CN105352610A - Method for measuring GaAs-based semiconductor laser epitaxial wafer light-emitting wavelength and application thereof - Google Patents
Method for measuring GaAs-based semiconductor laser epitaxial wafer light-emitting wavelength and application thereof Download PDFInfo
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- CN105352610A CN105352610A CN201510821309.1A CN201510821309A CN105352610A CN 105352610 A CN105352610 A CN 105352610A CN 201510821309 A CN201510821309 A CN 201510821309A CN 105352610 A CN105352610 A CN 105352610A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 116
- 239000004065 semiconductor Substances 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000012360 testing method Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000005424 photoluminescence Methods 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims description 72
- 238000000576 coating method Methods 0.000 claims description 72
- 239000000463 material Substances 0.000 claims description 20
- 238000010998 test method Methods 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 230000003746 surface roughness Effects 0.000 claims description 8
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 230000000694 effects Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- -1 AlGaAs Chemical class 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
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Abstract
The invention relates to a method for measuring GaAs-based semiconductor laser epitaxial wafer light-emitting wavelength and application thereof. A GaAs-based semiconductor laser epitaxial wafer comprises a substrate, a lower wrapping layer, an active region, an upper wrapping layer and a contact layer from the bottom up in sequence. The method has the following specific steps: 1) growing a layer of dielectric film, non-absorbing the light emitted by the active region, on the surface of the GaAs-based semiconductor laser epitaxial wafer, wherein refractive index m of the dielectric film is larger than 1 and smaller than n, n being refractive index of the light, emitted by the GaAs-based semiconductor laser epitaxial wafer, in the GaAs, and the thickness d of the dielectric film is larger than 0 and equal to or smaller than lambda/2m, lambda being the wavelength of the light emitted by the GaAs-based semiconductor laser epitaxial wafer, and the surface of the dielectric film is rough; 2) carrying out routine photoluminescence test; and 3) removing the dielectric film. According to the method, the probability of total reflection when the light emitted by the GaAs-based semiconductor laser epitaxial wafer is incident to the air is greatly reduced, and the number of light rays escaping out of the epitaxial wafer is increased.
Description
Technical field
The present invention relates to a kind of method and the application thereof of testing GaAs base semiconductor laser epitaxial wafer emission wavelength, belong to semiconductor laser technical field of measurement and test.
Background technology
Semiconductor laser has that volume is little, the life-span is long, photoelectric transformation efficiency is high, be easy to the advantage such as compatible with integrated circuit, manufactures and the industry extensive application such as health care in optical communication, optical storage, industry.Wherein, research the earliest, performance preferably and application at present maximum be take GaAs the semiconductor laser of substrate.
The operation wavelength of semiconductor laser is determined by the semiconductor material that making devices is used.Conduction band and valence band is there is in semiconductor material, containing free-moving electronics above conduction band, and containing free-moving hole below valence band, between conduction band and valence band across a forbidden band, when Electron absorption light energy from valence band jump to go conduction band time, just the energy of light is become electricity, and with the electronics of electric energy from conduction band rebound valence band, the energy of electricity can be become light again, therefore, the energy gap of semiconductor material just determines the operation wavelength of device.What the development of material science made us that energy band engineering can be adopted semiconductor material can be with the cutting carrying out various exquisiteness, and the restriction making the operation wavelength of semiconductor photoelectric device break through material energy gap expands to wider scope.Be that substrate can be carried out epitaxially grown material and comprises the multi-element compounds such as AlGaAs, AlGaInP, InGaAsP with GaAs, therefore, the operation wavelength of GaAs base semiconductor laser is the shortest is red spectral band near 600nm, the longest can infrared band near 1000nm.
Wavelength is different, and the purposes of laser instrument is also different.The semiconductor laser of red spectral band is mainly used in the aspects such as laser display, industry instruction and location, laser medicine.At red spectral band, the visual sensitivity of human eye improves along with shortening of wavelength of light, and the susceptibility of such as human eye to 635nm light is 3 times of 660nm light.Therefore, the brightness of laser instrument is not only relevant also relevant with its wavelength with its power.Ensure the consistance of red laser brightness, must ensure that its consistent wavelength is good.808nm and the 980nm semiconductor laser of near-infrared band is mainly used in industry and manufactures and pumping.Due to the restriction of pumped material absorption spectra, obtain high pumping efficiency, the wavelength of pump laser will within the several nanometers near absorption peak.Relatively stricter to the wavelength requirement of laser instrument in such applications, must in the source making laser instrument, i.e. laser epitaxial sheet, carries out emission wavelength test and monitoring.
