CN105405741A - Local cleaning device and method for wafer - Google Patents
Local cleaning device and method for wafer Download PDFInfo
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- CN105405741A CN105405741A CN201410345393.XA CN201410345393A CN105405741A CN 105405741 A CN105405741 A CN 105405741A CN 201410345393 A CN201410345393 A CN 201410345393A CN 105405741 A CN105405741 A CN 105405741A
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Abstract
The invention provides a local cleaning device for a wafer, and the device is used for cleaning a marking region of the wafer. The device comprises a wafer aligning apparatus, a wafer clamping disc, a wafer lifting control apparatus, a high-purity gas high-pressure blowing pipeline located above the clamping disc in a downward manner, and a negative pressure sucking pipeline which is horizontally opposite to a blowing position. The device and method, which are provided by the invention, carry out cleaning in a physical manner, reduce the technological cost, improves the technological efficiency, and effectively improves the IC manufacturing technology.
Description
Technical field
The present invention relates to semiconductor fabrication process, especially, relate to a kind of wafer laser carve number after local cleaning device and method.
Technical background
In integrated circuit fabrication process, before wafer rolls off the production line, need to use laser incising machine to carry out laser incising number to each wafer, make every wafer have an independently digital identity, to carry out effective management and supervision in integrated circuit fabrication.The position that wafer is carved number is engraved in the alignment notch place (notch) of wafer usually, in laser incising process, owing to can produce the white residue of fine particle, therefore after laser incising number, needs independently cleaning procedure.
Wafer to carve number after clean be all cleaned by wet chemistry means, one is that groove-type cleaning machine cleans; One is monolithic cleaning.The common ground of two kinds of cleanings are all clean the overall situation of wafer, for ensureing, to the cleaning performance of white residue and not other regions of polluting wafer, to need the enough scavenging periods of guarantee and use enough chemical liquids.Although above-mentioned cleaning means can ensure to clean up white residue, from integrated circuit scale of mass production management view, there is the deficiency that cost is high and the time is long.
For this reason, need a kind of low cost badly, high efficiency wafer to carve number after local cleaning device and method.
Summary of the invention
The invention provides a kind of wafer carve number after local cleaning device, adopt high-purity gas to wafer region at quarters carry out partial high pressure rush blow, cost is low and efficiency is high.Concrete, this device comprises: this device comprises wafer alignment device, wafer chuck, wafer elevating control device, be positioned at high-purity gas high pressure downward above chuck rushes blowpipe road and blow with punching the negative-pressure ward pipeline that position relative level places.
Wherein, described wafer chuck is gripped by the collapsible mechanical pin of some.
Wherein, described wafer elevating control device comprises the supporting structure be positioned at below chuck, chuck side can be risen or declined to make its certain angle that tilts.
Wherein, the scope at described chuck angle of inclination is 30 ° ~ 80 °.
Wherein, described high-purity gas high pressure rushes high-purity gas that blowpipe road adopts and comprises and be not limited to high pure nitrogen, high-purity compressed air etc.
Wherein, described high-purity gas pressure limit is 80-150psi.
Accordingly, present invention also offers a kind of wafer local clean method, for cleaning wafer region at quarter, the method comprises the following steps:
A., wafer to be cleaned is provided, is aimed at by wafer alignment device, confirm wafer carve number position;
B. wafer is placed on wafer chuck, and the position of its number of quarter is positioned at high-purityly rush below blowing pipeline nozzle;
C. by wafer elevating control device, the rise of chuck side or decline are made its certain angle that tilts;
D. the nozzle being rushed blowpipe road by high-purity gas high pressure carries out high pressure blow smelting operation to the region after laser incising number;
E. while steps d or before, open negative pressure air draft pipeline, high pressure rushed the white residue product blown and siphons away in time.
Wherein, in step c, the scope at described chuck angle of inclination is 30 ° ~ 80 °.
Wherein, described high-purity gas comprises and is not limited to high pure nitrogen, high-purity compressed air etc.
Wherein, in steps d, the gas pressure range be suitable for is 80-150psi.
The local cleaning device that the present invention proposes and method are undertaken by physical means, reduce process costs, improve process efficiency, have carried out effective improvement to IC manufacturing process.
Accompanying drawing explanation
By reading the detailed description done non-limiting example done with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 is the front view according to the local cleaning device in a specific embodiment of the present invention;
Fig. 2 is the oblique view of cleaning device 45° angle in Fig. 1.
Embodiment
The invention provides a kind of wafer carve number after local cleaning device, adopt high-purity gas to wafer region at quarters carry out partial high pressure rush blow, cost is low and efficiency is high.For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the invention are described in detail.
