CN105384172B - A kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method - Google Patents
A kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method Download PDFInfo
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- CN105384172B CN105384172B CN201511018855.8A CN201511018855A CN105384172B CN 105384172 B CN105384172 B CN 105384172B CN 201511018855 A CN201511018855 A CN 201511018855A CN 105384172 B CN105384172 B CN 105384172B
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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Abstract
A kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method, are related to a kind of graphite chuck and its application method.The invention solves the problems that existing improved Siemens polycrystalline silicon reducing furnace graphite chuck contacts uneven with silicon core, so that cause contact point local temperature too high, the problem of occurring to lean on wall or the phenomenon of falling rod.Improvement Siemens's polycrystalline silicon reducing furnace of the present invention graphite chuck includes round platform part 4, annular groove 5, round shape part 6 and flange 7, and round platform part 4 and the center of column part 6 are intercommunicating pore；Application method：First, the reverse frustoconic with the identical taper in inverted round stage hole 1 is processed into silicon core lower end；2nd, reverse frustoconic one end of the silicon core after processing is inserted into the inverted round stage hole 1 of graphite chuck.Graphite chuck and its application method of the present invention can improve the operation stability of improved Siemens polycrystalline silicon reducing furnace, can avoid occurring to lean on wall or the phenomenon of falling rod, simple in construction, easy to process, required graphite material is few, and cost is low.
Description
Technical field
One kind is used for improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method.
Background technology
Polysilicon is the necessary raw material needed for the production of solar photovoltaic cell panel and thyristor, most generally and most
The method of widely known production polysilicon is allowed to be exactly improved Siemens, its principle is exactly with the high-purity trichlorine hydrogen of high-purity hydrogen reduction
Silicon, but this reaction needs the progress on 1100 DEG C or so of HIGH-PURITY SILICON core.Silicon core is in Siemens Method and the life of silane thermal decomposition process polysilicon
As the heat carrier that reduction reaction deposition (CVD) polysilicon is carried out in reduction furnace in production, after reduction reaction terminates, siliceous deposits exists
Around silicon core, silicon core is used together with silicon by broken together as polycrystalline silicon raw material.Siemens process polycrystalline silicon production technology advantage
It is cheap with significant energy conservation and consumption reduction effects, operating cost, and the polysilicon that this method is produced has higher quality,
The production technology is by using comprehensive utilization technique, and whole production process does not produce pollution to environment.Improved Siemens are produced
The nucleus equipment of technique is polycrystalline silicon reducing furnace, the operation stability of the equipment be influence production of polysilicon quality it is crucial because
Element.
Improvement Siemens polycrystalline silicon reducing furnace silicon special core has two kinds, and one kind is round silicon core, another side's of being silicon core；Circle silicon
Core diameter control reaches by pulling rate and temperature adjustment, automatically controls more difficult, and operative employee's labor intensity is big, technical requirements
Height, silicon core dimensional tolerance is also larger, causes current density in use uneven, easily produces bright spot, meeting corrode silicon core and produces
Stove, because plucked is not easy that dress is vertical in card valve for a point contact during dress silicon core, the thick rear load-bearing bias of polysilicon length is produced
Stove, justifies silicon core bridging crossbeam and places in fluting, contact surface is small, easily falls generation when high-voltage breakdown and big air-flow and falls
It is cumbersome thing to occur stove in stove, production of polysilicon, to restart and tear stove, blow-on startup program open, is lost larger；Square silicon core
The big intensity of sectional area is high, large carrying capacity, while square silicon core dimensional standard, card valve clamping perpendicularity is easily guaranteed that, bridging circle
Bore feather joint very reliable, be greatly reduced the reduction furnace rate of falling stove.
