CN105336729A - Capacitance testing structure and testing method for monitoring dielectric film thickness - Google Patents
Capacitance testing structure and testing method for monitoring dielectric film thickness Download PDFInfo
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- CN105336729A CN105336729A CN201410345591.6A CN201410345591A CN105336729A CN 105336729 A CN105336729 A CN 105336729A CN 201410345591 A CN201410345591 A CN 201410345591A CN 105336729 A CN105336729 A CN 105336729A
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- bottom crown
- deielectric
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Abstract
The invention discloses a capacitance testing structure and a testing method for monitoring a dielectric film thickness. The structure comprises an upper pole plate and a lower pole plate, wherein the upper pole plate comprises a protruding portion used for connecting a first testing pad; the lower pole plate comprises a protruding portion used for connecting a second testing pad; a dielectric film to be monitored is arranged between the upper pole plate and the lower pole plate; for the upper pole plate and the lower pole plate, one protruding portion of one pole plate is not overlapped with any part of another pole plate. By using the capacitance testing structure and the testing method for monitoring the dielectric film thickness, a capacitance value in an ideal state can be acquired and the dielectric film thickness can be accurately monitored.
Description
Technical field
The present invention relates to testing capacitor technical field, particularly relating to a kind of testing capacitor structure for monitoring medium thickness and method of testing
Background technology
In the manufacture process of display, in order to confirm that whether the result of each technique is can to accept or preferably, should the thickness of test component or structure, resistance, closeness, dustiness, critical dimension and characteristic electron etc.In order to not destroy device in such measuring process, the predetermined portions of panel is formed the pattern being called testing element group (TEG), performing process with the condition that reality performs treatment conditions identical, then assessing the feature of corresponding process or device by measuring TEG pattern.
In the manufacture process of display, need the film forming procedure carried out repeatedly, as silicon nitride film, silicon oxide film, photoresistance glued membrane etc., whether thickness suitably greatly can affect the final performance of display, and therefore Thickness Monitoring is extremely important.Monitoring for thickness adopts the method for testing capacitor usually, namely capacitance structure is formed, film to be measured is formed between upper bottom crown as deielectric-coating, and the dielectric constant of deielectric-coating is fixed, by the size of testing capacitor reflection thickness, electric capacity is little, then deielectric-coating is thicker, electric capacity is large, then deielectric-coating is thinner.In this test process, the structure of electric capacity directly affects the accuracy of test result, and then the monitoring of impact to thickness.
Fig. 1 is the schematic diagram of testing capacitor structure in prior art, as shown in Figure 1, top crown 2 and the overlapping setting of bottom crown 1, monitoring deielectric-coating is formed between bottom crown overlapping part 3, suppose that needing to measure area is the deielectric-coating of a × a, the area of overlapping part 3 is then made to be a × a, but in order to input test signal, top crown 2 comprises the ledge 2-1 be connected with the first testing cushion 4, bottom crown 1 also comprises the ledge 1-1 be connected with the second testing cushion, then there is the overlapping part that area is x × y in the ledge 2-1 of top crown 2 and bottom crown 1, then the actual electric capacity recorded is C=ε × (a × a+x × y)/d, have more a capacitance ε × x × y/d, affect test result, and then the monitoring of impact to medium thickness.
Therefore a kind of testing capacitor structure and the method for testing of monitoring medium thickness is exactly needed at present.
Summary of the invention
The object of the invention is to propose a kind of testing capacitor structure and the method for testing of monitoring medium thickness, the capacitance of perfect condition can be obtained, accurately monitor medium thickness.
For reaching this object, the present invention by the following technical solutions:
For monitoring a testing capacitor structure for medium thickness, comprising: top crown, described top crown comprises the first ledge for being connected with the first testing cushion; Bottom crown, described bottom crown comprises the second ledge for being connected with the second testing cushion; Deielectric-coating to be monitored is arranged between described top crown and bottom crown, and described top crown and bottom crown are configured such that the ledge of pole plate is not overlapping with any part of another pole plate.
Wherein, described top crown and bottom crown stagger overlapping setting.
Wherein, described medium to be monitored is arranged between bottom crown overlapping part.
Wherein, the shape of described top crown and bottom crown is all rectangle.
Wherein, the dielectric constant of described medium is fixed.
Present invention also offers a kind of capacitance test method monitoring medium thickness, comprising: provide a bottom crown, the second ledge of described bottom crown is connected with the first testing cushion; Described bottom crown forms deielectric-coating to be monitored; Described deielectric-coating provides upper substrate, first ledge of described top crown is connected with the second testing cushion, described top crown and bottom crown are configured such that the ledge of pole plate is not overlapping with any part of another pole plate, at described first testing cushion and the second testing cushion input signal, carry out the test of electric capacity, and then the thickness of monitoring deielectric-coating.
Wherein, described top crown and bottom crown stagger overlapping setting.
Wherein, described medium to be monitored is arranged between bottom crown overlapping part.
Wherein, the shape of described top crown and bottom crown is all rectangle.
Wherein, the dielectric constant of described medium is fixed.
