CN105374888A - 一种太阳能电池的低温银浆栅线的制备方法及电池和组件 - Google Patents

一种太阳能电池的低温银浆栅线的制备方法及电池和组件 Download PDF

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CN105374888A
CN105374888A CN201510822560.XA CN201510822560A CN105374888A CN 105374888 A CN105374888 A CN 105374888A CN 201510822560 A CN201510822560 A CN 201510822560A CN 105374888 A CN105374888 A CN 105374888A
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李宝胜
刘婷婷
蔡明�
李立伟
孟原
郭铁
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ENN Solar Energy Co Ltd
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Abstract

本发明公开了一种硅异质结太阳能电池的低温银浆栅线的制备方法，包括：S1、使用低温银浆在硅异质结太阳能电池上印刷栅线；S2、对印刷后的栅线进行烘干；S3、使用紫外光对烘干后的栅线进行照射，使得栅线中的有机溶剂完全挥发。通过紫外光照射栅线，完全挥发其中含有的有机溶剂，从而避免太阳能光伏发电运行过程中有机溶剂对太阳能电池造成的污染，降低其导电性能，因此可以有效保持太阳能电池组件的发电效率。

Description

一种太阳能电池的低温银浆栅线的制备方法及电池和组件
技术领域
本发明涉及太阳能电池生产技术领域，特别是涉及硅异质结太阳能电池的低温银浆栅线的制备方法及其电池和组件。
背景技术
硅异质结太阳能电池是一种利用晶体硅基板和非晶硅薄膜工艺制成的混合型电池，具有转换效率高、工艺流程简单、温度系数低等优势，受到人们的广泛关注。现有硅异质结太阳能电池的生产工艺包括：清洗、制绒、正面沉积、背面沉积、TCO溅射沉积、栅极电极丝网印刷、退火等，其中栅线电极是采用丝网印刷技术印刷主栅线和细栅线形成。由于硅异质结太阳能电池内部的非晶硅薄膜层经受不了高温的处理，栅线的印刷工艺需要在低温环境中进行，因此需要采用低温银浆作为栅线电极的原材料，并且选择相对低温的条件，一般温度低于250℃，对印刷的低温银浆栅线进行烘干，由于低温银浆是由高纯度的金属银的微粒、粘合剂、溶剂、助剂所组成的一种机械混和物的粘稠状的浆料，低温烘干的处理方式使得低温银浆栅线中存在未完全挥发的有机溶剂。
现有处理方法制得的低温银浆栅线中存在未完全挥发的有机溶剂，采用上述方法制得的低温银浆栅线会被用来制备太阳能电池，然后被封装成太阳能光伏组件，继而安装到光伏电站系统中。当光伏电站系统运行时，太阳能光伏组件需要吸收太阳光转化成电力，在光照的过程中，太阳紫外线就会照射到太阳能电池中的低温银浆栅线，使得低温银浆栅线中未完全挥发的有机溶剂挥发出来并渗透到太阳能光伏组件中，进而使得太阳能光伏组件中的相关金属部件发生电化学腐蚀，从而影响太阳能电池组件的发电效率。
因此，如何使低温银浆栅线中的有机溶剂挥发完全以提高太阳能电池组件的发电效率显得非常重要。
发明内容
本发明的目的是提供一种硅异质结太阳能电池的低温银浆栅线的制备方法，以使得低温银浆栅线中的有机溶剂挥发完全，避免使用中有机溶剂对太阳能电池的污染，从而提高太阳能电池组件的发电效率。
本发明实施例提供了一种硅异质结太阳能电池的低温银浆栅线的制备方法，包括：
S1、使用低温银浆在硅异质结太阳能电池上印刷栅线；
S2、对印刷后的栅线进行烘干；
S3、使用紫外光对烘干后的栅线进行照射，使得栅线中的有机溶剂完全挥发。
可选的，紫外光的波长范围为200nm至450nm，照射时间为3至30分钟。
较优的，紫外光的波长范围为254nm至365nm。
可选的，紫外光采用管状发光装置产生。
较优的，管状发光装置的长度等于或大于硅异质结太阳能电池的长度，管状发光装置与硅异质结太阳能电池的距离在100mm～500mm；更优的，管状发光装置与硅异质结太阳能电池的距离为200mm。
本发明实施例还提供了一种硅异质结太阳能电池的制备方法，包含上述任意的该低温银浆栅线的制备方法。
本发明实施例还提供了一种硅异质结太阳能电池，栅线采用上述任意的低温银浆栅线的制备方法进行制备。
本发明实施例还提供了一种太阳能组件，包含上述的硅异质结太阳能电池。
在本发明实施例的技术方案中，改进了异质结太阳能电池低温银浆栅线的制备方法，在完成栅线烘干后增加紫外光照射，使得银浆栅线中未完全挥发的有机溶剂完全挥发，从而避免太阳能光伏组件在运行过程中因为挥发的有机溶剂对其它部分产生电化学腐蚀，从而改善了太阳能光伏组件的发电效率。
附图说明
图1为本发明一实施例的硅异质结太阳能电池的低温银浆栅线的制备方法；
图2为本发明另一实施例的紫外光照射栅线示意图。
附图标记：
1-管状发光装置；
2-主栅线；
3-细栅线；
4-电池；
具体实施方式
为了避免太阳能光伏组件在运行过程中因为挥发的银浆栅线中的有机溶剂对其它部分产生电化学腐蚀，从而影响了太阳能光伏组件的发电效率，本发明对栅线采用了新的制备方法。为使发明的目的、技术方案和优点更加清楚，以下举实施例对本发明作进一步详细说明。
如图1所示，本发明一实施例提供了一种硅异质结太阳能电池的低温银浆栅线的制备方法，包括：
S1、使用低温银浆在硅异质结太阳能电池上印刷栅线；
S2、对印刷后的栅线进行烘干；
S3、使用紫外光对烘干后的栅线进行照射，使得栅线中的有机溶剂完全挥发。
紫外光的波长范围为200nm至450nm，照射时间为3至30分钟。较优的，紫外光的波长范围为254nm至365nm。
如图2所示，紫外光可以采用管状发光装置1产生，比如紫外光管式发光装置，管状发光装置1的长度等于或大于硅异质结太阳能电池的长度，其与硅异质结太阳能电池的距离在100mm～500mm，较优的距离为200mm。
照射设备包括支架、管状发光装置1、控制单元，电池传送装置包括传送带，其中电池传送装置安装于支架下方，管状发光装置1安装于支架上，控制单元与管状发光装置1相连并控制开启、关闭，并对管状发光装置1的光波长范围、照射时间、照射范围进行调节，以达到实时监控和自动调节照射的目的。
需要照射时，控制单元开启管状发光装置1，并根据被处理栅线类型设定相关参数，光波长范围、照射时间、照射范围等，电池4(比如太阳能电池)可以依次放置在移动的传送装带上，管状发光装置1对主栅线2和细栅线3完成照射后，依次通过。
本发明实施例还提供了一种硅异质结太阳能电池的制备方法，包含上述该低温银浆栅线的制备方法
本发明实施例还提供了一种硅异质结太阳能电池，栅线采用上述低温银浆栅线的制备方法进行制备。
本发明实施例还提供了一种太阳能组件，包含上述的硅异质结太阳能电池。
在本发明实施例的技术方案中，对烘干后的栅线进行紫外光照射，使得栅线中的有机溶剂完全挥发，从而在太阳能电池组件运行过程中不会因为太阳光照射，导致栅线中的有机溶剂挥发，对太阳能电池组件产生电化学腐蚀，降低导电性能。因此可以有效的长时间保证太阳能光伏组件的发电效率。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (9)

