CN104036264B - Manufacture method, fingerprint Identification sensor and the electronic device of fingerprint Identification sensor - Google Patents
Manufacture method, fingerprint Identification sensor and the electronic device of fingerprint Identification sensor Download PDFInfo
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- CN104036264B CN104036264B CN201410313044.XA CN201410313044A CN104036264B CN 104036264 B CN104036264 B CN 104036264B CN 201410313044 A CN201410313044 A CN 201410313044A CN 104036264 B CN104036264 B CN 104036264B
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Abstract
This application involves method, fingerprint Identification sensor and the electronic devices of manufacture fingerprint Identification sensor.It is a kind of manufacture fingerprint Identification sensor method include：Prepare substrate；Embossed layer is formed on the substrate；Multiple grooves are formed in the embossed layer；Conductive material is filled in the multiple groove, forms fingerprint detection element.Multiple grooves are formed in the embossed layer includes：Adjust the depth of the multiple groove, so that when detector gap of the fingerprint ridge between one of the first induction electrode and a plurality of first driving electrodes, rate of change of capacitance between one of first induction electrode and a plurality of first driving electrodes, and so that, when detector gap of the fingerprint ridge positioned at one of the second induction electrode and a plurality of second driving electrodes between, the rate of change of capacitance between one of the second induction electrode and a plurality of second driving electrodes is 30% to 80%.
Description
Technical field
This disclosure relates to which fingerprint Identification sensor, knows in particular to the method for manufacture fingerprint Identification sensor, fingerprint
Individual sensor and electronic device.
Background technology
The certain biological characteristics of human body (such as finger print/palm print) are the unique features of human body, and their complexity energy
Enough enough feature quantities provided for discriminating.
The identification technologies such as finger print/palm print fingerprint are current most ripe and cheap biometrics identification technologies.Fingerprint
Identification technology is widely used.We are not only it can be seen that the figure of fingerprint identification technology, city in gate inhibition, attendance checking system
There is the application of more fingerprint recognitions on field：As laptop, mobile phone, automobile, bank paying all can employing fingerprint identify
Technology.In particular with the continuous development of smart mobile phone, will occur largely such as utilizing fingerprint with the relevant demand of fingerprint recognition
Identification unlock mobile phone, protection privacy information, guarantee transaction security etc..
Sensor for fingerprint recognition includes resistance sensor, optical sensor and capacitance type sensor etc..
Capacitance type fingerprint identification sensor is typically formed on monocrystalline silicon substrate, therefore is existed when finger force presses
Splintering problem occurs.In order to solve the problems, such as silicon chip receive user press many times or it is improper press and it is flimsy, now determine
The general silicon substrate using the higher sapphire protection fingerprint sensor of hardness.But sapphire cost is higher, causes entirely to refer to
Line identifying system cost is higher.It is generally formed by cmos semiconductor technique using the fingerprint sensor of silicon substrate, this method work
Skill is complicated, causes the capacitance type fingerprint identification sensor production cost based on silicon substrate expensive.
Fingerprint Identification sensor is manufactured to need to form certain amount sensing unit on base material such as silicon substrate.If induction is single
The lazy weight of member, then the resolution ratio of fingerprint recognition is low, this will lead to not accurately carry out fingerprint recognition or need user more
Secondary input fingerprint and keep user experience poor.In addition, the base material area of fingerprint Identification sensor is relatively limited.In limited areal
The fingerprint sensor for forming high-resolution is also a technological challenge.
Some fingerprinting schemes, for example, Apple Inc. a scheme, also need increase a drive ring.This drive ring
On the one hand it for providing electric field to user's finger, is on the other hand used to be electromagnetically shielded to prevent external electromagnetic field from producing fingerprint recognition
Raw interference.This causes entire fingerprint recognition component complicated, increases cost.
It needs a kind of to form sufficient amount sensing unit on limited areal base material or further increase fingerprint recognition
The scheme of resolution ratio.
Above- mentioned information is only used for reinforcing the understanding to the background of the disclosure, therefore it disclosed in the background technology part
May include the information not constituted to the prior art known to persons of ordinary skill in the art.
Invention content
The application discloses a kind of fingerprint Identification sensor and the electronic device including the fingerprint Identification sensor.
Other characteristics and advantages of the disclosure will be apparent from by the following detailed description, or partially by the disclosure
Practice and acquistion.
