CN105384172A - Graphite chuck for improving Siemens Method polycrystalline silicon reduction furnace and use method of graphite chuck - Google Patents
Graphite chuck for improving Siemens Method polycrystalline silicon reduction furnace and use method of graphite chuck Download PDFInfo
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- CN105384172A CN105384172A CN201511018855.8A CN201511018855A CN105384172A CN 105384172 A CN105384172 A CN 105384172A CN 201511018855 A CN201511018855 A CN 201511018855A CN 105384172 A CN105384172 A CN 105384172A
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- graphite chuck
- silicon core
- inverted round
- polycrystalline silicon
- hole
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Abstract
A graphite chuck for improving a Siemens Method polycrystalline silicon reduction furnace and a use method of the graphite chuck relate to a graphite chuck and a use method thereof. The invention aims to solve the problem that since the contact between the existing improved graphite chuck for improving the Siemens Method polycrystalline silicon reduction furnace and a silicon core is non-uniform, local temperature of a contact point is overhigh, and a wall leaning or rod falling phenomenon occurs. The graphite chuck for improving the Siemens Method polycrystalline silicon reduction furnace comprises a round table part 4, an annular groove 5, a cylindrical part 6 and a flange 7; centers of the round table part 4 and the cylindrical part 6 are communicated holes; the use method comprises the following steps: 1, machining the lower end of the silicon core into an inverted round table shape tapered same as an inverted round table hole 1; 2, inserting one end of the machined inverted round table shape of the silicon core into the inverted round table hole 1 of the graphite chuck. The graphite chuck and the use method thereof can improve the operation stability of the Siemens Method polycrystalline silicon reduction furnace, can avoid the wall leaning or rod falling phenomenon, is simple in structure, easy to machine and low in cost and needs less graphite material.
Description
Technical field
A kind of for improved Siemens polycrystalline silicon reducing furnace graphite chuck and using method thereof.
Background technology
Polysilicon is the necessary starting material needed for the production of solar photovoltaic cell panel and thyristor, the most generally and the method for the production polysilicon allowing people know most is exactly improved Siemens, its principle reduces high-purity trichlorosilane by High Purity Hydrogen exactly, but this reaction needed is carried out on the HIGH-PURITY SILICON core of about 1100 DEG C.Silicon core be in Siemens Method and silane thermal decomposition process production of polysilicon as reduction furnace in carry out the thermal barrier of reduction reaction deposition (CVD) polysilicon, after reduction reaction terminates, siliceous deposits is around silicon core, and silicon core is used as polycrystalline silicon raw material by fragmentation together with silicon.Siemens process polycrystalline silicon production technique advantage is to have significant energy conservation and consumption reduction effects, running cost is cheap, and the polysilicon that the method is produced has higher quality, this production technique is by adopting comprehensive utilization technique, and whole production process does not produce pollution to environment.The nucleus equipment of improved Siemens production technique is polycrystalline silicon reducing furnace, and the operation stability of this equipment is the key factor affecting production of polysilicon quality.
Improvement siemens polycrystalline silicon reducing furnace silicon special core has two kinds, and one is circle silicon core, the another kind side of being silicon core, circle silicon core diameter controls to regulate by pulling rate and temperature to reach, automatic control is more difficult, operative employee's labour intensity is large, technical requirements is high, silicon core tolerance of dimension is also larger, cause current density in use uneven, easy generation bright spot, understand corrode silicon core and produce down stove, during dress silicon core because of plucked in card lobe for point cantact is not easy dress vertically, the long thick rear load-bearing bias of polysilicon produces stove, circle silicon core bridging crossbeam places in fluting, contact surface is little, easily fall when high-voltage breakdown and air flow and produce stove, in production of polysilicon, stove occurring is very troublesome thing, restart and tear stove open, blow-on start-up routine, lose larger, side's silicon core sectional area hard intensity is high, and supporting capacity is large, while side's silicon core dimensional standard, and card lobe clamping verticality easily ensures, puts up a bridge very reliable with circular cone feather joint, the reduction furnace rate of falling stove is declined greatly.