Graphite chuck is that polycrystalline silicon reducing furnace is used to clamp silicon core and the assembly tool of connection electrode, because its is simple in construction
It is easy to production, therefore is very practical in improved Siemens production of polysilicon.But most of graphite chucks all have one
A little design defect, so as to occur to lean on wall or rod.Silicon core will result directly in production by wall and terminate, and damage is brought to production of polysilicon
Lose.Harm of the phenomenon of falling rod to polysilicon quality or even body of heater in production of polysilicon is maximum, when reduction furnace is run
Occur rod, a stove silicon core total loss may be made, more seriously may result in reduction furnace furnace wall and chassis of reducing furnace
Or even the damage of instrumentation, this not only brings many inconvenience to subsequent treatment work, and production cost can be significantly increased.
Therefore, the performance of graphite chuck directly affects the production of polysilicon cost of improved Siemens.
What existing graphite chuck was the more commonly used at present is cylindrical graphite chuck, exists and contacts inequality with the silicon core clamped
Even design defect, it is too high to be easily caused silicon core contact point local temperature in process of production, makes silicon core local softening or melts
Change, in turn result in by wall or the generation of falling rod.
The content of the invention
The present invention contacts uneven to solve existing improved Siemens polycrystalline silicon reducing furnace graphite chuck with silicon core,
So as to cause contact point local temperature too high, occur to lean on wall or the phenomenon of falling rod.
The technical scheme is that：
A kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck, including round platform part, annular groove, column part
And flange, round platform part is above annular groove, and column part is below annular groove, and flange is cylindrical column part bottom
Zhou Shang；Round platform part and column part center are intercommunicating pore, are from top to bottom followed successively by inverted round stage hole, the first cylindrical hole and second
Cylindrical hole；The center of inverted round stage hole, the first cylindrical hole and the second cylindrical hole is on the same axis；Bottom on described inverted round stage hole
Face diameter is less than round platform part upper bottom surface diameter；First cylinder bore diameter is identical with inverted round stage hole bottom surface diameter, the second cylinder
Bore dia is more than the first cylinder bore diameter；
The side of the second cylindrical hole in described improved Siemens polycrystalline silicon reducing furnace graphite chuck to be smooth or
With internal thread；The effect of described flange and the second cylindrical hole is more preferable fixed graphite chuck；The annular groove is in height
Cushioning effect is played under temperature, it is to avoid chuck is split due to high temperature；
A kind of application method of improved Siemens polycrystalline silicon reducing furnace graphite chuck of the present invention is according to as follows
Step is carried out：
First, silicon core is handled
Silicon core lower end is processed into the inverted round stage of taper identical with inverted round stage hole；The inverted round stage of silicon core after described processing
Upper bottom surface diameter be more than inverted round stage hole upper bottom surface diameter；
2nd, assemble
Inverted round stage one end of silicon core after being processed in step one is inserted into the inverted round stage hole of graphite chuck, and will assembling
Graphite chuck afterwards is fixed on polycrystalline silicon reduction furnace base plate and inserts electrode.
Improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method of the present invention possess following beneficial effect：
1st, improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method of the present invention, which can be improved, changes
The operation stability of good Siemens process polycrystalline silicon reduction furnace, the inverted round stage hole of graphite chuck is uniformly contacted with silicon core taper surface, from
And avoid electric current supply during the too high initiation of contact point local temperature lean on wall or the phenomenon of falling rod；
2nd, graphite chuck design structure of the invention is simple, easy to process, while without plus structural pair during use
Silicon core is fixed, but can uniformly be contacted with graphite chuck by silicon core self gravitation, and simple to operate, easy to use；
3rd, graphite material needed for graphite chuck of the invention is few, and cost is low.
