CN105374725A - Joint device, joint system, and joint method - Google Patents

Joint device, joint system, and joint method Download PDF

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Publication number
CN105374725A
CN105374725A CN201510484914.4A CN201510484914A CN105374725A CN 105374725 A CN105374725 A CN 105374725A CN 201510484914 A CN201510484914 A CN 201510484914A CN 105374725 A CN105374725 A CN 105374725A
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China
Prior art keywords
substrate
wafer
area
maintaining part
sucker
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Granted
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CN201510484914.4A
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Chinese (zh)
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CN105374725B (en
Inventor
杉原绅太郎
真锅英二
古家元
三村勇之
大森阳介
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to CN201910554608.1A priority Critical patent/CN110416142B/en
Publication of CN105374725A publication Critical patent/CN105374725A/en
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Publication of CN105374725B publication Critical patent/CN105374725B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68309—Auxiliary support including alignment aids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

The invention provides a joint device, a joint system, and a joint method. The joint device (41) comprises an upper sucking disc (140), which is used to absorb an upper wafer (WU) through vacuum so as to maintain the upper wafer on the lower surface; and a lower sucking disc (141), which is arranged below the upper sucking disc (140) and is used to absorb a lower wafer (WL) through vacuum so as to maintain the lower wafer (WL) on the upper surface. The lower sucking disc (141) has a main body (190) that is used to absorb the lower wafer (WL) through vacuum and a plurality of pins (191) that are arranged on the main body (190) and contact the back of the lower wafer (WL). The top ends of the pins (191a) arranged on the center of the main body (190) are higher than the top ends of the pins (191b) arranged on the periphery of the main body (190).

Description

Coupling device, mating system and joint method
Technical field
The present invention relates to the coupling device for being engaged with each other by substrate, there is the mating system of this coupling device and employ the joint method of this coupling device.
Background technology
In recent years, the highly integrated development of semiconductor device.When configuring highly integrated multiple semiconductor device and connect these semiconductor device with wiring and carry out commercialization in horizontal plane, can worry that the resistance causing because length of arrangement wire increases connecting up becomes large and wiring delay becomes large situation.
Therefore, propose there is the scheme using and semiconductor device is carried out to three-dimensional laminated three-dimensional integration technology.In this three-dimensional integration technology, such as, example mating system as described in Patent Document 1 carries out the joint of two semiconductor crystal wafers (hereinafter referred to as " wafer ").Such as, mating system comprises: surface modification device, and it is for the modifying surface that will be engaged to wafer; Surface hydrophilic gasifying device, it is for making the surface hydrophilic utilizing this surface modification device modified of wafer; And coupling device, it is for being engaged with each other the wafer utilizing this surface hydrophilic gasifying device to carry out surface hydrophilic.In this mating system, in surface modification device, plasma treatment is carried out to the surface of wafer and to this modifying surface, then in surface hydrophilic gasifying device, pure water supplied to the surface of wafer and make this surface hydrophilic, afterwards, in coupling device, utilize Van der Waals force and Hydrogenbond (molecular separating force) that wafer is engaged with each other.
Described coupling device has: upper sucker, and it is for keeping a wafer (hereinafter referred to as " upper wafer " at lower surface.); Lower sucker, it is located at the below of sucker, for keeping another wafer (hereinafter referred to as " lower wafer " at upper surface.); And promotion component, it is located at sucker, for pressing the central part of upper wafer.In this coupling device, by by under the state that is oppositely disposed of the upper wafer that keeps of sucker and the lower wafer that kept by lower sucker, utilize and promote the central part of component to the central part of upper wafer and lower wafer and press and make both abut against, afterwards, under the state that the central part of wafer and the central part of lower wafer abut against on making, from the central part of upper wafer, perimembranous goes upper wafer and lower wafer to engage successively toward the outside.
Patent documentation 1: Japanese Patent No. 5538613 publication
Summary of the invention
the problem that invention will solve
In addition, in the method described in patent documentation 1, promote component owing to utilizing under the state that sucker on utilizing keeps the peripheral part of wafer the central part side of the central part of wafer downward wafer is declined, therefore, on this, wafer stretches out in the mode of protruding warpage downwards.So, when making wafer be engaged with each other, the situation that in existence, wafer and lower wafer engage in the mode staggered in the horizontal direction.Such as, at the wafer engaged (hereinafter referred to as " coincidence wafer ".) in, even if the central part of the central part of upper wafer and lower wafer is consistent, also dislocation (convergent-divergent) can be produced in the horizontal direction at the peripheral part of upper wafer and the peripheral part of lower wafer.
But, in the mating system described in patent documentation 1, do not consider the dislocation in the horizontal direction suppressing described coincidence wafer.Thus, in the joining process between wafer in the past, there is room for improvement.
The present invention makes in view of this point, its object is to, and regulates the substrate that will be engaged horizontal direction location-appropriate each other and suitably carries out this substrate joining process each other.
for the scheme of dealing with problems
In order to realize described object, the invention provides a kind of coupling device, it, for being engaged with each other by substrate, is characterized in that, this coupling device comprises: the 1st maintaining part, and the 1st substrate adsorption is held in lower surface for carrying out vacuum attraction to the 1st substrate by it; And the 2nd maintaining part, it is located at the below of described 1st maintaining part, 2nd substrate adsorption is held in upper surface for carrying out vacuum attraction to the 2nd substrate, described 2nd maintaining part there is main part for carrying out vacuum attraction to the 2nd substrate and be located at described main part and and multiple pins of touching of the back face of the 2nd substrate, the apical position being located at the described pin of the central part of described main part is higher than the apical position of described pin of peripheral part being located at described main part.
Adopt the present invention, the central part of the upper surface of the 2nd maintaining part is given prominence to than the peripheral part of the upper surface of the 2nd maintaining part, and the 2nd substrate is kept along the upper surface of the 2nd maintaining part.That is, the central part of the 2nd substrate kept by the 2nd maintaining part is also given prominence to than the peripheral part of the 2nd substrate.In this case, such as promote component and press the central part of the 1st substrate even if utilize and the 1st substrate is stretched out in the mode of protruding ground warpage downwards, the 2nd substrate is also to stretch out in the mode of protruding ground warpage upward with the roughly laterally zygomorphic shape of the 1st substrate.Therefore, it is possible to suppress the dislocation in the horizontal direction of the 1st substrate and the 2nd substrate.
In addition, as mentioned above, because the 2nd substrate is held in the 2nd maintaining part in mode protruding upward, therefore, it is possible to utilize promotion component to make the central part of the central part of the 1st substrate and the 2nd substrate reliably abut.Further, afterwards, can under the state making the central part of the central part of the 1st substrate and the 2nd substrate abut against from the central part of the 1st substrate toward the outside perimembranous go the 1st substrate and the 2nd substrate to engage successively.In this case, along with substrate each other from central part toward the outside perimembranous go and abut successively, the air between this substrate can be made reliably to flow out to peripheral part from central part, thus the coincidence wafer after engaging can be suppressed to produce space.
As mentioned above, adopt the present invention, can regulate the location-appropriate of the horizontal direction of the 1st substrate and the 2nd substrate and suppress coincidence substrate to produce space, thus suitably can carry out the joining process of the 1st substrate and the 2nd substrate.
Also can be, described main part is divided into inside region and the exterior lateral area of concentric circles, the apical position being located at described multiple pin of described inside region goes and step-down towards radial outside, the apical position being located at described multiple pin of described exterior lateral area goes and step-down towards radial outside, the change relative to radial distance being less than the apical position of multiple pin described in described exterior lateral area relative to the change of radial distance of the apical position of multiple pin described in described inside region.
Also can be that this coupling device also comprises promotion component, described 1st maintaining part be located at by this promotion component, for pressing the central part of the 1st substrate.
Also can be that described main part is divided into the territory, multiple area in which the goods are in great demand in concentric circles, in territory, described multiple area in which the goods are in great demand, the interval of the described multiple pin in the territory, area in which the goods are in great demand of inner side be less than the interval of the described multiple pin in the territory, area in which the goods are in great demand in outside.
Also can be, described 2nd maintaining part also has rib, this rib is concentric circles and ring-type is located at described main part and from this main part projection, and described 2nd maintaining part can be set to carry out vacuum attraction to the 2nd substrate in each region in the distributing area in the outside of distributing area in the inner side of described rib and described rib.
Also can be that described 2nd maintaining part also has the thermoregulation mechanism for regulating the temperature of the 2nd substrate kept by the 2nd maintaining part.
