CN105390550A - 复合多晶硅栅mos器件及其制造方法 - Google Patents
复合多晶硅栅mos器件及其制造方法 Download PDFInfo
- Publication number
- CN105390550A CN105390550A CN201510891758.3A CN201510891758A CN105390550A CN 105390550 A CN105390550 A CN 105390550A CN 201510891758 A CN201510891758 A CN 201510891758A CN 105390550 A CN105390550 A CN 105390550A
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- CN
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- Prior art keywords
- polysilicon
- dielectric layer
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- mos device
- gate
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- Granted
Links
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 170
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 168
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000002131 composite material Substances 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 43
- 230000003647 oxidation Effects 0.000 claims abstract description 22
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 12
- 238000002955 isolation Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 77
- 230000009977 dual effect Effects 0.000 claims description 65
- 238000005468 ion implantation Methods 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 238000002347 injection Methods 0.000 claims description 21
- 239000007924 injection Substances 0.000 claims description 21
- 150000002500 ions Chemical class 0.000 claims description 20
- 238000005516 engineering process Methods 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 9
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 26
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000005764 inhibitory process Effects 0.000 abstract description 3
- 230000008859 change Effects 0.000 description 11
- 230000006870 function Effects 0.000 description 10
- 230000005684 electric field Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- -1 boron ion Chemical class 0.000 description 5
- 125000001475 halogen functional group Chemical group 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 150000003376 silicon Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (15)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510891758.3A CN105390550B (zh) | 2015-12-04 | 2015-12-04 | 复合多晶硅栅mos器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510891758.3A CN105390550B (zh) | 2015-12-04 | 2015-12-04 | 复合多晶硅栅mos器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105390550A true CN105390550A (zh) | 2016-03-09 |
CN105390550B CN105390550B (zh) | 2018-02-06 |
Family
ID=55422627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510891758.3A Active CN105390550B (zh) | 2015-12-04 | 2015-12-04 | 复合多晶硅栅mos器件及其制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN105390550B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156371A (en) * | 1979-05-24 | 1980-12-05 | Toshiba Corp | Non-volatile semiconductor memory device |
EP0487022A2 (en) * | 1990-11-23 | 1992-05-27 | Texas Instruments Incorporated | A method of simultaneously fabricating an insulated gate-field-effect transistor and a bipolar transistor |
EP0856892A3 (en) * | 1997-01-30 | 1999-07-14 | Oki Electric Industry Co., Ltd. | MOSFET and manufacturing method thereof |
CN102420192A (zh) * | 2011-06-17 | 2012-04-18 | 上海华力微电子有限公司 | 一种双晶体管零电容动态ram的制备方法 |
US20120205751A1 (en) * | 2011-02-14 | 2012-08-16 | Kabushiki Kaisha Toshiba | Semiconductor device |
-
2015
- 2015-12-04 CN CN201510891758.3A patent/CN105390550B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156371A (en) * | 1979-05-24 | 1980-12-05 | Toshiba Corp | Non-volatile semiconductor memory device |
EP0487022A2 (en) * | 1990-11-23 | 1992-05-27 | Texas Instruments Incorporated | A method of simultaneously fabricating an insulated gate-field-effect transistor and a bipolar transistor |
EP0856892A3 (en) * | 1997-01-30 | 1999-07-14 | Oki Electric Industry Co., Ltd. | MOSFET and manufacturing method thereof |
US20120205751A1 (en) * | 2011-02-14 | 2012-08-16 | Kabushiki Kaisha Toshiba | Semiconductor device |
CN102420192A (zh) * | 2011-06-17 | 2012-04-18 | 上海华力微电子有限公司 | 一种双晶体管零电容动态ram的制备方法 |
Also Published As
Publication number | Publication date |
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CN105390550B (zh) | 2018-02-06 |
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Effective date of registration: 20201104 Address after: 318015 no.2-3167, zone a, Nonggang City, no.2388, Donghuan Avenue, Hongjia street, Jiaojiang District, Taizhou City, Zhejiang Province Patentee after: Taizhou Jiji Intellectual Property Operation Co.,Ltd. Address before: 201616 Shanghai city Songjiang District Sixian Road No. 3666 Patentee before: Phicomm (Shanghai) Co.,Ltd. |
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Effective date of registration: 20231228 Address after: 518000, Building B3, Block B, Phase I, Baoneng Science and Technology Park (South Zone), Qinghu Industrial Zone, Gangtou Community, Bantian Street, Longgang District, Shenzhen City, Guangdong Province, 901-18A Patentee after: Shenzhen Paisidi Power Semiconductor Co.,Ltd. Address before: 318015 no.2-3167, area a, nonggangcheng, 2388 Donghuan Avenue, Hongjia street, Jiaojiang District, Taizhou City, Zhejiang Province Patentee before: Taizhou Jiji Intellectual Property Operation Co.,Ltd. |
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TR01 | Transfer of patent right |