CN105322052A - Backside laser membrane opening method and system of back passivation solar cell - Google Patents

Backside laser membrane opening method and system of back passivation solar cell Download PDF

Info

Publication number
CN105322052A
CN105322052A CN201510095122.8A CN201510095122A CN105322052A CN 105322052 A CN105322052 A CN 105322052A CN 201510095122 A CN201510095122 A CN 201510095122A CN 105322052 A CN105322052 A CN 105322052A
Authority
CN
China
Prior art keywords
solar cell
laser
lbg
backside laser
passivation solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510095122.8A
Other languages
Chinese (zh)
Inventor
李慧
董建文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changzhou Trina Solar Energy Co Ltd
Original Assignee
Changzhou Trina Solar Energy Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou Trina Solar Energy Co Ltd filed Critical Changzhou Trina Solar Energy Co Ltd
Priority to CN201510095122.8A priority Critical patent/CN105322052A/en
Publication of CN105322052A publication Critical patent/CN105322052A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a backside laser membrane opening method of a back passivation solar cell. The backside laser membrane opening method comprises a laser grooving process and a dust removal process and is characterized in that the dust removal process is a pressurized gas blowing process synchronously carried out with the laser grooving process. Meanwhile, the invention also discloses a backside laser membrane opening system applying the above method of the back passivation solar cell. The backside laser membrane opening system comprises a laser grooving device and a dust removal device and is characterized in that the dust removal device is a pressurized gas blowing air knife, wherein the pressurized gas blowing air knife is arranged at a starting point position of laser grooving. By the method and the system, the problem of dust attachment during back surface laser grooving of the back passivation solar cell in the prior art is solved. With the method and the system, the back passivation process is simplified, the parallel resistance of a cell piece is improved, the reverse electric leakage is reduced, and the power loss of a module is reduced.

