CN105308507B - Substrate board treatment and device making method - Google Patents

Abstract

The present invention provides a kind of substrate board treatment and device making method that the substrate of high-quality can be produced with high production rate.This substrate board treatment and device making method include the first supporting member, in the side region in illumination region and view field, to support the side in light shield and substrate along in such a way that regulation curvature bending is at the first face of cylinder planar；Second supporting member in another party region in illumination region and view field, supports another party in light shield and substrate in a manner of along defined second face；And mobile mechanism, rotate the first supporting member, the one party in light shield and substrate for supporting first supporting member moves on scan exposure direction.Projection optical system on the plane of exposure of substrate, will include on scan exposure direction at two the light beam of best focus position be projected to view field.

Description

Substrate board treatment and device making method

Technical field

The pattern of light shield is projected at the substrate for exposing the pattern on substrate and on the substrate the present invention relates to a kind of Manage device, device making method and exposure method.

Background technique

There is a kind of device inspection apparatus of the various devices such as the display device or semiconductor of manufacture liquid crystal display etc..Device Manufacture system has the substrate board treatments such as exposure device.Substrate board treatment is configured at the light shield of illumination region by being formed in The picture of pattern on (or graticule) projects on substrate for being configured at view field etc., and the pattern is exposed on substrate.Base Light shield used in plate processing unit is usually planar, but known is also had in order to continuous to multiple device patterns on substrate Ground is scanned exposure and is arranged to cylindric light shield (patent document 1).

In addition, having a kind of projection aligner being recorded in patent document 2 as substrate board treatment.Patent document 2 The projection aligner of middle record includes substrate holder, with make on one-dimensional movement direction the surface of sensitive substrate with by The mode that the optimal imaging face for the pattern image that projection optical system projects only tilts specified amount relatively keeps sensitive substrate On substrate objective table；With holder driving unit, with during scan exposure along sensitive substrate inclined direction move Dynamic mode linkedly makes substrate holder in the optical axis of projection optical system with the movement of substrate objective table in one-dimensional direction Direction on move.Projection aligner utilizes above structure, can change and throw according to the position of the scan exposure of one-dimensional square It penetrates in the focus state of the light beam of the plane of exposure of sensitive substrate.

Existing technical literature

Patent document

Patent document 1: International Publication No. 2008/029917

Patent document 2: No. 2830492 bulletins of Japanese Patent No.

Summary of the invention

As recorded in patent document 2, focus state is changed by one side, is exposed on one side, even if because of light The light beam and exposure that cover and the offset or the offset of optical system of the relativeness of substrate etc. cause projection optical system to project In the case that relationship between face changes, it can be also exposed under the focus state comprising best focus position.By This, is able to suppress the variation of the image contrast exposed in sensitive substrate (photoresist layer).

But the projection aligner recorded in patent document 2 makes substrate relative to projection optics using substrate holder Device (projection optical system) inclination.Therefore, the adjustment (control) of relative position becomes complicated.In particular, on to substrate Each of multiple exposure areas (irradiation) are by light shield and substrate relative scanning and the step-scan side that keeps substrate stepping mobile In formula, inclining for Repetitive controller substrate holder at high speed is required whenever being scanned exposure to each exposure area on substrate Tiltedly and the movement to focus direction, control become complicated, and cause to generate vibration.

In addition, in the substrate board treatment of scan exposure mode, if the exposure region on substrate on scan exposure direction The width in domain is small, then the light exposure for giving sensitive substrate also tails off.Therefore, it is necessary to increase the exposure area being projected on substrate Exposure light or slows down the speed of scan exposure in the illumination of per unit area.Conversely, if increasing on scan exposure direction The width of exposure area on substrate, the then quality (transfer reproducibility) for being formed by pattern sometimes can decline.

Mode of the invention is designed to provide at a kind of substrate of substrate that can produce high-quality with high production rate Manage device, device making method and exposure method.

First method according to the present invention provides a kind of substrate board treatment, to be placed in illumination light with autogamy in future Illumination region light shield pattern the light beam projection optical system that is projected to the view field configured with substrate substrate at Device is managed, which includes the first supporting member, the side in the illumination region and the view field In region, supported in the light shield and the substrate by along in such a way that regulation curvature bending is at the first face of cylinder planar A side；Second supporting member, in another party region in the illumination region and the view field, along regulation The mode in the second face support another party in the light shield and the substrate；And mobile mechanism, make first bearing Component rotation, the one party in the light shield and the substrate for supporting first supporting member is on scan exposure direction Mobile, the projection optical system will include best at two on the scan exposure direction on the plane of exposure of the substrate The light beam of focal position is projected to the view field.

Second method according to the present invention provides a kind of device making method comprising: it is supplied to the substrate board treatment To the substrate, the pattern of the light shield is formed on the substrate using substrate board treatment described in first method.

Third Way according to the present invention, provides a kind of exposure method, and autogamy in future is placed in the illumination region of illumination light The light beam of pattern of light shield be projected to the view field configured with substrate, the exposure method include: in the illumination region and In a side region in the view field, supported by along in such a way that regulation curvature bending is at the first face of cylinder planar A side in the light shield and the substrate；In another party region in the illumination region and the view field, with edge As defined in the mode in the second face support another party in the light shield and the substrate；Support first face described One party in light shield and the substrate is rotated along first face, the light shield and the base for supporting first face One party in plate moves on scan exposure direction；With will be on the scan exposure direction on the plane of exposure of the substrate Light beam including best focus position at two is projected to the view field.

Invention effect

Mode according to the present invention, by will have optimum focusing at two on the scan exposure direction of the plane of exposure of substrate The light beam of position is projected to view field, and the substrate of high-quality can be produced with high production rate.

Detailed description of the invention

Fig. 1 is the figure for showing the structure of device inspection apparatus of first embodiment.

Fig. 2 is the integrally-built figure for showing the exposure device (substrate board treatment) of first embodiment.

Fig. 3 is the figure of the illumination region for showing exposure device shown in Fig. 2 and the configuration of view field.

Fig. 4 is the figure for showing the structure of lamp optical system and projection optical system of exposure device shown in Fig. 2.

Fig. 5 is the figure for large showing the state of illuminating bundle and projected light beam on light shield.

Fig. 6 A is the explanatory diagram of the exposure relation of plane of the projection image planes for showing the pattern of light shield and substrate.

Fig. 6 B is the chart for showing the appearance of variation of the defocus amount in exposed width.

Fig. 7 is the integrally-built figure for showing the exposure device (substrate board treatment) of second embodiment.

Fig. 8 is the explanatory diagram of the exposure relation of plane of the projection image planes for showing the pattern of light shield and substrate.

Fig. 9 is the chart for showing exposure coordinates with an example of the relationship defocused.

Figure 10 is to show the chart defocused with an example for putting the relationship as intensity.

Figure 11 is the chart of an example of the variation for showing defocus amount and the relationship of intensity difference.

Figure 12 is the chart for showing an example of the relationship of contrast variation for defocus amount and L/S.

Figure 13 is the chart for showing an example of the relationship of the variation of contrast ratio for defocus amount and L/S.

Figure 14 is an example of the relationship for showing the CD of defocus amount and L/S and cutting level (slice level) Chart.

Figure 15 is the chart for showing an example of the relationship of contrast variation for defocus amount and isolated line.

Figure 16 is the chart for showing an example of the relationship of the variation of contrast ratio for defocus amount and isolated line.

Figure 17 is the chart of an example of the relationship for showing the CD of defocus amount and isolated line and cutting level.

Figure 18 is the integrally-built figure for showing the exposure device (substrate board treatment) of third embodiment.

Figure 19 is the integrally-built figure for showing the exposure device (substrate board treatment) of the 4th embodiment.

Figure 20 is the explanatory diagram of the exposure relation of plane of the projection image planes for showing the pattern of light shield and substrate.

Figure 21 is the flow chart for showing exposure method.

Figure 22 is the flow chart for showing device making method.

Specific embodiment

Mode for carrying out the present invention (embodiment) is directed at while referring to attached drawing to be described in detail.It is below The content recorded in embodiment is not intended to limit the present invention.In addition, including this field in the constituent element of following record Technical staff be being readily apparent that or substantially the same element.Moreover, the constituent element recorded below can be appropriate group It closes.In addition, various omissions, replacement or change can be carried out to constituent element in the range of not departing from the gist of the invention. For example, in the following embodiments, although being illustrated to the case where manufacturing flexible display as device, and unlimited In this.Also circuit board, semiconductor substrate etc. can be manufactured as device.

[first embodiment]

First embodiment is exposure device to the substrate board treatment of substrate application exposure-processed.In addition, exposure dress It sets to be assembled in and the substrate after exposure is applied in device inspection apparatus of the various processing to manufacture device.Firstly, the device system of being directed to The system of making is illustrated.

< device inspection apparatus >

Fig. 1 is the figure for showing the structure of device inspection apparatus of first embodiment.Device inspection apparatus 1 shown in FIG. 1 It is assembly line (flexible display manufacture assembly line) of the manufacture as the flexible display of device.As flexible display, such as There is organic el display etc..The device inspection apparatus 1 uses so-called roll-to-roll (Roll to Roll) mode, this is roll-to-roll (Roll to Roll) mode, which refers to from by the supply of flexible substrate P wound into rolls, transports the substrate P with volume FR1, right After the substrate P transported is applied continuously in various processing, furl treated substrate P as flexible device to recycling volume FR2.In the device inspection apparatus 1 of first embodiment, shows from supply and volume FR1 is used to transport the base as the sheet material of film-form Plate P, from supply with roll up the substrate P that transports of FR1 successively pass through n platform processing unit U1, U2, U3, U4, U5 ... Un is until being furled Example until recycling and using volume FR2.Firstly, being illustrated for the substrate P of the process object as device inspection apparatus 1.

Substrate P uses the foil (sheet metal) etc. formed such as resin film, the metal or alloy as stainless steel.As The material of resin film containing such as polyvinyl resin, acrylic resin, polyester resin, Ethylene Vinyl Ester Copolymers resin, is gathered Vinyl chloride resin, celluosic resin, polyamide, polyimide resin, polycarbonate resin, polystyrene resin, acetic acid One of vinylester resin is two or more.

Substrate P is preferably selected such as thermal expansion coefficient and is not obvious big material, so that can actually ignore right Because of deflection caused by being heated in the various processing that substrate P applies.Thermal expansion coefficient for example can be by mixing inorganic filler It is smaller than threshold value corresponding with technological temperature etc. together in being set in resin film.Inorganic filler for example can be titanium oxide, Zinc oxide, aluminium oxide, silica etc..In addition, substrate P can be through manufactures such as float techniques with a thickness of 100 μm or so of pole The individual layers of thin glass are also possible to paste the laminated body of above-mentioned resin film, foil etc. and formation on the very thin glass.

For the substrate P constituted in this way by being wound into web-like into FR1 is rolled up for the supply, which, which uses, rolls up FR1 It is mounted in device inspection apparatus 1.Supply is installed and is transported with the device inspection apparatus 1 of volume FR1 to from supply with FR1 is rolled up Substrate P repeats the various processing for manufacturing a device.Therefore, substrate P that treated becomes multiple devices and is connected State.That is, becoming the substrate of layout with the substrate P that volume FR1 is transported from supply.In addition, substrate P can first pass through regulation in advance Pre-treatment its surfaction is made into its surface activation, be used for alternatively, being formed with by stamped method (minute-pressure mould) etc. on surface The small next door of precise pattern constructs (sag and swell).

Substrate P that treated is recovered as recycling with FR2 is rolled up and being wound into web-like.Recycling is pacified with volume FR2 Loaded on cutter device (not shown).Be equipped with the recycling cutter device of volume FR2 pass through will treated substrate P by each device Part is split (cutting) to form multiple devices.For the size of substrate P, such as width direction (direction as short side) Size be 10cm~2m or so, the size of length direction (direction as long side) is 10m or more.In addition, the size of substrate P It is not limited to above-mentioned size.

Hereinafter, being illustrated referring to Fig.1 to device inspection apparatus 1.In Fig. 1 just using X-direction, Y-direction and Z-direction The orthogonal coordinate system of friendship.X-direction is volume FR1 and the recycling direction of volume FR2 of connection supply in the horizontal plane, is in Fig. 1 Left and right directions.Y-direction is direction orthogonal with X-direction in the horizontal plane, is the front-rear direction in Fig. 1.Y-direction is as supply With the axial direction of volume FR1 and recycling volume FR2.Z-direction is vertical direction, is the up and down direction in Fig. 1.

Device inspection apparatus 1 has the substrate feeding device 2 of supplying substrate P, to the substrate supplied by substrate feeding device 2 P applies processing unit U1~Un of various processing, returns the substrate for the substrate P recycling for applying processing by processing unit U1~Un Receiving apparatus 4, the host control device 5 that each device of device inspection apparatus 1 is controlled.

Supply volume FR1 is installed in a rotatable way in substrate feeding device 2.Substrate feeding device 2 have from The supply installed transports the position in width direction (Y-direction) of the driven roller R1 of substrate P, adjustment substrate P with volume FR1 Marginal position controller EPC1.Driven roller R1 rotates while clamping the front and back sides of substrate P, and substrate P is used along from supply Volume FR1 is transported towards recycling with the carry direction of volume FR2, thus supplies substrate P to processing unit U1~Un.At this point, edge Positioner EPC1 is so that position of the substrate P at the end (edge) of width direction falls in ± ten relative to target position Mode in the range of several μm~tens μm or so moves substrate P in the direction of the width, to correct substrate P in the direction of the width Position.

Recycling volume FR2 is installed in a rotatable way in substrate recyclable device 4.Substrate recyclable device 4 has will Substrate P that treated pulls to the driven roller R2 of the recycling volume side FR2, adjusts the position in width direction (Y-direction) of substrate P The marginal position controller EPC2 set.Substrate recyclable device 4 is revolved while clamping the front and back sides of substrate P using driven roller R2 Turn, pull substrate P to carry direction, and make recycling volume FR2 rotation, thus rolls substrate P.At this point, marginal position control Device EPC2 processed is constituted in the same manner as marginal position controller EPC1, the position of amendment substrate P in the direction of the width, to avoid substrate End (edge) in the width direction of P generates deviation in width direction.

Processing unit U1 is the painting that photonasty functional liquid is applied on the surface of the substrate P supplied from substrate feeding device 2 Coating apparatus.As photonasty functional liquid, using such as photoresist, photonasty silane coupling agent (hydrophilic and hydrophobic modification agent), Reducing agent, UV curable resin solution etc. is electroplated in photonasty.Processing unit U1 is successively set from the upstream side of the carry direction of substrate P There are applying mechanism Gp1 and drier Gp2.Applying mechanism Gp1 has the roller platen DR1 and roller platen DR1 for being wound with substrate P Opposite application roll DR2.Applying mechanism Gp1 utilizes coining in the state that the substrate P supplied is wound in roller platen DR1 Roller DR1 and application roll DR2 clamps substrate P.Then, applying mechanism Gp1 is by rotating roller platen DR1 and application roll DR2, It moves substrate P along carry direction on one side, applies photonasty functional liquid using application roll DR2 on one side.Drier Gp2 is by blowing Perhaps the dry air such as dry air is made hot wind with removing the solute contained in photonasty functional liquid (solvent or water) out Substrate P coated with photonasty functional liquid is dry, and photonasty functional layer is formed in substrate P.

