A kind of encapsulating structure of capacitive fingerprint sensing device
Technical field
The present invention relates to integrated antenna package technical field, more particularly, relate to a kind of encapsulating structure of semicoductor capacitor formula fingerprint sensor.
Background technology
In recent years, along with the development of fingerprint identification technology, fingerprint recognition system is applied in daily life more and more, such as fingerprint identification entrance guard system, fingerprint gate lock and fingerprint safe cabinet etc., especially become very common in the application of for example, identity object to identifiers such as personal device (notebook computer, panel computer, smart mobile phone, personal digital assistant (Personal Digital Assistant is called for short PDA) equipment, fingerprint USBKey).
Fingerprint sensor is pressed sensing principle (fingerprint imaging principle and technology), can be divided into optical fingerprint sensor, semicoductor capacitor sensor, semiconductor heat dependent sensor, semiconductor pressure sensor, ultrasonic sensor and radio frequency (Radio Frequency is called for short RF) sensor; Can be divided into again strip fingerprint sensor and planar fingerprint sensor by face shaping.
The capacitive fingerprint sensing device of based semiconductor technique comprises the tube core of silicon material, and its front is formed with sensor array of acquisition units, driving circuit and sensing circuit.Integrated nearly 100000 capacitance type sensors (outer layer insulation) in sensor array of acquisition units, sensor array of acquisition units every bit is a metal electrode, be equivalent to the anode of capacitor, when finger is placed on above this anode, the skin of finger has become another utmost point of electric capacity, and the sensitive face between them has formed the dielectric layer of two interpolars.
Capacitance changes with respect to the distance of sensor array of acquisition units with ridge (near) and paddy (far away).The mankind's fingerprint is made up of tight adjacent concave convex texture, by applying canonical reference discharge current on each pixel, the lines situation of fingerprint just can be detected.
Each pixel is pre-charged to a certain reference voltage, then, is discharged by reference current.The proportionate relationship that on capacitor anode, the change rate of voltage becomes below with the electric capacity on it:
ref=C×dv/dt
The electric discharge of pixel (electric capacity is high) under projection in fingerprint is slower, and pixel (electric capacity is low) electric discharge under recess in fingerprint is very fast.This different discharge rate can detect and convert to 8 outputs by sampling hold circuit (S/H), and this detection method has higher susceptibility to fingerprint projection and indentation, and can form extraordinary original fingerprint image.After encapsulation, sensor cell array is out exposed, for user's finger contacts; Or covering protection material and finger contact on it, thereby protection sensor is not subject to physics and environmental damage, wearing and tearing etc.
Semiconductor element has the sensor array of acquisition units forming by photoetching (or other modes) in its surface conventionally.Sensor die is conventionally quite little, and its contact pad is also accordingly little, thereby must adopt supplementary structure to realize the encapsulation of tube core and assembly, to realize the electrical connection between printed circuit board (PCB) (PCB).Such supplementary structure comprises lead frame and chip carrier etc.
In common semiconductor packaging process, die attachment is to lead frame, realizes the interconnection between small size pad and the large scale lead frame of tube core by tiny connection wire.Conventionally, tube core, lead frame and connection wrapped in wire are in encapsulating material, and it is put in mould by the tube core and the lead frame that have connected wire, to injecting encapsulating material in mould and making encapsulating material sclerosis and realize.
Damage sensor being caused for solving electrostatic breakdown, a kind of preparation method that industry adopts is conventionally the non-fingerprint collecting district in silicon material die surfaces, adopt the metal conducting layer of the very thin golden material of craft of gilding making one, the metal level by silicon through hole, tube core being shown is again connected on the static drainage welding pad of tube core, and this static drainage welding pad is soldered to the system earth end on printed circuit board again.When finger is near sensor, the static on finger is released systematically through above-mentioned conductive path by the metal of sensor surface.
But the biggest problem of this preparation method is craft of gilding, incompatible because introducing the semiconductor technology of metallic element gold and standard, can production manufacturability very poor, yield be very low, and production cost is very high.
In the people's such as Robert Henry Bond U.S. Pat 8378508B2, integrated molded tube core and the panel structure for fingerprint sensor disclosed, wherein, be formed with the tube core of sensor array of acquisition units and at least one conduction panel is arranged on substrate.Tube core and panel are coated in one encapsulating structure, and to protect these elements not to be subject to machinery, electricity and environmental damage, a part for sensor array of acquisition units and panel is exposed, or is covered by protective finish material.This preparation method need to make the conduction panel of a supplementary structure, the conduction panel of making not only increases extra cost, also be difficult to carry out machine assembling in packaging technology, need manually conduction panel to be sticked on printed circuit board substrate, greatly increased encapsulation difficulty.