A kind of test macro improving photoluminescence test effect of semiconductor material
Chinese patent literature CN101949844B discloses a kind of test macro improving photoluminescence test effect of semiconductor material.The laser that the laser instrument of this system excites after catoptron conversion direction by lens focus direct irradiation on sample, the laser of sample reflection by paraboloidal mirror collect turn to collimation after send to spectral measurement system with angle pencil of ray form.Suitable emission wavelength can be selected according to the characteristic of semiconductor material, thus obtain higher photoluminescence intensity, promote photoluminescence power of test and improve the sensitivity tested.But this invention is just optimized for exciting light and testing tool, and the material if the light that material internal sends can not be escaped out, still tests the emission wavelength less than material.The upper surface contact layer of GaAs base semiconductor laser epitaxial wafer is generally heavy doping GaAs, and band gap is less, has absorption to the light that active area sends.As shown in Figure 1, when light is from GaAs layer injection surface, because GaAs refractive index is comparatively large, most of light can be totally reflected on surface, thus by GaAs layer or other epitaxial loayer absorb.For the ruddiness of 660nm wavelength, GaAs refractive index is up to 3.82, and the critical angle that total reflection occurs when light injects air from GaAs layer is only 15 °.The light that incident angle is less than 15 ° still has more than 1/3 and is reflected back toward epitaxial wafer inside, adds the absorption of surface Ga As layer to light, and the emergent light that common test equipment detector captures is little, is difficult to accurately test to the emission wavelength of epitaxial wafer.
GaAs base semiconductor laser epitaxial wafer comprise set gradually from the bottom to top substrate, under-clad layer, active area, top covering, contact layer, substrate is for being applicable to epitaxially grown GaAs single-chip, when the light that active area sends is from the injection of contact layer surface, major part vergence direction incident light can be totally reflected on contact layer surface, and vergence direction emergent light 10 can be got back to GaAs base semiconductor laser epitaxial wafer inside and finally be absorbed; Vertical direction emergent light still has more than 1/3 and is reflected back toward GaAs base semiconductor laser epitaxial wafer inside formation vertical direction reflected light, and is absorbed.Add the absorption of contact layer surface to light, the vertical direction emergent light that common test equipment detector captures is little, as shown in Figure 1.
The method of existing test GaAs base semiconductor laser epitaxial wafer emission wavelength is: eroded by contact layer, remaining top covering Refractive Index of Material is less, the cirtical angle of total reflection is comparatively large, and its band gap is greater than the band gap of active area materials simultaneously, can not be absorbed with the light that source region sends.Although the emission wavelength of epitaxial wafer can be tested, destroy the surface contact layer of epitaxial wafer, can not device be made, as shown in Figure 2.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of method of testing GaAs base semiconductor laser epitaxial wafer emission wavelength;
Present invention also offers a kind of GaAs base semiconductor laser epitaxial wafer for testing emission wavelength.
Terminological interpretation
Doping content, doping content described herein is atomic concentration, refers to the number shared by this atom in unit volume.
Technical scheme of the present invention is:
A kind of method of testing GaAs base semiconductor laser epitaxial wafer emission wavelength, described GaAs base semiconductor laser epitaxial wafer comprise set gradually from the bottom to top substrate, under-clad layer, active area, top covering, contact layer, described substrate is for being applicable to epitaxially grown GaAs single-chip, described under-clad layer and described top covering are the multi-element compounds mated with described substrate lattice, described active area is luminous zone, described contact layer is the contact layer forming Ohmic contact with metal electrode, and concrete steps comprise:
(1) deielectric-coating of the light that source region sends is not absorbed with at described GaAs base semiconductor laser epitaxial wafer superficial growth one deck, the span of the refractive index m of described deielectric-coating is 1 < m < n, n is the refractive index of light in GaAs that described GaAs base semiconductor laser epitaxial wafer sends; The wavelength of the span of the thickness d of described deielectric-coating to be 0 < d≤λ/2m, λ the be light that described GaAs base semiconductor laser epitaxial wafer sends; Described deielectric-coating rough surface;
(2) conventional photoluminescence test is carried out to the GaAs base semiconductor laser epitaxial wafer that step (1) obtains, obtain GaAs base semiconductor laser epitaxial wafer emission wavelength;
(3) described deielectric-coating is removed.