Graphite chuck be polycrystalline silicon reducing furnace for clamping the assembly tool of silicon core and connection electrode, due to its structure be simply convenient to produce, be therefore very practical in improved Siemens production of polysilicon.But most of graphite chuck all exists some design defect, thus occur by wall or the rod that falls.Silicon core stops directly causing producing by wall, brings loss to production of polysilicon.The harm of excellent phenomenon in production of polysilicon to polysilicon quality and even body of heater is maximum, run once reduction furnace and rod occurs, a stove silicon core complete loss may be made, more serious words may cause the damage of reduction furnace furnace wall and chassis of reducing furnace and even instrumentation, this not only brings a lot of inconvenience to subsequent disposal work, and production cost can be made significantly to increase.Therefore, the performance of graphite chuck directly affects the production of polysilicon cost of improved Siemens.
What current existing graphite chuck was relatively more conventional is cylindrical graphite chuck, exist and contact uneven design defect with the silicon core of clamping, easily cause silicon core point of contact local temperature too high in process of production, make silicon core local softening or thawing, and then cause by wall or rod generation of falling.
Summary of the invention
The present invention contacts uneven in order to solve existing improved Siemens polycrystalline silicon reducing furnace graphite chuck with silicon core, thus causes point of contact local temperature too high, occurs by wall or excellent phenomenon.
Technical scheme of the present invention is:
A kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck, comprise round platform part, annular recesses, column part and flange, round platform part is above annular recesses, and column part is below annular recesses, and flange is on the excircle of column part bottom; Round platform part and column part center are communicating aperture, are followed successively by inverted round stage hole, the first cylindrical hole and the second cylindrical hole from top to bottom; Inverted round stage hole, the center of the first cylindrical hole and the second cylindrical hole is on the same axis; Described inverted round stage hole upper bottom surface diameter is less than round platform part upper bottom surface diameter; First cylinder bore diameter is identical with inverted round stage hole bottom surface diameter, and the second cylinder bore diameter is greater than the first cylinder bore diameter;
The side of the second cylindrical hole in described improved Siemens polycrystalline silicon reducing furnace graphite chuck is smooth or with internal thread; The effect of described flange and the second cylindrical hole better fixes graphite chuck; Described annular recesses at high temperature plays shock absorption, avoids chuck to split due to high temperature;
The using method of a kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck of the present invention is carried out in accordance with the following steps:
One, silicon core is processed
Silicon core lower end is processed into the inverted round stage of tapering identical with inverted round stage hole; The upper bottom surface diameter of the inverted round stage of the silicon core after described processing is greater than the upper bottom surface diameter in inverted round stage hole;
Two, assemble
Inverted round stage one end of silicon core after processing in step one is inserted in the inverted round stage hole of graphite chuck, and the graphite chuck after assembling is fixed on polycrystalline silicon reduction furnace base plate and electrode insertion.
Improved Siemens polycrystalline silicon reducing furnace graphite chuck of the present invention and using method thereof possess following beneficial effect:
1, improved Siemens polycrystalline silicon reducing furnace graphite chuck of the present invention and using method thereof can improve the operation stability of improved Siemens polycrystalline silicon reducing furnace, the inverted round stage hole of graphite chuck and silicon core conical surface uniform contact, thus avoid the too high initiation of point of contact local temperature in electric current supply process by wall or excellent phenomenon;
2, graphite chuck project organization of the present invention simple, be easy to processing, without the need to plus structural, silicon core is fixed in use procedure simultaneously, but rely on silicon core self gravitation can with graphite chuck uniform contact, and simple to operate, easy to use;
3, needed for graphite chuck of the present invention, graphite material is few, and cost is low.
