray magnetic field distribution constriction,
Reduce the outer field interactions and interference between magnetic tunnel junction element, and reset current distribution.Be conducive to STT-MRAM memories
Stability raising and densification.
(3) it is decreased to 20 nanometers or less in technology node (technology node), its heat endurance can still meet and set
Meter is required.Be conducive to the densification of STT-MRAM memories.Meanwhile, STT-MRAM memories belong to non-volatility memorizer,
Kept for the phase (data retention) with good data message.
(4) because STT-MRA memories have high speed read/write function.Write operation can be as short as a few nanosecond (nano-
Seconds completed in).Excellent durability (endurance) with write cycle time.By being typically designed, durability may be up to 1016Write
Cycle.
(5) STT-MRAM memories belong to low power consumption memories.Under typical service condition, the operation of read/write operation
Power consumption is only several picojoules (pico-Joule), is suitable for the application in low-power consumption and mobile device.
(6) STT-MRAM memories possess good system and processing compatibility.STT-MRAM is applied to compatible and replaced
Memory component in SOC, ROM and DRAM memory etc., to save space, the memory integrated level of raising reduces work(
Consumption, improves performance and effect.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, it is not used to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the invention etc., it all should include
Within protection scope of the present invention.
Claims (27)
1. a kind of magnetic element for being used to realize spin-torque transmission switching, it is characterised in that the magnetic element includes：
The magnetically fixed layer of first perpendicular magnetic anisotropy, with the demagnetization energy perpendicular to membrane plane direction and corresponding to magnetic vertical it is each to
The anisotropy energy of the opposite sex, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；
First nonmagnetic spacer layers, are attached on the magnetically fixed layer of the first perpendicular magnetic anisotropy；
Perpendicular magnetic anisotropy magnetic free layer, is attached on first nonmagnetic spacer layers, and the perpendicular magnetic anisotropy magnetic is free
Layer has perpendicular to the demagnetization energy in membrane plane direction and corresponding to the anisotropic anisotropy energy of magnetic vertical, and magnetic vertical
Anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；
Second nonmagnetic spacer layers, are attached on the perpendicular magnetic anisotropy magnetic free layer；
The magnetically fixed layer of second perpendicular magnetic anisotropy, is attached on second nonmagnetic spacer layers, and described second is vertical each to different
Property magnetically fixed layer have perpendicular to the demagnetization energy in membrane plane direction and corresponding to the anisotropic anisotropy energy of magnetic vertical, and
Magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；And
Coating, is attached on the magnetically fixed layer of the second perpendicular magnetic anisotropy, and be connected with semiconductor transistor circuitry；
When write current is by the magnetic element, perpendicular magnetic anisotropy magnetic free layer can be by spin-torque transmission effects stable
Magnetic state between switching or switch.
2. magnetic element as claimed in claim 1, it is characterised in that first nonmagnetic spacer layers and second non-magnetic
Any one in sexual isolation layer is barrier layer or is barrier layer.
3. magnetic element as claimed in claim 1 or 2, it is characterised in that the magnetically fixed layer of the first perpendicular magnetic anisotropy and
Any one or all in the magnetically fixed layer of second perpendicular magnetic anisotropy is to form anti-iron by perpendicular magnetic anisotropy magnetic layers
Magnetic coupling multi-layer film structure.
4. magnetic element as claimed in claim 3, it is characterised in that the magnetically fixed layer of the first perpendicular magnetic anisotropy it is vertical
The perpendicular magnetization of magnetization and the magnetically fixed layer of the second perpendicular magnetic anisotropy is arranged in parallel each other or arranged anti-parallel each other；
Any one in the magnetically fixed layer of first perpendicular magnetic anisotropy and the magnetically fixed layer of the second perpendicular magnetic anisotropy hang down
Straight magnetization and another perpendicular magnetization with antiferromagnetic coupling multi-layer film structure be arranged in parallel each other or arranged anti-parallel each other.
