CN105405816A - Packaging structure of fingerprint identification sensor - Google Patents
Packaging structure of fingerprint identification sensor Download PDFInfo
- Publication number
- CN105405816A CN105405816A CN201510992192.3A CN201510992192A CN105405816A CN 105405816 A CN105405816 A CN 105405816A CN 201510992192 A CN201510992192 A CN 201510992192A CN 105405816 A CN105405816 A CN 105405816A
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- China
- Prior art keywords
- metal layer
- fingerprint identification
- identification sensor
- interconnection metal
- dielectric
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention discloses a packaging structure of a fingerprint identification sensor, and belongs to the technical field of semiconductor packaging. A fingerprint identification sensor chip is embedded in a packaging body from a backside; except for a sensing area and electrodes, an insulating layer covers the upper surface of a silicon substrate body and the upper surface of a packaging body; a re-wiring metal layer I is selectively distributed on the surface of the insulating layer and is electrically connected with corresponding electrodes; through holes are formed at the periphery of the fingerprint identification sensor chip and vertically run through the packaging body and the insulating layer; a re-wiring metal layer II is selectively distributed on the lower surface of the packaging body; one end of a metal layer is connected with the re-wiring metal layer I while the other end thereof is connected with the re-wiring metal layer II; and a high-K dielectric layer which is arranged above the sensing area is fixedly connected with an anti-oxidation layer of the re-wiring metal layer I. The packaging structure of the fingerprint identification sensor realizes the effects of improving reliability, reducing packaging thickness, improving sensitivity and the like.
Description
Technical field
The present invention relates to a kind of encapsulating structure of fingerprint Identification sensor, belong to technical field of semiconductor encapsulation.
Background technology
Fingerprint Identification sensor is widely used panel or fuselage etc. in smart phone, touch pad, mobile computing device, electrical equipment, vehicle.Traditional fingerprint Identification sensor is formed by cmos semiconductor technique, Chinese patent CN204167290 discloses a kind of fingerprint Identification sensor encapsulating structure, with reference to figure 1, belong to wire bond package structure, induction chip 9 is connected with bonding wire metal level 6 from its Base top contact by metal wire 10, the vertical space that metal wire 10 will occupy between induction chip 9 and bonding wire metal level 6, usually, wire bond package structure has the projection of 100 microns, cause sensor thickness larger, the existence of metal wire 10 simultaneously, its reliability is made to there is hidden danger, respond to bad, also affect the susceptibility of fingerprint recognition simultaneously.
Summary of the invention
The encapsulation that the object of the invention is to overcome above-mentioned conventional semiconductor devices is not enough, provides a kind of and improves reliability, thinning package thickness, carries the encapsulating structure of high sensitive fingerprint Identification sensor.
the object of the present invention is achieved like this:
The encapsulating structure of a kind of fingerprint Identification sensor of the present invention, it comprises fingerprint Identification sensor chip, described fingerprint Identification sensor chip comprises silica-based body, be arranged at the induction region of the center of top of silica-based body and be surrounded on several electrodes of induction region surrounding
Also comprise encapsulated member, insulating barrier and interconnection metal layer I again, described fingerprint Identification sensor chip embeds encapsulated member by the back side, described insulating barrier covers the upper surface of silica-based body outside described induction region and electrode and the upper surface of encapsulated member, and described interconnection metal layer again I is optionally distributed in the upper surface of insulating barrier and is electrically connected with corresponding electrode;
Also comprise through hole, again interconnection metal layer II and protective layer, described through hole is arranged at the surrounding of fingerprint Identification sensor chip and runs through encapsulated member and insulating barrier up and down, its inwall depositing metal layers, described interconnection metal layer again II is optionally distributed in the lower surface of encapsulated member, its lower surface arranges several pads, one end of described metal level is connected with interconnection metal layer I again, its other end is connected with interconnection metal layer II again, described protective layer filling vias, cover interconnection metal layer II exposed pad, the exposed surface of described pad arranges antioxidation coating II simultaneously again;
The top of described induction region arranges dielectric layer and includes high-k dielectric, and described includes high-k dielectric is fixedly connected with the antioxidation coating I of interconnection metal layer I again by dielectric layer, the dielectric constant of the dielectric constant >=dielectric layer of described includes high-k dielectric.