Accompanying drawing explanation
Fig. 1 is graphite chuck sectional view of the present invention;
Fig. 2 is graphite chuck vertical view of the present invention;
Fig. 3 is the sectional view of the round silicon core that embodiment 1 is processed, and wherein 8 is the inverted round stage processed;
Fig. 4 is the vertical view of the round silicon core that embodiment 1 is processed;
Fig. 5 is that embodiment 1 graphite chuck assembles schematic diagram with circle silicon core;
Fig. 6 is the sectional view of the square silicon core that embodiment 2 is processed, and wherein 9 is the inverted round stage processed;
Fig. 7 is the vertical view of the square silicon core that embodiment 2 is processed;
Embodiment
Technical solution of the present invention is not limited to following cited embodiment, also comprises any reasonable combination between each embodiment.
Embodiment one: a kind of improved Siemens polycrystalline silicon reducing furnace of present embodiment graphite chuck, comprise round platform part 4, annular recesses 5, column part 6 and flange 7, round platform part 4 is above annular recesses 5, column part 6 is below annular recesses 5, and flange 7 is on the excircle of column part 6 bottom; Round platform part 4 and column part 6 center are communicating aperture, are followed successively by inverted round stage hole 1, first cylindrical hole 2 and the second cylindrical hole 3 from top to bottom; The center of inverted round stage hole 1, first cylindrical hole 2 and the second cylindrical hole 3 on the same axis; Described inverted round stage hole 1 upper bottom surface diameter is less than round platform part 4 upper bottom surface diameter; First cylindrical hole 2 diameter is identical with inverted round stage hole 1 bottom surface diameter, and the second cylindrical hole 3 diameter is greater than the first cylindrical hole 2 diameter;
Present embodiment possesses following beneficial effect
1, in present embodiment, improved Siemens polycrystalline silicon reducing furnace graphite chuck can improve the operation stability of improved Siemens polycrystalline silicon reducing furnace, the inverted round stage hole of graphite chuck and silicon core conical surface uniform contact, thus avoid in electric current supply process due to silicon core and the uneven local temperature caused of graphite chuck localized contact point too high and cause by wall or excellent phenomenon;
2, graphite chuck project organization described in present embodiment simple, be easy to processing, without the need to plus structural, silicon core is fixed in use procedure simultaneously, but silicon core rely on self gravitation can with graphite chuck uniform contact, and simple to operate, easy to use;
3, described in present embodiment, needed for graphite chuck, graphite material is few, and cost is low.
Embodiment two: present embodiment and embodiment one unlike: the side of the second described cylindrical hole 3 is smooth.Other step is identical with embodiment one with parameter.
Embodiment three: present embodiment and embodiment one or two unlike: the side of the second described cylindrical hole 3 is with internal thread.Other step is identical with embodiment one or two with parameter.
Embodiment four: the using method of present embodiment improved Siemens polycrystalline silicon reducing furnace graphite chuck is carried out in accordance with the following steps:
One, silicon core is processed
Silicon core lower end is processed into the inverted round stage of tapering identical with inverted round stage hole 1; The upper bottom surface diameter of the inverted round stage of the cylindrical silicon core after described processing is greater than the upper bottom surface diameter in inverted round stage hole 1;
Two, assemble
Inverted round stage one end of silicon core after processing in step one is inserted in the inverted round stage hole 1 of graphite chuck, and the graphite chuck after assembling is fixed on polycrystalline silicon reduction furnace base plate and electrode insertion.
Present embodiment possesses following beneficial effect
1, improved Siemens polycrystalline silicon reducing furnace graphite chuck described in present embodiment and using method thereof can improve the operation stability of improved Siemens polycrystalline silicon reducing furnace, the inverted round stage hole of graphite chuck and silicon core conical surface uniform contact, thus avoid the too high initiation of point of contact local temperature in electric current supply process by wall or excellent phenomenon;
2, the graphite chuck project organization of present embodiment simple, be easy to processing, without the need to plus structural, silicon core is fixed in use procedure simultaneously, but rely on silicon core self gravitation can with graphite chuck uniform contact, and simple to operate, easy to use;
Needed for the graphite chuck of 3, present embodiment, graphite material is few, and cost is low.