Another technical scheme of the present invention provides a kind of mating system, and it has described coupling device, it is characterized in that, this mating system comprises: treating stations, and it has described coupling device; And input/output station, it can possess multiple the 1st substrates, multiple the 2nd substrates and coincidence substrate that multiple are engaged by the 1st substrate and the 2nd substrate and respectively relative to described treating stations input and output the 1st substrate, the 2nd substrate and coincidence substrate, described treating stations comprises: surface modification device, and it is for the modifying surface that will be engaged to the 1st substrate and the 2nd substrate; Surface hydrophilic gasifying device, it carries out modified surface hydrophilic for making the described surface modification device that utilizes of the 1st substrate and the 2nd substrate; And conveying device, it is for carrying the 1st substrate, the 2nd substrate and coincidence substrate relative to described surface modification device, described surface hydrophilic gasifying device and described coupling device, in described coupling device, carry out the 1st substrate of surface hydrophilic by utilizing described surface hydrophilic gasifying device and the 2nd substrate is engaged with each other.
Another technical scheme of the present invention provides a kind of joint method, in this joint method, use coupling device to be engaged with each other by substrate, it is characterized in that, this coupling device comprises: the 1st maintaining part, and the 1st substrate adsorption is held in lower surface for carrying out vacuum attraction to the 1st substrate by it; 2nd maintaining part, it is located at the below of described 1st maintaining part, the 2nd substrate adsorption is held in upper surface for carrying out vacuum attraction to the 2nd substrate; And promotion component, it is located at described 1st maintaining part, for pressing the central part of the 1st substrate, described 2nd maintaining part there is main part for carrying out vacuum attraction to the 2nd substrate and be located at described main part and and multiple pins of touching of the back face of the 2nd substrate, the apical position being located at the described pin of the central part of described main part is higher than the apical position of described pin of peripheral part being located at described main part, described joint method comprises following operation: the 1st keeps operation, keep, in operation, utilizing described 1st maintaining part to keep the 1st substrate the 1st; 2nd keeps operation, keeps in operation the 2nd, utilizes described 2nd maintaining part to keep the 2nd substrate in the mode making the central part of the 2nd substrate and give prominence to upward; Arrangement step afterwards, in this arrangement step, by the 1st substrate kept by described 1st maintaining part and the 2nd substrate relative configuration kept by described 2nd maintaining part; Pressing process afterwards, in this pressing process, makes described promotion component decline and utilizes the central part of this promotion component to the central part of the 1st substrate and the 2nd substrate press and the central part of the central part of the 1st substrate and the 2nd substrate is abutted against; And bonding process afterwards, in this bonding process, under the state making the central part of the central part of the 1st substrate and the 2nd substrate abut against, stop utilizing described 1st maintaining part to carry out vacuum attraction to the 1st substrate, from the central part of the 1st substrate toward the outside perimembranous go the 1st substrate and the 2nd substrate to engage successively.
Also can be, described main part is divided into inside region and the exterior lateral area of concentric circles, the apical position being located at described multiple pin of described inside region goes and step-down towards radial outside, the apical position being located at described multiple pin of described exterior lateral area goes and step-down towards radial outside, the change relative to radial distance being less than the apical position of multiple pin described in described exterior lateral area relative to the change of radial distance of the apical position of multiple pin described in described inside region, keep in operation the described 2nd, surface along described 2nd maintaining part keeps the 2nd substrate.
Also can be, described main part is divided into the territory, multiple area in which the goods are in great demand of concentric circles, in territory, described multiple area in which the goods are in great demand, the interval of the described multiple pin in the territory, area in which the goods are in great demand of inner side is less than the interval of the described multiple pin in the territory, area in which the goods are in great demand in outside, in described pressing process, described promotion component is utilized to press with the part being supported on the territory, area in which the goods are in great demand of described inner side being positioned at the 2nd substrate the central part of the 1st substrate and the part being supported on the territory, area in which the goods are in great demand of described inner side of the central part of the 1st substrate and the 2nd substrate is abutted against.
Also can be, described 2nd maintaining part also has rib, this rib is concentric circles and ring-type is located at described main part and from this main part projection, described 2nd maintaining part can be set to carry out vacuum attraction to the 2nd substrate in each region in the distributing area in the outside of distributing area in the inner side of described rib and described rib, keep in operation the described 2nd, after distributing area place absorption maintenance the 2nd substrate of described inner side, at distributing area place absorption maintenance the 2nd substrate in described outside.
Also can be, in described bonding process, utilize the temperature of thermoregulation mechanism to the 2nd substrate being located at described 2nd maintaining part to regulate, while the 1st substrate and the 2nd substrate are engaged.
the effect of invention
Adopt the present invention, can regulate the substrate that will be engaged horizontal direction location-appropriate each other and suppress coincidence substrate to produce space, thus can suitably carry out this substrate joining process each other.
Accompanying drawing explanation
Fig. 1 is the plane graph of the schematic configuration of the mating system representing present embodiment.
Fig. 2 is the end view of the inside schematic configuration of the mating system representing present embodiment.
Fig. 3 is the end view of the schematic configuration representing wafer and lower wafer.
Fig. 4 is the sectional elevation of the schematic configuration representing coupling device.
Fig. 5 is the longitudinal section of the schematic configuration representing coupling device.
Fig. 6 is the longitudinal section of the schematic configuration representing sucker and lower sucker.
Fig. 7 is the plane graph taking a fancy to sucker from below.
Fig. 8 is the plane graph descending sucker seen from above.
Fig. 9 is the flow chart of the master operation representing wafer joining process.
Figure 10 is the key diagram of the situation representing wafer under the absorption of the 1st distributing area place keeps.
Figure 11 is the key diagram of the situation representing wafer under the absorption of the 2nd distributing area place keeps.
Figure 12 represents press the central part of upper wafer and the central part of lower wafer and make the key diagram of the situation that both abut against.
Figure 13 represents the key diagram making wafer be connected to the situation of lower wafer successively.
Figure 14 is the key diagram representing the situation that the surface of the surface of wafer and lower wafer has been abutted against.
Figure 15 is the key diagram representing the situation upper wafer and lower wafer engaged.
Figure 16 is the longitudinal section of the schematic configuration of the lower sucker represented in other execution modes.
Figure 17 is the plane graph of the lower sucker in other execution modes.
Figure 18 is the plane graph of the lower sucker in other execution modes.
Figure 19 is the longitudinal section of the schematic configuration of the lower sucker represented in other execution modes.
Figure 20 is the longitudinal section of the schematic configuration of the lower sucker represented in other execution modes.
Embodiment
Below, embodiments of the present invention are described.Fig. 1 is the plane graph of the schematic configuration of the mating system 1 representing present embodiment.Fig. 2 is the end view of the inside schematic configuration representing mating system 1.
In mating system 1, as shown in Figure 3 such as using two wafer W as substrate u, W lengage.Below, the wafer being configured at upside is called " the upper wafer W as the 1st substrate u", the wafer being configured at downside is called " the lower wafer W as the 2nd substrate l".Further, by upper wafer W uthe composition surface that will be engaged be called " surperficial W u1", will with this surperficial W u1the face of that contrary side is called " back side W u2".Equally, by lower wafer W lthe composition surface that will be engaged be called " surperficial W l1", will with this surperficial W l1the face of that contrary side is called " back side W l2".Further, in mating system 1, by upper wafer W uwith lower wafer W lengage, thus form the coincidence wafer W as coincidence substrate t.
As shown in Figure 1, mating system 1 such as has structure input/output station 2 and treating stations 3 linked into an integrated entity, and this input/output station 2 is in out box C between itself and outside u, C l, C t, this box C u, C l, C tmultiple wafers W can be held respectively u, multiple wafers W l, multiple coincidence wafers W t, this treating stations 3 comprises for wafer W u, W l, coincidence wafer W timplement the various processing unit of the process of regulation.
Box mounting table 10 is provided with in input/output station 2.Box mounting table 10 is provided with multiple, such as 4 box loading plates 11.Box loading plate 11 configures in mode X-direction (above-below direction in Fig. 1) being in the horizontal direction arranged in row.At the outside in out box C relative to mating system 1 u, C l, C ttime, can by box C u, C l, C tbe positioned on these box loading plates 11.So, input/output station 2 is configured to possess wafer W on multiple u, multiple lower wafer W l, multiple coincidence wafers W t.In addition, the number of box loading plate 11 is not limited to present embodiment, but can at random determine.In addition, also one of them box can be used for reclaim abnormal wafer.That is, be such box: can by because a variety of causes is at upper wafer W uwith lower wafer W labnormal wafer and other the normal wafer W that overlaps is produced in joint tbe separated.In the present embodiment, by multiple box C tamong 1 box C tfor reclaiming abnormal wafer, by other box C tfor holding normal coincidence wafer W t.
