CN108956550A - A kind of method and apparatus of photoluminescence spectra processing - Google Patents
A kind of method and apparatus of photoluminescence spectra processing Download PDFInfo
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- CN108956550A CN108956550A CN201810601407.8A CN201810601407A CN108956550A CN 108956550 A CN108956550 A CN 108956550A CN 201810601407 A CN201810601407 A CN 201810601407A CN 108956550 A CN108956550 A CN 108956550A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
Abstract
The invention discloses a kind of method and apparatus of photoluminescence spectra processing, belong to technical field of semiconductors.It include: the photoluminescence spectra for obtaining epitaxial wafer to be tested；Obtain the parameter value of each pixel in the photoluminescence spectra of epitaxial wafer to be tested；According to the parameter value of each pixel in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested, determine epitaxial wafer to be tested with the presence or absence of defect and the type of defect.The present invention passes through after the photoluminescence spectra for getting epitaxial wafer to be tested, obtain the parameter value of each pixel in the photoluminescence spectra of epitaxial wafer to be tested, and according to the parameter value of pixel each in the photoluminescence spectra of epitaxial wafer to be tested, determine epitaxial wafer to be tested with the presence or absence of defect and the type of defect, analysis to the photoluminescence spectra of epitaxial wafer is completed by equipment autonomously, low efficiency, the problem of Stability and veracity difference caused by artificially analyzing effectively are avoided, analysis efficiency and precision of analysis and stability are improved.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of method and apparatus of photoluminescence spectra processing.
Background technique
Luminescence generated by light (English: Photoluminescence, abbreviation: PL) is one kind of chemiluminescence, refers to material absorbing photon
Again the process of photon (or electromagnetic wave) is given off after (or electromagnetic wave).On quantum-mechanical theory, this process can be described
Lower state is returned after transitting to the excitation state of higher energy level for material absorbing photon, while releasing the process of photon.Luminescence generated by light
Spectrum (English: Photoluminescence Spectroscopy, referred to as: PL spectrum) refer to substance under the excitation of light, electronics from
Valence band transits to conduction band and leaves hole in valence band；Electrons and holes reach respective by relaxation in respective conduction band and valence band
The lowest excited state (i.e. conduction band bottom and top of valence band in intrinsic semiconductor) not being occupied, becomes quasi-equilibrium state；Under quasi-equilibrium state
Electrons and holes pass through recombination luminescence again, form the intensity of different wavelengths of light or the spectrogram of Energy distribution.
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is that one kind can be converted to electric energy
The semiconductor diode of luminous energy.Epitaxial wafer refers to that the substrate base that proper temperature is heated at one piece (mainly has sapphire, carbonization
Silicon, silicon etc.) on the specific monocrystal thin films that are grown.Epitaxial wafer is in the upstream link in LED industry chain, is semiconductor lighting
Industrial technology content highest influences maximum link to final products quality and the control of product.Therefore it has been grown in epitaxial wafer
Afterwards, it will usually luminescence generated by light test be carried out to epitaxial wafer, obtain the photoluminescence spectra of epitaxial wafer, and by technical staff to extension
The photoluminescence spectra of piece is analyzed, and determines epitaxial wafer with the presence or absence of defect and the type of defect.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Photoluminescence spectra is artificially analyzed by technical staff, and the efficiency of analysis is lower；And analysis result depends on
The professional standards of technical staff, since the professional standards of technical staff can not completely the same, precision of analysis
It is poor with stability.
Summary of the invention
The embodiment of the invention provides a kind of method and apparatus of photoluminescence spectra processing, are able to solve prior art people
For the problem that analysis efficiency is lower, precision of analysis and stability are poor caused by analysis photoluminescence spectra.It is described
Technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of methods of photoluminescence spectra processing, which comprises
Obtain the photoluminescence spectra of epitaxial wafer to be tested；
Obtain the parameter value of each pixel in the photoluminescence spectra of the epitaxial wafer to be tested；
According to the parameter value of each pixel in the luminescence generated by light luminous spectrum of the epitaxial wafer to be tested, determine described to be tested
Epitaxial wafer is with the presence or absence of defect and the type of defect.
Optionally, in the luminescence generated by light luminous spectrum according to the epitaxial wafer to be tested each pixel parameter value, really
The fixed epitaxial wafer to be tested is with the presence or absence of defect and the type of defect, comprising:
Obtain the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers；
It is and described to be measured respectively by the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers
The parameter value for trying each pixel in the luminescence generated by light luminous spectrum of epitaxial wafer is compared, and calculates various types of defect epitaxial wafers
Photoluminescence spectra and the epitaxial wafer to be tested luminescence generated by light luminous spectrum similarity；
Outside the highest defect of similarity for selecting the photoluminescence spectra of photoluminescence spectra and the epitaxial wafer to be tested
Prolong piece；
When the phase of the photoluminescence spectra and the photoluminescence spectra of the epitaxial wafer to be tested of the defect epitaxial wafer of selection
When being less than similarity threshold like degree, determining the epitaxial wafer to be tested, there is no defects；
When the phase of the photoluminescence spectra and the photoluminescence spectra of the epitaxial wafer to be tested of the defect epitaxial wafer of selection
When being greater than or equal to similarity threshold like degree, the epitaxial wafer existing defects to be tested are determined, and by the defect epitaxial wafer of selection
Affiliated defect type is as defect type belonging to the epitaxial wafer to be tested.
Optionally, in the luminescence generated by light luminous spectrum according to the epitaxial wafer to be tested each pixel parameter value, really
The fixed epitaxial wafer to be tested is with the presence or absence of defect and the type of defect, comprising:
Determine that parameter value is less than the pixel of defect threshold value in the luminescence generated by light luminous spectrum of the epitaxial wafer to be tested；
Parameter value in the luminescence generated by light luminous spectrum of the epitaxial wafer to be tested is counted to be less than shared by the pixel of defect threshold value
Ratio；
When the ratio of statistics is less than proportion threshold value, determining the epitaxial wafer to be tested, there is no defects；
When the ratio of statistics is greater than or equal to proportion threshold value, the epitaxial wafer existing defects to be tested are determined, and according to
The parameter value of each pixel in the luminescence generated by light luminous spectrum of the epitaxial wafer to be tested, determines belonging to the epitaxial wafer to be tested
Defect type.