5. a kind of magnetic element for being used to realize spin-torque transmission switching, it is characterised in that including：
The magnetically fixed layer of first perpendicular magnetic anisotropy, with the demagnetization energy perpendicular to membrane plane direction and corresponding to magnetic vertical it is each to
The anisotropy energy of the opposite sex, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；
Coupling layer between first nonmagnetic layer, is attached on the magnetically fixed layer of the first perpendicular magnetic anisotropy；
First perpendicular magnetic anisotropy magnetic reference layer, is attached between first nonmagnetic layer on coupling layer, and pass through the first non-magnetic
Property layer coupling layer constitute antiferromagnetic coupling structure with the magnetically fixed layer of the first perpendicular magnetic anisotropy；First perpendicular magnetic anisotropy
Magnetic reference layer has perpendicular to the demagnetization energy in membrane plane direction and corresponding to the anisotropic anisotropy energy of magnetic vertical, and magnetic
Property perpendicular magnetic anisotropy can be more than perpendicular to membrane plane direction demagnetization energy；
First intermediate layer, is attached in the first perpendicular magnetic anisotropy magnetic reference layer；
High spinning polarizability magnetic is attached on first intermediate layer with reference to sublayer, and passes through first intermediate layer and the
The perpendicular magnetic anisotropy composite magnetic of one perpendicular magnetic anisotropy magnetic reference layer formation ferromagnetic coupling is with reference to Rotating fields；
First barrier layer includes MgO crystallizing layers, is attached to the high spinning polarizability magnetic with reference in sublayer；
The free sublayer of high spinning polarizability magnetic, is attached to first barrier layer including on MgO crystallizing layers；
Second intermediate layer, is attached in the free sublayer of high spinning polarizability magnetic；
Perpendicular magnetic anisotropy magnetic free layer, is attached on second intermediate layer, and passes through second intermediate layer and high-spin
The free sublayer of polarizability magnetic carries out Ferromagnetic coupling formation composite magnetic free layer, the perpendicular magnetic anisotropy magnetic free layer tool
Have perpendicular to the demagnetization energy in membrane plane direction and corresponding to the anisotropic anisotropy energy of magnetic vertical, and magnetic vertical it is each to
The opposite sex can be more than the demagnetization energy perpendicular to membrane plane direction；
Second barrier layer, is attached on the perpendicular magnetic anisotropy magnetic free layer, including MgO crystallizing layers；
The magnetically fixed layer of second perpendicular magnetic anisotropy, is attached on second barrier layer, with perpendicular to membrane plane direction
Demagnetization energy and corresponding to the anisotropic anisotropy energy of magnetic vertical, and magnetic vertical anisotropy energy is more than perpendicular to film
The demagnetization energy of in-plane, the magnetically fixed layer of the second perpendicular magnetic anisotropy and the perpendicular magnetic of perpendicular magnetic anisotropy composite magnetic reference layer
Change arranged anti-parallel each other, and
Coating, is attached on the magnetically fixed layer of the second perpendicular magnetic anisotropy, and be connected with semiconductor transistor circuitry；
Wherein the first intermediate layer and the second intermediate layer are magnetic central layer or nonmagnetic intermediate layer；
When write current is by the magnetic element, perpendicular magnetic anisotropy magnetic free layer can be by spin-torque transmission effects steady
Switch between fixed magnetic state or switch.
6. magnetic element as claimed in claim 5, it is characterised in that the magnetically fixed layer of the second perpendicular magnetic anisotropy is anti-iron
Magnetic coupling arrangement, the perpendicular magnetization of the second perpendicular magnetic anisotropy magnetic reference layer is vertical with the first perpendicular magnetic anisotropy magnetic reference layer
Magnetize arranged anti-parallel each other, it includes：
Second perpendicular magnetic anisotropy magnetic reference layer, with the demagnetization energy perpendicular to membrane plane direction and corresponding to magnetic vertical it is each to
The anisotropy energy of the opposite sex, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；
Coupling layer between the second ' nonmagnetic layer, is attached in the second perpendicular magnetic anisotropy magnetic reference layer；
The magnetically fixed layer of the second ' perpendicular magnetic anisotropy, is attached between the second ' nonmagnetic layer on coupling layer, and described the second ' is vertical
Anisotropic magnetic fixed bed has perpendicular to the demagnetization energy in membrane plane direction and anisotropic each to different corresponding to magnetic vertical
Performance, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；
Coupling layer between the second " nonmagnetic layer, is attached on the magnetically fixed layer of the second ' perpendicular magnetic anisotropy；
The magnetically fixed layer of the second " perpendicular magnetic anisotropy, is attached between the second " nonmagnetic layer on coupling layer, and described the second " is vertical
Anisotropic magnetic fixed bed has perpendicular to the demagnetization energy in membrane plane direction and anisotropic each to different corresponding to magnetic vertical
Performance, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction, passes through coupling layer between nonmagnetic layer
Jie is being collectively forming antiferromagnetic coupling knot with the magnetically fixed layer of the second ' perpendicular magnetic anisotropy and the second perpendicular magnetic anisotropy magnetic reference layer
Structure.