In input/output station 2, be adjacent to be provided with wafer delivery section 20 with box mounting table 10.Being provided with in wafer delivery section 20 can the wafer conveyance device 22 of movement on the transport path 21 extended in X direction.Wafer conveyance device 22 also can in vertical and upper mobile around the direction (θ direction) of vertical axis, can box C on each box loading plate 11 u, C l, C tand carry wafer W between the conveyer 50,51 of the 3rd treatment region G3 for the treatment of stations 3 described later u, W l, coincidence wafer W t.
Multiple, such as 3 treatment regions G1, G2, the G3 with various device are provided with in treating stations 3.Such as, be provided with the 1st treatment region G1 in the face side (the negative direction side of the X-direction of Fig. 1) for the treatment of stations 3, be provided with the 2nd treatment region G2 in the rear side (the positive direction side of the X-direction of Fig. 1) for the treatment of stations 3.Further, the 3rd treatment region G3 is provided with in that side (the negative direction side of the Y-direction of Fig. 1) by input/output station 2 for the treatment of stations 3.
Such as, be configured with in the 1st treatment region G1 for wafer W usurperficial W u1, wafer W lsurperficial W l1carry out the surface modification device 30 of modification.In surface modification device 30, under such as reduced atmosphere, encourage as the oxygen or nitrogen that process gas and make its plasmarized, ionization.To surperficial W u1, W l1irradiate this oxonium ion or Nitrogen ion and effects on surface W u1, W l1carry out plasma treatment, thus effects on surface W u1, W l1carry out modification.
Such as, in the 2nd treatment region G2, from input/output station 2 side, Y-direction is in the horizontal direction configured with hydrophiling device 40, coupling device 41 according to the order arrangement of surface hydrophilic gasifying device 40, coupling device 41, and this hydrophiling device 40 utilizes such as pure water to make wafer W usurperficial W u1, wafer W lsurperficial W l1hydrophiling to this surperficial W u1, W l1clean, this coupling device 41 is for by wafer W u, W lengage.
In surface hydrophilic gasifying device 40, make the wafer W kept by such as rotating suction disc u, W lrotate, to this wafer W u, W lupper supply pure water.So the pure water that supply is come is at wafer W u, W lsurperficial W u1, W l1upper diffusion and make surperficial W u1, W l1hydrophiling.In addition, the structure of coupling device 41 is described later.
Such as, as shown in Figure 2, divide from below in the 3rd treatment region G3 and be two-layerly provided with wafer W successively u, W l, coincidence wafer W tconveyer 50,51.
As shown in Figure 1, in the region surrounded by the 1st treatment region G1 ~ the 3rd treatment region G3, wafer conveyor zones 60 is formed with.Wafer conveyance device 61 is such as configured with in wafer conveyor zones 60.
Wafer conveyance device 61 such as have can in vertical, the upper and conveying arm that moves up in the side around vertical axis of horizontal direction (Y-direction, X-direction).Wafer conveyance device 61 is mobile in wafer conveyor zones 60, can by wafer W u, W l, coincidence wafer W tbe transported in the device of the regulation in the 1st treatment region G1 of surrounding, the 2nd treatment region G2 and the 3rd treatment region G3.
As shown in Figure 1, in above mating system 1, control device 70 is provided with.Control device 70 is such as computer, and it has program storage part (not shown).Have program stored therein in program storage part, this program is used for the wafer W in mating system 1 u, W l, coincidence wafer W tprocess control.Further, the action also stored in program storage part for the drive system to described various processing unit, conveying device etc. controls the program of the wafer joining process described later realized in mating system 1.In addition, described program is stored in the storage medium H of the embodied on computer readable such as hard disk (HD), floppy disk (FD), CD (CD), photomagneto disk (MO), storage card of such as embodied on computer readable, and described program also can be installed to control device 70 from this storage medium H.
Then, the structure of described coupling device 41 is described.As shown in Figure 4, coupling device 41 has the container handling 100 that inside can be made airtight.Wafer W is formed in the side by wafer conveyor zones 60 side of container handling 100 u, W l, coincidence wafer W tinput/output port 101, this input/output port 101 is provided with shutter 102.
The inside of container handling 100 is divided into conveyor zones T1 and processing region T2 by inwall 103.Described input/output port 101 is formed at the part being in conveyor zones T1 of the side of container handling 100.Further, inwall 103 is also formed with wafer W u, W l, coincidence wafer W toutput delivery outlet 104.
Be provided with in the positive direction side of the X-direction of conveyor zones T1 for temporarily wafer W u, W l, coincidence wafer W tcarry out the conveyer 110 loaded.Conveyer 110 is such as formed as two-layer and can loads wafer W simultaneously u, W l, coincidence wafer W tin any two wafers.
Wafer conveying mechanism 111 is provided with in conveyor zones T1.As shown in Figure 4 and Figure 5, wafer conveying mechanism 111 such as have can in vertical, the upper and conveying arm that moves up in the side around vertical axis of horizontal direction (Y-direction, X-direction).So wafer conveying mechanism 111 can carry wafer W in conveyor zones T1 or between conveyor zones T1 and processing region T2 u, W l, coincidence wafer W t.
Be provided with for wafer W in the negative direction side of the X-direction of conveyor zones T1 u, W lhorizontal direction on towards the position adjusting mechanism 120 carrying out regulating.Position adjusting mechanism 120 comprises: pedestal 121, and it has maintaining part (not shown), and this maintaining part is for keeping wafer W u, W land make wafer W u, W lrotate; Test section 122, it is for detecting wafer W u, W lthe position of notch.Further, in position adjusting mechanism 120, by making the wafer W kept by pedestal 121 u, W lrotate while utilize test section 122 to detect wafer W u, W lthe position of notch, thus regulate the position of this notch and regulate wafer W u, W lhorizontal direction on towards.In addition, pedestal 121 keeps wafer W u, W lmode and be not particularly limited, various modes such as such as selling sucker (PinChuck) mode, rotating suction disc mode can be used.
In addition, be provided with switching mechanism 130 in conveyor zones T1, this switching mechanism 130 is for making upper wafer W usurface and the back side upset.Switching mechanism 130 has for keeping upper wafer W ukeeping arm 131.Keeping arm 131 in the horizontal direction (Y-direction) extends.In addition, such as 4 positions on keeping arm 131 are provided with for keeping wafer W uretaining member 132.
Keeping arm 131 is supported by the drive division 133 with such as motor etc.Keeping arm 131 utilizes this drive division 133 can around horizontal axis.In addition, keeping arm 131 can rotate and can (Y-direction) above move in the horizontal direction centered by drive division 133.Be provided with another drive division (not shown) in the below of drive division 133, this another drive division has such as motor etc.Drive division 133 can utilize this another drive division to move in vertical along the support column 134 extended in vertical.So, the upper wafer W kept by retaining member 132 udrive division 133 can be utilized around horizontal axis and move in vertical and horizontal direction.In addition, the upper wafer W kept by retaining member 132 ucan rotate centered by drive division 133 and position adjusting mechanism 120 and described later on move between sucker 140.
Be provided with as the upper sucker 140 of the 1st maintaining part and the lower sucker 141 as the 2nd maintaining part in processing region T2, on this, sucker 140 utilizes lower surface to adsorb and keeps upper wafer W u, this lower sucker 141 utilizes upper surface to load and adsorbs and keeps lower wafer W l.Lower sucker 141 is arranged on the below of sucker 140 and is configured to be oppositely disposed with upper sucker 140.That is, the upper wafer W kept by upper sucker 140 uwith the lower wafer W kept by lower sucker 141 lcan relatively configure.
Upper sucker 140 is supported on the upper sucker support 150 of the top being arranged on sucker 140 on this.Upper sucker support 150 is arranged at the end face of container handling 100.That is, upper sucker 140 is fixedly arranged at container handling 100 via upper sucker support 150.
Upper sucker support 150 is provided with top shoot part 151, and this top shoot part 151 is for the lower wafer W kept by lower sucker 141 lsurperficial W l1take.That is, top shoot part 151 is arranged in the mode adjacent with upper sucker 140.As top shoot part 151, such as CCD camera can be used.
Lower sucker 141 is supported on the 1st time sucker moving part 160 of the below being arranged on this lower sucker 141.1st time sucker moving part 160 is configured to make (Y-direction) movement in the horizontal direction of lower sucker 141 as described later.In addition, the 1st time sucker moving part 160 is configured to make lower sucker 141 move along vertical and can rotate around vertical axis.
1st time sucker moving part 160 is provided with bottom shoot part 161, and this bottom shoot part 161 is for the upper wafer W kept by upper sucker 140 usurperficial W u1take.That is, bottom shoot part 161 is arranged in the mode adjacent with lower sucker 141.As bottom shoot part 161, such as CCD camera can be used.
1st time sucker moving part 160 is installed in the horizontal direction (Y-direction) upper pair of guide rails 162,162 extended, and this pair of guide rails 162,162 is located at the lower face side of the 1st time sucker moving part 160.So the 1st time sucker moving part 160 is configured to move along guide rail 162.
