TWI752469B - Scanning exposure method and device manufacturing method - Google Patents

Scanning exposure method and device manufacturing method Download PDF

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TWI752469B
TWI752469B TW109113021A TW109113021A TWI752469B TW I752469 B TWI752469 B TW I752469B TW 109113021 A TW109113021 A TW 109113021A TW 109113021 A TW109113021 A TW 109113021A TW I752469 B TWI752469 B TW I752469B
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substrate
projection
exposure
mask
illumination
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TW109113021A
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TW202032294A (en
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加藤正紀
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日商尼康股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/24Curved surfaces
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70141Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Liquid Crystal (AREA)

Abstract

提供能以高生產性生產高品質之基板之基板處理裝置及元件製造方法。基板處理裝置及元件製造方法,具備:第1支承構件,係以在照明區域與投影區域中之一方區域中沿著以既定曲率彎曲成圓筒面狀之第1面之方式支承光罩與基板中之一方;第2支承構件,係以在照明區域與投影區域中之另一方區域中沿著既定之第2面之方式支承光罩與基板中之另一方;以及移動機構,使第1支承構件旋轉,使該第1支承構件所支承之光罩與基板中之任一方移動於掃描曝光方向。投影光學系,係在基板之曝光面,將於掃描曝光方向包含兩處最佳聚焦位置之光束投射於投影區域。 Provided are a substrate processing apparatus and a device manufacturing method capable of producing high-quality substrates with high productivity. A substrate processing apparatus and a device manufacturing method, comprising: a first support member for supporting a mask and a substrate along a first surface curved in a cylindrical shape with a predetermined curvature in one of an illumination region and a projection region one of them; a second support member for supporting the other of the photomask and the substrate along a predetermined second surface in the other of the illumination area and the projection area; and a moving mechanism for the first support The member is rotated to move either one of the photomask and the substrate supported by the first support member in the scanning exposure direction. The projection optical system is located on the exposure surface of the substrate, and projects the light beam including two optimal focusing positions in the scanning exposure direction on the projection area.

Description

掃描曝光方法及元件製造方法 Scanning exposure method and device manufacturing method

本發明係關於將光罩之圖案投影至基板且於該基板曝光該圖案之基板處理裝置、元件製造方法及曝光方法。 The present invention relates to a substrate processing apparatus, a device manufacturing method, and an exposure method for projecting a pattern of a photomask onto a substrate and exposing the pattern on the substrate.

有製造液晶顯示器等顯示元件或半導體等各種元件之元件製造系統。元件製造系統具備曝光裝置等基板處理裝置。基板處理裝置,係將配置於照明區域之光罩(或標線片)上所形成之圖案之像投影至配置於投影區域之基板等,將該圖案曝光於基板。用於基板處理裝置之光罩一般為平面狀者,而為了連續於基板上掃描曝光複數個元件圖案,亦已知有作成圓筒狀者(專利文獻1)。 There are component manufacturing systems that manufacture display elements such as liquid crystal displays and various elements such as semiconductors. The device manufacturing system includes a substrate processing apparatus such as an exposure apparatus. The substrate processing apparatus projects the image of the pattern formed on the mask (or reticle) arranged in the illumination area onto the substrate etc. arranged in the projection area, and exposes the pattern to the substrate. A mask used in a substrate processing apparatus is generally flat, and a cylindrical shape is also known in order to continuously scan and expose a plurality of element patterns on a substrate (Patent Document 1).

又,作為基板處理裝置,有專利文獻2所記載之投影曝光裝置。專利文獻2所記載之投影曝光裝置,具有:基板保持具,係將感光基板於基板載台上保持成在一維移動方向上感光基板之表面與被投影光學系投影之圖案像之最佳成像面相對傾斜一定量;以及保持具驅動手段,係以在掃描曝光之期間沿著感光基板傾斜之方向移動之方式連動於基板載台之一維方向之移動而使基板保持具移動於投影光學系之光軸方向。投影曝光裝置,藉由上述構成,能依據一維方向之掃描曝光之位置使投射於感光基板之曝光面之光束聚焦狀態變化。 Moreover, as a substrate processing apparatus, there exists the projection exposure apparatus described in patent document 2. The projection exposure apparatus described in Patent Document 2 has a substrate holder for holding the photosensitive substrate on the substrate stage so that the surface of the photosensitive substrate and the pattern image projected by the projection optical system are optimally formed in the one-dimensional moving direction. The surfaces are relatively inclined by a certain amount; and the holder driving means is linked to the movement in one dimension of the substrate stage in a manner of moving along the inclined direction of the photosensitive substrate during the scanning exposure, so that the substrate holder is moved to the projection optical system the direction of the optical axis. With the above configuration, the projection exposure apparatus can change the focus state of the light beam projected on the exposure surface of the photosensitive substrate according to the position of the scanning exposure in the one-dimensional direction.

〔先行技術文獻〕 [Prior technical documents]

[專利文獻1] 國際公開2008/029917號 [Patent Document 1] International Publication No. 2008/029917

[專利文獻2] 日本特許第2830492號公報 [Patent Document 2] Japanese Patent No. 2830492

如專利文獻2所記載,藉由一邊使聚焦狀態變化一邊進行曝光,在因光罩與基板之相對關係偏移或光學系之偏移等使投影光學系所投射之光束與曝光面之關係產生變化時,亦可在包含最佳聚焦位置之聚焦狀態下進行曝光。藉此,能抑制曝光於感光基板(光阻層)之像對比之變化。 As described in Patent Document 2, by exposing while changing the focus state, the relationship between the light beam projected by the projection optical system and the exposure surface occurs due to the relative displacement between the mask and the substrate, the displacement of the optical system, and the like. When changing, exposure can also be performed in a focus state including the best focus position. Thereby, the change of the image contrast exposed to the photosensitive substrate (photoresist layer) can be suppressed.

然而,專利文獻2所記載之投影曝光裝置,係使用基板保持具使基板相對投影光學裝置(投影光學系)傾斜。因此,相對位置之調整(控制)變得複雜。特別是,在就基板上之複數個曝光區域(每一照射)之每一個相對掃描光罩與基板以使基板步進移動之步進掃描方式中,必須在基板上之各曝光區域之各掃描曝光高速反覆控制基板保持具之傾斜與往聚焦方向之移動,控制變得複雜且導致振動產生。 However, in the projection exposure apparatus described in Patent Document 2, a substrate holder is used to incline the substrate with respect to the projection optical device (projection optical system). Therefore, the adjustment (control) of the relative position becomes complicated. In particular, in the step-and-scan method in which the reticle and the substrate are relatively scanned for each of a plurality of exposure areas (each shot) on the substrate to move the substrate in steps, each scan of each exposure area on the substrate must be performed The high-speed exposure repeatedly controls the inclination of the substrate holder and the movement in the focus direction, which makes the control complicated and causes vibration.

又,掃描曝光方式之基板處理裝置,若在掃描曝光方向之基板上之曝光區域寬度較小,則賦予感光基板之曝光量變少。因此,必須增大投射於基板上之曝光區域之曝光用光之每一單位面積之照度或延遲掃描曝光之速度。相反地,若增大在掃描曝光方向之基板上之曝光區域寬度,則有時會有所形成之圖案品質(轉印忠實度)降低之情形。 In addition, in the substrate processing apparatus of the scanning exposure method, if the width of the exposure area on the substrate in the scanning exposure direction is small, the exposure amount imparted to the photosensitive substrate is reduced. Therefore, it is necessary to increase the illuminance per unit area of the exposure light projected on the exposure area on the substrate or the speed of delayed scanning exposure. Conversely, if the width of the exposure area on the substrate in the scanning exposure direction is increased, the quality of the formed pattern (transfer fidelity) may be reduced in some cases.

本發明之態樣,其目的在於提供能以高生產性生產高品質之基板之基板處理裝置、元件製造方法及曝光方法。 An aspect of the present invention aims to provide a substrate processing apparatus, a device manufacturing method, and an exposure method capable of producing high-quality substrates with high productivity.

根據本發明第1態樣,提供一種基板處理裝置,具備投影光學系,其將來自配置於照明光照明區域之光罩之圖案之光束投射於配置基板之投影區域,具備:第1支承構件,係以在前述照明區域與前述投影區域中之一方區域中 沿著以既定曲率彎曲成圓筒面狀之第1面之方式,支承前述光罩與前述基板中之一方;第2支承構件,係以在前述照明區域與前述投影區域中之另一方區域中沿著既定之第2面之方式,支承前述光罩與前述基板中之另一方;以及移動機構,使前述第1支承構件旋轉,以使該第1支承構件所支承之前述光罩與前述基板中之任一方移動於掃描曝光方向;前述投影光學系,係在前述基板之曝光面,將於前述掃描曝光方向包含兩處最佳聚焦位置之光束投射於前述投影區域。 According to a first aspect of the present invention, there is provided a substrate processing apparatus including a projection optical system for projecting a light beam from a pattern of a mask arranged in an illumination light illumination region on a projection region of an arrangement substrate, comprising: a first support member, in one of the illumination area and the projection area One of the mask and the substrate is supported along the first surface curved into a cylindrical surface shape with a predetermined curvature; the second support member is located in the other region of the illumination region and the projection region. supporting the other one of the mask and the substrate along a predetermined second surface; and a moving mechanism for rotating the first support member so as to make the mask and the substrate supported by the first support member Either one of them moves in the scanning exposure direction; the projection optical system, which is attached to the exposure surface of the substrate, projects the light beam including two optimal focus positions in the scanning exposure direction onto the projection area.

根據本發明第2態樣,提供一種元件製造方法,包含:對前述基板處理裝置供應前述基板的動作;以及使用第1態樣所記載之基板處理裝置於前述基板形成前述光罩之圖案的動作。 According to a second aspect of the present invention, there is provided a device manufacturing method comprising: an operation of supplying the substrate to the substrate processing apparatus; and an operation of forming a pattern of the mask on the substrate using the substrate processing apparatus described in the first aspect .

根據本發明第3態樣,提供一種曝光方法,將來自配置於照明光照明區域之光罩之圖案之光束投射於配置基板之投影區域,其包含:以在前述照明區域與前述投影區域中之一方區域中沿著以既定曲率彎曲成圓筒面狀之第1面之方式,支承前述光罩與前述基板中之一方的動作;以在前述照明區域與前述投影區域中之另一方區域中沿著既定之第2面之方式,支承前述光罩與前述基板中之另一方的動作;使以該第1面所支承之前述光罩與前述基板中之任一個沿著前述第1面旋轉,使以該第1面支承之前述光罩與前述基板中之任一個移動於掃描曝光方向的動作;以及在前述基板之曝光面,將於前述掃描曝光方向包含兩處最佳聚焦位置之光束投射於前述投影區域的動作。 According to a third aspect of the present invention, there is provided an exposure method for projecting a light beam from a pattern of a mask arranged in an illumination light illumination area onto a projection area of an arrangement substrate, comprising: in the illumination area and the projection area between the illumination area and the projection area. The movement of supporting one of the photomask and the substrate in one area along the first surface curved into a cylindrical surface shape with a predetermined curvature; in the other area of the illumination area and the projection area The operation of supporting the other of the mask and the substrate in the manner of the predetermined second surface; rotating either the mask or the substrate supported by the first surface along the first surface, The action of moving any one of the mask and the substrate supported by the first surface in the scanning exposure direction; and projecting a light beam including two optimal focus positions in the scanning exposure direction on the exposure surface of the substrate Actions in the aforementioned projection area.

根據本發明之態樣,藉由在基板之曝光面之掃描曝光方向中將包含兩處最佳聚焦位置之光束投射於投影區域,而能以高生產性生產高品質之基板。 According to the aspect of the present invention, a high-quality substrate can be produced with high productivity by projecting a light beam including two optimal focus positions on the projection area in the scanning exposure direction of the exposure surface of the substrate.