Brief description of the drawings
Fig. 1 is graphite chuck profile of the present invention；
Fig. 2 is graphite chuck top view of the present invention；
Fig. 3 is the profile for the circle silicon core that embodiment 1 is processed, wherein 8 inverted round stage to process；
Fig. 4 is the top view for the circle silicon core that embodiment 1 is processed；
Fig. 5 is the graphite chuck of embodiment 1 and circle silicon core assembling schematic diagram；
Fig. 6 is the profile for the square silicon core that embodiment 2 is processed, wherein 9 inverted round stage to process；
Fig. 7 is the top view for the square silicon core that embodiment 2 is processed；
Embodiment
Technical solution of the present invention is not limited to act embodiment set forth below, in addition between each embodiment
Any reasonable combination.
Embodiment one：A kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck of present embodiment, including
Round platform part 4, annular groove 5, column part 6 and flange 7, round platform part 4 is in the top of annular groove 5, and column part 6 is in annular
The lower section of groove 5, flange 7 is on the excircle of the bottom of column part 6；Round platform part 4 and the center of column part 6 are intercommunicating pore, by
Inverted round stage hole 1, the first cylindrical hole 2 and the second cylindrical hole 3 are up to followed successively by down；Inverted round stage hole 1, the first cylindrical hole 2 and second
The center of cylindrical hole 3 is on the same axis；The described upper bottom surface diameter of inverted round stage hole 1 is less than the upper bottom surface diameter of round platform part 4；The
The diameter of one cylindrical hole 2 is identical with the bottom surface diameter of inverted round stage hole 1, and the diameter of the second cylindrical hole 3 is more than the diameter of the first cylindrical hole 2；
Present embodiment possesses following beneficial effect
1st, improved Siemens polycrystalline silicon reducing furnace graphite chuck can improve improved Siemens in present embodiment
The operation stability of polycrystalline silicon reducing furnace, the inverted round stage hole of graphite chuck is uniformly contacted with silicon core taper surface, so as to avoid electric current
During supply due to silicon core and graphite chuck localized contact point it is uneven caused by local temperature it is too high and trigger by wall or
The phenomenon of falling rod；
2nd, graphite chuck design structure is simple, easy to process described in present embodiment, while without additional during use
Silicon core is fixed structure, but silicon core can uniformly be contacted by self gravitation with graphite chuck, and simple to operate, is used
It is convenient；
3rd, graphite material needed for graphite chuck described in present embodiment is few, and cost is low.
Embodiment two：Present embodiment from unlike embodiment one：The second described cylindrical hole 3
Side is smooth.Other steps are identical with embodiment one with parameter.
Embodiment three：Present embodiment from unlike embodiment one or two：The second described cylinder
The side in hole 3 carries internal thread.Other steps are identical with parameter with embodiment one or two.
Embodiment four：The application method of present embodiment improved Siemens polycrystalline silicon reducing furnace graphite chuck
Carry out in accordance with the following steps：
First, silicon core is handled
The inverted round stage with the identical taper in inverted round stage hole 1 is processed into silicon core lower end；Cylindrical silicon core after described processing
Inverted round stage upper bottom surface diameter be more than inverted round stage hole 1 upper bottom surface diameter；
2nd, assemble
Inverted round stage one end of silicon core after being processed in step one is inserted into the inverted round stage hole 1 of graphite chuck, and by group
Graphite chuck after dress is fixed on polycrystalline silicon reduction furnace base plate and inserts electrode.
Present embodiment possesses following beneficial effect
1st, improved Siemens polycrystalline silicon reducing furnace graphite chuck described in present embodiment and its application method can be carried
The operation stability of high-improved Siemens process polycrystalline silicon reduction furnace, inverted round stage hole and the silicon core taper surface of graphite chuck uniformly connect
Touch, thus avoid electric current supply during the too high initiation of contact point local temperature lean on wall or the phenomenon of falling rod；
2nd, the graphite chuck design structure of present embodiment is simple, easy to process, while without additional knot during use
Silicon core is fixed structure, but can uniformly be contacted with graphite chuck by silicon core self gravitation, and simple to operate, user
Just；
3rd, graphite material needed for the graphite chuck of present embodiment is few, and cost is low.