Processing unit U2 is will be from processing unit in order to keep the photonasty functional layer on the surface for being formed in substrate P stable U1 carries the heating device that the substrate P come is heated to predetermined temperature (for example, several 10~120 DEG C or so).Processing unit U2 is from base The upstream side of the carry direction of plate P is successively arranged heating chamber HA1 and cooling chamber HA2.It is equipped in the inside of heating chamber HA1 Multiple rollers and multiple air turning-bars (air turn bar), multiple rollers and multiple air turning-bars constitute removing for substrate P Transport path.Multiple rollers are set as being in rolling contact with the back side of substrate P, and multiple air turning-bars are arranged to the not surface with substrate P The state of side contacts.In order to extend the transport path of substrate P, multiple rollers and multiple air turning-bars to form removing for snake shape The mode in fortune path configures.It is carried on one side by the transport path along snake shape by the substrate P in heating chamber HA1, on one side It is heated to predetermined temperature.In order to make temperature and subsequent handling (processing unit U3) in the heating chamber HA1 substrate P heated Environment temperature is consistent, and substrate P is cooled to environment temperature by cooling chamber HA2.It is equipped in the inside of cooling chamber HA2 multiple Roller, in the same manner as heating chamber HA1, in order to extend the transport path of substrate P, multiple rollers are to form the transport path of snake shape Mode configures.It is carried by the transport path along snake shape by the substrate P in cooling chamber HA2, is cooled on one side on one side.? Downstream side in the carry direction of cooling chamber HA2 is equipped with driven roller R3, and driven roller R3 is clamped on one side through cooling chamber HA2's Substrate P rotates on one side, thus supplies substrate P towards processing unit U3.In addition, heating chamber HA1 is to the heating of substrate P in base In the case that plate P is the resin films such as PET (two rouge of poly terephthalic acid second) or PEN (polyethylene naphthalate), most It is set as well being no more than its glass transition temperature.

Processing unit (substrate board treatment) U3 is to be directed to from the surface that processing unit U2 is supplied to be formed with photosensitive sexual function The exposure device of the patterns such as the circuit of substrate (sensitive substrate) P projection exposure display of layer or wiring.Details exists It is hereinafter described, processing unit U3 is obtained illuminating bundle by light shield M reflection by irradiating illuminating bundle to the light shield M of reflection-type To projected light beam projection exposure in substrate P.Processing unit U3, which has to the downstream side of carry direction, to be transported from processing unit U2 supply substrate P driven roller R4, adjust substrate P the position in width direction (Y-direction) marginal position controller EPC3.Driven roller R4 rotates while clamping the front and back sides of substrate P, and substrate P is transported to the downstream side of carry direction, by This is supplied to the substrate supporting cylinder (otherwise referred to as rotating cylinder) in exposure position supporting substrates P.

Marginal position controller EPC3 is constituted in the same manner as marginal position controller EPC1, corrects substrate P in width direction On position so that exposure position (substrate supporting cylinder) substrate P width direction become target position.In addition, processing dress Setting U3 has in the state of assigning slackness to the substrate P after exposure, transports two groups of substrate P to the downstream side of carry direction Driven roller R5, R6.Driven roller R5 cooperates with driven roller R4 before, and defined tension is assigned in the carry direction of substrate P.Two Group driven roller R5, R6 is configured in a manner of being separated by defined interval in the carry direction in substrate P.Driven roller R5 holds carrying Substrate P upstream side and rotation, driven roller R6 hold the downstream side of the substrate P of carrying and rotation, thus supply substrate P To processing unit U4.At this point, more leaning on carry direction than driven roller R6 so can absorb since substrate P is endowed slackness Downstream side the variation of transporting velocity that generates of position, the exposure caused by the variation because of transporting velocity to substrate P can be broken off The influence of light processing.In addition, a part of the mask pattern in order to make light shield M is (right as relatively being aligned with substrate P It is quasi-), aligming microscope AM1, AM2 of alignment mark that detection is previously formed in substrate P etc. are equipped in processing unit U3.

Processing unit U4 is to development treatment, the nothing for carrying the progress wet type of the substrate P after the exposure come from processing unit U3 It is electrolysed the wet type processing device of electroplating processes etc..It includes in the inside of processing unit U4 along vertical direction (Z-direction) stratification 3 treatment troughs BT1, BT2, BT3 and handling substrate P multiple rollers.Multiple rollers are to form substrate P successively from 3 treatment troughs The inside of BT1, BT2, BT3 transport path by way of configure.Downstream side in the carry direction for the treatment of trough BT3 is equipped with Thus driven roller R7, driven roller R7 fill substrate P towards processing on one side clamping by rotating while substrate P after treatment trough BT3 Set U5 supply.

Although illustration omitted, processing unit U5 is done to what the substrate P come from processing unit U4 carrying was dried Dry device.Processing unit U5 removes the drop or mist adhered in the substrate P for being applied wet processed in processing unit U4, And the moisture content of substrate P is adjusted to defined moisture content.The substrate P dried by processing unit U5 is by several Reason device is carried to processing unit Un.Then, after processing unit Un is handled, substrate P is rolled up to substrate recycling dress Set 4 recycling volume FR2.

The pool of host control device 5 control base board feedway 2, substrate recyclable device 4 and multiple processing unit U1~ Un.5 control base board feedway 2 of host control device and substrate recyclable device 4 are recycled from substrate feeding device 2 to substrate 4 handling substrate P of device.In addition, the carrying of host control device 5 and substrate P synchronously controls multiple processing unit U1~Un, it is right Substrate P carries out various processing.

< exposure device (substrate board treatment) >

Hereinafter, referring to Fig. 2~Fig. 4, to exposure device (the processing substrate dress of the processing unit U3 as first embodiment Set) structure be illustrated.Fig. 2 be show first embodiment exposure device (substrate board treatment) it is integrally-built Figure.Fig. 3 is the figure of the illumination region for showing exposure device shown in Fig. 2 and the configuration of view field.Fig. 4 is to show Fig. 2 institute The figure of the structure of the lamp optical system and projection optical system of the exposure device shown.Hereinafter, processing unit U3 is known as exposing Electro-optical device U3.

Exposure device U3 shown in Fig. 2 is so-called scanning-exposure apparatus, an edge carry direction handling substrate P, one side Will be formed in the mask pattern of the outer peripheral surface of cylindric light shield M as projection exposure is on the surface of substrate P.In addition, in Fig. 2 It is middle using X-direction, Y-direction and the orthogonal orthogonal coordinate system of Z-direction, using orthogonal coordinate system same as Fig. 1.

Firstly, being illustrated to light shield M used in exposure device U3.Light shield M is for example using metal cylinder Reflection-type light shield.Light shield M is formed to have the cylinder of outer peripheral surface (periphery), and has fixed thickness radially Degree, the outer peripheral surface (periphery) have the radius of curvature R m centered on the first axle AX1 extended along Y-direction.The circumference of light shield M Face is the face P1 for being formed with defined mask pattern.The face P1 of light shield M includes the height with high efficiency to prescribed direction the reflected beams Reflecting part and not to prescribed direction the reflected beams or with poor efficiency reflection reflection suppression portion.Mask pattern is by high reflection What portion and reflection suppression portion were formed.Herein, as long as reflection suppression portion reduces the light reflected to prescribed direction.Therefore, Reflection suppression portion can be absorbed light, transmitted light or to the direction reflected light (such as diffusing reflection) other than prescribed direction.This Place can constitute the reflection suppression portion of light shield M using light absorbing material or the material of transmitted light.Exposure device U3 can make Use by metal cylinder production light shield as above structure light shield M.Therefore, exposure device U3 is able to use the light of low price Cover is exposed.

In addition, light shield M could be formed with the entirety or a part of panel pattern corresponding with a display device, Also it could be formed with panel pattern corresponding with multiple display devices.In addition, light shield M can be around first axle AX1's It has been repeatedly formed multiple panel patterns in circumferential direction, can also be repeatedly formed on the direction parallel with first axle AX1 multiple Small-sized panel pattern.Moreover, light shield M also could be formed with panel pattern and size of the first display device etc. and The panel pattern of the different second display part of one display device.In addition, as long as light shield M has centered on first axle AX1 Radius of curvature be Rm periphery, be not limited to the shape of cylinder.For example, light shield M is also possible to circumference The plate of the arc-shaped in face.In addition, light shield M can also be laminal, it can be so that laminal light shield M be bent to copy circle The mode of circumferential surface is pasted on cylindrical member.

Then, exposure device U3 shown in Fig. 2 is illustrated.Exposure device U3 is in above-mentioned driven roller R4~R6, edge On the basis of positioner EPC3 and aligming microscope AM1, AM2, light shield holding mechanism 11, substrate supporting machine are also included Structure 12, lamp optical system IL, projection optical system PL, slave control device 16.Exposure device U3 is by utilizing light optics System IL, projection optical system PL guide the illumination light projected from light supply apparatus 13, by what is kept by light shield holding mechanism 11 The light beam of the pattern of light shield M is projected to the substrate P kept by base supporting mechanism 12.

Slave control device 16 controls each section of exposure device U3, handles each section.Slave control device 16 It can be some or all of the host control device 5 of device inspection apparatus 1.In addition, slave control device 16 can also be with It is controlled by host control device 5, is other devices different from host control device 5.Slave control device 16 is for example with meter Calculation machine.

Light shield holding mechanism 11, which includes, to be kept the light shield holding cylinder (light shield holding member) 21 of light shield M, makes light shield holding cylinder First driving portion 22 of 21 rotations.Light shield holding cylinder 21 keeps light shield in the way of rotation center by the first axle AX1 of light shield M M.First driving portion 22 is connect with slave control device 16, and revolves light shield holding cylinder 21 as rotation center using first axle AX1 Turn.

In addition, light shield holding mechanism 11 keeps the light shield M of cylinder using light shield holding cylinder 21, but it is not limited to the knot Structure.Light shield holding mechanism 11 can also copy the outer peripheral surface of light shield holding cylinder 21 to wind and keep laminal light shield M.Separately Outside, the light shield M of the plate in arc-shaped can also be maintained on the outer peripheral surface of light shield holding cylinder 21 by light shield holding mechanism 11.

The substrate supporting cylinder that base supporting mechanism 12 has the outer peripheral surface supporting substrates P using cylindrical shape and can rotate 25, the second driving portion 26, a pair of air turning-bar ATB1, ATB2 and a pair of of the deflector roll 27,28 for rotating substrate supporting cylinder 25. Substrate supporting cylinder 25 is formed to have the cylindrical shape of outer peripheral surface (periphery), which has in the Y direction Radius of curvature R p centered on second axis AX2 of upper extension.Herein, first axle AX1 and the second axis AX2 is parallel to each other, with from The face that one axis AX1 and the second axis AX2 pass through is center face CL.A part of the periphery of substrate supporting cylinder 25 becomes bearing base The bearing surface P2 of plate P.That is, substrate supporting cylinder 25 is by the way that substrate P to be wound on its bearing surface P2 come supporting substrates P.Second drives Dynamic portion 26 is connect with slave control device 16, rotates substrate supporting cylinder 25 as rotation center using the second axis AX2.

The carry direction that a pair of of air turning-bar ATB1, ATB2 is respectively arranged on substrate P across substrate supporting cylinder 25 it is upper Swim side and downstream side.A pair of of air turning-bar ATB1, ATB2 are set to the surface side of substrate P, and are configured at the vertical direction (side Z To) on the side on the lower the bearing surface P2 than substrate supporting cylinder 25 position.A pair of of deflector roll 27,28 is across a pair of of air turning-bar ATB1, ATB2 and the upstream side and downstream side for being respectively arranged on the carry direction of substrate P.One in a pair of of deflector roll 27,28 is led Roller 27 will be carried the substrate P come from driven roller R4 and be guided to air turning-bar ATB1, another deflector roll deflector roll 28 will turn from air The substrate P come is carried to bar ATB2 to guide to driven roller R5.

Therefore, base supporting mechanism 12 using deflector roll 27 by from driven roller R4 carry come substrate P guide to air and turn to Bar ATB1, and substrate supporting cylinder 25 will be imported by the substrate P of air turning-bar ATB1.Base supporting mechanism 12 is by utilizing the Two driving portions 26 rotate substrate supporting cylinder 25, are directed into substrate branch come the bearing surface P2 bearing on one side using substrate supporting cylinder 25 The substrate P of cylinder 25 is held, carries the substrate P to air turning-bar ATB2 on one side.Base supporting mechanism 12 utilizes air turning-bar ATB2 guides the substrate P for being carried to aerial turning-bar ATB2 to deflector roll 28, and will be guided by the substrate P of deflector roll 28 to driving Roller R5.

At this point, the slave control device 16 connecting with the first driving portion 22 and the second driving portion 26 is by keeping light shield Cylinder 21 and substrate supporting cylinder 25 with defined rotation speed than synchronous rotary, will be formed in the mask pattern of the face P1 of light shield M As continuously repeat projection exposure the substrate P for the bearing surface P2 for being wound in substrate supporting cylinder 25 surface (copy periphery and Curved face) on.

Light supply apparatus 13 projects the illuminating bundle EL1 illuminated to light shield M.Light supply apparatus 13 has light source 31 and leaded light Component 32.Light source 31 is the light source for projecting the light of defined wavelength.Light source 31 is, for example, lamp sources or the laser two such as mercury vapor lamp Pole pipe, light emitting diode (LED) pipe etc..The illumination light that light source 31 projects is, for example, bright line (the g line, h line, i projected from lamp source Line), extreme ultraviolet lights (DUV light), the ArF excimer laser (wavelength 193nm) such as KrF excimer laser (wavelength 248nm) etc..This Place, the preferred illuminating bundle EL1 for projecting the light containing i line (wavelength of 365nm) following wavelength of light source 31.Light source 31 is able to use It is projected from the laser (wavelength of 355nm) of YAG laser (third harmonic laser) injection, from YAG laser (four-time harmonic laser) Laser (wavelength of 266nm) or the laser (wavelength of 248nm) projected from KrF excimer laser etc. are used as i line wave below The illuminating bundle EL1 of long light.

Light conducting member 32 conducts the illuminating bundle EL1 projected from light source 31 to lamp optical system IL.Light conducting member 32 It is constituted by optical fiber or using the relaying mould group etc. of reflecting mirror.In addition, light conducting member 32 is being equipped with multiple lamp optical system IL In the case where, the illuminating bundle EL1 from light source 31 is separated into multi beam, multi beam illuminating bundle EL1 is conducted to multiple illuminations Optical system IL.The illuminating bundle EL1 projected from light source 31 is incident to by light conducting member 32 as the light of defined polarization state Polarising beam splitter PBS.Herein, the polarising beam splitter PBS of present embodiment makes the light of the rectilinearly polarized light as S polarized light Beam reflection, transmits the light beam of the rectilinearly polarized light as P-polarized light.Therefore, light supply apparatus 13 is projected to polarising beam splitter The illuminating bundle EL1 of PBS incidence becomes the illuminating bundle EL1 of the light beam of rectilinearly polarized light (S polarized light).

Light supply apparatus 13 projects wavelength and the consistent polarization laser of phase to polarising beam splitter PBS.For example, light source fills 13 are set in the case where the light beam projected from light source 31 is the light of polarization, polarization-maintaining fiber is used to tie up as light conducting member 32 It holds and carries out leaded light under the polarization state for the laser that light supply apparatus 13 exports.In addition, for example, it is also possible to using fiber guides from light The light beam that source 31 exports makes to generate polarization from the light of optical fiber output using polarizing film.That is light of the light supply apparatus 13 in random polarization In the case that beam is guided, can use polarizing film makes the light beam polarization of random polarization, also can use polarising beam splitter PBS So that the light beam of random polarization is divided into each light beam of P-polarized light and S polarized light, makes the light conduct for transmiting polarising beam splitter PBS The light beam for being incident to the lamp optical system IL an of system comes using making light by polarising beam splitter PBS reflection as entering Be incident upon the lamp optical system IL of other systems light beam come using.In addition light supply apparatus 13 can also be by utilizing lens etc. Relay optical system come guide from light source 31 export light beam.

Herein, as shown in figure 3, the exposure device U3 of first embodiment assumes that the exposure dress of so-called poly-lens mode It sets.In addition, being shown in Fig. 3, the illumination region IR from the light shield M that the light shield holding cylinder 21 that the side-Z is observed is kept Bottom view (left figure of Fig. 3), bowing from the view field PA in the substrate P that the substrate supporting cylinder 25 that the side+Z is observed is supported View (right figure of Fig. 3).The appended drawing reference X of Fig. 3_SMoving direction (the rotation of light shield holding cylinder 21 and substrate supporting cylinder 25 is shown Turn direction).Multiple (be in the first embodiment, for example, 6) illuminations of the exposure device U3 of poly-lens mode on light shield M Region IR1~IR6 irradiates illuminating bundle EL1 respectively, and each illuminating bundle EL1 is reflected in each illumination region IR1~IR6 Multiple (in the first embodiment be, for example, 6) view fields of multiple projected light beam EL2 projection exposures in substrate P PA1~PA6.