Summary of the invention
In order to solve the problems of the technologies described above, the object of the invention is to provide a kind of encapsulating structure that has low cost, simple, the easy large-scale production of packaging technology, has the semicoductor capacitor formula fingerprint sensor of anti-static function.
For achieving the above object, technical scheme of the present invention is as follows:
An encapsulating structure for semicoductor capacitor formula fingerprint sensor, described sensor is planar sensor or strip sensor, groove base plate, connection wire, connector and note seal structure that it comprises semiconductor transducer tube core, is made up of insulating material; Described semiconductor transducer tube core is used for gathering fingerprint and has image storage unit, image reading circuit unit, pin and sensor pixel array; The bottom of described substrate recess is for carrying and fix described sensor die by bonding agent, its front, the back side or side have multilayer interconnection lead-in wire and are electrically connected the contact through hole between multilayer interconnection lead-in wire, with and fluting face on be printed with the connection pad being formed by one or more conducting metal edge strip; Described connection wire is for connecting the pin of described sensor die and the connection pad of substrate; Described connector is for the electrical connection between groove base plate and printed circuit board; Wherein, described connection pad is connected by the one or more ground pin that are formed at substrate front side or the back side and the interconnecting line in its each layer and described connector, and one or more ground pin of described connector and the ground level of printed circuit board are electrical connected; Described sensor die pin, substrate conducting metal edge strip and be connected wire and encapsulate by note seal structure, described note closure material fills up the space of substrate recess surrounding so that together with substrate fits tightly with tube core.
Preferably, described sensor pixel array face is parallel with the fluting face of described groove base plate.
Preferably, described sensor die is made up of one or more layers silicon-based semiconductor; Described sensor die surface coverage has one deck protective finish; Described protective finish material is inorganic material or organic polymer material.
Preferably, described inorganic material is the smooth or amorphous diamond of silicon nitride, silit, alumina silicate, barium titanate, strontium titanates, oxidation; Described organic polymer material is polyimide or teflon.
Preferably, described connector is arranged on the back side of described groove base plate, for being electrically connected between described substrate and printed circuit board.
Preferably, the material of described groove base plate is resin, plastics or pottery; The material of described note seal structure is the insulating material such as epoxy resin or plastics; Described note seal structure is to form by one of injecting glue technology, casting process or the molded technology of integrated circuit.
Preferably, described connection wire adopts metal material aluminium or the gold of tens micron diameters to make; By described connection wire, the pin of a narrower die front side side is electrically connected to the wherein connection pad of one or both sides fluting face of described substrate front side.
Preferably, described substrate is rectangle, for carrying planar sensor die; Described rectangular substrate groove length and width size is greater than the length and width size of planar sensor die, groove depth is higher than the height of planar sensor die, and by described connection wire, the pin of a narrower die front side side is electrically connected to the wherein connection pad of both sides fluting face of substrate front side.
Preferably, described substrate is strip, for carrying strip sensor die; Described strip substrate recess length and width size is greater than the length and width size of strip sensor die, the degree of depth of fluting is higher than the height of strip sensor die, and by described connection wire, the pin of the narrower both sides of die front side is electrically connected to the wherein connection pad of both sides fluting face of substrate front side.
Preferably, described connector is terminal pad grid array or ball grid array, the connection pad being made up of described metal edge strip is connected by the one or more ground pin that are formed at substrate front side or the back side and the interconnecting line in its each layer and terminal pad grid array or ball grid array, described terminal pad grid array or ball grid array are for the electrical connection between substrate and printed circuit board, and one or more ground pin of described terminal pad grid array or ball grid array and the ground level of printed circuit board are connected.。
Can find out from technique scheme; the encapsulating structure of semicoductor capacitor formula fingerprint sensor provided by the invention; it embeds and is printed on the structure in the one or more metal edge strip assemblies on substrate by adopting by the substrate of semicoductor capacitor formula fingerprint sensor tube core; not only there is low cost, simple, the easy large-scale production of packaging technology, also there is anti-static function simultaneously.