Preferably, in the luminescence generated by light luminous spectrum according to the epitaxial wafer to be tested each pixel parameter value, really
Defect type belonging to the fixed epitaxial wafer to be tested, comprising:
Obtain the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers；
It is and described to be measured respectively by the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers
The parameter value for trying each pixel in the luminescence generated by light luminous spectrum of epitaxial wafer is compared, and calculates various types of defect epitaxial wafers
Photoluminescence spectra and the epitaxial wafer to be tested luminescence generated by light luminous spectrum similarity；
Outside the highest defect of similarity for selecting the photoluminescence spectra of photoluminescence spectra and the epitaxial wafer to be tested
Prolong piece, and using defect type belonging to the defect epitaxial wafer selected as defect type belonging to the epitaxial wafer to be tested.
Preferably, in the luminescence generated by light luminous spectrum according to the epitaxial wafer to be tested each pixel parameter value, really
Defect type belonging to the fixed epitaxial wafer to be tested, comprising:
Parameter value in the luminescence generated by light luminous spectrum of the epitaxial wafer to be tested is obtained to be less than where the pixel of defect threshold value
Position；
According to the position of acquisition, defect type belonging to the epitaxial wafer to be tested is determined.
On the other hand, the embodiment of the invention provides a kind of device of photoluminescence spectra processing, described device includes:
Spectrum obtains module, for obtaining the photoluminescence spectra of epitaxial wafer to be tested；
Parameter acquisition module, the parameter of each pixel in the photoluminescence spectra for obtaining the epitaxial wafer to be tested
Value；
Determining module, for the parameter value of each pixel in the luminescence generated by light luminous spectrum according to the epitaxial wafer to be tested,
Determine the epitaxial wafer to be tested with the presence or absence of defect and the type of defect.
Optionally, the determining module includes:
Acquisition submodule, the parameter of each pixel in the photoluminescence spectra for obtaining various types of defect epitaxial wafers
Value；
Comparative sub-module, for respectively by the ginseng of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers
Numerical value is compared with the parameter value of each pixel in the luminescence generated by light luminous spectrum of the epitaxial wafer to be tested, calculates various
The similarity of the luminescence generated by light luminous spectrum of the photoluminescence spectra of the defect epitaxial wafer of type and the epitaxial wafer to be tested；
Submodule is selected, for selecting photoluminescence spectra similar to the photoluminescence spectra of the epitaxial wafer to be tested
Spend highest defect epitaxial wafer；
Defect dipoles submodule, photoluminescence spectra and the epitaxial wafer to be tested for the defect epitaxial wafer when selection
The similarity of photoluminescence spectra when being less than similarity threshold, determine the epitaxial wafer to be tested there is no defect；Work as selection
The similarity of photoluminescence spectra and the photoluminescence spectra of the epitaxial wafer to be tested of defect epitaxial wafer be greater than or equal to
When similarity threshold, the epitaxial wafer existing defects to be tested, and defect type belonging to the defect epitaxial wafer by selection are determined
As defect type belonging to the epitaxial wafer to be tested.
Optionally, the determining module includes:
Pixel determines submodule, and parameter value, which is less than, in the luminescence generated by light luminous spectrum for determining the epitaxial wafer to be tested lacks
Fall into the pixel of threshold value；
Statistic submodule, parameter value is less than defect threshold in the luminescence generated by light luminous spectrum for counting the epitaxial wafer to be tested
Ratio shared by the pixel of value；
Defect determines submodule, for determining the epitaxial wafer to be tested not when the ratio of statistics is less than proportion threshold value
Existing defects；When the ratio of statistics is greater than or equal to proportion threshold value, the epitaxial wafer existing defects to be tested are determined, and according to
The parameter value of each pixel in the luminescence generated by light luminous spectrum of the epitaxial wafer to be tested, determines belonging to the epitaxial wafer to be tested
Defect type.
Preferably, the defect determines that submodule is used for,
Obtain the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers；
It is and described to be measured respectively by the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers
The parameter value for trying each pixel in the luminescence generated by light luminous spectrum of epitaxial wafer is compared, and calculates various types of defect epitaxial wafers
Photoluminescence spectra and the epitaxial wafer to be tested luminescence generated by light luminous spectrum similarity；
Outside the highest defect of similarity for selecting the photoluminescence spectra of photoluminescence spectra and the epitaxial wafer to be tested
Prolong piece, and using defect type belonging to the defect epitaxial wafer selected as defect type belonging to the epitaxial wafer to be tested.
Preferably, the defect determines that submodule is used for,
Parameter value in the luminescence generated by light luminous spectrum of the epitaxial wafer to be tested is obtained to be less than where the pixel of defect threshold value
Position；
According to the position of acquisition, defect type belonging to the epitaxial wafer to be tested is determined.
Technical solution provided in an embodiment of the present invention has the benefit that
By obtaining the luminescence generated by light of epitaxial wafer to be tested after the photoluminescence spectra for getting epitaxial wafer to be tested
The parameter value of each pixel in spectrum, and according to the parameter value of pixel each in the photoluminescence spectra of epitaxial wafer to be tested, really
Fixed epitaxial wafer to be tested completes the photoluminescence spectra to epitaxial wafer with the presence or absence of defect and the type of defect, by equipment autonomously
Analysis, effectively avoid artificially analyze epitaxial wafer photoluminescence spectra caused by analysis efficiency it is lower, analysis result standard
True property and the poor problem of stability, improve analysis efficiency and precision of analysis and stability.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of flow chart of the method for photoluminescence spectra processing provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of graphite plate provided in an embodiment of the present invention；
Fig. 3 a is the schematic diagram of dominant wavelength drafting figure provided in an embodiment of the present invention；
Fig. 3 b is the schematic diagram of peak wavelength drafting figure provided in an embodiment of the present invention；
Fig. 3 c is the schematic diagram of half-breadth wavelength drafting figure provided in an embodiment of the present invention；
Fig. 3 d is the schematic diagram of integral light intensity drafting figure provided in an embodiment of the present invention；
Fig. 3 e is the schematic diagram of thickness drafting figure provided in an embodiment of the present invention；
Fig. 3 f is the schematic diagram of reflectivity drafting figure provided in an embodiment of the present invention；
Fig. 3 g is the schematic diagram of luminous intensity drafting figure provided in an embodiment of the present invention；
Fig. 3 h is the schematic diagram of peak strength drafting figure provided in an embodiment of the present invention；
Fig. 4 is the flow chart of the method for another photoluminescence spectra processing provided in an embodiment of the present invention；
Fig. 5 is the schematic diagram of the photoluminescence spectra of epitaxial wafer to be tested provided in an embodiment of the present invention；
Fig. 6 is outside the photoluminescence spectra similarity highest defect provided in an embodiment of the present invention with epitaxial wafer to be tested
Prolong the schematic diagram of the photoluminescence spectra of piece；
Fig. 7 is the structural schematic diagram that the groove of epitaxial wafer to be tested is grown on graphite plate provided in an embodiment of the present invention；
Fig. 8 is the flow chart of the method for another photoluminescence spectra processing provided in an embodiment of the present invention；
Fig. 9 is a kind of structural schematic diagram of the device of photoluminescence spectra processing provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of method of photoluminescence spectra processing, Fig. 1 is provided in an embodiment of the present invention
A kind of flow chart of the method for photoluminescence spectra processing, referring to Fig. 1, this method comprises:
Step 101: obtaining the photoluminescence spectra of epitaxial wafer to be tested.
