CN105355753A - 一种玻璃基板led灯丝 - Google Patents
一种玻璃基板led灯丝 Download PDFInfo
- Publication number
- CN105355753A CN105355753A CN201510731038.0A CN201510731038A CN105355753A CN 105355753 A CN105355753 A CN 105355753A CN 201510731038 A CN201510731038 A CN 201510731038A CN 105355753 A CN105355753 A CN 105355753A
- Authority
- CN
- China
- Prior art keywords
- glass substrate
- led
- bare chip
- pole
- silk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 61
- 239000011521 glass Substances 0.000 title claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 15
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 5
- 241000218202 Coptis Species 0.000 claims description 21
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 17
- 238000005516 engineering process Methods 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000012858 packaging process Methods 0.000 abstract 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 13
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- -1 copper Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000011324 bead Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
本发明提供一种玻璃基板LED灯丝,包括玻璃基板,该玻璃基板上设置一层ITO薄膜层,在所述ITO薄膜层上通过刻蚀工艺形成线路层,以及在所述玻璃基板上形成多个固晶区,多个正装LED裸芯片设置在所述固晶区内,所述多个正装LED裸芯片以金线键合的方式串接在所述线路层中;在所述玻璃基板的正面和反面都设有荧光层;在所述线路层设有电阻图形并通过溅射工艺在其上沉积ITO材料形成电阻。采用本发明的技术方案,由于采用玻璃基板,从而使LED芯片真正实现360°出光,大大提升了LED灯丝的立体出光效果;由于将正装LED裸芯片直接封装在玻璃基板上,大大缩小了LED灯丝的尺寸,也简化了LED封装工艺。
Description
技术领域
本发明涉及LED技术领域,尤其涉及一种玻璃基板LED灯丝。
背景技术
随着LED技术的不断成熟,传统白炽灯将逐渐被LED灯丝灯所取代。为了增加出光面积和角度,LED灯丝灯通常由多条LED灯丝相互拼接组成。现有技术中,LED灯丝通常采用金属基板等非透光基板,只能单面透光,其单根LED灯丝的出光角度最多只能为180°,这大大限制了LED的发光效果。同时现有技术中,LED灯丝上的LED芯片通常采用已封装好的LED灯珠焊接在基板上,不仅增加了LED灯丝的尺寸,同时增加了LED灯丝制备工艺的复杂度。另外,LED灯丝上的电阻元件通常采用贴片电阻以焊接的方式固定在LED灯丝上,贴片电阻的一致性和稳定性存在无法得到保证,尤其在LED灯丝长时间使用的情况下,会极大影响LED灯丝的寿命,同时也增加了LED灯丝制备工艺的复杂度。
故,针对目前现有技术中存在的上述缺陷,实有必要进行研究,以提供一种方案,解决现有技术中存在的缺陷。
发明内容
为了解决现有技术存在的问题,本发明的目的在于提供一种用于LED灯丝并使其实现360°出光的玻璃基板LED灯丝。
为了克服现有技术的缺陷,本发明的技术方案为:
一种玻璃基板LED灯丝,包括玻璃基板,该玻璃基板上设置一层ITO薄膜层,在所述ITO薄膜层上通过刻蚀工艺形成线路层,以及在所述玻璃基板上形成多个固晶区,多个正装LED裸芯片设置在所述固晶区内,所述多个正装LED裸芯片以金线键合的方式串接在所述线路层中;在所述玻璃基板的正面和反面都设有荧光层;在所述线路层的端部设有电极,所述电极用于与外接驱动电源相连接;在所述线路层设有电阻图形并通过溅射工艺在其上沉积ITO材料形成电阻。