The testing capacitor structure of the monitoring medium thickness that the present invention proposes and method of testing, can obtain the capacitance of perfect condition, closer to the real data of actual process, accurately monitors medium thickness.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of testing capacitor structure of the prior art.
The schematic diagram of testing capacitor structure of Fig. 2 for providing in embodiment.
Wherein, description of reference numerals is as follows:
1, bottom crown; The ledge of 1-1, bottom crown; 2, top crown; The ledge of 2-1, top crown; 3, the part that upper bottom crown is overlapping; 4, the second testing cushion; 5, the first testing cushion.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not entire infrastructure.
A kind of testing capacitor structure for monitoring medium thickness of present embodiment, its structural representation as shown in Figure 2.This structure comprises: top crown 201, and described top crown comprises the first ledge 201-1, and described first ledge 201-1 is used for being connected with the first testing cushion 501; Bottom crown 101, described bottom crown comprises the second ledge 101-1, and described second jut 101-1 is used for being connected with the second testing cushion 401; Described top crown and bottom crown are configured such that the ledge of pole plate is not overlapping with any part of another pole plate.
As Fig. 2 can find out, the overlapping setting of upper bottom crown, overlapping partial-length and width are all a, this is only a kind of hypothesis, in fact length and the width of overlapping part freely can be designed according to the needs of test, as needed test area to be the electric capacity of the medium of a × b, can be a by the Design of length of pole plate overlapping part, width design be b.Also freely can design the shape of bottom crown simultaneously, in order to technique convenience and save the consideration of position, be preferably the shape of rectangle by upper and lower plate designs usually.
During test, deielectric-coating to be monitored is only arranged between the overlapping part of upper bottom crown.When test signal inputs from the first testing cushion 501 and the second testing cushion 401, the capacitance recorded is C=ε × a × a/d, here ε represents dielectric constant, a × a represents the area of capacitance structure, this area is consistent with testing the desirable area needed, d is the distance between two-plate, namely the thickness of medium to be monitored.Because the dielectric constant of deielectric-coating to be monitored immobilizes, the thickness of the capacitance reflection deielectric-coating surveyed, can reach the object of the thickness of monitoring deielectric-coating.And above-mentioned test area is consistent with the desirable area of needs, can obtain close to the data in actual process, accurately monitor medium thickness.
As seen from the above, because the ledge of pole plate is not overlapping with any part of another pole plate, the area of overlapping part can be set to the area of required test thickness, just can measure required electric capacity to entirely accurate, thus accurately monitor medium thickness, there will not be error.
Present embodiment also provides a kind of capacitance test method monitoring medium thickness, comprising: provide a bottom crown 101, and the second ledge 101-1 of described bottom crown is connected with the first testing cushion 501; Described bottom crown forms deielectric-coating to be monitored; Described deielectric-coating provides top crown 101, the ledge 201-1 of described top crown is connected with the second testing cushion 401, described top crown and bottom crown are configured such that the ledge of pole plate is not overlapping with any part of another pole plate, at described first testing cushion and the second testing cushion input signal, carry out the test of electric capacity, and then the thickness of monitoring deielectric-coating.
Note, above are only preferred embodiment of the present invention and institute's application technology principle.Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and can not protection scope of the present invention be departed from.Therefore, although be described in further detail invention has been by above embodiment, the present invention is not limited only to above embodiment, when not departing from the present invention's design, can also comprise other Equivalent embodiments more, and scope of the present invention is determined by appended right.
Claims (7)
1. a testing capacitor structure, for monitoring the thickness of deielectric-coating, is characterized in that, described testing capacitor structure comprises:
Top crown, comprises the first ledge;
Bottom crown, to stagger overlapping setting with described top crown, described bottom crown comprises the second ledge;
First testing cushion, is connected with the first ledge of described top crown;
Second testing cushion, is connected with described second ledge of described bottom crown;
One in described first testing cushion and the second testing cushion for input test signal, another is for exporting test signal; Wherein
Described top crown and bottom crown are configured such that the second ledge of the first ledge of described top crown or bottom crown is not overlapping with any part of another pole plate.
2. a testing capacitor structure as claimed in claim 1, described deielectric-coating wherein to be monitored is arranged between bottom crown overlapping part.
3. a testing capacitor structure as claimed in claim 1, the shape of wherein said top crown and bottom crown is all rectangle.
4. a testing capacitor structure as claimed in claim 1, the dielectric constant of wherein said deielectric-coating is fixed.
5. a capacitance test method, for monitoring the thickness of deielectric-coating, is characterized in that, described capacitance test method comprises:
There is provided a bottom crown, described bottom crown comprises the second ledge;
Described bottom crown forms deielectric-coating;
There is provided a top crown, be arranged on described deielectric-coating, described top crown and described bottom crown stagger overlapping setting, and described top crown comprises the first ledge;
One first testing cushion is provided, is connected with the first ledge of described top crown;
One second testing cushion is provided, is connected with the second ledge of described bottom crown;
Described top crown and bottom crown are configured such that the ledge of described top crown or described bottom crown is not overlapping with any part of another pole plate;
An input signal from described first testing cushion and the second testing cushion, from another output signal, carries out the test of the electric capacity of described deielectric-coating, and then monitors the thickness of described deielectric-coating.
6. a capacitance test method as claimed in claim 5, the shape of wherein said top crown and bottom crown is all rectangle.
7. the capacitance test method as described in claim 5 or 6, the dielectric constant of wherein said deielectric-coating is fixed.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410345591.6A CN105336729A (en) | 2014-07-18 | 2014-07-18 | Capacitance testing structure and testing method for monitoring dielectric film thickness |
| KR1020150100895A KR20160010348A (en) | 2014-07-18 | 2015-07-16 | Capacitance testing structure and capacitance testing method for monitoring film thickness of dielectrics |
| JP2015142923A JP2016025355A (en) | 2014-07-18 | 2015-07-17 | Electrostatic capacitance test structure and electrostatic capacitance test method for monitoring thickness of dielectric |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410345591.6A CN105336729A (en) | 2014-07-18 | 2014-07-18 | Capacitance testing structure and testing method for monitoring dielectric film thickness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105336729A true CN105336729A (en) | 2016-02-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410345591.6A Pending CN105336729A (en) | 2014-07-18 | 2014-07-18 | Capacitance testing structure and testing method for monitoring dielectric film thickness |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2016025355A (en) |
| KR (1) | KR20160010348A (en) |
| CN (1) | CN105336729A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113658939A (en) * | 2021-08-12 | 2021-11-16 | 长鑫存储技术有限公司 | Semiconductor substrate and testing method thereof |
| WO2022142372A1 (en) * | 2020-12-28 | 2022-07-07 | 无锡华润上华科技有限公司 | Test structure for floating source contact etching process and monitoring method |
| CN115655094A (en) * | 2022-11-02 | 2023-01-31 | 北京工业大学 | Angular displacement measurement capacitance sensor with unequal polar plate areas |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6882689B2 (en) | 2016-09-01 | 2021-06-02 | Jsr株式会社 | Selective Modification Method and Composition of Substrate Surface |
| KR102376126B1 (en) | 2016-09-01 | 2022-03-18 | 제이에스알 가부시끼가이샤 | Method and composition for selective modification of substrate surface |
| WO2018155555A1 (en) | 2017-02-27 | 2018-08-30 | Jsr株式会社 | Method for selectively modifying substrate surface |
| CN107153136B (en) * | 2017-05-11 | 2023-10-31 | 王若茗 | Stacked capacitor bank test device |
| WO2019167704A1 (en) | 2018-02-28 | 2019-09-06 | Jsr株式会社 | Substrate surface modification method, composition and polymer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040054426A (en) * | 2002-12-18 | 2004-06-25 | 엘지.필립스 엘시디 주식회사 | Test pattern for measuring thickness of insulation layer in liquid crystal display device and method thereof |
| US20060132148A1 (en) * | 2004-10-11 | 2006-06-22 | Cheah Chin B | Via etch monitoring |
| CN103026169A (en) * | 2010-06-04 | 2013-04-03 | 造型逻辑有限公司 | Determining layer thickness |
| CN103367329A (en) * | 2013-07-23 | 2013-10-23 | 上海华力微电子有限公司 | The semiconductor structure that is used for test MIM electric capacity |
-
2014
- 2014-07-18 CN CN201410345591.6A patent/CN105336729A/en active Pending
-
2015
- 2015-07-16 KR KR1020150100895A patent/KR20160010348A/en not_active Application Discontinuation
- 2015-07-17 JP JP2015142923A patent/JP2016025355A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040054426A (en) * | 2002-12-18 | 2004-06-25 | 엘지.필립스 엘시디 주식회사 | Test pattern for measuring thickness of insulation layer in liquid crystal display device and method thereof |
| US20060132148A1 (en) * | 2004-10-11 | 2006-06-22 | Cheah Chin B | Via etch monitoring |
| CN103026169A (en) * | 2010-06-04 | 2013-04-03 | 造型逻辑有限公司 | Determining layer thickness |
| CN103367329A (en) * | 2013-07-23 | 2013-10-23 | 上海华力微电子有限公司 | The semiconductor structure that is used for test MIM electric capacity |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022142372A1 (en) * | 2020-12-28 | 2022-07-07 | 无锡华润上华科技有限公司 | Test structure for floating source contact etching process and monitoring method |
| CN113658939A (en) * | 2021-08-12 | 2021-11-16 | 长鑫存储技术有限公司 | Semiconductor substrate and testing method thereof |
| CN113658939B (en) * | 2021-08-12 | 2023-10-03 | 长鑫存储技术有限公司 | Semiconductor substrate and test method thereof |
| CN115655094A (en) * | 2022-11-02 | 2023-01-31 | 北京工业大学 | Angular displacement measurement capacitance sensor with unequal polar plate areas |
| CN115655094B (en) * | 2022-11-02 | 2024-03-29 | 北京工业大学 | Angular displacement measurement capacitance sensor with unequal polar plate areas |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016025355A (en) | 2016-02-08 |
| KR20160010348A (en) | 2016-01-27 |
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Application publication date: 20160217 |