According to one aspect of the disclosure, a kind of method of manufacture fingerprint Identification sensor includes：Prepare substrate；Described
Embossed layer is formed in substrate；Multiple grooves are formed in the embossed layer；Conductive material is filled in the multiple groove, is formed
Fingerprint detection element, wherein the fingerprint detection element includes：First induction electrode；A plurality of first driving electrodes, it is described a plurality of
First driving electrodes are arranged in parallel and are separated from each other, and a plurality of first driving electrodes are respectively between first induction electrode
It is separatedly opposite to define multiple first detector gaps；Second induction electrode is parallelly set relatively with first induction electrode
Set and be located at the side opposite with a plurality of first driving electrodes of first induction electrode；A plurality of second driving electrodes,
A plurality of second driving electrodes are arranged in parallel and are separated from each other, and a plurality of second driving electrodes are felt with described second respectively
Answer electrode gap open it is opposite to define multiple second detector gaps, a plurality of second driving electrodes are driven with described a plurality of first
Moving electrode is arranged in correspondence in the side opposite with first induction electrode of the second electrode, wherein in the coining
Forming multiple grooves in layer includes：Adjust the depth of the multiple groove so that when fingerprint ridge is located at the first induction electrode and more
When detector gap between one of first driving electrodes of item, between one of the first induction electrode and a plurality of first driving electrodes
Rate of change of capacitance, and make when between detection of the fingerprint ridge between one of the second induction electrode and a plurality of second driving electrodes
When gap, the rate of change of capacitance between one of the second induction electrode and a plurality of second driving electrodes is 30% to 80%.
According to some embodiments, the pitch between pitch and adjacent second driving electrodes between adjacent first driving electrodes
Be equal to each other and in 50-60 μ ms, the width of the width of the first driving electrodes and the second driving electrodes be equal to each other and
In 20-45 μ ms, the size of the first detector gap and the second detector gap is equal to each other and in 20-40 μ m.
According to some embodiments, the substrate is strengthened glass, tempered glass, ceramics, sapphire, PET film or FPC bases
Bottom.
According to some embodiments, the embossed layer is ultraviolet-curing resin, hot-setting adhesive, light binding or from dry glue.
According to another aspect of the present disclosure, a kind of fingerprint Identification sensor includes：Substrate；The pressure being formed on the substrate
Layer is printed, the coining layer surface is provided with multiple grooves；And fingerprint detection element, it is placed in the multiple groove；Wherein institute
Stating fingerprint detection element includes：First induction electrode；A plurality of first driving electrodes, a plurality of first driving electrodes parallel arrangement
And be separated from each other, a plurality of first driving electrodes are opposite multiple to define at interval with first induction electrode respectively
First detector gap；Second induction electrode is parallelly oppositely arranged with first induction electrode and incudes positioned at described first
The side opposite with a plurality of first driving electrodes of electrode；A plurality of second driving electrodes, a plurality of second driving electrodes
Be arranged in parallel and be separated from each other, a plurality of second driving electrodes respectively with second induction electrode at interval it is opposite with
Multiple second detector gaps are defined, a plurality of second driving electrodes are arranged in correspondence with a plurality of first driving electrodes in institute
The side opposite with first induction electrode of second electrode is stated, wherein the multiple groove has a depth t, described first
The thickness of induction electrode and second induction electrode and a plurality of first driving electrodes and a plurality of second driving electrodes
It is defined by the depth t, the multiple groove is configured so that so that when fingerprint ridge is located at first induction electrode and described
When detector gap between one of a plurality of first driving electrodes, one of first induction electrode and a plurality of first driving electrodes
Between rate of change of capacitance, and make when fingerprint ridge be located at second induction electrode and a plurality of second driving electrodes it
When detector gap between one, the rate of change of capacitance between one of second induction electrode and a plurality of second driving electrodes is
30% to 80%.
According to some embodiments, the pitch between pitch and adjacent second driving electrodes between adjacent first driving electrodes
Be equal to each other and in 50-60 μ ms, the width of the width of the first driving electrodes and the second driving electrodes be equal to each other and
In 20-45 μ ms, the size of the first detector gap and the second detector gap is equal to each other and in 20-40 μ m.
According to some embodiments, the substrate is strengthened glass, tempered glass, ceramics, sapphire, PET film or FPC bases
Bottom.
According to some embodiments, the embossed layer is ultraviolet-curing resin, hot-setting adhesive, light binding or from dry glue.
According to some embodiments, the fingerprint detection element further includes the first reference electrode and the second reference electrode and a plurality of
First illusory driving electrodes and a plurality of second illusory driving electrodes, first reference electrode are parallel with first induction electrode
Ground is oppositely arranged and is located at the side opposite with a plurality of first driving electrodes of first induction electrode, second ginseng
Electrode is examined parallelly to be oppositely arranged with second induction electrode and positioned at second induction electrode and described a plurality of second
The opposite side of driving electrodes, a plurality of first illusory driving electrodes are arranged in parallel and are electrically connected to each other, and described a plurality of first
Illusory driving electrodes are arranged in correspondence with a plurality of first driving electrodes in first reference electrode and first sense
The side that electrode is opposite, a plurality of second illusory driving electrodes is answered to be arranged in parallel and be electrically connected to each other, described a plurality of second is empty
If driving electrodes are arranged in correspondence with a plurality of second driving electrodes in second reference electrode and second induction
The opposite side of electrode.