Firstly, being illustrated to the multiple illumination region IR1~IR6 illuminated using lamp optical system IL.Such as Fig. 3 institute Show, multiple illumination region IR1~IR6 configure the first lighting area on the light shield M of the upstream side of direction of rotation across median plane CL Domain IR1, third illumination region IR3 and the 5th illumination region IR5 configure second on the light shield M in the downstream side of direction of rotation Illumination region IR2, the 4th illumination region IR4 and the 6th illumination region IR6.Each illumination region IR1~IR6 be in have along The elongated trapezoidal region for the parallel short side and long side that the axial direction (Y-direction) of light shield M extends.At this point, trapezoidal each illumination Region IR1~IR6 is that its short side is located at the side median plane CL and its long side is located at the region in outside.First illumination region IR1, third Illumination region IR3 and the 5th illumination region IR5 is spaced and configures as defined in being separated by the axial direction.In addition, the second illumination region IR2, the 4th illumination region IR4 and the 6th illumination region IR6 are spaced and configure as defined in being separated by the axial direction.At this point, second Illumination region IR2 is configured in the axial direction between the first illumination region IR1 and third illumination region IR3.Similarly, third illuminates Region IR3 is configured in the axial direction between the second illumination region IR2 and the 4th illumination region IR4.4th illumination region IR4 is in axis Configuration is between third illumination region IR3 and the 5th illumination region IR5 upwards.5th illumination region IR5 is configured in the axial direction Between 4th illumination region IR4 and the 6th illumination region IR6.When each illumination region IR1~IR6 is with from the circumferential direction of light shield M Mode (overlapping) configuration that the triangular part in the bevel edge portion of adjacent trapezoidal illumination region is overlapped.In addition, in first embodiment In, each illumination region IR1~IR6 is region of the trapezoidal region but it is also possible to be oblong-shaped.

It is formed with the pattern forming region A3 of mask pattern in addition, light shield M has and does not form the non-pattern of mask pattern Forming region A4.Non- pattern forming region A4 is the not easily reflective region for absorbing illuminating bundle EL1, is configured to surround with frame-shaped Pattern forming region A3.First~the 6th illumination region IR1~IR6 is configured to cover the whole of the Y-direction of pattern forming region A3 A width.

Lamp optical system IL and multiple illumination region IR1~IR6 are correspondingly provided with multiple (examples in the first embodiment 6 in this way).It is injected respectively in multiple lamp optical system (segmentation lamp optical system) IL1~IL6 from light supply apparatus 13 Illuminating bundle EL1.Each lamp optical system IL1~IL6 respectively by from the incident each illuminating bundle EL1 of light supply apparatus 13 conduct to Each illumination region IR1~IR6.That is, the first lamp optical system IL1 conducts illuminating bundle EL1 to the first illumination region IR1, Similarly, the second~the 6th lamp optical system IL2~IL6 conducts illuminating bundle EL1 to the second~the 6th illumination region IR2 ~IR6.Multiple lamp optical system IL1~IL6 across median plane CL, configured with first, third, the 5th illumination region IR1, The side (left side of Fig. 2) of IR3, IR5 configure the first lamp optical system IL1, third lamp optical system IL3 and the 5th photograph Bright optical system IL5.First lamp optical system IL1, third lamp optical system IL3 and the 5th lamp optical system IL5 It is spaced and configures as defined in being separated by the Y direction.In addition, multiple lamp optical system IL1~IL6 are matching across median plane CL The side (right side of Fig. 2) for being equipped with second, the four, the 6th illumination region IR2, IR4, IR6 configures the second lamp optical system IL2, the 4th lamp optical system IL4 and the 6th lamp optical system IL6.Second lamp optical system IL2, the 4th illumination light System IL4 and the 6th lamp optical system IL6 is spaced and configures as defined in being separated by the Y direction.At this point, the second illumination light System IL2 is configured in the axial direction between the first lamp optical system IL1 and third lamp optical system IL3.Similarly, Three lamp optical system IL3, the 4th lamp optical system IL4, the 5th lamp optical system IL5 are configured in the axial direction to be shone second Between bright optical system IL2 and the 4th lamp optical system IL4, third lamp optical system IL3 and the 5th lamp optical system Between IL5, between the 4th lamp optical system IL4 and the 6th lamp optical system IL6.In addition, the first lamp optical system IL1, third lamp optical system IL3 and the 5th lamp optical system IL5 and the second lamp optical system IL2, the 4th illumination Optical system IL4 and the 6th lamp optical system IL6 are configured to when from Y-direction be symmetrical.

Then, referring to Fig. 4, the detailed construction of each lamp optical system IL1~IL6 is illustrated.Further, since each shine Bright optical system IL1~IL6 is same structure, so with the first lamp optical system IL1 (hereinafter simply referred to as light optics System IL) for be illustrated.

In order to irradiate illumination region IR (the first illumination region IR1) with uniform illumination, lamp optical system IL applies Ke (Kohler) illumination is strangled, the illuminating bundle EL1 from light supply apparatus 13 is converted to multiple point light sources and assembled by Kohler illumination method At the area source picture of planar.In addition, lamp optical system IL is to penetrate lighting system using falling for polarising beam splitter PBS.Illumination Optical system IL successively has light optics mould group ILM, polarised light from the incident side of the illuminating bundle EL1 from light supply apparatus 13 Beam splitter PBS and quarter wave plate 41.

As shown in figure 4, light optics mould group ILM from the incident side of illuminating bundle EL1 successively include collimation lens 51, compound eye Lens 52, multiple collector lenses 53, cylindrical lens 54, illuminated field diaphragm 55 and multiple relay lens 56, and be arranged the On one optical axis BX1.Collimation lens 51 is set to the emitting side of the light conducting member 32 of light supply apparatus 13.The optical axis of collimation lens 51 configures In on primary optic axis BX1.The face that collimation lens 51 irradiates the incident side of fly's-eye lens 52 is whole.It is saturating that fly's-eye lens 52 is set to collimation The emitting side of mirror 51.The center configuration in the face of the emitting side of fly's-eye lens 52 is on primary optic axis BX1.Fly's-eye lens 52 will come from The illuminating bundle EL1 of collimation lens 51 is divided into multiple point light sources, and the light from each point light source is made to be overlapped and be incident to aftermentioned Collector lens 53.

At this point, generate point light source picture fly's-eye lens 52 emitting side face by from fly's-eye lens 52 via illumination field of view Diaphragm 55 arrives the various lens of the first concave mirror 72 of aftermentioned projection optical system PL, is configured to anti-with the first concave mirror 72 Pupil plane where penetrating face reaches optical conjugate.Collector lens 53 is set to the emitting side of fly's-eye lens 52, and optical axis is configured at the On one optical axis BX1.Collector lens 53 irradiates the light (illuminating bundle EL1) of each point light source from fly's-eye lens 52, makes illumination light Beam EL1 is overlapped on illuminated field diaphragm 55 via cylindrical lens 54.In the case where no cylindrical lens 54, illumination view is reached The chief ray of the illuminating bundle EL1 of each point on field diaphragm 55 is parallel with primary optic axis BX1.But pass through cylindrical lens 54 Effect so that each chief ray of the illuminating bundle EL1 of irradiation illuminated field diaphragm 55 becomes mutual in Y-direction in Fig. 4 The telecentricity state of (also parallel with primary optic axis BX1) in parallel becomes the gradient root relative to primary optic axis BX1 in XZ plane The non-telecentricity state successively different according to image height position.

Cylindrical lens 54 is incident side in plane and emitting side is in the piano convex cylindrical lens of convex barrel surface, is set as and illuminates The incident side of field stop 55 is mutually adjacent.The optical axis of cylindrical lens 54 is configured on primary optic axis BX1, the injection of cylindrical lens 54 The bus of the convex barrel surface of side is set as parallel with the Y-axis in Fig. 4.Just pass through the illuminating bundle EL1 after cylindrical lens 54 as a result, Each chief ray it is mutually parallel with primary optic axis BX1 in the Y direction, some point in XZ plane on primary optic axis BX1 is (tight Say to lattice, be in the line that in the Y direction extends orthogonal with primary optic axis BX1) convergence.

The opening portion of illuminated field diaphragm 55 is formed as trapezoidal (rectangle) of shape same as illumination region IR, illumination field of view The center configuration of the opening portion of diaphragm 55 is on primary optic axis BX1.At this point, illuminated field diaphragm 55 is utilized from illuminated field diaphragm Relay lens (imaging system) 56, polarising beam splitter PBS, quarter wave plate 41 between 55 to light shield M cylindric face P1 Deng being configured at the face with the illumination region IR optical conjugate on light shield M.Relay lens 56 is set to the injection of illuminated field diaphragm 55 Side.The optical axis of relay lens 56 is configured on primary optic axis BX1.Relay lens 56 is via polarising beam splitter PBS and quarter wave plate 41 will expose to the cylindric face P1 (illumination region of light shield M by the illuminating bundle EL1 of the opening portion of illuminated field diaphragm 55 IR)。

Polarising beam splitter PBS is configured between light optics mould group ILM and median plane CL.Polarising beam splitter PBS exists Division of wave front face reflects the light beam of the rectilinearly polarized light as S polarized light, makes the light of the rectilinearly polarized light as P-polarized light Beam transmission.Herein, the illuminating bundle EL1 of polarising beam splitter PBS is incident to as the light beam of the rectilinearly polarized light of S polarized light, is entered The reflected light (projected light beam EL2) from light shield M for being incident upon polarising beam splitter PBS becomes P-polarized light by quarter wave plate 41 The light beam of rectilinearly polarized light.

Polarising beam splitter PBS makes the illuminating bundle that division of wave front face is incident to from light optics mould group ILM as a result, On the other hand EL1 reflection makes by light shield M reflection and is incident to the projected light beam EL2 transmission in division of wave front face.Polarised light point Beam device PBS preferably makes the whole reflections for the illuminating bundle EL1 for being incident to division of wave front face, but can also make to be incident to wave battle array Most of reflection of the illuminating bundle EL1 of face divisional plane, and so that a part is transmitted or is absorbed using division of wave front face.Equally Ground, polarising beam splitter PBS preferably make the whole transmissions for the projected light beam EL2 for being incident to division of wave front face, but can also be with Make the most of transmission for the projected light beam EL2 for being incident to division of wave front face, and a part is made to reflect or absorb.

Quarter wave plate 41 configures between polarising beam splitter PBS and light shield M, will be by the photograph of polarising beam splitter PBS reflection Mingguang City beam EL1 is converted to circularly polarized light from rectilinearly polarized light (S polarized light).The illuminating bundle EL1 of circularly polarized light is converted to light Cover M irradiation.Quarter wave plate 41 will be converted to rectilinearly polarized light (P polarization by the projected light beam EL2 of the circularly polarized light of light shield M reflection Light).

Herein, lamp optical system IL is so that by the projected light beam EL2's reflected of the illumination region IR on the face P1 of light shield M Chief ray with the mode that is in telecentricity state any one of in XZ plane, irradiates in the Y direction to the illumination region IR of light shield M Illuminating bundle EL1.Illustrate this state referring to Fig. 5.

Fig. 5 is to be greatly exaggerated to show the lighting area exposed on light shield M in XZ plane (plane vertical with first axle AX1) The figure of the state of the projected light beam EL2 of illuminating bundle EL1 and illuminable area the IR reflection of domain IR.As shown in figure 5, above-mentioned illumination Optical system IL is so as to become telecentricity (parallel system) by the chief ray of the illumination region IR of the light shield M projected light beam EL2 reflected Mode, set the chief ray of the illuminating bundle EL1 for the illumination region IR for exposing to light shield M to consciously in XZ plane Non- telecentricity state, is set as telecentricity state in the Y direction.

This characteristic of illuminating bundle EL1 is that cylindrical lens 54 shown in Fig. 4 assigns.Specifically, when setting is from light The circumferential central point Q1 for covering the illumination region IR on the face P1 of M pass through and towards the line of first axle AX1, with the face P1 of light shield M Radius Rm 1/2 circle (Rm/2) intersection point Q2 when, with each chief ray of the illuminating bundle EL1 passed through from illumination region IR in XZ Towards the mode of intersection point Q2 in plane, the curvature of the convex barrel surface of cylindrical lens 54 is set.In this way, anti-in illumination region IR Each chief ray of the projected light beam EL2 penetrated becomes in XZ plane puts down with the straight line passed through from first axle AX1, point Q1, intersection point Q2 The state of row (telecentricity).Certainly, since the curvature of the face P1 of light shield M in the Y direction is considered as infinity, so projected light beam Each chief ray of EL2 also becomes telecentricity state in the Y direction.

Then, to multiple view fields (exposure area) PA1~PA6 for carrying out projection exposure using projection optical system PL It is illustrated.As shown in figure 3, multiple view field PA1~PA6 in substrate P and multiple illumination region IR1 on light shield M~ IR6 is configured accordingly.That is, multiple view field PA1~PA6 in substrate P are across median plane CL, in the upstream of carry direction The first view field PA1, third view field PA3 and the 5th view field PA5 are configured in the substrate P of side, in carry direction Downstream side substrate P on configure the second view field PA2, the 4th view field PA4 and the 6th view field PA6.It is each to throw Shadow zone domain PA1~PA6 is in the elongated trapezoidal of the short side and long side extended with the width direction (Y-direction) along substrate P Region.At this point, trapezoidal each view field PA1~PA6 is that its short side is located at the side median plane CL and its long side is located at outside Region.As defined in first view field PA1, third view field PA3 and the 5th view field PA5 are separated by the direction of the width It is spaced and configures.In addition, the second view field PA2, the 4th view field PA4 and the 6th view field PA6 are in width direction On be separated by as defined in interval and configure.At this point, the second view field PA2 is configured in the axial direction in the first view field PA1 and Between three view field PA3.Similarly, third view field PA3 is configured in the axial direction throws in the second view field PA2 and the 4th Between the PA44 of shadow zone domain.4th view field PA4 is configured in the axial direction in third view field PA3 and the 5th view field PA5 Between.5th view field PA5 is configured in the axial direction between the 4th view field PA4 and the 6th view field PA6.Each projection Region PA1~PA6 is in the same manner as each illumination region IR1~IR6, and when with from the carry direction from substrate P, adjacent is trapezoidal View field PA bevel edge portion triangular part be overlapped mode (overlapping) configure.At this point, view field PA becomes so that in phase The light exposure of the repeat region of the adjacent view field PA shape substantially the same with the light exposure in unduplicated region.And And the first~the 6th view field PA1~PA6 be configured to it is whole in the Y-direction for covering the exposure area A7 exposed in substrate P A width.

Herein, in Fig. 2, when being observed in XZ plane, the illumination region IR1 of the slave odd number on light shield M (and IR3, IR5) central point to even number illumination region IR2 (and IR4, IR6) central point week over long distances be set to: In the view field PA1 (and PA3, PA5) of the slave odd number in the substrate P for the bearing surface P2 for copying substrate supporting cylinder 25 Heart point to even number view field PA2 (and PA4, PA6) central point week over long distances be substantially equal.This is because The projection multiplying power of each projection optical system PL1~PL6 such as is set as at the multiplying powers (× 1).