优选地,所述ITO薄膜层通过溅射工艺形成在所述玻璃基板上。
优选地,所述ITO薄膜层通过喷涂工艺形成在所述玻璃基板上。
优选地,根据所述电阻的阻值控制在所述线路层的电阻图形上沉积相应量的ITO材料,从而实现设置不同阻值的电阻。
优选地,所述玻璃基板为长条形,所述电极设置在长条形玻璃基板的两端。
优选地,所述正装LED裸芯片通过固晶胶固定在所述固晶区。
优选地,所述ITO薄膜层为35μm~280μm。
优选地,所述线路层在所述固晶区两端区域分别设有金线焊点,所述正装LED裸芯片上设有P极和N极。
优选地,通过金线使所述正装LED裸芯片的P极或N极与所述线路层上的金线焊点电气连接。
优选地,正装LED裸芯片的N极通过金线与其后级的正装LED裸芯片的P极电气连接,或者正装LED裸芯片的P极通过金线与其前级的正装LED裸芯片的N极电气连接。
相对于现有技术,采用本发明的技术方案,由于采用玻璃基板,从而使LED芯片真正实现360°出光,大大提升了LED灯丝的立体出光效果;由于将正装LED裸芯片直接封装在玻璃基板上,大大缩小了LED灯丝的尺寸,也简化了LED封装工艺;同时导电层采用ITO材料,其电阻率远大于铜等金属,故可在线路层上直接沉积ITO材料形成电阻,从而不需要焊接电阻元件,并保证了电阻元件的一致性和稳定性,从而延长LED灯丝的使用寿命。
附图说明
图1为本发明实施例提供的一种玻璃基板LED灯丝的结构示意图。
图2为本发明实施例提供的一种玻璃基板LED灯丝的平面结构示意图。
图3为本发明实施例提供的一种玻璃基板LED灯丝另一种实施方式的平面结构示意图。
具体实施方式
以下是本发明的具体实施例并结合附图,对本发明的技术方案作进一步的描述,但本发明并不限于这些实施例。
为了克服现有技术存在的缺陷,请参阅图1,为本发明实施例提供的一种玻璃基板LED灯丝的结构示意图,包括玻璃基板1,玻璃基板1是一块薄玻璃片,其表面非常光滑,透光率在95%以上。该玻璃基板1上设置一层ITO薄膜层,一层ITO(氧化铟锡)薄膜层,ITO薄膜层是通过溅射工艺或者通过喷涂工艺形成在所述玻璃基板1上,其厚度为35μm~280μm。材料ITO(氧化铟锡)同时具有优良电学传导和光学透明的特性,作为透明传导镀膜应用广泛。由于采用玻璃基板,从而使LED灯丝真正实现360°出光,大大提升了LED灯丝的立体出光效果。
在玻璃基板1上设置ITO薄膜层作为导电层,其作用类似于现有技术中的铜箔层。通过光刻胶掩膜蚀刻工艺可将电路图形印制在ITO薄膜层上,也即在ITO薄膜层上通过刻蚀工艺形成线路层2,同时通过刻蚀工艺在玻璃基板1上形成固晶区3,固晶区3用于设置正装LED裸芯片4,多个正装LED裸芯片4通过固晶胶设置在所述固晶区3内,并以金线键合的方式串接在所述线路层2中。金线键合工艺的好坏直接影响LED灯丝的光电性能及可靠性,金线焊接时要形成一定的弧度,不能直接跨过LED裸芯片的P极或者N极,否则容易遮挡LED射出光线,降低光通量,影响产品的光学性能。在玻璃基板1的正面和反面分别设置由荧光材料形成的荧光层,由于玻璃基板具有反向透光性,通过调节玻璃基板1正面和反面的荧光材料配方,从而达到正反面均匀的立体发光LED灯丝。在所述线路层2的端部设有电极6,所述电极6用于与外接驱动电源相连接;在一种优选实施方式中,玻璃基板1为长条形,电极6设置在长条形玻璃基板1的两端。
在所述线路层2设有电阻图形并通过溅射工艺在其上沉积ITO材料形成电阻5。由于ITO材料的电阻率远大于铜等金属,故可以在ITO薄膜层上直接设置电阻5。即在电路图形的电阻元件位置,根据电阻5的阻值控制在所述线路层2相对应的电阻图形以及在其上沉积相应量的ITO材料,从而实现设置不同阻值的电阻。根据其阻值的大小由电阻图形的大小以及所沉积ITO材料的厚度决定,可以根据ITO材料的电阻率计算得出。由于在ITO薄膜层上直接形成电阻5,大大提升了电阻元件的一致性和稳定性,同时不需要焊接电阻元件,大大提升LED灯丝的性能和使用寿命。
参见图2,本发明实施例提供的一种玻璃基板LED灯丝的平面结构示意图,线路层2在固晶区两端区域分别设有金线焊点7,所述正装LED裸芯片4上设有P极和N极。通过金线8使所述正装LED裸芯片4的P极或N极与所述线路层2上的金线焊点7电气连接。
参见图3,本发明实施例提供的一种玻璃基板LED灯丝另一种实施方式的平面结构示意图,正装LED裸芯片4的N极通过金线8与其后级的正装LED裸芯片的P极电气连接,或者正装LED裸芯片的P极通过金线8与其前级的正装LED裸芯片的N极电气连接。从而使LED裸芯片4通过金线8依次串联起来,大大简化了LED灯丝的封装工艺,提高LED灯丝的稳定性。
