CN105321832A - 封装基板的加工方法 - Google Patents
封装基板的加工方法 Download PDFInfo
- Publication number
- CN105321832A CN105321832A CN201510423873.8A CN201510423873A CN105321832A CN 105321832 A CN105321832 A CN 105321832A CN 201510423873 A CN201510423873 A CN 201510423873A CN 105321832 A CN105321832 A CN 105321832A
- Authority
- CN
- China
- Prior art keywords
- packaging
- base plate
- laser light
- along
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 238000003672 processing method Methods 0.000 title claims abstract description 18
- 229920005989 resin Polymers 0.000 claims abstract description 35
- 239000011347 resin Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000004806 packaging method and process Methods 0.000 claims description 93
- 230000011218 segmentation Effects 0.000 claims description 51
- 239000003822 epoxy resin Substances 0.000 claims description 11
- 229920000647 polyepoxide Polymers 0.000 claims description 11
- 238000005286 illumination Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 2
- 230000009189 diving Effects 0.000 abstract 4
- 239000007789 gas Substances 0.000 description 16
- 238000010521 absorption reaction Methods 0.000 description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Laser Beam Processing (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-153646 | 2014-07-29 | ||
JP2014153646A JP2016030277A (ja) | 2014-07-29 | 2014-07-29 | パッケージ基板の加工方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105321832A true CN105321832A (zh) | 2016-02-10 |
Family
ID=55248959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510423873.8A Pending CN105321832A (zh) | 2014-07-29 | 2015-07-17 | 封装基板的加工方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2016030277A (ko) |
KR (1) | KR20160014524A (ko) |
CN (1) | CN105321832A (ko) |
TW (1) | TW201606938A (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108281347A (zh) * | 2017-01-06 | 2018-07-13 | 株式会社迪思科 | 树脂封装基板的加工方法 |
CN111432978A (zh) * | 2017-09-13 | 2020-07-17 | 诚解电子私人有限公司 | 用于以聚合物树脂铸模化合物为基底的基板的切割方法及其系统 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004526335A (ja) * | 2001-05-24 | 2004-08-26 | クリック・アンド・ソッファ・インベストメンツ・インコーポレイテッド | ウェハーの二段式レーザー切断 |
JP2010021507A (ja) * | 2007-10-11 | 2010-01-28 | Hitachi Chem Co Ltd | 光半導体素子搭載用基板及びその製造方法、並びに光半導体装置及びその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6420245B1 (en) * | 1999-06-08 | 2002-07-16 | Kulicke & Soffa Investments, Inc. | Method for singulating semiconductor wafers |
JP5166929B2 (ja) | 2008-03-18 | 2013-03-21 | 株式会社ディスコ | 光デバイスの製造方法 |
DE102011054891B4 (de) * | 2011-10-28 | 2017-10-19 | Osram Opto Semiconductors Gmbh | Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds |
-
2014
- 2014-07-29 JP JP2014153646A patent/JP2016030277A/ja active Pending
-
2015
- 2015-06-10 TW TW104118765A patent/TW201606938A/zh unknown
- 2015-07-08 KR KR1020150097034A patent/KR20160014524A/ko unknown
- 2015-07-17 CN CN201510423873.8A patent/CN105321832A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004526335A (ja) * | 2001-05-24 | 2004-08-26 | クリック・アンド・ソッファ・インベストメンツ・インコーポレイテッド | ウェハーの二段式レーザー切断 |
JP2010021507A (ja) * | 2007-10-11 | 2010-01-28 | Hitachi Chem Co Ltd | 光半導体素子搭載用基板及びその製造方法、並びに光半導体装置及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108281347A (zh) * | 2017-01-06 | 2018-07-13 | 株式会社迪思科 | 树脂封装基板的加工方法 |
CN111432978A (zh) * | 2017-09-13 | 2020-07-17 | 诚解电子私人有限公司 | 用于以聚合物树脂铸模化合物为基底的基板的切割方法及其系统 |
Also Published As
Publication number | Publication date |
---|---|
TW201606938A (zh) | 2016-02-16 |
KR20160014524A (ko) | 2016-02-11 |
JP2016030277A (ja) | 2016-03-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160210 |
|
WD01 | Invention patent application deemed withdrawn after publication |