Projection optical system PL and multiple view field PA1~PA6 are correspondingly provided with multiple (examples in the first embodiment 6 in this way).In multiple projection optical system (segmentation projection optical system) PL1~PL6, injected respectively from multiple illumination regions Multiple projected light beam EL2 of IR1~IR6 reflection.Each projection optical system PL1~PL6 will be by each projected light beam of light shield M reflection EL2 is conducted respectively to each view field PA1~PA6.That is, the first projection optical system PL1 will be from the first illumination region IR1's Projected light beam EL2 is conducted to the first view field PA1, and similarly, the second~the 6th projection optical system PL2~PL6 will come from Each projected light beam EL2 of second~the 6th illumination region IR2~IR6 is conducted to the second~the 6th view field PA2~PA6.It is more A projection optical system PL1~PL6 is being configured with first, third, the 5th view field PA1, PA3, PA5 across median plane CL Side (left side of Fig. 2) configure the first projection optical system PL1, third projection optical system PL3 and the 5th projection optics System PL5.First projection optical system PL1, third projection optical system PL3 and the 5th projection optical system PL5 are in the Y direction On be separated by as defined in interval and configure.In addition, multiple projection optical system PL1~PL6 are across median plane CL, configured with the Two, the side (right side of Fig. 2) of the four, the 6th view field PA2, PA4, PA6 configures the second projection optical system PL2, the 4th Projection optical system PL4 and the 6th projection optical system PL6.Second projection optical system PL2, the 4th projection optical system PL4 and the 6th projection optical system PL6 is spaced and configures as defined in being separated by the Y direction.At this point, the second projection optical system PL2 is configured in the axial direction between the first projection optical system PL1 and third projection optical system system PL3.Similarly, third Projection optical system PL3, the 4th projection optical system PL4, the 5th projection optical system PL5 are configured in the axial direction in the second projection Between optical system PL2 and the 4th projection optical system PL4, third projection optical system PL3 and the 5th projection optical system PL5 Between, between the 4th projection optical system PL4 and the 6th projection optical system PL6.In addition, the first projection optical system PL1, Three projection optical system PL3 and the 5th projection optical system PL5 and the second projection optical system PL2, the 4th projection optics system System PL4 and the 6th projection optical system PL6 is configured to when from Y-direction be symmetrical.

Then, referring to Fig. 4, the detailed structure of each projection optical system PL1~PL6 is illustrated.Further, since each Projection optical system PL1~PL6 is same structure, so with the first projection optical system PL1 (hereinafter simply referred to as projected light System PL) for be illustrated.

Projection optical system PL is by the picture of the mask pattern on the illumination region IR (the first illumination region IR1) on light shield M The view field PA being projected in substrate P.Projection optical system PL from the incident side of the projected light beam EL2 from light shield M successively With above-mentioned quarter wave plate 41, above-mentioned vibration beam splitter PBS and projection optics mould group PLM.

Quarter wave plate 41 and polarising beam splitter PBS can be with lamp optical system IL dual-purposes.In other words, light optics System IL and projection optical system PL shares quarter wave plate 41 and polarising beam splitter PBS.

The projected light beam EL2 of illuminable area IR reflection is being converted to rectilinearly polarized light from circularly polarized light by quarter wave plate 41 After (P-polarized light), transmitted through polarising beam splitter PBS, becomes the imaging beam of telecentricity and be incident to projection optical system PL and (throw Shadow optics module PLM).

Projection optics mould group PLM is correspondingly arranged with light optics mould group ILM.That is, the first projection optical system PL1 The first illumination region IR1 that projection optics mould group PLM will be illuminated by the light optics mould group ILM of the first lamp optical system IL1 The picture of mask pattern be projected in the first view field PA1 in substrate P.Similarly, the second~the 6th projection optical system PL2 The projection optics mould group PLM of~PL6 will be illuminated by the light optics mould group ILM of the second~the 6th lamp optical system IL2~IL6 The picture of mask pattern of the second~the 6th illumination region IR2~IR6 be projected in the second~the 6th view field in substrate P PA2~PA6.

As shown in figure 4, there is projection optics mould group PLM the picture of the mask pattern made on illumination region IR to image in intermediary image The first optical system 61 of face P7 makes at least part reimaging for the intermediary image being imaged by the first optical system 61 in substrate P View field PA the second optical system 62 and be configured at the perspective view diaphragm for being formed with the intermediate image plane P7 of intermediary image 63.In addition, projection optics mould group PLM also has focus amendment optical component 64, as offset optical component 65, multiplying power amendment are used Optical component 66, rotation correction mechanism 67 and polarization adjustment mechanism (polarization adjustment unit) 68.

First optical system 61 and the second optical system 62 are remote obtained from for example making Dai Sen (Dyson) system variant The reflection and refraction optical system of the heart.Optical axis (hereinafter referred to as the second optical axis BX2) and median plane the CL essence of first optical system 61 It is upper orthogonal.First optical system 61 has the first deflecting member 70, the first lens group 71, the first concave mirror 72.First deflection structure Part 70 is the triangular prism with the first reflecting surface P3 and the second reflecting surface P4.First reflecting surface P3 is reflection from polarised light point The projected light beam EL2 of beam device PBS simultaneously makes the projected light beam EL2 of reflection be incident to the first concave mirror by the first lens group 71 72 face.Second reflecting surface P4 be the projected light beam EL2 that makes to be reflected by the first concave mirror 72 it is incident by the first lens group 71, And the face for reflecting incident projected light beam EL2 to perspective view diaphragm 63.First lens group 71 includes various lens, various The optical axis of mirror is configured on the second optical axis BX2.First concave mirror 72 is configured at the multiple point light sources for making to be generated by fly's-eye lens 52 Pass through the pupil plane being imaged from fly's-eye lens 52 via the various lens of the 55 to the first concave mirror of illuminated field diaphragm 72.

Projected light beam EL2 from polarising beam splitter PBS is reflected by the first reflecting surface P3 of the first deflecting member 70, from The field of view of the top half of first lens group 71 is by being incident to the first concave mirror 72.It is incident to the first concave mirror 72 Projected light beam EL2 is reflected by the first concave mirror 72, and passes through incidence from the field of view of the lower half portion of the first lens group 71 To the second reflecting surface P4 of the first deflecting member 70.The projected light beam EL2 of the second reflecting surface P4 is incident to by the second reflecting surface P4 Reflection corrects optical component 64 from focus and as offset optical component 65 is by being incident to perspective view diaphragm 63.

Perspective view diaphragm 63 has the opening of the shape of regulation view field PA.That is, can be according to perspective view diaphragm The shape of 63 opening carrys out the shape of regulation view field PA.Therefore, can will be in lamp optical system IL shown in Fig. 4 The opening shape of illuminated field diaphragm 55 is set as with the shape of view field PA (trapezoidal) in the case where similar shape, can be saved Slightly perspective view diaphragm 63.In addition, the opening shape of illuminated field diaphragm 55 is set as the rectangle comprising view field PA In the case where, need to carry out trapezoidal view field PA defined perspective view diaphragm 63.

Second optical system 62 is structure same as the first optical system 61, across intermediate image plane P7 and the first optical system System 61 is symmetrically arranged.The optical axis (hereinafter referred to as third optical axis BX3) and median plane CL of second optical system 62 are substantially just It hands over, it is parallel with the second optical axis BX2.Second optical system 62 has the second deflecting member 80, the second lens group 81, the second concave mirror 82.Second deflecting member 80 has third reflecting surface P5 and the 4th reflecting surface P6.Third reflecting surface P5 is made from perspective view The projected light beam EL2 of diaphragm 63 reflects and makes the projected light beam EL2 after reflection from the second lens group 81 by being incident to second The face of concave mirror 82.4th reflecting surface P6 is to make to be led to by the projected light beam EL2 that the second concave mirror 82 reflects from the second lens group 81 It crosses and face that is incident and reflecting incident projected light beam EL2 to view field PA.Second lens group 81 includes various lens, The optical axis of various lens is configured on third optical axis BX3.Second concave mirror 82, which is configured at, to be made to be imaged on the first concave mirror 72 Multiple point light source pictures by from the first concave mirror 72 via the various lens of 63 to the second concave mirror 82 of perspective view diaphragm come at The pupil plane of picture.

Projected light beam EL2 from perspective view diaphragm 63 is reflected by the third reflecting surface P5 of the second deflecting member 80, from The field of view of the top half of second lens group 81 is by being incident to the second concave mirror 82.It is incident to the second concave mirror 82 Projected light beam EL2 is reflected by the second concave mirror 82, from the field of view of the lower half portion of the second lens group 81 by being incident to 4th reflecting surface P6 of the second deflecting member 80.The projected light beam EL2 for being incident to the 4th reflecting surface P6 is anti-by the 4th reflecting surface P6 It penetrates, from multiplying power amendment optical component 66 by being projected to view field PA.Mask pattern on illumination region IR as a result, As with etc. multiplying powers (× 1) be projected on view field PA.

Focus corrects the configuration of optical component 64 between the first deflecting member 70 and perspective view diaphragm 63.Focus corrects light The adjustment of component 64 is learned to project to the focus state of the picture of the mask pattern in substrate P.It is for example to make that focus, which corrects optical component 64, The wedge-shaped prism of two panels is reversed (reversed in the X direction in Fig. 4) and is overlapped made of integral transparent parallel flat.Pass through Slide a pair of prism in the state of not changing the interval between face relative to each other along bevel direction, so that as parallel The variable thickness of plate.The effective optical path length of the first optical system 61 is finely adjusted as a result, and to being formed in intermediary image The focus state of the picture of the mask pattern of face P7 and view field PA is finely adjusted.

As offset optical component 65 configures between the first deflecting member 70 and perspective view diaphragm 63.As offset is used up Component 65 is learned to be adjusted in a manner of capableing of the picture of mask pattern on micro mobile projector to substrate P in image planes.As partially Diverting from one use to another optical component 65 can be inclined in the face YZ by XZ the plane tiltable transparent parallel plate glass and Fig. 4 of Fig. 4 Oblique transparent parallel plate glass is constituted.By adjusting this respective tilt quantity of two panels parallel plate glass, can make to be formed In the picture micro offset in the x direction or the y direction of the mask pattern of intermediate image plane P7 and view field PA.

Multiplying power amendment is configured between the second deflecting member 80 and substrate P with optical component 66.Multiplying power amendment optics structure Part 66 is for example configured to, and concavees lens, convex lens, concavees lens this 3 are configured at coaxially at predetermined intervals, fix the recessed of front and back Mirror moves intermediate convex lens on optical axis (chief ray) direction.It is formed in the picture of the mask pattern of view field PA as a result, The image formation state of telecentricity is maintained on one side, it is isotropically micro on one side to zoom in or out.In addition, constituting multiplying power amendment uses optics The optical axis of 3 lens groups of component 66 is tilted in XZ plane in the mode parallel with the chief ray of projected light beam EL2.

Rotate correction mechanism 67 for example using executing agency (illustration omitted), make the first deflecting member 70 around with the second optical axis BX2 vertical and parallel with Z axis axis carries out micro rotation.The rotation correction mechanism 67 by make the first deflecting member 70 rotate, It can make the picture micro rotation in intermediate image plane P7 for the mask pattern for being formed in intermediate image plane P7.

Adjustment mechanism 68 is polarized for example using executing agency (illustration omitted), makes quarter wave plate 41 around the axis orthogonal with plate face Rotation is to adjust polarization direction.Polarization adjustment mechanism 68 can be thrown view field PA is projected to by rotating quarter wave plate 41 The illumination of shadow light beam EL2 is micro-adjusted.

In the projection optical system PL constituted in this way, each chief ray of the projected light beam EL2 from light shield M with The state of telecentricity is projected from the face P1 of the light shield M in illumination region IR, and passes through quarter wave plate 41 and polarising beam splitter PBS And it is incident to the first optical system 61.The projected light beam EL2 of the first optical system 61 is incident to by the of the first optical system 61 The first reflecting surface (plane mirror) P3 of one deflecting member 70 reflects, and passes through from the first lens group 71 by the first concave mirror 72 instead It penetrates.The projected light beam EL2 reflected by the first concave mirror 72 passes through from the first lens group 71 by the first deflecting member 70 again Second reflecting surface (plane mirror) P4 reflection, and transmit overfocus amendment optical component 64 and enter as offset optical component 65 It is incident upon perspective view diaphragm 63.The projected light beam EL2 passed through from perspective view diaphragm 63 is inclined by the second of the second optical system 62 Third reflecting surface (plane mirror) the P5 reflection for turning component 80, from the second lens group 81 by being reflected by the second concave mirror 82.Quilt The projected light beam EL2 of second concave mirror 82 reflection passes through from the second lens group 81 anti-by the 4th of the second deflecting member 80 the again Face (plane mirror) P6 reflection is penetrated, multiplying power amendment optical component 66 is incident to.The throwing projected from multiplying power amendment with optical component 66 Shadow light beam EL2 is incident to the view field PA in substrate P, will become apparent from the mask pattern in illumination region IR picture with etc. multiplying powers (× 1) is projected on view field PA.

The projection image planes of the pattern of < light shield and the exposure relation of plane > of substrate

Hereinafter, referring to Fig. 6 A and Fig. 6 B to the projection image planes of the pattern of the light shield of the exposure device U3 of first embodiment It is illustrated with the exposure relation of plane of substrate.Fig. 6 A is the pass of the projection image planes for showing the pattern of light shield and the plane of exposure of substrate The explanatory diagram of system.Fig. 6 B is the variation for roughly showing the focal position (defocus amount) for the pattern image being projected in view field Explanatory diagram.

Projected light beam EL2 is imaged by projection optical system PL in exposure device U3, and the throwing of the pattern of light shield M is consequently formed Image plane Sm.Projection image planes Sm is the position that the pattern of light shield M is imaged, and is the position as optimum focusing.Herein, light shield M It is configured with radius of curvature as described above for the curved surface (being curve in ZX plane) of Rm.Projection image planes Sm also becomes curvature as a result, Radius is the curved surface of Rm.In addition, exposure device U3 is using the surface of substrate P as plane of exposure Sp.Herein, plane of exposure Sp refers to substrate The surface of P.Substrate P is held in the substrate supporting cylinder 25 of cylindrical shape as described above.Plane of exposure Sp is as radius of curvature as a result, The curved surface (being curve in ZX plane) of Rp.In addition, the side orthogonal with scan exposure direction of projection image planes Sm and plane of exposure Sp To the axis for being curved surface.

Therefore, projection image planes Sm and plane of exposure Sp is relative to scan exposure direction (substrate supporting cylinder 25 as shown in Figure 6A Outer peripheral surface circumferential direction) curved face.Therefore, projection image planes Sm is bent with following face alternate position spike, that is, in view field In the chief ray of projected light beam EL2 between the end positions and center of exposed width A on the scan exposure direction of PA The face alternate position spike for being up to Δ Fm on direction, plane of exposure Sp are bent with following face alternate position spike, that is, in view field PA Scan exposure direction on exposed width A end positions and center between projected light beam EL2 chief ray side The upward face alternate position spike for being up to Δ Fp.Herein, as shown in Figure 6A, exposure device U3 is to carry out practical exposure to projection image planes Sm Plane of exposure Sp (surface of substrate P) where light time becomes the mode of actual exposure face Spa, by the first axle AX1 and base of light shield M Second axis AX2 of plate bearing cylinder 25 is pivotally supported in exposure device main body.

Actual exposure face Spa intersects at two different positions FC1, FC2 with projection image planes Sm on scan exposure direction. In addition, exposure device U3 is adjusted by the position of each optical component to projection optical system PL, or protected using light shield The one party in mechanism 11 and base supporting mechanism 12 is held the interval of light shield M and substrate P to be micro-adjusted or focus point Amendment optical component 64 is adjusted, and can change actual exposure face Spa (focusing in normal direction relative to projection image planes Sm Adjustment direction) on position.

Projection image planes Sm and actual exposure face Spa are set as the exposed width on the scan exposure direction of view field PA In A, different two positions FC1, FC2 are intersected at respectively.Therefore, the position FC1 in exposed width A and position FC2 difference By the pattern image of light shield M with best focus projection exposure in the surface of substrate P.In addition, the position in exposed width A In region between FC1 and position FC2, become optimum focusing face (projection image planes Sm) and the actual exposure of the pattern image being projected Face Spa compares the rear focus state that is located behind, the region in the outside between position FC1 and position FC2, becomes and is projected The optimum focusing face (projection image planes Sm) of pattern image is located at the prefocusing state in front compared with the Spa of actual exposure face.