以上实施例的说明只是用于帮助理解本发明的方法及其核心思想。应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以对本发明进行若干改进和修饰,这些改进和修饰也落入本发明权利要求的保护范围内。对这些实施例的多种修改对本领域的专业技术人员来说是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下在其它实施例中实现。因此,本发明将不会被限制于本文的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。
Claims (10)
1.一种玻璃基板LED灯丝,其特征在于,包括玻璃基板,该玻璃基板上设置一层ITO薄膜层,在所述ITO薄膜层上通过刻蚀工艺形成线路层,以及在所述玻璃基板上形成多个固晶区,多个正装LED裸芯片设置在所述固晶区内,所述多个正装LED裸芯片以金线键合的方式串接在所述线路层中;在所述玻璃基板的正面和反面都设有荧光层;在所述线路层的端部设有电极,所述电极用于与外接驱动电源相连接;在所述线路层设有电阻图形并通过溅射工艺在其上沉积ITO材料形成电阻。
2.如权利要求1所述的玻璃基板LED灯丝,其特征在于,所述ITO薄膜层通过溅射工艺形成在所述玻璃基板上。
3.如权利要求1所述的玻璃基板LED灯丝,其特征在于,所述ITO薄膜层通过喷涂工艺形成在所述玻璃基板上。
4.如权利要求1所述的玻璃基板LED灯丝,其特征在于,根据所述电阻的阻值控制在所述线路层的电阻图形上沉积相应量的ITO材料,从而实现设置不同阻值的电阻。
5.如权利要求1所述的玻璃基板LED灯丝,其特征在于,所述玻璃基板为长条形,所述电极设置在长条形玻璃基板的两端。
6.如权利要求1所述的玻璃基板LED灯丝,其特征在于,所述正装LED裸芯片通过固晶胶固定在所述固晶区。
7.如权利要求1所述的玻璃基板LED灯丝,其特征在于,所述ITO薄膜层为35μm~280μm。
8.如权利要求1所述的玻璃基板LED灯丝,其特征在于,所述线路层在所述固晶区两端区域分别设有金线焊点,所述正装LED裸芯片上设有P极和N极。
9.如权利要求8所述的玻璃基板LED灯丝,其特征在于,通过金线使所述正装LED裸芯片的P极或N极与所述线路层上的金线焊点电气连接。
10.如权利要求8所述的玻璃基板LED灯丝,其特征在于,正装LED裸芯片的N极通过金线与其后级的正装LED裸芯片的P极电气连接,或者正装LED裸芯片的P极通过金线与其前级的正装LED裸芯片的N极电气连接。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510731038.0A CN105355753A (zh) | 2015-10-31 | 2015-10-31 | 一种玻璃基板led灯丝 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510731038.0A CN105355753A (zh) | 2015-10-31 | 2015-10-31 | 一种玻璃基板led灯丝 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105355753A true CN105355753A (zh) | 2016-02-24 |
Family
ID=55331679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510731038.0A Pending CN105355753A (zh) | 2015-10-31 | 2015-10-31 | 一种玻璃基板led灯丝 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105355753A (zh) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1224510A (zh) * | 1997-04-21 | 1999-07-28 | 精工爱普生株式会社 | 液晶显示装置、液晶显示装置的制造方法及电子仪器 |
CN102376895A (zh) * | 2011-06-27 | 2012-03-14 | 昆山工研院新型平板显示技术中心有限公司 | Oled照明基板及其制造方法 |
CN103280510A (zh) * | 2013-05-27 | 2013-09-04 | 立达信绿色照明股份有限公司 | Led封装结构及其封装方法 |
CN103325776A (zh) * | 2012-03-22 | 2013-09-25 | 光芯科技股份有限公司 | 发光装置 |
CN104319342A (zh) * | 2014-10-21 | 2015-01-28 | 深圳市瑞丰光电子股份有限公司 | Led灯丝 |
