CN105352610B - A kind of method and its application of test GaAs base semiconductor laser epitaxial wafer emission wavelengths - Google Patents
A kind of method and its application of test GaAs base semiconductor laser epitaxial wafer emission wavelengths Download PDFInfo
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- CN105352610B CN105352610B CN201510821309.1A CN201510821309A CN105352610B CN 105352610 B CN105352610 B CN 105352610B CN 201510821309 A CN201510821309 A CN 201510821309A CN 105352610 B CN105352610 B CN 105352610B
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 115
- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 238000012360 testing method Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 18
- 235000012431 wafers Nutrition 0.000 claims abstract description 82
- 239000011248 coating agent Substances 0.000 claims abstract description 71
- 238000000576 coating method Methods 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000004020 luminiscence type Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 17
- 230000003746 surface roughness Effects 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 59
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- -1 InGaAsP Chemical class 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
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- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention relates to a kind of method and its application of test GaAs base semiconductor laser epitaxial wafer emission wavelengths, including substrate, under-clad layer, active area, top covering, the contact layer set gradually from the bottom to top, specific steps：(1) one layer of deielectric-coating for not absorbing the light that active area is sent is grown on the GaAs base semiconductor lasers epitaxial wafer surface, the value of deielectric-coating refractive index m is 1 ＜ m ＜ n, and n is the refractive index of light that GaAs base semiconductor laser epitaxial wafers are sent in GaAs；The value of deielectric-coating thickness d is the wavelength that 0 ＜ d≤λ/2m, λ is the light that GaAs base semiconductor laser epitaxial wafers are sent；Deielectric-coating rough surface；(2) conventional luminescence generated by light test is carried out；(3) deielectric-coating is removed.Using the method for the invention, the probability that the light that GaAs base semiconductor laser epitaxial wafers are sent is totally reflected when inciding in air greatly reduces, and escapes out the amount of light increase of epitaxial wafer.
Description
Technical field
The present invention relates to a kind of method and its application of test GaAs base semiconductor laser epitaxial wafer emission wavelengths, belong to
Semiconductor laser technical field of measurement and test.
Background technology
Semiconductor laser has small, long lifespan, photoelectric conversion efficiency height, is easy to compatible with integrated circuit etc. excellent
Point, in industry extensive applications such as optical communication, optical storage, industry manufacture and health cares.Wherein, earliest, performance is studied most
Good and most application at present is the semiconductor laser using GaAs substrate.
The operation wavelength of semiconductor laser is determined by the semi-conducting material used in making devices.In semi-conducting material
There is conduction band and valence band, the electronics containing free movement above conduction band, and the hole containing free movement below valence band, conduction band
Between valence band across a forbidden band, when Electron absorption the energy of light from valence band jump in conduction band when, just the energy of light
Amount become electricity, and with electric energy electronics from conduction band rebound valence band, and can electricity energy become light, therefore, semiconductor
The energy gap of material just determines the operation wavelength of device.The development of material science enables us half-and-half to be led using energy band engineering
Body material with various exquisite cuttings are carried out, can make the operation wavelength of semiconductor photoelectric device break through the limit of material energy gap
System expands to broader scope.Using GaAs substrate can carry out epitaxial growth material include AlGaAs, AlGaInP,
The multi-element compounds such as InGaAsP, therefore, the most short feux rouges ripple near 600nm of operation wavelength of GaAs base semiconductor lasers
Section, it is most long can be to the infrared band near 1000nm.
Wavelength is different, and the purposes of laser is also different.The semiconductor laser of red spectral band be mainly used for laser display,
Industry instruction and positioning, laser medicine etc..In red spectral band, the visual sensitivity of human eye with shortening for wavelength of light and
Improve, such as human eye is 3 times of 660nm light to the susceptibility of 635nm light.Therefore, the brightness of laser is not only the same as its work(
Rate is related also related with its wavelength.Ensure the uniformity of red laser brightness, it is necessary to assure its consistent wavelength is good.It is near red
808nm the and 980nm semiconductor lasers of wave section are mainly used for industry manufacture and pumping.Due to the limit of pumped material absorption spectra
System, will obtain high pumping efficiency, the wavelength of pump laser will be within several nanometers near absorption peak.Should at these
It is stringenter to the wavelength requirement of laser in, it is necessary to make the source of laser, i.e. laser epitaxial piece, shining
Wavelength measurement and monitoring.