In practical applications, it will usually substrate is placed on graphite plate and carry out epitaxial growth, form epitaxial wafer.Fig. 2 is
The structural schematic diagram of graphite plate provided in an embodiment of the present invention can be set multiple for holding on a graphite plate 10 referring to fig. 2
The groove 20 of substrate is carried, therefore has multiple substrates on a graphite plate while carrying out epitaxial growth, each substrate forms one
Epitaxial wafer.After all substrates on the same graphite plate are completed at the same time epitaxial growth, using luminescence generated by light tester to same
All epitaxial wafers formed on one graphite plate carry out luminescence generated by light test, obtain all extensions formed on the same graphite plate
The photoluminescence spectra of piece.When executing step 101, it can directly obtain from luminescence generated by light tester and be formed on the same graphite plate
All epitaxial wafers photoluminescence spectra.
Since what is obtained from luminescence generated by light tester is the photoluminescence spectra of multiple epitaxial wafers, and analyze luminescence generated by light light
Time spectrum is directed to an epitaxial wafer, it is therefore desirable to which what is obtained from luminescence generated by light tester is the luminescence generated by light light of multiple epitaxial wafers
The photoluminescence spectra of each epitaxial wafer is intercepted out in spectrum.It in specific implementation, can be directly according to the recessed of each carrying substrate
Position of the slot on graphite plate determines position of the photoluminescence spectra of each epitaxial wafer in the photoluminescence spectra of acquisition,
And then the photoluminescence spectra of each epitaxial wafer is intercepted out from the photoluminescence spectra obtained.It can also be in the photic hair of acquisition
Spectrally with the mobile choice box of the step-length of setting, (area of choice box is greater than the size of the photoluminescence spectra of epitaxial wafer, step to light
Long the distance between the photoluminescence spectra edge for being greater than two neighboring epitaxial wafer), if on choice box all pixels parameter
Value is less than setting value, then using the photoluminescence spectra in choice box as the photoluminescence spectra of an epitaxial wafer.
Specifically, photoluminescence spectra may include dominant wavelength drafting figure (English abbreviation: WLD Mapping), peak value wave
Long figure (English abbreviation: WLP Mapping), half-breadth wavelength drafting figure (English abbreviation: HW Mapping), the integral light intensity of drawing is drawn
It charts (English abbreviation: INT Mapping), thickness draws figure (TH Mapping), reflectivity draws figure (English abbreviation: PR
Mapping), luminous intensity draws figure (English abbreviation: LOP Mapping) and peak strength draws figure (English abbreviation: PI
Mapping one of) or a variety of.
Fig. 3 a is the schematic diagram that dominant wavelength provided in an embodiment of the present invention draws figure, and Fig. 3 b is provided in an embodiment of the present invention
Peak wavelength draws the schematic diagram of figure, and Fig. 3 c is the schematic diagram that half-breadth wavelength provided in an embodiment of the present invention draws figure, and Fig. 3 d is
Integral light intensity provided in an embodiment of the present invention draws the schematic diagram of figure, and Fig. 3 e is that thickness provided in an embodiment of the present invention draws figure
Schematic diagram, Fig. 3 f are the schematic diagram that reflectivity provided in an embodiment of the present invention draws figure, and Fig. 3 g is provided in an embodiment of the present invention
Luminous intensity draws the schematic diagram of figure, and Fig. 3 h is the schematic diagram that peak strength provided in an embodiment of the present invention draws figure.As Fig. 3 a~
Shown in Fig. 3 h, what is obtained from luminescence generated by light tester is the photoluminescence spectra of multiple epitaxial wafers, is needed respectively from various photic
The photoluminescence spectra of each epitaxial wafer is intercepted out in luminescent spectrum.I.e. when photoluminescence spectra includes at least two drafting figures
When, every kind of drafting figure is handled respectively.
It should be noted that number 1~number 31 in Fig. 3 a~Fig. 3 h is the exemplary volume of each groove on graphite plate
Number, it is only used for distinguishing groove different on graphite plate.
For example, photoluminescence spectra includes dominant wavelength drafting figure and peak wavelength drafting figure, then from luminescence generated by light tester
What is obtained is the dominant wavelength drafting figure of multiple epitaxial wafers and the peak wavelength drafting figure of multiple epitaxial wafers.It can be first from multiple extensions
The dominant wavelength drafting figure of each epitaxial wafer is intercepted out in the dominant wavelength drafting figure of piece, then is drawn from the peak wavelength of multiple epitaxial wafers
The peak wavelength drafting figure of each epitaxial wafer is intercepted out in figure；It can also first draw in figure and cut from the peak wavelength of multiple epitaxial wafers
The peak wavelength drafting figure of each epitaxial wafer is taken out, then intercepts out each epitaxial wafer from the dominant wavelength drafting figure of multiple epitaxial wafers
Dominant wavelength draw figure.
Step 102: obtaining the parameter value of each pixel in the photoluminescence spectra of epitaxial wafer to be tested.
In practical applications, each pixel can be directly got from the photoluminescence spectra of epitaxial wafer to be tested bright
The numerical value such as degree, gray scale, color, such as the photoluminescence spectra of each type all use color or gray scale to indicate corresponding parameter
Value, therefore can directly be got from the photoluminescence spectra of epitaxial wafer to be tested each according to the type of photoluminescence spectra
The parameter value of a pixel respective type.