Pair of guide rails 162,162 is configured at the 2nd time sucker moving part 163.2nd time sucker moving part 163 is installed in the horizontal direction (X-direction) upper pair of guide rails 164,164 extended, and this pair of guide rails 164,164 is located at the lower face side of the 2nd time sucker moving part 163.So the 2nd time sucker moving part 163 is configured to move along guide rail 164, namely be configured to make (X-direction) movement in the horizontal direction of lower sucker 141.In addition, pair of guide rails 164,164 is configured in the mounting table 165 of the bottom surface being arranged on container handling 100.
Next, the upper sucker 140 of coupling device 41 and the detailed construction of lower sucker 141 are described.
As shown in Figure 6 and Figure 7, upper sucker 140 adopts pin sucker mode.Upper sucker 140 has main part 170, and this main part 170 has and is at least greater than wafer W when overlooking uthe diameter of diameter.Be provided with and upper wafer W at the lower surface of main part 170 uback side W u2the multiple pins 171 contacted.In addition, the rib 172 of ring-type is provided with at the position being positioned at the outside of multiple pin 171 of the lower surface of main part 170.Rib 172 at least goes up wafer W with supporting uback side W u2the mode of outer edge support this back side W u2peripheral part.
Further, other rib 173 is provided with at the position being positioned at the inner side of rib 172 of the lower surface of main part 170.Rib 173 is to be set to ring-type with the mode of rib 172 in concentric circles.Further, the region 174 of the inner side of rib 172 (below, is called distributing area 174 sometimes.) be divided into the 2nd distributing area 174b in the 1st distributing area 174a of the inner side of rib 173 and the outside of rib 173.
In the 1st distributing area 174a of the lower surface of main part 170, be formed with the 1st suction port 175a, the 1st suction port 175a is used for upper wafer W ucarry out vacuum attraction.1st suction port 175a is formed at two positions in such as the 1st distributing area 174a.1st suction port 175a is connected with the 1st suction tube 176a of the inside being located at main part 170.Further, the 1st suction tube 176a is connected with the 1st vacuum pump 177a via joint.
In addition, in the 2nd distributing area 174b of the lower surface of main part 170, be formed with the 2nd suction port 175b, the 2nd suction port 175b is used for upper wafer W ucarry out vacuum attraction.2nd suction port 175b is formed at two positions in such as the 2nd distributing area 174b.2nd suction port 175b is connected with the 2nd suction tube 176b of the inside being located at main part 170.Further, the 2nd suction tube 176b is connected with the 2nd vacuum pump 177b via joint.
As mentioned above, upper sucker 140 be configured to can in each region in the 1st distributing area 174a and the 2nd distributing area 174b on wafer W ucarry out vacuum attraction.In addition, the configuration of suction port 175a, 175b is not limited to present embodiment, and can at random set.
Further, respectively self-gravitation mouth 175a, 175b to by upper wafer W u, main part 170 and rib 172 distributing area 174a, 174b of surrounding and being formed vacuumize, thus reduce pressure to distributing area 174a, 174b.Now, the atmosphere due to the outside of distributing area 174a, 174b is atmospheric pressure, therefore, and upper wafer W upressed to distributing area 174a, 174b side by atmospheric pressure accordingly with the amount of decompression, thus by upper wafer W uabsorption is held in sucker 140.
In this case, because rib 172 supports upper wafer W uback side W u2peripheral part, therefore, can until on wafer W uperipheral part till scope in upper wafer W usuitably carry out vacuum attraction.Therefore, it is possible to by upper wafer W uwhole absorption be held in sucker 140 and reduce wafer W on this uflatness, thus wafer W can be made usmooth.
Further, because the height of multiple pin 171 is homogeneous, therefore, it is possible to reduce the flatness of the lower surface of upper sucker 140 further.So make the lower surface of sucker 140 smooth (reducing the flatness of lower surface), the upper wafer W kept by upper sucker 140 can be suppressed uvertical on distortion.
In addition, due to upper wafer W uback side W u2be supported on multiple pin 171, therefore, releasing on sucker 140 on wafer W uduring the vacuum attraction carried out, wafer W on this ueasily peel from upper sucker 140.
The through hole 178 that through-thickness runs through this main part 170 is formed at the central part of the main part 170 of upper sucker 140.Central part and the absorption of this main part 170 are held in the upper wafer W of sucker 140 ucentral part corresponding.Further, the top ends of the drive portion 181 of promotion component 180 described later is inserted in through hole 178.
The upper surface of upper sucker 140 be provided with on wafer W ucentral part carry out the promotion component 180 that presses.Promote component 180 and there is drive portion 181 and cylinder portion 182.
Drive portion 181 utilizes the air supplied from electric-gas pressure regulating valve (not shown) in constant direction, produce constant pressure, and how the position of its not application point of pipe pressure all can produce this pressure consistently.Further, the air from electric-gas pressure regulating valve can be utilized to make drive portion 181 and upper wafer W ucentral part to abut against and to putting on wafer W on this uthe pressing load of central part control.In addition, the air from electric-gas pressure regulating valve is utilized the top ends of drive portion 181 to be inserted in through hole 178 and can be elevated along vertical.
Drive portion 181 is supported on cylinder portion 182.Cylinder portion 182 can utilize the drive division being such as built-in with motor to move to make drive portion 181 along vertical.
As mentioned above, promoting component 180 utilizes drive portion 181 control pressing load and utilize the movement of cylinder portion 182 to drive portion 181 to control.So, at wafer W described later u, W ljoint time, promote component 180 can make wafer W ucentral part and lower wafer W lcentral part abut against and press.
As shown in Figure 6 and Figure 8, in the same manner as upper sucker 140, lower sucker 141 adopts pin sucker mode.Lower sucker 141 has main part 190, and this main part 190 has and is at least greater than lower wafer W when overlooking lthe diameter of diameter.
Be provided with and lower wafer W at the upper surface of main part 190 lback side W l2the multiple pins 191 contacted.The apical position of the pin 191a of in these multiple pins 191, to be located at main part 190 central parts is higher than the apical position of pin 191b of peripheral part being located at main part 190.Further, multiple pin 191 with its height from central part toward the outside perimembranous go the mode reduced gradually to arrange.
In addition, the rib 192 of ring-type is provided with at the position being positioned at the outside of multiple pin 191 of the upper surface of main part 190.Rib 192 at least descends wafer W with supporting lback side W l2the mode of outer edge support this back side W l2peripheral part.
Further, other rib 193 is provided with at the position being positioned at the inner side of rib 192 of the upper surface of main part 190.Rib 193 is to be set to ring-type with the mode of rib 192 in concentric circles.Further, the region 194 of the inner side of rib 192 (below, is called distributing area 194 sometimes.) be divided into the 2nd distributing area 194b in the 1st distributing area 194a of the inner side of rib 193 and the outside of rib 193.
In the 1st distributing area 194a of the upper surface of main part 190, be formed with the 1st suction port 195a, the 1st suction port 195a is used for lower wafer W lcarry out vacuum attraction.1st suction port 195a is formed at two positions in such as the 1st distributing area 194a.1st suction port 195a is connected with the 1st suction tube 196a of the inside being located at main part 190.Further, the 1st suction tube 196a is connected with the 1st vacuum pump 197a via joint.
In addition, in the 2nd distributing area 194b of the upper surface of main part 190, be formed with the 2nd suction port 195b, the 2nd suction port 195b is used for lower wafer W lcarry out vacuum attraction.2nd suction port 195b is formed at two positions in such as the 2nd distributing area 194b.2nd suction port 195b is connected with the 2nd suction tube 196b of the inside being located at main part 190.Further, the 2nd suction tube 196b is connected with the 2nd vacuum pump 197b via joint.
As mentioned above, be configured to can to lower wafer W in each region in the 1st distributing area 194a and the 2nd distributing area 194b for lower sucker 141 lcarry out vacuum attraction.In addition, the configuration of suction port 195a, 195b is not limited to present embodiment, and can at random set.
Further, respectively self-gravitation mouth 195a, 195b to by lower wafer W l, main part 190 and rib 192 distributing area 194a, 194b of surrounding and being formed vacuumize, thus reduce pressure to distributing area 194a, 194b.Now, the atmosphere due to the outside of distributing area 194a, 194b is atmospheric pressure, therefore, and lower wafer W lpressed to distributing area 194a, 194b side by atmospheric pressure accordingly with the amount of decompression, thus by lower wafer W labsorption is held in lower sucker 141.
In this case, because rib 192 supports lower wafer W lback side W l2peripheral part, therefore, can until lower wafer W lperipheral part till scope in lower wafer W lsuitably carry out vacuum attraction.Further, the upper surface along lower sucker 141 keeps lower wafer W l.That is, due to multiple pin 191 height from the central part of lower sucker 141 toward the outside perimembranous go and reduce gradually, therefore, lower wafer W lalso be kept in the mode that its central part is more outstanding than peripheral part.