According to some embodiments, the fingerprint detection element includes metallic particles, graphene, carbon nanotube or conductive polymer
Sub- material.
According to some embodiments, the fingerprint detection element includes conductive grid.
According to another aspect of the present disclosure, a kind of electronic device includes that aforementioned any one of them fingerprint recognition such as senses
Device.
According to some embodiments, the electronic device includes viewing area and non-display area, the fingerprint Identification sensor position
In the viewing area.
According to some embodiments, the electronic device includes viewing area and non-display area, the fingerprint Identification sensor position
In the non-display area.
According to some embodiments of the disclosure, electrode and lead are formed on non-silicon-based bottom by using embossed layer, it can
To improve the reliability of sensor, and the fingerprint sensor of high-resolution can be formed in limited areal at lower cost.Root
The purpose of adjustment rate of change of capacitance may be implemented, reach by adjusting the depth t of groove according to some embodiments of the disclosure
Better fingerprint detection effect.
Description of the drawings
Its example embodiment is described in detail by referring to accompanying drawing, the above and other feature and advantage of the disclosure will become
It is more obvious.
Fig. 1 schematically shows the fundamental diagram of capacitance type fingerprint detecting element；
Fig. 2 schematically shows the structure chart of the swiping formula fingerprint Identification sensor according to one example embodiment of the disclosure；
Fig. 3 schematically shows the sectional view obtained along the AA ' lines of Fig. 1；
Fig. 4 schematically shows the sectional view obtained along the BB ' lines of Fig. 1；
Fig. 5 schematically shows the conductive grid that can be used for fingerprint detection element；
Fig. 6 schematically shows the structure chart of the swiping formula fingerprint Identification sensor according to one example embodiment of the disclosure；
Fig. 7 shows a plurality of linear fingerprint image obtained when swiping moves above fingerprint Identification sensor when finger；
Fig. 8 shows the complete finger print image that a plurality of linear fingerprint pattern pieces together；
Fig. 9 schematically shows the structural schematic diagram of the fingerprint detection element according to one example embodiment of the disclosure；
Figure 10 schematically shows the structural schematic diagram of the fingerprint detection element according to one example embodiment of the disclosure；And
Figure 11 schematically shows the electronic device according to one example embodiment of the disclosure.
Specific implementation mode
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, thesing embodiments are provided so that the disclosure will
Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.In the figure in order to clear
It is clear, exaggerate the thickness of region and layer.Identical reference numeral indicates same or similar part in figure, thus will omit it
Detailed description.
In addition, described feature, structure or characteristic can be incorporated in one or more implementations in any suitable manner
In example.In the following description, many details are provided to fully understand embodiment of the disclosure to provide.However,
It will be appreciated by persons skilled in the art that can be with technical solution of the disclosure without one in the specific detail or more
It is more, or other methods, constituent element, material may be used etc..In other cases, be not shown in detail or describe known features,
Material or operation are to avoid fuzzy all aspects of this disclosure.
The disclosure provides a kind of fingerprint Identification sensor and the electronic device including the fingerprint Identification sensor, can reduce
Cost, and sufficient amount driving electrodes can be formed on limited areal base material to improve fingerprint recognition resolution ratio.
Fig. 1 schematically shows the fundamental diagram of capacitance type fingerprint detecting element.
As shown in Figure 1, capacitance type fingerprint detecting element includes fingerprint identification unit, and cover with protective layer 117.Protective layer
117 for protecting fingerprint detection element.Protective layer can be such as diamond-like-carbon, silica or UV glue.Protective layer can lead to
It crosses spraying technology or printing technology is formed.Fingerprint identification unit may include induction electrode 101 and driving electrodes 103, therebetween
With a detector gap 107.Fingerprint identification unit is multiple, and can arrange uniline or multirow, only shows that a fingerprint is known in figure
Other unit.The induction electrode 101 and driving electrodes 103 of fingerprint identification unit may make up a basic capacitor.
When finger 190 presses above fingerprint identification unit or when swiping, between induction electrode 101 and driving electrodes 103
Capacitive coupling can have different changes above detector gap 107 according to fingerprint ridge 192 or fingerprint valley 194.This be because
Dielectric constant for fingerprint ridge is typically 10 to 20 times of air (fingerprint valley).Therefore, fingerprint identification unit compares under fingerprint ridge
There is bigger equivalent capacity under fingerprint valley.By detecting the capacitance variations (or voltage change thereon) of fingerprint identification unit,
It can be determined that above the unit be fingerprint ridge or fingerprint valley, to obtain fingerprint image.