Accompanying drawing explanation
The structural representation that Figure 1 shows that encapsulating structure first embodiment of semicoductor capacitor formula fingerprint sensor of the present invention, wherein, this encapsulating structure comprises planar fingerprint sensor assembly;
Figure 2 shows that the structure partial cut-open view of encapsulating structure first embodiment of semicoductor capacitor formula fingerprint sensor of the present invention;
Figure 3 shows that the structure right section schematic diagram of encapsulating structure first embodiment of semicoductor capacitor formula fingerprint sensor of the present invention;
Figure 4 shows that the structure side diagrammatic cross-section of encapsulating structure first embodiment of semicoductor capacitor formula fingerprint sensor of the present invention;
Figure 5 shows that the structural representation of encapsulating structure second embodiment of semicoductor capacitor formula fingerprint sensor of the present invention, wherein, this encapsulating structure comprises strip fingerprint sensor assembly;
Figure 6 shows that the structure right section schematic diagram of encapsulating structure first embodiment of semicoductor capacitor formula fingerprint sensor of the present invention
Figure 7 shows that the schematic rear view with grid array terminal pad of second embodiment of the invention strip sensor module
Figure 8 shows that the schematic rear view with ball grid array of second embodiment of the invention strip sensor module
Figure 9 shows that the side schematic view with ball grid array of second embodiment of the invention strip sensor module
[symbol description in figure]
100, planar sensor module
101, rectangular substrate
The groove of 101a, rectangular substrate
102, the planar sensor die of semiconductor
The sensor pixel array in 102a, the planar sensor die of semiconductor front
The pin of 102b, the positive side of the planar sensor die of semiconductor
103, be printed on the metal edge strip on rectangular substrate
104, be printed on the wherein connection pad of a side fluting face of rectangular substrate
105, connector
200, strip sensor module
201, strip-like-shaped substrate
The groove of 201a, strip-like-shaped substrate
202, semiconductor strip sensor die
The sensor pixel array in 202a, semiconductor strip sensor die front
The pin of 202b, the positive both sides of semiconductor strip sensor die
203, be printed on the metal edge strip on strip-like-shaped substrate
204, be printed on the connection pad of strip-like-shaped substrate front side both sides fluting face
205, terminal pad grid array
206, ball grid array
300, finger
301, connect wire
302, note seal structure
303, protective finish
Embodiment
Describe in conjunction with the drawings one exemplary embodiment in detail, it is more obvious that These characteristics of the present invention and advantage will become, and in the accompanying drawings, adopt element like similar Reference numeral representation class between each accompanying drawing.Described accompanying drawing is exemplary rather than draws in proportion.
It should be noted that, the encapsulating structure of semicoductor capacitor formula fingerprint sensor of the present invention, it is by embedding semicoductor capacitor formula fingerprint sensor tube core in the groove of groove base plate, and by being printed on the one or more metal edge strip assemblies on substrate, by sensor die and the electrical connection of outside connector, finally encapsulate all-in-one-piece sensor die product structure.Sensor-packaging structure of the present invention goes for encapsulating the planar sensor of capacitive fingerprint sensing device or capacitive fingerprint sensing device strip sensor.Below in conjunction with accompanying drawing 1 to 4, the first embodiment to the planar sensor of capacitive fingerprint sensing device of the present invention is described in further detail, by reference to the accompanying drawings 5 to 9, the second embodiment of capacitive fingerprint sensing device strip sensor of the present invention is described in further detail.
[embodiment mono-]
Refer to Fig. 1 to Fig. 4, wherein, Figure 1 shows that the structural representation of encapsulating structure first embodiment of semicoductor capacitor formula fingerprint sensor of the present invention, wherein, this encapsulating structure comprises planar fingerprint sensor assembly 100.As shown in the figure, planar sensor module 100 mainly comprises rectangular substrate 101 and planar sensor die 102, the front of this groove base plate 101 has groove 101a, the length and width size of its groove 101a is slightly larger than planar sensor die 102, and the groove depth of groove 101a is a little more than the height of planar sensor die 102.In the present embodiment, this encapsulating structure can be embedded into sensor die 102 planar sensor die 102 fixed area of substrate recess 101a bottom, and the front that makes planar sensor die 102 on surface level a little less than the fluting face of substrate 101.Rectangular substrate 101 can adopt the insulating material such as resin known in the field, plastics or pottery to make, and it can have from front, the back side or side the interconnecting line (not shown) in its each layer.
Planar sensor die 102 normally has the silicon-based semiconductor that is formed at one or more layers, in these layers, can lay respectively and comprise as integrated circuit (IC)-components such as transistor, electric capacity, resistance and interconnection lines, this integrated circuit (IC)-components can form by photoetching or other semiconductor fabrication process conventionally.