In addition, due to lower wafer W lback side W l2be supported on multiple pin 191, therefore, under releasing, sucker 141 is to lower wafer W lduring the vacuum attraction carried out, this lower wafer W leasily peel from lower sucker 141.
Such as 3 positions near the central part of the main part 190 of lower sucker 141 are formed with the through hole 198 that through-thickness passes through this main part 190.Further, the lifter pin being located at the below of the 1st time sucker moving part 160 is inserted in through hole 198.
Be provided with guiding elements 199 at the peripheral part of main part 190, this guiding elements 199 is for preventing wafer W u, W l, coincidence wafer W tfly out or landing from lower sucker 141.Guiding elements 199 is equally spaced arranged on multiple positions, such as 4 positions of the peripheral part of main part 190.
In addition, utilize described control part 70 to control the action of each several part of coupling device 41.
Next, the wafer W using mating system 1 as constructed as above to carry out is described u, W lbonding processes.Fig. 9 is the flow chart of the example of the master operation representing this wafer joining process.
First, wafer W on multiple will be contained ubox C u, contain multiple lower wafer W lbox C land the box C of sky tbe placed in the box loading plate 11 of the regulation of input/output station 2.Afterwards, utilize wafer conveyance device 22 by box C uinterior upper wafer W utake out, and by upper wafer W ube transported to the conveyer 50 of the 3rd treatment region G3 for the treatment of stations 3.
Then, utilize wafer conveyance device 61 by upper wafer W ube transported to the surface modification device 30 of the 1st treatment region G1.In surface modification device 30, under the reduced atmosphere of regulation, encourage as the oxygen or nitrogen that process gas and make its plasmarized, ionization.Upwards wafer W usurperficial W u1irradiate this oxonium ion or Nitrogen ion and to this surperficial W u1carry out plasma treatment.So, upper wafer W usurperficial W u1be modified (the operation S1 of Fig. 9).
Then, utilize wafer conveyance device 61 by upper wafer W ube transported to the surface hydrophilic gasifying device 40 of the 2nd treatment region G2.In surface hydrophilic gasifying device 40, make the upper wafer W kept by rotating suction disc urotate, wafer W on this uupper supply pure water.So the pure water that supply is come is at upper wafer W usurperficial W u1upper diffusion, hydroxyl (silanol group) is attached to wafer W uthe surperficial W be modified in surface modification device 30 u1above make this surperficial W u1hydrophiling.In addition, utilize this pure water to clean upper wafer W usurperficial W u1(the operation S2 of Fig. 9).
Then, utilize wafer conveyance device 61 by upper wafer W ube transported to the coupling device 41 of the 2nd treatment region G2.Be input to the upper wafer W of coupling device 41 uposition adjusting mechanism 120 is transported to by wafer conveying mechanism 111 via conveyer 110.Then, utilize position adjusting mechanism 120 to regulate upper wafer W uhorizontal direction on towards (the operation S3 of Fig. 9).
Afterwards, by upper wafer W uthe keeping arm 131 of switching mechanism 130 is handed off to from position adjusting mechanism 120.Then, in conveyor zones T1, overturn by making keeping arm 131 and make upper wafer W usurface and the back side upset (the operation S4 of Fig. 9).That is, wafer W is made usurperficial W u1downward.
Afterwards, make the keeping arm 131 of switching mechanism 130 carry out rotating centered by drive division 133 and move to the below of upper sucker 140.Then, by upper wafer W uupper sucker 140 is handed off to from switching mechanism 130.Adsorbed by upper sucker 140 and keep upper wafer W uback side W u2.(the operation S5 of Fig. 9).Specifically, vacuum pump 177a, 177b are worked, in distributing area 174a, 174b via suction port 175a, 175b on wafer W ucarry out vacuum attraction, thus by upper wafer W uabsorption is held in sucker 140.
To on wafer W uduring carrying out the process of described operation S1 ~ operation S5, then wafer W on this ucarry out lower wafer W lprocess.First, utilize wafer conveyance device 22 by box C linterior lower wafer W ltake out, and by lower wafer W lbe transported to the conveyer 50 for the treatment of stations 3.
Then, utilize wafer conveyance device 61 by lower wafer W lbe transported to surface modification device 30, to lower wafer W lsurperficial W l1carry out modification (the operation S6 of Fig. 9).In addition, the lower wafer W in operation S6 lsurperficial W l1modification identical with described operation S1.
Afterwards, utilize wafer conveyance device 61 by lower wafer W lbe transported to surface hydrophilic gasifying device 40, make lower wafer W lsurperficial W l1hydrophiling also cleans this surperficial W l1(the operation S7 of Fig. 9).In addition, the lower wafer W in operation S7 lsurperficial W l1hydrophiling with cleaning identical with described operation S2.
Afterwards, utilize wafer conveyance device 61 by lower wafer W lbe transported to coupling device 41.Be input to the lower wafer W of coupling device 41 lposition adjusting mechanism 120 is transported to by wafer conveying mechanism 111 via conveyer 110.Then, utilize position adjusting mechanism 120 to regulate lower wafer W lhorizontal direction on towards (the operation S8 of Fig. 9).
Afterwards, utilize wafer conveying mechanism 111 by lower wafer W lbe transported to lower sucker 141, adsorbed by lower sucker 141 and keep lower wafer W lback side W l2(the operation S9 of Fig. 9).In operation S9, first, the 1st vacuum pump 197a is worked, thus as shown in Figure 10 in the 1st distributing area 194a from the 1st suction port 195a to lower wafer W lcarry out vacuum attraction.So, by lower wafer W lhorizontal direction on position fix.Afterwards, make the 1st vacuum pump 197a work state under, make the 2nd vacuum pump 197b work further, thus as shown in Figure 11 in distributing area 194a, 194b self-gravitation mouth 195a, 195b to lower wafer W lcarry out vacuum attraction.So, by lower wafer W lwhole absorption be held in lower sucker 141.Now, as described, lower wafer W lthe mode of giving prominence to than peripheral part with its central part is kept along the upper surface of lower sucker 141.
Then, to the upper wafer W kept by upper sucker 140 uwith the lower wafer W kept by lower sucker 141 lhorizontal direction on position regulate.Specifically, utilize the 1st time sucker moving part 160 and the 2nd time sucker moving part 163 to make (X-direction and the Y-direction) movement in the horizontal direction of lower sucker 141, use top shoot part 151 to lower wafer W lsurperficial W l1on predetermined datum mark take successively.Meanwhile, use bottom shoot part 161 to upper wafer W usurperficial W u1on predetermined datum mark take successively.Taken image is outputted to control part 70.In control part 70, according to the image photographed by top shoot part 151 and the image photographed by bottom shoot part 161, the 1st time sucker moving part 160 and the 2nd time sucker moving part 163 is utilized to make upper wafer W to make lower sucker 141 move to udatum mark and lower wafer W lthe respectively unanimously such position of datum mark.So, can to upper wafer W uwith lower wafer W lhorizontal direction position carry out regulating (the operation S10 of Fig. 9).
Afterwards, the 1st time sucker moving part 160 is utilized to make lower sucker 141 move above vertical and regulate the vertical position of upper sucker 140 and lower sucker 141, thus to the upper wafer W kept by sucker on this 140 uwith the lower wafer W kept by lower sucker 141 lvertical position carry out regulating (the operation S11 of Fig. 9).
Next, to the upper wafer W kept by upper sucker 140 uwith the lower wafer W kept by lower sucker 141 lcarry out joining process.
First, as shown in figure 12, utilize the cylinder portion 182 promoting component 180 that drive portion 181 is declined.So, along with the decline of this drive portion 181, upper wafer W ucentral part be pressed and decline.Now, pressing load drive portion 181 applying specified from the air of electric-gas pressure regulating valve supply is utilized.Then, promotion component 180 is utilized to make wafer W ucentral part and lower wafer W lcentral part to abut against and to upper wafer W ucentral part and lower wafer W lcentral part carry out pressing (the operation S12 of Fig. 9).Now, make the 1st vacuum pump 177a quit work and stop the 1st suction port 175a in the 1st distributing area 174a to upper wafer W uthe vacuum attraction carried out, vacuumizes the 2nd distributing area 174b from the 2nd suction port 175b under the state making the 2nd vacuum pump 177b work.Further, component 180 is promoted by pressing wafer W in utilization ucentral part time, sucker 140 also can be utilized to keep upper wafer W uperipheral part.