A kind of test system for improving photoluminescence test effect of semiconductor material
Chinese patent literature CN101949844B discloses a kind of survey for improving photoluminescence test effect of semiconductor material
Test system.The laser of the laser excitation of this system is after speculum conversion direction by lens focus direct irradiation in detected sample
On product, the laser of sample reflection is collected after steering collimates by paraboloidal mirror is sent to spectral measurement system in the form of angle pencil of ray
System.Suitable launch wavelength can be selected according to the characteristic of semi-conducting material, so as to obtain higher photoluminescence intensity, be lifted
Luminescence generated by light power of test and the sensitivity for improving test.But the invention is excellent just for exciting light and test equipment progress
Change, if the light that material internal is sent cannot escape out material, still test the emission wavelength less than material.GaAs base semiconductors
The upper surface layer of laser epitaxial piece is generally heavy doping GaAs, and band gap is smaller, has absorption to make to the light that active area is sent
With.As shown in Figure 1, when light is from when projecting surface for GaAs layers, since GaAs refractive index is larger, most of light can be sent out on surface
Raw total reflection, so as to be absorbed by GaAs layers or other epitaxial layers.By taking the feux rouges of 660nm wavelength as an example, GaAs high refractive index
Up to 3.82, light from the critical angle being totally reflected when injecting air for GaAs layers be only 15 °.Light of the incidence angle less than 15 ° is still
Have more than 1/3 to be reflected back toward inside epitaxial wafer, along with the As layers of absorption to light of surface Ga, common test equipment detector
The emergent light captured is seldom, it is difficult to accurately emission wavelength of the test to epitaxial wafer.
GaAs base semiconductor lasers epitaxial wafer includes substrate, under-clad layer, active area, the upper bag set gradually from the bottom to top
Layer, contact layer, substrate be adapted to epitaxial growth GaAs single-chips, the light that active area is sent from contact layer surface project when,
Most of incline direction incident light can be totally reflected in contact layer surface, and incline direction emergent light 10 can return to GaAs bases and partly lead
Absorbed inside body laser epitaxial wafer and finally；Vertical direction emergent light still suffers from more than 1/3 and is reflected back toward GaAs bases half
Conductor laser epitaxial wafer is internally formed vertical direction reflected light, and is absorbed.Along with absorption of the contact layer surface to light,
The vertical direction emergent light that common test equipment detector captures is seldom, as shown in Figure 1.
The method of existing test GaAs base semiconductor laser epitaxial wafer emission wavelengths is：Contact layer is eroded, is remained
Under top covering Refractive Index of Material it is smaller, the cirtical angle of total reflection is larger, at the same its band gap be more than active area materials band gap, will not
Absorb the light that active area is sent.Although the emission wavelength to epitaxial wafer can be tested, the surface contact layer of epitaxial wafer is destroyed,
Device cannot be made, as shown in Figure 2.
The content of the invention
For the deficiencies in the prior art, the present invention provides one kind to test GaAs base semiconductor laser epitaxial wafers
The method of emission wavelength；
Present invention also offers a kind of GaAs base semiconductor laser epitaxial wafers for being used to test emission wavelength.
Term is explained
Doping concentration, doping concentration described herein are atomic concentration, refer to the number shared by the atom in unit volume.
The technical scheme is that：
A kind of method of test GaAs base semiconductor laser epitaxial wafer emission wavelengths, the GaAs base semiconductor lasers
Epitaxial wafer includes substrate, under-clad layer, active area, top covering, the contact layer set gradually from the bottom to top, and the substrate is outer to be adapted to
The GaAs single-chips of epitaxial growth, the under-clad layer and the top covering be with the matched multi-element compounds of the substrate lattice,
The active area is luminous zone, and the contact layer is the contact layer that Ohmic contact is formed with metal electrode, and specific steps include：
(1) one layer of Jie for not absorbing the light that active area is sent is grown on the GaAs base semiconductor lasers epitaxial wafer surface
Plasma membrane, the value range of the refractive index m of the deielectric-coating is that 1 ＜ m ＜ n, n sends out for the GaAs base semiconductor lasers epitaxial wafer
Refractive index of the light gone out in GaAs；The value range of the thickness d of the deielectric-coating is that 0 ＜ d≤λ/2m, λ is the GaAs
The wavelength for the light that base semiconductor laser epitaxial wafer is sent；The deielectric-coating rough surface；
(2) the GaAs base semiconductor lasers epitaxial wafer obtained to step (1) carries out conventional luminescence generated by light test, obtains
GaAs base semiconductor laser epitaxial wafer emission wavelengths；
(3) deielectric-coating is removed.