That is, on the surface of substrate P along actual exposure face Spa from an end As of exposed width A towards another end In the case where portion Ae, the pattern image in substrate P is exposed in the position for exposing end As when starting with defined defocus amount, Hereafter, defocus amount is reduced with time going by, and in position, FC1 is exposed with optimum focusing (defocus amount zero) state.If By the best focus of position FC1, then defocus amount reversely increases, and becomes maximum in the center FC3 of exposed width A Defocus amount.The center FC3 of exposed width A is as inflection point, and hereafter defocus amount is reduced, and in position, FC2 is again with optimum focusing Pattern image is exposed in substrate P by state.If defocus amount increases again, pattern image by the best focus of position FC2 Another end Ae that is exposed on terminate.In this way, region and position FC1 between position FC1 and position FC2 and position FC2 it Between the symbol that defocuses of the direction defocused in region in outside be different.

As described above, being moved to defined peripheral speed from the end As of the exposed width A of view field PA in substrate P In a period of the Ae of end, as shown in Figure 6B, each point into the pattern image in substrate P is projected under prefocusing state (position As) Start to be exposed, on one side according to best focus (position FC1), rear focus state (position FC3), best focus (position Set FC2), the sequence of prefocusing state (position Ae) continuously change, be exposed in substrate P on one side.It is poly- on the longitudinal axis of Fig. 6 B Burnt position (or defocus amount) is zero to refer to, projects the difference (Sm-Spa) of the position of image planes Sm and the position of actual exposure face Spa The best focus become zero.In addition, the horizontal axis of Fig. 6 B indicates the linear position of exposed width A, but it is also possible to Position in the circumferential direction of the outer peripheral surface of substrate supporting cylinder 25.

Defocus amount under the prefocusing state (positive direction) of end As, Ae of exposed width A, center FC3's Afterwards the defocus amount under focus state (negative direction) according to the imaging performance (resolution ratio, the depth of focus) of projection optical system PL, throw The exposed width A of shadow zone domain PA, the minimum dimension for the mask pattern that should be projected, light shield M face P1 (projection image planes Sm) curvature Radius Rm, substrate supporting cylinder 25 outer peripheral surface (the plane of exposure Spa in substrate P) radius of curvature R p and determine model appropriate It encloses.Specific numerical example is explained below, like this, by continuously changing during the scan exposure of entire exposed width A Become focus state, in mask pattern, particularly individual filament or discrete contact hole (pillar through hole) can be amplified Etc. the depth of focus that seems of isolated patterns.

In addition, in the present embodiment, it, can be right by the way that the surface of the face P1 of light shield M and substrate P are set as cylindrical shape Mask pattern is projected on the projection image planes and the plane of exposure for the substrate being exposed on scan exposure direction that substrate P side obtains It is poor to assign cylindrical shape.Therefore, exposure device U3 only passes through the rotary motion of light shield M and substrate supporting cylinder 25, it will be able to according to The position on scan exposure direction in view field PA continuously changes focus state, moreover, can prevent relative to reality The image contrast of focusing in matter changes.In addition, in the present embodiment, due to make in view field PA in scan exposure Two positions on direction set exposed width A as the mode of optimum focusing, so can reduce in exposed width A Average defocus amount, and increase exposed width A.Thereby, it is possible to reduce projected light beam EL2 illumination in the case where, alternatively, In the case where accelerating the scanning speed of the light shield M on scan exposure direction or substrate P, it is ensured that suitable light exposure, as a result, Substrate can be handled with high efficiency.In addition, since average defocus amount can be reduced relative to exposed width, so also It is able to maintain that quality.

In the present embodiment, focal position difference is made according to the coordinate position (perimeter locations) of exposed width A to carry out Exposure, as a result, by with different focus states on entire exposed width A be projected on the pattern image in substrate P carry out it is tired As becoming the final picture intensity distribution being formed on the plane of exposure of substrate P obtained from meter.Herein, to be accumulated by picture into Row explanation, to simplify the explanation, firstly, using point as intensity distribution illustrates its concept.Generally, it puts as intensity distribution is right with it There is correlativity than degree.Only have the point of the position of defocus amount z as intensity distribution I on optical axis direction (focus variations direction) (z) such as following formula.Herein, λ is set by the wavelength of illuminating bundle EL1, by the numerical aperture of the substrate-side of projection optical system PL It is set as NA, I will be set as in the intensity distribution of ideal best focus position_o,

As Δ Dz=(pi/2/λ) × NA²When × z,

It puts as intensity distribution I (z) is

I (z)=[Sin (Δ Dz)/(Δ Dz)]²×I_o。

When using this point as intensity distribution I (z), it is (or average that corresponding with exposed width A aggregate-value can be found out Value), moreover, the defocus amount in actual center (the center FC3 in Fig. 6 A) can be taken on transverse axis, as emulation And find out the intensity distribution of each defocus amount.Accordingly, focus state (projection image planes Sm and actual exposure are adjusted by exposure device U3 The positional relationship of face Spa), the intensity distribution (image contrast) of the pattern image obtained in exposure can be adjusted to optimal shape State.

In addition, in general, the resolution ratio R of projection optical system PL and depth of focus DOF are expressed from the next.

R=k1 λ/NA (0 k1≤1 <)

DOF=k2 λ/NA²(0 k2≤1 <)

Herein, k1, k2 be can because conditions of exposure, photosensitive material (photoresist etc.) or exposure after development treatment Or film process and the factor that changes, the k1 factor of resolution ratio R is in the range of general 0.4≤k1≤0.8, the depth of focus The k2 factor of DOF can probably be expressed as k2 ≈ 1.

The definition of depth of focus DOF based on this projection optical system PL, in the present embodiment, preferably adjustment in advance Approximatively to meet relational expression below.

[mathematical expression 1]

DOF/2 < (Δ Rm+ Δ Rp)≤3DOF

Herein, surface (the actual exposure face of radius of curvature R m, substrate P based on projection image planes Sm (the face P1 of light shield M) Spa radius of curvature R p and exposed width A), find out Δ Rm, Δ Rp with following formula respectively.

[mathematical expression 2]

[mathematical expression 3]

According to the formula it is found that Δ Rm and Δ Rp are illustrated respectively in Δ Fm, Δ Fp shown in Fig. 6 A.In addition, above-mentioned Relational expression 1 preferably further meets DOF < (Δ Rm+ Δ Rp).It is above-mentioned to meet in the exposure device U3 of present embodiment The mode of relational expression 1 determines exposed width A, radius of curvature R m, Rp, by meeting above-mentioned relational expression 1, can either maintain shape At the quality (Line-width precision, position precision, registration accuracy etc.) of the various patterns in the display panel in substrate P, and can Improve productivity.It is described in detail for this point using second embodiment.

In addition, in the present embodiment, when by the variation range of the defocus amount in exposed width A, that is, will be shown in Fig. 6 B In the defocus amount in the positive direction at end As, Ae and the defocus amount in the negative direction at the center FC3 of exposed width A Difference when being set as Δ DA, according to the relationship between the depth of focus DOF of projection optical system PL, be preferably set to satisfaction 0.5 The relationship of≤(Δ DA/DOF)≤3 is more preferably set as satisfaction 1≤(Δ DA/DOF).By the way that exposure device U3 is set as full The foot relationship can either maintain quality (Line-width precision, position essence of the various patterns for the display panel being formed in substrate P Degree, registration accuracy etc.), and can be improved productivity.It is also described in detail using second embodiment for this point.

In addition, exposure device U3 is preferably set to, and as Fig. 6 B of present embodiment, the projection image of the pattern of light shield M Difference of the face Sm and actual exposure face Spa of substrate P on scan exposure direction is with the centre bit of the exposed width A of view field PA Setting FC3 is that axis is changed in a manner of line symmetrical (being bilateral symmetry in fig. 6b).

In addition, in the present embodiment, as shown in Figure 6B, can be carried out to following two by the value that cumulative calculation obtains Compare, the positional relationship of projection image planes Sm and actual exposure face Spa is set in the mode for keeping the two roughly equal, this two by tiring out The value being calculated refers to, until the end As to position FC1 being positive in the exposed width A of view field PA from defocus amount Section and section until position FC2 to end Ae in the defocus amount of positive direction is accumulated by value (absolute value), With the defocus amount of negative direction is accumulated by the section until the position FC1 to position FC2 that defocus amount is negative value (absolutely Value).

Multiple projection optics mould group PLM are at least configured two on scan exposure direction by the exposure device U3 of present embodiment Column, in the Y-direction orthogonal with scan exposure direction, make the end (three of the view field PA of adjacent projection optics mould group PLM Angled portion) it overlaps each other, so that the pattern of light shield M continuous exposure in the Y direction.Inhibit as a result, because adjacent in the Y direction The contrast or light exposure of the pattern image at continual-connecting-part (overlapping region) between Liang Ge view field PA are different and generate band The deviation of shape.In the present embodiment, on this basis, with the view field on actual exposure face Spa (surface of substrate P) The mode that best focus position is formed at two (position FC1, FC2) on scan exposure direction in PA sets projection image planes Sm Therefore it can reduce because projecting image planes Sm and actual exposure face in scan exposure with the positional relationship of actual exposure face Spa The dynamic that the positional relationship of Spa slightly changes defocuses and the variation of image contrast that generates.Thus, it is also possible to reduce adjacent The difference for the image contrast that overlapping region between view field PA generates, so as to manufacture the unconspicuous high-quality of continual-connecting-part Flexible display panels.

As in this embodiment, each view field PA of multiple projection optics mould group PLM is being arranged in and is scanning exposure When in the orthogonal Y-direction of light direction (X-direction), to substrate in the entire width on the scan exposure direction of each view field PA Illumination (intensity of exposure light) on P carries out aggregate-value obtained from adding up preferably in the Y side orthogonal with scan exposure direction To any position on all constants.In addition, some coincidence of the end of adjacent Liang Ge view field PA in the Y direction Part (overlapping region of triangle), be also set to the aggregate-value and another delta-shaped region in a delta-shaped region Adding up to for aggregate-value is identical as the aggregate-value of not overlapping region.Thereby, it is possible to inhibit light exposure orthogonal with scan exposure direction Direction on change.

In addition, exposure device U3 will be by that will project image planes Sm and plane of exposure Sp (actual exposure face Spa) is set as cylinder Face, even if configuring multiple (configuration odd number and even number two arrange) projected lights on scan exposure direction as in this embodiment Mould group PLM is learned, due to projecting the pass of image planes Sm and plane of exposure Sp (actual exposure face Spa) in each projection optics mould group PLM It is all the same, so still being able to adjust their relationship together.As the projection aligner of common poly-lens mode, In the case that projection image planes and plane of exposure are plane, for example, in the view field of the projection optics mould group of odd number, if The increase depth of focus and make plane of exposure (surfaces of planar substrates) relative to projection image planes inclination, then in the projected light of even number Be difficult to allow biggish can be generated in the view field of mould group by, which learning, defocuses.On the other hand, as in this embodiment, pass through Barrel surface is set by projection image planes Sm and plane of exposure Sp (actual exposure face Spa), two be arranged on scan exposure direction Focusing adjustment of the column projection optics mould group PLM in each view field PA can pass through the of the rotation center of cylindric light shield M The interval in z-direction second axis AX2 of the rotation center of one axis AX1 and substrate supporting cylinder 25 or each projection optics mould Multiplying power in group PLM is corrected with the adjustment of optical component 66 and simple realization.Thereby, it is possible to be pressed down using simple apparatus structure It makes relative to the image contrast variation defocused.Since the variation of image contrast can either be inhibited, and it is capable of increasing scan exposure area The exposed width in domain, so production efficiency can also be improved.

[second embodiment]

Hereinafter, being illustrated referring to exposure device U3a of the Fig. 7 to second embodiment.In addition, in order to avoid duplicate note It carries, is illustrated only for the part being different from the first embodiment, for component part same as first embodiment, mark Remember that appended drawing reference same as the first embodiment is illustrated.Fig. 7 is to show the exposure device of second embodiment (at substrate Manage device) integrally-built figure.The exposure device U3 of first embodiment is protected using cylindric substrate supporting cylinder 25 The structure from the view field PA substrate P passed through is held, but the exposure device U3a of second embodiment is to be by substrate P bearing Structure that is planar and being held in moveable base supporting mechanism 12a.

In the exposure device U3a of second embodiment, base supporting mechanism 12a is planar with substrate P is remained Substrate objective table 102 and make substrate objective table 102 scanning be mobile along the X direction in the face orthogonal with median plane CL Mobile device (illustration omitted).Therefore, substrate P in addition to fine sheet flexible it is (resin films such as PET, PEN, very thin curved Glass sheet, thin metal sheet metal etc.) other than, it is also possible to almost individual unbending glass substrate.

Since the bearing surface P2 of the substrate P of Fig. 7 is plane (radius of curvature ∞) substantially parallel with the face XY, thus by from Light shield M reflection is simultaneously put down from each projection optics mould group PLM by the chief ray and XY for the projected light beam EL2 being incident upon in substrate P Face is vertical.

In addition, in this second embodiment also in the same manner as Fig. 2 of front, when being observed in XZ plane, from cylindrical shape Light shield M on illumination region IR1 (and IR3, IR5) central point to illumination region IR2 (and IR4, IR6) central point Until perimeter be set as, with the central point from the view field PA1 (and PA3, PA5) in the substrate P for copying bearing surface P2 The linear distance in X-direction until the central point of the second view field PA2 (and PA4, PA6) is substantially equal.

It is also the mobile device of 16 control base board supporting device 12a of slave control device in the exposure device U3a of Fig. 7 (line motor of scan exposure or the executing agency of fine motion etc.), the rotation with light shield holding cylinder 21 synchronously drives base Plate objective table 102.

Hereinafter, referring to Fig. 8 to the projection image planes of the mask pattern in the exposure device U3a of second embodiment and substrate Exposure relation of plane is illustrated.Fig. 8 is the explanatory diagram of the exposure relation of plane of the projection image planes for showing mask pattern and substrate.

Exposure device U3a is by the way that projected light beam EL2 is imaged by projection optical system PL, to form the pattern of light shield M Project image planes Sm1.Projection image planes Sm1 is the face that the cylindric mask pattern face of light shield M is imaged under best focus, is in Barrel surface.Herein, since the curved surface that the illumination region IR on light shield M is radius of curvature R m1 as described above (is round in XZ plane Arc) a part, so projection image planes Sm1 be also radius of curvature R m1 curved surface (being circular arc in XZ plane) a part.Separately Outside, projection has the planar surface of the substrate P of the picture of mask pattern to become plane of exposure Sp1 (radius of curvature ∞).Therefore, as schemed Shown in 8, the projection image planes Sm1 of the view field PA of the projection image planes Sm1 (left side) and even number of the view field PA of odd number (right side) bends to cylindrical shape in scan exposure direction (X-direction), in the same manner as shown in Fig. 6 A of front, in projected area In exposed width A on the scan exposure direction of domain PA, have as the focal position at both ends and at the center of exposed width A Face alternate position spike (focus variations width) Δ Fm of the difference of focal position.Herein, when scan exposure, so that the surface of substrate P is matched It is placed in actual exposure face Spa1.Since plane of exposure Sp1 and actual exposure face Spa1 are planes, so sweeping in view field PA It retouches in the exposed width A in exposure directions, the variable quantity of the surface location of Z-direction is 0.Actual exposure face Spa1 is set as and throws Image plane Sm1 intersects at different two position FC1, the FC2 separated on scan exposure direction.That is, exposure device U3a passes through Multiplying power amendment optical component 66 etc. in projection optical system PL is adjusted, or makes light shield holding mechanism 11 (first Axis AX1) and substrate objective table 102 in one party fine motion in z-direction, image planes Sm1 and actual exposure face will be projected The relative positional relationship of Spa1 is set as defined state.

Two positions FC1, FC2 are the light shield come in the position with best focus in exposure projections image planes Sm1 respectively The position of pattern image.

It as a result, in the present embodiment, also can be in scan exposure direction by the rotary motion of cylindric light shield M Exposed width A in carry out the scan exposure for changing focus state continuously within the limits prescribed, moreover, being able to suppress phase Image contrast variation for actual focus variations.Like this, even if plane of exposure Sp1 (actual exposure face Spa1) is flat Face is set as the curved cylinder planar on scan exposure direction by that will project image planes Sm1, does not have to tilted substrates P still, it will be able to It obtains seeming to increase the effect of the depth of focus for the mask pattern picture being exposed in substrate P, and is able to suppress image contrast Variation.This function and effect by the pattern image projection exposure from common plane light shield in being supported to cylinder planar It can similarly be obtained in the case where the surface (plane of exposure) of substrate.

