CN105355734A - Light emitting diode epitaxial wafer and fabrication method thereof - Google Patents
Light emitting diode epitaxial wafer and fabrication method thereof Download PDFInfo
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- CN105355734A CN105355734A CN201510703817.XA CN201510703817A CN105355734A CN 105355734 A CN105355734 A CN 105355734A CN 201510703817 A CN201510703817 A CN 201510703817A CN 105355734 A CN105355734 A CN 105355734A
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 abstract description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 66
- 229910002601 GaN Inorganic materials 0.000 description 65
- 239000013078 crystal Substances 0.000 description 12
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 230000005855 radiation Effects 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light emitting diode epitaxial wafer and a fabrication method thereof, belonging to the technical field of a semiconductor. The light emitting diode epitaxial wafer comprises a substrate and a non-doped GaN layer, an N-type GaN layer, a multiple quantum well layer, a P-type AlGaN electronic barrier layer, a P-type superlattice layer and a P-type GaN layer which are sequentially stacked on the substrate, wherein the P-type superlattice layer comprises a plurality of P-type superlattice sub layers, each P-type superlattice sub layer comprises a P-type InGaN layer and a P-type GaN layer, and the luminous wavelength of the P-type superlattice layer is the same as the luminous wavelength of the multiple quantum well layer. In the light emitting diode epitaxial wafer, the P-type superlattice layer is stacked between the P-type AlGaN electronic barrier layer and the P-type GaN layer, electrons in the N-type GaN layer cross over the P-type AlGaN electronic barrier layer to reach the P-type superlattice layer and are effectively recombined with holes of the P-type GaN layer injected to the P-type superlattice layer in the P-type superlattice layer, and the luminous efficiency of a light emitting diode (LED) is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of LED epitaxial slice and preparation method thereof.
Background technology
Gallium nitride (GaN) is the Typical Representative of third generation semiconductor material with wide forbidden band, and the physics and chemistry characteristic of its excellence makes it have very great application prospect in the field such as microelectronic component and opto-electronic device.GaN base light-emitting diode (LightEmittingDiode is called for short LED) has the characteristic that volume is little, brightness is high, energy consumption is little, is widely used in display screen, backlight and lighting field.
Epitaxial wafer is the vitals making LED.Existing LED epitaxial slice comprises substrate and is sequentially laminated on layer of undoped gan, N-type GaN layer, multiple quantum well layer, P type AlGaN electronic barrier layer and the P type GaN layer on substrate.Wherein, multiple quantum well layer comprises GaN layer and the InGaN layer of alternating growth.
Realizing in process of the present invention, inventor finds that prior art at least exists following problem:
When Bulk current injection, the electronics in N-type GaN layer is easily crossed P type AlGaN electronic barrier layer and is reached P type GaN layer, and carries out non-effective radiation recombination with the hole in P type GaN layer.If strengthen the barrier effect of P type AlGaN electronic barrier layer, then the efficiency of multiple quantum well layer is injected in the hole that can reduce in P type GaN layer, reduces combined efficiency, and therefore when Bulk current injection, the combined efficiency of the LED of the epitaxial wafer making of existing structure is lower.
Summary of the invention
In order to solve prior art when Bulk current injection, the problem that the combined efficiency of the LED that the epitaxial wafer of existing structure makes is lower, embodiments provides a kind of LED epitaxial slice and preparation method thereof.Described technical scheme is as follows:
On the one hand, embodiments provide a kind of LED epitaxial slice, described LED epitaxial slice comprises substrate, and the layer of undoped gan stacked gradually over the substrate, N-type GaN layer, multiple quantum well layer, P type AlGaN electronic barrier layer and P type GaN layer, described LED epitaxial slice also comprises the P type superlattice layer be layered between described P type AlGaN electronic barrier layer and described P type GaN layer, described P type superlattice layer comprises some P type superlattice sublayers, described P type superlattice sublayer comprises P type InGaN layer and P type GaN layer, the emission wavelength of described P type superlattice layer is identical with the emission wavelength of described multiple quantum well layer.
Alternatively, the thickness of the P type InGaN layer in described P type superlattice sublayer is 2-3nm.
Alternatively, the thickness of the P type GaN layer in described P type superlattice sublayer is 3-5nm.
Alternatively, the number of plies of described P type superlattice sublayer is 1-3 layer.
Alternatively, the P type InGaN layer in described P type superlattice sublayer is layered in the P type GaN layer in described P type superlattice sublayer.