Specifically, when photoluminescence spectra includes dominant wavelength drafting figure, the parameter value of acquisition is main value wavelength (English letter
Claim: Wd)；When photoluminescence spectra includes peak wavelength drafting figure, the parameter value of acquisition be peak wavelength (English abbreviation:
Wp)；When photoluminescence spectra includes half-breadth wavelength drafting figure, the parameter value of acquisition is that halfwidth (English abbreviation: Hw) works as light
When photoluminescence spectrum includes that integral light intensity draws figure, the parameter value of acquisition is integral light intensity (English abbreviation: INT)；When photic hair
When light spectrum includes thickness drafting figure, the parameter value of acquisition is thickness (full name in English: thickness)；Work as photoluminescence spectra
When drawing figure including reflectivity, the parameter value of acquisition is reflectivity (English abbreviation: PR)；When photoluminescence spectra includes luminous intensity
When drawing figure, the parameter value of acquisition is light intensity (English abbreviation: LOP)；When photoluminescence spectra includes peak strength drafting figure,
The parameter value of acquisition is peak strength (English abbreviation: PI, alternatively, full name in English: intensity).
Step 103: according to the parameter value of each pixel in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested, determining to be tested
Epitaxial wafer is with the presence or absence of defect and the type of defect.
The embodiment of the present invention is by obtaining extension to be tested after the photoluminescence spectra for getting epitaxial wafer to be tested
The parameter value of each pixel in the photoluminescence spectra of piece, and according to pixel each in the photoluminescence spectra of epitaxial wafer to be tested
Parameter value, determine that epitaxial wafer to be tested with the presence or absence of the type of defect and defect, is completed by equipment autonomously to epitaxial wafer
The analysis of photoluminescence spectra, effectively avoid artificially analyze epitaxial wafer photoluminescence spectra caused by analysis efficiency it is lower,
Precision of analysis and the poor problem of stability, improve analysis efficiency and precision of analysis and stabilization
Property.
Optionally, after step 103, this method can also include:
It generates testing result and exports.
In the present embodiment, outside testing result includes epitaxial wafer with the presence or absence of defect and in epitaxial wafer existing defects
Prolong defect type belonging to piece.
By generating testing result and exporting, determine that the growing state of epitaxial wafer provides reference for technical staff.
Preferably, this method can also include:
The photoluminescence spectra of epitaxial wafer to be tested and testing result are exported together.
By exporting the photoluminescence spectra of epitaxial wafer to be tested together with testing result, technical staff is facilitated to verify inspection
The accuracy for surveying result, avoids causing adverse effect due to testing result mistake.
The embodiment of the invention provides the methods of another photoluminescence spectra processing, are luminescence generated by light light shown in FIG. 1
Compose a kind of specific implementation of the method for processing.Fig. 4 is the side of another photoluminescence spectra processing provided in an embodiment of the present invention
The flow chart of method, referring to fig. 4, this method comprises:
Step 201: obtaining the photoluminescence spectra of epitaxial wafer to be tested.
Specifically, which can be identical as step 101, and this will not be detailed here.
Step 202: obtaining the parameter value of each pixel in the photoluminescence spectra of epitaxial wafer to be tested.
Specifically, which can be identical as step 102, and this will not be detailed here.
Step 203: obtaining the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers.
In practical applications, the photoluminescence spectra of various types of defect epitaxial wafers can be stored in advance and demarcate extension
Defect type belonging to piece.The ginseng of each pixel is got from the photoluminescence spectra of various types of defect epitaxial wafers respectively
Numerical value (specific implementation is similar with the parameter value of each pixel is got from the photoluminescence spectra of epitaxial wafer to be tested),
And the parameter value for each pixel that will acquire stores together with corresponding photoluminescence spectra.When executing step 101, Ke Yizhi
Connect the parameter value of each pixel from the photoluminescence spectra for getting various types of defect epitaxial wafers in storage equipment.
Step 204: respectively by the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers, with
The parameter value of each pixel is compared in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested, is calculated outside various types of defects
Prolong the similarity of the photoluminescence spectra of piece and the luminescence generated by light luminous spectrum of epitaxial wafer to be tested.
In specific implementation, by the parameter value of each pixel in the photoluminescence spectra of each type of defect epitaxial wafer,
It is compared with the parameter value of the pixel of same position in the photoluminescence spectra of epitaxial wafer to be tested.
For example, have the photoluminescence spectra of the defect epitaxial wafer of type-A, B type defect epitaxial wafer luminescence generated by light light
The photoluminescence spectra of the defect epitaxial wafer of spectrum and C type, be followed successively by photoluminescence spectra pixel a, pixel b, pixel c, as
Plain d, pixel e and pixel f, then first by the parameter value of pixel a in the photoluminescence spectra of the defect epitaxial wafer of type-A with it is to be measured
The parameter value for trying pixel a in the photoluminescence spectra of epitaxial wafer is compared, by the luminescence generated by light light of the defect epitaxial wafer of type-A
The parameter value of pixel b is compared with the parameter value of pixel b in the photoluminescence spectra of epitaxial wafer to be tested in spectrum, by type-A
Defect epitaxial wafer photoluminescence spectra in pixel c in the parameter value of pixel c and the photoluminescence spectra of epitaxial wafer to be tested
Parameter value be compared, by the parameter value of pixel d in the photoluminescence spectra of the defect epitaxial wafer of type-A and extension to be tested
The parameter value of pixel d is compared in the photoluminescence spectra of piece, by picture in the photoluminescence spectra of the defect epitaxial wafer of type-A
The parameter value of plain e is compared with the parameter value of pixel e in the photoluminescence spectra of epitaxial wafer to be tested, by the defect of type-A
The parameter of the parameter value of pixel f and pixel f in the photoluminescence spectra of epitaxial wafer to be tested in the photoluminescence spectra of epitaxial wafer
Value is compared.
Then by the parameter value of pixel a in the photoluminescence spectra of the defect epitaxial wafer of B type and epitaxial wafer to be tested
The parameter value of pixel a is compared in photoluminescence spectra, by pixel b in the photoluminescence spectra of the defect epitaxial wafer of B type
Parameter value be compared with the parameter value of pixel b in the photoluminescence spectra of epitaxial wafer to be tested, by the defect extension of B type
In the photoluminescence spectra of piece in the photoluminescence spectra of the parameter value of pixel c and epitaxial wafer to be tested pixel c parameter value into
Row compares, by the photic hair of the parameter value of pixel d and epitaxial wafer to be tested in the photoluminescence spectra of the defect epitaxial wafer of B type
The parameter value of pixel d is compared in light spectrum, by the parameter of pixel e in the photoluminescence spectra of the defect epitaxial wafer of B type
Value is compared with the parameter value of pixel e in the photoluminescence spectra of epitaxial wafer to be tested, by the light of the defect epitaxial wafer of B type
The parameter value of pixel f is compared with the parameter value of pixel f in the photoluminescence spectra of epitaxial wafer to be tested in photoluminescence spectrum.