Fig. 2 schematically shows the structure chart of the swiping formula fingerprint Identification sensor according to one example embodiment of the disclosure.
Fig. 3 shows the sectional view that the AA ' lines along Fig. 2 obtain.Fig. 4 shows the sectional view that the BB ' lines along Fig. 2 obtain.
As in Figure 2-4, fingerprint Identification sensor 100 include substrate 111, the embossed layer 113 that is formed in substrate 111 with
And it is formed in the fingerprint detection element 110 in embossed layer 113.113 surface of embossed layer is provided with multiple grooves 115, fingerprint detection
Element 110 is placed in groove 115.According to example embodiment, fingerprint detection element 110 can be filled up completely groove 115, that is, refer to
The upper surface of line detecting element 110 is concordant with the upper surface of embossed layer 113, and but the present disclosure is not limited thereto.
As shown in Fig. 2, fingerprint detection element 110 includes induction electrode 101 and a plurality of driving opposite with induction electrode 101
Electrode 103.A plurality of driving electrodes 103 can be arranged in parallel and be separated from each other.Induction electrode 101 can be with a plurality of driving electrodes 103
It is substantially vertical.A plurality of driving electrodes 103 are spaced apart to define multiple detector gaps 107 respectively with induction electrode 101.Every drive
Moving electrode 103 may make up a fingerprint identification unit with induction electrode 101, to induction electrode 101 and 103 structure of a plurality of driving electrodes
At multiple fingerprint identification units.
Pitch d between adjacent driven electrode 103 can be equal to each other.The width w1 of driving electrodes 103 can be equal to each other.Sense
Answer the width w2 of electrode 101 that can be equal to each other with the width w1 of driving electrodes 103.The size of detector gap 107 can be equal to each other.
But the disclosure is not limited.
As shown in Figures 3 and 4, the pitch d between adjacent driven electrode 103 for example can be in 40-60 μ ms.Driving electrodes
103 width w1 for example can be in 20-45 μ ms.The width g of detector gap 107 for example can be in 20-40 μ ms.Detection
The width g in gap 107 can be equal to each other.The width w2 of induction electrode 101 for example can be in 50-60 μ ms.
According to an embodiment, the pitch d between adjacent driven electrode 103 is 50 μm, and the identification for realizing 508PPI is differentiated
Rate.
Substrate 111 can be strengthened glass, tempered glass, ceramics, sapphire or PET, PMMA, PC etc..Substrate 111
May be flexible printed circuit board (FPC) substrate, such as BT, FR4, FR5.
Embossed layer 113 may be, for example, as ultraviolet-curing resin, hot-setting adhesive, light binding or from dry glue.
The material of induction electrode 101 and driving electrodes 103 may be the same or different.It forms induction electrode 101 and drives
The material of moving electrode 103 can be selected from the one or two of ITO (tin indium oxide) or metal simple-substance particle such as gold, silver, copper, zinc, aluminium
Above, metal alloy conductive material, graphene, carbon nano-tube material, nanometer conductive material such as nano silver etc., but the disclosure is unlimited
In this.
According to an example embodiment, induction electrode 101 and driving electrodes 103 may include conductive grid 105, such as Fig. 5 institutes
Show.At this moment, groove 115 has structure corresponding with conductive grid 105.Using conductive grid, cost is reduced, when still can reach
The good result of fingerprint recognition.
As previously mentioned, the variation of the capacitance between fingerprint detection and induction electrode and driving electrodes is related.More specifically,
Change rate Δ C%=the Δ C/C, wherein C of capacitance between induction electrode and driving electrodes are induction electrode and single driving
Capacitance between electrode, Δ C be fingerprint ridge be located between induction electrode and the single driving electrodes detector gap when capacitance
Variation, Δ C% is rate of change of capacitance.
Inventor has found, by adjusting rate of change of capacitance so that rate of change of capacitance Δ C% be 30% to 80% it is available compared with
Good fingerprint detection effect.
Since the dielectric constant of the fingerprint ridge of each individual is different, the dielectric of the fingerprint ridge of the different fingers of phase same person
Constant is also different, therefore identical induction electrode and driving electrodes are arranged, and capacitance variations can there are one distributions.It can lead to
It crosses and randomly selects several people's progress normal use tests, to ensure that such as 80% or more test result meets rate of change of capacitance Δ
C% is 30% to 80%.When rate of change of capacitance Δ C% involved in the disclosure is 30% to 80%, refer both to randomly select several people
In the case of carrying out normal use test, it is 30% to 80% that 80% or more test result, which meets rate of change of capacitance Δ C%,.