7. a kind of magnetic element for being used to realize spin-torque transmission switching, it is characterised in that including：
The magnetically fixed layer of first perpendicular magnetic anisotropy, with the demagnetization energy perpendicular to membrane plane direction and corresponding to magnetic vertical it is each to
The anisotropy energy of the opposite sex, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；
Coupling layer between first nonmagnetic layer, is attached on the magnetically fixed layer of the first perpendicular magnetic anisotropy；
First perpendicular magnetic anisotropy magnetic reference layer, is attached between first nonmagnetic layer on coupling layer, and described first is vertical each
Anisotropy magnetic reference layer has perpendicular to the demagnetization energy in membrane plane direction and corresponding to the anisotropic anisotropy of magnetic vertical
Can, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；It is magnetically fixed by the first perpendicular magnetic anisotropy
Coupling layer and the first perpendicular magnetic anisotropy magnetic reference layer formation antiferromagnetic coupling structure between layer, the first nonmagnetic layer；
First intermediate layer, is attached in the first perpendicular magnetic anisotropy magnetic reference layer；
First high spinning polarizability magnetic is attached on first intermediate layer, by the first perpendicular magnetic anisotropy magnetic with reference to sublayer
Reference layer, the first intermediate layer and the first high spinning polarizability magnetic are combined with reference to the perpendicular magnetic anisotropy of sublayer formation ferromagnetic coupling
Type magnetic reference layer；
First barrier layer, is attached in the first high spinning polarizability magnetic reference sublayer, including MgO crystallizing layers；
The first free sublayer of high spinning polarizability magnetic, is attached on first barrier layer；
Second intermediate layer, is attached in the free sublayer of the first high spinning polarizability magnetic；
Perpendicular magnetic anisotropy magnetic free layer, is attached on second intermediate layer, and the perpendicular magnetic anisotropy magnetic free layer has
Perpendicular to the demagnetization energy in membrane plane direction and corresponding to the anisotropic anisotropy energy of magnetic vertical, and magnetic vertical is each to different
Performance is more than the demagnetization energy perpendicular to membrane plane direction；
3rd intermediate layer, is attached on the perpendicular magnetic anisotropy magnetic free layer；
The second free sublayer of high spinning polarizability magnetic, is attached on the 3rd intermediate layer；
Second barrier layer, is attached in the free sublayer of the second high spinning polarizability magnetic, including MgO crystallizing layers；
Second high spinning polarizability magnetic is attached on second barrier layer with reference to sublayer；
4th intermediate layer, is attached to the second high spinning polarizability magnetic with reference in sublayer；
Second perpendicular magnetic anisotropy magnetic reference layer, is attached on the 4th intermediate layer, the second perpendicular magnetic anisotropy magnetic ginseng
Have according to layer perpendicular to the demagnetization energy in membrane plane direction and corresponding to the anisotropic anisotropy energy of magnetic vertical, and magnetic is vertical
Straight anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction, is existed by Jie of the 4th nonmagnetic intermediate layer, high with second
Second perpendicular magnetic anisotropy composite magnetic reference layer of the spin polarizability magnetic with reference to sublayer formation ferromagnetic coupling type；
Coupling layer between second nonmagnetic layer, is attached in the second perpendicular magnetic anisotropy magnetic reference layer；
The magnetically fixed layer of second perpendicular magnetic anisotropy, is attached between second nonmagnetic layer on coupling layer, and described second is vertical each
The magnetically fixed layer of anisotropy has perpendicular to the demagnetization energy in membrane plane direction and corresponding to the anisotropic anisotropy of magnetic vertical
Can, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction, passes through coupling layer between the second nonmagnetic layer
Jie exist, with the second perpendicular magnetic anisotropy composite magnetic reference layer formation antiferromagnetic coupling structure, wherein first and second is vertical
The perpendicular magnetization of anisotropy composite magnetic reference layer is arranged in parallel each other；And
Coating, is attached on the magnetically fixed layer of the second perpendicular magnetic anisotropy, and be connected with semiconductor transistor circuitry；
Wherein the first intermediate layer, the second intermediate layer, the 3rd intermediate layer and the 4th intermediate layer are magnetic central layer or non magnetic centre
Layer；
When write current is by magnetic element, perpendicular magnetic anisotropy magnetic free layer can be by spin-torque transmission effects in stabilization
Switch between magnetic state or switch.