So, make the upper wafer W be pressed ucentral part and lower wafer W lcentral part between start engage (the thick line portion in Figure 12).That is, due to upper wafer W usurperficial W u1with lower wafer W lsurperficial W l1be modified in operation S1, S6 respectively, therefore, first, at surperficial W u1, W l1between produce Van der Waals force (molecular separating force) and by this surperficial W u1, W l1be engaged with each other.Afterwards, due to upper wafer W usurperficial W u1with lower wafer W lsurperficial W l1respectively in operation S2, S7 by hydrophiling, therefore, at surperficial W u1, W l1between hydrophilic group produce Hydrogenbond (molecular separating force), by surperficial W u1, W l1firmly engage.
In this operation S12, upper wafer W ucentral part be pressed and decline, and, upper wafer W uperipheral part be held in sucker 140, thus upper wafer W ustretch out in the mode of protruding ground warpage downwards.On the other hand, along the upper surface of lower sucker 141, lower wafer W lcentral part than lower wafer W lperipheral part give prominence to, thus lower sucker 141 stretches out in the mode of protruding ground warpage upward.In it is possible to make upper wafer W uwith lower wafer W lfor roughly laterally zygomorphic shape, and wafer W on these can be made uwith lower wafer W loverhang roughly the same.Therefore, it is possible to suppress upper wafer W uwith lower wafer W ldislocation (convergent-divergent) in horizontal direction when engaging.
Afterwards, as shown in figure 13, promote component 180 in utilization and press wafer W ucentral part and lower wafer W lcentral part state under, the 2nd vacuum pump 177b is quit work and stops the 2nd suction tube 176b in the 2nd distributing area 174b to upper wafer W uthe vacuum attraction carried out.So, upper wafer W udrop to lower wafer W lon.Now, due to upper wafer W uback side W u2be supported on multiple pin 171, therefore, releasing on sucker 140 on wafer W uduring the vacuum attraction carried out, wafer W on this ueasily peel from upper sucker 140.So, upper wafer W udrop to lower wafer W successively lupper and with lower wafer W labut against, based on described surperficial W u1, W l1between Van der Waals force and the joint of Hydrogenbond expand successively.Like this, as shown in figure 14, wafer W is made usurperficial W u1with lower wafer W lsurperficial W l1whole abuts, thus makes wafer W uwith lower wafer W lengage (the operation S13 of Fig. 9).
Herein, in described operation S12, due to lower wafer W lremained protruding upward by lower sucker 141, therefore, it is possible to utilize promotion component 180 to make wafer W ucentral part and lower wafer W lcentral part reliably abut.So, in operation S13, wafer W on making uwith lower wafer W lwhen perimembranous abuts successively toward the outside from central part, these wafers W can be made u, W lbetween air reliably flow out to peripheral part from central part, thus can suppress engage after coincidence wafer W tproduce space.
Afterwards, as shown in figure 15, the drive portion 181 of promotion component 180 is made to rise to sucker 140.In addition, vacuum pump 197a, 197b is made to quit work and stop at distributing area 194 place to lower wafer W lthe vacuum attraction carried out, thus stop utilizing lower sucker 141 to adsorb the lower wafer W of maintenance l.Now, due to lower wafer W lback side W l2be supported on multiple pin 191, therefore, under releasing, sucker 141 is to lower wafer W lduring the vacuum attraction carried out, this lower wafer W leasily peel from lower sucker 141.
Utilize wafer conveyance device 61 will by upper wafer W uwith lower wafer W lthe coincidence wafer W engaged tbe transported to conveyer 51, then utilize the wafer conveyance device 22 of input/output station 2 by coincidence wafer W tbe transported to the box C of the box loading plate 11 of regulation t.So, a series of wafer W is completed u, W ljoining process.
Adopt above execution mode, lower wafer W llower sucker 141 is held in mode protruding upward.Therefore, in operation S12, promote component 180 by pressing wafer W even if utilize ucentral part and make wafer W ucentral part stretch out in the mode of protruding ground warpage downwards, lower wafer W lalso with this on wafer W uroughly laterally zygomorphic shape is stretched out in the mode of protruding ground warpage upward.Therefore, by making upper wafer W uwith lower wafer W loverhang identical, wafer W can be suppressed uwith lower wafer W lhorizontal direction on dislocation (convergent-divergent).
Further, because lower sucker 141 is divided into the 1st distributing area 194a and the 2nd distributing area 194b by rib 192, therefore, in operation S9, lower sucker 141 can be utilized to keep lower wafer W with two stages l.That is, first, due in the 1st distributing area 194a to lower wafer W lcarry out vacuum attraction and by this lower wafer W lhorizontal direction on position fix, therefore, afterwards, in distributing area 194a, 194b to lower wafer W lwhen carrying out vacuum attraction, this lower wafer W lhorizontal direction on position can not offset.Thus, can by lower wafer W labsorption is held in the suitable position of lower sucker 141, thus can suppress described convergent-divergent further.
In addition, upper wafer W uwith lower wafer W lany one wafer that can be device wafers and support in wafer.Device wafers is the semiconductor crystal wafer becoming product, such as, on the surface of device wafers, be formed with the device with multiple electronic loops etc.In addition, supporting wafer is the wafer for supporting device wafer, and the surface of supporting wafer does not form device.Further, any one joining process in device wafers and the supporting joining process of wafer and device wafers joining process each other can also be applied the present invention to.But, when device wafers being engaged with each other, in order to make the coincidence wafer W after joint tsuitably play function as product, need to make wafer W uelectronic loop and lower wafer W lelectronic loop suitably corresponding.Therefore, the way of convergent-divergent is suppressed to be particularly useful to device wafers joining process each other as described.
In addition, due to lower wafer W lbe held in lower sucker 141 in mode protruding upward, therefore, in operation S12, can utilize and promote component 180 to make upper wafer W ucentral part and lower wafer W lcentral part reliably abut.Therefore, in operation S13, wafer W on making uwith lower wafer W lwhen abutting against, wafer W on these uwith lower wafer W lbetween air reliably flow out to peripheral part from central part, thus can suppress engage after coincidence wafer W tproduce space.
As mentioned above, adopt present embodiment, can suitably regulate wafer W uwith lower wafer W lhorizontal direction on position and suppress coincidence wafer W tproduce space, thus can suitably carry out wafer W on this uwith lower wafer W ljoining process.
In addition, in the mating system 1 of present embodiment, except comprising coupling device 41, also comprise for wafer W u, W lsurperficial W u1, W l1carry out the surface modification device 30 of modification, for making surperficial W u1, W l1hydrophiling to this surperficial W u1, W l1carry out the surface hydrophilic gasifying device 40 cleaned, therefore, it is possible to carry out wafer W efficiently in a system u, W ljoint.Thus, the productivity ratio of wafer joining process can be improved further.
Next, other execution modes of the lower sucker 141 in the coupling device 41 of above execution mode are described.
As shown in Figure 16 and Figure 17, also can be, according to the density of the configuration of pin 191, the main part 190 of lower sucker 141 is divided into the 1st territory, area in which the goods are in great demand 200 and the 2nd territory, area in which the goods are in great demand 201.The 1st rounded shape in territory, area in which the goods are in great demand 200 is located at the central part of main part 190.2nd territory, area in which the goods are in great demand 201 is to be located at the outside in the 1st territory, area in which the goods are in great demand 200 in the form of a ring with the mode of the 1st territory, area in which the goods are in great demand 200 in concentric circles.Further, the interval being located at the pin 191 in the 1st territory, area in which the goods are in great demand 200 is less than the interval of the pin 191 being located at the 2nd territory, area in which the goods are in great demand 201.
As mentioned above, in operation S12, promotion component 180 is utilized to come upper wafer W ucentral part and lower wafer W lcentral part (the 1st territory, area in which the goods are in great demand 200) press.So, under the effect of this pressing load, lower wafer W lcentral part be likely out of shape below vertical.Therefore, by reducing the interval of the pin 191 in the 1st territory, area in which the goods are in great demand 200 as shown in Figure 16, this lower wafer W can be suppressed lcentral part vertical on distortion.
In addition, as shown in figure 18, also can be the main part 190 of lower sucker 141 is divided into this territory, 3 areas in which the goods are in great demand of the 1st territory, area in which the goods are in great demand 210, the 2nd territory, area in which the goods are in great demand 211 and the 3rd territory, area in which the goods are in great demand 212 according to the density of the configuration of pin 191.1st territory, area in which the goods are in great demand 210, the 2nd territory, area in which the goods are in great demand 211, the 3rd territory, area in which the goods are in great demand 212 in concentric circles from central part toward the outside perimembranous go the arranged in order according to the 1st territory, area in which the goods are in great demand 210, the 2nd territory, area in which the goods are in great demand 211, the 3rd territory, area in which the goods are in great demand 212.Further, the interval being located at the pin 191 in the 1st territory, area in which the goods are in great demand 210 is less than the interval of the pin 191 being located at the 2nd territory, area in which the goods are in great demand 211.Further, the interval being located at the pin 191 in the 2nd territory, area in which the goods are in great demand 211 is less than the interval of the pin 191 being located at the 3rd territory, area in which the goods are in great demand 212.By like this from central part toward the outside perimembranous go to become large with making the interval step of pin 191, the lower wafer W being supported on lower sucker 141 can be made lcontact area gently change and suppress lower wafer W lcentral part vertical on distortion, thus lower sucker 141 can be utilized more suitably to keep lower wafer W l.In addition, the quantity in territory, area in which the goods are in great demand is not limited to present embodiment, and can at random set.The quantity in the territory, area in which the goods are in great demand divided is more, more can significantly obtain described effect.