Embodiment five：Unlike one of present embodiment and embodiment one to four：Described in step one
Silicon core be circle silicon core.Other steps are identical with one of embodiment one to four with parameter.
Embodiment six：Unlike one of present embodiment and embodiment one to five：Described in step one
Silicon core be square silicon core.Other steps are identical with one of embodiment one to five with parameter.
Effect of the present invention is verified by following examples, and embodiment should not be construed as limited to what is illustrated here
Specific embodiment.It is conversely in order to explain the principle and its practical application of the present invention, so that this area there is provided these embodiments
Others skilled in the art it will be appreciated that various embodiments of the present invention and being suitable for the various modifications of specific intended application.
Beneficial effects of the present invention are verified by following examples：
Embodiment 1：
Improved Siemens polycrystalline silicon reducing furnace graphite chuck described in the present embodiment, including round platform part 4, annular it is recessed
Groove 5, column part 6 and flange 7, round platform part 4 is in the top of annular groove 5, and column part 6 is below annular groove 5, flange 7
On the excircle of the bottom of column part 6；Round platform part 4 and the center of column part 6 are intercommunicating pore, are from top to bottom followed successively by rounding
Platform hole 1, the first cylindrical hole 2 and the second cylindrical hole 3；The center of inverted round stage hole 1, the first cylindrical hole 2 and the second cylindrical hole 3 is same
On one axis；The described upper bottom surface diameter of inverted round stage hole 1 is less than the upper bottom surface diameter of round platform part 4；The diameter of first cylindrical hole 2 is with falling
The bottom surface diameter of round platform hole 1 is identical, and the diameter of the second cylindrical hole 3 is more than the diameter of the first cylindrical hole 2；
The side of the second described cylindrical hole 3 carries internal thread；The effect of the described cylindrical hole 3 of flange 7 and second is more
Good fixation graphite chuck；
Described improved Siemens polycrystalline silicon reducing furnace is carried out in accordance with the following steps with the application method of graphite chuck：
First, silicon core is handled
The inverted round stage with the identical taper in inverted round stage hole 1 is processed into silicon core lower end；Cylindrical silicon core after described processing
Inverted round stage upper bottom surface diameter be more than inverted round stage hole 1 upper bottom surface diameter；Described silicon core is circle silicon core；
2nd, assemble
Inverted round stage one end of silicon core after being processed in step one is inserted into the inverted round stage hole 1 of graphite chuck, and by group
Graphite chuck after dress is fixed on polycrystalline silicon reduction furnace base plate and inserts electrode；
Fig. 3 is the profile for the circle silicon core that the present embodiment 1 is processed, wherein 8 inverted round stage to process；Fig. 4 is the present embodiment 1
The top view of the circle silicon core of processing；Fig. 5 is the present embodiment graphite chuck and circle silicon core assembling schematic diagram, and upper end is the silicon after processing
Core, lower end is graphite chuck；
The present embodiment possesses following beneficial effect：
1st, improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method can be improved and changed in the present embodiment
The operation stability of good Siemens process polycrystalline silicon reduction furnace, the inverted round stage hole of graphite chuck is uniformly contacted with silicon core taper surface, from
And avoid electric current from drawing during supplying because the uneven caused local temperature of silicon core and graphite chuck localized contact point is too high
That sends out leans on wall or the phenomenon of falling rod；
2nd, the graphite chuck design structure of the present embodiment is simple, easy to process, while without plus structural during use
Silicon core is fixed, but can uniformly be contacted with graphite chuck by silicon core self gravitation, and simple to operate, user
Just；
3rd, graphite material needed for the graphite chuck of the present embodiment is few, and cost is low.