8. a kind of magnetic element for being used to realize spin-torque transmission switching, it is characterised in that including：
The magnetically fixed layer of first perpendicular magnetic anisotropy, with the demagnetization energy perpendicular to membrane plane direction and corresponding to magnetic vertical it is each to
The anisotropy energy of the opposite sex, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；
Coupling layer between first nonmagnetic layer, is attached on the magnetically fixed layer of the first perpendicular magnetic anisotropy；
First perpendicular magnetic anisotropy magnetic reference layer, is attached between first nonmagnetic layer on coupling layer, and described first is vertical each
Anisotropy magnetic reference layer has perpendicular to the demagnetization energy in membrane plane direction and corresponding to the anisotropic anisotropy of magnetic vertical
Can, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction, passes through coupling layer between the first nonmagnetic layer
Jie with the first straight anisotropic magnetic fixed bed formation antiferromagnetic coupling structure of hanging down；
First intermediate layer, is attached in the first perpendicular magnetic anisotropy magnetic reference layer；
First high spinning polarizability magnetic is attached on first intermediate layer with reference to sublayer, passes through the first nonmagnetic intermediate layer
Jie with the first perpendicular magnetic anisotropy magnetic reference layer formation ferromagnetic coupling perpendicular magnetic anisotropy composite magnetic reference layer；
First barrier layer, is attached in the first high spinning polarizability magnetic reference sublayer, including MgO crystallizing layers；
The first free sublayer of high spinning polarizability magnetic, is attached on first barrier layer；
Second intermediate layer, is attached in the free sublayer of the first high spinning polarizability magnetic；
The first free sublayer of perpendicular magnetic anisotropy magnetic, is attached on second intermediate layer, and pass through the second intermediate layer and first
High spinning polarizability magnetic the first composite magnetic free layer of free sublayer Ferromagnetic coupling formation；
Coupling layer between second nonmagnetic layer, is attached on the first perpendicular magnetic anisotropy magnetic libron；
The second free sublayer of perpendicular magnetic anisotropy magnetic, is attached between second nonmagnetic layer on coupling layer, and with perpendicular to
The demagnetization energy in membrane plane direction and corresponding to the anisotropic anisotropy energy of magnetic vertical, magnetic vertical anisotropy energy is more than
Demagnetization energy perpendicular to membrane plane direction；
3rd intermediate layer, is attached in the free sublayer of the second perpendicular magnetic anisotropy magnetic；
The second free sublayer of high spinning polarizability magnetic, is attached on the 3rd intermediate layer, and passes through the 3rd intermediate layer and the
The free sublayer of two perpendicular magnetic anisotropy magnetic carries out Ferromagnetic coupling the second composite magnetic free layer of formation, wherein, first is combined
Type magnetic free layer and the second composite magnetic free layer formation anti-ferromagnetism coupled structure；
Second barrier layer, is attached in the free sublayer of the second high spinning polarizability magnetic, including MgO crystallizing layers；
Second high spinning polarizability magnetic is attached on second barrier layer with reference to sublayer；
4th intermediate layer, is attached to the second high spinning polarizability magnetic with reference in sublayer；
Second perpendicular magnetic anisotropy magnetic reference layer, is attached on the 4th intermediate layer, with moving back perpendicular to membrane plane direction
Magnetic energy and corresponding to the anisotropic anisotropy energy of magnetic vertical, magnetic vertical anisotropy energy is more than perpendicular to membrane plane side
To demagnetization energy, and pass through the 4th intermediate layer and the second high spinning polarizability magnetic with reference to sublayer formation ferromagnetic coupling type
Second perpendicular magnetic anisotropy composite magnetic reference layer；
Coupling layer between 3rd nonmagnetic layer, is attached in the second perpendicular magnetic anisotropy magnetic reference layer；
