CN202063727U - Chuck for polycrystalline silicon reduction furnace - Google Patents

Chuck for polycrystalline silicon reduction furnace Download PDF

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Publication number
CN202063727U
CN202063727U CN 201120077106 CN201120077106U CN202063727U CN 202063727 U CN202063727 U CN 202063727U CN 201120077106 CN201120077106 CN 201120077106 CN 201120077106 U CN201120077106 U CN 201120077106U CN 202063727 U CN202063727 U CN 202063727U
Authority
CN
China
Prior art keywords
chuck
folder
silicon core
lobe
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201120077106
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Chinese (zh)
Inventor
徐予晗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SICHUAN RENESOLA SILICON MATERIAL CO Ltd
Original Assignee
SICHUAN RENESOLA SILICON MATERIAL CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SICHUAN RENESOLA SILICON MATERIAL CO Ltd filed Critical SICHUAN RENESOLA SILICON MATERIAL CO Ltd
Priority to CN 201120077106 priority Critical patent/CN202063727U/en
Application granted granted Critical
Publication of CN202063727U publication Critical patent/CN202063727U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model discloses a chuck for a polycrystalline silicon reduction furnace, belonging to the field of parts of the reduction furnace. The chuck for the polycrystalline silicon reduction furnace clamps the lower end of a silicon core (1); the chuck (3) is mainly formed by the combination of 3 clamping petals; the silicon core (1) is clamped by the inner sides of the 3 clamping petals together, wherein a clamping petal oblique angle (delta) is arranged at the top end of the inner side of any one clamping petal. The chuck for the polycrystalline silicon reduction furnace is simply structured and is convenient to use; the silicon core is hard to crack and is hard to lodge; the deposited silicon core can be firmer; and the basis of the silicon core is more stable and the chuck is applicable to popularizing.