On the other hand, embodiments provide a kind of manufacture method of LED epitaxial slice, described manufacture method comprises:
Substrate is formed layer of undoped gan, N-type GaN layer, multiple quantum well layer, P type AlGaN electronic barrier layer, P type superlattice layer and P type GaN layer successively, described P type superlattice layer comprises some P type superlattice sublayers, described P type superlattice sublayer comprises P type InGaN layer and P type GaN layer, and the emission wavelength of described P type superlattice layer is identical with the emission wavelength of described multiple quantum well layer.
Alternatively, the thickness of the P type InGaN layer in described P type superlattice sublayer is 2-3nm.
Alternatively, the thickness of the P type GaN layer in described P type superlattice sublayer is 3-5nm.
Alternatively, the number of plies of described P type superlattice sublayer is 1-3 layer.
Alternatively, the P type InGaN layer in described P type superlattice sublayer is formed on the P type GaN in described P type superlattice sublayer.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By P type superlattice layer stacked between P type AlGaN electronic barrier layer and P type GaN layer, P type superlattice layer comprises some P type superlattice sublayers, P type superlattice sublayer comprises P type InGaN layer and P type GaN layer, when Bulk current injection, electronics in N-type GaN layer crosses P type AlGaN electronic barrier layer can reach P type superlattice layer, and in P type superlattice layer, carry out effective compound with the hole of P type GaN layer implanting p-type superlattice layer, and the emission wavelength of P type superlattice layer is identical with the emission wavelength of multiple quantum well layer, improves the combined efficiency of LED.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of a kind of LED epitaxial slice that the embodiment of the present invention one provides;
Fig. 2 is the flow chart of the manufacture method of a kind of LED epitaxial slice that the embodiment of the present invention two provides.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Embodiment one
Embodiments provide a kind of LED epitaxial slice, see Fig. 1, this LED epitaxial slice comprises substrate 1 and stacks gradually layer of undoped gan 2, N-type GaN layer 3, multiple quantum well layer 4, P type AlGaN electronic barrier layer 5, P type superlattice layer 6 and P type GaN layer 7 on substrate 1.
In the present embodiment, P type superlattice layer 6 comprises type superlattice sublayer, some P type superlattice sublayers 60, P 60 and comprises P type InGaN layer 61 and P type GaN layer 62.The emission wavelength of P type superlattice layer 6 is identical with the emission wavelength of multiple quantum well layer 4.Multiple quantum well layer 4 comprises InGaN layer and the GaN layer of alternating growth.
Particularly, P type InGaN layer 61 can for mixing the InGaN layer of Mg, and P type GaN layer 62 can for mixing the GaN layer of Mg.
It should be noted that, emission wavelength is relevant with the ratio of In/Ga and the thickness of InGaN, and the present invention can by the adjustment ratio of In/Ga and the thickness of InGaN, and the emission wavelength realizing P type superlattice layer 6 is identical with the emission wavelength of multiple quantum well layer 4.
Alternatively, the thickness of the P type InGaN layer 61 in P type superlattice sublayer 60 can be 2-3nm.When the thickness of the P type InGaN layer 61 in P type superlattice sublayer 60 is less than 2nm, the carrying capacity of InGaN to electronics and hole is limited, and radiation recombination efficiency is lower; When the thickness of the P type InGaN layer 61 in P type superlattice sublayer 60 is greater than 3nm, the mismatch of InGaN and GaN is comparatively large, and the crystal mass of P type superlattice layer 6 is poor.
Alternatively, the thickness of the P type GaN layer 62 in P type superlattice sublayer 60 can be 3-5nm.When the thickness of the P type GaN layer 62 in P type superlattice sublayer 60 is less than 3nm, GaN is inadequate to the protection of InGaN, and the crystal mass of P type superlattice layer 6 is poor; When the thickness of the P type GaN layer 62 in P type superlattice sublayer 60 is greater than 5nm, the mismatch of InGaN and GaN is comparatively large, and the crystal mass of P type superlattice layer 6 is also poor.
Alternatively, the number of plies of P type superlattice sublayer 60 can be 1-3 layer.When the number of plies of P type superlattice sublayer 60 is less than 1 layer, identical with existing epitaxial slice structure, when Bulk current injection, the combined efficiency of LED is lower; When the number of plies of P type superlattice sublayer 60 is greater than 3 layers, the stress between P type superlattice layer 6 and P type AlGaN electronic barrier layer 5 is excessive, P type superlattice layer 6 second-rate.