The magnetically fixed layer of second perpendicular magnetic anisotropy, is attached between the 3rd nonmagnetic layer on coupling layer, with flat perpendicular to film
The demagnetization energy in face direction and corresponding to the anisotropic anisotropy energy of magnetic vertical, magnetic vertical anisotropy energy is more than vertical
Demagnetization energy in membrane plane direction, and pass through coupling layer between the 3rd nonmagnetic layer and the second perpendicular magnetic anisotropy composite magnetic reference
Layer forms antiferromagnetic coupling structure, the perpendicular magnetization of first and second perpendicular magnetic anisotropy composite magnetic reference layer parallel each other
Row；And
Coating, is attached on the magnetically fixed layer of the second perpendicular magnetic anisotropy, and be connected with semiconductor transistor circuitry；
Wherein the first intermediate layer, the second intermediate layer, the 3rd intermediate layer and the 4th intermediate layer are magnetic central layer or non magnetic centre
Layer；
When write current is by the magnetic element, perpendicular magnetic anisotropy magnetic free layer can be by spin-torque transmission effects stable
Magnetic state between switching or switch.
9. the magnetic element as described in claim any one of 3-8, it is characterised in that described any with antiferromagnetic coupling structure
The magnetically fixed layer of perpendicular magnetic anisotropy or its each magnetic layers, have relative to another or magnetically fixed layer of the second perpendicular magnetic anisotropy
Non-equilibrium perpendicular magnetization structure；And the former has the product of larger total film thickness perpendicular magnetization relative to the latter, passes through kindred effect
To reduce the stray magnetic field for acting on perpendicular magnetic anisotropy magnetic free layer.
10. the magnetic element as described in claim any one of 1-9, it is characterised in that the perpendicular magnetic anisotropy magnetic free layer,
The free sublayer of perpendicular magnetic anisotropy magnetic, perpendicular magnetic anisotropy magnetic reference layer, perpendicular magnetic anisotropy magnetic are with reference to sublayer, vertically respectively to different
Property the magnetically fixed magnetically fixed sublayer of layer and perpendicular magnetic anisotropy in, at least one is included by magnesium-yttrium-transition metal Co, Fe, Ni or it
Alloy and precious metals ag, Au, Pt, Pd interactions, with [Cot1/Pt t2] n or [Cot1/Pd t2] n configurations
Multi-layer film structure；And multi-layer film structure includes ultrathin multi-layer film structure, and ordered alloy structure is cured as in high-temperature heat treatment, and
Produce perpendicular magnetic anisotropic；Wherein t1, t2 are respectively Subnano-class thickness, n >=1.
11. magnetic element as claimed in claim 10, it is characterised in that the perpendicular magnetic anisotropy Magnetic multilayes structure has
(111) and (011) preferential crystallization orientation and texture.
12. the magnetic element as described in claim any one of 5-9, it is characterised in that the perpendicular magnetic anisotropy high-spin pole
The sublayer of rate free magnetic layer and fixed sublayer have crystallography on its interface with barrier layer or MgO crystallizing layers
Matching in texture and electronic band structure, to produce high spinning polarizability and and provide high-spin moment of torsion transmission efficiency.
13. the magnetic element as described in claim any one of 1-9, it is characterised in that the perpendicular magnetic anisotropy magnetic free layer,
Or in the case of multilayer film, the sublayer of each perpendicular magnetic anisotropy magnetic free layer is by high magnetic perpendicular magnetic anisotropy, while having low
The magnetosphere of spin feature is constituted.
14. magnetic element as claimed in claim 12, it is characterised in that the perpendicular magnetic anisotropy high spinning polarizability magnetic
The sublayer of free layer and fixed sublayer are included by transition metal Co, Fe, Ni, or their binary alloy crystalline, or ternary knot
Peritectic alloy, or their amorphous magnetic amorphous alloy layer amorphous alloy layers for being synthesized with boron or other decrystallized elements, and it
Between the multi-layer film structure that is formed.