1:元件製造系統 1: Component Manufacturing System

2:基板供應裝置 2: Substrate supply device

4:基板回收裝置 4: Substrate recovery device

5:上位控制裝置 5: upper control device

11:光罩保持機構 11: Reticle holding mechanism

12:基板支承機構 12: Substrate support mechanism

13:光源裝置 13: Light source device

16:下位控制裝置 16: Lower control device

21:光罩保持圓筒 21: Reticle Holder Cylinder

25:基板支承圓筒 25: Substrate support cylinder

31:光源 31: Light source

32:導光構件 32: Light guide member

41:1/4波長板 41:1/4 wavelength plate

51:準直透鏡 51: collimating lens

52:複眼透鏡 52: Fly eye lens

53:聚光透鏡 53: Condenser lens

54:柱面透鏡 54: Cylindrical lens

55:照明視野光闌 55: Illumination field diaphragm

56:中繼透鏡 56: Relay lens

61:第1光學系 61: 1st Optical System

62:第2光學系 62: 2nd Optical System

63:投影視野光闌 63: Projection field diaphragm

64:聚焦修正光學構件 64: Focus correction optics

65:像偏移用光學構件 65: Optical components for image shift

66:倍率修正用光學構件 66: Optical components for magnification correction

67:旋轉修正機構 67: Rotation correction mechanism

68:偏光調整機構 68: Polarization adjustment mechanism

70:第1偏向構件 70: 1st deflection member

71:第1透鏡群 71: 1st lens group

72:第1凹面鏡 72: 1st concave mirror

80:第2偏向構件 80: 2nd deflection member

81:第2透鏡群 81: 2nd lens group

82:第2凹面鏡 82: 2nd concave mirror

110:光罩載台 110: Photomask stage

P:基板 P: substrate

FR1:供應用捲筒 FR1: Supply reel

FR2:回收用捲筒 FR2: Reel for recycling

U1~Un:處理裝置 U1~Un: Processing device

U3:曝光裝置(基板處理裝置) U3: Exposure device (substrate processing device)

M,MA:光罩 M, MA: Photomask

AX1:第1軸 AX1: 1st axis

AX2:第2軸 AX2: 2nd axis

P1:光罩之面 P1: The face of the mask

P2:支承面 P2: bearing surface

P7:中間像面 P7: Intermediate image plane

EL1:照明光束 EL1: Lighting beam

EL2:投影光束 EL2: Projection beam

Rm:曲率半徑 Rm: radius of curvature

Rp:曲率半徑 Rp: radius of curvature

CL:中心面 CL: center plane

PBS:偏光分束器 PBS: Polarizing Beam Splitter

IR1~IR6:照明區域 IR1~IR6: Lighting area

IL1~IL6:照明光學系 IL1~IL6: Illumination Optical System

ILM:照明光學模組 ILM: Lighting Optical Module

PA1~PA6:投影區域 PA1~PA6: Projection area

PLM:投影光學模組 PLM: Projection Optical Module

[圖1]係顯示第1實施形態之元件製造系統之構成的圖。 Fig. 1 is a diagram showing the configuration of a device manufacturing system according to the first embodiment.

[圖2]係顯示第1實施形態之曝光裝置(基板處理裝置)之整體構成的圖。 2 is a diagram showing the overall configuration of the exposure apparatus (substrate processing apparatus) according to the first embodiment.

[圖3]係顯示圖2所示之曝光裝置之照明區域及投影區域之配置的圖。 FIG. 3 is a diagram showing the arrangement of the illumination area and the projection area of the exposure apparatus shown in FIG. 2 .

[圖4]係顯示圖2所示之曝光裝置之照明光學系及投影光學系之構成的圖。 FIG. 4 is a diagram showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2 .

[圖5]係誇張顯示在光罩之照明光束及投影光束之狀態的圖。 [FIG. 5] It is a figure which exaggeratedly shows the state of the illumination beam and the projection beam on the mask.

[圖6A]係顯示光罩之圖案之投影像面與基板之曝光面之關係的說明圖。 6A is an explanatory diagram showing the relationship between the projected image surface of the pattern of the mask and the exposure surface of the substrate.

[圖6B]係顯示在曝光寬度內之散焦量之變化之樣子的圖表。 [ FIG. 6B ] It is a graph showing how the defocus amount changes within the exposure width.

[圖7]係顯示第2實施形態之曝光裝置(基板處理裝置)之整體構成的圖。 [ Fig. 7] Fig. 7 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a second embodiment.

[圖8]係顯示光罩之圖案之投影像面與基板之曝光面之關係的說明圖。 8 is an explanatory diagram showing the relationship between the projected image surface of the pattern of the mask and the exposure surface of the substrate.

[圖9]係顯示曝光座標與散焦之關係一例的圖表。 FIG. 9 is a graph showing an example of the relationship between exposure coordinates and defocus.

[圖10]係顯示散焦與點像強度之關係一例的圖表。 FIG. 10 is a graph showing an example of the relationship between defocus and point image intensity.

[圖11]係顯示散焦量之變化與強度差之關係一例的圖表。 11 is a graph showing an example of the relationship between the change in the defocus amount and the intensity difference.

[圖12]係顯示散焦量與L/S之對比變化之關係一例的圖表。 FIG. 12 is a graph showing an example of the relationship between the defocus amount and the L/S contrast change.

[圖13]係顯示散焦量與L/S之對比率變化之關係一例的圖表。 FIG. 13 is a graph showing an example of the relationship between the defocus amount and the change in the contrast ratio of L/S.

[圖14]係顯示散焦量與L/S之CD及截剪位準之關係一例的圖表。 Fig. 14 is a graph showing an example of the relationship between the defocus amount and the CD of L/S and the clipping level.

[圖15]係顯示散焦量與孤立線之對比變化之關係一例的圖表。 FIG. 15 is a graph showing an example of the relationship between the defocus amount and the contrast change of the isolated line.

[圖16]係顯示散焦量與孤立線之對比率變化之關係一例的圖表。 Fig. 16 is a graph showing an example of the relationship between the defocus amount and the change in the contrast ratio of the isolated line.

[圖17]係顯示散焦量與孤立線之CD及截剪位準之關係一例的圖表。 Fig. 17 is a graph showing an example of the relationship between the amount of defocus, the CD of the isolated line, and the clipping level.

[圖18]係顯示第3實施形態之曝光裝置(基板處理裝置)之整體構成的圖。 18 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a third embodiment.

[圖19]係顯示第4實施形態之曝光裝置(基板處理裝置)之整體構成的圖。 19 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment.

[圖20]係顯示光罩之圖案之投影像面與基板之曝光面之關係的說明圖。 20 is an explanatory diagram showing the relationship between the projected image surface of the pattern of the mask and the exposure surface of the substrate.

[圖21]係顯示曝光方法之流程圖。 [Fig. 21] is a flowchart showing the exposure method.

[圖22]係顯示元件製造方法的流程圖。 [FIG. 22] It is a flowchart showing the element manufacturing method.

針對用以實施本發明之形態(實施形態),參照圖面詳細的說明如下。本發明不受限於以下實施形態所記載之內容。又,以下記載之構成要素中,包含發明所屬技術領域中具有通常知識者容易想到者、亦包含實質上相同之物。此外,以下記載之構成要素可適當的加以組合。再者,在不脫離本發明要旨之範圍內可進行構成要素之各種省略、置換或變更。例如,以下實施形態中,雖作為元件係說明製造可撓性顯示器的場合,但不限定於此。作為元件,亦能製造配線基板、半導體基板等。 The form (embodiment) for implementing the present invention will be described in detail below with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. In addition, the constituent elements described below include those with ordinary knowledge in the technical field to which the invention pertains that can easily be conceived, and those that are substantially the same. In addition, the constituent elements described below can be appropriately combined. In addition, various omissions, substitutions, or changes of constituent elements can be made without departing from the gist of the present invention. For example, in the following embodiments, the case where a flexible display is produced as an element is described, but the present invention is not limited to this. As an element, a wiring board, a semiconductor board, and the like can also be produced.

〔第1實施形態〕 [First Embodiment]

第1實施形態之基板處理裝置係對基板施以曝光處理之曝光裝置。又,曝光裝置係組裝在對曝光後之基板施以各種處理以製造元件之元件製造系統。首先,說明元件製造系統。 The substrate processing apparatus of the first embodiment is an exposure apparatus for subjecting a substrate to exposure processing. In addition, the exposure apparatus is a component manufacturing system which performs various processes to the board|substrate after exposure, and manufactures a component. First, the component manufacturing system will be described.

<元件製造系統> <Component Manufacturing System>

圖1係顯示第1實施形態之元件製造系統之構成的圖。圖1所示之元件製造系統1,係製造作為元件之可撓性顯示器之生產線(可撓性顯示器生產線)。作為可撓性顯示器,例如有有機EL顯示器等。此元件製造系統1,係從將可撓性基板P捲繞成捲筒狀之供應用捲筒FR1送出該基板P,並對送出之基板P連續的施以各種處理後,將處理後之基板P作為可撓性元件捲繞於回收用捲筒FR2、所謂之捲對捲(Roll to Roll)方式。第1實施形態之元件製造系統1,係顯示將成薄膜狀片材之基板P從供應用捲筒FR1送出,從供應用捲筒FR1送出之基板P,依序經n台之處理裝置U1、U2、U3、U4、U5、...Un,捲繞至回收用捲筒FR2為止之例。首先,針對作為元件製造系統1之處理對象的基板P加以說明。 FIG. 1 is a diagram showing the configuration of a device manufacturing system according to the first embodiment. The device manufacturing system 1 shown in FIG. 1 is a production line (flexible display production line) for manufacturing a flexible display as a device. As a flexible display, an organic electroluminescent display etc. are mentioned, for example. In this device manufacturing system 1, a flexible substrate P is fed out from a supply reel FR1 for winding the flexible substrate P into a roll shape, and after successively applying various treatments to the fed out substrate P, the processed substrate P is fed out. P is wound around the reel FR2 for recovery as a flexible element, a so-called roll to roll method. The device manufacturing system 1 according to the first embodiment shows that the substrate P formed into a film-like sheet is fed out from the supply roll FR1, and the substrate P fed out from the supply roll FR1 is sequentially passed through n processing apparatuses U1, U2, U3, U4, U5, ...Un, an example of winding up to the recycling reel FR2. First, the board|substrate P which is the process object of the component manufacturing system 1 is demonstrated.

基板P,例如係使用由樹脂薄膜、不鏽鋼等之金屬或合金構成之 箔(foil)等。作為樹脂薄膜之材質,例如包含聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯乙烯共聚物樹脂、聚氯乙烯樹脂、纖維素樹酯、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、乙酸乙烯酯樹脂中之1或2種以上。 As the substrate P, for example, a resin film, stainless steel, or other metal or alloy is used. Foil, etc. As the material of the resin film, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene-ethylene copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, and polycarbonate resin are included. , 1 or more of polystyrene resin and vinyl acetate resin.

基板P,以選擇例如熱膨脹係數顯著較大、而能在對基板P實施之各種處理中因受熱而產生之變形量可實質忽視者較佳。熱膨脹係數,例如,可藉由將無機填充物混入樹脂薄膜中,據以設定為較對應製程溫度等之閾值小。無機填充物,可以是例如,氧化鈦、氧化鋅、氧化鋁、氧化矽等。又,基板P可以是以浮製法等製造之厚度100μm程度之極薄玻璃之單層體、或於此極薄玻璃貼合上述樹脂薄膜、箔等之積層體。 For the substrate P, it is preferable to select, for example, the thermal expansion coefficient is significantly larger, and the amount of deformation caused by heat in various processes performed on the substrate P can be substantially ignored. The thermal expansion coefficient, for example, can be set to be smaller than a threshold value corresponding to the process temperature by mixing an inorganic filler into the resin film. The inorganic filler can be, for example, titanium oxide, zinc oxide, aluminum oxide, silicon oxide, and the like. In addition, the substrate P may be a single-layer body of an ultra-thin glass having a thickness of about 100 μm produced by a float method or the like, or a laminate in which the above-mentioned resin film, foil, etc. are bonded to the ultra-thin glass.