Further, described through hole inner metal layer and interconnection metal layer II are again one of the forming structure.
Further, the exposed surface of described interconnection metal layer again I covers antioxidation coating I.
Further, the longitudinal section of described through hole is trapezoidal, rectangle.
Further, the circular in cross-section of described through hole or polygon.
Further, the described upper surface of silica-based body and the upper surface flush of encapsulated member.
The invention has the beneficial effects as follows:
1, the present invention by the wafer level of through hole combine with technique maturation again Wiring technique repeatedly form interconnection metal layer again, the back side of encapsulated member will be extended down to outside the electrode signal in the front of fingerprint Identification sensor, overall fingerprint recognition face is smoother, contribute to the susceptibility improving fingerprint Identification sensor, and the top of induction region arranges dielectric layer and includes high-k dielectric, further increase the susceptibility of fingerprint Identification sensor;
Metal wire as shown in the encapsulating structure of conventional fingerprint identification sensor is no longer set in the encapsulating structure of 2, fingerprint Identification sensor of the present invention, the performance of interconnection metal layer again of substituting is more stable, contributes to the reliability of the encapsulating structure improving fingerprint Identification sensor; Meanwhile, because the thickness of interconnection metal layer is again generally less than 10 microns, there is the projection of 100 microns unlike wire bond package, thus be thinned its package thickness on the whole, meet the slimming development trend of the encapsulating structure of fingerprint Identification sensor.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the encapsulating structure of conventional fingerprint identification sensor;
Fig. 2 is the structural representation of the embodiment one of the encapsulating structure of a kind of fingerprint Identification sensor of the present invention;
Fig. 3 is the structural representation of the embodiment two of the encapsulating structure of a kind of fingerprint Identification sensor of the present invention;
Wherein, encapsulated member 1
Through hole 11
Fingerprint Identification sensor chip 2
Silica-based body 21
Induction region 22
Electrode 25
Insulating barrier 3
Interconnection metal layer I 4 again
Antioxidation coating I 41
Metal level 5
Includes high-k dielectric 6
Dielectric layer 61
Interconnection metal layer II 7 again
Pad 71
Protective layer 8
Antioxidation coating II 9.
Embodiment
Describe the present invention more fully hereinafter with reference to accompanying drawing now, exemplary embodiment of the present invention shown in the drawings, thus scope of the present invention is conveyed to those skilled in the art by the disclosure fully.But the present invention can realize in many different forms, and should not be interpreted as being limited to the embodiment set forth here.
Embodiment, see Fig. 2 and Fig. 3
The encapsulating structure of a kind of fingerprint Identification sensor of the present invention, wherein fingerprint Identification sensor chip 2 comprises silica-based body 21, is arranged at the induction region 22 of the center of top of silica-based body 21 and is surrounded on several electrodes 25 of induction region 22 surrounding.The number of electrode 25 can at two or more.The signal of induction region 22 both sides is distributed in respectively with two electrodes in Fig. 2.The cross section of its silica-based body 1 is generally rectangular, and electrode 25 and relevant circuit pattern thereof are arranged at the inside of its silica-based body 21, and find expression in top.Induction region 22 is provided with sensing element, for measure user fingerprint between electric capacity, the image information of the finger of client can be obtained thus.
Fingerprint Identification sensor chip 2 embeds encapsulated member 1 by the back side, the material of encapsulated member 1 is the most conventional with epoxy resin, phenolic resins, organic siliconresin and unsaturated polyester resin at present, and add the inserts such as silica, aluminium oxide wherein, to improve the performance such as intensity, electrical property, viscosity of encapsulating material, and promote the thermomechanical reliability of encapsulating structure.Encapsulating material encapsulating, solidified after, the encapsulated member 1 in solid fraction, can play the effects such as waterproof, protection against the tide, shockproof, dust-proof, heat radiation, insulation.In the present embodiment, adopt advanced wafer level processing technology, therefore the upper surface of silica-based body 21 generally flushes with the upper surface of encapsulated member 1.
The insulating barrier 3 of silica, silicon nitride or resinae dielectric material covers the upper surface of the silica-based body 21 outside induction region 22 and electrode 25 and the upper surface of encapsulated member 1.