In addition, in this case, since face alternate position spike shown in Fig. 8 (focus variations width) Δ Fm is with before The Δ Rm of the formula 2 in face is identical, so being found out by following formula.

[mathematical expression 4]

Therefore, it if based on the formula 2, attempts to carry out projection state or imaging characteristic of the exposure device U3a of Fig. 7 etc. Various emulation can then obtain the result such as Fig. 9~Figure 17.

In addition, the radius Rm of the face P1 (projection image planes Sm1) of cylindric light shield M is set as when carrying out the emulation 250mm (diameterIt is 500mm), the wavelength X of the illuminating bundle EL1 of exposure is set as i line (365nm), by projection optics system System PL be set as numerical aperture NA be 0.0875 etc. multiplying powers preferred view system, by (the actual exposure face plane of exposure Sp1 Spa1) it is set as the plane that radius of curvature is ∞.If setting 1.0 for the k2 factor for the depth of focus DOF for depending on technique, this The depth of focus DOF of kind projection optical system PL passes through λ/NA²And obtain width be approximately 48 μm (substantially relative to optimum focusing face ± 24 μm of range).In addition, for convenience, it is 40 μm that depth of focus DOF, which is also set as width, sometimes in emulation below (relative to substantially ± 20 μm of the range in optimum focusing face).

Next, Fig. 9 shows defocus properties Cm of this projection optical system PL in exposed width A, horizontal axis indicate with The center of exposed width A is the coordinate of the X-direction of origin, and the longitudinal axis is indicated using best focus position as the throwing of origin (zero point) The defocus amount of image plane Sm1.The chart of the Fig. 9, which also depicts, to be set as 20mm for exposed width A in formula 2 in front and makes this Face alternate position spike Δ Rm obtained from the coordinate position of width A changes between -10mm~+10mm.As the diagram of Fig. 9, because The face P1 (projection image planes Sm1) of light shield M is bent into cylinder planar on scan exposure direction and makes defocusing in exposed width A Characteristic Cm changes in arc-shaped.

Figure 10 be in defocus properties Cm shown in Fig. 9, put as intensity relative to depth of focus DOF change width such as How the chart that is emulated is changed, and horizontal axis indicates error, the projected light of the face precision on the surface or mask pattern face because of substrate P Aberration in image planes direction of system PL etc. and in issuable focus direction fuzzy quantity (surface of substrate P relative to dissipate The offset in a focus direction of burnt characteristic Cm), the longitudinal axis indicates point as the value of intensity.Defocus properties in Figure 10, in Fig. 9 Under the premise of Cm, will in the case where depth of focus DOF is 0 × DOF calculated point as in intensity distribution in exposed width A The point at center (origin) be standardized as intensity is set as 1.0.Figure 11 is to change in exposed width A in arc-shaped The chart that one example of the relationship of the variable quantity and intensity difference (Strength Changes amount) of the defocus properties Cm of Fig. 9 is emulated. Figure 12 be in the optimum focusing set for device with it is when being set as 24 μm by defocusing of being generated by device, in exposed width Change in A in the contrast of the defocus properties Cm and line of arc-shaped variation and interval (L/S, L&S:line and space) pattern Between relationship the chart that is emulated of an example.Figure 13 is similarly to change in exposed width A in arc-shaped Defocus properties Cm and L/S pattern contrast ratio variation the chart of another example that is emulated of relationship.Figure 14 It is to the CD value (critical dimension) for being in defocus properties Cm and L/S pattern that arc-shaped changes and to cut position in exposed width A The chart for the example that quasi- relationship is emulated.Figure 15 is to defocus spy in arc-shaped variation in exposed width A Property Cm and isolated line (ISO pattern) the chart of an example that is emulated of the relationship that changes of contrast.Figure 16 be to Emulation has been carried out in the relationship of the variation of the contrast ratio of the defocus properties Cm and isolated line of arc-shaped variation in exposed width A The chart of another example.Figure 17 is the CD value to A changes in arc-shaped in exposed width defocus properties Cm and isolated line And cut the chart for the example that the relationship of level is emulated.

Firstly, under the above conditions, as shown in Figure 10, finding out will be in defocusing for arc-shaped variation in exposed width A The point relative to defocus amount that characteristic Cm is generated in the case where being distributed as unit of depth of focus DOF is as intensity distribution I (z). Point is found out as intensity distribution using previously described expression formula.

I (z)=[Sin (Δ Dz)/(Δ Dz)]²×I_o,

Δ Dz=(pi/2/λ) × NA²×z

Then, it is assumed that various values are taken for the defocus width in exposed width A being in arc-shaped variation, such as take 0,1 × The case where DOF, 2DOF, 3 × DOF, 4 × DOF, calculate by by defocus amount be averaged be set as optimum focusing in a manner of adjust base Point in the case where plate is as intensity distribution.In addition, taking various values in the defocus width of arc-shaped variation in exposed width A The case where, on the basis of the defocus amount and its slit width, the point picture calculated in the case where defocusing it from the position is strong Degree distribution.Like this, it summarizes when each exposed width A uniquely determined using calculated exposed width A is interior in circular arc The point when defocus width of shape variation is as intensity distribution and the relationship defocused.Specifically, it is directed to respectively in exposure device U3a The defocus width changed in exposed width in arc-shaped take 0,0.5 × DOF, 1 × DOF, 1.5 × DOF, 2 × DOF, 2.5 × The case where DOF, 3 × DOF, 3.5 × DOF, 4 × DOF, calculates focusing error that point assumes as intensity distribution and upon exposure, scattered Burnt relationship.

Then, it is assumed that various values are taken for the defocus properties Cm in exposed width A being in arc-shaped variation, such as take 0 × The case where DOF, 1 × DOF, 2 × DOF, 3 × DOF, 4 × DOF, calculates being averaged for defocus amount is set as the side of optimum focusing Formula adjusts the point in the case where substrate P as intensity distribution.In addition, for the defocusing in arc-shaped variation in exposed width A The case where characteristic Cm takes various values calculates the feelings for defocusing it from the position on the basis of the defocus amount and its slit width Point under condition is as intensity distribution.Like this, it summarizes and works as respectively to be defocused using what calculated exposed width A uniquely determined Point when characteristic Cm is as intensity distribution and the relationship defocused.Specifically, being directed to respectively will be emulated as exposure device U3a On the basis of the defocus properties Cm as shown in Figure 9 that sets take 0 × DOF, 0.5 × DOF, 1 × DOF, 1.5 × DOF, 2 × DOF, The case where 2.5 × DOF, 3 × DOF, 3.5 × DOF, 4 × DOF, calculates the focusing that point assumes as intensity distribution and upon exposure and misses The relationship of poor (offset of the positional relationship that should be set on the surface relative to set projection image planes Sm1 and substrate P).This It is equivalent to the chart of Figure 10.

In Figure 10, horizontal axis is set as defocus amount [μm], the longitudinal axis is set as standardized point as intensity value.Further, since It is the rotary motion for projecting image planes Sm1 that exposure device U3a, which carries out cylindric mask pattern face, and projected light beam EL2 is projected to In substrate P, so 2 variations occur for the focusing error imagined in exposure.Therefore, the shape of the point picture of the positive side and negative side that defocus State is somewhat different.In the present embodiment, by defocus position for+40 μm as intensity and the position for being -40 μm picture intensity Position as symmetrical intensity is as optimum focusing.As shown in the chart of Figure 10, as the amplitude based on rotation becomes larger, that is, With becoming larger in exposure area internal defocusing width along defocus properties Cm as shown in Figure 9, the point in optimum focusing is as intensity It reduces, the point when defocusing also reduces as the variation of intensity.

Hereinafter, calculating for the various situations for changing the defocus properties Cm in exposed width A in arc-shaped variation Point calculates point as the difference of the maxima and minima of intensity, further, calculates in exposed width A internal defocusing as Strength Changes Characteristic Cm differs only by difference of the point as Strength Changes of two points of 0.5DOF.The calculated result is shown in FIG. 11.Figure 11's is vertical Axis indicates two points as the difference component of Strength Changes, and horizontal axis indicates to require guards escorting prisoners when making defocus properties Cm every 0.5DOF variation The object of component.That is, on the horizontal axis of Figure 11, such as leftmost point is as intensity difference (about 0.02) is to change defocus properties Cm Difference when 0 × DOF and when 0.5 × DOF of variation.According to the simulation result of the Figure 11, point works as defocus properties as the difference of Strength Changes When Cm is transformed into the state for having changed the amount of 1 × DOF from the state for the amount for having changed 0.5 × DOF, and work as defocus properties Cm from change When the state for having changed the amount of 2.5 × DOF is transformed into the state for having changed the amount of 3 × DOF, integrally differ greatly.That is, 0.5 × In the range of DOF~3 × DOF, relative to the variation of defocus amount, point is preferable as the Strength Changes slow effect that flattens.Therefore, along It is preferable that the defocus amount of defocus properties Cm is set as effect when 0.5 times~3 times of the amplitude of depth of focus DOF.

In addition, in chart shown in Fig. 10, photoresist applied with defined thickness on the surface to substrate P to make In the case where for photosensitive layer, the point formed on the photoresist as picture is as the value of intensity is according to used resist Deng and it is different, but according to experiment in the case where the k1 factor of resolution ratio is 0.5 or so, main points are generally 0.6 as intensity More than, it will be able to form picture.

Herein, if the desired focusing error of exposure device to be set as to definition λ/NA of depth of focus DOF²Until Defocus width (is set as ± 24 μm) in the present embodiment, then by by the amplitude defocused the i.e. defocus width in exposure area It is set as 2.5 × DOF, the variation as intensity can be made to reduce, to form the picture of mask pattern well.

Hereinafter, carrying out various operations for the case where the mask pattern for being used to project is set as L/S (line/interval) pattern. Herein, hereinafter, object the considerations of defocusing to be set as to the range of the definition of the depth of focus, it is, setting in the present embodiment It is ± 24 μm.It is in 2.5 μm of the online wide direction of linear pattern with 2.5 μm of intervals that L/S (line/interval) pattern, which is by a plurality of line width, It is arranged as the pattern of clathrate.Further, since image formation state is also different according to lighting condition, so in present embodiment In, the lighting condition based on lamp optical system IL, that is, illumination numerical aperture σ is set as 0.7.

Firstly, the case where for making defocus properties Cm variation shown in Fig. 9 be various values, i.e., as described above, for As unit of 0.5DOF variation be 0 × DOF, 0.5 × DOF, 1 × DOF, 1.5 × DOF, 2 × DOF, 2.5 × DOF, 3 × DOF, The case where 3.5 × DOF, 4 × DOF, the light intensity distributions and DOF/2 for calculating the L/S pattern image of best focus defocus shape State, the i.e. light intensity distributions in the L/S pattern image of the state defocused with+24 μm or -24 μm.

Based on the calculated result, contrast is calculated under each state of the defocus condition of best focus and DOF/2 Variation, Figure 12 be draw the variation figure.The horizontal axis of Figure 12 indicates in exposed width A in the defocus properties of arc-shaped variation The defocus width of Cm, the longitudinal axis indicate contrast, and the contrast variation of best focus is set as 0 μm (BestF), will defocus shape The contrast variation of state is set as ± 24 μm of Def.In addition, based on most preferably gathering shown in Figure 12 as a result, calculating in figure 13 illustrates The contrast [0 μm (BestF)] of coke-like state and the ratio between the contrast [± 24 μm of Def] of DOF/2 defocus condition, i.e., [0 μm (BestF)]/[± 24 μm of Def] result.Horizontal axis is set as in exposed width A in the defocus properties of arc-shaped variation by Figure 13 The longitudinal axis is set as contrast by the defocus width of Cm.

In addition, calculating the CD of the defocus width of the defocus properties Cm in each exposed width A in arc-shaped variation (Critical Dimension: critical dimension) value [μm] and assume photoresist cut level (as luminous intensity). In addition, calculating the CD value in the case where defocusing is ± 24 μm, calculating cuts level in the case where optimum focusing.In Figure 14 In the calculated result is shown.The horizontal axis of Figure 14 indicates dissipating on the defocus properties Cm in arc-shaped variation in exposed width A Burnt width, the left side of the longitudinal axis indicate CD value, and right side indicates to cut the relative light intensity of level.

As shown in figure 14, in the case where the picture to be projected is L/S pattern, relative to the amplitude defocused in exposure area Variation, the variation (variation of CD value) of line width is less, and as shown in Figure 12 of front, contrast is changed greatly.But such as Figure 13 It is shown, it is known that as the amplitude defocused becomes larger, in the contrast under best focus and pair under ± 24 μm of defocus conditions Than the ratio between degree close to 1.Like this, it is exposed in the scanning that the circumferential direction of the projection image planes Sm1 along cylinder planar sets exposed width A In light mode, by increasing the defocus width based on the defocus properties Cm in exposed width A being in arc-shaped variation, it can make pair Than degree ratio close to 1, the difference of the image contrast of best focus and the image contrast of defocus condition is reduced.As a result, for cylinder In the case where the light shield M (cylindric projection image planes Sm1) of shape, only pass through rotary motion, it will be able to which carrying out will be in optimum focusing When the variation of contrast and the contrast when defocusing inhibit to obtain very little, can be realized the line width for both inhibiting the pattern of exposure Variation, and increase sweeping for the variation surplus in focus direction (radial direction of barrel surface) for projecting the surface of image planes Sm1 and substrate P Retouch exposure.

Hereinafter, carrying out various operations for the case where the pattern of light shield is set as isolated line pattern.Herein, hereinafter, also will The considerations of defocusing object is set as the range of the definition of depth of focus DOF, that is, is set as ± 24 μm in the present embodiment.It is isolated The pattern of line is the linear pattern that line width is 2.5 μm.Further, since image formation state is also different according to lighting condition, so Illumination numerical aperture σ as lighting condition is set as 0.7.

In the same manner as with the L/S pattern emulated before the case where, firstly, being for by defocus properties Cm shown in Fig. 9 variation The case where various values, i.e., as described above, for as unit of 0.5DOF variation be 0 × DOF, 0.5 × DOF, 1 × DOF, The case where 1.5 × DOF, 2 × DOF, 2.5 × DOF, 3 × DOF, 3.5 × DOF, 4 × DOF, calculates the isolated of best focus The defocus condition of the light intensity distributions of line pattern picture, DOF/2 calculates isolated in the state of defocusing for+24 μm or -24 μm The light intensity distributions of line pattern picture.Based on the calculated result, finds out and as shown in figure 15 defocus width relative to every 0.5DOF The variation characteristic of the image contrast of the variation of degree.

The horizontal axis of Figure 15 indicates the defocus width of the defocus properties Cm in exposed width A in arc-shaped variation, longitudinal axis table Show the contrast of isolated line pattern image.In addition, based on shown in figure 15 as a result, showing in Figure 16 in the same manner as Figure 13 before The contrast [0 μm (BestF)] of best focus and the ratio between the contrast [± 24 μm of Def] of DOF/2 defocus condition are calculated out, That is the result of [0 μm (BestF)]/[± 24 μm of Def].Figure 16 is using horizontal axis as the dissipating in arc-shaped variation in exposed width A The ratio between the defocus width of burnt characteristic Cm, the longitudinal axis is spent as a comparison.

In addition, calculating the CD of the defocus width of the defocus properties Cm in each exposed width A in arc-shaped variation (Critical Dimension) value [μm] and assume photoresist cut level (as luminous intensity).In addition, calculating CD value in the case where defocusing is ± 24 μm, cuts level in the case where optimum focusing.The calculating is shown in FIG. 17 As a result.The horizontal axis of Figure 17 indicates the defocus width on the defocus properties Cm in arc-shaped variation in exposed width A, the longitudinal axis Left side indicates CD value, and right side indicates to cut the relative light intensity of level.As shown in figure 17, compared with for L/S pattern the case where, In the case that pattern is isolated line, the variation of the contrast of the variation relative to the amplitude defocused in exposure area is smaller.With It is opposite, it is known that in the case where pattern is isolated line, relative to the variation of defocus amount, the variation of line width (CD value) is bigger.