1.一种硅异质结太阳能电池的低温银浆栅线的制备方法，其特征在于：
S1、使用低温银浆在所述硅异质结太阳能电池上印刷栅线；
S2、对印刷后的所述栅线进行烘干；
S3、使用紫外光对烘干后的所述栅线进行照射，使得所述栅线中的有机溶剂完全挥发。
2.如权利要求1所述的制备方法，其特征在于：所述紫外光的波长范围为200nm至450nm，照射时间为3至30分钟。
3.如权利要求2所述的制备方法，其特征在于：所述紫外光的波长范围为254nm至365nm。
4.如权利要求1所述的制备方法，其特征在于：所述紫外光采用管状发光装置产生。
5.如权利要求4所述的制备方法，其特征在于：所述管状发光装置的长度等于或大于所述硅异质结太阳能电池的长度，所述管状发光装置与所述硅异质结太阳能电池的距离在100mm～500mm。
6.如权利要求5所述的制备方法，其特征在于：所述管状发光装置与所述硅异质结太阳能电池的距离为200mm。
7.一种硅异质结太阳能电池的制备方法，其特征在于，包含如权利要求1至6任意所述的低温银浆栅线的制备方法。
8.一种硅异质结太阳能电池，其特征在于，栅线采用如权利要求1至6任意所述的低温银浆栅线的制备方法进行制备。
9.一种太阳能组件，其特征在于，包含如权利要求8所述的硅异质结太阳能电池。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110690299A (zh) * 2019-10-21 2020-01-14 华南理工大学 光伏太阳能电池电极栅线原位二次印刷装置及方法
CN112103366A (zh) * 2019-05-31 2020-12-18 中国科学院上海高等研究院 硅基异质结太阳电池、光伏组件及制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1433052A (zh) * 2002-01-16 2003-07-30 松下电器产业株式会社 图案形成方法
WO2010089624A1 (en) * 2009-02-06 2010-08-12 Kuznicki Zbigniew T Methods for producing photovoltaic material and device able to exploit high energy photons
CN102136517A (zh) * 2011-02-21 2011-07-27 芜湖明远新能源科技有限公司 一种晶体硅异质结叠层太阳电池及其制作方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1433052A (zh) * 2002-01-16 2003-07-30 松下电器产业株式会社 图案形成方法
WO2010089624A1 (en) * 2009-02-06 2010-08-12 Kuznicki Zbigniew T Methods for producing photovoltaic material and device able to exploit high energy photons
CN102136517A (zh) * 2011-02-21 2011-07-27 芜湖明远新能源科技有限公司 一种晶体硅异质结叠层太阳电池及其制作方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112103366A (zh) * 2019-05-31 2020-12-18 中国科学院上海高等研究院 硅基异质结太阳电池、光伏组件及制备方法
CN110690299A (zh) * 2019-10-21 2020-01-14 华南理工大学 光伏太阳能电池电极栅线原位二次印刷装置及方法

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