Embodiment five: one of present embodiment and embodiment one to four are circle silicon core unlike: the silicon core described in step one.Other step is identical with one of parameter and embodiment one to four.
Embodiment six: one of present embodiment and embodiment one to five are unlike the silicon core side of being silicon core described in step one.Other step is identical with one of parameter and embodiment one to five.
Verify effect of the present invention by following examples, and embodiment should not be interpreted as being limited to the specific embodiment of setting forth here.On the contrary, provide these embodiments to be to explain principle of the present invention and practical application thereof, thus enable others skilled in the art understand various embodiment of the present invention and be suitable for the various amendments of certain expected application.
Beneficial effect of the present invention is verified by following examples:
Embodiment 1:
Improved Siemens polycrystalline silicon reducing furnace graphite chuck described in the present embodiment, comprise round platform part 4, annular recesses 5, column part 6 and flange 7, round platform part 4 is above annular recesses 5, and column part 6 is below annular recesses 5, and flange 7 is on the excircle of column part 6 bottom; Round platform part 4 and column part 6 center are communicating aperture, are followed successively by inverted round stage hole 1, first cylindrical hole 2 and the second cylindrical hole 3 from top to bottom; The center of inverted round stage hole 1, first cylindrical hole 2 and the second cylindrical hole 3 on the same axis; Described inverted round stage hole 1 upper bottom surface diameter is less than round platform part 4 upper bottom surface diameter; First cylindrical hole 2 diameter is identical with inverted round stage hole 1 bottom surface diameter, and the second cylindrical hole 3 diameter is greater than the first cylindrical hole 2 diameter;
The side of the second described cylindrical hole 3 is with internal thread; Described flange 7 and the effect of the second cylindrical hole 3 better fix graphite chuck;
The using method of described improved Siemens polycrystalline silicon reducing furnace graphite chuck is carried out in accordance with the following steps:
One, silicon core is processed
Silicon core lower end is processed into the inverted round stage of tapering identical with inverted round stage hole 1; The upper bottom surface diameter of the inverted round stage of the cylindrical silicon core after described processing is greater than the upper bottom surface diameter in inverted round stage hole 1; Described silicon core is circle silicon core;
Two, assemble
Inverted round stage one end of silicon core after processing in step one is inserted in the inverted round stage hole 1 of graphite chuck, and the graphite chuck after assembling is fixed on polycrystalline silicon reduction furnace base plate and electrode insertion;
Fig. 3 is the sectional view of the round silicon core that the present embodiment 1 is processed, and wherein 8 is the inverted round stage processed; Fig. 4 is the vertical view of the round silicon core that the present embodiment 1 is processed; Fig. 5 is that the present embodiment graphite chuck assembles schematic diagram with circle silicon core, and upper end is the silicon core after processing, and lower end is graphite chuck;
The present embodiment possesses following beneficial effect:
1, in the present embodiment, improved Siemens polycrystalline silicon reducing furnace graphite chuck and using method thereof can improve the operation stability of improved Siemens polycrystalline silicon reducing furnace, the inverted round stage hole of graphite chuck and silicon core conical surface uniform contact, thus avoid in electric current supply process due to silicon core and the uneven local temperature caused of graphite chuck localized contact point too high and cause by wall or excellent phenomenon;
2, the graphite chuck project organization of the present embodiment simple, be easy to processing, without the need to plus structural, silicon core is fixed in use procedure simultaneously, but rely on silicon core self gravitation can with graphite chuck uniform contact, and simple to operate, easy to use;
Needed for the graphite chuck of 3, the present embodiment, graphite material is few, and cost is low.