Therefore, by that will be increased based on defocus width caused by the defocus properties Cm changed in exposed width A in arc-shaped Greatly such as 2.5 × DOF or 3.0 × DOF can also prevent from exposing in substrate P even if the focal position of setting generates variation The line width variation of the pattern of light.That is, even if leading to preset projection image planes Sm1 and substrate P because of various reasons in exposure The relative positional relationship in a focus direction on surface change, can also prevent the line width relative to the focus variations from becoming Change, so as to keep the quality of the display panel successively manufactured in substrate P, electronic device well.In addition, knowing just to exist For 2.5 μm of line width of isolated line when optimum focusing, 2.5 μm cut level with will be based in exposed width A in circle The defocus width of the defocus properties Cm of arcuation variation increases and becomes being worth greatly, and result is relative to defocusing, and the variation of line width also becomes It is small.

In addition, Figure 14 and Figure 17 before use, are compared the difference for cutting level of the difference based on pattern When, if the defocus width based on the defocus properties Cm changed on circular arc in exposed width A is set as 2.25 × DOF, Relative to both L/S pattern and isolated line pattern to cut level (luminous intensity) roughly the same.Therefore, by that will be based on defocusing The defocus width of characteristic Cm is set as the range of 2.25 × DOF, even if the mask pattern mixed in L/S pattern and isolated line pattern In the case of, it can also manufacture the substrate of high-quality.Thus, it is not necessary to consider to cut level on L/S pattern and isolated line pattern Line width amendment (OPC, line width offset) of mask pattern needed in the case where inconsistent etc., can be such that the two coexists.In addition, not (OPC, offset) must be corrected for line width and reform light shield, or manufacture multiple light shields to adjust, therefore, can reduce system The step of making and cost.In addition, to line width set deviate, come change mask pattern a part line width, can also prevent as a result, Only generated in this part in turn the depth of focus narrow etc. it is bad.

[third embodiment]

Hereinafter, the 8 exposure device U3b for being directed to third embodiment are illustrated referring to Fig.1.In addition, in order to avoid repeating Record, be illustrated only for the part different from second embodiment, for the same composition portion of second embodiment Minute mark infuses appended drawing reference identical with second embodiment to be illustrated.Figure 18 is the exposure device for showing third embodiment The integrally-built figure of (substrate board treatment).The exposure device U3a of second embodiment is made using the light reflected with light shield For the structure of the reflection-type light shield of projected light beam, the exposure device U3b of third embodiment is made using with the light for transmiting light shield For the structure of the transmission-type light shield of projected light beam.

In the exposure device U3b of third embodiment, there is light shield holding mechanism 11a the light shield for keeping light shield MA to keep Cylinder 21a, the deflector roll 93 for supporting light shield holding cylinder 21a, the driven roller 94 for driving light shield holding cylinder 21a, driving portion 96.

Light shield holding cylinder 21a forms the light shield face configured with the illumination region IR on light shield MA.In the present embodiment, light Cover includes around the face that axis (central axis of the cylindrical shape) rotation parallel with the line segment obtains by line segment (bus) (hereinafter, claiming For barrel surface).Barrel surface is, for example, the outer peripheral surface etc. of the outer peripheral surface of cylinder, cylinder.Light shield holding cylinder 21a by such as glass or Quartz etc. is constituted, and in the cylindrical shape with defined thickness, outer peripheral surface (barrel surface) forms light shield face.That is, in this embodiment party In formula, the illumination region IR on light shield MA bends to the cylinder planar for having defined radius of curvature R m from center line.Light shield is protected Hold the part of the radial observation and the pattern registration of light shield MA of the slave light shield holding cylinder 21a in a 21a, such as light shield holding cylinder Center portion of the 21a in Y direction other than two end sides has translucency relative to illuminating bundle EL1.

Light shield MA is made into for example in the very thin glass plate of the good short strip shape of flatness (such as 100~500 μ of thickness M) using the planar sheet material light shield for foring the transmission-type of pattern by light shield layers such as chromium on a face, it is made to copy light shield The outer peripheral surface of holding cylinder 21a is bent, with winding (fitting) in the state of the outer peripheral surface come using.Light shield MA has not formed figure The non-pattern forming region of case is installed in non-pattern forming region to light shield holding cylinder 21a.Light shield MA can be kept from light shield Cylinder 21a is detached from.The light shield MA and light shield M of first embodiment is wound in it is equally possible that replacing by transparent cylinder base material structure At light shield holding cylinder 21a, and the outer peripheral surface for the light shield holding cylinder 21a being made of transparent cylinder base material directly utilize chromium etc. hide Photosphere draw to be formed mask pattern come it is integrated.In this case, light shield holding cylinder 21a also realizes the supporting member of light shield Function.

Deflector roll 93 and driven roller 94 extend along the Y direction parallel with the central axis of light shield holding cylinder 21a.Deflector roll 93 And driven roller 94 is arranged to rotate around the axis parallel with central axis.On deflector roll 93 and the respective axial direction of driven roller 94 The outer diameter of end is bigger than the shape of other parts, and the end and light shield holding cylinder 21a are external.In this way, deflector roll 93 and driven roller 94 are arranged to not contact with the light shield holding cylinder 21a light shield MA kept.Driven roller 94 is connect with driving portion 96.Driven roller 94 is logical It crosses and conducts the torque supplied from driving portion 96 to light shield holding cylinder 21a, to make light shield holding cylinder 21a around center axis rotation.

In addition, light shield holding mechanism 11a have a deflector roll 93, but quantity be not limit, be also possible to two with On.Similarly, light shield holding mechanism 11a have a driven roller 94, but quantity be not limit, be also possible to two with On.At least one of deflector roll 93 and driven roller 94 are configured in the inside of light shield holding cylinder 21a, can also be with light shield holding cylinder 21a is inscribed.In addition, the not pattern registration with light shield MA when the radial observation of slave light shield holding cylinder 21a in light shield holding cylinder 21a Part (two end sides of Y direction) can relative to illuminating bundle EL1 have translucency, can also not have translucency.Separately Outside, one of deflector roll 93 and driven roller 94 or both are also possible to for example round table-like, and central shaft (rotary shaft) is in Mandrel is not parallel.

The light supply apparatus 13a of present embodiment has light source (illustration omitted) and lamp optical system ILa.Light optics System ILa has the multiple (examples correspondingly arranged in the Y-axis direction with each of multiple projection optical system PL1~PL6 Such as 6) lamp optical system ILa1~ILa6.Light source is able to use various light in the same manner as above-mentioned various light supply apparatus 13a Source.The Illumination Distribution of illumination light shot from the light source is homogenized, such as is distributed via light conducting members such as optical fiber to multiple illuminations Optical system ILa1~ILa6.

Multiple lamp optical system ILa1~ILa6 are respectively provided with multiple optical components such as lens.Multiple lamp optical systems ILa1~ILa6 is respectively provided with: such as integrated optics system, cylindrical lenses, fly's-eye lens, utilizing uniform Illumination Distribution Illuminating bundle EL1 irradiates illumination region IR.In the present embodiment, multiple lamp optical system ILa1~ILa6 are configured at light shield The inside of holding cylinder 21a.Multiple lamp optical system IL1~IL6 are kept from the inside of light shield holding cylinder 21a by light shield respectively Each illumination region illumination on cylinder 21a, the light shield MA kept to the outer peripheral surface of light shield holding cylinder 21a.

Light supply apparatus 13a is guided by lamp optical system ILa1~ILa6 light shot from the light source, by the illumination light of guidance Beam EL1 is from light shield holding cylinder 21a internal irradiation to light shield MA.Light supply apparatus 13 is using illuminating bundle EL1 with uniform brightness pair The a part (illumination region IR) for the light shield MA that light shield holding mechanism 11a is kept is illuminated.In addition, light source can be only fitted to The inside of light shield holding cylinder 21a, also can be only fitted to the outside of light shield holding cylinder 21a.In addition, light source is also possible to fill with exposure Set U3b points of other devices (external device (ED)) opened.

Exposure device U3b is in the case where using transmission-type light shield as light shield, also in the same manner as exposure device U3, U3a, Have by the way that image planes will be projected with the position that relation of plane is set as reaching best focus on plane of exposure as described above is exposed Relationship at two can obtain effect similar to the above.

[the 4th embodiment]

Hereinafter, the 9 exposure device U3c for being directed to the 4th embodiment are illustrated referring to Fig.1.In addition, in order to avoid repeating Record, be illustrated only for the part being different from the first embodiment, for the same composition portion of first embodiment Minute mark infuses appended drawing reference same as the first embodiment to be illustrated.Figure 19 is the exposure device for showing the 4th embodiment The integrally-built figure of (substrate board treatment).The exposure device U3 of first embodiment is by the light shield of cylindric reflection-type M is held in the structure of rotatable light shield holding cylinder 21, and the exposure device U3c of the 4th embodiment is by flat reflection Type light shield MB is held in the structure of moveable light shield holding mechanism 11b.

In the exposure device U3c of the 4th embodiment, light shield holding mechanism 11b has the light shield MB's for keeping planar Light shield objective table 110 makes light shield objective table 110 scan mobile movement along the X direction in the plane orthogonal with median plane CL Device (illustration omitted).

Since the face P1 of the light shield MB of Figure 19 is substantially the plane parallel with X/Y plane, so the throwing reflected from light shield MB The chief ray of shadow light beam EL2 is vertical with X/Y plane.Therefore, from being illuminated to each illumination region IR1~IR6 on light shield MB Lamp optical system IL1~IL6 illuminating bundle EL1 chief ray be also configured as it is vertical with X/Y plane.

In the case where the chief ray of the illuminating bundle EL1 illuminated to light shield MB is vertical with X/Y plane, polarising beam splitter PBS with the incidence angle θ 1 for being incident to the chief ray of the illuminating bundle EL1 of quarter wave plate 41 is Brewster (Brewster) angle θ B, And it is configured by the chief ray for the illuminating bundle EL1 that quarter wave plate 41 the reflects mode vertical with X/Y plane.With the polarized light beam splitting The configuration of the configuration change of device PBS, light optics mould group ILM is also suitably changed.

In addition, in the case where the chief ray of the projected light beam EL2 reflected from light shield MB is vertical with X/Y plane, projection optics The angle of first reflecting surface P3 of the first deflecting member 70 possessed by the first optical system 61 of mould group PLM is set as, to coming from The projected light beam EL2 of polarising beam splitter PBS is reflected, and the projected light beam EL2 after making reflection is entered by the first lens group 71 It is incident upon the first concave mirror 72.Specifically, by the first reflecting surface P3 of the first deflecting member 70 be set as substantially with the second optical axis BX2 (X/Y plane) is at 45 °.

In addition, in the fourth embodiment, in the same manner as Fig. 2 of front, when being observed in XZ plane, from light shield MB The perimeter of central point of central point to illumination region IR2 (and IR4, IR6) of illumination region IR1 (and IR3, IR5) set It is set to, and from the central point of the view field PA1 (and PA3, PA5) in the substrate P for copying bearing surface P2 to the second projected area The perimeter of the central point of domain PA2 (and PA4, PA6) is substantially equal.

In the exposure device U3c of Figure 19, slave control device 16 also controls the mobile device of light shield holding mechanism 11b (line motor, executing agency of fine motion of scan exposure etc.), the rotation with substrate supporting cylinder 25 synchronously drives light shield Objective table 110.In the exposure device U3c of Figure 19, in the +X direction synchronizing moving to light shield MB and after carrying out scan exposure, Carry out the movement (backrush) for the initial position for making light shield MB be back to -X direction.Therefore, make substrate supporting cylinder 25 to advise In the case that constant speed degree continuous rotation carrys out at the uniform velocity constantly handling substrate P, during light shield MB carries out rolling back action, not in base Pattern exposure is carried out on plate P, but panel pattern dispersedly (discretely) is formed in the carry direction of substrate P.But In practical application, it is assumed that the speed (being peripheral speed herein) of the substrate P in scan exposure and the speed of light shield MB is 50~ 100mm/s, if therefore can be contracted in light shield MB backrush with the maximum speed driving light shield objective table 110 of such as 500mm/s Blank between the small panel pattern being formed in substrate P in carry direction.

Hereinafter, referring to Figure 20 for the projection image planes and base of the pattern of the light shield of the exposure device U3c of the 4th embodiment The exposure relation of plane of plate is illustrated.Figure 20 is the exposure relation of plane of the projection image planes for showing the pattern of light shield and substrate Explanatory diagram.

Exposure device U3c is by the way that projected light beam EL2 is imaged by projection optical system PL, to form the pattern of light shield MB Project image planes Sm2.Projection image planes Sm2 is the position of the pattern imaging of light shield MB, is the position for reaching optimum focusing.Herein, light Cover MB is configured to plane as described above.Projection image planes Sm2 is also plane (being straight line in ZX plane) as a result,.In addition, exposure The surface of the substrate P of device U3c becomes plane of exposure Sp.Herein, plane of exposure Sp refers to the surface of substrate P.Substrate P is as described above It is held on the substrate supporting cylinder 25 of cylindrical shape.As a result, plane of exposure Sp become radius of curvature be Rp curved surface (in ZX plane It is curve).In addition, the direction orthogonal with scan exposure direction of plane of exposure Sp becomes the axis of curved surface.Therefore, as shown in figure 20, Plane of exposure Sp becomes relative to the curved curve in scan exposure direction.Plane of exposure Sp is on the scan exposure direction of view field PA Exposed width A in the variable quantity of position be Δ P.Projecting image planes Sm2 is plane.Therefore, projection image planes Sm2 is in view field The variable quantity of the position in exposed width A on the scan exposure direction of PA is 0.Herein, exposure device U3c is by plane of exposure Sp phase Position for projecting image planes Sm2 is set as actual exposure face Spa.Actual exposure face Spa on scan exposure direction with projection image Face Sm2 intersects at different two positions Pa2, Pb2.In addition, exposure device U3c can be by adjusting projection optical system PL's The position of each optical component, or light is adjusted using the one party in light shield holding mechanism 11b and base supporting mechanism 12 The interval between MB and substrate P is covered, to change position of the plane of exposure relative to projection image planes Sm2.

Exposure device U3c intersects projection image planes Sm2 in different two positions Pa2, Pb2 with actual exposure face Spa, by This, in exposed width A, position Pa2 on the Spa of actual exposure face, focus state becomes optimum focusing, in actual exposure face Position Pb2 on Spa, focus state become optimum focusing.

Even if the surface of light shield MB is set plane by exposure device U3c, cylindrical shape is set by the surface of substrate P, Also it can assign and mask pattern is projected on scan exposure obtained from substrate P side in the same manner as exposure device U3, U3a, U3b Projection image planes Sm2 on direction and the plane of exposure Sp for the substrate P being exposed are poor with cylindrical shape.Moreover, the throwing of exposure device U3c Image plane Sm2 intersects at two different positions Pa2, Pb2 from actual exposure face Spa, in two different positions, plane of exposure Focus state reaches optimum focusing.

Exposure device U3c can also utilize the rotary motion of light shield holding cylinder 21 as a result, and on scan exposure direction Change focus state continuously in exposed width A, moreover, can prevent the image contrast relative to actual focusing from becoming Change.In addition, exposure device U3c can be obtained and the same various effects of exposure device U3.In this way, even if will only project image planes In the case where being set as curved surface with one of plane of exposure (surface of substrate P), it can also obtain and image planes and plane of exposure will be projected Both of which is set as the case where curved surface same effect.

Herein, exposure device U3c can find out the defocus width in arc-shaped variation in exposed width A according to the following formula Δ, following formula are by the circular cylinder radius r of the projection image planes Sm2 on scan exposure direction of the substrate P of above-mentioned expression formula₁It is set as 0 obtains.