Alternatively, the P type InGaN layer 61 in P type superlattice sublayer 60 is layered in the P type GaN layer 62 in P type superlattice sublayer 60.
Easily know, the crystal lattice difference of GaN and AlGaN is less than the crystal lattice difference of InGaN and AlGaN, P type InGaN layer 61 in P type superlattice sublayer 60 is layered in the P type GaN layer 62 in P type superlattice sublayer 60, then being layered in P type superlattice layer 6, P type AlGaN electronic barrier layer 5 is P type GaN layer 62, make P type superlattice layer 6 less with the crystal lattice difference of P type AlGaN electronic barrier layer 5, the quality of P type superlattice layer 6 is better.
The embodiment of the present invention is by stacked P type superlattice layer between P type AlGaN electronic barrier layer and P type GaN layer, P type superlattice layer comprises some P type superlattice sublayers, P type superlattice sublayer comprises P type InGaN layer and P type GaN layer, when Bulk current injection, electronics in N-type GaN layer crosses P type AlGaN electronic barrier layer can reach P type superlattice layer, and in P type superlattice layer, carry out effective compound with the hole of P type GaN layer implanting p-type superlattice layer, and the emission wavelength of P type superlattice layer is identical with the emission wavelength of multiple quantum well layer, improve the combined efficiency of LED.And P type superlattice layer mouth can accumulate hole, be conducive to hole and cross P type AlGaN electronic barrier layer and carry out effective radiation recombination, further increase the combined efficiency of LED.
Embodiment two
Embodiments provide a kind of manufacture method of LED epitaxial slice, the LED epitaxial slice that this manufacture method provides for making embodiment one, see Fig. 2, this manufacture method comprises:
Step 201: form layer of undoped gan on substrate.
Step 202: form N-type GaN layer in layer of undoped gan.
Step 203: form multiple quantum well layer in N-type GaN layer.
In the present embodiment, multiple quantum well layer comprises InGaN layer and the GaN layer of alternating growth.
Step 204: form P type AlGaN electronic barrier layer on multiple quantum well layer.
Step 205: form P type superlattice layer on P type AlGaN electronic barrier layer.
In the present embodiment, P type superlattice layer comprises some P type superlattice sublayers, and P type superlattice sublayer comprises P type InGaN layer and P type GaN layer.The emission wavelength of P type superlattice layer is identical with the emission wavelength of multiple quantum well layer.
Particularly, P type InGaN layer can for mixing the InGaN layer of Mg, and P type GaN layer can for mixing the GaN layer of Mg.
Alternatively, the thickness of the P type InGaN layer in P type superlattice sublayer can be 2-3nm.When the thickness of the P type InGaN layer in P type superlattice sublayer is less than 2nm, the carrying capacity of InGaN to electronics and hole is limited, and radiation recombination efficiency is lower; When the thickness of the P type InGaN layer in P type superlattice sublayer is greater than 3nm, the mismatch of InGaN and GaN is comparatively large, and the crystal mass of P type superlattice layer is poor.
Alternatively, the thickness of the P type GaN layer in P type superlattice sublayer can be 3-5nm.When the thickness of the P type GaN layer in P type superlattice sublayer is less than 3nm, GaN is inadequate to the protection of InGaN, and the crystal mass of P type superlattice layer is poor; When the thickness of the P type GaN layer in P type superlattice sublayer is greater than 5nm, the mismatch of InGaN and GaN is comparatively large, and the crystal mass of P type superlattice layer is also poor.
Alternatively, the number of plies of P type superlattice sublayer can be 1-3 layer.When the number of plies of P type superlattice sublayer is less than 1 layer, identical with existing epitaxial slice structure, when Bulk current injection, the combined efficiency of LED is lower; When the number of plies of P type superlattice sublayer is greater than 3 layers, the stress between P type superlattice layer and P type AlGaN electronic barrier layer is excessive, P type superlattice layer second-rate.
Alternatively, the P type InGaN layer in P type superlattice sublayer is formed in the P type GaN layer in P type superlattice sublayer.
Easily know, the crystal lattice difference of GaN and AlGaN is less than the crystal lattice difference of InGaN and AlGaN, P type InGaN layer in P type superlattice sublayer is formed in the P type GaN layer in P type superlattice sublayer, then being layered in P type superlattice layer, P type AlGaN electronic barrier layer is P type GaN layer, make the crystal lattice difference of P type superlattice layer and P type AlGaN electronic barrier layer less, the quality of P type superlattice layer is better.