Description

A kind of backside laser of carrying on the back passivation solar cell opens film method and system thereof
Technical field
The present invention relates to a kind of back of the body passivation solar cell, particularly relate to a kind of backside laser of carrying on the back passivation solar cell and open film method, meanwhile, the invention still further relates to a kind of the present invention also provides a kind of backside laser of the back of the body passivation solar cell of said method that adopts to open membranous system.
Background technology
For improving the electricity conversion of solar cell, current solar cell is by adopting the mode of chemical deposition to form one deck passivating film overleaf overleaf, local passivating film is removed by lbg, conventional technological process comprises: cleaning after making herbs into wool, diffusion, back surface polishing, cleaning, back laminate film, laser backside fluting, laser, silk screen printing+sintering, as shown in Figure 1.
The laser equipment that current back of the body passivation back side fluting is conventional mainly contains two kinds: picosecond laser and nanosecond laser.In silicon chip working process, picosecond laser damage is little, but equipment cost is expensive, is unfavorable for volume production; Nanosecond laser equipment cost is low, but damage is large, thermal effect is large, affects the photoelectric conversion efficiency of cell piece further.In laser open membrane process, although laser equipment itself is furnished with dust cleaning apparatus, in order to extract the powder produced in the course of processing, but due to thermal effect, still have a large amount of powder to be attached to silicon chip surface cannot remove, cause that cell piece parallel resistance is on the low side, reverse leakage is bigger than normal, hidden danger is existed to assembly hot spot, in particular under low irradiance environment, component power loss will be very large.Wherein, this performance of nanosecond laser will be especially obvious, can puncture screen printing screens time serious, affect half tone useful life, increase production cost.
Summary of the invention
The present invention is directed in prior art, the problem of dust attachment in back of the body passivation solar energy back surface lbg process, provides a kind of backside laser of carrying on the back passivation solar cell to open film method, simple flow technique, improve the parallel resistance of cell piece, reduce reverse leakage, reduce component power loss.
For this reason, the present invention adopts following technical scheme:
The backside laser of carrying on the back passivation solar cell opens a film method, comprises lbg operation and dust-removing process, and its spy is: described dust-removing process is that the band pressed gas synchronously carried out with lbg operation purges operation.
Further, described band pressed gas is nitrogen or compressed air, and the pressure limit of gas is 0.4-0.8Mpa.
Further, the gas outlet of described band pressed gas is positioned at the start position of lbg.
Further, also comprise synchronously carry out with dust-removing process take out dirt operation.
Simultaneously, the present invention also provides a kind of backside laser adopting above-mentioned backside laser to open the back of the body passivation solar cell of film method to open membranous system, comprise lbg device and dust cleaning apparatus, it is characterized in that: described dust cleaning apparatus purges air knife for band pressed gas, be with pressed gas purging air knife to be arranged at the start position of lbg.
Further, described band pressed gas is nitrogen or compressed air, and the pressure limit of gas is 0.4-0.8Mpa.
Further, also comprise and take out dirt device, that takes out dirt device takes out the final position that dirt mouth is arranged at lbg.
The present invention compared with prior art, has following beneficial effect:
1. the dust of rear surface of solar cell attachment is removed, completely as shown in Fig. 4 A, 4B;
2. the parallel resistance of battery is restored, and reverse leakage is reduced to <0.1 from >0.2, and because leaking electricity, the cell piece inefficacy ratio caused obviously improves.
3. simplify the back of the body passivation flow process of back of the body passivation solar cell, improve production efficiency.
Accompanying drawing explanation
Fig. 1 is the back of the body passivation flow process of carrying on the back passivation solar cell in prior art;
Fig. 2 is the schematic diagram that backside laser of the present invention opens film method and system thereof;
Fig. 3 is the back of the body passivation flow process of the back of the body passivation solar cell after adopting the present invention;
Fig. 4 A is the silicon chip back surface in prior art after lbg under microscope;
Fig. 4 B is the silicon chip back surface after the lbg after adopting the present invention under microscope.
Embodiment
Be further described in detail structure of the present invention below in conjunction with the drawings and specific embodiments, part same as the prior art in the present invention is with reference to prior art.
As shown in Figure 2, the backside laser of back of the body passivation solar cell of the present invention opens film method, comprises lbg operation and dust-removing process, and described dust-removing process is the N synchronously carried out with lbg operation 2operation is swept in air-blowing, N 2gas is band pressed gas, and its pressure limit is 0.4-0.8Mpa, and in the present embodiment, Stress control is at about 0.6Mpa; N 2the gas outlet of gas is positioned at the start position of lbg.Also comprise synchronously carry out with dust-removing process take out dirt operation.
Increase N 2after operation is swept in air-blowing, the dust of the attachment of silicon chip back surface can be removed completely, and the silicon chip back surface before and after employing the present invention under microscope as illustrated in figures 4 a and 4b; No longer need matting after lbg, back of the body passivation flow process is simplified, and improves production efficiency, effectively saves production cost; After simplifying, flow process as shown in Figure 3.
Meanwhile, as shown in Figure 2, the present invention also provides a kind of backside laser of the back of the body passivation solar cell of said method that adopts to open membranous system, and comprise lbg device and dust cleaning apparatus, described dust cleaning apparatus is N 2air knife is swept in air-blowing, N 2gas gas pressure range is 0.4-0.8Mpa, and in the present embodiment, Stress control is at about 0.6Mpa; N 2the start position that air knife is arranged at lbg on laser processing table top is swept in air-blowing.Also comprise and take out dirt device, the dirt mouth of taking out taking out dirt device is arranged near the final position of lbg.
By installing a N on the laser processing table top of lbg device 2air knife is swept in air-blowing, and air knife position is fixed on the initial position that laser starts to process.Along with laser position moves, laser is while processing, and the dust of generation will by N 2blowing afloat, avoid being attached to silicon chip back surface, collecting finally by taking out dirt device.Increase N 2after air knife purges, the dust of the attachment of silicon chip back surface can be removed completely, does not need after cleaning after laser, and back of the body passivation flow process is simplified, and after simplifying, flow process is as Fig. 3, effectively can save production cost.
The present invention is applicable to single, the polycrystalline back of the body passivation product of solar cell picosecond laser and nanosecond laser processing.
Certainly, the present invention also has other execution modes, is only preferred embodiment of the present invention above, is not used for limiting practical range of the present invention, and all equivalences done according to the content of the application's the scope of the claims change and modify, and all should be technology category of the present invention.

Claims (7)