Finally by the parameter value of pixel a in the photoluminescence spectra of the defect epitaxial wafer of C type and epitaxial wafer to be tested
The parameter value of pixel a is compared in photoluminescence spectra, by pixel b in the photoluminescence spectra of the defect epitaxial wafer of C type
Parameter value be compared with the parameter value of pixel b in the photoluminescence spectra of epitaxial wafer to be tested, by the defect extension of C type
In the photoluminescence spectra of piece in the photoluminescence spectra of the parameter value of pixel c and epitaxial wafer to be tested pixel c parameter value into
Row compares, by the photic hair of the parameter value of pixel d and epitaxial wafer to be tested in the photoluminescence spectra of the defect epitaxial wafer of C type
The parameter value of pixel d is compared in light spectrum, by the parameter of pixel e in the photoluminescence spectra of the defect epitaxial wafer of C type
Value is compared with the parameter value of pixel e in the photoluminescence spectra of epitaxial wafer to be tested, by the light of the defect epitaxial wafer of C type
The parameter value of pixel f is compared with the parameter value of pixel f in the photoluminescence spectra of epitaxial wafer to be tested in photoluminescence spectrum.
If the difference between two parameter values being compared is in setting range (such as -1~+1), judgement is compared
Compared with two parameter values pixel it is similar.Similar pixel ratio shared in photoluminescence spectra is counted again, can be obtained
The similarity of the luminescence generated by light luminous spectrum of the photoluminescence spectra of defect epitaxial wafer and epitaxial wafer to be tested.For example, similar picture
Element ratio shared in photoluminescence spectra is 80%, then the photoluminescence spectra of the defect epitaxial wafer of type-A and to be tested
The similarity of the luminescence generated by light luminous spectrum of epitaxial wafer is 80.
Step 205: the similarity of the photoluminescence spectra of selection photoluminescence spectra and epitaxial wafer to be tested is highest to be lacked
Fall into epitaxial wafer.When the similarity of the photoluminescence spectra of the photoluminescence spectra and epitaxial wafer to be tested of the defect epitaxial wafer of selection
When less than similarity threshold, step 206 is executed；When the photoluminescence spectra and epitaxial wafer to be tested of the defect epitaxial wafer of selection
When the similarity of photoluminescence spectra is greater than or equal to similarity threshold, step 207 is executed.
For example, the luminescence generated by light luminous spectrum of the photoluminescence spectra and epitaxial wafer to be tested of the defect epitaxial wafer of type-A
Similarity is the phase of the photoluminescence spectra of the defect epitaxial wafer of 80, B type and the luminescence generated by light luminous spectrum of epitaxial wafer to be tested
Like degree be 50, C type defect epitaxial wafer photoluminescence spectra and epitaxial wafer to be tested luminescence generated by light luminous spectrum it is similar
Degree is 20, then selects the defect epitaxial wafer of type-A.
Due to be compared with the photoluminescence spectra of epitaxial wafer to be tested be all defect epitaxial wafer luminescence generated by light light
Spectrum, and epitaxial wafer to be tested may not existing defects, by the photoluminescence spectra of defect epitaxial wafer that will select with it is to be measured
The similarity of the photoluminescence spectra of epitaxial wafer is tried compared with similarity threshold carries out size, can determine to determine to be tested outer
Prolong piece with the presence or absence of defect, and carries out different processing according to different situations.
In practical applications, the luminescence generated by light light of zero defect epitaxial wafer can also be obtained during executing step 203
The parameter value of each pixel in spectrum.It, will be each in the photoluminescence spectra of zero defect epitaxial wafer during executing step 204
The parameter value of pixel is compared with the parameter value of each pixel in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested, calculates
The similarity of the luminescence generated by light luminous spectrum of the photoluminescence spectra of zero defect epitaxial wafer and epitaxial wafer to be tested.Executing step
It is during 205, the photoluminescence spectra of zero defect epitaxial wafer is similar to the luminescence generated by light luminous spectrum of epitaxial wafer to be tested
The similarity of the luminescence generated by light luminous spectrum of the photoluminescence spectra and epitaxial wafer to be tested of degree and various types of defect epitaxial wafers
It is compared together；Alternatively, after executing step 205, by the photoluminescence spectra of zero defect epitaxial wafer and extension to be tested
The similarity of the luminescence generated by light luminous spectrum of piece, and selection defect epitaxial wafer photoluminescence spectra and epitaxial wafer to be tested light
The similarity of photoluminescence spectrum is compared.If highest with the similarity of the photoluminescence spectra of epitaxial wafer to be tested is nothing
The photoluminescence spectra of defect epitaxial wafer, thens follow the steps 206；If similar to the photoluminescence spectra of epitaxial wafer to be tested
Spend it is highest be defect epitaxial wafer photoluminescence spectra, then follow the steps 207.
Step 206: determining epitaxial wafer to be tested, there is no defects.
Step 207: determining epitaxial wafer existing defects to be tested, and defect type belonging to the defect epitaxial wafer by selection is made
For defect type belonging to epitaxial wafer to be tested.
In the present embodiment, it is realized by executing step 203~step 206 according to the luminescence generated by light of epitaxial wafer to be tested hair
The parameter value of each pixel in spectrum determines epitaxial wafer to be tested with the presence or absence of defect and the type of defect；Or by holding
Row step 203~step 205 and step 207 realize the ginseng according to each pixel in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested
Numerical value determines epitaxial wafer to be tested with the presence or absence of defect and the type of defect.
The embodiment of the present invention passes through respectively by the photoluminescence spectra of various types of defect epitaxial wafers and extension to be tested
The photoluminescence spectra of piece is compared, and determines the photoluminescence spectra similarity of photoluminescence spectra Yu epitaxial wafer to be tested
Highest defect epitaxial wafer, and by the luminescence generated by light light of the photoluminescence spectra of determining defect epitaxial wafer and epitaxial wafer to be tested
Similarity size compared with similarity threshold is composed, directly can determine epitaxial wafer to be tested with the presence or absence of defect according to comparison result
And the type of defect, it realizes simple and convenient.