15. magnetic element as claimed in claim 13, it is characterised in that the perpendicular magnetic anisotropy high spinning polarizability magnetic
Free layer is by magnesium-yttrium-transition metal Co, the CoFeB magnetic amorphous alloy films that Fe bianry alloy is synthesized with the decrystallized element such as boron
Layer, or the multilayer film formed between their different components alloy-layer are constituted；It is connected with gO layers of barrier layer or oxide M
Neighbour, the hybridization of 2p tracks or interface magnetic anisotropy energy effect from the 3d and oxygen of iron or other magnesium-yttrium-transition metals is formed magnetic it is vertical respectively to
The opposite sex；And its thickness is less than film critical value to ensure that magnetic vertical anisotropy energy is more than the demagnetization perpendicular to membrane plane direction
Energy.
16. magnetic element as claimed in claim 13, it is characterised in that the perpendicular magnetic anisotropy magnetic free layer is by MgO/
The multilayer film of CoFeB/Ta (MgO)/CoFeB/MgO (Ta) structure is integrated；The Ta of nonmagnetic metal intermediate layer and coating can be with
Replaced with metal oxide layer MgO thin layers or mutually doping；CoFeB thickness is less than film critical value to ensure that magnetic is hung down
Straight anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction.
17. magnetic element as claimed in claim 12, it is characterised in that the perpendicular magnetic anisotropy high spinning polarizability magnetic
After heat treatment, membrane structure has the preferential crystallization orientation and texture of (001) for free layer and fixed sublayer.
18. the magnetic element as described in claim any one of 3-9, it is characterised in that between the nonmagnetic layer of the magnetic element
Coupling layer includes nonmagnetic metal Ru, Rh, Ta, Cu, Cr, Au, Pt, Pd, or the alloy between them.
19. the magnetic element as described in claim any one of 5-9, it is characterised in that the nonmagnetic intermediate layer can be on demand
Regulation or the partial structurtes or crystallization and texture for separating multilayer film, including nonmagnetic metal Ru, Rh, Ta, Ti, Zr, hf, Nb, V,
W, Cu, Ag, Au, Pt, Pd, Cr, Ir, Os, Re, Mg, Al, Si, B, or the alloy between them, multilayer film, oxide and nitridation
Thing.
20. the magnetic element as described in claim any one of 5-9；Characterized in that, the magnetic central layer can be adjusted on demand
Section or the partial structurtes or crystallization and texture for separating multilayer film, in addition to magnetic transition race metal Co, Fe, Ni, they mutually it
Between the alloy that is formed.
21. the magnetic element as described in claim any one of 1-9, it is characterised in that the magnetic element also includes non magnetic
Inculating crystal layer；The flat interface and substrate crystallization texture that the inculating crystal layer is provided can optimize the performance of element and improve magnetic element
Heat endurance under the high temperature conditions；Wherein inculating crystal layer provide flat interface roughness<0.3 nanometer.
22. magnetic element as claimed in claim 19, it is characterised in that the inculating crystal layer comprises at least one of following：Non-magnetic
Property metal Ru, Rh, Ta, Ti, Zr, hf, Nb, V, W, Cu, Ag, Au, Pt, Pd, Cr, Ir, Os, Re, Mg, Al, Si, B, or they it
Between alloy, multilayer film, oxide and nitride；Magnetic transition race metal Co, Fe, Ni, the alloy that they are formed each other.
23. the magnetic element as described in claim any one of 1-9, it is characterised in that the coating includes：Nonmagnetic metal
Ru, Rh, Ta, Ti, Zr, hf, Nb, V, W, Cu, Ag, Au, Pt, Pd, Cr, Ir, Os, Re, Mg, Al, Si, B, or the conjunction between them
Gold, multilayer film, oxide and nitride.