Embodiment 2:
Improved Siemens polycrystalline silicon reducing furnace graphite chuck described in the present embodiment, comprise round platform part 4, annular recesses 5, column part 6 and flange 7, round platform part 4 is above annular recesses 5, and column part 6 is below annular recesses 5, and flange 7 is on the excircle of column part 6 bottom; Round platform part 4 and column part 6 center are communicating aperture, are followed successively by inverted round stage hole 1, first cylindrical hole 2 and the second cylindrical hole 3 from top to bottom; The center of inverted round stage hole 1, first cylindrical hole 2 and the second cylindrical hole 3 on the same axis; Described inverted round stage hole 1 upper bottom surface diameter is less than round platform part 4 upper bottom surface diameter; First cylindrical hole 2 diameter is identical with inverted round stage hole 1 bottom surface diameter, and the second cylindrical hole 3 diameter is greater than the first cylindrical hole 2 diameter;
The side of the second described cylindrical hole 3 is with internal thread; Described flange 7 and the effect of the second cylindrical hole 3 better fix graphite chuck;
The using method of described polycrystalline silicon reducing furnace graphite chuck is carried out in accordance with the following steps:
One, silicon core is processed
Silicon core lower end is processed into the inverted round stage of tapering identical with inverted round stage hole 1; The upper bottom surface diameter of the inverted round stage of the round silicon core after described processing is greater than the upper bottom surface diameter in inverted round stage hole 1; The described silicon core side of being silicon core;
Two, assemble
Inverted round stage one end of silicon core after processing in step one is inserted in the inverted round stage hole 1 of graphite chuck, and the graphite chuck after assembling is fixed on polycrystalline silicon reduction furnace base plate and electrode insertion;
Fig. 6 is the sectional view of the square silicon core of the present embodiment processing, and wherein 9 is the inverted round stage processed; Fig. 7 is the vertical view of the square silicon core that embodiment 2 is processed;
The present embodiment possesses following beneficial effect:
1, in the present embodiment, improved Siemens polycrystalline silicon reducing furnace graphite chuck and using method thereof can improve the operation stability of improved Siemens polycrystalline silicon reducing furnace, the inverted round stage hole of graphite chuck and silicon core conical surface uniform contact, thus avoid in electric current supply process due to silicon core and the uneven local temperature caused of graphite chuck localized contact point too high and cause by wall or excellent phenomenon;
2, the graphite chuck project organization of the present embodiment simple, be easy to processing, without the need to plus structural, silicon core is fixed in use procedure simultaneously, but rely on silicon core self gravitation can with graphite chuck uniform contact, and simple to operate, easy to use;
Needed for the graphite chuck of 3, the present embodiment, graphite material is few, and cost is low.
Claims (4)
1. an improved Siemens polycrystalline silicon reducing furnace graphite chuck, it is characterized in that this graphite chuck comprises round platform part (4), annular recesses (5), column part (6) and flange (7), round platform part (4) is in annular recesses (5) top, column part (6) is in annular recesses (5) below, and flange (7) is on the excircle of column part (6) bottom; Round platform part (4) and column part (6) center are communicating aperture, are followed successively by inverted round stage hole (1), the first cylindrical hole (2) and the second cylindrical hole (3) from top to bottom; Inverted round stage hole (1), the center of the first cylindrical hole (2) and the second cylindrical hole (3) is on the same axis; Described inverted round stage hole (1) upper bottom surface diameter is less than round platform part (4) upper bottom surface diameter; First cylindrical hole (2) diameter is identical with inverted round stage hole (1) bottom surface diameter, and the second cylindrical hole (3) diameter is greater than the first cylindrical hole (2) diameter.
2. a kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck according to claim 1, the side that it is characterized in that described the second cylindrical hole (3) is smooth or with internal thread.
3. a using method for improved Siemens polycrystalline silicon reducing furnace graphite chuck as claimed in claim 1, is characterized in that the method is carried out in accordance with the following steps:
One, silicon core is processed
Silicon core lower end is processed into the inverted round stage with inverted round stage hole (1) identical tapering; The upper bottom surface diameter of the inverted round stage of the silicon core after described processing is greater than the upper bottom surface diameter in inverted round stage hole (1);
Two, assemble
Inverted round stage one end of silicon core after processing in step one is inserted in the inverted round stage hole (1) of graphite chuck, and the graphite chuck after assembling is fixed on polycrystalline silicon reduction furnace base plate and electrode insertion.