The under-clad layer and the top covering are used for limiting the electronics and photon of active area.
The routine luminescence generated by light test, for example, carrying out luminescence generated by light test using PL luminescence generated by lights test system.
The advantage designed herein is, deielectric-coating rough surface, the light that GaAs base semiconductor laser epitaxial wafers are sent
When inciding in air, the probability being totally reflected greatly reduces, and escapes out the light of GaAs base semiconductor laser epitaxial wafers
Quantity increase；The value range of the refractive index m of deielectric-coating is 1 ＜ m ＜ n, and deielectric-coating refractive index is located at air refraction and GaAs
Between refractive index, the deielectric-coating in the range of this has emergent ray anti-reflection effect；The value range of the thickness d of deielectric-coating is 0
＜ d≤λ/2m, the deielectric-coating in this thickness range have emergent ray anti-reflection effect.
It is preferable according to the present invention, after the completion of step (1), to the GaAs base semiconductor lasers epitaxial wafer 100 °-
Made annealing treatment at a temperature of 300 °.
The advantage designed herein is that the deielectric-coating crystal grain after annealing becomes larger, and surface roughness can also become larger, into one
Step reduces the probability that incline direction incident light is totally reflected.
Preferable according to the present invention, the value of the refractive index m of the deielectric-coating is the square root of n, the thickness of the deielectric-coating
Degree d is λ/4m.
The advantage designed herein is, the value of the refractive index m of deielectric-coating is the square root of n, the thickness d of deielectric-coating for λ/
4m, the antireflective effect close to even 100% is can reach for vertical direction emergent light.
Preferable according to the present invention, the deielectric-coating surface roughness Ra is more than 2nm.
SiO preferable according to the present invention, that the deielectric-coating grows for sputtering2、Si3N4、Al2O3、ZrO2。
The advantage designed herein is that the deielectric-coating for sputtering growth is generally polycrystalline structure, more coarse than epi-layer surface, goes out
Penetrate light and easily escape out surface；The SiO that deielectric-coating grows for sputtering2、Si3N4、Al2O3、ZrO2, band gap is larger, does not absorb
The light that GaAs base semiconductor laser epitaxial wafers are sent；Refractive index has emergent ray anti-reflection between air and GaAs
Effect.
It is preferable according to the present invention, the material of the under-clad layer and the top covering for AlGaAs, AlGaInP or
Any of InGaAsP.
It is preferable according to the present invention, the material of the active area is AlGaAs matched with the substrate lattice,
AlGaInP, InGaAsP's is any or with unmatched strain AlGaAs, AlGaInP, the InGaAsP of the substrate lattice
Any, the active area emission wavelength is 600-1000nm.
Preferable according to the present invention, the contact layer is heavy doping GaAs.
A kind of GaAs base semiconductor laser epitaxial wafers for being used to test emission wavelength, including set gradually from the bottom to top
Substrate, under-clad layer, active area, top covering, contact layer, the substrate be adapted to epitaxial growth GaAs single-chips, the lower bag
It with the matched multi-element compounds of the substrate lattice, the active area is luminous zone that layer and the top covering, which are, the contact
Layer is the contact layer that Ohmic contact is formed with metal electrode, and the contact layer surface does not absorb the light that active area is sent equipped with one layer
Deielectric-coating, the value range of the refractive index m of the deielectric-coating is the GaAs base semiconductor lasers extension for 1 ＜ m ＜ n, n
Refractive index of the light that piece is sent in GaAs；The value range of the thickness d of the deielectric-coating is described for 0 ＜ d≤λ/2m, λ
The wavelength for the light that GaAs base semiconductor laser epitaxial wafers are sent；The deielectric-coating rough surface.
Preferable according to the present invention, the value of the refractive index m of the deielectric-coating is the square root of n, the thickness of the deielectric-coating
Spend and be more than 2nm for λ/4m, the deielectric-coating surface roughness Ra.