In addition, as shown in figure 19, lower sucker 141 also can have for the lower wafer W kept by this lower sucker 141 ltemperature carry out the thermoregulation mechanism 220 that regulates.Thermoregulation mechanism 220 is built in such as main part 190.In addition, such as heater is used as thermoregulation mechanism 220.In this case, utilize thermoregulation mechanism 220 by lower wafer W lbeing heated to the temperature, the such as normal temperature (23 DEG C) ~ 100 DEG C that specify, thus, when carrying out described operation S13, wafer W can being eliminated u, W lbetween air.Thus, coincidence wafer W can be suppressed more reliably tproduce space.
In addition, multiple pins 191 of the lower sucker 141 of above execution mode with its height from central part toward the outside perimembranous to go and the mode that reduces gradually is arranged, but the change of the height of multiple pin 191 is not limited thereto.In the following description, multiple pin 191 apical position towards lower sucker 141 radial outside and when reducing, the change of the radial distance relative to lower sucker 141 of the apical position of multiple pin 191 is called " height change ".
Such as, as shown in figure 20, also can be, according to the height change of pin 191, the main part 190 of lower sucker 141 is divided into inside region 230 and exterior lateral area 231.The rounded shape of inside region 230 is located at the central part of main part 190.Exterior lateral area 231 is to be located at the outside of inside region 230 in the form of a ring with the mode of this inside region 230 in concentric circles.Further, the height change being located at the pin 191 of inside region 230 is less than the height change of the pin 191 being located at exterior lateral area 231.
In this case, can make to act on lower wafer W in the mode of such as ballooning lthe part kept by inside region 230 power and act on lower wafer W lthe power of the part kept by exterior lateral area 231 identical.That is, can make to act on lower wafer W lface in power even.Thus, lower sucker 141 can be utilized more suitably to keep lower wafer W l.
In the lower sucker 141 of above execution mode, in order to until lower wafer W lperipheral part till scope in carry out vacuum attraction and be provided with for supporting lower wafer W lthe rib 192 of ring-type of peripheral part, but for lower wafer W lthe peripheral part structure of carrying out vacuum attraction be not limited thereto.Also can be such as, use so-called hydrostatic seal, until lower wafer W lperipheral part till scope in carry out vacuum attraction.Specifically, at the peripheral part of main part 190, both can substitute rib 192 and arrange not with lower wafer W lthe rib (figure) of contact, or also can omit rib 192 and will until lower wafer W lperipheral part till scope in pin 191 is set.Then, the swabbing pressure based on the 2nd vacuum pump 197b is regulated, thus until lower wafer W lperipheral part till scope in carry out vacuum attraction.
In addition, the variation of the lower sucker 141 shown in described Figure 16 ~ Figure 19 also can be applied to sucker 140.Further, upper sucker 140 also can not be pin sucker mode, and can adopt such as based on the various mode such as vacuum cup mode, electrostatic chuck mode of flat sucker.
In the coupling device 41 of above execution mode, upper sucker 140 is fixed on container handling 100 and lower sucker 141 is moved with vertical in the horizontal direction, but also can be, on the contrary, sucker 140 is made to move with vertical in the horizontal direction and lower sucker 141 is fixed on container handling 100.But, make the way of sucker 140 movement that travel mechanism can be caused to maximize, therefore, preferably as described in upper sucker 140 is fixed on container handling 100 execution mode.
In the mating system 1 of above execution mode, also can be utilizing coupling device 41 by wafer W u, W lafter joint, further with the coincidence wafer W of the temperature of regulation to joint tcarry out heating (annealing in process).By counterweight synthetic circle W tcarry out heat treated, joint interface can be made to combine more firmly.
Above, describe preferred embodiment of the present invention with reference to accompanying drawing, but the present invention is not limited to this example.As long as those skilled in the art, can expect that in the scope of the design described in claims various modification or modification are apparent, described modification or modification are also considered to belong to protection scope of the present invention certainly.The invention is not restricted to this example, but various execution mode can be adopted.The present invention can also be applied to other the situation of substrate such as optical mask plate (maskreticle) that substrate is FPD (flat-panel monitor) outside wafer, photomask.
description of reference numerals
1, mating system; 2, input/output station; 3, treating stations; 30, surface modification device; 40, surface hydrophilic gasifying device; 41, coupling device; 61, wafer conveyance device; 70, control part; 140, upper sucker; 141, lower sucker; 180, component is promoted; 190, main part; 191, sell; 192, rib; 193, rib; 194a, the 1st distributing area; 194b, the 2nd distributing area; 200, the 1st territory, area in which the goods are in great demand; 201, the 2nd territory, area in which the goods are in great demand; 210, the 1st territory, area in which the goods are in great demand; 211, the 2nd territory, area in which the goods are in great demand; 212, the 3rd territory, area in which the goods are in great demand; 220, thermoregulation mechanism; 230, inside region; 231, exterior lateral area; W u, upper wafer; W l, lower wafer; W t, coincidence wafer.

Claims (12)

1. a coupling device, it, for being engaged with each other by substrate, is characterized in that,
This coupling device comprises:
1st maintaining part, the 1st substrate adsorption is held in lower surface for carrying out vacuum attraction to the 1st substrate by it; And
2nd maintaining part, it is located at the below of described 1st maintaining part, the 2nd substrate adsorption is held in upper surface for carrying out vacuum attraction to the 2nd substrate,
Described 2nd maintaining part there is main part for carrying out vacuum attraction to the 2nd substrate and be located at described main part and and multiple pins of touching of the back face of the 2nd substrate,
The apical position being located at the described pin of the central part of described main part is higher than the apical position of described pin of peripheral part being located at described main part.
2. coupling device according to claim 1, is characterized in that,
Described main part is divided into inside region and the exterior lateral area of concentric circles,
The apical position being located at described multiple pin of described inside region goes and step-down towards radial outside,
The apical position being located at described multiple pin of described exterior lateral area goes and step-down towards radial outside,
The change relative to radial distance being less than the apical position of multiple pin described in described exterior lateral area relative to the change of radial distance of the apical position of multiple pin described in described inside region.
3. coupling device according to claim 1 and 2, is characterized in that,
This coupling device also comprises promotion component, and described 1st maintaining part is located at by this promotion component, for pressing the central part of the 1st substrate.
4. coupling device according to claim 1 and 2, is characterized in that,
Described main part is divided into the territory, multiple area in which the goods are in great demand of concentric circles,
In territory, described multiple area in which the goods are in great demand, the interval of the described multiple pin in the territory, area in which the goods are in great demand of inner side is less than the interval of the described multiple pin in the territory, area in which the goods are in great demand in outside.
5. coupling device according to claim 1 and 2, is characterized in that,
Described 2nd maintaining part also has rib, and this rib is concentric circles and ring-type is located at described main part and from this main part projection,
Described 2nd maintaining part can be set to carry out vacuum attraction to the 2nd substrate in each region in the distributing area in the outside of distributing area in the inner side of described rib and described rib.
6. coupling device according to claim 1 and 2, is characterized in that,
Described 2nd maintaining part also has the thermoregulation mechanism for regulating the temperature of the 2nd substrate kept by the 2nd maintaining part.
7. a mating system, it has the coupling device described in claim 1 or 2, it is characterized in that,
This mating system comprises:
Treating stations, it has described coupling device; And
Input/output station, it can possess multiple the 1st substrates, multiple the 2nd substrates and coincidence substrate that multiple are engaged by the 1st substrate and the 2nd substrate and respectively relative to described treating stations input and output the 1st substrate, the 2nd substrate and coincidence substrate,
Described treating stations comprises:
Surface modification device, it is for the modifying surface that will be engaged to the 1st substrate and the 2nd substrate;
Surface hydrophilic gasifying device, it carries out modified surface hydrophilic for making the described surface modification device that utilizes of the 1st substrate and the 2nd substrate; And
Conveying device, it is for carrying the 1st substrate, the 2nd substrate and coincidence substrate relative to described surface modification device, described surface hydrophilic gasifying device and described coupling device,
In described coupling device, carry out the 1st substrate of surface hydrophilic by utilizing described surface hydrophilic gasifying device and the 2nd substrate is engaged with each other.