Described under-clad layer and described top covering are used for limiting the electronics of active area and photon.
Described conventional photoluminescence test, such as, utilizes PL photoluminescence test macro to carry out photoluminescence test.
The advantage herein designed is, deielectric-coating rough surface, and when the light that GaAs base semiconductor laser epitaxial wafer sends is in air, the probability that total reflection occurs reduces greatly, and the amount of light of GaAs base semiconductor laser epitaxial wafer of escaping out increases; The span of the refractive index m of deielectric-coating is 1 < m < n, and deielectric-coating refractive index is between air refraction and GaAs refractive index, and the deielectric-coating within the scope of this all has anti-reflection effect to emergent ray; The span of the thickness d of deielectric-coating is 0 < d≤λ/2m, and the deielectric-coating in this thickness range all has anti-reflection effect to emergent ray.
Preferred according to the present invention, after step (1) completes, at 100 ° of-300 ° of temperature, annealing in process is carried out to described GaAs base semiconductor laser epitaxial wafer.
The advantage herein designed is, the deielectric-coating crystal grain after annealing in process becomes large, and surfaceness also can become large, further reduces the probability that total reflection occurs vergence direction incident light.
Preferred according to the present invention, the value of the refractive index m of described deielectric-coating is the square root of n, and the thickness d of described deielectric-coating is λ/4m.
The advantage herein designed is, the value of the refractive index m of deielectric-coating is the square root of n, and the thickness d of deielectric-coating is λ/4m, can reach the antireflective effect close to being even 100% for vertical direction emergent light.
Preferred according to the present invention, described deielectric-coating surface roughness Ra is greater than 2nm.
Preferred according to the present invention, described deielectric-coating is the SiO of sputtering growth
2, Si
3n
4, Al
2o
3, ZrO
2.
The advantage herein designed is, the deielectric-coating of sputtering growth is generally polycrystalline structure, more coarse than epi-layer surface, and emergent ray is easily escaped out surface; Deielectric-coating is the SiO of sputtering growth
2, Si
3n
4, Al
2o
3, ZrO
2, band gap is comparatively large, does not absorb the light that GaAs base semiconductor laser epitaxial wafer sends; Refractive index, between air and GaAs, has anti-reflection effect to emergent ray.
According to the present invention preferably, the material of described under-clad layer and described top covering is any one in AlGaAs, AlGaInP or InGaAsP.
Preferred according to the present invention, the material of described active area is any one or strain any one of AlGaAs, AlGaInP, InGaAsP unmatched with described substrate lattice of AlGaAs, AlGaInP, the InGaAsP mated with described substrate lattice, and described active area emission wavelength is 600-1000nm.
Preferred according to the present invention, described contact layer is attached most importance to Doped GaAs.
A kind of GaAs base semiconductor laser epitaxial wafer for testing emission wavelength, comprise the substrate set gradually from the bottom to top, under-clad layer, active area, top covering, contact layer, described substrate is for being applicable to epitaxially grown GaAs single-chip, described under-clad layer and described top covering are the multi-element compounds mated with described substrate lattice, described active area is luminous zone, described contact layer is the contact layer forming Ohmic contact with metal electrode, described contact layer surface is provided with the deielectric-coating that one deck is not absorbed with the light that source region sends, the span of the refractive index m of described deielectric-coating is 1 < m < n, n is the refractive index of light in GaAs that described GaAs base semiconductor laser epitaxial wafer sends, the wavelength of the span of the thickness d of described deielectric-coating to be 0 < d≤λ/2m, λ the be light that described GaAs base semiconductor laser epitaxial wafer sends, described deielectric-coating rough surface.
Preferred according to the present invention, the value of the refractive index m of described deielectric-coating is the square root of n, and the thickness of described deielectric-coating is λ/4m, and described deielectric-coating surface roughness Ra is greater than 2nm.
Beneficial effect of the present invention is:
1, deielectric-coating rough surface of the present invention, the probability that total reflection occurs when the light that GaAs base semiconductor laser epitaxial wafer sends is in air reduces greatly, and the amount of light of epitaxial wafer of escaping out increases.
2, deielectric-coating refractive index m of the present invention is between air refraction and GaAs refractive index, the span of the thickness d of deielectric-coating is 0 < d≤λ/2m, play the effect of anti-reflection film, if refractive index is suitable, injection light on normal component can reach theoretic all through, there is no reflection loss.