Particularly, planar sensor die 102 has the two-dimensional array 102a of image storage unit (not shown) formed thereon, image reading circuit (not shown) and sensor pixel.By the bonding agent between the back side of planar sensor die 102 and the bottom of substrate recess 101a, planar sensor die 102 can be physically connected to substrate recess 101a.The front of planar sensor die 102 is generally rectangle, connect wire 301 and pin (PAD) 102b of the narrower side in planar sensor die 102 fronts can be electrically connected to the wherein connection pad 104 of a side fluting face of substrate 101 fronts, connection wire 301 can adopt the metal material such as aluminium or gold of tens micron diameters.
The fluting face of substrate 101 is printed with one or more metal edge strip 103, and these metal edge strips 103 adopt the metal materials such as copper, aluminium or the gold of conduction to make.Metal edge strip 103 is by being formed at substrate 101 fronts or the back side and the (not shown) that is connected with one or more ground pin of the connector 105 at substrate 101 back sides of the interconnecting line (not shown) in its each layer likely.
Connector 105 is for the electrical connection between substrate 101 and printed circuit board, and one or more ground pin of connector 105 and the ground level of printed circuit board are connected, and form thus ESD electrostatic leakage path.For example, in the time that finger 300 is pressed the two-dimensional array 102a in planar sensor die 102 fronts, because of planar sensor die 102 fluting face a little less than substrate 101 on surface level, the finger 300 one or more conducting metal edge strip 103 that first the fluting face of contact substrate 101 is printed, its static carrying can, by the above-mentioned ESD electrostatic leakage path ground of releasing, effectively avoid static to cause serious harm to the sensor die 102 of silicon material.
The pin one 02b of the narrower side in planar sensor die 102 fronts and substrate 101 fronts wherein a side fluting face connection pad 104 and is connected wire 301 and is all wrapped in and notes in seal structure 302, make the front (especially sensor pixel array 102a part) of planar sensor die 102 out exposed.
Planar sensor is coated with one deck protective finish 303 on the front of tube core 102, and these protective finish 303 materials can adopt inorganic material coating; For example, silicon nitride, silit, alumina silicate or amorphous diamond, can make greatly to strengthen wearing quality with the surface of finger contact, especially for abrasive grains like this.
Certainly; protective finish 303 materials also can adopt other organic polymer materials; for example; polyimide (Polyimide (KaptonTM)) or teflon (PTFF (TeflonTM)), can make to have good hydrophobicity, corrosion-resistant, acid and alkali-resistance, the good characteristic such as wear-resisting with the surface of finger contact like this.
The material that forms note seal structure 302 can be the insulating material such as epoxy resin known in the field or plastics.Note envelope can realize by injecting glue or casting process, also can adopt one of molded technology of various integrated circuit known in the art to form note seal structure 302.Note seal structure 302 wrap pin one 02b, the substrate 101 of tube core 102 connection pad 104, connect wire 301, and make to note space that closure material fills up substrate recess 101a surrounding and make together with substrate 101 fits tightly with planar sensor die 102.Note seal structure 302 can protect planar sensor die 102 pin one 02b, substrate 101 pad 104 be connected wire 301 and be not subject to machinery, electricity and environmental damage.
The back side of substrate 101 is provided with connector 105, for being electrically connected between substrate 101 and printed circuit board, the back side interconnection of the miscellaneous part installation component of a part of constructing as resulting device, thus allow the electrical interconnection of sensor module 100 in another electric system.Obtain thus and complete embedded and be printed on one or more metal edge strip structures on substrate and the planar sensor module 100 for fingerprint collecting of sensor die based on substrate.
[embodiment bis-]
Please refer to the drawing 5, to Fig. 9, wherein, Figure 5 shows that the structural representation of encapsulating structure second embodiment of semicoductor capacitor formula fingerprint sensor of the present invention, and wherein, this encapsulating structure comprises strip fingerprint sensor assembly 200.Strip fingerprint sensor assembly 200 mainly comprises this groove type strip substrate 201 and strip sensor die 202, have and be formed at its front or the back side and the interconnecting line in its each layer (draw and do not show) likely, the front of this groove type strip substrate 201 has groove 201a, its groove 201a length and width size is slightly larger than strip sensor die 202, and the groove depth of groove 201a is a little more than the height of tube core 202.In the present embodiment, strip sensor die 202 is embedded into strip sensor die 202 fixed area of substrate recess 201a bottom, and the front that makes strip sensor die 202 on surface level a little less than the fluting face of substrate 201.Strip substrate 201 can adopt the insulating material such as resin known in the field, plastics or pottery to make, and it can be from front, the back side or side by the interconnecting line in its each layer (draw and do not show).