Description

A kind of polycrystalline silicon reducing furnace chuck
Technical field
The utility model relates to a kind of component of reduction furnace, the clamping device that particularly a kind of polycrystalline silicon reducing furnace is used.
Background technology
Graphite chuck is the equipment that is used for clamping silicon core, conduction in the polycrystalline silicon reducing furnace.
There is the problem of silicon core easy fracture in the structure of existing graphite chuck, and the silicon rod lodging takes place easily.Silicon wicking surface depositing silicon, and the part that the card lobe clamps be not because reach material, just there is not depositing silicon yet, it is big that its silicon core diameter does not become, and therefore two-part silicon core diameter is not of uniform size, and the part that the card lobe clamps is with thick, the long silicon rod of very thin diameter carrying.Card plane, lobe top becomes an angle of 90 degrees with the silicon core, promptly blocks the top inner side-wall that lobe clamps silicon rod and is close to the silicon rod outer wall is parallel, behind silicon wicking surface depositing silicon, there is stress concentration in place, card plane, lobe top, therefore the root of silicon core is very easily broken, and furnace pressure has fluctuation slightly, the silicon core can be blown down.In the ordinary construction, when the silicon core generally will grow into 35-40mm, graphite card lobe top end surface just can reach the above high temperature of 1000 degree, and the surface could begin depositing silicon, and after will blocking lobe and encasing, silicon rod just can tide over a critical period, and can compare the growth of safety and steady.When blow-on, the silicon wicking surface diameter stage is exactly the stage of the easiest generation lodging.
Existing graphite chuck has two kinds of results, and there is the unsteady situation of silicon core clamping in two lobe formula or fFour piece types.Two lobe formula discontinuity, it is very tight that a lobe presss from both sides, and another lobe is pine relatively, clamps part because contact area is little, causes the local pyrexia amount big, and the easy local superheating fusing of silicon core lodges.And the fFour piece type chuck, because structural reason unless the silicon core is theoretic right cylinder, does not touch the silicon core otherwise always have a lobe chuck, thereby the silicon core is fixing bad, deflection lodges easily.
The utility model content
Goal of the invention of the present utility model is: at the problem of above-mentioned existence, provide a kind of simple in structure, easy to use, the silicon core is easy fracture and the difficult polycrystalline silicon reducing furnace chuck that lodges not, adopt this chuck, but can make the also depositing silicon that is held partly of silicon core, make that post-depositional silicon core is more firm.
The technical solution adopted in the utility model is as follows:
Polycrystalline silicon reducing furnace chuck of the present utility model clamps the lower end of silicon core, and described chuck is mainly combined by 3 folder lobes, and the inboards of these 3 folder lobes clamp the silicon core jointly, and the inboard top of wherein arbitrary folder lobe is provided with folder lobe oblique angle.
Owing to adopted said structure, chuck is mainly combined by 3 folder lobes, pass through effect by 3 folder lobes, be used to clamp the silicon core, and each folder on lobe stressed evenly, the structures of 3 card lobes have to neutrality, the inboard that can guarantee each card lobe all touches the silicon core, feasible fixing good with conductivity, respond well in actual production, phenomenons such as lodging can not take place in the silicon core.The inboard top of wherein arbitrary folder lobe is provided with folder lobe oblique angle, can avoid the junction of silicon core and chuck to get stressed concentrating.Polycrystalline silicon reducing furnace chuck of the present utility model, simple in structure, easy to use, the silicon core is easy fracture and difficult lodging not.
Polycrystalline silicon reducing furnace chuck of the present utility model, the size at described folder lobe oblique angle is below 15 °.
Owing to adopted said structure, the size at this folder lobe oblique angle is selected low-angle scarp, avoid the junction of silicon core and chuck to get stressed concentrating, and the firmness that strengthens the silicon core at the very start that from reduction furnace, reacts, the time that the initial stage lodges easily can be shortened greatly.
Polycrystalline silicon reducing furnace chuck of the present utility model, the face of the clamping silicon core of arbitrary folder lobe inboard is provided with at least 1 groove.
Owing to adopted said structure, the face of the clamping silicon core of folder lobe inboard is provided with at least 1 groove, makes the groove of chuck inboard can contact with material, but also depositing silicon, make that post-depositional silicon core can be more firm, the foundation of silicon core is more steady to be leaned on, more not easy fracture and difficult lodging.
There is the gap in polycrystalline silicon reducing furnace chuck of the present utility model between the side of two adjacent folder lobes, forms the folder lobe angles between the two folder lobes.
Owing to adopted said structure, there is the gap between the side of two adjacent folder lobes, make material to enter into the chuck inboard from this this gap, in groove, deposit, make that post-depositional silicon core can be more firm, the foundation of silicon core is more steady to be leaned on, more difficult lodging.
Polycrystalline silicon reducing furnace chuck of the present utility model, the size of described folder lobe angle is below 9 °.
Owing to adopted said structure, this folder lobe angle is difficult for excessive, if should press from both sides lobe angle mistake, contact area between the inboard of chuck and the silicon core will be very little, influence the firm of silicon core, therefore can select to press from both sides the lobe angle, to satisfy the firm needs of silicon core below 9 °.
In sum, owing to adopted technique scheme, the beneficial effects of the utility model are:
1. polycrystalline silicon reducing furnace chuck of the present utility model, simple in structure, easy to use, the silicon core is easy fracture and difficult lodging not;
2. polycrystalline silicon reducing furnace chuck of the present utility model, post-depositional silicon core can be more firm, and the foundation of silicon core is more steady to be leaned on, and is fit to promote.
Description of drawings
Fig. 1 is the polycrystalline silicon reducing furnace of the present utility model structural representation of chuck when original the installation;
Fig. 2 is the vertical view of polycrystalline silicon reducing furnace of the present utility model with chuck;
Fig. 3 is the structural representation of single folder lobe in the utility model;
Fig. 4 is the polycrystalline silicon reducing furnace of the present utility model structural representation of chuck after use.
Mark among the figure: 1-silicon core, 2-chuck, the 2a-first folder lobe, the 2b-second folder lobe, 2c-the 3rd folder lobe, 3-groove, 4-material, β-folder lobe angle, δ-folder lobe oblique angle.
Embodiment
Below in conjunction with accompanying drawing, the utility model is done detailed explanation.
In order to make the purpose of this utility model, technical scheme and advantage clearer,, the utility model is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
As shown in Figures 1 to 4, polycrystalline silicon reducing furnace chuck of the present utility model, clamp the lower end of silicon core 1, described chuck 2 is mainly combined by 3 folder lobes, the inboard acting in conjunction of these 3 folder lobes clamps silicon core 1, the inboard top of wherein arbitrary folder lobe is provided with folder lobe oblique angle δ, the size of described folder lobe oblique angle δ can be selected arbitrarily in 0~15 °, but can not be 0, the face of the clamping silicon core 1 of arbitrary folder lobe inboard is provided with 3 grooves 3, makes the groove 3 of chuck 2 inboards can contact with material 4, but also depositing silicon, make that post-depositional silicon core 1 can be more firm, the foundation of silicon core 1 is more steady to be leaned on, more not easy fracture and difficult lodging.There is the gap between the side of two adjacent folder lobes, form the folder lobe angle β between the two folder lobes, promptly between the first folder lobe 2a and the second folder lobe 2b, between the second folder lobe 2b and the 3rd folder lobe 2c, the first folder lobe 2a and the 3rd presss from both sides between the lobe 2c all existence and presss from both sides lobe angle β, the size of described folder lobe angle β is selected in 0~9 °, but can not be 0.
Polycrystalline silicon reducing furnace chuck of the present utility model, chuck 2 is mainly combined by 3 folder lobes, pass through effect by 3 folder lobes, be used to clamp silicon core 1, and each folder on lobe stressed evenly, the structures of 3 card lobes have to neutrality, the inboard that can guarantee each card lobe all touches silicon core 1, feasible fixing good with conductivity, respond well in actual production, phenomenons such as lodging can not take place in silicon core 1.The inboard top of wherein arbitrary folder lobe is provided with folder lobe oblique angle, can avoid the junction of silicon core and chuck 2 to get stressed concentrating.The size of folder lobe oblique angle δ is selected low-angle scarp, avoids the silicon core 1 and the junction of chuck 2 to get stressed concentrating, and the firmness that strengthens the silicon core at the very start that reacts from reduction furnace, the time that the initial stage lodges easily can be shortened greatly.Folder lobe angle β is difficult for excessive, if it is excessive to press from both sides lobe angle β, the contact area between the inboard of chuck 2 and the silicon core 1 will be very little, influences the firm of silicon core, therefore can select to press from both sides the lobe angle below 9 °, to satisfy the firm needs of silicon core.
Polycrystalline silicon reducing furnace chuck of the present utility model, simple in structure, easy to use, the silicon core is easy fracture and difficult lodging not; Post-depositional silicon core can be more firm, and the foundation of silicon core is more steady to be leaned on, and is fit to promote.
The above only is preferred embodiment of the present utility model; not in order to restriction the utility model; all any modifications of within spirit of the present utility model and principle, being done, be equal to and replace and improvement etc., all should be included within the protection domain of the present utility model.