3, after deielectric-coating of the present invention is removed, on the not impact of epitaxial wafer surface, can not destroy epitaxial slice structure, epitaxial wafer normally can make semiconductor laser.
Accompanying drawing explanation
Fig. 1 is structure and the beam projecting schematic diagram of GaAs base semiconductor laser epitaxial wafer of the present invention.
Fig. 2 is the beam projecting schematic diagram of existing test GaAs base semiconductor laser epitaxial wafer emission wavelength.
Fig. 3 is a kind of beam projecting schematic diagram testing GaAs base semiconductor laser epitaxial wafer emission wavelength of the present invention.
In figure, 1, substrate, 2, under-clad layer, 3, active area, 4, top covering, 5, contact layer, 6, vertical direction incident light, 7, vertical direction reflected light, 8, vertical direction emergent light, 9, vergence direction incident light, 10, vergence direction emergent light, 11, deielectric-coating.
Embodiment
Below in conjunction with Figure of description and embodiment, the present invention is further qualified, but is not limited thereto.
Embodiment 1
A kind of method of testing GaAs base semiconductor laser epitaxial wafer emission wavelength, described GaAs base semiconductor laser epitaxial wafer comprise set gradually from the bottom to top substrate 1, under-clad layer 2, active area 3, top covering 4, contact layer 5, described substrate 1 is for being applicable to epitaxially grown GaAs single-chip, and described under-clad layer 2 and described top covering 4 are Al
0.5ga
0.5as, described active area 3 is luminous zone, and described contact layer 5 is attached most importance to Doped GaAs, and the emission wavelength of GaAs base semiconductor laser epitaxial wafer is positioned near 800nm, as shown in Figure 1, concrete steps comprise for the structure of GaAs base semiconductor laser epitaxial wafer of the present invention and beam projecting schematic diagram:
(1) be not absorbed with the deielectric-coating 11 of the light that source region 3 sends at described GaAs base semiconductor laser epitaxial wafer superficial growth one deck, the value of the refractive index m of described deielectric-coating 11 is 1.45; The refractive index of the light that GaAs base semiconductor laser epitaxial wafer sends in GaAs is 3.68, and the value of the thickness d of described deielectric-coating 11 is 138nm, and described deielectric-coating 11 surface roughness Ra is 5nm; Described deielectric-coating 11 is the SiO of sputtering growth
2;
(2) conventional photoluminescence test is carried out to the GaAs base semiconductor laser epitaxial wafer that step (1) obtains, obtain GaAs base semiconductor laser epitaxial wafer emission wavelength;
(3) described deielectric-coating 11 is removed.
Described under-clad layer 2 and described top covering 4 are used for limiting the electronics of active area 3 and photon; Described contact layer 5 is attached most importance to Doped GaAs, forms Ohmic contact with metal electrode.
In this embodiment, deielectric-coating 11 surfaceness is much larger than the surfaceness of epitaxial loayer, and the probability that total reflection occurs vergence direction incident light 9 can reduce greatly, and vergence direction emergent light 10 can increase.Meanwhile, the SiO of growth sputtering
2after, the transmitance of vertical direction incident light 6 is increased to 94% from 66%, and vertical direction emergent light 8 also can increase.Thus the emission wavelength of semiconductor laser device epitaxial wafer can be tested.
Embodiment 2
A kind of method of testing GaAs base semiconductor laser epitaxial wafer emission wavelength, described GaAs base semiconductor laser epitaxial wafer comprise set gradually from the bottom to top substrate 1, under-clad layer 2, active area 3, top covering 4, contact layer 5, described substrate 1 is for being applicable to epitaxially grown GaAs single-chip, and described under-clad layer 2 and described top covering 4 are Al
0.5in
0.5p, described active area 3 is luminous zone, and described contact layer 5 is attached most importance to Doped GaAs, and the emission wavelength of GaAs base semiconductor laser epitaxial wafer is positioned near 660nm, as shown in Figure 1, concrete steps comprise for the structure of GaAs base semiconductor laser epitaxial wafer of the present invention and beam projecting schematic diagram:
(1) be not absorbed with the deielectric-coating 11 of the light that source region 3 sends at described GaAs base semiconductor laser epitaxial wafer superficial growth one deck, the value of the refractive index m of described deielectric-coating 11 is 2.01; The refractive index of the light that GaAs base semiconductor laser epitaxial wafer sends in GaAs is 3.82, and the value of the thickness d of described deielectric-coating 11 is 82nm, and described deielectric-coating 11 surface roughness Ra is 5nm; Described deielectric-coating 11 is the Si of sputtering growth
3n
4; At 200 ° of temperature, annealing in process is carried out to described GaAs base semiconductor laser epitaxial wafer;
(2) conventional photoluminescence test is carried out to the GaAs base semiconductor laser epitaxial wafer that step (1) obtains, obtain GaAs base semiconductor laser epitaxial wafer emission wavelength;
(3) described deielectric-coating 11 is removed.