以此方式構成之基板P,被捲繞成捲筒狀而成為供應用捲筒FR1,此供應用捲筒FR1被裝著於元件製造系統1。裝有供應用捲筒FR1之元件製造系統1,對從供應用捲筒FR1送出之基板P反覆實施用以製造1個元件之各種處理。因此,處理後之基板P成為複數個元件連結之狀態。也就是說,從供應用捲筒FR1送出之基板P,為擷取多面用之基板。此外,基板P亦可以是藉由預先之既定前處理,將其表面予以改質而活性化者、或以刻印法等於表面形成用以精密圖案化之微細間隔壁構造(凹凸構造)者。 The board|substrate P comprised in this way is wound into the roll shape, and becomes roll FR1 for supply, and this roll FR1 for supply is mounted in the component manufacturing system 1. The component manufacturing system 1 equipped with the reel FR1 for supply repeats various processes for manufacturing one component with respect to the board|substrate P sent out from reel FR1 for supply. Therefore, the processed board|substrate P becomes the state which several elements were connected. That is, the board|substrate P sent out from the reel FR1 for supply is a board|substrate for picking up multiple surfaces. In addition, the substrate P may be activated by modifying the surface thereof by a predetermined pretreatment in advance, or a fine partition structure (concave-convex structure) for precise patterning may be formed on the surface by an engraving method.

處理後之基板P,被捲繞成捲筒狀作為回收用捲筒FR2加以回收。回收用捲筒FR2,被安裝於未圖示之切割裝置。裝有回收用捲筒FR2之切割裝置,將處理後之基板P分割(切割)成各個元件,據以成複數個元件。基板P之尺寸,例如,寬度方向(短邊之方向)之尺寸為10cm~2m程度、而長度方向(長條之方向)尺寸則為10m以上。當然,基板P之尺寸不限於上述尺寸。 The processed board|substrate P is wound up in a roll shape, and is collect|recovered as the roll FR2 for collection|recovery. The recycling reel FR2 is attached to a cutting device not shown. The dicing apparatus equipped with the reel FR2 for recovery divides (cuts) the processed board|substrate P into each element, and becomes a plurality of elements accordingly. The dimension of the board|substrate P, for example, the dimension of the width direction (direction of a short side) is about 10cm - 2m, and the dimension of the length direction (direction of a long strip) is 10m or more. Of course, the size of the substrate P is not limited to the above-mentioned size.

其次,參照圖1說明元件製造系統1。圖1中,X方向、Y方向及Z方向成一正交之正交座標系。X方向係在水平面內連結供應用捲筒FR1及回收用捲筒FR2之方向,為圖1中之左右方向。Y方向係在水平面內與X方向正交之方 向,為圖1中之前後方向。Y方向係供應用捲筒FR1及回收用捲筒FR2之軸方向。Z方向係鉛直方向,係圖1中之上下方向。 Next, the component manufacturing system 1 will be described with reference to FIG. 1 . In FIG. 1 , the X direction, the Y direction and the Z direction form an orthogonal coordinate system. The X direction is a direction in which the supply roll FR1 and the recovery roll FR2 are connected in a horizontal plane, and is the left-right direction in FIG. 1 . The Y direction is perpendicular to the X direction in the horizontal plane direction, which is the front and rear direction in Figure 1. The Y direction is the axial direction of the supply roll FR1 and the recovery roll FR2. The Z direction is the vertical direction, which is the up-down direction in FIG. 1 .

元件製造系統1,具備供應基板P之基板供應裝置2、對由基板供應裝置2供應之基板P施以各種處理之處理裝置U1~Un、回收經處理裝置U1~Un施以處理之基板P之基板回收裝置4、以及控制元件製造系統1之各裝置之上位控制裝置5。 The component manufacturing system 1 includes a substrate supply apparatus 2 for supplying the substrate P, processing apparatuses U1 to Un for applying various treatments to the substrates P supplied by the substrate supply apparatus 2, and a processing apparatus for recovering the substrates P processed by the processing apparatuses U1 to Un. The substrate recovery device 4 and the upper-level control device 5 for each device of the control element manufacturing system 1 are provided.

於基板供應裝置2,以可旋轉之方式安裝供應用捲筒FR1。基板供應裝置2,具有從所安裝之供應用捲筒FR1送出基板P的驅動輥R1、與調整基板P在寬度方向(Y方向)之位置的邊緣位置控制器EPC1。驅動輥R1,一邊夾持基板P之表背兩面一邊旋轉,將基板P從供應用捲筒FR1往朝向回收用捲筒FR2之搬送方向送出,據以將基板P供應至處理裝置U1~Un。此時,邊緣位置控制器EPC1係以基板P在寬度方向端部(邊緣)之位置,相對目標位置在±十數μm至數十μm程度之範圍內之方式,使基板P移動於寬度方向,以修正基板P在寬度方向之位置。 The supply roll FR1 is rotatably attached to the substrate supply device 2 . The board|substrate supply apparatus 2 has the drive roller R1 which sends out the board|substrate P from the roll FR1 for supply mounted, and the edge position controller EPC1 which adjusts the position of the board|substrate P in the width direction (Y direction). The driving roller R1 rotates while sandwiching the front and back surfaces of the substrate P, and feeds the substrate P from the supply roll FR1 to the conveying direction toward the recovery roll FR2, thereby supplying the substrate P to the processing apparatuses U1 to Un. At this time, the edge position controller EPC1 moves the substrate P in the width direction so that the position of the end portion (edge) of the substrate P in the width direction relative to the target position is within a range of ± tens of μm to several tens of μm. To correct the position of the substrate P in the width direction.

於基板回收裝置4,以可旋轉之方式裝有回收用捲筒FR2。基板回收裝置4,具有將處理後之基板P拉向回收用捲筒FR2側的驅動輥R2、與調整基板P在寬度方向(Y方向)之位置的邊緣位置控制器EPC2。基板回收裝置4,一邊以驅動輥R2夾持基板P之表背兩面一邊旋轉,將基板P拉向搬送方向,並藉由使回收用捲筒FR2旋轉,據以捲繞基板P。此時,邊緣位置控制器EPC2與邊緣位置控制器EPC1同樣構成,修正基板P在寬度方向之位置,以避免基板P之寬度方向端部(邊緣)在寬度方向產生不均。 The substrate recovery device 4 is rotatably mounted with a recovery roll FR2. The board|substrate collection|recovery apparatus 4 has the drive roller R2 which draws the processed board|substrate P to the roll FR2 side for collection|recovery, and the edge position controller EPC2 which adjusts the position of the board|substrate P in the width direction (Y direction). The substrate recovery device 4 rotates while sandwiching the front and back surfaces of the substrate P with the drive rollers R2, and pulls the substrate P in the conveyance direction, and winds the substrate P by rotating the recovery roll FR2. At this time, the edge position controller EPC2 has the same configuration as the edge position controller EPC1, and corrects the position of the substrate P in the width direction so as to avoid unevenness in the width direction end (edge) of the substrate P in the width direction.

處理裝置U1,係在從基板供應裝置2供應之基板P表面塗布感光性機能液之塗布裝置。作為感光性機能液,例如係使用光阻劑、感光性矽烷耦合材(親撥液性改質材)、感光性鍍敷還原材、UV硬化樹脂液等。處理裝置U1, 從基板P之搬送方向上游側起,依序設有塗布機構Gp1與乾燥機構Gp2。塗布機構Gp1,具有捲繞基板P之壓輥DR1、與和壓輥DR1對向之塗布輥DR2。塗布機構Gp1在將所供應之基板P捲繞於壓輥DR1之狀態下,以壓輥DR1及塗布輥DR2夾持基板P。接著,塗布機構Gp1藉由使壓輥DR1及塗布輥DR2旋轉,一邊使基板P移動於搬送方向、一邊以塗布輥DR2塗布感光性機能液。乾燥機構Gp2吹出熱風或乾燥空氣等之乾燥用空氣以除去感光性機能液中所含之溶質(溶劑或水),使塗有感光性機能液之基板P乾燥,以在基板P上形成感光性機能層。 The processing device U1 is a coating device for coating the surface of the substrate P supplied from the substrate supply device 2 with the photosensitive functional liquid. As the photosensitive functional liquid, for example, a photoresist, a photosensitive silane coupling material (a liquid repellent modified material), a photosensitive plating reducing material, a UV curable resin liquid, and the like are used. processing unit U1, The coating mechanism Gp1 and the drying mechanism Gp2 are provided in this order from the upstream side of the conveyance direction of the board|substrate P. The coating mechanism Gp1 includes a pressing roll DR1 for winding the substrate P, and a coating roll DR2 facing the pressing roll DR1. The coating mechanism Gp1 sandwiches the substrate P between the press roller DR1 and the coating roller DR2 in a state in which the supplied substrate P is wound around the press roller DR1. Next, the coating mechanism Gp1 coats the photosensitive functional liquid with the coating roller DR2 while moving the substrate P in the conveyance direction by rotating the pressing roller DR1 and the coating roller DR2. The drying mechanism Gp2 blows out hot air or drying air for drying air to remove the solute (solvent or water) contained in the photosensitive functional liquid, and dries the substrate P coated with the photosensitive functional liquid, so as to form photosensitivity on the substrate P functional layer.

處理裝置U2,係為了使形成在基板P表面之感光性機能層安定,而將從處理裝置U1搬送之基板P加熱至既定温度(例如,數10~120℃程度)之加熱裝置。處理裝置U2,從基板P之搬送方向上游側起依序設有加熱室HA1與冷卻室HA2。加熱室HA1,於其內部設有複數個輥及複數個空氣翻轉桿(air turn bar),複數個輥及複數個空氣翻轉桿構成基板P之搬送路徑。複數個輥以滾接於基板P背面之方式設置,複數個空氣翻轉桿以非接觸狀態設於基板P之表面側。複數個輥及複數個空氣翻轉桿為加長基板P之搬送路徑,而呈蛇行狀之搬送路徑。通過加熱室HA1內之基板P,一邊沿蛇行狀之搬送路徑被搬送、一邊被加熱至既定温度。冷卻室HA2,為使在加熱室HA1加熱之基板P之温度與後製程(處理裝置U3)之環境温度一致,而將基板P冷卻至環境温度。冷卻室HA2,其內部設有複數個輥,複數個輥,與加熱室HA1同樣的,為加長基板P之搬送路徑而呈蛇行狀搬送路徑之配置。通過冷卻室HA2內之基板P,一邊沿蛇行狀之搬送路徑被搬送一邊被冷卻。於冷卻室HA2之搬送方向下游側設有驅動輥R3,驅動輥R3一邊夾持通過冷卻室HA2之基板P一邊旋轉,據以將基板P供應向處理裝置U3。此外,加熱室HA1對基板P之加熱,在基板P為PET(聚對苯二甲酸乙二酯)或PEN(聚2,6萘二甲酸乙二酯)等樹脂膜之場合,可設定為不超過其玻璃轉移溫度。 The processing apparatus U2 is a heating apparatus for heating the substrate P conveyed from the processing apparatus U1 to a predetermined temperature (for example, about several 10 to 120° C.) in order to stabilize the photosensitive functional layer formed on the surface of the substrate P. The processing apparatus U2 is provided with the heating chamber HA1 and the cooling chamber HA2 in this order from the upstream side of the conveyance direction of the board|substrate P. The heating chamber HA1 is provided with a plurality of rollers and a plurality of air turn bars inside, and the plurality of rollers and the plurality of air turn bars constitute a conveyance path of the substrate P. As shown in FIG. A plurality of rollers are provided so as to be rolled on the back surface of the substrate P, and a plurality of air turning rods are provided on the surface side of the substrate P in a non-contact state. A plurality of rollers and a plurality of air reversing rods are the conveyance paths of the elongated substrate P, and are meandering conveyance paths. The substrate P in the heating chamber HA1 is heated to a predetermined temperature while being conveyed along the meandering conveyance path. The cooling chamber HA2 cools the substrate P to the ambient temperature so that the temperature of the substrate P heated in the heating chamber HA1 is consistent with the ambient temperature of the post-process (processing device U3). The cooling chamber HA2 is provided with a plurality of rollers inside, and the plurality of rollers are arranged in a meandering conveyance path in order to lengthen the conveyance path of the substrate P as in the heating chamber HA1. The substrate P passing through the cooling chamber HA2 is cooled while being conveyed along the meandering conveyance path. A drive roller R3 is provided on the downstream side in the conveyance direction of the cooling chamber HA2, and the drive roller R3 rotates while sandwiching the substrate P passing through the cooling chamber HA2, thereby supplying the substrate P to the processing apparatus U3. In addition, the heating of the substrate P by the heating chamber HA1 can be set to be disabled when the substrate P is a resin film such as PET (polyethylene terephthalate) or PEN (polyethylene 2,6 naphthalate). exceeds its glass transition temperature.