Beneficial effects of the present invention are：
1st, present media film surface is coarse, and the light that GaAs base semiconductor laser epitaxial wafers are sent is incided in air
The probability of Shi Fasheng total reflections greatly reduces, and escapes out the amount of light increase of epitaxial wafer.
2nd, between air refraction and GaAs refractive index, the thickness d of deielectric-coating takes present media film refractive index m
Value scope is 0 ＜ d≤λ/2m, plays the role of anti-reflection film, if refractive index is suitable, the injection light on normal component can reach
It is theoretic all to pass through, without reflection loss.
3rd, after present media film removes, epitaxial wafer surface is not influenced, epitaxial slice structure will not be destroyed, epitaxial wafer can
Normally to make semiconductor laser.
Brief description of the drawings
Fig. 1 is the structure and beam projecting schematic diagram of GaAs base semiconductor lasers epitaxial wafer of the present invention.
Fig. 2 is the beam projecting schematic diagram of existing test GaAs base semiconductor laser epitaxial wafer emission wavelengths.
Fig. 3 is that a kind of beam projecting of test GaAs base semiconductor laser epitaxial wafer emission wavelengths of the present invention is illustrated
Figure.
In figure, 1, substrate, 2, under-clad layer, 3, active area, 4, top covering, 5, contact layer, 6, vertical direction incident light, 7, hang down
Nogata is to reflected light, and 8, vertical direction emergent light, 9, incline direction incident light, 10, incline direction emergent light, 11, deielectric-coating.
Embodiment
The present invention is further qualified with reference to Figure of description and embodiment, but not limited to this.
Embodiment 1
A kind of method of test GaAs base semiconductor laser epitaxial wafer emission wavelengths, the GaAs base semiconductor lasers
Epitaxial wafer includes substrate 1, under-clad layer 2, active area 3, top covering 4, the contact layer 5 set gradually from the bottom to top, and the substrate 1 is
It is adapted to the GaAs single-chips of epitaxial growth, the under-clad layer 2 and the top covering 4 are Al0.5Ga0.5As, the active area 3 are
Luminous zone, to be located at 800nm attached for the emission wavelength of heavy doping GaAs, GaAs base semiconductor laser epitaxial wafer for the contact layer 5
Closely, the structure of GaAs base semiconductor lasers epitaxial wafer of the present invention and beam projecting schematic diagram are as shown in Figure 1, specific steps
Including：
(1) one layer is grown on the GaAs base semiconductor lasers epitaxial wafer surface and does not absorb the light that active area 3 is sent
Deielectric-coating 11, the value of the refractive index m of the deielectric-coating 11 is 1.45；The light that GaAs base semiconductor laser epitaxial wafers are sent
Refractive index in GaAs is 3.68, and the value of the thickness d of the deielectric-coating 11 is 138nm, 11 rough surface of deielectric-coating
Degree Ra is 5nm；The SiO that the deielectric-coating 11 grows for sputtering2；
(2) the GaAs base semiconductor lasers epitaxial wafer obtained to step (1) carries out conventional luminescence generated by light test, obtains
GaAs base semiconductor laser epitaxial wafer emission wavelengths；
(3) deielectric-coating 11 is removed.
The under-clad layer 2 and the top covering 4 are used for limiting the electronics and photon of active area 3；The contact layer 5 is heavily doped
Miscellaneous GaAs, Ohmic contact is formed with metal electrode.
In this embodiment, 11 surface roughness of deielectric-coating is much larger than the surface roughness of epitaxial layer, incline direction incident light 9
The probability being totally reflected can greatly reduce, and incline direction emergent light 10 can increase.Meanwhile grow the SiO of sputtering2Afterwards, vertically
The transmitance of direction incident light 6 increases to 94% from 66%, and vertical direction emergent light 8 can also increase.Half can thus be tested
The emission wavelength of conductor laser epitaxial wafer.