The wafer level that interconnection metal layer I 4 employing is ripe more again Wiring technique is optionally distributed in the surface of insulating barrier 3 and is electrically connected with corresponding electrode 25, then the thickness of interconnection metal layer I 4 is not more than 10 microns.Interconnection metal layer I 4 is discontinuous again, its electrode 25 corresponding different respectively, and insulated from each other.In Fig. 2, the interconnection metal layer again I 4 of left part is connected with the electrode 25 in left side, and the interconnection metal layer again I 4 of right part is connected with the electrode 25 on right side, and the interconnection metal layer again I 4 of left part is insulated from each other with the interconnection metal layer again I 4 of right part.The ni/au layers that the exposed surface of interconnection metal layer I 4 is formed by chemical plating process again forms antioxidation coating I 41.
For improving the sensitivity of the encapsulating structure of fingerprint Identification sensor of the present invention further, can arrange the includes high-k dielectric 6 of the material such as sapphire, pottery at the upper surface of induction region 22, it is generally at 50 ~ 400 microns, and is good with 100 ~ 250.Includes high-k dielectric 6 covers the upper surface of whole encapsulating structure, and is fixedly connected with the antioxidation coating I 41 of interconnection metal layer I 4 again by dielectric layer 61, and as shown in Figure 2, the dielectric coefficient of dielectric layer 61 is not more than includes high-k dielectric 6 dielectric coefficient.For cost-saving, includes high-k dielectric 6 only can cover the top of induction region 22, is fixedly connected with, as shown in Figure 3 by dielectric layer 61 with the antioxidation coating I 41 of interconnection metal layer I 4 again.
The surrounding of fingerprint Identification sensor chip 2 arranges through hole 11, and the number of through hole 11 is no less than the number of electrode 25, and through hole about 11 runs through encapsulated member 1 and insulating barrier 3.The longitudinal section of through hole 11 is trapezoidal, rectangle, its circular in cross-section or polygon.The inwall depositing electrically conductive metal level 5 of good performance of through hole 11, the material of metal level 5 includes but not limited to copper.
Interconnection metal layer II 7 adopts ripe Wiring technique to be more optionally distributed in the lower surface of encapsulated member 1 again, and its lower surface arranges pad 71, so that the substrates such as the encapsulating structure of fingerprint Identification sensor of the present invention and PCB, MPCB are connected.Interconnection metal layer II 7 is electrically connected with corresponding electrode 25 again; Interconnection metal layer II 7 is discontinuous again, its electrode 25 corresponding different respectively, and insulated from each other.The thickness of interconnection metal layer II 7 is not more than 10 microns again.One end of metal level 5 is connected with interconnection metal layer I 4 again, its other end is connected with interconnection metal layer II 7 again, realize being electrically connected, thus make the back side being extended down to encapsulated member 1 outside the electrode signal in the front of fingerprint Identification sensor, overall fingerprint recognition face is smoother, contributes to the susceptibility improving fingerprint Identification sensor.Meanwhile, compared with the metal wire in the encapsulating structure of conventional fingerprint identification sensor, then the performance of interconnection metal layer I 4 and interconnection metal layer II 7 is again more stable, contributes to the reliability of the encapsulating structure improving fingerprint Identification sensor.Usually, through hole 11 inner metal layer 5 and interconnection metal layer II 7 more all adopt ripe wafer level again Wiring technique be shaped simultaneously.
Protective layer 8 filling vias 11, cover again interconnection metal layer II 7 exposed pad 71.The exposed surface of pad 71 arranges antioxidation coating II 9, and antioxidation coating II 9 also can be the ni/au layers that chemical plating process is formed.
The repeatedly metal of application technology maturation Wiring technique again in the encapsulating structure of fingerprint Identification sensor of the present invention, by the thickness that adjusted design and the further thinning metal of structure connect up again, effectively be thinned the thickness of whole encapsulating structure, particularly, the thickness of whole encapsulating structure of the present invention is not more than 300 microns, usually, the thickness of whole encapsulating structure is not more than 250 microns.
The encapsulating structure of a kind of fingerprint Identification sensor of the present invention is not limited to above preferred embodiment; therefore; any those skilled in the art without departing from the spirit and scope of the present invention; the any amendment done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all fall in protection range that the claims in the present invention define.