Embodiment 2：
Improved Siemens polycrystalline silicon reducing furnace graphite chuck described in the present embodiment, including round platform part 4, annular it is recessed
Groove 5, column part 6 and flange 7, round platform part 4 is in the top of annular groove 5, and column part 6 is below annular groove 5, flange 7
On the excircle of the bottom of column part 6；Round platform part 4 and the center of column part 6 are intercommunicating pore, are from top to bottom followed successively by rounding
Platform hole 1, the first cylindrical hole 2 and the second cylindrical hole 3；The center of inverted round stage hole 1, the first cylindrical hole 2 and the second cylindrical hole 3 is same
On one axis；The described upper bottom surface diameter of inverted round stage hole 1 is less than the upper bottom surface diameter of round platform part 4；The diameter of first cylindrical hole 2 is with falling
The bottom surface diameter of round platform hole 1 is identical, and the diameter of the second cylindrical hole 3 is more than the diameter of the first cylindrical hole 2；
The side of the second described cylindrical hole 3 carries internal thread；The effect of the described cylindrical hole 3 of flange 7 and second is more
Good fixation graphite chuck；
Described polycrystalline silicon reducing furnace is carried out in accordance with the following steps with the application method of graphite chuck：
First, silicon core is handled
The inverted round stage with the identical taper in inverted round stage hole 1 is processed into silicon core lower end；Circle silicon core after described processing falls
The upper bottom surface diameter of round platform is more than the upper bottom surface diameter in inverted round stage hole 1；Described silicon core is square silicon core；
2nd, assemble
Inverted round stage one end of silicon core after being processed in step one is inserted into the inverted round stage hole 1 of graphite chuck, and by group
Graphite chuck after dress is fixed on polycrystalline silicon reduction furnace base plate and inserts electrode；
Fig. 6 is the profile of the square silicon core of the present embodiment processing, wherein 9 inverted round stage to process；Fig. 7 is that embodiment 2 adds
The top view of the square silicon core of work；
The present embodiment possesses following beneficial effect：
1st, improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method can be improved and changed in the present embodiment
The operation stability of good Siemens process polycrystalline silicon reduction furnace, the inverted round stage hole of graphite chuck is uniformly contacted with silicon core taper surface, from
And avoid electric current from drawing during supplying because the uneven caused local temperature of silicon core and graphite chuck localized contact point is too high
That sends out leans on wall or the phenomenon of falling rod；
2nd, the graphite chuck design structure of the present embodiment is simple, easy to process, while without plus structural during use
Silicon core is fixed, but can uniformly be contacted with graphite chuck by silicon core self gravitation, and simple to operate, user
Just；
3rd, graphite material needed for the graphite chuck of the present embodiment is few, and cost is low.
Claims (4)
1. a kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck, it is characterised in that the graphite chuck includes round platform part
(4), annular groove (5), column part (6) and flange (7), round platform part (4) are in annular groove (5) top, column part (6)
Below annular groove (5), flange (7) is on the excircle of column part (6) bottom；Round platform part (4) and column part (6)
Center is intercommunicating pore, is from top to bottom followed successively by inverted round stage hole (1), the first cylindrical hole (2) and the second cylindrical hole (3)；Inverted round stage hole
(1), the center of the first cylindrical hole (2) and the second cylindrical hole (3) is on the same axis；Described inverted round stage hole (1) upper bottom surface is straight
Footpath is less than round platform part (4) upper bottom surface diameter；First cylindrical hole (2) diameter is identical with inverted round stage hole (1) bottom surface diameter, and second
Cylindrical hole (3) diameter is more than the first cylindrical hole (2) diameter.
2. a kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck according to claim 1, it is characterised in that institute
The side for the second cylindrical hole (3) stated is smooth or with internal thread.
3. a kind of application method of improved Siemens polycrystalline silicon reducing furnace graphite chuck as claimed in claim 1, its feature
It is that this method is carried out in accordance with the following steps：
First, silicon core is handled
Silicon core lower end is processed into the inverted round stage of taper identical with inverted round stage hole (1)；The inverted round stage of silicon core after described processing
Upper bottom surface diameter be more than inverted round stage hole (1) upper bottom surface diameter；
2nd, assemble
Inverted round stage one end of silicon core after being processed in step one is inserted into the inverted round stage hole (1) of graphite chuck, and will assembling
Graphite chuck afterwards is fixed on polycrystalline silicon reduction furnace base plate and inserts electrode.