Embodiment 2
A kind of method of test GaAs base semiconductor laser epitaxial wafer emission wavelengths, the GaAs base semiconductor lasers
Epitaxial wafer includes substrate 1, under-clad layer 2, active area 3, top covering 4, the contact layer 5 set gradually from the bottom to top, and the substrate 1 is
It is adapted to the GaAs single-chips of epitaxial growth, the under-clad layer 2 and the top covering 4 are Al0.5In0.5P, the active area 3 are
Luminous zone, to be located at 660nm attached for the emission wavelength of heavy doping GaAs, GaAs base semiconductor laser epitaxial wafer for the contact layer 5
Closely, the structure of GaAs base semiconductor lasers epitaxial wafer of the present invention and beam projecting schematic diagram are as shown in Figure 1, specific steps
Including：
(1) one layer is grown on the GaAs base semiconductor lasers epitaxial wafer surface and does not absorb the light that active area 3 is sent
Deielectric-coating 11, the value of the refractive index m of the deielectric-coating 11 is 2.01；The light that GaAs base semiconductor laser epitaxial wafers are sent
Refractive index in GaAs is 3.82, and the value of the thickness d of the deielectric-coating 11 is 82nm, 11 surface roughness of deielectric-coating
Ra is 5nm；The Si that the deielectric-coating 11 grows for sputtering3N4；To the GaAs base semiconductor lasers epitaxial wafer in 200 ° of temperature
Under made annealing treatment；
(2) the GaAs base semiconductor lasers epitaxial wafer obtained to step (1) carries out conventional luminescence generated by light test, obtains
GaAs base semiconductor laser epitaxial wafer emission wavelengths；
(3) deielectric-coating 11 is removed.
The under-clad layer 2 and the top covering 4 are used for limiting the electronics and photon of active area 3；The contact layer 5 is heavily doped
Miscellaneous GaAs, can form Ohmic contact with metal electrode.
In this embodiment, the Si of annealing3N411 crystal grain of deielectric-coating becomes larger, and surface roughness can also become larger, and further subtract
The probability that small incline direction incident light 9 is totally reflected.Meanwhile grow Si3N4Afterwards, the transmitance of vertical direction incident light 6 from
66% increases to 98%, and vertical direction emergent light 8 is no better than vertical direction incident light 6.Thus semiconductor laser is arrived in test
The luminous spectrum of epitaxial wafer can be stronger, as a result more accurate.
Embodiment 3
A kind of GaAs base semiconductor laser epitaxial wafers for being used to test emission wavelength, the GaAs base semiconductor lasers
Epitaxial wafer includes substrate 1, under-clad layer 2, active area 3, top covering 4, the contact layer 5 set gradually from the bottom to top, and the substrate 1 is
It is adapted to the GaAs single-chips of epitaxial growth, the under-clad layer 2 and the top covering 4 are Al0.5Ga0.5As, the active area 3 are
Luminous zone, to be located at 800nm attached for the emission wavelength of heavy doping GaAs, GaAs base semiconductor laser epitaxial wafer for the contact layer 5
Closely, 5 surface of contact layer is equipped with one layer of deielectric-coating 11 for not absorbing the light that active area 3 is sent, the refraction of the deielectric-coating 11
The value of rate m is 1.45；Refractive index of the light that GaAs base semiconductor laser epitaxial wafers are sent in GaAs is 3.68, described
The value of the thickness d of deielectric-coating 11 is 138nm, and 11 surface roughness Ra of deielectric-coating is 5nm；The deielectric-coating 11 is sputtering
The SiO of growth2。
Embodiment 4
A kind of GaAs base semiconductor laser epitaxial wafers for being used to test emission wavelength, the GaAs base semiconductor lasers
Epitaxial wafer includes substrate 1, under-clad layer 2, active area 3, top covering 4, the contact layer 5 set gradually from the bottom to top, and the substrate 1 is
It is adapted to the GaAs single-chips of epitaxial growth, the under-clad layer 2 and the top covering 4 are Al0.5In0.5P, the active area 3 are
Luminous zone, to be located at 660nm attached for the emission wavelength of heavy doping GaAs, GaAs base semiconductor laser epitaxial wafer for the contact layer 5
Closely, 5 surface of contact layer is equipped with one layer of deielectric-coating 11 for not absorbing the light that active area 3 is sent, the refraction of the deielectric-coating 11
The value of rate m is 2.01；Refractive index of the light that GaAs base semiconductor laser epitaxial wafers are sent in GaAs is 3.82, described
The value of the thickness d of deielectric-coating 11 is 82nm, and 11 surface roughness Ra of deielectric-coating is 5nm；The deielectric-coating 11 is sputtering
The Si of growth3N4。
Claims (10)
1. a kind of method of test GaAs base semiconductor laser epitaxial wafer emission wavelengths, outside the GaAs base semiconductor lasers
Prolong substrate, under-clad layer, active area, top covering, contact layer that piece includes setting gradually from the bottom to top, the substrate is to be adapted to extension
The GaAs single-chips of growth, the under-clad layer and the top covering are and the matched multi-element compounds of the substrate lattice, institute
It is luminous zone to state active area, and the contact layer is the contact layer that Ohmic contact is formed with metal electrode, it is characterised in that specific step
Suddenly include：
(1) one layer of medium for not absorbing the light that active area is sent is grown on the GaAs base semiconductor lasers epitaxial wafer surface
Film, the value range of the refractive index m of the deielectric-coating send for 1 ＜ m ＜ n, n for the GaAs base semiconductor lasers epitaxial wafer
Refractive index of the light in GaAs；The value range of the thickness d of the deielectric-coating is that 0 ＜ d≤λ/2m, λ is the GaAs bases
The wavelength for the light that semiconductor laser device epitaxial wafer is sent；The deielectric-coating rough surface；
(2) the GaAs base semiconductor lasers epitaxial wafer obtained to step (1) carries out conventional luminescence generated by light test, obtains GaAs bases
Semiconductor laser device epitaxial wafer emission wavelength；
(3) deielectric-coating is removed.
