CN105382947A - Secondary cutting method of silicon wafers - Google Patents
Secondary cutting method of silicon wafers Download PDFInfo
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- CN105382947A CN105382947A CN201510679054.XA CN201510679054A CN105382947A CN 105382947 A CN105382947 A CN 105382947A CN 201510679054 A CN201510679054 A CN 201510679054A CN 105382947 A CN105382947 A CN 105382947A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 228
- 239000010703 silicon Substances 0.000 title claims abstract description 228
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 224
- 238000005520 cutting process Methods 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 62
- 235000012431 wafers Nutrition 0.000 title abstract 11
- 238000009792 diffusion process Methods 0.000 claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 239000011347 resin Substances 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000003292 glue Substances 0.000 claims abstract description 6
- 230000005484 gravity Effects 0.000 claims description 8
- 229910000831 Steel Inorganic materials 0.000 claims description 5
- 238000002224 dissection Methods 0.000 claims description 5
- 238000003892 spreading Methods 0.000 claims description 5
- 230000007480 spreading Effects 0.000 claims description 5
- 239000010959 steel Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 239000002994 raw material Substances 0.000 abstract description 6
- 230000008569 process Effects 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011017 operating method Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005111 flow chemistry technique Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention provides a secondary cutting method of silicon wafers. The secondary cutting method comprises the steps that 1, locating grooves are cut out, wherein the cutter point locating grooves for secondary cutting are firstly cut out in silicon single crystal, and then primary cutting is carried out on the silicon single crystal; 2, silicon wafers are fixed, wherein the silicon wafers subjected to primary cutting are subjected to diffusing and thinning sorting to obtain silicon wafers to be secondarily cut, the silicon wafers to be secondarily cut are fixed in silicon wafer slitting and fixing pieces in a side-by-side and equal-distance manner or in a tight manner, and an integral workpiece is formed and fixed by glue; and 3, locating cutting is carried out, wherein the integral workpiece is fixed to a multi-wire cutting machine directly or through a resin strip, cutting lines are aligned to the locating grooves of the silicon wafers fixed in the silicon wafer slitting and fixing pieces one by one for alignment locating, and after locating is accurate, the silicon wafers are halved along the locating grooves. According to the method, the utilization rate of raw materials is increased to a large degree, and the device production cost is greatly reduced; and the method is used for production of silicon polished wafers with heavily-doped diffusion layers, and the uniwafer electric consumption can be lowered by about 50%.
Description
Technical field
The invention belongs to czochralski silicon monocrystal cutting technique field, especially relating to a kind of multi-line cutting machine will cut multiple silicon chip and again carry out the method for secondary cut.
Background technology
Current market, super large-scale integration great majority Czochralski silicon wafer is as backing material, the ever-larger diameters of silicon chip and high surface smoothness are the Main way that it develops, and multi-wire saw technology has greater advantage in raising evenness of silicon wafer and surface geometry parameter compared with miscellaneous equipment (inside diameter slicer etc.).In multi-wire saw, by multi-line cutting machine is disposable, silicon single crystal bar is cut into certain thickness silicon chip in the past, thus realize the batch cutting of silicon chip.And in actual applications, need a large amount of silicon chip again to cut to be divided into two, to adapt to the specific use of silicon chip, this is difficult to realize in current multi-wire saw technology.
In the manufacture process of some device, use the silicon polished replacement silicon epitaxial wafer of band heavily doped diffusion layer to be lowered into product cost, its manufacture process as shown in Figure 1, in diffusion furnace, the two sides of the slight silicon abrasive sheet of doping (representing with N-) of N-type (phosphorus) is all exposed in the diffusion atmosphere of phosphorus, spread through long-time high temperature phosphorous, the two sides of silicon abrasive sheet all can form symmetrical N-type (phosphorus) severe doped region (representing with N+).Silicon abrasive sheet in the preparation flow generally adopted at present after (as shown in Figure 1) diffusion is thinning and polishing through the grinding of one side, remove one side severe doped region, form a slice and there is the silicon polished of N-/N+ structure, but this mode not only wastes raw material, and production efficiency is relatively low, be unfavorable for producing in enormous quantities.