處理裝置(基板處理裝置)U3,係對從處理裝置U2供應、表面 形成有感光性機能層之基板(感光基板)P,投影曝光顯示器用電路或配線等圖案之曝光裝置。詳細將留待後敘,處理裝置U3以照明光束照明反射型之光罩M,將藉由照明光束被光罩M反射所得之投影光束投影曝光於基板P。處理裝置U3,具有將從處理裝置U2供應之基板P送往搬送方向下游側的驅動輥R4、與調整基板P在寬度方向(Y方向)之位置的邊緣位置控制器EPC3。驅動輥R4藉由在夾持基板P之表背兩面之同時進行旋轉,將基板P送向搬送方向下游側,據以將基板P朝在曝光位置支承之基板支承捲筒(旋轉捲筒(亦稱旋轉捲筒)供應。 The processing apparatus (substrate processing apparatus) U3 is supplied from the processing apparatus U2, the surface A substrate (photosensitive substrate) P on which a photosensitive functional layer is formed, and an exposure apparatus for projecting and exposing patterns such as circuits and wirings for displays. The details will be described later. The processing device U3 illuminates the reflective mask M with the illumination beam, and projects and exposes the projection beam obtained by the illumination beam reflected by the mask M on the substrate P. The processing apparatus U3 has the drive roller R4 which sends the board|substrate P supplied from the processing apparatus U2 to the downstream side of a conveyance direction, and the edge position controller EPC3 which adjusts the position of the board|substrate P in the width direction (Y direction). The driving roller R4 rotates while pinching the front and back surfaces of the substrate P to send the substrate P to the downstream side in the conveying direction, thereby directing the substrate P to the substrate support roll (rotating roll (also a rotary roll) supported at the exposure position. called rotating reels) supply.

邊緣位置控制器EPC3與邊緣位置控制器EPC1同樣構成,修正基板P在寬度方向之位置,以使在曝光位置(基板支承捲筒)之基板P之寬度方向成為目標位置。又,處理裝置U3具有在對曝光後基板P賦予鬆弛之狀態下,將基板P送往搬送方向下游側之2組驅動輥R5、R6。2組驅動輥R5、R6在基板P之搬送方向隔著既定間隔配置。驅動輥R5夾持搬送之基板P之上游側旋轉、驅動輥R6夾持搬送之基板P之下游側旋轉,據以將基板P供應向處理裝置U4。此時,由於基板P已被賦予鬆弛,因此能吸收在較驅動輥R6位於搬送方向下游側所產生之搬送速度之變動,能切斷搬送速度之變動對基板P之曝光處理之影響。此外,於處理裝置U3內設有為進行光罩M之光罩圖案之一部分之像與基板P之相對位置對準(alignment)而檢測預先形成在基板P之對準標記等之對準顯微鏡AM1、AM2。 The edge position controller EPC3 has the same configuration as the edge position controller EPC1, and corrects the position of the substrate P in the width direction so that the width direction of the substrate P at the exposure position (substrate support roll) becomes the target position. In addition, the processing apparatus U3 has two sets of drive rollers R5 and R6 for conveying the substrate P to the downstream side in the conveyance direction in a state where slack is given to the substrate P after exposure. The two sets of drive rollers R5 and R6 are spaced apart in the conveyance direction of the substrate P. configured at a predetermined interval. The driving roller R5 rotates the upstream side of the conveyed substrate P, and the driving roller R6 rotates the downstream side of the conveyed substrate P, so that the substrate P is supplied to the processing apparatus U4. At this time, since the substrate P is given slack, the fluctuation of the conveyance speed generated on the downstream side of the drive roller R6 in the conveyance direction can be absorbed, and the influence of the fluctuation of the conveyance speed on the exposure process of the substrate P can be cut off. In addition, the processing apparatus U3 is provided with an alignment microscope AM1 that detects alignment marks and the like formed in advance on the substrate P in order to perform alignment of a portion of the mask pattern of the mask M and the relative position of the substrate P. , AM2.

處理裝置U4,係對從處理裝置U3搬送而來之曝光後之基板P,進行濕式之顯影處理、無電電鍍處理等之濕式處理裝置。處理裝置U4,於其內部具有於鉛直方向(Z方向)階段化之3個處理槽BT1、BT2、BT3、與搬送基板P之複數個輥。複數個輥係以基板P依序通過3個處理槽BT1、BT2、BT3內部之搬送路徑的方式配置。於處理槽BT3之搬送方向下游側設有驅動輥R7,驅動輥R7藉由一邊夾持通過處理槽BT3後之基板P一邊旋轉,據以將基板P供應向處理裝置U5。 The processing apparatus U4 is a wet processing apparatus which performs a wet developing process, an electroless plating process, etc. with respect to the exposed board|substrate P conveyed from the processing apparatus U3. The processing apparatus U4 has three processing tanks BT1, BT2, BT3 which are staged in the vertical direction (Z direction), and a plurality of rollers for conveying the substrate P in the inside. The plurality of rollers are arranged so that the substrate P passes through the conveyance paths inside the three processing tanks BT1, BT2, and BT3 in this order. A drive roller R7 is provided on the downstream side in the conveyance direction of the processing tank BT3, and the driving roller R7 supplies the substrate P to the processing apparatus U5 by rotating while pinching the substrate P having passed through the processing tank BT3.

雖省略圖示,但處理裝置U5係使從處理裝置U4搬送而來之基板P乾燥的乾燥裝置。處理裝置U5,將在處理裝置U4濕式處理而附著於基板P之液滴或霧滴(MIST)除去,且將基板P之水分含有量調整成既定之水分含有量。由處理裝置U5加以乾燥之基板P,經由若干個處理裝置後被搬送至處理裝置Un。在以處理裝置Un加以處理後,基板P即被捲繞於基板回收裝置4之回收用捲筒FR2。 Although illustration is abbreviate|omitted, the processing apparatus U5 is a drying apparatus which dries the board|substrate P conveyed from the processing apparatus U4. The processing apparatus U5 removes the droplets or mist droplets (MIST) adhering to the substrate P by wet processing in the processing apparatus U4, and adjusts the moisture content of the substrate P to a predetermined moisture content. The substrate P dried by the processing apparatus U5 is conveyed to the processing apparatus Un after passing through a plurality of processing apparatuses. After being processed by the processing apparatus Un, the board|substrate P is wound on the reel FR2 for collection|recovery of the board|substrate collection apparatus 4.

上位控制裝置5,統籌控制基板供應裝置2、基板回收裝置4及複數個處理裝置U1~Un。上位控制裝置5控制基板供應裝置2及基板回收裝置4,將基板P從基板供應裝置2搬送向基板回收裝置4。又,上位控制裝置5,與基板P之搬送同步,控制複數個處理裝置U1~Un,以實施對基板P之各種處理。 The upper control device 5 overall controls the substrate supply device 2 , the substrate recovery device 4 and the plurality of processing devices U1 to Un. The upper control device 5 controls the substrate supply device 2 and the substrate recovery device 4 to transfer the substrate P from the substrate supply device 2 to the substrate recovery device 4 . In addition, the upper control device 5 controls the plurality of processing devices U1 to Un in synchronization with the conveyance of the substrate P, and performs various processes on the substrate P. As shown in FIG.

<曝光裝置(基板處理裝置)> <Exposure apparatus (substrate processing apparatus)>

其次,針對作為第1實施形態之處理裝置U3之曝光裝置(基板處理裝置)之構成,參照圖2至圖4加以說明。圖2係顯示第1實施形態之曝光裝置(基板處理裝置)之整體構成的圖。圖3係顯示圖2所示曝光裝置之照明區域及投影區域之配置的圖。圖4係顯示圖2所示之曝光裝置之照明光學系及投影光學系之構成的圖。以下將處理裝置U3稱為曝光裝置U3。 Next, the structure of the exposure apparatus (substrate processing apparatus) which is the processing apparatus U3 of 1st Embodiment is demonstrated with reference to FIGS. 2-4. FIG. 2 is a diagram showing the overall configuration of the exposure apparatus (substrate processing apparatus) according to the first embodiment. FIG. 3 is a diagram showing the arrangement of the illumination area and the projection area of the exposure apparatus shown in FIG. 2 . FIG. 4 is a diagram showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2 . The processing apparatus U3 is hereinafter referred to as the exposure apparatus U3.

圖2所示之曝光裝置U3係所謂的掃描曝光裝置,一邊將基板P往搬送方向(掃描方向)搬送、一邊將形成在圓筒狀光罩M之外周面之光罩圖案之像,投影曝光至基板P表面。又,圖2中係X方向、Y方向及Z方向正交之正交座標系,與圖1為同樣之正交座標系。 The exposure apparatus U3 shown in FIG. 2 is a so-called scanning exposure apparatus, which projects and exposes the image of the mask pattern formed on the outer peripheral surface of the cylindrical mask M while conveying the substrate P in the conveying direction (scanning direction). to the surface of the substrate P. Moreover, the orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal in FIG. 2 is the same orthogonal coordinate system as that in FIG. 1 .

首先,說明用於曝光裝置U3之光罩M。光罩M係例如使用金屬製圓筒體之反射型光罩。光罩M係形成為具有以延伸於Y方向之第1軸AX1為中心之曲率半徑Rm之外周面(圓周面)的圓筒體,於徑方向具有一定厚度。光罩M之圓周面係形成有既定光罩圖案之面P1。光罩M之面P1,包含將光束以高效率反射於既定方向之高反射部、與於既定方向不反射光束或以低效率反射之反射 抑制部。光罩圖案以高反射部及反射抑制部形成。因此,反射抑制部亦可吸收光,亦可透射,亦可往既定方向以外反射(例如散射)。此處之光罩M,能將反射抑制部以吸收光之材料或使光透射之材料構成。曝光裝置U3能使用以金屬之圓筒體作成之光罩作為上述構成之光罩M。因此,曝光裝置U3能使用廉價之光罩來進行曝光。 First, the mask M used for the exposure apparatus U3 is demonstrated. The mask M is a reflection type mask using, for example, a metal cylindrical body. The mask M is formed as a cylindrical body having an outer peripheral surface (circumferential surface) with a curvature radius Rm centering on the first axis AX1 extending in the Y direction, and has a constant thickness in the radial direction. The circumferential surface of the mask M is a surface P1 on which a predetermined mask pattern is formed. The surface P1 of the mask M includes a high reflection part that reflects the light beam in a predetermined direction with high efficiency, and a reflection that does not reflect the light beam in the predetermined direction or reflects with low efficiency Suppression Department. The mask pattern is formed with a high reflection part and a reflection suppression part. Therefore, the reflection suppressing portion may absorb light, transmit light, or reflect (eg, scatter) in a direction other than a predetermined direction. In the photomask M here, the reflection suppressing portion can be composed of a material that absorbs light or a material that transmits light. The exposure apparatus U3 can use a mask made of a metal cylindrical body as the mask M of the above-mentioned configuration. Therefore, the exposure device U3 can use an inexpensive mask for exposure.

