CN203065630U - Graphite chuck for straightly pulling single crystal - Google Patents
Graphite chuck for straightly pulling single crystal Download PDFInfo
- Publication number
- CN203065630U CN203065630U CN 201320109470 CN201320109470U CN203065630U CN 203065630 U CN203065630 U CN 203065630U CN 201320109470 CN201320109470 CN 201320109470 CN 201320109470 U CN201320109470 U CN 201320109470U CN 203065630 U CN203065630 U CN 203065630U
- Authority
- CN
- China
- Prior art keywords
- chuck
- shaped
- molybdenum
- single crystal
- graphite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to a graphite chuck for straightly pulling single crystal, wherein the outline of the chuck is shaped like a circular platform cylinder, and the inner part of the chuck is of a T-shaped through hole structure. The chuck is made from a high-purity isostatic pressing formed graphite material, the volume density is larger than 1.85g/cm3, and the compressive strength is larger than 85MPa. The T-shaped through hole structure is adopted in the chuck, so that seed crystals with T-shaped structures can be utilized. The structure is capable of avoiding the problem that the seed crystals break due to molybdenum pin deformation during crystal pulling in the process of utilizing the molybdenum chuck.
Description
Technical field:
The utility model relates to a kind of for the pulling of crystals graphite chuck.
Background technology
Pulling of silicon single crystal generally uses the molybdenum chuck to do seed chuck at present.In use mainly there is following problem in such chuck: one, to fix by the molybdenum pin between molybdenum chuck and the seed crystal, and in the long-term practical process, thereby molybdenum pin volatility causes seed crystal to crack, and the seed crystal fracture easily takes place when the weight of crystal acquires a certain degree.Two, molybdenum at high temperature easily and pasc reaction, forms the compound of silicon molybdenum on the surface in the life-time service process, may come off in the crystal pulling process, causes heavy metal contamination, causes the problems such as the disconnected rib of process of growth, minority carrier life time reduction of the monocrystalline of pulling out.
The utility model content
The present utility model has designed a kind of pulling of crystals graphite chuck, and this chuck profile is that cylinder connects round platform, inner vertical T-shaped through-hole structure.This chuck uses high-purity isostatic pressing formed graphite material to make, and volume density is greater than 1.85g/cm
3, ultimate compression strength is greater than 85MPa.
This chuck adopts high strength graphite to make, and has avoided metal molybdenum and pasc reaction to generate the drawback that objectionable impurities influences crystal growth, and graphite material clears up with dust-free paper, is different from the molybdenum chuck and need polishes and could clear up.The inner T type through-hole structure that adopts of chuck can use T type structure seed crystal.This structure has avoided that the sex change of molybdenum pin causes seed crystal breakage problem in the crystal pulling process in the use of molybdenum chuck.
Description of drawings
Fig. 1 is the vertical cross section figure of chuck;
Fig. 2 is chuck A-A view.
Embodiment
Pulling of crystals graphite chuck, this chuck profile are that round platform connects cylinder, inner vertical T-shaped through-hole structure.This chuck uses high-purity isostatic pressing formed graphite material to make, and volume density is greater than 1.85g/cm
3, ultimate compression strength is greater than 85MPa.Before using, must calcine 12 hours this chuck.During use special T type seed crystal packed into behind the chuck, after chuck and stainless steel weight are coupled together by the molybdenum bolt, just can hang on the wireline and use.
Claims (2)
1. a pulling of crystals graphite chuck is characterized in that, this chuck profile is that cylinder connects round platform, inner vertical T-shaped through-hole structure.
2. chuck as claimed in claim 1 is characterized in that, chuck uses high-purity isostatic pressing formed graphite material to make, and volume density is greater than 1.85g/cm
3, ultimate compression strength is greater than 85MPa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320109470 CN203065630U (en) | 2013-02-20 | 2013-02-20 | Graphite chuck for straightly pulling single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320109470 CN203065630U (en) | 2013-02-20 | 2013-02-20 | Graphite chuck for straightly pulling single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203065630U true CN203065630U (en) | 2013-07-17 |
Family
ID=48764442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320109470 Expired - Fee Related CN203065630U (en) | 2013-02-20 | 2013-02-20 | Graphite chuck for straightly pulling single crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203065630U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105384172A (en) * | 2015-12-29 | 2016-03-09 | 哈尔滨工业大学 | Graphite chuck for improving Siemens Method polycrystalline silicon reduction furnace and use method of graphite chuck |
| CN107794565A (en) * | 2016-09-06 | 2018-03-13 | 上海新昇半导体科技有限公司 | Seedholder and czochralski crystal growing furnace |
-
2013
- 2013-02-20 CN CN 201320109470 patent/CN203065630U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105384172A (en) * | 2015-12-29 | 2016-03-09 | 哈尔滨工业大学 | Graphite chuck for improving Siemens Method polycrystalline silicon reduction furnace and use method of graphite chuck |
| CN105384172B (en) * | 2015-12-29 | 2017-09-22 | 哈尔滨工业大学 | A kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method |
| CN107794565A (en) * | 2016-09-06 | 2018-03-13 | 上海新昇半导体科技有限公司 | Seedholder and czochralski crystal growing furnace |
| CN107794565B (en) * | 2016-09-06 | 2020-11-13 | 上海新昇半导体科技有限公司 | Seed crystal chuck and vertical pulling single crystal furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130717 Termination date: 20160220 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |