CN105350071B - 一种可抑制波动的直拉硅单晶炉液位检测方法 - Google Patents
一种可抑制波动的直拉硅单晶炉液位检测方法 Download PDFInfo
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- CN105350071B CN105350071B CN201510697587.0A CN201510697587A CN105350071B CN 105350071 B CN105350071 B CN 105350071B CN 201510697587 A CN201510697587 A CN 201510697587A CN 105350071 B CN105350071 B CN 105350071B
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- 239000007788 liquid Substances 0.000 title claims abstract description 69
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims description 29
- 238000003384 imaging method Methods 0.000 claims abstract description 15
- 238000005259 measurement Methods 0.000 claims abstract description 15
- 238000004458 analytical method Methods 0.000 claims abstract description 8
- 238000006073 displacement reaction Methods 0.000 claims abstract description 8
- 238000001914 filtration Methods 0.000 claims description 8
- 238000004364 calculation method Methods 0.000 claims description 6
- 230000011218 segmentation Effects 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 25
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000005303 weighing Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN105350071B true CN105350071B (zh) | 2017-09-22 |
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Families Citing this family (11)
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CN105821469A (zh) * | 2016-05-16 | 2016-08-03 | 西安创联新能源设备有限公司 | 单晶炉硅溶液液面位置检测方法、装置及调整系统 |
CN106544723B (zh) * | 2017-01-13 | 2018-11-13 | 中山大学 | 晶体生长界面扰动的原位探测方法、控制方法及控制系统 |
CN109023512B (zh) * | 2018-08-29 | 2020-07-17 | 上海新昇半导体科技有限公司 | 长晶炉校验系统和长晶炉校验方法 |
US12002234B2 (en) | 2018-11-26 | 2024-06-04 | Longi Green Energy Technology Co., Ltd. | Crystal line growing state detection method, apparatus and device for silicon rod |
CN110363786A (zh) * | 2019-06-12 | 2019-10-22 | 西安理工大学 | 基于贝叶斯融合的单晶炉液位检测激光光斑中心定位方法 |
CN110261842B (zh) * | 2019-07-08 | 2021-09-14 | 北京云迹科技有限公司 | 适用于机器人的探测激光安装位置调整方法及装置 |
CN110559676B (zh) * | 2019-08-29 | 2024-04-09 | 南通东概念新材料有限公司 | 一种用激光标定法实时监控旋蒸液体积的系统及方法 |
CN110554055A (zh) * | 2019-09-06 | 2019-12-10 | 安徽师范大学 | 一种基于激光反射图像的罐头胀罐在线检测设备 |
CN110983432B (zh) * | 2019-12-25 | 2021-04-06 | 南京晶升能源设备有限公司 | 一种半导体硅材料晶体生长的图像识别控制方法 |
CN115728231A (zh) * | 2021-08-31 | 2023-03-03 | 内蒙古中环协鑫光伏材料有限公司 | 一种液面抖动检测方法及装置 |
CN114387248B (zh) * | 2022-01-12 | 2022-11-25 | 苏州天准科技股份有限公司 | 一种硅料熔化度监测方法、存储介质、终端和拉晶设备 |
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2015
- 2015-10-23 CN CN201510697587.0A patent/CN105350071B/zh active Active
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JPH09326026A (ja) * | 1996-06-07 | 1997-12-16 | Advantest Corp | 画像処理方法及び画像処理装置 |
CN101008104A (zh) * | 2006-12-28 | 2007-08-01 | 西安理工大学 | 直拉法单晶硅生长过程中的熔体液面位置检测方法 |
CN101008102A (zh) * | 2006-12-28 | 2007-08-01 | 西安理工大学 | 单晶炉中籽晶与熔融硅液面接触的检测方法 |
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CN101782414A (zh) * | 2010-01-28 | 2010-07-21 | 杭州慧翔电液技术开发有限公司 | 直拉硅单晶炉的硅熔体液面位置及单晶棒直径的测量方法 |
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Effective date of registration: 20200805 Address after: E2-002, Science Park, Xi'an University of technology, No.26, gazeng Road, Zhangba Street office, hi tech Zone, Xi'an City, Shaanxi Province Patentee after: Xi'an yisiwei Equipment Technology Co.,Ltd. Address before: 710077 Shaanxi city of Xi'an province high tech Zone gazelle Road No. 26 Co-patentee before: Xi'an core magnetic intelligent technology partnership (limited partnership) Patentee before: Xi'an Polytechnic Asset Management Co.,Ltd. Effective date of registration: 20200805 Address after: 710077 Shaanxi city of Xi'an province high tech Zone gazelle Road No. 26 Patentee after: Xi'an Polytechnic Asset Management Co.,Ltd. Address before: 710048 Shaanxi city of Xi'an Province Jinhua Road No. 5 Patentee before: XI'AN University OF TECHNOLOGY Effective date of registration: 20200805 Address after: 710077 Shaanxi city of Xi'an province high tech Zone gazelle Road No. 26 Co-patentee after: Liu Ding Patentee after: Xi'an Polytechnic Asset Management Co.,Ltd. Co-patentee after: Zhao Yue Co-patentee after: Jiao Shangbin Co-patentee after: Jiang Lei Co-patentee after: Liang Yanming Co-patentee after: Wu Shihai Co-patentee after: Jiang Jian Address before: 710077 Shaanxi city of Xi'an province high tech Zone gazelle Road No. 26 Patentee before: Xi'an Polytechnic Asset Management Co.,Ltd. Effective date of registration: 20200805 Address after: 710077 Shaanxi city of Xi'an province high tech Zone gazelle Road No. 26 Co-patentee after: Xi'an core magnetic intelligent technology partnership (limited partnership) Patentee after: Xi'an Polytechnic Asset Management Co.,Ltd. Address before: 710077 Shaanxi city of Xi'an province high tech Zone gazelle Road No. 26 Co-patentee before: Liu Ding Patentee before: Xi'an Polytechnic Asset Management Co.,Ltd. Co-patentee before: Zhao Yue Co-patentee before: Jiao Shangbin Co-patentee before: Jiang Lei Co-patentee before: Liang Yanming Co-patentee before: Wu Shihai Co-patentee before: Jiang Jian |
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Effective date of registration: 20210922 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee after: Xi'an yisiwei Material Technology Co.,Ltd. Patentee after: Xi'an yisiwei Equipment Technology Co.,Ltd. Address before: E2-002, Science Park, Xi'an University of technology, No.26, gazelle Road, Zhangba Street office, high tech Zone, Xi'an City, Shaanxi Province, 710077 Patentee before: Xi'an yisiwei Equipment Technology Co.,Ltd. |
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Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: Xi'an Xinhui Equipment Technology Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: Xi'an yisiwei Equipment Technology Co.,Ltd. |
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