1. the backside laser of carrying on the back passivation solar cell opens a film method, comprises lbg operation and dust-removing process, and its spy is: described dust-removing process is that the band pressed gas synchronously carried out with lbg operation purges operation.
2. the backside laser of back of the body passivation solar cell according to claim 1 opens film method, it is characterized in that: described band pressed gas is nitrogen or compressed air, and the pressure limit of gas is 0.4-0.8Mpa.
3. the backside laser of back of the body passivation solar cell according to claim 1 opens film method, it is characterized in that: the gas outlet of described band pressed gas is positioned at the start position of lbg.
4. the backside laser of back of the body passivation solar cell according to claim 1 opens film method, it is characterized in that: also comprise synchronously carry out with dust-removing process take out dirt operation.
5. the backside laser adopting the arbitrary described backside laser of claim 1-4 to open the back of the body passivation solar cell of film method opens membranous system, comprise lbg device and dust cleaning apparatus, it is characterized in that: described dust cleaning apparatus purges air knife for band pressed gas, be with pressed gas purging air knife to be arranged at the start position of lbg.
6. the backside laser of back of the body passivation solar cell according to claim 5 opens membranous system, it is characterized in that: described band pressed gas is nitrogen or compressed air, and the pressure limit of gas is 0.4-0.8Mpa.
7. the backside laser of back of the body passivation solar cell according to claim 5 opens membranous system, it is characterized in that: also comprise and take out dirt device, and that takes out dirt device takes out the final position that dirt mouth is arranged at lbg.
CN201510095122.8A 2015-03-04 2015-03-04 Backside laser membrane opening method and system of back passivation solar cell Pending CN105322052A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510095122.8A CN105322052A (en) 2015-03-04 2015-03-04 Backside laser membrane opening method and system of back passivation solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510095122.8A CN105322052A (en) 2015-03-04 2015-03-04 Backside laser membrane opening method and system of back passivation solar cell

Publications (1)

Publication Number Publication Date
CN105322052A true CN105322052A (en) 2016-02-10

Family

ID=55249053

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510095122.8A Pending CN105322052A (en) 2015-03-04 2015-03-04 Backside laser membrane opening method and system of back passivation solar cell

Country Status (1)

Country Link
CN (1) CN105322052A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011091650A1 (en) * 2010-01-29 2011-08-04 东莞宏威数码机械有限公司 Laser marking dust-removal device and dust-removal method
CN202411658U (en) * 2012-01-13 2012-09-05 深圳市创益科技发展有限公司 Dust removing device used for laser groove of thin-film solar cell
CN103890978A (en) * 2011-10-28 2014-06-25 应用材料公司 Back contact through-holes formation process for solar cell fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011091650A1 (en) * 2010-01-29 2011-08-04 东莞宏威数码机械有限公司 Laser marking dust-removal device and dust-removal method
CN103890978A (en) * 2011-10-28 2014-06-25 应用材料公司 Back contact through-holes formation process for solar cell fabrication
CN202411658U (en) * 2012-01-13 2012-09-05 深圳市创益科技发展有限公司 Dust removing device used for laser groove of thin-film solar cell

Similar Documents

Publication Publication Date Title
CN102299206B (en) Heterojunction solar cell and manufacturing method thereof
CN103383975A (en) Two-sided passivation efficient heterojunction battery and manufacturing method thereof
CN103594558B (en) A kind of preparation method of high efficiency solar cell
CN107706246A (en) The back of the body passivation solar cell and its manufacture method that a kind of back pastes directly burn
CN104821345A (en) Method for preparing anti-potential induced degradation solar cell
CN105097997A (en) Preparation method of N-type silicon chip a-Si:H film for heterojunction with intrinsic thin layer (HIT) battery
CN101431113A (en) Back-passivated high-efficiency solar cell structure and technique for producing the same
CN102790116A (en) Inverted GaInP/GaAs/Ge/Ge four-junction solar cell and preparation method thereof
CN105322052A (en) Backside laser membrane opening method and system of back passivation solar cell
CN201440416U (en) Fast recovery diode
CN105845755A (en) Heterojunction solar cell and manufacture method therefor
CN206574733U (en) A kind of silica-based solar cell piece lift sliver apparatus
CN204927300U (en) PERC solar cell
CN202540939U (en) Pre-screen-printing silicon chip cleaning device for solar batteries
CN103170463A (en) Cleaning and handling method of screen printing plate
CN204668333U (en) A kind of production equipment of anti-potential induction attenuation solar cell
CN102881754A (en) Back point contact cell with bubbling-free aluminum oxide and preparation method thereof
CN207116453U (en) A kind of tin plating welding air knife component
CN110429149A (en) A kind of HJT cell piece and HJT component preparation method
CN104779321B (en) A kind of method for improving stria cell piece qualification rate
CN107899378A (en) A kind of application of metal organic complex film as gas separation membrane
CN208562593U (en) Modified form solar battery sheet diffusion furnace
CN105702779A (en) Method for manufacturing no-clean solar cell module
CN203325952U (en) Two-sided passivated efficient heterojunction cell
CN103746028B (en) The processing method of the local electric leakage in crystal silicon solar batteries sheet edge

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20160210