Claims (6)
1. the encapsulating structure of a fingerprint Identification sensor, it comprises fingerprint Identification sensor chip (2), described fingerprint Identification sensor chip (2) comprises silica-based body (21), is arranged at the induction region (22) of the center of top of silica-based body (21) and is surrounded on several electrodes (25) of induction region (22) surrounding
It is characterized in that: also comprise encapsulated member (1), insulating barrier (3) and interconnection metal layer I (4) again, described fingerprint Identification sensor chip (2) embeds encapsulated member (1) by the back side, described insulating barrier (3) covers the upper surface of the silica-based body (21) outside described induction region (22) and electrode (25) and the upper surface of encapsulated member (1), and described interconnection metal layer again I (4) is optionally distributed in the upper surface of insulating barrier (3) and is electrically connected with corresponding electrode (25);
Also comprise through hole (11), interconnection metal layer II (7) and protective layer (8) again, described through hole (11) is arranged at the surrounding of fingerprint Identification sensor chip (2) and runs through encapsulated member (1) and insulating barrier (3) up and down, its inwall depositing metal layers (5), described interconnection metal layer again II (7) is optionally distributed in the lower surface of encapsulated member (1), its lower surface arranges several pads (71), one end of described metal level (5) is connected with interconnection metal layer I (4) again, its other end is connected with interconnection metal layer II (7) again, described protective layer (8) filling vias (11), cover again interconnection metal layer II (7) and exposed pad (71) simultaneously, the exposed surface of described pad (71) arranges antioxidation coating II (9),
The top of described induction region (22) arranges dielectric layer (61) and includes high-k dielectric (6), described includes high-k dielectric (6) is fixedly connected with the antioxidation coating I (41) of interconnection metal layer I (4) again by dielectric layer (61), the dielectric constant of the dielectric constant >=dielectric layer (61) of described includes high-k dielectric (6).
2. the encapsulating structure of fingerprint Identification sensor according to claim 1, is characterized in that: described through hole (11) inner metal layer (5) and interconnection metal layer II (7) are again one of the forming structure.
3. the encapsulating structure of fingerprint Identification sensor according to claim 1, is characterized in that: the exposed surface of described interconnection metal layer again I (4) covers antioxidation coating I (41).
4. the encapsulating structure of fingerprint Identification sensor according to claim 1, is characterized in that: the longitudinal section of described through hole (11) is trapezoidal, rectangle.
5. the encapsulating structure of the fingerprint Identification sensor according to claim 1 or 4, is characterized in that: the circular in cross-section of described through hole (11) or polygon.
6. the encapsulating structure of fingerprint Identification sensor according to claim 1, is characterized in that: the upper surface of described silica-based body (21) and the upper surface flush of encapsulated member (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510992192.3A CN105405816A (en) | 2015-12-28 | 2015-12-28 | Packaging structure of fingerprint identification sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510992192.3A CN105405816A (en) | 2015-12-28 | 2015-12-28 | Packaging structure of fingerprint identification sensor |
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Cited By (7)
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| CN107481979A (en) * | 2017-09-07 | 2017-12-15 | 中芯长电半导体（江阴）有限公司 | The encapsulating structure and method for packing of fingerprint recognition chip |
| CN107968083A (en) * | 2016-10-19 | 2018-04-27 | 兆邦电子股份有限公司 | The encapsulating structure of chip |
| WO2018170814A1 (en) * | 2017-03-23 | 2018-09-27 | 深圳市汇顶科技股份有限公司 | Sensing chip protection structure, and method for manufacturing sensing chip protection structure |
| CN109050027A (en) * | 2016-04-20 | 2018-12-21 | 江苏凯尔生物识别科技有限公司 | The silk-screen printing technique of intelligent terminal surface covering |
| CN109299635A (en) * | 2017-07-25 | 2019-02-01 | 中芯国际集成电路制造(上海)有限公司 | Fingerprint sensor and forming method thereof |
| CN110987280A (en) * | 2019-12-02 | 2020-04-10 | 歌尔科技有限公司 | Waterproof and dustproof pressure sensor and processing method thereof |
| CN112039458A (en) * | 2019-07-19 | 2020-12-04 | 中芯集成电路（宁波）有限公司上海分公司 | Packaging method and packaging structure of bulk acoustic wave resonator |
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| CN110987280A (en) * | 2019-12-02 | 2020-04-10 | 歌尔科技有限公司 | Waterproof and dustproof pressure sensor and processing method thereof |
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