Particularly, this step 205 can comprise:
In metallo-organic compound chemical gaseous phase deposition (MetalOrganicChemicalVaporDeposition is called for short MOCVD) equipment, alternating growth mixes GaN and InGaN of CpMg.
Step 206: form P type GaN layer on P type superlattice layer.
The embodiment of the present invention is by stacked P type superlattice layer between P type AlGaN electronic barrier layer and P type GaN layer, P type superlattice layer comprises some P type superlattice sublayers, P type superlattice sublayer comprises P type InGaN layer and P type GaN layer, when Bulk current injection, electronics in N-type GaN layer crosses P type AlGaN electronic barrier layer can reach P type superlattice layer, and in P type superlattice layer, carry out effective compound with the hole of P type GaN layer implanting p-type superlattice layer, and the emission wavelength of P type superlattice layer is identical with the emission wavelength of multiple quantum well layer, improve the combined efficiency of LED.And P type superlattice layer mouth can accumulate hole, be conducive to hole and cross P type AlGaN electronic barrier layer and carry out effective radiation recombination, further increase the combined efficiency of LED.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a LED epitaxial slice, described LED epitaxial slice comprises substrate, and the layer of undoped gan stacked gradually over the substrate, N-type GaN layer, multiple quantum well layer, P type AlGaN electronic barrier layer and P type GaN layer, it is characterized in that, described LED epitaxial slice also comprises the P type superlattice layer be layered between described P type AlGaN electronic barrier layer and described P type GaN layer, described P type superlattice layer comprises some P type superlattice sublayers, described P type superlattice sublayer comprises P type InGaN layer and P type GaN layer, the emission wavelength of described P type superlattice layer is identical with the emission wavelength of described multiple quantum well layer.
2. LED epitaxial slice according to claim 1, is characterized in that, the thickness of the P type InGaN layer in described P type superlattice sublayer is 2-3nm.
3. LED epitaxial slice according to claim 1 and 2, is characterized in that, the thickness of the P type GaN layer in described P type superlattice sublayer is 3-5nm.
4. LED epitaxial slice according to claim 1 and 2, is characterized in that, the number of plies of described P type superlattice sublayer is 1-3 layer.
5. LED epitaxial slice according to claim 1 and 2, is characterized in that, the P type InGaN layer in described P type superlattice sublayer is layered in the P type GaN layer in described P type superlattice sublayer.
6. a manufacture method for LED epitaxial slice, is characterized in that, described manufacture method comprises:
Substrate is formed layer of undoped gan, N-type GaN layer, multiple quantum well layer, P type AlGaN electronic barrier layer, P type superlattice layer and P type GaN layer successively, described P type superlattice layer comprises some P type superlattice sublayers, described P type superlattice sublayer comprises P type InGaN layer and P type GaN layer, and the emission wavelength of described P type superlattice layer is identical with the emission wavelength of described multiple quantum well layer.
7. manufacture method according to claim 6, is characterized in that, the thickness of the P type InGaN layer in described P type superlattice sublayer is 2-3nm.
8. the manufacture method according to claim 6 or 7, is characterized in that, the thickness of the P type GaN layer in described P type superlattice sublayer is 3-5nm.
9. the manufacture method according to claim 6 or 7, is characterized in that, the number of plies of described P type superlattice sublayer is 1-3 layer.
10. the manufacture method according to claim 6 or 7, is characterized in that, the P type InGaN layer in described P type superlattice sublayer is formed on the P type GaN in described P type superlattice sublayer.
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| CN201510703817.XA CN105355734A (en) | 2015-10-26 | 2015-10-26 | Light emitting diode epitaxial wafer and fabrication method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108550676A (en) * | 2018-05-29 | 2018-09-18 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
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| CN101740693A (en) * | 2009-12-25 | 2010-06-16 | 武汉华灿光电有限公司 | Method for reducing luminous decay of III group nitride light-emitting diode |
| CN104064643A (en) * | 2014-06-24 | 2014-09-24 | 湘能华磊光电股份有限公司 | P-type epitaxial layer of LED, manufacturing method thereof and LED epitaxial wafer comprising thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740693A (en) * | 2009-12-25 | 2010-06-16 | 武汉华灿光电有限公司 | Method for reducing luminous decay of III group nitride light-emitting diode |
| CN104064643A (en) * | 2014-06-24 | 2014-09-24 | 湘能华磊光电股份有限公司 | P-type epitaxial layer of LED, manufacturing method thereof and LED epitaxial wafer comprising thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108550676A (en) * | 2018-05-29 | 2018-09-18 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
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Application publication date: 20160224 |