Claims (5)

1. polycrystalline silicon reducing furnace chuck, clamp the lower end of silicon core (1), it is characterized in that: described chuck (2) is mainly combined by 3 folder lobes, and the inboard of these 3 folder lobes clamps silicon core (1) jointly, and the inboard top of wherein arbitrary folder lobe is provided with folder lobe oblique angle (δ).
2. as claim 1 described polycrystalline silicon reducing furnace chuck, it is characterized in that: the size at described folder lobe oblique angle (δ) is below 15 °.
3. as claim 1 or 2 described polycrystalline silicon reducing furnace chucks, it is characterized in that: the face of the clamping silicon core (1) of arbitrary folder lobe inboard is provided with at least 1 groove (3).
4. as claim 3 described polycrystalline silicon reducing furnace chucks, it is characterized in that: have the gap between the side of two adjacent folder lobes, form the folder lobe angles (β) between the two folder lobes.
5. as claim 4 described polycrystalline silicon reducing furnace chucks, it is characterized in that: the size of described folder lobe angle (β) is below 9 °.
CN 201120077106 2011-03-23 2011-03-23 Chuck for polycrystalline silicon reduction furnace Expired - Fee Related CN202063727U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201120077106 CN202063727U (en) 2011-03-23 2011-03-23 Chuck for polycrystalline silicon reduction furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201120077106 CN202063727U (en) 2011-03-23 2011-03-23 Chuck for polycrystalline silicon reduction furnace

Publications (1)

Publication Number Publication Date
CN202063727U true CN202063727U (en) 2011-12-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201120077106 Expired - Fee Related CN202063727U (en) 2011-03-23 2011-03-23 Chuck for polycrystalline silicon reduction furnace

Country Status (1)

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CN (1) CN202063727U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103449441A (en) * 2013-08-26 2013-12-18 内蒙古盾安光伏科技有限公司 Graphite electrode
CN105384172A (en) * 2015-12-29 2016-03-09 哈尔滨工业大学 Graphite chuck for improving Siemens Method polycrystalline silicon reduction furnace and use method of graphite chuck

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103449441A (en) * 2013-08-26 2013-12-18 内蒙古盾安光伏科技有限公司 Graphite electrode
CN105384172A (en) * 2015-12-29 2016-03-09 哈尔滨工业大学 Graphite chuck for improving Siemens Method polycrystalline silicon reduction furnace and use method of graphite chuck
CN105384172B (en) * 2015-12-29 2017-09-22 哈尔滨工业大学 A kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111207

Termination date: 20200323