24. a kind of magnetic memory, including multiple magnetic storage bit locations, a plurality of wordline couple multiple magnetic memory bits lists to connect
Member, and multiple bit lines couple multiple magnetic memory bits units to connect；Each magnetic storage bit location includes at least one magnetic member
Part and multiple coupling parts with being connected semiconductor transistor circuitry；Characterized in that, each or at least one magnetic element by
The magnetically fixed layer of first perpendicular magnetic anisotropy, perpendicular magnetic anisotropy magnetic free layer, the magnetically fixed layer of the second perpendicular magnetic anisotropy, position and the
One and the second nonmagnetic spacer layers between the magnetically fixed layer of perpendicular magnetic anisotropy and perpendicular anisotropy free layer, and coating structure
Have into, perpendicular magnetic anisotropy magnetic free layer perpendicular to the demagnetization energy in membrane plane direction and anisotropic corresponding to magnetic vertical
Anisotropy energy, the magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction, and nonmagnetic spacer layers are located at
Between the magnetically fixed layer of perpendicular magnetic anisotropy and perpendicular magnetic anisotropy magnetic free layer, coating abuts the second perpendicular magnetic anisotropy magnetic and consolidated
The coupling part of given layer and connection semiconductor transistor circuitry, when write current is by the magnetic element, its construction makes it hang down
Straight anisotropic magnetic free layer can be switched or be switched between stable magnetic state by spin-torque transmission effects.
25. magnetic memory as claimed in claim 24, it is characterised in that each magnetic memory bits unit includes at least one
Individual semiconductor transistor, the transistor is connected to described magnetic element by circuit；The non-magnetic sexual isolation of the magnetic element
Layer includes barrier layer.
26. a kind of method for preparing the magnetic element described in claim any one of 1-25, it is characterised in that including following steps
Suddenly：
There is provided the first perpendicular magnetic anisotropy magnetically fixed layer, it has perpendicular to the demagnetization energy in membrane plane direction and hung down corresponding to magnetic
Straight anisotropic anisotropy energy, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；
First nonmagnetic spacer layers are provided；
Perpendicular magnetic anisotropy magnetic free layer is provided, it has perpendicular to the demagnetization energy in membrane plane direction and each corresponding to magnetic vertical
The anisotropy energy of anisotropy, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；
The second nonmagnetic spacer layers are provided, perpendicular magnetic anisotropy magnetic free layer is located between the first and second nonmagnetic spacer layers；
There is provided the second perpendicular magnetic anisotropy magnetically fixed layer, it has perpendicular to the demagnetization energy in membrane plane direction and hung down corresponding to magnetic
Straight anisotropic anisotropy energy, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；
Coating is provided, it abuts the connecting portion of the magnetically fixed layer of the second perpendicular magnetic anisotropy and connection semiconductor transistor circuitry
Point；
When write current is by the magnetic element, perpendicular magnetic anisotropy magnetic free layer can be by spin-torque transmission effects stable
Magnetic state between switching or switch.
27. a kind of method for preparing the magnetic element described in claim any one of 1-25, it is characterised in that including following steps
Suddenly：
Perpendicular magnetic anisotropy magnetic free layer is provided, it has perpendicular to the demagnetization energy in membrane plane direction and each corresponding to magnetic vertical
The anisotropy energy of anisotropy, and magnetic vertical anisotropy energy is more than the demagnetization energy perpendicular to membrane plane direction；
Nonmagnetic spacer layers are provided；
The magnetically fixed layer of perpendicular magnetic anisotropy is provided, it has perpendicular to the demagnetization energy in membrane plane direction and each corresponding to magnetic vertical
The anisotropy energy of anisotropy, the magnetic vertical anisotropy energy be more than perpendicular to membrane plane direction demagnetization energy, it is non magnetic every
Absciss layer is located between perpendicular magnetic anisotropy magnetic free layer and the magnetically fixed layer of perpendicular magnetic anisotropy；
Coating is provided, it abuts the coupling part of the magnetically fixed layer of perpendicular magnetic anisotropy and connection semiconductor transistor circuitry；
When write current is by the magnetic element, perpendicular magnetic anisotropy magnetic free layer can be by spin-torque transmission effects stable
Magnetic state between switching or switch.
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| CN111725386A (en) * | 2019-09-23 | 2020-09-29 | 中国科学院上海微系统与信息技术研究所 | Magnetic memory device and manufacturing method thereof, memory and neural network system |
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