Disclosing hereafter provides many different embodiments or example is used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts of specific examples and setting are described.Certainly, they are only example, and object does not lie in restriction the present invention.In addition, the various specific technique that the invention provides and the example of material, but those of ordinary skill in the art can recognize the property of can be applicable to of other techniques and/or the use of other materials.It should be noted that parts illustrated in the accompanying drawings are not necessarily drawn in proportion.Present invention omits the description of known assemblies and treatment technology and process to avoid unnecessarily limiting the present invention.
The local cleaning device that the present invention proposes and method are undertaken by physical means, have low cost, high efficiency feature, have carried out effective improvement to IC manufacturing process.Cleaning device in the present invention and method can be used alone, also can with wafer laser machine at quarter conbined usage or with monolithic cleaner conbined usage.
This local cleaning device comprises wafer alignment device, wafer chuck, wafer elevating control device, the high-purity gas high pressure be positioned at above chuck straight down rush blowpipe road and to blow position relative with punching, the negative-pressure ward pipeline of horizontal positioned.
Wherein, described wafer chuck is gripped by the collapsible mechanical pin of some.
Wherein, described wafer elevating control device comprises the supporting structure be positioned at below chuck, chuck side can be risen or declined to make its certain angle that tilts.
Wherein, the scope at described chuck angle of inclination is 30 ° ~ 80 °.
Wherein, described high-purity gas high pressure rushes high-purity gas that blowpipe road adopts and comprises and be not limited to high pure nitrogen, high-purity compressed air etc.
Wherein, described high-purity gas pressure limit is 80-150psi.
Be partial cleaning arrangement schematic diagram after wafer in one embodiment of the present of invention is carved number shown in Fig. 1, wherein, described wafer is Silicon Wafer, and carries out laser incising number at the alignment notch place (notch) of wafer.
In the present embodiment, for this device and the integrated rear use of single chip washer, called after single chip washer a.
First, the wafer after being completed by laser incising number is placed on single chip washer a; Wafer is broadcasted to wafer alignment system by plant machinery hand, makes the notch of wafer or gulde edge unification is a direction, and object is the laser incising position ensureing each all purge wafers; Next, will treat that purge wafer is placed on the chuck of level by manipulator.
After wafer places, chuck one deck rises or declines and makes its angle that tilts by equipment automatically, and this angle needs by needing the operating state of impurity and quantity and the single chip washer a taken out to determine according to cleaning, is 30 ° ~ 80 °, in the present embodiment, the angle of this chuck is 45 degree; In another embodiment, this angle is 35 °; In an other again embodiment, this angle is 80 °.
After reaching set angle, high-purityly rush blowing pipeline and intake-gas pipeline is opened simultaneously, described high-purity gas comprises and is not limited to high pure nitrogen, high-purity compressed air etc., and in this example, preferably, high-purity gas is high pure nitrogen; The gas pressure range be suitable for of high-purity gas is 80-150psi, and in one embodiment, concrete pressure is 80psi; In another embodiment, pressure is 150psi; In the present embodiment, pressure is 90psi.
Next, make described high-purity gas aim at laser ablation position winding-up 5s, concrete scavenging period is determined according to the dosage of impurity and the operating state of cleaning machine, increase that can be suitable or minimizing, until complete removal of contamination; Meanwhile, high pressure is rushed the white residue product blown and siphons away in time by intake-gas pipeline.Described intake-gas pipeline is preferably bell mouth shape, is conducive to fully collecting by the residue blown off.
After process time completes, high-purityly rush blowing pipeline and intake-gas pipeline is closed simultaneously; Chuck slows down to horizontal level by lifting structure simultaneously, and wafer is extracted out by manipulator; The washed with de-ionized water chamber delivering to equipment is finally cleaned, then dry, completes whole cleaning process.
In the process, intake-gas pipeline can be set as Chang Kai or to rush blowpipe road synchronous with high pressure; High pressure rushes blowpipe road gas pressure intensity and the punching time of blowing can set on equipment.
The wet-cleaned cavity of monolithic cleaning equipment comprises and is not limited to washed with de-ionized water, and diluted chemical liquid cleans, and contact round brush cleans, mega sonic wave cleaning etc.
This device also can be integrated in laser incising machine inside, after namely wafer completes laser incising number, repeats said process, complete to quarters position white residue high pressure rush and blow.
Compared to prior art, the cleaning method that the present invention proposes is when cleaning, high pressure rushes blowpipe road and negative pressure air draft pipeline is opened simultaneously, high pressure is rushed the white residue product blown siphon away in time, prevent from polluting other positions of wafer, can be effectively cost-saving while reaching technical requirement, improve cleaning efficiency.
