CN105235079A - Silicon wafer slitting die of multi-wire sawing machine - Google Patents
Silicon wafer slitting die of multi-wire sawing machine Download PDFInfo
- Publication number
- CN105235079A CN105235079A CN201510680069.8A CN201510680069A CN105235079A CN 105235079 A CN105235079 A CN 105235079A CN 201510680069 A CN201510680069 A CN 201510680069A CN 105235079 A CN105235079 A CN 105235079A
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- China
- Prior art keywords
- silicon chip
- mould
- cut
- cutting machine
- line cutting
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 66
- 239000010703 silicon Substances 0.000 title claims abstract description 66
- 238000005520 cutting process Methods 0.000 claims abstract description 39
- 238000009413 insulation Methods 0.000 claims description 3
- 239000011347 resin Substances 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 abstract 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention provides a silicon wafer slitting die of a multi-wire sawing machine. The silicon wafer slitting die comprises two parallel side plates and two parallel connecting plates arranged between the two side plates. A vertically-opened cuboid structure is defined by the side plates and the parallel connecting plates. A plurality of grooves are evenly distributed in the inner sides of the side plates, and the grooves in the two parallel side plates are in one-to-one correspondence. The width of the grooves is consistent with the width of silicon wafers to be cut, and the grooves are used for fixing the silicon wafers to be cut. Guiding and extending design is achieved at the upper end of the slitting die so that the cutting precision of the multi-wire sawing machine can be improved; and due to a resin streak clearance structure at the lower end of the slitting die, the bonding precision can be better ensured.
Description
Technical field
The present invention relates to multi-wire saw and divide section field, specifically a kind of multi-line cutting machine by cutting silicon wafer again by the Design of Dies of multiple silicon chip radially cutting method.
Background technology
Current market, super large-scale integration great majority Czochralski silicon wafer is as backing material, the ever-larger diameters of silicon chip and high surface smoothness are the Main way that it develops, and multi-wire saw technology has greater advantage in raising evenness of silicon wafer and surface geometry parameter compared with miscellaneous equipment (inside diameter slicer etc.).In multi-wire saw, cut into certain thickness silicon chip by multi-line cutting machine is disposable in the past, thus realize the batch cutting of silicon chip.And in actual applications, need a large amount of silicon chip again to cut to be divided into two, to adapt to the specific use of silicon chip, this is difficult to realize in current multi-wire saw technology.
Summary of the invention
In view of this, the present invention is intended to propose a kind of multi-line cutting machine silicon chip and cuts mould, to solve prior art Problems existing.
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of multi-line cutting machine silicon chip cuts mould, described silicon chip is cut mould and is comprised two pieces of parallel side plates and be arranged at two pieces of parallel attachment plates between biside plate, described side plate and described parallel attachment plates surround about one rectangular structure opened, the inner side of described side plate is evenly distributed with some grooves, and the groove one_to_one corresponding on two pieces of parallel side plates, the width of described groove is consistent with silicon chip width to be cut, for fixing described silicon chip to be cut.
Further, the cross section of described connecting plate is " H " shape structure.
Further, height h=silicon chip diameter+(2-3) mm of described mould.
Further, described mould inner groovy gap width L=silicon wafer thickness+(1-2) mm.
Further, described side plate and described connecting plate are insulation board.
Relative to prior art, multi-line cutting machine silicon chip of the present invention is cut mould and is had following advantage:
For better the front precision of silicon chip cutting is cut in location, while ensureing bonding 90 ° of silicon chip, mould adopts between silicon chip and is separated fixed form, this mode can avoid silicon chip to merge the cumulative errors produced, and simultaneously mould upper end of cutting of the present invention has guiding extending design and can promote multi-line cutting machine and enter cutter precision; The resin streak gap structure of lower end can ensure adhesive reinforcement better.The one-piece machine member of bonding this structure of employing is fixed on multi-line cutting machine, adopt two centering modes of the gauze gap of the groove gap alignment cutting steel wire of this mould, silicon chip locating slot aligning line of cut, thin silicon wafer thickness being less than 1-2mm carries out the cutting that is divided into two, and cuts rear silicon chip TTV and thickness scattered error and a cutting silicon wafer very nearly the same.