CN204230302U (zh) * | 2014-11-14 | 2015-03-25 | 浙江英特来光电科技有限公司 | 无焊线led灯丝 |
CN205122631U (zh) * | 2015-10-31 | 2016-03-30 | 嘉兴市上村电子有限公司 | 一种玻璃基板led灯丝 |
-
2015
- 2015-10-31 CN CN201510731038.0A patent/CN105355753A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1224510A (zh) * | 1997-04-21 | 1999-07-28 | 精工爱普生株式会社 | 液晶显示装置、液晶显示装置的制造方法及电子仪器 |
CN102376895A (zh) * | 2011-06-27 | 2012-03-14 | 昆山工研院新型平板显示技术中心有限公司 | Oled照明基板及其制造方法 |
CN103325776A (zh) * | 2012-03-22 | 2013-09-25 | 光芯科技股份有限公司 | 发光装置 |
US20130248889A1 (en) * | 2012-03-22 | 2013-09-26 | Kun Hsin Technology Inc. | Light emitting device |
CN103280510A (zh) * | 2013-05-27 | 2013-09-04 | 立达信绿色照明股份有限公司 | Led封装结构及其封装方法 |
CN104319342A (zh) * | 2014-10-21 | 2015-01-28 | 深圳市瑞丰光电子股份有限公司 | Led灯丝 |
CN204230302U (zh) * | 2014-11-14 | 2015-03-25 | 浙江英特来光电科技有限公司 | 无焊线led灯丝 |
CN205122631U (zh) * | 2015-10-31 | 2016-03-30 | 嘉兴市上村电子有限公司 | 一种玻璃基板led灯丝 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105226167A (zh) | 一种全角度发光的柔性led灯丝及其制造方法 | |
JP2009532834A (ja) | 均一な発光を有する大エリアoled | |
JP2008505509A (ja) | 透明発光装置及びその製造方法 | |
WO2016047132A1 (ja) | 発光モジュール | |
CN105782789A (zh) | 一种fpc/cob灯带及其制作方法 | |
CN112908974B (zh) | 一种组合3d-led显示模组 | |
CN104347610A (zh) | 嵌入式led器件及其制作方法和发光设备 | |
CN105591003A (zh) | 一种led芯片电极及其制造方法 | |
CN101963288A (zh) | 可提高发光效率及控制出光角度的发光结构及其制作方法 | |
CN205159355U (zh) | 一种透明陶瓷基板led灯丝 | |
CN105355755A (zh) | 一种基于玻璃基板的led灯丝 | |
CN205122631U (zh) | 一种玻璃基板led灯丝 | |
CN205140981U (zh) | 一种蓝宝石基板led灯丝 | |
CN205141011U (zh) | 一种基于玻璃基板的led灯丝 | |
CN205877838U (zh) | 一种fpc/cob灯带 | |
CN105405950A (zh) | 一种透明陶瓷基板led灯丝 | |
CN210519046U (zh) | 一种pcb封装结构 | |
CN105355753A (zh) | 一种玻璃基板led灯丝 | |
CN205140968U (zh) | 一种基于透明陶瓷基板的led灯丝 | |
CN105355623A (zh) | 一种基于透明陶瓷基板的led灯丝 | |
CN106783819A (zh) | 一种柔性灯丝及其制备方法 | |
CN205141009U (zh) | 一种用于led灯丝的玻璃基线路板 | |
CN204230302U (zh) | 无焊线led灯丝 | |
CN205140980U (zh) | 一种基于蓝宝石基板的led灯丝 | |
TW200826320A (en) | Light-emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160224 |
|
RJ01 | Rejection of invention patent application after publication |