Although describe in detail about example embodiment and advantage thereof, being to be understood that when not departing from the protection range of spirit of the present invention and claims restriction, various change, substitutions and modifications can being carried out to these embodiments.For other examples, those of ordinary skill in the art should easy understand maintenance scope in while, the order of processing step can change.
In addition, range of application of the present invention is not limited to the technique of the specific embodiment described in specification, mechanism, manufacture, material composition, means, method and step.From disclosure of the present invention, to easily understand as those of ordinary skill in the art, for the technique existed at present or be about to develop, mechanism, manufacture, material composition, means, method or step later, wherein their perform the identical function of the corresponding embodiment cardinal principle that describes with the present invention or obtain the identical result of cardinal principle, can apply according to the present invention to them.Therefore, claims of the present invention are intended to these technique, mechanism, manufacture, material composition, means, method or step to be included in its protection range.
Claims (11)
1. a wafer local cleaning device, for cleaning wafer region at quarter, this device comprises wafer alignment device, wafer chuck, wafer elevating control device, be positioned at high-purity gas high pressure downward above chuck rushes blowpipe road and blows with punching the negative-pressure ward pipeline that position relative level places.
2. cleaning device according to claim 1, is characterized in that, described wafer chuck is gripped by the collapsible mechanical pin of some.
3. cleaning device according to claim 1, is characterized in that, described wafer elevating control device comprises the supporting structure be positioned at below chuck, chuck side can be risen or declined to make its certain angle that tilts.
4. cleaning device according to claim 3, wherein said wafer elevating control device, is characterized in that, the scope at described chuck angle of inclination is 30 ° ~ 80 °.
5. cleaning device according to claim 1, is characterized in that, described high-purity gas high pressure rushes the high-purity gas that blowpipe road adopts and comprises high pure nitrogen or high-purity compressed air.
6. cleaning device according to claim 5, is characterized in that, described high-purity gas pressure limit is 80-150psi.
7. cleaning device according to claim 1, is characterized in that, described negative-pressure ward pipeline is bell mouth shape.
8. a wafer local clean method, for cleaning wafer region at quarter, the method comprises the following steps:
A., wafer to be cleaned is provided, is aimed at by wafer alignment device, confirm wafer carve number position;
B. wafer is placed on wafer chuck, and the position of its number of quarter is positioned at high-purityly rush below blowing pipeline nozzle;
C. by wafer elevating control device, the rise of chuck side or decline are made its certain angle that tilts;
D. the nozzle being rushed blowpipe road by high-purity gas high pressure carries out high pressure blow smelting operation to the region after laser incising number;
E. while steps d or before, open negative pressure air draft pipeline, high pressure rushed the residue blown and siphons away in time.
9. wafer local according to claim 8 clean method, it is characterized in that, in step c, the scope at described chuck angle of inclination is 30 ° ~ 80 °.
10. wafer local according to claim 8 clean method, it is characterized in that, in steps d, described high-purity gas comprises high pure nitrogen or high-purity compressed air.
11. wafer local according to claim 10 clean methods, it is characterized in that, in steps d, the gas pressure range be suitable for is 80-150psi.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410345393.XA CN105405741A (en) | 2014-07-18 | 2014-07-18 | Local cleaning device and method for wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410345393.XA CN105405741A (en) | 2014-07-18 | 2014-07-18 | Local cleaning device and method for wafer |
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| CN105405741A true CN105405741A (en) | 2016-03-16 |