Fig. 5 is the schematic diagram of the photoluminescence spectra of epitaxial wafer to be tested provided in an embodiment of the present invention, and Fig. 6 is the present invention
The photoluminescence spectra with the highest defect epitaxial wafer of photoluminescence spectra similarity of epitaxial wafer to be tested that embodiment provides
Schematic diagram.It, respectively will be various including the photoluminescence spectra of defect epitaxial wafer shown in fig. 6 by taking Fig. 5 and Fig. 6 as an example
The photoluminescence spectra of the defect epitaxial wafer of type is compared with the photoluminescence spectra of epitaxial wafer to be tested shown in fig. 5,
Determine that highest with the photoluminescence spectra similarity of epitaxial wafer to be tested shown in fig. 5 is defect epitaxial wafer shown in fig. 6
Photoluminescence spectra.Due to the photoluminescence spectra of defect epitaxial wafer shown in fig. 6 and the luminescence generated by light of epitaxial wafer to be tested
The similarity of spectrum is greater than similarity threshold, it is thus determined that epitaxial wafer existing defects to be tested；The corresponding defect as shown in Fig. 6
Defect type belonging to epitaxial wafer is that aperture is abnormal, therefore defect type belonging to epitaxial wafer to be tested is that aperture is abnormal.Due to
Aperture is usually to carry out as caused by the aperture on graphite plate, therefore to the groove for growing epitaxial wafer to be tested on graphite plate extremely
It checks.Fig. 7 is the structural schematic diagram that the groove of epitaxial wafer to be tested is grown on graphite plate, and referring to Fig. 7, the edge of groove is deposited really
In aperture.
The embodiment of the invention provides the methods of another photoluminescence spectra processing, are luminescence generated by light light shown in FIG. 1
Compose another specific implementation of the method for processing.Fig. 8 is another photoluminescence spectra provided in an embodiment of the present invention processing
The flow chart of method, referring to Fig. 8, this method comprises:
Step 301: obtaining the photoluminescence spectra of epitaxial wafer to be tested.
Specifically, which can be identical as step 101, and this will not be detailed here.
Step 302: obtaining the parameter value of each pixel in the photoluminescence spectra of epitaxial wafer to be tested.
Specifically, which can be identical as step 102, and this will not be detailed here.
Step 303: determining that parameter value is less than the pixel of defect threshold value in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested.
It is big by the parameter value and defect threshold value comparison of each pixel in the luminescence generated by light luminous spectrum by epitaxial wafer to be tested
It is small, corresponding pixel of determining in epitaxial wafer to be tested that there may be the regions of defect in luminescence generated by light luminous spectrum.
Step 304: counting the pixel institute that parameter value in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested is less than defect threshold value
The ratio accounted for.When the ratio of statistics is less than proportion threshold value, step 305 is executed；When the ratio of statistics is greater than or equal to ratio threshold
When value, step 306 is executed.
By will statistics ratio with proportion threshold value (such as 1%) compared with size, and according to comparison result determine it is to be tested outside
Prolong piece with the presence or absence of defect, can to avoid due in detection error or epitaxial wafer to be tested defect area it is too small and determine to be measured
Epitaxial wafer existing defects are tried, and then carry out unnecessary processing.
Step 305: determining epitaxial wafer to be tested, there is no defects.
Step 306: determining epitaxial wafer existing defects to be tested, and according in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested
The parameter value of each pixel determines defect type belonging to epitaxial wafer to be tested.
In a kind of implementation of the present embodiment, according to each pixel in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested
Parameter value determines defect type belonging to epitaxial wafer to be tested, may include:
Obtain the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers；
Respectively by the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers, outside to be tested
The parameter value for prolonging each pixel in the luminescence generated by light luminous spectrum of piece is compared, and calculates the light of various types of defect epitaxial wafers
The similarity of the luminescence generated by light luminous spectrum of photoluminescence spectrum and epitaxial wafer to be tested；
The highest defect epitaxial wafer of similarity of the photoluminescence spectra of photoluminescence spectra and epitaxial wafer to be tested is selected,
And using defect type belonging to the defect epitaxial wafer selected as defect type belonging to epitaxial wafer to be tested.
Specifically, above-mentioned realization step can be identical as step 203~step 205, and this will not be detailed here.
In the present embodiment another kind implementation, according to each pixel in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested
Parameter value, determine defect type belonging to epitaxial wafer to be tested, may include:
It obtains parameter value in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested and is less than the position where the pixel of defect threshold value；
According to the position of acquisition, defect type belonging to epitaxial wafer to be tested is determined.
For example, parameter value is less than the position where the pixel of defect threshold value in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested
Concentrate edge region, it is determined that defect type belonging to epitaxial wafer to be tested is that aperture is abnormal, usually by small on graphite plate
Hole causes；Position where parameter value is less than the pixel of defect threshold value in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested concentrates on
Non-edge, it is determined that defect type belonging to epitaxial wafer to be tested is that region is abnormal, usually by substrate or epitaxial growth
Process causes；It concentrates position where parameter value is less than the pixel of defect threshold value in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested
In whole region, it is determined that defect type belonging to epitaxial wafer to be tested is that aperture is abnormal, is usually caused by substrate.
In the present embodiment, it is realized by executing step 303~step 305 according to the luminescence generated by light of epitaxial wafer to be tested hair
The parameter value of each pixel in spectrum determines epitaxial wafer to be tested with the presence or absence of defect and the type of defect；Or by holding
Row step 303~step 304 and step 306 realize the ginseng according to each pixel in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested
Numerical value determines epitaxial wafer to be tested with the presence or absence of defect and the type of defect.
The embodiment of the present invention passes through parameter value in the luminescence generated by light luminous spectrum for first counting epitaxial wafer to be tested and is less than defect threshold
Ratio shared by the pixel of value, and by the ratio of statistics compared with proportion threshold value size, determined according to comparison result to be tested outer
Prolong piece with the presence or absence of defect, then when determining epitaxial wafer existing defects to be tested, is sent out according to the luminescence generated by light of epitaxial wafer to be tested
The parameter value of each pixel in spectrum, determines defect type belonging to epitaxial wafer to be tested, lacks since epitaxial wafer to be tested exists
Sunken probability is lower, therefore whole operand is smaller, and efficiency is higher.