It can be readily appreciated that in the case where recognition resolution determines, the capacitance between induction electrode and driving electrodes mainly takes
Certainly in the thickness of electrode.However, existing method for making its electrode is mainly semiconductor technology or sputtering process, the thickness tune of electrode
Section is limited by technique.Inventor does not have found to have the thickness by adjusting electrode in conventional method to realize capacitance variations
The scheme of rate adjustment.
According to the method for the making fingerprint Identification sensor of disclosure embodiment, embossed layer is formed on non-silicon-based bottom
113, groove 115 is then formed in embossed layer 113.Electrode pattern is formed by filling conductive material in groove 115.Pass through
The depth t for adjusting groove 115 may be implemented the purpose of adjustment rate of change of capacitance, reach better fingerprint detection effect.Groove
115 depth t for example can be in 20nm-10 μ ms.
According to some embodiments, fingerprint Identification sensor 100 may also include lead (not shown), with fingerprint detection element
110 connections, for fingerprint detection element 110 to be connected to external circuit, such as fingerprint recognition circuit 109.Lead can also house
In groove, and there can be material identical with induction electrode 101 and driving electrodes 103.Lead may also comprise conductive grid.
Fingerprint recognition circuit 109 can sequentially provide drive signal to driving electrodes 103, and can be examined by induction electrode 101
Inductive signal is surveyed, to identify fingerprint.But the present disclosure is not limited thereto.
According to the fingerprint Identification sensor of disclosure embodiment, electrode is formed on non-silicon-based bottom by using embossed layer
And lead, the reliability of sensor can be improved, and the fingerprint of high-resolution can be formed in limited areal at lower cost
Sensor.
When finger pressing is above the fingerprint Identification sensor with structure as shown in Figure 2, know from the multiple fingerprint
Other unit can get the linear fingerprint image of reflection a fingerprint ridge and fingerprint valley.When finger is sliding above fingerprint Identification sensor
When wiping mobile, a plurality of linear fingerprint image is can get, as shown in Figure 6.The a plurality of linear fingerprint pattern capable assembling is complete at one
Whole fingerprint image, as shown in Figure 7.
The manufacturing method of fingerprint Identification sensor according to disclosure embodiment is described below.
First, prepare substrate 111, such as PET base.Then, embossed layer 113 can be formed in substrate 111.Embossed layer
113 can be ultraviolet-curing resin, hot-setting adhesive, light binding or from dry glue etc..Then, in table of the embossed layer 113 far from substrate 111
Groove 115 is formed by imprint process on face.Groove 115 can be for example latticed according to actual needs.
Then, doctor blade technique can be used to fill such as silver ink in groove 115, and under the conditions of about 150 DEG C
Baking sintering, makes the silver-colored simple substance in silver ink sinter conducting electrode patterns into, to form induction electrode 101 and driving electricity
Pole 103, and lead is formed as needed.According to an embodiment, silver ink water solid content about 35%, solvent volatilizees in sintering.
Fig. 8 schematically shows the structural schematic diagram of the fingerprint detection element according to another example embodiment of the disclosure.
As shown in figure 8, fingerprint detection element 210 according to the present embodiment and fingerprint detection element 110 shown in Fig. 2
Further include reference electrode 101 ' and illusory driving electrodes 103 ' difference lies in fingerprint detection element 210.
Reference electrode 101 ' can be parallelly oppositely arranged with induction electrode 101, and positioned at induction electrode 101 and a plurality of drive
The opposite side of moving electrode 103.
Reference electrode 101 ' is enough to provide noise at least partly to eliminate common-mode noise and post at a distance from driving electrodes 103
Raw coupling reference.In some embodiments, reference electrode 101 ' and induction electrode 101 can have equal length and width,
And it can be arranged in parallel.Reference electrode 101 ' can be similar to induction electrode 101 and sense fingerprint ridge/fingerprint valley signal like that, but
Its substantial remitted its fury.Reference electrode 101 ' is closely spaced with induction electrode 101 and has similar size, two electricity
Pole can generate roughly equal noise and parasitic signal.The noise and parasitic signal of equal coupling can be for example by subtracting two
Signal on electrode and be eliminated.
According to some embodiments, induction electrode 101 and reference electrode 101 ' can be coupled to difference by difference filter 123
Amplifier 125.
A plurality of illusory driving electrodes 103 ' parallel arrangement and can be electrically connected to each other, a plurality of illusory driving electrodes 103 ' with
A plurality of driving electrodes 103 are arranged in correspondence in the other side of reference electrode 101 ', i.e. the side opposite with induction electrode 101.