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| CN201410345393.XA Pending CN105405741A (en) | 2014-07-18 | 2014-07-18 | Local cleaning device and method for wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108091549A (en) * | 2017-11-10 | 2018-05-29 | 盐城金合盛光电科技有限公司 | A kind of nitrogen cleaning equipment suitable for silicon chip |
| CN109633220A (en) * | 2019-01-29 | 2019-04-16 | 江阴佳泰电子科技有限公司 | A kind of pre- purging formula wafer probe platform |
| CN113877890A (en) * | 2021-09-26 | 2022-01-04 | 北京北方华创微电子装备有限公司 | Semiconductor cleaning apparatus and method of cleaning chuck |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4822639A (en) * | 1986-08-25 | 1989-04-18 | Fuji Photo Film Co., Ltd. | Spin coating method and device |
| JPH1124282A (en) * | 1997-06-27 | 1999-01-29 | Nippon Telegr & Teleph Corp <Ntt> | Device and method for developing resist |
| CN1207576A (en) * | 1997-07-31 | 1999-02-10 | 日本电气株式会社 | Resist developing process |
| TW493233B (en) * | 2001-06-22 | 2002-07-01 | Taiwan Semiconductor Mfg | Apparatus for removing residual material in alignment mark of wafer |
| KR20040081618A (en) * | 2003-03-14 | 2004-09-22 | 삼성전자주식회사 | Apparatus for labeling semiconductor wafers |
| US20050081824A1 (en) * | 2003-10-20 | 2005-04-21 | Taiwan Semiconductor Manufacturing Co. | Contaminant particle removal by optical tweezers |
| JP2006339463A (en) * | 2005-06-03 | 2006-12-14 | Matsushita Electric Ind Co Ltd | Development method and developer |
| CN1891359A (en) * | 2005-07-06 | 2007-01-10 | 上海华虹Nec电子有限公司 | Silicon wafter surface particle fixed-point cleaning system and method |
| CN101329281A (en) * | 2007-06-20 | 2008-12-24 | 佛山普立华科技有限公司 | System and method for testing image sensing wafer stain and |
| CN101716582A (en) * | 2008-12-30 | 2010-06-02 | 四川虹欧显示器件有限公司 | Method and device for washing industrial dust |
| CN101745851A (en) * | 2008-12-03 | 2010-06-23 | 株式会社迪思科 | Grinding device and grinding method |
| CN102024670A (en) * | 2009-09-11 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Wafer inspection method and device |
| CN102744984A (en) * | 2011-04-18 | 2012-10-24 | 颀中科技（苏州）有限公司 | Dust removing device for laser stamping of flexible circuit board |
| CN103341405A (en) * | 2013-07-24 | 2013-10-09 | 深圳市华星光电技术有限公司 | Cleaning method of glass substrate and device for implementing method |
-
2014
- 2014-07-18 CN CN201410345393.XA patent/CN105405741A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4822639A (en) * | 1986-08-25 | 1989-04-18 | Fuji Photo Film Co., Ltd. | Spin coating method and device |
| JPH1124282A (en) * | 1997-06-27 | 1999-01-29 | Nippon Telegr & Teleph Corp <Ntt> | Device and method for developing resist |
| CN1207576A (en) * | 1997-07-31 | 1999-02-10 | 日本电气株式会社 | Resist developing process |
| TW493233B (en) * | 2001-06-22 | 2002-07-01 | Taiwan Semiconductor Mfg | Apparatus for removing residual material in alignment mark of wafer |
| KR20040081618A (en) * | 2003-03-14 | 2004-09-22 | 삼성전자주식회사 | Apparatus for labeling semiconductor wafers |
| US20050081824A1 (en) * | 2003-10-20 | 2005-04-21 | Taiwan Semiconductor Manufacturing Co. | Contaminant particle removal by optical tweezers |
| JP2006339463A (en) * | 2005-06-03 | 2006-12-14 | Matsushita Electric Ind Co Ltd | Development method and developer |
| CN1891359A (en) * | 2005-07-06 | 2007-01-10 | 上海华虹Nec电子有限公司 | Silicon wafter surface particle fixed-point cleaning system and method |
| CN101329281A (en) * | 2007-06-20 | 2008-12-24 | 佛山普立华科技有限公司 | System and method for testing image sensing wafer stain and |
| CN101745851A (en) * | 2008-12-03 | 2010-06-23 | 株式会社迪思科 | Grinding device and grinding method |
| CN101716582A (en) * | 2008-12-30 | 2010-06-02 | 四川虹欧显示器件有限公司 | Method and device for washing industrial dust |
| CN102024670A (en) * | 2009-09-11 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Wafer inspection method and device |
| CN102744984A (en) * | 2011-04-18 | 2012-10-24 | 颀中科技（苏州）有限公司 | Dust removing device for laser stamping of flexible circuit board |
| CN103341405A (en) * | 2013-07-24 | 2013-10-09 | 深圳市华星光电技术有限公司 | Cleaning method of glass substrate and device for implementing method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108091549A (en) * | 2017-11-10 | 2018-05-29 | 盐城金合盛光电科技有限公司 | A kind of nitrogen cleaning equipment suitable for silicon chip |
| CN109633220A (en) * | 2019-01-29 | 2019-04-16 | 江阴佳泰电子科技有限公司 | A kind of pre- purging formula wafer probe platform |
| CN113877890A (en) * | 2021-09-26 | 2022-01-04 | 北京北方华创微电子装备有限公司 | Semiconductor cleaning apparatus and method of cleaning chuck |
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Application publication date: 20160316 |