Accompanying drawing explanation
The accompanying drawing forming a part of the present invention is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 cuts the perspective view of mould for the multi-line cutting machine silicon chip described in the embodiment of the present invention;
Fig. 2 cuts the left view of mould for the multi-line cutting machine silicon chip described in the embodiment of the present invention;
Fig. 3 cuts the using state figure of mould for the multi-line cutting machine silicon chip described in the embodiment of the present invention;
Fig. 4 cuts the working state schematic representation of mould for the multi-line cutting machine silicon chip described in the embodiment of the present invention.
Detailed description of the invention
It should be noted that, when not conflicting, the embodiment in the present invention and the feature in embodiment can combine mutually.
Below with reference to the accompanying drawings and describe the present invention in detail in conjunction with the embodiments.
A kind of multi-line cutting machine silicon chip cuts mould, as illustrated in fig. 1 and 2, described silicon chip is cut mould 2 and is comprised two pieces of parallel side plates 21 and be arranged at two pieces of parallel attachment plates 22 between biside plate, described side plate 21 surrounds about one rectangular structure opened with described parallel attachment plates 22, the inner side of described side plate 21 is evenly distributed with some grooves 1, and groove 1 one_to_one corresponding on two pieces of parallel side plates, the width of described groove 1 is consistent with silicon chip 3 width to be cut, for fixing described silicon chip 3 to be cut.
Described top of cutting mould possesses the progradation of silicon chip guiding, particularly, the cross section of described connecting plate 22 is " H " shape structure, and this structure can ensure that the effect of guiding extension can be played for cutting steel wire in the upper end of mould 2, can promote multi-line cutting machine and enter cutter precision.
Meanwhile, in order to better fix silicon chip 3 to be cut, height h=silicon chip diameter+(2-3) mm of described mould 2; Described mould 2 inner groovy gap width L=silicon wafer thickness+(1-2) mm.
In order to prevent the destruction for silicon chip performance in cutting process, described side plate and described connecting plate are insulation board.
As shown in Figure 3,4, multi-line cutting machine silicon chip of the present invention cut the duty of mould and process as follows:
To treat that silicon chip is upwards placed in this invention mould 2 by the locating slot of the silicon chip 3 of secondary cut, and fix formation one-piece machine member with glue, then one-piece machine member is bonded on resin streak 4 and completes silicon chip integral adhesive to be cut.For better the front precision of silicon chip cutting is cut in location, while ensureing bonding 90 ° of silicon chip, mould adopts between silicon chip and is separated fixed form, this mode can avoid silicon chip to merge the cumulative errors produced, and simultaneously mould upper end of cutting of the present invention has guiding extending design and can promote multi-line cutting machine and enter cutter precision; Resin streak 4 gap structure of lower end can ensure adhesive reinforcement better.The one-piece machine member of bonding this structure of employing is fixed on the material seat 5 of multi-line cutting machine, adopt two centering modes of the gauze gap of the groove gap alignment cutting steel wire 6 of this mould, silicon chip locating slot aligning line of cut, thin silicon wafer thickness being less than 1-2mm carries out the cutting that is divided into two, and cuts rear silicon chip TTV and thickness scattered error and a cutting silicon wafer very nearly the same.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. a multi-line cutting machine silicon chip cuts mould, it is characterized in that: described silicon chip is cut mould and comprised two pieces of parallel side plates and be arranged at two pieces of parallel attachment plates between biside plate, described side plate and described parallel attachment plates surround about one rectangular structure opened, the inner side of described side plate is evenly distributed with some grooves, and the groove one_to_one corresponding on two pieces of parallel side plates, the width of described groove is consistent with silicon chip width to be cut, for fixing described silicon chip to be cut.
2. multi-line cutting machine silicon chip according to claim 1 cuts mould, it is characterized in that: the cross section of described connecting plate is " H " shape structure.