Illusory driving electrodes 103 ' are spaced apart with reference electrode 101 ' with gap 107 '.It gap 107 ' can be with 107 phase of gap
Together.Illusory driving electrodes 103 ' can be connected to reference potential during fingerprint image senses, such as be grounded.In fingerprint image sense
Any instant of time surveyed, one in driving electrodes 103 can be encouraged by drive signal, and remaining driving electrodes 103
It can be coupled to reference potential, such as be grounded.Using the arrangement, noise is coupled substantially equally to induction electrode 101 and reference
Electrode 101 ', so as to be eliminated for example, by difference amplifier 125.The circuit arrangement eliminated or reduce noise jamming can root
Various modes, the disclosure are taken to be limited not to this according to actual demand.
According to the embodiment, the accuracy of fingerprint recognition can be improved, eliminate the coupling of the fingerprint ridge outside detector gap
Close interference.
Fig. 9 schematically shows the structural schematic diagram of the fingerprint detection element according to another example embodiment of the disclosure.
As shown in figure 9, fingerprint detection element 310 according to the present embodiment and fingerprint detection element 110 shown in Fig. 2
Further include the second induction electrode 101 " and a plurality of second driving electrodes 103 " difference lies in fingerprint detection element 310.Second induction
Electrode 101 " can be electrically connected with induction electrode 101.
Second induction electrode 101 " is parallel with induction electrode 101 and is set up in parallel, and positioned at induction electrode 101 with it is a plurality of
The opposite side of driving electrodes 103.
A plurality of second driving electrodes 103 " are arranged in parallel and are separated from each other.A plurality of second driving electrodes 103 " are respectively with
Two induction electrodes 101 " are opposite to define multiple second detector gaps 107 " at interval.A plurality of second driving electrodes 103 " with it is more
The first driving electrodes of item 103 are arranged in correspondence with the side opposite with induction electrode 101 of the second induction electrode 101 ".
In the present embodiment, pass through driving electrodes 103, induction electrode 101 and the second driving electrodes 103 ", the second induction
Electrode 101 " constitutes a pair of line imaging device, for generating more accurate fingerprint image.By finger first pass through detector gap 107 or
107 " determine the moving direction of finger.In addition, can be become by comparing the signal of induction electrode 101 and the second induction electrode 101 "
Change determine finger movement speed (such as：The time for passing through detector gap 107 and 107 " by calculating identical fingerprint portion
Difference obtains the movement speed of finger), more accurate fingermark image is obtained with this.
Figure 10 schematically shows the structural schematic diagram of the fingerprint detection element according to another example embodiment of the disclosure.
As shown in Figure 10, fingerprint detection element 410 according to the present embodiment combines Fig. 8 and fingerprint shown in Fig. 9 inspection
Survey element.Difference lies in fingerprint detection elements 410 also to wrap with fingerprint detection element 310 shown in Fig. 9 for fingerprint detection element 410
Include two reference electrodes 101 ' and two groups of a plurality of illusory driving electrodes 103 '.Two groups of a plurality of illusory driving electrodes 103 ' can be electric each other
Connection.
One reference electrode 101 ' can be parallelly oppositely arranged with induction electrode 101 and positioned at induction electrode 101 with it is more
The opposite side of driving electrodes 103.Another reference electrode 101 ' can be parallelly oppositely arranged simultaneously with the second induction electrode 101 "
Positioned at the side opposite with a plurality of second driving electrodes 103 " of the second induction electrode 101 ".
One group of a plurality of illusory driving electrodes 103 ' is arranged in parallel and is electrically connected to each other.The a plurality of illusory driving electrodes of the group 103 '
It is arranged in correspondence in the side opposite with induction electrode 101 of reference electrode 101 ' with a plurality of driving electrodes 103.Another group a plurality of
Illusory driving electrodes 103 ' are arranged in parallel and are electrically connected to each other.The a plurality of illusory driving electrodes 103 ' of the group and a plurality of second driving electricity
Pole 103 " is arranged in correspondence in the side opposite with the second induction electrode 101 " of reference electrode 101 '.
Other aspects of fingerprint detection element 410 according to the present embodiment are similar with aforementioned fingerprint detecting element, herein
It repeats no more.
Figure 11 schematically shows the electronic device 500 according to one example embodiment of the disclosure, wherein may include above-mentioned
Fingerprint Identification sensor.Electronic device 500 is such as can be smart mobile phone, tablet computer.
As shown, electronic device includes transparent cover plate 501.Transparent cover plate 501 includes viewing area 511 and non-display area
515.Fingerprint Identification sensor may be disposed at viewing area 511 or non-display area 515.
According to some embodiments, a part for the non-display area of transparent cover plate is used as the substrate 111 of fingerprint Identification sensor.
It is particularly shown and described the illustrative embodiments of the disclosure above.It should be understood that the present disclosure is not limited to institute
Disclosed embodiment, on the contrary, the disclosure is intended to cover the various modifications comprising in the spirit and scope of the appended claims
And equivalent arrangements.