The embodiment of the invention provides a kind of photoluminescence spectra processing device, be adapted to carry out Fig. 1 or Fig. 4 or
The method of photoluminescence spectra processing shown in Fig. 8.Fig. 9 is a kind of photoluminescence spectra processing provided in an embodiment of the present invention
The structural schematic diagram of device, referring to Fig. 9, which includes:
Spectrum obtains module 401, for obtaining the photoluminescence spectra of epitaxial wafer to be tested；
Parameter acquisition module 402, the parameter value of each pixel in the photoluminescence spectra for obtaining epitaxial wafer to be tested；
Determining module 403, for the parameter value of each pixel in the luminescence generated by light luminous spectrum according to epitaxial wafer to be tested, really
Fixed epitaxial wafer to be tested is with the presence or absence of defect and the type of defect.
The embodiment of the present invention is by obtaining extension to be tested after the photoluminescence spectra for getting epitaxial wafer to be tested
The parameter value of each pixel in the photoluminescence spectra of piece, and according to pixel each in the photoluminescence spectra of epitaxial wafer to be tested
Parameter value, determine that epitaxial wafer to be tested with the presence or absence of the type of defect and defect, is completed by equipment autonomously to epitaxial wafer
The analysis of photoluminescence spectra, effectively avoid artificially analyze epitaxial wafer photoluminescence spectra caused by analysis efficiency it is lower,
Precision of analysis and the poor problem of stability, improve analysis efficiency and precision of analysis and stabilization
Property.
In a kind of implementation of the present embodiment, determining module 403 may include:
Acquisition submodule, the parameter of each pixel in the photoluminescence spectra for obtaining various types of defect epitaxial wafers
Value；
Comparative sub-module, for respectively by the ginseng of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers
Numerical value is compared with the parameter value of each pixel in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested, calculates various types
Defect epitaxial wafer photoluminescence spectra and epitaxial wafer to be tested luminescence generated by light luminous spectrum similarity；
Select submodule, for select photoluminescence spectra and epitaxial wafer to be tested photoluminescence spectra similarity most
High defect epitaxial wafer；
Defect dipoles submodule, for the photoluminescence spectra of the defect epitaxial wafer when selection and the light of epitaxial wafer to be tested
When the similarity of photoluminescence spectrum is less than similarity threshold, determining epitaxial wafer to be tested, there is no defects；When outside the defect of selection
When prolonging the similarity of the photoluminescence spectra of piece and the photoluminescence spectra of epitaxial wafer to be tested more than or equal to similarity threshold,
Determine epitaxial wafer existing defects to be tested, and using defect type belonging to the defect epitaxial wafer selected as epitaxial wafer institute to be tested
The defect type of category.
In another implementation of the present embodiment, determining module 403 may include:
Pixel determines submodule, and parameter value is less than defect threshold in the luminescence generated by light luminous spectrum for determining epitaxial wafer to be tested
The pixel of value；
Statistic submodule, parameter value is less than defect threshold value in the luminescence generated by light luminous spectrum for counting epitaxial wafer to be tested
Ratio shared by pixel；
Defect determines submodule, for determining that epitaxial wafer to be tested is not present when the ratio of statistics is less than proportion threshold value
Defect；When the ratio of statistics is greater than or equal to proportion threshold value, epitaxial wafer existing defects to be tested are determined, and according to be tested outer
The parameter value for prolonging each pixel in the luminescence generated by light luminous spectrum of piece determines defect type belonging to epitaxial wafer to be tested.
Optionally, defect determines that submodule can be used for,
Obtain the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers；
Respectively by the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers, outside to be tested
The parameter value for prolonging each pixel in the luminescence generated by light luminous spectrum of piece is compared, and calculates the light of various types of defect epitaxial wafers
The similarity of the luminescence generated by light luminous spectrum of photoluminescence spectrum and epitaxial wafer to be tested；
The highest defect epitaxial wafer of similarity of the photoluminescence spectra of photoluminescence spectra and epitaxial wafer to be tested is selected,
And using defect type belonging to the defect epitaxial wafer selected as defect type belonging to epitaxial wafer to be tested.
Optionally, defect determines that submodule can be used for,
It obtains parameter value in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested and is less than the position where the pixel of defect threshold value；
According to the position of acquisition, defect type belonging to epitaxial wafer to be tested is determined.
Optionally, which can also include:
Output module, for generating testing result and exporting.
Preferably, output module can be used for,
The photoluminescence spectra of epitaxial wafer to be tested and testing result are exported together.
It should be understood that the device of photoluminescence spectra processing provided by the above embodiment is in processing photoluminescence spectra
When, only the example of the division of the above functional modules, in practical application, it can according to need and divide above-mentioned function
With being completed by different functional modules, i.e., the internal structure of device is divided into different functional modules, to complete above description
All or part of function.In addition, the device and photoluminescence spectra of photoluminescence spectra processing provided by the above embodiment
The embodiment of the method for processing belongs to same design, and specific implementation process is detailed in embodiment of the method, and which is not described herein again.
Those of ordinary skill in the art will appreciate that realizing that all or part of the steps of above-described embodiment can pass through hardware
It completes, relevant hardware can also be instructed to complete by program, the program can store in a kind of computer-readable
In storage medium, storage medium mentioned above can be read-only memory, disk or CD etc..
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of method of photoluminescence spectra processing, which is characterized in that the described method includes:
Obtain the photoluminescence spectra of epitaxial wafer to be tested；
Obtain the parameter value of each pixel in the photoluminescence spectra of the epitaxial wafer to be tested；
According to the parameter value of each pixel in the luminescence generated by light luminous spectrum of the epitaxial wafer to be tested, the extension to be tested is determined
Piece is with the presence or absence of defect and the type of defect.
2. the method according to claim 1, wherein described send out according to the luminescence generated by light of the epitaxial wafer to be tested
The parameter value of each pixel in spectrum determines the epitaxial wafer to be tested with the presence or absence of defect and the type of defect, comprising:
Obtain the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers；
It is and described to be tested outer respectively by the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers
The parameter value for prolonging each pixel in the luminescence generated by light luminous spectrum of piece is compared, and calculates the light of various types of defect epitaxial wafers
The similarity of the luminescence generated by light luminous spectrum of photoluminescence spectrum and the epitaxial wafer to be tested；
Select the highest defect epitaxial wafer of similarity of the photoluminescence spectra of photoluminescence spectra and the epitaxial wafer to be tested；
When the similarity of the photoluminescence spectra of the photoluminescence spectra and epitaxial wafer to be tested of the defect epitaxial wafer of selection
When less than similarity threshold, determining the epitaxial wafer to be tested, there is no defects；
When the similarity of the photoluminescence spectra of the photoluminescence spectra and epitaxial wafer to be tested of the defect epitaxial wafer of selection
When more than or equal to similarity threshold, the epitaxial wafer existing defects to be tested are determined, and belonging to the defect epitaxial wafer by selection
Defect type as defect type belonging to the epitaxial wafer to be tested.