Strip sensor die 202 normally has the silicon-based semiconductor that is formed at one or more layers, in these layers, can lay respectively and comprise as integrated circuit (IC)-components such as transistor, electric capacity, resistance and interconnection lines, this integrated circuit (IC)-components can form by photoetching or other semiconductor fabrication process conventionally.
Particularly, strip sensor die 202 has the two-dimensional array 202a of image storage unit (not shown) formed thereon, image reading circuit (not shown) and sensor pixel.By the bonding agent between the back side of tube core 202 and the bottom of substrate recess 201a, tube core 202 is physically connected to substrate recess 201a.Connect wire 301 and the pin two 02b of tube core 202 narrower both sides, front can be electrically connected to the wherein connection pad 204 of both sides fluting face of substrate 201 fronts, connection wire 301 adopts the metal material such as aluminium or gold of tens micron diameters.
The fluting face of substrate 201 is printed with one or more metal edge strip 203, and these metal edge strips 203 adopt the metal materials such as copper, aluminium or the gold of conduction to make.Metal edge strip 203 is by being formed at substrate 201 fronts or the back side and one or more ground pin that likely the interconnecting line (not shown) in its each layer and substrate 201 Runners type both sides are evenly distributed with terminal pad grid array 205 or ball grid array 206 (not shown) that is connected, terminal pad grid array 205 or ball grid array 206 are for the electrical connection between substrate 201 and printed circuit board, one or more ground pin of terminal pad grid array 205 or ball grid array 206 and the ground level of printed circuit board are connected, form thus ESD electrostatic leakage path.
For example, in the time that finger 300 slips over the two-dimensional array 202a in strip sensor die 202 fronts, because of tube core 202 fluting face a little less than substrate 201 on surface level, the finger 300 one or more conducting metal edge strip 203 that first the fluting face of contact substrate 201 is printed, its static carrying can, by the above-mentioned ESD electrostatic leakage path ground of releasing, effectively avoid static to cause serious harm to the sensor die 202 of silicon material.
The pin two 02b of tube core 202 narrower both sides, front and substrate 201 fronts wherein both sides fluting face connection pad 204 and is connected wire 301 and is all wrapped in and notes in seal structure 302, make the front (especially sensor pixel array 202a) of tube core 202 out exposed.
Strip sensor is coated with one deck protective finish 303 on the front of tube core 202, and protective finish 303 materials can be used inorganic coating; For example, silicon nitride, silit, alumina silicate or amorphous diamond, can make greatly to strengthen wearing quality with the surface of finger contact, especially for abrasive grains like this.
Certainly; protective finish 303 materials also can adopt other organic polymer materials; for example; polyimide (Polyimide (KaptonTM)) or teflon (PTFF (TeflonTM)), can make to have good hydrophobicity, corrosion-resistant, acid and alkali-resistance, the good characteristic such as wear-resisting with the surface of finger contact like this.
The material that forms note seal structure 302 can be the insulating material such as epoxy resin known in the field or plastics.Note envelope can realize by injecting glue or casting process, also can adopt one of molded technology of various integrated circuit known in the art to form note seal structure 302.Note seal structure 302 wrap pin two 02b, the substrate 201 of tube core 202 connection pad 204, connect wire 301, and make to note space that closure material fills up substrate recess 201a surrounding and make together with substrate 201 fits tightly with tube core 202.Note seal structure 302 can protect tube core 202 pin two 02b, substrate 201 pad 204 be connected wire 301 and be not subject to machinery, electricity and environmental damage.
The Runners type both sides of substrate 201 are evenly distributed with terminal pad grid array 205 or ball grid array 206, for being electrically connected between substrate 201 and printed circuit board, the back side interconnection of the miscellaneous part installation component of a part of constructing as resulting device, thus allow the electrical interconnection of sensor module 200 in another electric system.Obtain thus and complete embedded and be printed on one or more metal edge strip structures on substrate and the strip sensor module 200 for fingerprint collecting of sensor die based on substrate.
Above-described is only the preferred embodiments of the present invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization instructions of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.