Summary of the invention
In view of this, the present invention is intended to a kind of secondary cut method proposing silicon chip, to solve prior art Problems existing.
For achieving the above object, technical scheme of the present invention is achieved in that
A secondary cut method for silicon chip, described cutting method adopts conventional multi-line cutting method, it is characterized in that, comprises the steps:
(1) locating slot cutting: before a cutting process, first cut secondary cut edge of a knife locating slot on silicon single crystal, its object is used for secondary cut centering, then once cuts silicon single crystal;
(2) silicon chip is fixed: obtained treating secondary cut silicon chip after spreading thinning sorting by the silicon chip after once cutting, to treat that secondary cut silicon wafer side-by-side equidistantly or is closely fixed on silicon chip and cuts in fixture, and keep described locating slot in the same horizontal line, form an one-piece machine member and fix with glue;
(3) positional dissection: the one-piece machine member bondd in step (2) is fixed on multi-line cutting machine by resin streak or is directly fixed on multi-line cutting machine, line of cut is aimed at one by one and is fixed on the locating slot that silicon chip cuts the silicon chip in fixture and carries out centering location, carry out cutting silicon chip is divided into two along this locating slot after accurate positioning.
Further, treat that secondary cut silicon wafer side-by-side is equidistantly fixed on silicon chip and cuts in fixture in described step (3), the centering locate mode of employing is two centering locate modes that the gauze gap of the silicon chip gap alignment cutting steel wire of being cut by this silicon chip in fixture and silicon chip locating slot center line aim at line of cut.
Further, treating closely to overlay silicon chip by secondary cut silicon wafer side-by-side in described step (3), to cut in fixture bonding fixing, and the centering locate mode of employing is the four-way location survey mode of level and vertical direction.
Further, described clamping slot depth is 1-2mm.
Further, the secondary cut technology of described silicon chip, for the secondary cut technique after silicon chip diffusion, carries out diffusion thinning again after the silicon chip after DIFFUSION TREATMENT being carried out secondary cut.
Relative to prior art, the secondary cut method of silicon chip of the present invention has following advantage:
Multiple silicon chip is pre-set locating slot by the method in the present invention, and the silicon chip after once cutting closely or is equidistantly stacked along the locating slot edge of a knife, and it is bonding with resin streak by cutting fixture, then be fixed on multi-line cutting machine, the secondary cut of silicon chip is completed with multi-line cutting machine, cut into the silicon chip that twice quantity is thinner, this technology can change multi-line cutting machine can only cut silicon single crystal rod and can not the situation of cutting silicon wafer.In the silicon polished process of producing band heavily doped diffusion layer, use the method for this invention, silicon chip after multiple diffusion can be divided into two, then carry out the processing of grinding attenuated polishing to the cut surface of the silicon chip of the twice quantity obtained, what obtain twice quantity has the silicon polished of N-/N+ structure.Improve raw-material utilization rate so to a great extent, and greatly reduce device production cost, described for this invention method is used for the silicon polished production with heavily doped diffusion layer, the thick silicon chip being less than 1-2mm can be carried out secondary cut, about can reduce the monolithic power consumption of 50%.
The present invention also proposes a kind of silicon chip be applicable in the secondary cut method of silicon chip and cuts fixture, to realize the secondary cut of silicon chip.
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of silicon chip cuts fixture, it is that silicon chip cuts mould that described silicon chip cuts fixture, and treat that secondary cut silicon wafer side-by-side is equidistantly fixed described silicon chip and cut in mould, it is the rectangular structure open up and down surrounded by two pieces of parallel side plates and two pieces of parallel attachment plates that wherein said silicon chip cuts mould, the inner side of described side plate is evenly distributed with some grooves, and the groove one_to_one corresponding on two pieces of parallel side plates, the width of described groove is consistent with silicon chip width to be cut, for fixing described silicon chip to be cut.