3. multi-line cutting machine silicon chip according to claim 1 cuts mould, it is characterized in that: height h=silicon chip diameter+(2-3) mm of described mould.
4. the multi-line cutting machine silicon chip according to any one of claim 1-3 cuts mould, it is characterized in that: described mould inner groovy gap width L=silicon wafer thickness+(1-2) mm.
5. multi-line cutting machine silicon chip according to claim 1 cuts mould, it is characterized in that: described side plate and described connecting plate are insulation board.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510680069.8A CN105235079A (en) | 2015-10-19 | 2015-10-19 | Silicon wafer slitting die of multi-wire sawing machine |
Applications Claiming Priority (1)
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CN201510680069.8A CN105235079A (en) | 2015-10-19 | 2015-10-19 | Silicon wafer slitting die of multi-wire sawing machine |
Publications (1)
Publication Number | Publication Date |
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CN105235079A true CN105235079A (en) | 2016-01-13 |
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Family Applications (1)
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CN201510680069.8A Pending CN105235079A (en) | 2015-10-19 | 2015-10-19 | Silicon wafer slitting die of multi-wire sawing machine |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107030911A (en) * | 2017-05-15 | 2017-08-11 | 天津市环欧半导体材料技术有限公司 | Horizontal measurement method and tool for secondary cutting of silicon wafer by using multi-wire cutting machine |
CN115741162A (en) * | 2022-11-30 | 2023-03-07 | 珠海菲高科技股份有限公司 | Soft metal multi-wire cutting clamp and process |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07169722A (en) * | 1993-12-16 | 1995-07-04 | Sumitomo Sitix Corp | Manufacture of semiconductor wafer |
CN1564730A (en) * | 2001-08-07 | 2005-01-12 | 硅绝缘技术公司 | Apparatus and method for splitting substrates |
CN101186082A (en) * | 2007-12-21 | 2008-05-28 | 宁波立立电子股份有限公司 | Method for using multi lane cutting machine to cut a plurality of thin silicon chip along radial direction once time |
US20080223429A1 (en) * | 2004-08-09 | 2008-09-18 | The Australian National University | Solar Cell (Sliver) Sub-Module Formation |
CN104097269A (en) * | 2013-09-30 | 2014-10-15 | 凡登(江苏)新型材料有限公司 | Guide wheel with customized groove type for multi-line cutting and preparation method thereof |
-
2015
- 2015-10-19 CN CN201510680069.8A patent/CN105235079A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07169722A (en) * | 1993-12-16 | 1995-07-04 | Sumitomo Sitix Corp | Manufacture of semiconductor wafer |
CN1564730A (en) * | 2001-08-07 | 2005-01-12 | 硅绝缘技术公司 | Apparatus and method for splitting substrates |
US20080223429A1 (en) * | 2004-08-09 | 2008-09-18 | The Australian National University | Solar Cell (Sliver) Sub-Module Formation |
CN101186082A (en) * | 2007-12-21 | 2008-05-28 | 宁波立立电子股份有限公司 | Method for using multi lane cutting machine to cut a plurality of thin silicon chip along radial direction once time |
CN104097269A (en) * | 2013-09-30 | 2014-10-15 | 凡登(江苏)新型材料有限公司 | Guide wheel with customized groove type for multi-line cutting and preparation method thereof |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107030911A (en) * | 2017-05-15 | 2017-08-11 | 天津市环欧半导体材料技术有限公司 | Horizontal measurement method and tool for secondary cutting of silicon wafer by using multi-wire cutting machine |
CN115741162A (en) * | 2022-11-30 | 2023-03-07 | 珠海菲高科技股份有限公司 | Soft metal multi-wire cutting clamp and process |
CN115741162B (en) * | 2022-11-30 | 2023-09-29 | 珠海菲高科技股份有限公司 | Soft metal multi-wire cutting clamp and process |
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TA01 | Transfer of patent application right |
Effective date of registration: 20181206 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 inside. Applicant after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Applicant before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160113 |
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