Described under-clad layer 2 and described top covering 4 are used for limiting the electronics of active area 3 and photon; Described contact layer 5 is attached most importance to Doped GaAs, can form Ohmic contact with metal electrode.
In this embodiment, the Si of annealing in process
3n
4deielectric-coating 11 crystal grain becomes large, and surfaceness also can become large, further reduces the probability that total reflection occurs vergence direction incident light 9.Meanwhile, Si is grown
3n
4after, the transmitance of vertical direction incident light 6 is increased to 98% from 66%, and vertical direction emergent light 8 is no better than vertical direction incident light 6.Thus test can be stronger to the luminous spectrum of semiconductor laser device epitaxial wafer, and result is more accurate.
Embodiment 3
A kind of GaAs base semiconductor laser epitaxial wafer for testing emission wavelength, described GaAs base semiconductor laser epitaxial wafer comprise set gradually from the bottom to top substrate 1, under-clad layer 2, active area 3, top covering 4, contact layer 5, described substrate 1 is for being applicable to epitaxially grown GaAs single-chip, and described under-clad layer 2 and described top covering 4 are Al
0.5ga
0.5as, described active area 3 is luminous zone, described contact layer 5 is attached most importance to Doped GaAs, the emission wavelength of GaAs base semiconductor laser epitaxial wafer is positioned near 800nm, described contact layer 5 surface is provided with the deielectric-coating 11 that one deck is not absorbed with the light that source region 3 sends, and the value of the refractive index m of described deielectric-coating 11 is 1.45; The refractive index of the light that GaAs base semiconductor laser epitaxial wafer sends in GaAs is 3.68, and the value of the thickness d of described deielectric-coating 11 is 138nm, and described deielectric-coating 11 surface roughness Ra is 5nm; Described deielectric-coating 11 is the SiO of sputtering growth
2.
Embodiment 4
A kind of GaAs base semiconductor laser epitaxial wafer for testing emission wavelength, described GaAs base semiconductor laser epitaxial wafer comprise set gradually from the bottom to top substrate 1, under-clad layer 2, active area 3, top covering 4, contact layer 5, described substrate 1 is for being applicable to epitaxially grown GaAs single-chip, and described under-clad layer 2 and described top covering 4 are Al
0.5in
0.5p, described active area 3 is luminous zone, described contact layer 5 is attached most importance to Doped GaAs, the emission wavelength of GaAs base semiconductor laser epitaxial wafer is positioned near 660nm, described contact layer 5 surface is provided with the deielectric-coating 11 that one deck is not absorbed with the light that source region 3 sends, and the value of the refractive index m of described deielectric-coating 11 is 2.01; The refractive index of the light that GaAs base semiconductor laser epitaxial wafer sends in GaAs is 3.82, and the value of the thickness d of described deielectric-coating 11 is 82nm, and described deielectric-coating 11 surface roughness Ra is 5nm; Described deielectric-coating 11 is the Si of sputtering growth
3n
4.
Claims (10)
1. test the method for GaAs base semiconductor laser epitaxial wafer emission wavelength for one kind, described GaAs base semiconductor laser epitaxial wafer comprise set gradually from the bottom to top substrate, under-clad layer, active area, top covering, contact layer, described substrate is for being applicable to epitaxially grown GaAs single-chip, described under-clad layer and described top covering are the multi-element compounds mated with described substrate lattice, described active area is luminous zone, described contact layer is the contact layer forming Ohmic contact with metal electrode, it is characterized in that, concrete steps comprise:
(1) deielectric-coating of the light that source region sends is not absorbed with at described GaAs base semiconductor laser epitaxial wafer superficial growth one deck, the span of the refractive index m of described deielectric-coating is 1 < m < n, n is the refractive index of light in GaAs that described GaAs base semiconductor laser epitaxial wafer sends; The wavelength of the span of the thickness d of described deielectric-coating to be 0 < d≤λ/2m, λ the be light that described GaAs base semiconductor laser epitaxial wafer sends; Described deielectric-coating rough surface;
(2) conventional photoluminescence test is carried out to the GaAs base semiconductor laser epitaxial wafer that step (1) obtains, obtain GaAs base semiconductor laser epitaxial wafer emission wavelength;
(3) described deielectric-coating is removed.