此外,光罩M可以是形成有對應1個顯示元件之面板用圖案之全體或一部分、亦可以是形成有對應複數個顯示元件之面板用圖案。又,光罩M可以是在繞第1軸AX1之周方向反覆形成複數個面板用圖案、亦可以是小型的面板用圖案在與第1軸AX1平行之方向反覆形成複數個。再者,於光罩M,亦可以是形成有第1顯示元件之面板用圖案與和第1顯示元件尺寸等不同之第2顯示元件之面板用圖案。又,光罩M只要是具有以第1軸AX1為中心之曲率半徑Rm之圓周面即可,並不限定於圓筒體之形狀。例如,光罩M可以是具有圓周面之圓弧狀板材。此外,光罩M可以是薄板狀、亦可以是使薄板狀光罩M彎曲而以順著圓周面之方式貼附於圓筒構件。 In addition, the mask M may be formed with all or a part of the panel pattern corresponding to one display element, or may be formed with a panel pattern corresponding to a plurality of display elements. Moreover, in the mask M, a plurality of panel patterns may be repeatedly formed in the circumferential direction around the first axis AX1, or a plurality of small panel patterns may be repeatedly formed in a direction parallel to the first axis AX1. In addition, the mask M may be formed with a pattern for a panel of the first display element and a pattern for a panel of a second display element having a different size and the like from the first display element. In addition, the mask M is not limited to the shape of a cylindrical body as long as it is a circumferential surface having a radius of curvature Rm around the first axis AX1. For example, the mask M may be an arc-shaped plate having a circumferential surface. In addition, the mask M may be in a thin plate shape, or may be attached to the cylindrical member so as to follow the circumferential surface by bending the thin plate mask M.

其次,說明圖2所示之曝光裝置U3。曝光裝置U3,除上述驅動輥R4~R6、邊緣位置控制器EPC3及對準顯微鏡AM1、AM2之外,亦具有光罩保持機構11、基板支承機構12、照明光學系IL、投影光學系PL、以及下位控制裝置16。曝光裝置U3,藉由將從光源裝置13射出之照明光透過照明光學系IL及投影光學系PL來導引,而將光罩保持機構11所保持之光罩M之圖案之光束投射至以基板支承機構12保持之基板P。 Next, the exposure apparatus U3 shown in FIG. 2 is demonstrated. The exposure apparatus U3 has, in addition to the above-mentioned drive rollers R4 to R6, edge position controller EPC3, and alignment microscopes AM1 and AM2, a mask holding mechanism 11, a substrate support mechanism 12, an illumination optical system IL, a projection optical system PL, and the lower control device 16 . The exposure device U3 projects the light beam of the pattern of the mask M held by the mask holding mechanism 11 to the substrate by guiding the illumination light emitted from the light source device 13 through the illumination optical system IL and the projection optical system PL. The substrate P is held by the support mechanism 12 .

下位控制裝置16控制曝光裝置U3之各部,使各部實施處理。下位控制裝置16可以是元件製造系統1之上位控制裝置5之一部分或全部。又,下位控制裝置16亦可以是受上位控制裝置5控制、與上位控制裝置5不同之另一裝置。下位控制裝置16,例如包含電腦。 The lower control apparatus 16 controls each part of exposure apparatus U3, and makes each part perform a process. The lower control device 16 may be a part or all of the upper control device 5 of the component manufacturing system 1 . In addition, the lower control device 16 may be another device that is controlled by the upper control device 5 and different from the upper control device 5 . The lower control device 16 includes, for example, a computer.

光罩保持機構11,具有保持光罩M之光罩保持圓筒(光罩保持構件)21、與使光罩保持圓筒21旋轉之第1驅動部22。光罩保持圓筒21將光罩M保持成以光罩M之第1軸AX1為旋轉中心。第1驅動部22連接於下位控制裝置16,以第1軸AX1為旋轉中心使光罩保持圓筒21旋轉。 The mask holding mechanism 11 includes a mask holding cylinder (mask holding member) 21 that holds the mask M, and a first drive unit 22 that rotates the mask holding cylinder 21 . The mask holding cylinder 21 holds the mask M with the first axis AX1 of the mask M as the center of rotation. The 1st drive part 22 is connected to the lower control apparatus 16, and rotates the mask holding cylinder 21 about the 1st axis|shaft AX1 as a rotation center.

此外,光罩保持機構11雖係以光罩保持圓筒21保持圓筒體之光罩M,但不限於此構成。光罩保持機構11亦可順著光罩保持圓筒21之外周面將薄板狀之光罩M捲繞保持。此外,光罩保持機構11,亦可將圓弧狀板材之光罩M可拆裝地保持於光罩保持圓筒21之外周面。 In addition, although the mask holding mechanism 11 uses the mask holding cylinder 21 to hold the mask M of the cylinder, it is not limited to this configuration. The mask holding mechanism 11 can also wrap and hold the thin-plate mask M along the outer peripheral surface of the mask holding cylinder 21 . In addition, the mask holding mechanism 11 can also detachably hold the mask M of the arc-shaped plate material on the outer peripheral surface of the mask holding cylinder 21 .

基板支承機構12,具有以圓筒狀之外周面支承基板P並能旋轉之基板支承圓筒25、使基板支承圓筒25旋轉之第2驅動部26、一對空氣翻轉桿(air turn bar)ATB1、ATB2、以及一對導輥27、28。基板支承圓筒25係形成為具有以延伸於Y方向之第2軸AX2為中心之曲率半徑Rp之外周面(圓周面)的圓筒形狀。此處,第1軸AX1與第2軸AX2彼此平行,並以通過第1軸AX1及第2軸AX2之面為中心面CL。基板支承圓筒25之圓周面之一部分為支承基板P之支承面P2。也就是說,基板支承圓筒25係藉由將基板P捲繞於其支承面P2,據以支承基板P。第2驅動部26連接於下位控制裝置16,以第2軸AX2為旋轉中心使基板支承圓筒25旋轉。 The substrate support mechanism 12 includes a substrate support cylinder 25 rotatably supporting the substrate P with a cylindrical outer peripheral surface, a second drive unit 26 for rotating the substrate support cylinder 25, and a pair of air turn bars ATB1, ATB2, and a pair of guide rollers 27,28. The board|substrate support cylinder 25 is formed in the cylindrical shape which has the outer peripheral surface (circumferential surface) of the curvature radius Rp centering on the 2nd axis|shaft AX2 extended in the Y direction. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and the center plane CL is a plane passing through the first axis AX1 and the second axis AX2. A part of the circumferential surface of the substrate supporting cylinder 25 is a supporting surface P2 for supporting the substrate P. That is, the board|substrate support cylinder 25 supports the board|substrate P by winding the board|substrate P on the support surface P2. The second drive unit 26 is connected to the lower control device 16, and rotates the substrate support cylinder 25 about the second axis AX2 as the center of rotation.

一對空氣翻轉桿ATB1、ATB2隔著基板支承圓筒25,分別設在基板P之搬送方向上游側及下游側。一對空氣翻轉桿ATB1、ATB2,設於基板P之表面側,在鉛直方向(Z方向)中配置於較基板支承圓筒25之支承面P2更下方側。一對導輥27、28,隔著一對空氣翻轉桿ATB1、ATB2,分別設在基板P之搬送方向上游側及下游側。一對導輥27、28,其一方之導輥27將從驅動輥R4搬送而來之基板P導引至空氣翻轉桿ATB1,另一方之導輥28將從空氣翻轉桿ATB2搬送而來之基板P導引至驅動輥R5。 The pair of air inversion bars ATB1 and ATB2 are provided on the upstream side and the downstream side in the conveyance direction of the substrate P, respectively, with the substrate support cylinder 25 interposed therebetween. The pair of air turning bars ATB1 and ATB2 are provided on the surface side of the substrate P, and are arranged on the lower side than the support surface P2 of the substrate support cylinder 25 in the vertical direction (Z direction). The pair of guide rollers 27 and 28 are provided on the upstream side and the downstream side in the conveyance direction of the substrate P, respectively, with the pair of air turning bars ATB1 and ATB2 interposed therebetween. A pair of guide rollers 27, 28, one guide roller 27 guides the substrate P conveyed from the drive roller R4 to the air turning bar ATB1, and the other guide roller 28 guides the substrate conveyed from the air turning bar ATB2 P is guided to the drive roller R5.

承上所述,基板支承機構12將從驅動輥R4搬送而來之基板P,以導輥27引導至空氣翻轉桿ATB1,將通過空氣翻轉桿ATB1之基板P導入基板支承圓筒25。基板支承機構12,以第2驅動部26使基板支承圓筒25旋轉,據以將導入基板支承圓筒25之基板P一邊以基板支承圓筒25之支承面P2加以支承、一邊搬送向空氣翻轉桿ATB2。基板支承機構12,將被搬送至空氣翻轉桿ATB2之基板P以空氣翻轉桿ATB2引導至導輥28,將通過導輥28之基板P引導至驅動輥R5。 As described above, the substrate support mechanism 12 guides the substrate P conveyed from the drive roller R4 to the air inversion bar ATB1 by the guide roller 27 , and guides the substrate P passing through the air inversion bar ATB1 into the substrate support cylinder 25 . The substrate support mechanism 12 rotates the substrate support cylinder 25 by the second drive unit 26 , thereby conveying the substrate P introduced into the substrate support cylinder 25 to the air while being supported by the support surface P2 of the substrate support cylinder 25 Rod ATB2. The board|substrate support mechanism 12 guides the board|substrate P conveyed to the air inversion bar ATB2 to the guide roller 28 by the air inversion bar ATB2, and guides the board|substrate P which passed the guide roller 28 to the drive roller R5.

此時,連接於第1驅動部22及第2驅動部26之下位控制裝置16,使光罩保持圓筒21與基板支承圓筒25以既定旋轉速度比同步旋轉,將形成在光罩M之面P1之光罩圖案之像,連續的反覆投影曝光於捲繞在基板支承圓筒25之支承面P2之基板P表面(順著圓周面彎曲之面)。 At this time, the lower control device 16 is connected to the first driving part 22 and the second driving part 26, so that the mask holding cylinder 21 and the substrate supporting cylinder 25 are rotated synchronously at a predetermined rotation speed ratio, and the mask M is formed on the The image of the mask pattern on the surface P1 is continuously and repeatedly projected and exposed on the surface of the substrate P (the surface curved along the circumferential surface) wound on the support surface P2 of the substrate support cylinder 25 .