Further, the cross section of mould is cut described in for " H " shape structure; Height h=silicon chip diameter+(2-3) mm of described mould; Described mould inner groovy gap width L=silicon wafer thickness+(1-2) mm.
Further, described side plate and described connecting plate are insulation board.
As another preferred version, described silicon chip cuts fixture, comprises a right angle platform and a gravity briquetting, and treats that secondary cut silicon chip closely overlays on described right angle platform, and described gravity briquetting is positioned at described inclination right angle platform tail end, for compressing silicon chip.
Further, described right angle platform slant setting when fixing silicon chip.
Relative to prior art, silicon chip of the present invention is cut fixture and is had following advantage:
The right angle platform be obliquely installed and gravity briquetting coordinate better to locate cuts precision before silicon chip cutting, while ensureing bonding 90 ° of silicon chip, to ensure between silicon chip gap and thickness scattered error minimum; Silicon chip is cut mould and is adopted between silicon chip and be separated fixed form, and this mode can avoid silicon chip to merge the cumulative errors produced, and mould upper end of cutting of the present invention has guiding extending design and can promote multi-line cutting machine and enter cutter precision simultaneously; The resin streak gap structure of lower end can ensure adhesive reinforcement better, makes to cut rear silicon chip TTV and thickness scattered error and a cutting silicon wafer very nearly the same.
Accompanying drawing explanation
The accompanying drawing forming a part of the present invention is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the silicon polished preparation flow of heavily doped diffusion layer in prior art;
Fig. 2 is the silicon polished preparation flow of heavily doped diffusion layer of the present invention;
Fig. 3 is the structural representation that silicon chip in secondary cut method of the present invention cuts mould;
Fig. 4 applies a kind of silicon chip and cuts fixture-silicon chip and cut mould is fixed cutting structural representation to silicon chip;
Fig. 5 applies another kind of silicon chip and cuts fixture and carry out the fixing structural representation of secondary cut to silicon chip.
Detailed description of the invention
It should be noted that, when not conflicting, the embodiment in the present invention and the feature in embodiment can combine mutually.
Below with reference to the accompanying drawings and describe the present invention in detail in conjunction with the embodiments.
A secondary cut method for silicon chip, described cutting method adopts conventional multi-line cutting method, it is characterized in that, comprises the steps:
(1) locating slot cutting: before a cutting process, first cut secondary cut edge of a knife locating slot on silicon single crystal, its object is used for secondary cut centering, then once cuts silicon single crystal;
(2) silicon chip is fixed: obtained treating secondary cut silicon chip after spreading thinning sorting by the silicon chip after once cutting, to treat that secondary cut silicon wafer side-by-side equidistantly or is closely fixed on silicon chip and cuts in fixture, and keep described locating slot in the same horizontal line, form an one-piece machine member and fix with glue;
(3) positional dissection: the one-piece machine member bondd in step (2) is fixed on multi-line cutting machine by resin streak or is directly fixed on multi-line cutting machine, line of cut is aimed at one by one and is fixed on the locating slot that silicon chip cuts the silicon chip in fixture and carries out centering location, carry out cutting silicon chip is divided into two along this locating slot after accurate positioning.
Wherein, treat that secondary cut silicon wafer side-by-side is equidistantly fixed on silicon chip and cuts in fixture in described step (3), the centering locate mode of employing is two centering locate modes that the gauze gap of the silicon chip gap alignment cutting steel wire of being cut by this silicon chip in fixture and silicon chip locating slot center line aim at line of cut; Closely overlaying silicon chip by secondary cut silicon wafer side-by-side if treat in described step (3), to cut in fixture bonding fixing, and the centering locate mode of employing is then the four-way location survey mode of level and vertical direction; In above-mentioned steps, no matter take which kind of silicon chip fixed form or centering mode, described clamping slot depth is 1-2mm.
The secondary cut technology of above-mentioned silicon chip, for the secondary cut technique after silicon chip diffusion, carries out diffusion thinning again after the silicon chip after DIFFUSION TREATMENT being carried out secondary cut.