3. the method according to claim 1, wherein described send out according to the luminescence generated by light of the epitaxial wafer to be tested
The parameter value of each pixel in spectrum determines the epitaxial wafer to be tested with the presence or absence of defect and the type of defect, comprising:
Determine that parameter value is less than the pixel of defect threshold value in the luminescence generated by light luminous spectrum of the epitaxial wafer to be tested；
It counts parameter value in the luminescence generated by light luminous spectrum of the epitaxial wafer to be tested and is less than ratio shared by the pixel of defect threshold value；
When the ratio of statistics is less than proportion threshold value, determining the epitaxial wafer to be tested, there is no defects；
When the ratio of statistics is greater than or equal to proportion threshold value, the epitaxial wafer existing defects to be tested are determined, and according to described
The parameter value of each pixel in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested, determines defect belonging to the epitaxial wafer to be tested
Type.
4. according to the method described in claim 3, it is characterized in that, described send out according to the luminescence generated by light of the epitaxial wafer to be tested
The parameter value of each pixel in spectrum determines defect type belonging to the epitaxial wafer to be tested, comprising:
Obtain the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers；
It is and described to be tested outer respectively by the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers
The parameter value for prolonging each pixel in the luminescence generated by light luminous spectrum of piece is compared, and calculates the light of various types of defect epitaxial wafers
The similarity of the luminescence generated by light luminous spectrum of photoluminescence spectrum and the epitaxial wafer to be tested；
The highest defect epitaxial wafer of similarity of the photoluminescence spectra of photoluminescence spectra and the epitaxial wafer to be tested is selected,
And using defect type belonging to the defect epitaxial wafer selected as defect type belonging to the epitaxial wafer to be tested.
5. according to the method described in claim 3, it is characterized in that, described send out according to the luminescence generated by light of the epitaxial wafer to be tested
The parameter value of each pixel in spectrum determines defect type belonging to the epitaxial wafer to be tested, comprising:
It obtains parameter value in the luminescence generated by light luminous spectrum of the epitaxial wafer to be tested and is less than the position where the pixel of defect threshold value；
According to the position of acquisition, defect type belonging to the epitaxial wafer to be tested is determined.
6. a kind of device of photoluminescence spectra processing, which is characterized in that described device includes:
Spectrum obtains module, for obtaining the photoluminescence spectra of epitaxial wafer to be tested；
Parameter acquisition module, the parameter value of each pixel in the photoluminescence spectra for obtaining the epitaxial wafer to be tested；
Determining module is determined for the parameter value of each pixel in the luminescence generated by light luminous spectrum according to the epitaxial wafer to be tested
The epitaxial wafer to be tested is with the presence or absence of defect and the type of defect.
7. device according to claim 6, which is characterized in that the determining module includes:
Acquisition submodule, the parameter value of each pixel in the photoluminescence spectra for obtaining various types of defect epitaxial wafers；
Comparative sub-module, for respectively by the parameter of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers
Value, is compared with the parameter value of each pixel in the luminescence generated by light luminous spectrum of the epitaxial wafer to be tested, calculates various types of
The similarity of the luminescence generated by light luminous spectrum of the photoluminescence spectra of the defect epitaxial wafer of type and the epitaxial wafer to be tested；
Select submodule, for select photoluminescence spectra and the epitaxial wafer to be tested photoluminescence spectra similarity most
High defect epitaxial wafer；
Defect dipoles submodule, for the photoluminescence spectra of the defect epitaxial wafer when selection and the light of the epitaxial wafer to be tested
When the similarity of photoluminescence spectrum is less than similarity threshold, determining the epitaxial wafer to be tested, there is no defects；When lacking for selection
The photoluminescence spectra and the similarity of the photoluminescence spectra of the epitaxial wafer to be tested for falling into epitaxial wafer are more than or equal to similar
When spending threshold value, determine the epitaxial wafer existing defects to be tested, and using defect type belonging to the defect epitaxial wafer selected as
Defect type belonging to the epitaxial wafer to be tested.
8. device according to claim 6, which is characterized in that the determining module includes:
Pixel determines submodule, and parameter value is less than defect threshold in the luminescence generated by light luminous spectrum for determining the epitaxial wafer to be tested
The pixel of value；
Statistic submodule, parameter value is less than defect threshold value in the luminescence generated by light luminous spectrum for counting the epitaxial wafer to be tested
Ratio shared by pixel；
Defect determines submodule, for determining that the epitaxial wafer to be tested is not present when the ratio of statistics is less than proportion threshold value
Defect；When the ratio of statistics is greater than or equal to proportion threshold value, the epitaxial wafer existing defects to be tested are determined, and according to described
The parameter value of each pixel in the luminescence generated by light luminous spectrum of epitaxial wafer to be tested, determines defect belonging to the epitaxial wafer to be tested
Type.
9. device according to claim 8, which is characterized in that the defect determines that submodule is used for,
Obtain the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers；
It is and described to be tested outer respectively by the parameter value of each pixel in the photoluminescence spectra of various types of defect epitaxial wafers
The parameter value for prolonging each pixel in the luminescence generated by light luminous spectrum of piece is compared, and calculates the light of various types of defect epitaxial wafers
The similarity of the luminescence generated by light luminous spectrum of photoluminescence spectrum and the epitaxial wafer to be tested；
The highest defect epitaxial wafer of similarity of the photoluminescence spectra of photoluminescence spectra and the epitaxial wafer to be tested is selected,
And using defect type belonging to the defect epitaxial wafer selected as defect type belonging to the epitaxial wafer to be tested.
10. device according to claim 8, which is characterized in that the defect determines that submodule is used for,
It obtains parameter value in the luminescence generated by light luminous spectrum of the epitaxial wafer to be tested and is less than the position where the pixel of defect threshold value；
According to the position of acquisition, defect type belonging to the epitaxial wafer to be tested is determined.
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