光源裝置13,射出照明於光罩M之照明光束EL1。光源裝置13具有光源31與導光構件32。光源31係射出既定波長之光源。光源31可利用例如水銀燈等燈光源或雷射二極體、發光二極體(LED)等。光源31所射出之照明光係例如從燈光源射出之輝線(g線、h線、i線等)、KrF準分子雷射光(波長248nm)等遠紫外光(DUV光)、ArF準分子雷射光(波長193nm)等。此處之光源31最好係射出包含i線(365nm之波長)以下之波長之照明光束EL1。作為產生i線以下之波長之照明光束EL1的光源31,能使用從YAG雷射(第3諧波雷射)射出之雷射光(355nm之波長)、從YAG雷射(第4諧波雷射)射出之雷射光(266nm之波長)、或從KrF準分子雷射射出之雷射光(248nm之波長)等。 The light source device 13 emits the illumination light beam EL1 for illuminating the mask M. The light source device 13 includes a light source 31 and a light guide member 32 . The light source 31 is a light source emitting a predetermined wavelength. The light source 31 may use a light source such as a mercury lamp, or a laser diode, a light emitting diode (LED), or the like. The illuminating light emitted by the light source 31 is, for example, a glow line (g-line, h-line, i-line, etc.) emitted from the light source, far-ultraviolet light (DUV light) such as KrF excimer laser light (wavelength: 248 nm), ArF excimer laser light (wavelength 193nm) and so on. The light source 31 here preferably emits an illumination light beam EL1 having a wavelength below the i-line (wavelength of 365 nm). As the light source 31 for generating the illumination light beam EL1 with the wavelength below the i-line, laser light (wavelength of 355 nm) emitted from a YAG laser (third harmonic laser), laser light (wavelength of 355 nm) from a YAG laser (fourth harmonic laser), ) emitted laser light (wavelength of 266nm), or laser light emitted from KrF excimer laser (wavelength of 248nm), etc.

導光構件32將從光源31射出之照明光束EL1導至照明光學系IL。導光構件32係以使用光纖或反射鏡之中繼模組等構成。又,導光構件32,在照明光學系IL設有複數個之情形時,係將來自光源31之照明光束EL1分離為複數條後,將複數條照明光束EL1導向複數個照明光學系IL。又,導光構件32,本實施形態之導光構件32,係使從光源31射出之照明光束EL1成為既定偏光狀態之 光而射入偏光分束器PBS。本實施形態之偏光分束器PBS反射作為S偏光之直線偏光之光束,使作為P偏光之直線偏光之光束透射。因此,光源裝置13係射出射入偏光分束器PBS之照明光束EL1成為直線偏光(S偏光)之照明光束EL1。 The light guide member 32 guides the illumination light beam EL1 emitted from the light source 31 to the illumination optical system IL. The light guide member 32 is constituted by a relay module or the like using an optical fiber or a mirror. The light guide member 32 divides the illumination light beam EL1 from the light source 31 into a plurality of pieces, and guides the plurality of illumination light beams EL1 to the plurality of illumination optical systems IL when a plurality of illumination optical systems IL are provided. In addition, the light guide member 32, the light guide member 32 of the present embodiment, is a device for making the illumination light beam EL1 emitted from the light source 31 into a predetermined polarization state. The light enters the polarization beam splitter PBS. The polarizing beam splitter PBS of the present embodiment reflects the linearly polarized light beam as S-polarized light, and transmits the linearly polarized light beam as P-polarized light. Therefore, the light source device 13 emits the illumination light beam EL1 entering the polarization beam splitter PBS as the illumination light beam EL1 of linear polarization (S polarization).

光源裝置13對偏光分束器PBS射出波長及相位一致之偏光雷射。例如,光源裝置13在從光源31射出之光束為偏光後之光的場合,係使用偏波面保存光纖作為導光構件32,維持從光源裝置13輸出之雷射光之偏光狀態來導光。又,例如亦可以光纖導引從光源31輸出之光束,以偏光板使從光纖輸出之光偏光。亦即,光源裝置13,在導引隨機偏光之光束時,亦可以偏光板使隨機偏光之光束偏光,亦可使用偏光分束器PBS分歧成P偏向與S偏向之各光束,使透射該偏光分束器PBS之光作為射入一系統之照明光學系IL之光束使用,使在該偏光分束器PBS反射之光作為射入另一系統之照明光學系IL的光束使用。又,光源裝置13亦可藉由使用透鏡等之中繼光學系導引從光源31輸出之光束。 The light source device 13 emits a polarized laser with the same wavelength and phase to the polarizing beam splitter PBS. For example, when the light beam emitted from the light source device 13 is polarized light, the light source device 13 uses a polarization plane-preserving fiber as the light guide member 32 to maintain the polarization state of the laser light output from the light source device 13 to guide the light. Also, for example, the light beam output from the light source 31 may be guided by an optical fiber, and the light output from the optical fiber may be polarized by a polarizing plate. That is, the light source device 13 can also use a polarizing plate to polarize the randomly polarized light beam when guiding the randomly polarized light beam, and can also use the polarization beam splitter PBS to split it into each beam of P and S deflection, so that the polarized light can be transmitted. The light of the beam splitter PBS is used as a light beam entering the illumination optical system IL of one system, and the light reflected by the polarization beam splitter PBS is used as a light beam entering the illumination optical system IL of the other system. In addition, the light source device 13 may guide the light beam output from the light source 31 by using a relay optical system such as a lens.

此處,如圖3所示,第1實施形態之曝光裝置U3,係假定所謂之多透鏡(multi lens)方式之曝光裝置。又,圖3中,顯示了從-Z側觀察光罩保持圓筒21所保持之光罩M上之照明區域IR的俯視圖(圖3之左圖)、與從+Z側觀察基板支承圓筒25所支承之基板P上之投影區域PA的俯視圖(圖3之右圖)。圖3之符號Xs,代表光罩保持圓筒21及基板支承圓筒25之移動方向(旋轉方向)。多透鏡方式之曝光裝置U3,係於光罩M上之複數個(第1實施形態中,例如係6個)照明區域IR1~IR6分別照明照明光束EL1,將各照明光束EL1在各照明區域IR1~IR6反射所得之複數個投影光束EL2,投影曝光至基板P上複數個(第1實施形態中,例如係6個)投影區域PA1~PA6。 Here, as shown in FIG. 3, the exposure apparatus U3 of 1st Embodiment assumes the exposure apparatus of the so-called multi-lens system. In addition, in FIG. 3, the top view (the left side view of FIG. 3) of the illumination region IR on the mask M held by the mask holding cylinder 21 is seen from the −Z side, and the substrate support cylinder is seen from the +Z side. 25 is a plan view of the projected area PA on the substrate P supported by the substrate P (the right side of FIG. 3 ). Symbol Xs in FIG. 3 represents the moving direction (rotation direction) of the mask holding cylinder 21 and the substrate supporting cylinder 25 . The exposure apparatus U3 of the multi-lens system is provided with a plurality of (for example, six in the first embodiment) illumination regions IR1 to IR6 on the mask M to illuminate the illumination light beams EL1, respectively, and direct the illumination light beams EL1 to the illumination regions IR1. A plurality of projection light beams EL2 obtained by reflecting ~IR6 are projected and exposed to a plurality of (in the first embodiment, six, for example) projection areas PA1 to PA6 on the substrate P.

首先,說明以照明光學系IL照明之複數個照明區域IR1~IR6。如圖3所示,複數個照明區域IR1~IR6係隔著中心面CL於旋轉方向上游側之光罩M上配置第1照明區域IR1、第3照明區域IR3及第5照明區域IR5,於旋轉方向下游 側之光罩M上配置第2照明區域IR2、第4照明區域IR4及第6照明區域IR6。各照明區域IR1~IR6係具有延伸於光罩M之軸方向(Y方向)之平行的短邊及長邊之細長梯形之區域。此時,梯形之各照明區域IR1~IR6係成一其短邊位於中心面CL側、其長邊位於外側之區域。第1照明區域IR1、第3照明區域IR3及第5照明區域IR5,於軸方向相隔既定間隔配置。又,第2照明區域IR2、第4照明區域IR4及第6照明區域IR6亦於軸方向相隔既定間隔配置。此時,第2照明區域IR2,於軸方向係配置在第1照明區域IR1與第3照明區域IR3之間。同樣的,第3照明區域IR3,於軸方向係配置在第2照明區域IR2與第4照明區域IR4之間。第4照明區域IR4,於軸方向配置在第3照明區域IR3與第5照明區域IR5之間。第5照明區域IR5,於軸方向配置在第4照明區域IR4與第6照明區域IR6之間。各照明區域IR1~IR6,從光罩M之周方向(X方向)看,係以相鄰梯形照明區域之斜邊部之三角部重疊(overlap)之方式配置。又,第1實施形態中,各照明區域IR1~IR6雖係作成梯形區域,但亦可以是作成長方形區域。 First, a plurality of illumination regions IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in FIG. 3 , the plurality of illumination regions IR1 to IR6 are arranged on the mask M on the upstream side in the rotation direction with the center plane CL interposed therebetween. direction downstream The 2nd illumination area|region IR2, the 4th illumination area|region IR4, and the 6th illumination area|region IR6 are arrange|positioned on the mask M of the side. Each of the illumination regions IR1 to IR6 is an elongated trapezoidal region having parallel short sides and long sides extending in the axial direction (Y direction) of the mask M. At this time, each of the trapezoidal illumination regions IR1 to IR6 is a region in which the short side is located on the center plane CL side and the long side is located outside. The 1st illumination area|region IR1, the 3rd illumination area|region IR3, and the 5th illumination area|region IR5 are arrange|positioned at predetermined intervals in an axial direction. Moreover, the 2nd illumination area|region IR2, the 4th illumination area|region IR4, and the 6th illumination area|region IR6 are also arrange|positioned at predetermined intervals in an axial direction. At this time, 2nd illumination area|region IR2 is arrange|positioned between 1st illumination area|region IR1 and 3rd illumination area|region IR3 in an axial direction. Similarly, 3rd illumination area|region IR3 is arrange|positioned between 2nd illumination area|region IR2 and 4th illumination area|region IR4 in an axial direction. 4th illumination area|region IR4 is arrange|positioned between 3rd illumination area|region IR3 and 5th illumination area|region IR5 in an axial direction. The 5th illumination area|region IR5 is arrange|positioned between the 4th illumination area|region IR4 and the 6th illumination area|region IR6 in an axial direction. Each illumination area IR1-IR6 is arrange|positioned so that the triangle part of the hypotenuse part of the adjacent trapezoidal illumination area may overlap when seeing the peripheral direction (X direction) of the mask M. Moreover, in 1st Embodiment, although each illumination area|region IR1-IR6 was made into a trapezoid area, it may be made into a rectangular area.

又,光罩M,具有形成有光罩圖案之圖案形成區域A3、與沒有形成光罩圖案之圖案非形成區域A4。圖案非形成區域A4係吸收照明光束EL1之不易反射區域,配置成以框狀圍繞圖案形成區域A3。第1~第6照明區域IR1~IR6係配置成能涵蓋圖案形成區域A3之Y方向全寬。 Moreover, the mask M has the pattern formation area A3 in which the mask pattern is formed, and the pattern non-formation area A4 in which the mask pattern is not formed. The pattern non-formation area A4 is a hard reflection area that absorbs the illumination light beam EL1, and is arranged to surround the pattern formation area A3 in a frame shape. The first to sixth illumination regions IR1 to IR6 are arranged so as to cover the full width of the pattern forming region A3 in the Y direction.