Multiple silicon chip is pre-set locating slot by the method in the present invention, and the silicon chip after once cutting closely is stacked along the locating slot edge of a knife, and it is bonding with resin streak by cutting fixture, then be fixed on multi-line cutting machine or be directly fixed on multi-line cutting machine, the secondary cut of silicon chip is completed with multi-line cutting machine, cut into the silicon chip that twice quantity is thinner, this technology can change multi-line cutting machine can only cut silicon single crystal rod and can not the situation of cutting silicon wafer.In the silicon polished process of producing band heavily doped diffusion layer, use the method for this invention, silicon chip after multiple diffusion can be divided into two, then carry out the processing of grinding attenuated polishing to the cut surface of the silicon chip of the twice quantity obtained, what obtain twice quantity has the silicon polished of N-/N+ structure.Improve raw-material utilization rate so to a great extent, and greatly reduce device production cost, described for this invention method is used for the silicon polished production with heavily doped diffusion layer, the thick silicon chip being less than 1-2mm can be carried out secondary cut, about can reduce the monolithic power consumption of 50%.
As seen in figures 3-5, the fixture of cutting of the silicon chip secondary cut adopted in the present invention is R & D design workpiece voluntarily, object is the secondary cut that the method in subsidiary book invention implements to silicon chip, but the secondary cut method of silicon chip involved in the present invention is not limited to the fixation workpiece arrived mentioned by the present invention, other can play the method that the setting tool of same or similar fixation or fixed effect or frock all go in the present invention, the present invention simultaneously also can use some survey tools or frock in silicon chip position fixing process, be conventional silicon chip location survey tool.
As shown in Figure 3, for adopting method of the present invention, mould is cut to fixture-silicon chip of cutting that silicon chip carries out adopting in the process of secondary cut, it is the rectangular structure open up and down surrounded by two pieces of parallel side plates 21 and two pieces of parallel attachment plates 22, the inner side of described side plate 21 is evenly distributed with some grooves 1, and groove 1 one_to_one corresponding on two pieces of parallel side plates, the width of described groove 1 is consistent with silicon chip width to be cut, for fixing described silicon chip to be cut.
Described top of cutting mould 2 possesses the progradation of silicon chip guiding, particularly, the cross section of described connecting plate 22 is " H " shape structure, and this structure can ensure that the effect of guiding extension can be played for cutting steel wire in the upper end of mould 2, can promote multi-line cutting machine and enter cutter precision.
Meanwhile, in order to better fix silicon chip 3 to be cut, height h=silicon chip diameter+(2-3) mm of described mould 2; Described mould 2 inner groovy gap width L=silicon wafer thickness+(1-2) mm.In order to prevent the destruction for silicon chip performance in cutting process, described side plate and described connecting plate are insulation board.
Above-mentioned silicon chip is adopted to cut mould as cutting fixture, the operating procedure of silicon chip being carried out to secondary cut method is: 1) locating slot cutting: before a cutting process, first on silicon single crystal, cut secondary cut edge of a knife locating slot, clamping slot depth is 1-2mm, its object is used for secondary cut centering, then once cuts silicon single crystal;
2) silicon chip is fixed: obtained treating secondary cut silicon chip after spreading thinning sorting by the silicon chip after once cutting, to treat that secondary cut silicon wafer side-by-side is equidistantly fixed on silicon chip and cuts in mould, and keep described locating slot in the same horizontal line, form an one-piece machine member and fix with glue;
3) positional dissection: by step 2) in the one-piece machine member that bondd be bonded on resin streak, and described resin streak is fixed on multi-line cutting machine, adopt two centering locate modes of the gauze gap of the silicon chip gap alignment cutting steel wire of this mould and silicon chip locating slot center line being aimed at line of cut, carry out cutting silicon chip is divided into two along this locating slot after accurate positioning.