2. a kind of method of test GaAs base semiconductor laser epitaxial wafer emission wavelengths according to claim 1, it is special
Sign is, after the completion of step (1), anneals to the GaAs base semiconductor lasers epitaxial wafer at a temperature of 100 ° -300 °
Processing.
3. a kind of method of test GaAs base semiconductor laser epitaxial wafer emission wavelengths according to claim 1, it is special
Sign is that the value of the refractive index m of the deielectric-coating is the square root of n, and the thickness d of the deielectric-coating is λ/4m.
4. a kind of method of test GaAs base semiconductor laser epitaxial wafer emission wavelengths according to claim 1, it is special
Sign is that the deielectric-coating surface roughness Ra is more than 2nm.
5. a kind of method of test GaAs base semiconductor laser epitaxial wafer emission wavelengths according to claim 1, it is special
Sign is that the deielectric-coating is the SiO of sputtering growth2、Si3N4、Al2O3、ZrO2。
6. a kind of method of test GaAs base semiconductor laser epitaxial wafer emission wavelengths according to claim 1, it is special
Sign is that the material of the under-clad layer and the top covering is any of AlGaAs, AlGaInP or InGaAsP.
7. a kind of method of test GaAs base semiconductor laser epitaxial wafer emission wavelengths according to claim 1, it is special
Sign is, the material of the active area be with any of the substrate lattice matched AlGaAs, AlGaInP, InGaAsP or
Any, active area emission wavelength of person and unmatched strain AlGaAs, AlGaInP, the InGaAsP of the substrate lattice
For 600-1000nm.
8. according to a kind of side of any test GaAs base semiconductor lasers epitaxial wafer emission wavelengths of claim 1-7
Method, it is characterised in that the contact layer is heavy doping GaAs.
9. a kind of GaAs base semiconductor laser epitaxial wafers for being used to test emission wavelength, including the lining set gradually from the bottom to top
Bottom, under-clad layer, active area, top covering, contact layer, the substrate be adapted to epitaxial growth GaAs single-chips, the under-clad layer
And it with the matched multi-element compounds of the substrate lattice, the active area is luminous zone that the top covering, which is, the contact layer
To form the contact layer of Ohmic contact with metal electrode, it is characterised in that the contact layer surface does not absorb active equipped with one layer
The deielectric-coating for the light that area is sent, the value range of the refractive index m of the deielectric-coating is that 1 ＜ m ＜ n, n is the GaAs base semiconductors
Refractive index of the light that laser epitaxial piece is sent in GaAs；The value range of the thickness d of the deielectric-coating for 0 ＜ d≤λ/
2m, λ are the wavelength for the light that the GaAs base semiconductor lasers epitaxial wafer is sent；The deielectric-coating rough surface.
10. a kind of GaAs base semiconductor laser epitaxial wafers for being used to test emission wavelength according to claim 9, it is special
Sign is, the value of the refractive index m of the deielectric-coating is the square root of n, and the thickness d of the deielectric-coating is λ/4m, the medium
Film surface roughness Ra is more than 2nm.
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