照明光學系IL係對應複數個照明區域IR1~IR6設有複數個(第1實施形態中,例如係6個)。於複數個照明光學系(分割罩明光學系)IL1~IL6,分別射入來自光源裝置13之照明光束EL1。各照明光學系IL1~IL6,將從光源裝置13射入之各照明光束EL1分別導至各照明區域IR1~IR6。也就是說,第1照明光學系IL1將照明光束EL1導至第1照明區域IR1,同樣的,第2~第6照明光學系IL2~IL6將照明光束EL1導至第2~第6照明區域IR2~IR6。複數個照明光學系IL1~IL6,隔著中心面CL在配置第1、第3、第5照明區域IR1、IR3、IR5之側(圖2之 左側),配置第1照明光學系IL1、第3照明光學系IL3及第5照明光學系IL5。第1照明光學系IL1、第3照明光學系IL3及第5照明光學系IL5於Y方向相隔既定間隔配置。又,複數個照明光學系IL1~IL6,隔著中心面CL在配置第2、第4、第6照明區域IR2、IR4、IR6之側(圖2之右側),配置第2照明光學系IL2、第4照明光學系IL4及第6照明光學系IL6。第2照明光學系IL2、第4照明光學系IL4及第6照明光學系IL6於Y方向相隔既定間隔配置。此時,第2照明光學系IL2,係於軸方向配置在第1照明光學系IL1與第3照明光學系IL3之間。同樣的,第3照明光學系IL3、第4照明光學系IL4、第5明光學系IL5,於軸方向配置在第2照明光學系IL2與第4照明光學系IL4之間、第3照明光學系IL3與第5照明光學系IL5之間、第4照明光學系IL4與第6照明光學系IL6之間。此外,第1照明光學系IL1、第3照明光學系IL3及第5照明光學系IL5與第2照明光學系IL2、第4照明光學系IL4及第6照明光學系IL6,從Y方向看係對稱配置。 A plurality of illumination optical systems IL are provided corresponding to a plurality of illumination regions IR1 to IR6 (for example, six in the first embodiment). The illumination light beams EL1 from the light source device 13 are respectively incident on the plurality of illumination optical systems (divided and illuminating optical systems) IL1 to IL6. The respective illumination optical systems IL1 to IL6 guide the respective illumination light beams EL1 incident from the light source device 13 to the respective illumination regions IR1 to IR6, respectively. That is, the first illumination optical system IL1 guides the illumination light flux EL1 to the first illumination region IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 guide the illumination light flux EL1 to the second to sixth illumination regions IR2 ~IR6. A plurality of illumination optical systems IL1 to IL6 are arranged on the side where the first, third, and fifth illumination regions IR1, IR3, and IR5 are arranged across the center plane CL (Fig. 2). Left), the 1st illumination optical system IL1, the 3rd illumination optical system IL3, and the 5th illumination optical system IL5 are arrange|positioned. The 1st illumination optical system IL1, the 3rd illumination optical system IL3, and the 5th illumination optical system IL5 are arrange|positioned at predetermined intervals in the Y direction. In addition, the plurality of illumination optical systems IL1 to IL6 are arranged on the side (right side in FIG. 2 ) on which the second, fourth, and sixth illumination regions IR2, IR4, and IR6 are arranged with the center plane CL interposed therebetween. The fourth illumination optical system IL4 and the sixth illumination optical system IL6. The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged at a predetermined interval in the Y direction. At this time, the 2nd illumination optical system IL2 is arrange|positioned between the 1st illumination optical system IL1 and the 3rd illumination optical system IL3 in an axial direction. Similarly, the third illumination optical system IL3, the fourth illumination optical system IL4, and the fifth bright optical system IL5 are arranged in the axial direction between the second illumination optical system IL2 and the fourth illumination optical system IL4, and the third illumination optical system Between IL3 and the 5th illumination optical system IL5, and between the 4th illumination optical system IL4 and the 6th illumination optical system IL6. Further, the first illumination optical system IL1, the third illumination optical system IL3, the fifth illumination optical system IL5, the second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are symmetrical when viewed from the Y direction configuration.

其次,參照圖4說明各照明光學系IL1~IL6。又,由於各照明光學系IL1~IL6皆係同樣構成,因此以第1照明光學系IL1(以下,僅稱為照明光學系IL)為例進行說明。 Next, each of the illumination optical systems IL1 to IL6 will be described with reference to FIG. 4 . Moreover, since each illumination optical system IL1-IL6 has the same structure, the 1st illumination optical system IL1 (henceforth, only called illumination optical system IL) is demonstrated as an example.

照明光學系IL,為了以均一照度照明照明區域IR(第1照明區域IR1),係適用將來自光源裝置13之照明光束EL1轉換為多數個點光源面狀集合之面光源像的柯勒照明法。又,照明光學系IL係使用偏光分束器PBS之落射照明系。照明光學系IL,從來自光源裝置13之照明光束EL1之射入側起,依序具有照明光學模組ILM、偏光分束器PBS、及1/4波長板41。 The illumination optical system IL applies the Köhler illumination method of converting the illumination light beam EL1 from the light source device 13 into a surface light source image in which a plurality of point light sources are assembled in the form of a surface in order to illuminate the illumination region IR (first illumination region IR1) with a uniform illuminance . In addition, the illumination optical system IL is an epi-illumination system using the polarizing beam splitter PBS. The illumination optical system IL includes an illumination optical module ILM, a polarization beam splitter PBS, and a quarter-wave plate 41 in this order from the incident side of the illumination light beam EL1 from the light source device 13 .

如圖4所示,照明光學模組ILM,從照明光束EL1之射入側起,依序包含準直透鏡51、複眼透鏡52、複數個聚光透鏡53、柱面透鏡54、照明視野光闌55、及複數個中繼透鏡56,係設在第1光軸BX1上。準直透鏡51設在光源裝置13之導光構件32之射出側。準直透鏡51之光軸配置在第1光軸BX上。準直透鏡 51照射複眼透鏡52之射入側之全面。複眼透鏡52設在準直透鏡51之射出側。複眼透鏡52之射出側之面之中心配置在第1光軸BX1上。複眼透鏡52,將來自準直透鏡51之照明光束EL1分割成多數個點光源,並使來自各點光源之光重疊而射入後述之聚光透鏡53。 As shown in FIG. 4 , the illumination optical module ILM includes a collimating lens 51 , a fly-eye lens 52 , a plurality of condenser lenses 53 , a cylindrical lens 54 , and an illumination field diaphragm in sequence from the incident side of the illumination beam EL1 55, and a plurality of relay lenses 56 are provided on the first optical axis BX1. The collimating lens 51 is provided on the emitting side of the light guide member 32 of the light source device 13 . The optical axis of the collimator lens 51 is arranged on the first optical axis BX. collimating lens 51 irradiates the entire surface of the incident side of the fly-eye lens 52 . The fly-eye lens 52 is provided on the emission side of the collimator lens 51 . The center of the surface on the output side of the fly-eye lens 52 is arranged on the first optical axis BX1. The fly-eye lens 52 divides the illumination light beam EL1 from the collimator lens 51 into a plurality of point light sources, and superimposes the light from each point light source to be incident on the condenser lens 53 to be described later.

此時,生成點光源像之複眼透鏡52之射出側之面,藉由從複眼透鏡52透過照明視野光闌55至後述投影光學系PL之第1凹面鏡72的各種透鏡,配置成與第1凹面鏡72之反射面所在之光瞳面光學上共軛。聚光透鏡53設在複眼透鏡52之射出側,其光軸配置在第1光軸BX1上。聚光透鏡53將來自複眼透鏡52之各點光源之光(照明光束EL1)透過柱面透鏡54而照射成在照明視野光闌55上重疊。在無柱面透鏡54之場合,到達照明視野光闌55上各點之照明光束EL1之主光線均與第1光軸BX1平行。然而,藉由柱面透鏡54之作用,照射照明視野光闌55之照明光束EL1之各主光線成為在圖4中之Y方向彼此平行(亦與第1光軸BX1平行)的遠心狀態,在XZ面內,成為對應於像高位置而相對第1光軸BX1之傾斜依序不同之非遠心狀態。 At this time, the surface on the output side of the fly-eye lens 52 that generates the point light source image is arranged so as to be connected with the first concave mirror through various lenses from the fly-eye lens 52 through the illumination field stop 55 to the first concave mirror 72 of the projection optical system PL described later. The pupil plane where the reflective surface of 72 is located is optically conjugate. The condenser lens 53 is provided on the output side of the fly-eye lens 52, and its optical axis is arranged on the first optical axis BX1. The condenser lens 53 irradiates the light (illumination light beam EL1 ) from each point light source of the fly-eye lens 52 through the cylindrical lens 54 so as to overlap the illumination field stop 55 . When there is no cylindrical lens 54, the chief rays of the illumination light beam EL1 reaching each point on the illumination field stop 55 are all parallel to the first optical axis BX1. However, by the action of the cylindrical lens 54, each chief ray of the illumination light beam EL1 irradiating the illumination field stop 55 becomes a telecentric state in which the Y direction in FIG. 4 is parallel to each other (also parallel to the first optical axis BX1). In the XZ plane, the inclination with respect to the first optical axis BX1 is sequentially different in a non-telecentric state corresponding to the image height position.

柱面透鏡54係射入側為平面、射出側為凸面之平凸柱面透鏡,與照明視野光闌55之射入側相鄰設置。柱面透鏡54之光軸配置在第1光軸BX1上,柱面透鏡54之射出側之凸圓筒面之母線設成與圖4中之Y軸平行。藉此,在通過柱面透鏡54後一刻之照明光束EL1之各主光線係在Y方向彼此與第1光軸BX1平行,在XZ面內中往第1光軸BX1上之某點(嚴格來說為與第1光軸BX1正交之延伸於Y方向之線)收斂。 The cylindrical lens 54 is a plano-convex cylindrical lens with a plane incident side and a convex exit side, and is disposed adjacent to the incident side of the illumination field stop 55 . The optical axis of the cylindrical lens 54 is arranged on the first optical axis BX1, and the generatrix of the convex cylindrical surface on the exit side of the cylindrical lens 54 is set parallel to the Y axis in FIG. 4 . Thereby, each chief ray of the illumination light beam EL1 immediately after passing through the cylindrical lens 54 is parallel to the first optical axis BX1 in the Y direction, and goes to a certain point (strictly speaking) on the first optical axis BX1 in the XZ plane. Said to be a line extending in the Y direction orthogonal to the first optical axis BX1) converges.

照明視野光闌55之開口部形成為與照明區域IR相同形狀之梯形(矩形),照明視野光闌55之開口部中心配置在第1光軸BX1上。此時,照明視野光闌55,藉由從照明視野光闌55至光罩M之圓筒狀之面P1間之中繼透鏡(成像系)56、偏光分束器PBS、1/4波長板41等而被配置在與光罩M上之照明區域IR 光學上共軛之面。中繼透鏡56設在照明視野光闌55之射出側。中繼透鏡56之光軸配置在第1光軸BX1上。中繼透鏡56使通過照明視野光闌55之開口部之照明光束EL1透過偏光分束器PBS與1/4波長板41而照射於光罩M之圓筒狀之面P1(照明區域IR)。 The opening of the illumination field stop 55 is formed into a trapezoid (rectangle) having the same shape as the illumination region IR, and the center of the opening of the illumination field stop 55 is arranged on the first optical axis BX1. At this time, the illumination field diaphragm 55 is provided by a relay lens (imaging system) 56 between the illumination field diaphragm 55 and the cylindrical surface P1 of the mask M, a polarizing beam splitter PBS, and a quarter-wavelength plate 41, etc. and are arranged on the illumination area IR on the mask M Optically conjugated planes. The relay lens 56 is provided on the emission side of the illumination field stop 55 . The optical axis of the relay lens 56 is arranged on the first optical axis BX1. The relay lens 56 irradiates the cylindrical surface P1 (illumination region IR) of the mask M with the illumination beam EL1 passing through the opening of the illumination field stop 55 through the polarization beam splitter PBS and the quarter-wave plate 41 .

