CN105308716A - 离子阱装置和制造该离子阱装置的方法 - Google Patents
离子阱装置和制造该离子阱装置的方法 Download PDFInfo
- Publication number
- CN105308716A CN105308716A CN201480026893.5A CN201480026893A CN105308716A CN 105308716 A CN105308716 A CN 105308716A CN 201480026893 A CN201480026893 A CN 201480026893A CN 105308716 A CN105308716 A CN 105308716A
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- CN
- China
- Prior art keywords
- electrode
- rail
- ion trap
- center
- lateral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/0013—Miniaturised spectrometers, e.g. having smaller than usual scale, integrated conventional components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/06—Electron- or ion-optical arrangements
- H01J49/062—Ion guides
- H01J49/065—Ion guides having stacked electrodes, e.g. ring stack, plate stack
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/26—Mass spectrometers or separator tubes
- H01J49/34—Dynamic spectrometers
- H01J49/42—Stability-of-path spectrometers, e.g. monopole, quadrupole, multipole, farvitrons
- H01J49/4205—Device types
- H01J49/422—Two-dimensional RF ion traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20130121955A KR101482440B1 (ko) | 2013-10-14 | 2013-10-14 | 이온 트랩 장치 및 그 제작 방법 |
KR10-2013-0121955 | 2013-10-14 | ||
PCT/KR2014/007364 WO2015056872A1 (ko) | 2013-10-14 | 2014-08-08 | 이온 트랩 장치 및 그 제작 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105308716A true CN105308716A (zh) | 2016-02-03 |
CN105308716B CN105308716B (zh) | 2017-01-25 |
Family
ID=52588962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480026893.5A Active CN105308716B (zh) | 2013-10-14 | 2014-08-08 | 离子阱装置和制造该离子阱装置的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9548179B2 (zh) |
KR (1) | KR101482440B1 (zh) |
CN (1) | CN105308716B (zh) |
WO (1) | WO2015056872A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020034925A1 (zh) * | 2018-08-14 | 2020-02-20 | 华为技术有限公司 | 离子光腔耦合系统及方法 |
CN112992628A (zh) * | 2019-12-17 | 2021-06-18 | 霍尼韦尔国际公司 | 用于离子阱的装置、系统和方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101482440B1 (ko) * | 2013-10-14 | 2015-01-15 | 에스케이텔레콤 주식회사 | 이온 트랩 장치 및 그 제작 방법 |
KR101725793B1 (ko) | 2014-10-30 | 2017-04-12 | 에스케이 텔레콤주식회사 | 이온 트랩 구조를 관통하는 레이저 사용을 위한 mems 기반 3차원 이온트랩 장치 및 그 제작 방법 |
KR101725788B1 (ko) * | 2014-10-31 | 2017-04-12 | 에스케이 텔레콤주식회사 | 절연층 노출을 방지한 이온 트랩 장치 및 그 제작 방법 |
US9704701B2 (en) * | 2015-09-11 | 2017-07-11 | Battelle Memorial Institute | Method and device for ion mobility separations |
CN113345790A (zh) | 2015-10-07 | 2021-09-03 | 巴特尔纪念研究院 | 用于利用交流波形进行离子迁移率分离的方法和设备 |
US10692710B2 (en) | 2017-08-16 | 2020-06-23 | Battelle Memorial Institute | Frequency modulated radio frequency electric field for ion manipulation |
GB2579314A (en) | 2017-08-16 | 2020-06-17 | Battelle Memorial Institute | Methods and systems for ion manipulation |
EP3692564A1 (en) | 2017-10-04 | 2020-08-12 | Battelle Memorial Institute | Methods and systems for integrating ion manipulation devices |
JP6860155B2 (ja) * | 2017-10-18 | 2021-04-14 | 国立大学法人東京工業大学 | ジャイロ、角度計測方法 |
US11876092B2 (en) * | 2020-07-31 | 2024-01-16 | Quantinuum Llc | Ion trap apparatus with integrated switching apparatus |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5248883A (en) * | 1991-05-30 | 1993-09-28 | International Business Machines Corporation | Ion traps of mono- or multi-planar geometry and planar ion trap devices |
KR100534172B1 (ko) * | 1998-12-29 | 2006-03-14 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 스패이서 형성 방법_ |
US7081623B2 (en) * | 2003-09-05 | 2006-07-25 | Lucent Technologies Inc. | Wafer-based ion traps |
US7154088B1 (en) * | 2004-09-16 | 2006-12-26 | Sandia Corporation | Microfabricated ion trap array |
US7012250B1 (en) * | 2004-12-03 | 2006-03-14 | Lucent Technologies Inc. | Wafer supported, out-of-plane ion trap devices |
WO2007052273A2 (en) * | 2005-11-02 | 2007-05-10 | Ben Gurion University Of The Negev Research And Development Authority | Novel material and process for integrated ion chip |
US7928375B1 (en) * | 2007-10-24 | 2011-04-19 | Sandia Corporation | Microfabricated linear Paul-Straubel ion trap |
EP2390899B1 (en) * | 2010-05-27 | 2012-07-04 | Universität Innsbruck | Apparatus and method for trapping charged particles and performing controlled interactions between them |
CN102163531B (zh) * | 2011-03-10 | 2013-01-09 | 中国科学院合肥物质科学研究院 | 一种基于mems工艺的平板线型离子阱质量分析器及其制作方法 |
US9177814B2 (en) * | 2013-03-15 | 2015-11-03 | International Business Machines Corporation | Suspended superconducting qubits |
KR101482440B1 (ko) * | 2013-10-14 | 2015-01-15 | 에스케이텔레콤 주식회사 | 이온 트랩 장치 및 그 제작 방법 |
-
2013
- 2013-10-14 KR KR20130121955A patent/KR101482440B1/ko active IP Right Grant
-
2014
- 2014-08-08 CN CN201480026893.5A patent/CN105308716B/zh active Active
- 2014-08-08 WO PCT/KR2014/007364 patent/WO2015056872A1/ko active Application Filing
-
2015
- 2015-10-08 US US14/878,375 patent/US9548179B2/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020034925A1 (zh) * | 2018-08-14 | 2020-02-20 | 华为技术有限公司 | 离子光腔耦合系统及方法 |
US11404179B2 (en) | 2018-08-14 | 2022-08-02 | Huawei Technologies Co., Ltd. | Ion-optical cavity coupling system and method |
CN112992628A (zh) * | 2019-12-17 | 2021-06-18 | 霍尼韦尔国际公司 | 用于离子阱的装置、系统和方法 |
Also Published As
Publication number | Publication date |
---|---|
US20160027604A1 (en) | 2016-01-28 |
US9548179B2 (en) | 2017-01-17 |
CN105308716B (zh) | 2017-01-25 |
KR101482440B1 (ko) | 2015-01-15 |
WO2015056872A1 (ko) | 2015-04-23 |
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TR01 | Transfer of patent right |
Effective date of registration: 20190219 Address after: geneva Co-patentee after: SNU R&DB Foundation Patentee after: ID quantum technologies, Inc. Address before: Seoul, South Kerean Co-patentee before: SNU R&DB Foundation Patentee before: SK Telecommunication Co., Ltd. |
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TR01 | Transfer of patent right | ||
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Effective date of registration: 20210202 Address after: Innsbruck Patentee after: Alpai quantum technology Co. Address before: geneva Patentee before: ID Quantique S.A. Patentee before: Seoul National University Industry University Cooperation |
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TR01 | Transfer of patent right |