2. a kind of method of testing GaAs base semiconductor laser epitaxial wafer emission wavelength according to claim 1, it is characterized in that, after step (1) completes, at 100 ° of-300 ° of temperature, annealing in process is carried out to described GaAs base semiconductor laser epitaxial wafer.
3. a kind of method of testing GaAs base semiconductor laser epitaxial wafer emission wavelength according to claim 1, is characterized in that, the value of the refractive index m of described deielectric-coating is the square root of n, and the thickness d of described deielectric-coating is λ/4m.
4. a kind of method of testing GaAs base semiconductor laser epitaxial wafer emission wavelength according to claim 1, it is characterized in that, described deielectric-coating surface roughness Ra is greater than 2nm.
5. a kind of method of testing GaAs base semiconductor laser epitaxial wafer emission wavelength according to claim 1, is characterized in that, described deielectric-coating is the SiO of sputtering growth
2, Si
3n
4, Al
2o
3, ZrO
2.
6. a kind of method of testing GaAs base semiconductor laser epitaxial wafer emission wavelength according to claim 1, is characterized in that, the material of described under-clad layer and described top covering is any one in AlGaAs, AlGaInP or InGaAsP.
7. a kind of method of testing GaAs base semiconductor laser epitaxial wafer emission wavelength according to claim 1, it is characterized in that, the material of described active area is any one or strain any one of AlGaAs, AlGaInP, InGaAsP unmatched with described substrate lattice of AlGaAs, AlGaInP, the InGaAsP mated with described substrate lattice, and described active area emission wavelength is 600-1000nm.
8. according to the arbitrary a kind of described method of testing GaAs base semiconductor laser epitaxial wafer emission wavelength of claim 1-7, it is characterized in that, described contact layer is attached most importance to Doped GaAs.
9. one kind for testing the GaAs base semiconductor laser epitaxial wafer of emission wavelength, comprise the substrate set gradually from the bottom to top, under-clad layer, active area, top covering, contact layer, described substrate is for being applicable to epitaxially grown GaAs single-chip, described under-clad layer and described top covering are the multi-element compounds mated with described substrate lattice, described active area is luminous zone, described contact layer is the contact layer forming Ohmic contact with metal electrode, it is characterized in that, described contact layer surface is provided with the deielectric-coating that one deck is not absorbed with the light that source region sends, the span of the refractive index m of described deielectric-coating is 1 < m < n, n is the refractive index of light in GaAs that described GaAs base semiconductor laser epitaxial wafer sends, the wavelength of the span of the thickness d of described deielectric-coating to be 0 < d≤λ/2m, λ the be light that described GaAs base semiconductor laser epitaxial wafer sends, described deielectric-coating rough surface.
10. a kind of GaAs base semiconductor laser epitaxial wafer for testing emission wavelength according to claim 9, it is characterized in that, the value of the refractive index m of described deielectric-coating is the square root of n, and the thickness d of described deielectric-coating is λ/4m, and described deielectric-coating surface roughness Ra is greater than 2nm.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000058969A (en) * | 1998-08-04 | 2000-02-25 | Mitsui Chemicals Inc | Semiconductor laser device |
| CN104393487A (en) * | 2014-10-17 | 2015-03-04 | 深圳瑞波光电子有限公司 | Epitaxial structure of semiconductor laser chip |
| CN105071223A (en) * | 2015-09-14 | 2015-11-18 | 山西飞虹微纳米光电科技有限公司 | Semiconductor laser device epitaxial wafer and manufacturing method thereof |
-
2015
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000058969A (en) * | 1998-08-04 | 2000-02-25 | Mitsui Chemicals Inc | Semiconductor laser device |
| CN104393487A (en) * | 2014-10-17 | 2015-03-04 | 深圳瑞波光电子有限公司 | Epitaxial structure of semiconductor laser chip |
| CN105071223A (en) * | 2015-09-14 | 2015-11-18 | 山西飞虹微纳米光电科技有限公司 | Semiconductor laser device epitaxial wafer and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108956550A (en) * | 2018-06-12 | 2018-12-07 | 华灿光电（浙江）有限公司 | A kind of method and apparatus of photoluminescence spectra processing |
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