4. the using method of a kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck according to claim 3, is characterized in that the silicon core described in step one is circle silicon core or square silicon core.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511018855.8A CN105384172B (en) | 2015-12-29 | 2015-12-29 | A kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511018855.8A CN105384172B (en) | 2015-12-29 | 2015-12-29 | A kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105384172A true CN105384172A (en) | 2016-03-09 |
| CN105384172B CN105384172B (en) | 2017-09-22 |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5284640A (en) * | 1989-12-26 | 1994-02-08 | Advanced Silicon Materials, Inc. | Graphite chuck having a hydrogen impervious outer coating layer |
| CN201305655Y (en) * | 2008-11-24 | 2009-09-09 | 四川永祥多晶硅有限公司 | Connecting devices of polycrystalline silicon hydrogen reduction furnace silicon core rods and graphite clamping heads |
| CN101691221A (en) * | 2009-10-12 | 2010-04-07 | 倪宝达 | Self-locking graphite violet gold chuck |
| CN201762112U (en) * | 2010-08-30 | 2011-03-16 | 国电宁夏太阳能有限公司 | Silicon core mounting device of reducing furnace |
| CN202063727U (en) * | 2011-03-23 | 2011-12-07 | 四川瑞能硅材料有限公司 | Chuck for polycrystalline silicon reduction furnace |
| CN202246096U (en) * | 2011-09-26 | 2012-05-30 | 江西赛维Ldk光伏硅科技有限公司 | Graphite chuck capable of being used repeatedly |
| CN203065630U (en) * | 2013-02-20 | 2013-07-17 | 江西豪安能源科技有限公司 | Graphite chuck for straightly pulling single crystal |
| KR101302231B1 (en) * | 2012-02-22 | 2013-09-02 | 최진석 | Two Pieces Graphite Chuck |
| CN203440093U (en) * | 2013-06-25 | 2014-02-19 | 山西潞安矿业(集团)有限责任公司 | Elastic graphite clamp |
| CN203593628U (en) * | 2013-12-16 | 2014-05-14 | 中国矿业大学 | Graphite assembly capable of being separated from base and rod and used for polycrystalline silicon reduction furnace |
-
2015
- 2015-12-29 CN CN201511018855.8A patent/CN105384172B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5284640A (en) * | 1989-12-26 | 1994-02-08 | Advanced Silicon Materials, Inc. | Graphite chuck having a hydrogen impervious outer coating layer |
| CN201305655Y (en) * | 2008-11-24 | 2009-09-09 | 四川永祥多晶硅有限公司 | Connecting devices of polycrystalline silicon hydrogen reduction furnace silicon core rods and graphite clamping heads |
| CN101691221A (en) * | 2009-10-12 | 2010-04-07 | 倪宝达 | Self-locking graphite violet gold chuck |
| CN201762112U (en) * | 2010-08-30 | 2011-03-16 | 国电宁夏太阳能有限公司 | Silicon core mounting device of reducing furnace |
| CN202063727U (en) * | 2011-03-23 | 2011-12-07 | 四川瑞能硅材料有限公司 | Chuck for polycrystalline silicon reduction furnace |
| CN202246096U (en) * | 2011-09-26 | 2012-05-30 | 江西赛维Ldk光伏硅科技有限公司 | Graphite chuck capable of being used repeatedly |
| KR101302231B1 (en) * | 2012-02-22 | 2013-09-02 | 최진석 | Two Pieces Graphite Chuck |
| CN203065630U (en) * | 2013-02-20 | 2013-07-17 | 江西豪安能源科技有限公司 | Graphite chuck for straightly pulling single crystal |
| CN203440093U (en) * | 2013-06-25 | 2014-02-19 | 山西潞安矿业(集团)有限责任公司 | Elastic graphite clamp |
| CN203593628U (en) * | 2013-12-16 | 2014-05-14 | 中国矿业大学 | Graphite assembly capable of being separated from base and rod and used for polycrystalline silicon reduction furnace |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105384172B (en) | 2017-09-22 |
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