As shown in Figure 5, for adopting method of the present invention, fixture is cut to the another kind that silicon chip carries out adopting in the process of secondary cut, comprise right angle platform 5 and a gravity briquetting 6, and closely overlay (when described right angle platform is at fixing silicon chip slant setting) on described right angle platform 5 until secondary cut silicon chip 3, described gravity briquetting 6 is positioned at described inclination right angle platform 5 tail end, treats secondary cut silicon chip 3 for compressing.
Employing said apparatus as the operating procedure of the secondary cut method of cutting fixture is:
1) locating slot cutting: before a cutting process, first cut secondary cut edge of a knife locating slot on silicon single crystal, clamping slot depth is 1-2mm, its object is used for secondary cut centering, then once cuts silicon single crystal;
2) silicon chip is fixed: obtained treating secondary cut silicon chip after spreading thinning sorting by the silicon chip after once cutting, to treat that secondary cut silicon chip is closely stacked together along locating slot direction, and keep described locating slot in the same horizontal line, form an one-piece machine member and fix with glue, and entirety is positioned on tilted-putted 90 ° of right angle platforms, utilize gravity briquetting to compress at table top tail end, be then bonded together, with to ensure between silicon chip gap and thickness scattered error minimum;
3) positional dissection: the one-piece machine member glued directly is fixed on multi-line cutting machine, in conjunction with four location surveys (i.e. the four-way location survey mode of level and vertical direction) with once cut locating slot centering cutting position, along locating slot direction, silicon chip is carried out secondary cut.
Embodiment
Raw material: Φ 125mm heavy doping silicon single crystal rod.
Cutting parameter is as follows:
According to above-mentioned cutting parameter, the technological process of final polished silicon wafer and relevant parameter contrast are obtained as following table according to the flow processing silicon chip of cutting shown in the old process shown in Fig. 1 and Fig. 2 respectively to raw silicon crystal bar:
Contrasted by Fig. 1 and Fig. 2, and in conjunction with the embodiments in diffusion and furbishing sheet piece rate measuring and calculating list data can draw, the silicon polished of heavily doped diffusion layer improves about 40% by the latter's flow process slice number, can be calculated in conjunction with the raw material in process and process costs, adopt the polished silicon wafer after this method process can reduce about 20% relative to the cost of common process, therefore, this invention technology can reduce the silicon polished processing cost of recycling diffusion layer, increases silicon polished production capacity.
Φ 125mm heavy doping silicon single crystal rod is selected in above-described embodiment, it should be noted that in practical operation, adopt the method for cutting silicon chips in the present invention all described silicon chip can be divided into two for Φ 76mm-150mm size silicon chip, to reach the silicon polished processing cost reducing recycling diffusion layer, increase the object of silicon polished production capacity.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a secondary cut method for silicon chip, described cutting method adopts conventional multi-line cutting method, it is characterized in that, comprises the steps:
(1) locating slot cutting: before a cutting process, first cut secondary cut edge of a knife locating slot on silicon single crystal, its object is used for secondary cut centering, then once cuts silicon single crystal;
(2) silicon chip is fixed: obtained treating secondary cut silicon chip after spreading thinning sorting by the silicon chip after once cutting, to treat that secondary cut silicon wafer side-by-side equidistantly or is closely fixed on silicon chip and cuts in fixture, and keep described locating slot in the same horizontal line, form an one-piece machine member and fix with glue;
(3) positional dissection: the one-piece machine member bondd in step (2) is fixed on multi-line cutting machine by resin streak or is directly fixed on multi-line cutting machine, line of cut is aimed at one by one and is fixed on the locating slot that silicon chip cuts the silicon chip in fixture and carries out centering location, carry out cutting silicon chip is divided into two along this locating slot after accurate positioning.
2. the secondary cut method of silicon chip according to claim 1, it is characterized in that: treat that secondary cut silicon wafer side-by-side is equidistantly fixed on silicon chip and cuts in fixture in described step (3), the centering locate mode of employing is two centering locate modes that the gauze gap of the silicon chip gap alignment cutting steel wire of being cut by this silicon chip in fixture and silicon chip locating slot center line aim at line of cut.