Δ=r₂-((r₂ ²)-(A/2)²)^1/2

Herein, in exposure device U3c, since the radius of curvature of the projection image planes Sm2 of mask pattern is ∞, so exposing It can be found out in optical width A in the formula 3 that the defocus properties Cm of arc-shaped variation only passes through front.That is, in the feelings of exposure device U3c Defocus properties Cm (=Δ Rp) under condition is found out according to the following formula.

[mathematical expression 5]

In addition, being kept with curved surface in the light shield holding mechanism and base supporting mechanism of the exposure device of present embodiment A side as the first supporting member, the side that is supported using curved surface or plane is as the second supporting member.

< exposure method >

Hereinafter, being illustrated referring to Figure 21 for exposure method.Figure 21 is the flow chart for showing exposure method.

In the exposure method shown in Figure 21, firstly, substrate P is supported on bearing surface P2 using base supporting mechanism (step S101) supports light shield M (step S102) using light shield holding mechanism on the P1 of face.Light shield M becomes with substrate P as a result, Aspectant state.In addition, the sequence of step S101 and step S102 can also overturn.In addition, certain in face P1, bearing surface P2 One side is as the first face, and another party is as the second face.First face is the shape with regulation curvature bending at cylinder planar.

Then, focal position (step S103) of the adjustment relative to plane of exposure.Specifically, on the surface for being set in substrate P On view field PA exposed width A in, focal position is set on scan exposure direction comprising two optimum focusings The position of position.

After the completion of the adjustment of focal position, starting, which relatively moves substrate P and light shield M on scan exposure direction, (turns It is dynamic) (step S104).That is, starting to carry out making substrate P using at least one party in base supporting mechanism and light shield holding mechanism The movement moved on scan exposure direction at least one party in light shield M.

After starting relative movement, start to project projected light beam (step S105) into view field PA.That is, autogamy in future The light beam for being placed in the pattern of the light shield of the illumination region IR of illumination light is projeced into the view field PA configured with substrate P.Scheme as a result, For exposure method shown in 21 on the plane of exposure of substrate P, it includes best at two for being incident upon on scan exposure direction to view field The light beam of focal position.

Exposure method as described above, the light beam of focal position has been had adjusted by projecting, can be in the plane of exposure of substrate On, will include on scan exposure direction at two the light beam of best focus position be projected to view field.On obtaining The various effects stated.In addition, in the present embodiment, illustrating the case where adjusting focal position, but device can also be passed through Setting, so that the position comprising best focus position at two on scan exposure direction is become focal position.

< device making method >

Hereinafter, being illustrated referring to Figure 22 to device making method.Figure 22 is the device shown using device inspection apparatus The flow chart of manufacturing method.

In the device making method shown in Figure 22, firstly, carrying out such as the display based on self-emission device organic EL The function and performance design of panel, the circuit pattern needed using designs such as CAD, wiring pattern (step S201).Then, it is based on By the pattern of each layer in the various layers of the designs such as CAD, to make the light shield M (step S202) of required layer amount.In addition, Prepare the supply for being wound with the flexible substrate P (resin film, metal foil film, plastics etc.) of the substrate as display panel in advance With volume FR1 (step S203).In addition, the substrate P of the web-like prepared in step S203 is can be as needed to its surface The substrate that is modified, the substrate for being formed with basal layer (such as minute asperities based on coining mode) in advance, are laminated in advance There is the substrate of photosensitive functional membrane or hyaline membrane (insulating materials).

Then, form that (film is partly led by the electrode, wiring, insulating film, the TFT that constitute display panel device in substrate P Body) etc. compositions backsheet layer, and with the mode being laminated on the backboard formed based on self-emission devices such as organic EL shine Layer (display pixel portion) (step S204).In step S204, the exposure illustrated in each embodiment in front is used Any one of device U3, U3a, U3b, U3c are exposed processing.It also include being carried out to photoresist layer in exposure-processed The previous photo-mask process of exposure, but further include the substrate coated with photonasty silane coupling material to substitution photoresist P carries out pattern exposure and is formed on the surface using hydrophily and hydrophobic pattern, or for electroless plating and to sense The process that the catalyst of photosensitiveness carries out pattern exposure.The developing procedure that photoresist is carried out in previous photo-mask process, Implementation forms the wet type operation of the pattern (wiring, electrode etc.) of metal film in non-electrolytic plating method, or utilizes and contain silver nanoparticle The printing process etc. that the electrically conductive ink etc. of particle draws a design.

Then, base is cut by each display panel device being continuously manufactured by the substrate P of strip by volume mode Plate P, protective film (environment reply barrier layer) and/or colored filter etc. are pasted on the surface of each display panel device, from And assembly device (step S205).Then, inspection operation is carried out, checks whether display panel device normally functions, is It is no to meet desired performance and characteristic (step S206).By the above, display panel (flexible display) can be manufactured.

Description of symbols

1 device inspection apparatus

2 substrate feeding devices

4 substrate recyclable devices

5 host control devices

11 light shield holding mechanisms

12 base supporting mechanisms

13 light supply apparatus

16 slave control devices

21 light shield holding cylinder

25 substrate supporting cylinders

31 light sources

32 light conducting members

41 quarter wave plates

51 collimation lenses

52 fly's-eye lenses

53 collector lenses

54 cylindrical lenses

55 illuminated field diaphragms

56 relay lens

61 first optical systems

62 second optical systems

63 perspective view diaphragms

64 focuses correct optical component

65 use optical component as offset

Optical component is used in the amendment of 66 multiplying powers

67 rotation correction mechanisms

68 polarization adjustment mechanisms

70 first deflecting members

71 first lens groups

72 first concave mirrors

80 second deflecting members

81 second lens groups

82 second concave mirrors

110 light shield objective tables

P substrate

FR1 supply volume

FR2 recycling volume

U1~Un processing unit

U3 exposure device (substrate board treatment)

M light shield

MA light shield

AX1 first axle

The second axis of AX2

P1 light shield face

P2 bearing surface

P7 intermediate image plane

EL1 illuminating bundle

EL2 projected light beam

Rm radius of curvature

Rp radius of curvature

CL median plane

PBS polarising beam splitter

IR1~IR6 illumination region

IL1~IL6 lamp optical system

ILM light optics mould group

PA1~PA6 view field

PLM projection optics mould group

Claims (37)

1. a kind of substrate board treatment has the light beam of the pattern from light shield being projected to the view field configured with substrate Projection optical system, wherein the light shield is configured at the illumination region of illumination light, and the feature of the substrate board treatment exists In, comprising:

First supporting member, in the side region in the illumination region and the view field, along to provide song Rate bends to the mode in the first face of cylinder planar to support the side in the light shield and the substrate；

Second supporting member, in another party region in the illumination region and the view field, along with rule The mode in the second face of fixed curvature supports another party in the light shield and the substrate；With

Mobile mechanism rotates first supporting member, the light shield that supports first supporting member and described One party in substrate moves on scan exposure direction,

The projection optical system will include most preferably poly- at two on the scan exposure direction on the plane of exposure of the substrate The light beam of burnt position is projected to the view field.

2. substrate board treatment as described in claim 1, which is characterized in that

The projection optical system along the scan exposure direction to obtained from the pattern projection by the light shield to project The mode that cylindrical shape difference is assigned between image planes and the plane of exposure of the substrate projects the light beam.

3. substrate board treatment as claimed in claim 1 or 2, which is characterized in that

The projection optical system is set as by the defocus amount at the midpoint on the scan exposure direction of the view field Δ and in the case that the depth of focus is set as DOF, meets 0.5 < Δ/DOF≤3.

4. substrate board treatment as claimed in claim 3, which is characterized in that

The projection optical system meets 1≤Δ/DOF.

5. the substrate board treatment as described in any one of claim 1,2,4, which is characterized in that

The projection optical system has multiple segmentation projection optical systems,

The segmentation projection optical system is configured to column-shaped on the direction orthogonal with the scan exposure direction, respectively to correspondence The view field project the light beam.

6. substrate board treatment as claimed in claim 3, which is characterized in that

The projection optical system has multiple segmentation projection optical systems,

The segmentation projection optical system is configured to column-shaped on the direction orthogonal with the scan exposure direction, respectively to correspondence The view field project the light beam.

7. substrate board treatment as claimed in claim 5, which is characterized in that

Multiple segmentation projection optical systems of the projection optical system are at least configured on the scan exposure direction Two column, on the direction orthogonal with the scan exposure direction, the projected area of the adjacent segmentation projection optical system The end in domain overlaps each other.

8. substrate board treatment as claimed in claim 6, which is characterized in that

Multiple segmentation projection optical systems of the projection optical system are at least configured on the scan exposure direction Two column, on the direction orthogonal with the scan exposure direction, the projected area of the adjacent segmentation projection optical system The end in domain overlaps each other.

9. substrate board treatment as claimed in claim 7, which is characterized in that

The projection optical system is in each view field to multiple segmentation projection optical systems in the scan exposure In the case that width on direction carries out accumulative operation, the aggregate-value is permanent on the direction orthogonal with the scan exposure direction It is fixed.

10. substrate board treatment as claimed in claim 8, which is characterized in that

The projection optical system is in each view field to multiple segmentation projection optical systems in the scan exposure In the case that width on direction carries out accumulative operation, the aggregate-value is permanent on the direction orthogonal with the scan exposure direction It is fixed.

11. the substrate board treatment as described in any one of claim 1,2,4,6~10, which is characterized in that

First supporting member supports the light shield,

Second supporting member supports the substrate.

12. substrate board treatment as claimed in claim 3, which is characterized in that

First supporting member supports the light shield,

Second supporting member supports the substrate.

13. substrate board treatment as claimed in claim 5, which is characterized in that

First supporting member supports the light shield,

Second supporting member supports the substrate.

14. the substrate board treatment as described in any one of claim 1,2,4,6~10, which is characterized in that

First supporting member supports the substrate,

Second supporting member supports the light shield.

15. substrate board treatment as claimed in claim 3, which is characterized in that

First supporting member supports the substrate,

Second supporting member supports the light shield.

16. substrate board treatment as claimed in claim 5, which is characterized in that

First supporting member supports the substrate,

Second supporting member supports the light shield.

17. the substrate board treatment as described in any one of claim 1,2,4,6~10,12,13,15,16, feature exist In,

Second face is to provide curvature bending at cylinder planar.

18. substrate board treatment as claimed in claim 3, which is characterized in that

Second face is to provide curvature bending at cylinder planar.

19. substrate board treatment as claimed in claim 5, which is characterized in that

Second face is to provide curvature bending at cylinder planar.

20. substrate board treatment as claimed in claim 11, which is characterized in that

Second face is to provide curvature bending at cylinder planar.

21. substrate board treatment as claimed in claim 14, which is characterized in that

Second face is to provide curvature bending at cylinder planar.

22. substrate board treatment as claimed in claim 17, which is characterized in that

The projection optical system is when being set as A, by the light for the width of the view field on the scan exposure direction The circular cylinder radius of the projection image planes of the pattern of cover is set as r₁, by the cylinder of the plane of exposure on scan exposure direction of the substrate Radius is set as r₂, when being set as NA by the numerical aperture of the projection optical system and exposure wavelength be set as λ, meet 0.5 × (λ/ NA²) < r₁-((r₁ ²)-(A/2)²)^1/2+r₂-((r₂ ²)-(A/2)²)²≤3×λ/NA²。

23. the substrate board treatment as described in any one of claim 18~21, which is characterized in that

The projection optical system is when being set as A, by the light for the width of the view field on the scan exposure direction The circular cylinder radius of the projection image planes of the pattern of cover is set as r₁, by the cylinder of the plane of exposure on scan exposure direction of the substrate Radius is set as r₂, when being set as NA by the numerical aperture of the projection optical system and exposure wavelength be set as λ, meet 0.5 × (λ/ NA²) < r₁-((r₁ ²)-(A/2)²)^1/2+r₂-((r₂ ²)-(A/2)²)²≤3×λ/NA²。

24. substrate board treatment as claimed in claim 22, which is characterized in that

The projection optical system meets (λ/NA²) < r₁-((r₁ ²)-(A/2)²)^1/2+r₂-((r₂ ²)-(A/2)²)^1/2。

25. substrate board treatment as claimed in claim 23, which is characterized in that

The projection optical system meets (λ/NA²) < r₁-((r₁ ²)-(A/2)²)^1/2+r₂-((r₂ ²)-(A/2)²)^1/2。

26. the processing substrate as described in any one of claim 1,2,4,6~10,12,13,15,16,18~22,24,25 fills It sets, which is characterized in that

Along the projection exposure direction make throwing obtained from the pattern of the light shield being projected as the projection optical system Difference at a distance from the plane of exposure of image plane and the substrate, with the width of the view field on the scan exposure direction Center is that axis symmetrically changes in line.

27. substrate board treatment as claimed in claim 3, which is characterized in that

Along the projection exposure direction make throwing obtained from the pattern of the light shield being projected as the projection optical system Difference at a distance from the plane of exposure of image plane and the substrate, with the width of the view field on the scan exposure direction Center is that axis symmetrically changes in line.

28. substrate board treatment as claimed in claim 5, which is characterized in that

Along the projection exposure direction make throwing obtained from the pattern of the light shield being projected as the projection optical system Difference at a distance from the plane of exposure of image plane and the substrate, with the width of the view field on the scan exposure direction Center is that axis symmetrically changes in line.

29. substrate board treatment as claimed in claim 11, which is characterized in that

Along the projection exposure direction make throwing obtained from the pattern of the light shield being projected as the projection optical system Difference at a distance from the plane of exposure of image plane and the substrate, with the width of the view field on the scan exposure direction Center is that axis symmetrically changes in line.

30. substrate board treatment as claimed in claim 14, which is characterized in that

Along the projection exposure direction make throwing obtained from the pattern of the light shield being projected as the projection optical system Difference at a distance from the plane of exposure of image plane and the substrate, with the width of the view field on the scan exposure direction Center is that axis symmetrically changes in line.

31. substrate board treatment as claimed in claim 17, which is characterized in that

Along the projection exposure direction make throwing obtained from the pattern of the light shield being projected as the projection optical system Difference at a distance from the plane of exposure of image plane and the substrate, with the width of the view field on the scan exposure direction Center is that axis symmetrically changes in line.

32. substrate board treatment as claimed in claim 23, which is characterized in that

Along the projection exposure direction make throwing obtained from the pattern of the light shield being projected as the projection optical system Difference at a distance from the plane of exposure of image plane and the substrate, with the width of the view field on the scan exposure direction Center is that axis symmetrically changes in line.

33. substrate board treatment as claimed in claim 26, which is characterized in that

First supporting member is configured to light shield holding cylinder, which has with first axle at a distance of defined curvature half The cylindric outer peripheral surface of diameter can rotate as first face around the first axle,

The pattern of the light shield is formed in the outer peripheral surface of the light shield holding cylinder.

34. the substrate board treatment as described in any one of claim 27~32, which is characterized in that

First supporting member is configured to light shield holding cylinder, which has with first axle at a distance of defined curvature half The cylindric outer peripheral surface of diameter can rotate as first face around the first axle,

The pattern of the light shield is formed in the outer peripheral surface of the light shield holding cylinder.

35. substrate board treatment as claimed in claim 33, which is characterized in that

The substrate is the flexible sheet material that the scan exposure direction is set as to the direction of long side,

Also there is substrate supporting cylinder, which has the second axis configured in parallel with the first axle at a distance of defined The cylindric outer peripheral surface of radius of curvature can rotate as second face around second axis,

The flexible sheet material by the substrate supporting cylinder periphery surface bearing.

36. substrate board treatment as claimed in claim 34, which is characterized in that

The substrate is the flexible sheet material that the scan exposure direction is set as to the direction of long side,

Also there is substrate supporting cylinder, which has the second axis configured in parallel with the first axle at a distance of defined The cylindric outer peripheral surface of radius of curvature can rotate as second face around second axis,

The flexible sheet material by the substrate supporting cylinder periphery surface bearing.

37. a kind of device making method characterized by comprising

The substrate is supplied to substrate board treatment described in any one of claims 1 to 36,

Form the pattern of the light shield on the substrate using the substrate board treatment.