8. a joint method, in this joint method, uses coupling device to be engaged with each other by substrate, it is characterized in that,
This coupling device comprises:
1st maintaining part, the 1st substrate adsorption is held in lower surface for carrying out vacuum attraction to the 1st substrate by it;
2nd maintaining part, it is located at the below of described 1st maintaining part, the 2nd substrate adsorption is held in upper surface for carrying out vacuum attraction to the 2nd substrate; And
Promote component, it is located at described 1st maintaining part, for pressing the central part of the 1st substrate,
Described 2nd maintaining part there is main part for carrying out vacuum attraction to the 2nd substrate and be located at described main part and and multiple pins of touching of the back face of the 2nd substrate,
The apical position being located at the described pin of the central part of described main part higher than the apical position of described pin of peripheral part being located at described main part,
Described joint method comprises following operation:
1st keeps operation, keeps, in operation, utilizing described 1st maintaining part to keep the 1st substrate the 1st;
2nd keeps operation, keeps in operation the 2nd, utilizes described 2nd maintaining part to keep the 2nd substrate in the mode making the central part of the 2nd substrate and give prominence to upward;
Arrangement step afterwards, in this arrangement step, by the 1st substrate kept by described 1st maintaining part and the 2nd substrate relative configuration kept by described 2nd maintaining part;
Pressing process afterwards, in this pressing process, makes described promotion component decline and utilizes the central part of this promotion component to the central part of the 1st substrate and the 2nd substrate press and the central part of the central part of the 1st substrate and the 2nd substrate is abutted against; And
Bonding process afterwards, in this bonding process, under the state making the central part of the central part of the 1st substrate and the 2nd substrate abut against, stop utilizing described 1st maintaining part to carry out vacuum attraction to the 1st substrate, from the central part of the 1st substrate toward the outside perimembranous go the 1st substrate and the 2nd substrate to engage successively.
9. joint method according to claim 8, is characterized in that,
Described main part is divided into inside region and the exterior lateral area of concentric circles,
The apical position being located at described multiple pin of described inside region goes and step-down towards radial outside,
The apical position being located at described multiple pin of described exterior lateral area goes and step-down towards radial outside,
The change relative to radial distance being less than the apical position of multiple pin described in described exterior lateral area relative to the change of radial distance of the apical position of multiple pin described in described inside region,
Keep in operation the described 2nd, the surface along described 2nd maintaining part keeps the 2nd substrate.
10. joint method according to claim 8 or claim 9, is characterized in that,
Described main part is divided into the territory, multiple area in which the goods are in great demand in concentric circles,
In territory, described multiple area in which the goods are in great demand, the interval of the described multiple pin in the territory, area in which the goods are in great demand of inner side is less than the interval of the described multiple pin in the territory, area in which the goods are in great demand in outside,
In described pressing process, the part that be supported on the area in which the goods are in great demand territory of described inner side of described promotion component to the central part of the 1st substrate and the 2nd substrate is utilized to press and the part being supported on the territory, area in which the goods are in great demand of described inner side of the central part of the 1st substrate and the 2nd substrate is abutted against.
11. joint methods according to claim 8 or claim 9, is characterized in that,
Described 2nd maintaining part also has rib, and this rib is concentric circles and ring-type is located at described main part and from this main part projection,
Described 2nd maintaining part can be set to carry out vacuum attraction to the 2nd substrate in each region in the distributing area in the outside of distributing area in the inner side of described rib and described rib,
Keep in operation the described 2nd, at distributing area place absorption maintenance the 2nd substrate of described inner side, afterwards, at distributing area place absorption maintenance the 2nd substrate in described outside.
12. joint methods according to claim 8 or claim 9, is characterized in that,
In described bonding process, the temperature of thermoregulation mechanism to the 2nd substrate being located at described 2nd maintaining part is utilized to regulate, while the 1st substrate and the 2nd substrate are engaged.
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107611071A (en) * 2016-07-12 2018-01-19 东京毅力科创株式会社 Mating system
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JP2019135784A (en) * 2019-04-17 2019-08-15 エーファウ・グループ・エー・タルナー・ゲーエムベーハー Apparatus and method for joining substrate
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US11282706B2 (en) 2016-03-22 2022-03-22 Ev Group E. Thallner Gmbh Device and method for bonding of substrates

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Publication number Priority date Publication date Assignee Title
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0415340A1 (en) * 1989-08-28 1991-03-06 Kabushiki Kaisha Toshiba Method and apparatus for bonding semiconductor substrates
US5523254A (en) * 1992-05-25 1996-06-04 Sony Corporation Method for production of SOI transistor device and SOI transistor
CN1209644A (en) * 1997-08-27 1999-03-03 佳能株式会社 Substrate treatment device, substrate supporting device, and method for treatingand mfg. of substrate therefor
JP5538613B1 (en) * 2013-11-13 2014-07-02 東京エレクトロン株式会社 Joining apparatus and joining system
US20140208557A1 (en) * 2013-01-25 2014-07-31 Tokyo Electron Limited Joining device and joining system

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1358871A (en) 1971-06-25 1974-07-03 Pye Ltd Crane load indicator arrangement
KR940009993A (en) * 1992-10-08 1994-05-24 이헌조 Automatic VRL Control Device According to Telephone Line Condition
JPH10106907A (en) * 1996-10-01 1998-04-24 Canon Inc Solid phase junctioning method
CN1275082C (en) * 2002-10-28 2006-09-13 爱德牌工程有限公司 Pressure connecting device for connection engineering of LCD device
US7275577B2 (en) * 2002-11-16 2007-10-02 Lg.Philips Lcd Co., Ltd. Substrate bonding machine for liquid crystal display device
JP2012175043A (en) * 2011-02-24 2012-09-10 Tokyo Electron Ltd Joining device, joining system, joining method, program and computer storage medium
EP2704182B1 (en) * 2011-04-26 2018-01-03 Nikon Corporation Substrate bonding apparatus and substrate bonding method
JP5606429B2 (en) * 2011-12-08 2014-10-15 東京エレクトロン株式会社 Joining method, program, computer storage medium, joining apparatus and joining system
JP2013187393A (en) * 2012-03-08 2013-09-19 Tokyo Electron Ltd Bonding device and bonding method
JP5626736B2 (en) * 2012-03-15 2014-11-19 東京エレクトロン株式会社 Joining apparatus, joining system, joining method, program, and computer storage medium
US20130312907A1 (en) * 2012-05-23 2013-11-28 Lg Display Co., Ltd. Substrate-bonding apparatus for display device and method for manufacturing bonded substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0415340A1 (en) * 1989-08-28 1991-03-06 Kabushiki Kaisha Toshiba Method and apparatus for bonding semiconductor substrates
US5523254A (en) * 1992-05-25 1996-06-04 Sony Corporation Method for production of SOI transistor device and SOI transistor
CN1209644A (en) * 1997-08-27 1999-03-03 佳能株式会社 Substrate treatment device, substrate supporting device, and method for treatingand mfg. of substrate therefor
US20140208557A1 (en) * 2013-01-25 2014-07-31 Tokyo Electron Limited Joining device and joining system
JP5538613B1 (en) * 2013-11-13 2014-07-02 東京エレクトロン株式会社 Joining apparatus and joining system

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11955339B2 (en) 2016-03-22 2024-04-09 Ev Group E. Thallner Gmbh Device and method for bonding of substrates
EP3433875B1 (en) 2016-03-22 2022-05-04 EV Group E. Thallner GmbH Method for bonding substrates
US11282706B2 (en) 2016-03-22 2022-03-22 Ev Group E. Thallner Gmbh Device and method for bonding of substrates
CN107611071A (en) * 2016-07-12 2018-01-19 东京毅力科创株式会社 Mating system
CN107611071B (en) * 2016-07-12 2023-04-07 东京毅力科创株式会社 Joining system
CN109496345A (en) * 2016-08-12 2019-03-19 Ev 集团 E·索尔纳有限责任公司 For method and sample arm through control ground bonded substrate
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CN111566782A (en) * 2018-01-17 2020-08-21 东京毅力科创株式会社 Substrate processing apparatus and substrate processing method
CN111615739A (en) * 2018-01-23 2020-09-01 东京毅力科创株式会社 Substrate processing apparatus and substrate processing method
CN111615739B (en) * 2018-01-23 2024-06-07 东京毅力科创株式会社 Substrate processing apparatus and substrate processing method
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CN113543920A (en) * 2019-03-14 2021-10-22 东京毅力科创株式会社 Joining system and joining method
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CN110911334A (en) * 2019-11-13 2020-03-24 东莞普莱信智能技术有限公司 Positioning and laminating device and method for miniature electronic element

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