Claims (14)
1. a kind of method of manufacture fingerprint Identification sensor, including：
Prepare substrate；
Embossed layer is formed on the substrate；
Multiple grooves are formed in the embossed layer；
Conductive material is filled in the multiple groove, fingerprint detection element is formed, wherein the fingerprint detection element includes：
First induction electrode；
A plurality of first driving electrodes, a plurality of first driving electrodes are arranged in parallel and are separated from each other, and described a plurality of first drives
Moving electrode is opposite to define multiple first detector gaps at interval with first induction electrode respectively；
Second induction electrode is parallelly oppositely arranged with first induction electrode and positioned at first induction electrode and institute
State the opposite side of a plurality of first driving electrodes；
A plurality of second driving electrodes, a plurality of second driving electrodes are arranged in parallel and are separated from each other, and described a plurality of second drives
Moving electrode is opposite to define multiple second detector gaps at interval with second induction electrode respectively, and described a plurality of second drives
Moving electrode is arranged in correspondence with a plurality of first driving electrodes in second induction electrode and first induction electrode
Opposite side；
Wherein described first induction electrode and a plurality of first driving electrodes, second induction electrode and described a plurality of second
Driving electrodes constitute a two-wire fingerprint image imager；
Wherein, multiple grooves are formed in the embossed layer includes：Adjust the depth of the multiple groove so that when fingerprint ridge position
When detector gap between one of the first induction electrode and a plurality of first driving electrodes, the first induction electrode and this plurality of first
Rate of change of capacitance between one of driving electrodes, and to be located at the second induction electrode and a plurality of second driving electricity when fingerprint ridge
When detector gap between one of pole, the rate of change of capacitance between one of the second induction electrode and a plurality of second driving electrodes is
30% to 80%.
2. the method as described in claim 1, wherein the pitch between adjacent first driving electrodes and adjacent second driving electrodes
Between pitch be equal to each other and in 50-60 μ ms, the width of the width of the first driving electrodes and the second driving electrodes that
This is equal and in 20-45 μ ms, and the size of the first detector gap and the second detector gap is equal to each other and in 20-40 μm of model
In enclosing.
3. method as claimed in claim 2, wherein the substrate is strengthened glass, tempered glass, ceramics, sapphire, PET film
Or FPC substrates.
4. method as claimed in claim 3, wherein the embossed layer is ultraviolet-curing resin, hot-setting adhesive, light binding or certainly dry
Glue.
5. a kind of fingerprint Identification sensor, including：
Substrate；
The embossed layer being formed on the substrate, the coining layer surface are provided with multiple grooves；And
Fingerprint detection element is placed in the multiple groove；
The wherein described fingerprint detection element includes：
First induction electrode；
A plurality of first driving electrodes, a plurality of first driving electrodes are arranged in parallel and are separated from each other, and described a plurality of first drives
Moving electrode is opposite to define multiple first detector gaps at interval with first induction electrode respectively；
Second induction electrode is parallelly oppositely arranged with first induction electrode and positioned at first induction electrode and institute
State the opposite side of a plurality of first driving electrodes；
A plurality of second driving electrodes, a plurality of second driving electrodes are arranged in parallel and are separated from each other, and described a plurality of second drives
Moving electrode is opposite to define multiple second detector gaps at interval with second induction electrode respectively, and described a plurality of second drives
Moving electrode is arranged in correspondence with a plurality of first driving electrodes in second induction electrode and first induction electrode
Opposite side；
Wherein described first induction electrode and a plurality of first driving electrodes, second induction electrode and described a plurality of second
Driving electrodes constitute a two-wire fingerprint image imager；
Wherein the multiple groove has a depth t, first induction electrode and second induction electrode and described a plurality of
The thickness of first driving electrodes and a plurality of second driving electrodes is defined by the depth t, and the multiple groove is configured to make
When must make when fingerprint ridge the detector gap between one of first induction electrode and a plurality of first driving electrodes,
Rate of change of capacitance between one of first induction electrode and a plurality of first driving electrodes, and to be located at when fingerprint ridge
When detector gap between one of second induction electrode and a plurality of second driving electrodes, second induction electrode and
Rate of change of capacitance between one of a plurality of second driving electrodes is 30% to 80%.
6. fingerprint Identification sensor as claimed in claim 5, wherein the pitch between adjacent first driving electrodes and adjacent
Pitch between two driving electrodes is equal to each other and in 50-60 μ m, the width of the first driving electrodes and the second driving electricity
The width of pole is equal to each other and in 20-45 μ m, the size of the first detector gap and the second detector gap be equal to each other and
In 20-40 μ ms.