3. the secondary cut method of silicon chip according to claim 1, it is characterized in that: treating closely to overlay silicon chip by secondary cut silicon wafer side-by-side in described step (3), to cut in fixture bonding fixing, and the centering locate mode of employing is the four-way location survey mode of level and vertical direction.
4. the secondary cut method of silicon chip according to claim 1, is characterized in that: described clamping slot depth is 1-2mm.
5. the secondary cut method of the silicon chip according to any one of claim 1-4, it is characterized in that: the secondary cut technology of described silicon chip, for the secondary cut technique after silicon chip diffusion, carries out diffusion thinning again after the silicon chip after DIFFUSION TREATMENT being carried out secondary cut.
6. the secondary cut method of silicon chip according to claim 1, it is characterized in that: it is that silicon chip cuts mould that described silicon chip cuts fixture, and treat that secondary cut silicon wafer side-by-side is equidistantly fixed described silicon chip and cut in mould, it is the rectangular structure open up and down surrounded by two pieces of parallel side plates and two pieces of parallel attachment plates that wherein said silicon chip cuts mould, the inner side of described side plate is evenly distributed with some grooves, and the groove one_to_one corresponding on two pieces of parallel side plates, the width of described groove is consistent with silicon chip width to be cut, for fixing described silicon chip to be cut.
7. the secondary cut method of silicon chip according to claim 6, is characterized in that: described in cut mould cross section be " H " shape structure; Height h=silicon chip diameter+(2-3) mm of described mould; Described mould inner groovy gap width L=silicon wafer thickness+(1-2) mm.
8. the secondary cut method of silicon chip according to claim 6, is characterized in that: it is insulation board material composition that described silicon chip cuts mould.
9. the secondary cut method of silicon chip according to claim 1, it is characterized in that: described silicon chip is cut fixture and comprised a right angle platform and a gravity briquetting, and treat that secondary cut silicon chip closely overlays on described right angle platform, described gravity briquetting is positioned at described inclination right angle platform tail end, for compressing silicon chip.
10. the secondary cut method of silicon chip according to claim 1, is characterized in that: described right angle platform is slant setting when fixing silicon chip.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107030911A (en) * | 2017-05-15 | 2017-08-11 | 天津市环欧半导体材料技术有限公司 | The level measurement method and frock of a kind of use multi-line cutting machine secondary cut silicon chip |
| CN111037766A (en) * | 2019-12-19 | 2020-04-21 | 江苏高照新能源发展有限公司 | Manufacturing method of low-cost monocrystalline silicon wafer for photovoltaic cell |
| CN113601738A (en) * | 2021-07-16 | 2021-11-05 | 宇泽半导体(云南)有限公司 | Processing method for processing rectangular photovoltaic cell silicon wafer by using native single crystal silicon rod |
| CN113681736A (en) * | 2021-07-30 | 2021-11-23 | 隆基绿能科技股份有限公司 | Silicon rod processing method |
| CN113698083A (en) * | 2021-09-26 | 2021-11-26 | 浙江美迪凯光学半导体有限公司 | Thick glass accurate positioning cutting process |
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| CN107030911A (en) * | 2017-05-15 | 2017-08-11 | 天津市环欧半导体材料技术有限公司 | The level measurement method and frock of a kind of use multi-line cutting machine secondary cut silicon chip |
| CN111037766A (en) * | 2019-12-19 | 2020-04-21 | 江苏高照新能源发展有限公司 | Manufacturing method of low-cost monocrystalline silicon wafer for photovoltaic cell |
| CN113601738A (en) * | 2021-07-16 | 2021-11-05 | 宇泽半导体(云南)有限公司 | Processing method for processing rectangular photovoltaic cell silicon wafer by using native single crystal silicon rod |
| CN113681736A (en) * | 2021-07-30 | 2021-11-23 | 隆基绿能科技股份有限公司 | Silicon rod processing method |
| CN113698083A (en) * | 2021-09-26 | 2021-11-26 | 浙江美迪凯光学半导体有限公司 | Thick glass accurate positioning cutting process |
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