4. a kind of application method of improved Siemens polycrystalline silicon reducing furnace graphite chuck according to claim 3, its
It is circle silicon core or square silicon core to be characterised by the silicon core described in step one.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511018855.8A CN105384172B (en) | 2015-12-29 | 2015-12-29 | A kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511018855.8A CN105384172B (en) | 2015-12-29 | 2015-12-29 | A kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method |
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| Publication Number | Publication Date |
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| CN105384172A CN105384172A (en) | 2016-03-09 |
| CN105384172B true CN105384172B (en) | 2017-09-22 |
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| CN101691221A (en) * | 2009-10-12 | 2010-04-07 | 倪宝达 | Self-locking graphite violet gold chuck |
| CN201762112U (en) * | 2010-08-30 | 2011-03-16 | 国电宁夏太阳能有限公司 | Silicon core mounting device of reducing furnace |
| CN202063727U (en) * | 2011-03-23 | 2011-12-07 | 四川瑞能硅材料有限公司 | Chuck for polycrystalline silicon reduction furnace |
| CN202246096U (en) * | 2011-09-26 | 2012-05-30 | 江西赛维Ldk光伏硅科技有限公司 | Graphite chuck capable of being used repeatedly |
| CN203065630U (en) * | 2013-02-20 | 2013-07-17 | 江西豪安能源科技有限公司 | Graphite chuck for straightly pulling single crystal |
| CN203440093U (en) * | 2013-06-25 | 2014-02-19 | 山西潞安矿业(集团)有限责任公司 | Elastic graphite clamp |
| CN203593628U (en) * | 2013-12-16 | 2014-05-14 | 中国矿业大学 | Graphite assembly capable of being separated from base and rod and used for polycrystalline silicon reduction furnace |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101302231B1 (en) * | 2012-02-22 | 2013-09-02 | 최진석 | Two Pieces Graphite Chuck |
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2015
- 2015-12-29 CN CN201511018855.8A patent/CN105384172B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5284640A (en) * | 1989-12-26 | 1994-02-08 | Advanced Silicon Materials, Inc. | Graphite chuck having a hydrogen impervious outer coating layer |
| CN201305655Y (en) * | 2008-11-24 | 2009-09-09 | 四川永祥多晶硅有限公司 | Connecting devices of polycrystalline silicon hydrogen reduction furnace silicon core rods and graphite clamping heads |
| CN101691221A (en) * | 2009-10-12 | 2010-04-07 | 倪宝达 | Self-locking graphite violet gold chuck |
| CN201762112U (en) * | 2010-08-30 | 2011-03-16 | 国电宁夏太阳能有限公司 | Silicon core mounting device of reducing furnace |
| CN202063727U (en) * | 2011-03-23 | 2011-12-07 | 四川瑞能硅材料有限公司 | Chuck for polycrystalline silicon reduction furnace |
| CN202246096U (en) * | 2011-09-26 | 2012-05-30 | 江西赛维Ldk光伏硅科技有限公司 | Graphite chuck capable of being used repeatedly |
| CN203065630U (en) * | 2013-02-20 | 2013-07-17 | 江西豪安能源科技有限公司 | Graphite chuck for straightly pulling single crystal |
| CN203440093U (en) * | 2013-06-25 | 2014-02-19 | 山西潞安矿业(集团)有限责任公司 | Elastic graphite clamp |
| CN203593628U (en) * | 2013-12-16 | 2014-05-14 | 中国矿业大学 | Graphite assembly capable of being separated from base and rod and used for polycrystalline silicon reduction furnace |
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| CN105384172A (en) | 2016-03-09 |
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