7. fingerprint Identification sensor as claimed in claim 5, wherein the substrate is strengthened glass, tempered glass, ceramics, indigo plant
Jewel, PET film or FPC substrates.
8. fingerprint Identification sensor as claimed in claim 5, wherein the embossed layer is ultraviolet-curing resin, hot-setting adhesive, light
Solid glue or from dry glue.
9. fingerprint Identification sensor as claimed in claim 5, wherein the fingerprint detection element further includes the first reference electrode
With the second reference electrode and a plurality of first illusory driving electrodes and a plurality of second illusory driving electrodes,
First reference electrode is parallelly oppositely arranged with first induction electrode and positioned at first induction electrode
The side opposite with a plurality of first driving electrodes, second reference electrode and second induction electrode are parallelly opposite
It is arranged and is located at the side opposite with a plurality of second driving electrodes of second induction electrode,
The a plurality of first illusory driving electrodes are arranged in parallel and are electrically connected to each other, a plurality of first illusory driving electrodes and institute
A plurality of first driving electrodes are stated to be arranged in correspondence in the side opposite with first induction electrode of first reference electrode,
The a plurality of second illusory driving electrodes are arranged in parallel and are electrically connected to each other, a plurality of second illusory driving electrodes and institute
A plurality of second driving electrodes are stated to be arranged in correspondence in the side opposite with second induction electrode of second reference electrode.
10. fingerprint Identification sensor as claimed in claim 5, wherein the fingerprint detection element includes metallic particles, graphite
Alkene, carbon nanotube or conducting polymer composite.
11. fingerprint Identification sensor as claimed in claim 5, wherein the fingerprint detection element includes conductive grid.
12. a kind of electronic device, including such as claim 5 to 11 any one of them fingerprint Identification sensor.
13. electronic device as claimed in claim 12, wherein the electronic device includes viewing area and non-display area, the finger
Line identification sensor is located at the viewing area.
14. electronic device as claimed in claim 12, wherein the electronic device includes viewing area and non-display area, the finger
Line identification sensor is located at the non-display area.
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| CN201410313044.XA CN104036264B (en) | 2014-07-02 | 2014-07-02 | Manufacture method, fingerprint Identification sensor and the electronic device of fingerprint Identification sensor |
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| TWI515665B (en) * | 2015-03-25 | 2016-01-01 | 速博思股份有限公司 | Finger-swiping biometric recognition apparatus |
| CN104794454A (en) | 2015-04-30 | 2015-07-22 | 京东方科技集团股份有限公司 | Fingerprint recognition device, display screen and display device |
| TWI566120B (en) * | 2015-05-21 | 2017-01-11 | 速博思股份有限公司 | Biometric recognition apparatus with reflection-shielding electrode and method of detection control the same |
| CN106295477A (en) * | 2015-06-03 | 2017-01-04 | 小米科技有限责任公司 | A kind of terminal carrying out fingerprint recognition |
| CN106808898B (en) * | 2015-12-01 | 2020-04-21 | 昇印光电（昆山）股份有限公司 | Plate and manufacturing method thereof |
| CN106203307B (en) * | 2016-06-30 | 2020-01-31 | 联想(北京)有限公司 | kinds of sensors and electronic equipment |
| CN108629235A (en) * | 2017-03-21 | 2018-10-09 | 南昌欧菲生物识别技术有限公司 | The preparation method of fingerprint Identification sensor |
| CN109425367B (en) * | 2017-09-04 | 2022-09-27 | 深圳市宝佳业投资有限公司 | Graphene sensor range protection system |
| CN111079592B (en) * | 2019-12-04 | 2020-10-27 | 清华大学 | Ceramic fingerprint image generating and extracting method and device |
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| CN103530609A (en) * | 2013-10-11 | 2014-01-22 | 北京京东方光电科技有限公司 | Fingerprint identification element, display screen and display device |
| CN103635870A (en) * | 2011-06-27 | 2014-03-12 | 夏普株式会社 | Capacitance distribution detection method, capacitance distribution detection circuit, touch sensor system, and information input/output device |
| CN103886299A (en) * | 2014-03-27 | 2014-06-25 | 成都费恩格尔微电子技术有限公司 | Packaging structure of capacitive fingerprint sensor |
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| CN103635870A (en) * | 2011-06-27 | 2014-03-12 | 夏普株式会社 | Capacitance distribution detection method, capacitance distribution detection circuit, touch sensor system, and information input/output device |
| CN103530609A (en) * | 2013-10-11 | 2014-01-22 | 北京京东方光电科技有限公司 | Fingerprint identification element, display screen and display device |
| CN103886299A (en) * | 2014-03-27 | 2014-06-25 | 成都费恩格尔微电子技术有限公司 | Packaging structure of capacitive fingerprint sensor |
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