偏光分束器PBS,配置在照明光學模組ILM與中心面CL之間。偏光分束器PBS,在波面分割面反射作為S偏光之直線偏光之光束,使作為P偏光之直線偏光之光束透射。此處,射入偏光分束器PBS之照明光束EL1係作為S偏光之直線偏光的光束,射入偏光分束器PBS之來自光罩M之反射光(投影光束EL2)藉由1/4波長板41而成為P偏光之直線偏光之光束。 The polarizing beam splitter PBS is arranged between the illumination optical module ILM and the center plane CL. The polarizing beam splitter PBS reflects the linearly polarized light beam as S-polarized light on the wavefront dividing surface, and transmits the linearly polarized light beam as P-polarized light. Here, the illumination beam EL1 entering the polarizing beam splitter PBS is a linearly polarized beam of S-polarized light, and the reflected light (projection beam EL2 ) entering the polarizing beam splitter PBS from the mask M is transmitted by 1/4 wavelength The plate 41 becomes a linearly polarized light beam of P polarized light.

藉此,偏光分束器PBS係反射從照明光學模組ILM射入波面分割面之照明光束EL1,且透射在光罩M反射且射入波面分割面之投影光束EL2。偏光分束器PBS,雖較佳為反射射入波面分割面之照明光束EL1之全部,但亦可反射射入波面分割面之照明光束EL1之大部分,而使一部分在波面分割面透射或吸收。同樣地,偏光分束器PBS,雖較佳為使射入波面分割面之投影光束EL2之全部透射,但亦可使射入波面分割面之投影光束EL2之大部分透射,而將一部分反射或吸收。 Thereby, the polarization beam splitter PBS reflects the illumination light beam EL1 incident on the wavefront dividing surface from the illumination optical module ILM, and transmits the projection light beam EL2 reflected on the mask M and incident on the wavefront dividing surface. Although the polarizing beam splitter PBS preferably reflects all of the illumination beam EL1 incident on the wavefront dividing surface, it can also reflect most of the illumination beam EL1 incident on the wavefront dividing surface, so that a part of the illumination beam EL1 is transmitted or absorbed on the wavefront dividing surface . Similarly, although the polarizing beam splitter PBS preferably transmits all the projection light beam EL2 incident on the wavefront dividing surface, it can also transmit most of the projection light beam EL2 incident on the wavefront dividing surface, while reflecting or reflecting a part of the projection light beam EL2. absorb.

1/4波長板41配置在偏光分束器PBS與光罩M之間,將被偏光分束器PBS反射之照明光束EL1從直線偏光(S偏光)轉換為圓偏光。圓偏光之照明光束EL1照射在光罩M。1/4波長板41將在光罩M反射之圓偏光之投影光束EL2轉換為直線偏光(P偏光)。 The quarter-wave plate 41 is disposed between the polarization beam splitter PBS and the mask M, and converts the illumination beam EL1 reflected by the polarization beam splitter PBS from linear polarization (S polarization) to circular polarization. The illumination beam EL1 of circularly polarized light is irradiated on the mask M. The quarter-wave plate 41 converts the circularly polarized projection beam EL2 reflected by the mask M into linearly polarized light (P polarized light).

此處,照明光學系IL係以在光罩M之面P1上之照明區域IR反射之投影光束EL2之主光線不論在Y方向與XZ面內之任一者均成為遠心狀態之方式對光罩M之照明區域IR照明照明光束EL1。參照圖5說明其狀態。 Here, the illumination optical system IL is directed to the reticle so that the chief ray of the projection light beam EL2 reflected by the illumination region IR on the surface P1 of the reticle M becomes a telecentric state in either the Y direction or the XZ plane. The illumination region IR of M illuminates the illumination beam EL1. The state will be described with reference to FIG. 5 .

圖5係將照射於光罩M上之照明區域IR之照明光束EL1與在照明 區域IR反射之投影光束EL2之狀態在XZ面(與第1軸AX1垂直之面)內誇張顯示的圖。如圖5所示,上述之照明光學系IL,係以在光罩M之照明區域IR反射之投影光束EL2之主光線成為遠心(平行系)之方式,使照射於光罩M之照明區域IR之照明光束EL1之主光線在XZ面內意圖地成為非遠心狀態,在Y方向成為遠心狀態。 FIG. 5 shows the illumination beam EL1 illuminating the illumination region IR on the mask M and the illumination The state of the projection light beam EL2 reflected in the area IR is exaggerated and displayed in the XZ plane (the plane perpendicular to the first axis AX1). As shown in FIG. 5, the above-mentioned illumination optical system IL is such that the chief ray of the projection light beam EL2 reflected in the illumination area IR of the mask M becomes telecentric (parallel system), so that the illumination area IR of the mask M is irradiated on the illumination area IR The chief ray of the illumination light beam EL1 intentionally becomes a non-telecentric state in the XZ plane, and becomes a telecentric state in the Y direction.

照明光束EL1之此種特性,係藉由圖4中所示之柱面透鏡54被賦予。具體而言,在設定有通過光罩M之面P1上之照明區域IR之周方向中央之點Q1而朝向第1軸AX1之線與光罩M之面P1之半徑Rm之1/2之圓(Rm/2)的交點Q2時,係將柱面透鏡54之凸圓筒透鏡面之曲率設定成通過照明區域IR之照明光束EL1之各主光線在XZ面射向交點Q2。如此,在照明區域IR內反射之投影光束EL2之各主光線,在XZ面內成為與通過第1軸AX1、點Q1、交點Q2之直線平行(遠心)的狀態。當然,由於光罩M之面P1在Y方向之曲率可視為無限大,因此投影光束EL2之各主光線在Y方向亦為遠心狀態。 This characteristic of the illumination beam EL1 is given by the cylindrical lens 54 shown in FIG. 4 . Specifically, a circle that passes through a point Q1 at the center of the circumferential direction of the illumination region IR on the surface P1 of the mask M and goes toward the first axis AX1 and a circle that is half of the radius Rm of the surface P1 of the mask M is set. At the intersection Q2 of (Rm/2), the curvature of the convex cylindrical lens surface of the cylindrical lens 54 is set so that the principal rays of the illumination light beam EL1 passing through the illumination region IR are directed to the intersection Q2 on the XZ plane. In this way, each chief ray of the projection light beam EL2 reflected in the illumination region IR becomes parallel (telecentric) to the straight line passing through the first axis AX1, the point Q1, and the intersection Q2 in the XZ plane. Of course, since the curvature of the surface P1 of the mask M in the Y direction can be regarded as infinite, the principal rays of the projection light beam EL2 are also in a telecentric state in the Y direction.

其次,說明以投影光學系PL投影曝光之複數個投影區域PA1~PA6。如圖3所示,基板P上之複數個投影區域PA1~PA6係與光罩M上之複數個照明區域IR1~IR6對應配置。也就是說,基板P上之複數個投影區域PA1~PA6係隔著中心面CL於搬送方向上游側之基板P上配置第1投影區域PA1、第3投影區域PA3及第5投影區域PA5,於搬送方向下游側之基板P上配置第2投影區域PA2、第4投影區域PA4及第6投影區域PA6。各投影區域PA1~PA6係具有延伸於基板P之寬度方向(Y方向)之短邊及長邊的細長梯形區域。此時,梯形之各投影區域PA1~PA6係其短邊位於中心面CL側、其長邊位於外側之區域。第1投影區域PA1、第3投影區域PA3及第5投影區域PA5於寬度方向相隔既定間隔配置。又,第2投影區域PA2、第4投影區域PA4及第6投影區域PA6亦於寬度方向相隔既定間隔配置。此時,第2投影區域PA2,於軸方向係配置在第1投影區域PA1與第3投影區域PA3之間。同樣的,第3投影區域PA3,於軸方向配置在第2投影區域PA2與 第4投影區域PA4之間。第4投影區域PA4於軸方向配置在第3投影區域PA3與第5投影區域PA5之間。第5投影區域PA5於軸方向配置在第4投影區域PA4與第6投影區域PA6之間。各投影區域PA1~PA6,與各照明區域IR1~IR6同樣的,從基板P之搬送方向看,係以相鄰之梯形投影區域PA之斜邊部之三角部重疊(overlap)之方式配置。此時,投影區域PA,係在相鄰投影區域PA之重複區域之曝光量與在不重複區域之曝光量成為實質相同的形狀。而第1~第6投影區域PA1~PA6係被配置成能涵蓋曝光至基板P上之曝光區域A7之Y方向全寬。 Next, a plurality of projection areas PA1 to PA6 to be projected and exposed by the projection optical system PL will be described. As shown in FIG. 3 , the plurality of projection areas PA1 to PA6 on the substrate P are arranged corresponding to the plurality of illumination areas IR1 to IR6 on the mask M. That is, the plurality of projection areas PA1 to PA6 on the substrate P are arranged on the substrate P on the upstream side of the conveyance direction across the center plane CL with the first projection area PA1, the third projection area PA3, and the fifth projection area PA5. The 2nd projection area|region PA2, the 4th projection area|region PA4, and the 6th projection area|region PA6 are arrange|positioned on the board|substrate P on the downstream side of a conveyance direction. Each projection area|region PA1-PA6 has the elongate trapezoid area extended in the short side and long side of the width direction (Y direction) of the board|substrate P. At this time, each projected area PA1-PA6 of a trapezoid is an area|region whose short side is located in the center plane CL side, and the long side is located in an outer side. The 1st projection area|region PA1, the 3rd projection area|region PA3, and the 5th projection area|region PA5 are arrange|positioned at predetermined intervals in the width direction. Moreover, the 2nd projection area|region PA2, the 4th projection area|region PA4, and the 6th projection area|region PA6 are also arrange|positioned at predetermined intervals in the width direction. At this time, the 2nd projection area|region PA2 is arrange|positioned between the 1st projection area|region PA1 and the 3rd projection area|region PA3 in an axial direction. Similarly, the third projection area PA3 is arranged between the second projection area PA2 and the second projection area PA2 in the axial direction. Between the fourth projection areas PA4. The 4th projection area|region PA4 is arrange|positioned between 3rd projection area|region PA3 and 5th projection area|region PA5 in an axial direction. The 5th projection area|region PA5 is arrange|positioned between the 4th projection area|region PA4 and the 6th projection area|region PA6 in an axial direction. Like the illumination areas IR1 to IR6, the projection areas PA1 to PA6 are arranged so that the triangles of the oblique sides of the adjacent trapezoidal projection areas PA overlap when viewed in the conveyance direction of the substrate P. At this time, the projection area PA has substantially the same shape as the exposure amount in the overlapping area of the adjacent projection areas PA and the exposure amount in the non-overlapping area. And the 1st - 6th projection area|regions PA1-PA6 are arrange|positioned so that the Y direction full width of the exposure area A7 exposed to the board|substrate P may be covered.

此處,圖2中,於XZ面內觀察時,從光罩M上之奇數個照明區域IR1(及IR3、IR5)中心點至偶數個照明區域IR2(及IR4、IR6)中心點之周長距離,係設定成從順著基板支承圓筒25之支承面P2之基板P上之奇數個投影區域PA1(及PA3、PA5)之中心點至偶數個投影區域PA2(及PA4、PA6)中心點之周長實質相等。其原因在於,各投影光學系PL1~PL6之投影倍率設為等倍(×1)之故。 Here, in FIG. 2, when viewed in the XZ plane, the circumference from the center point of the odd-numbered illumination regions IR1 (and IR3, IR5) to the center point of the even-numbered illumination regions IR2 (and IR4, IR6) on the mask M The distance is set from the center point of the odd-numbered projection areas PA1 (and PA3, PA5) on the substrate P along the supporting surface P2 of the substrate-supporting cylinder 25 to the center point of the even-numbered projection areas PA2 (and PA4, PA6) The perimeters are substantially equal. The reason for this is that the projection magnifications of the respective projection optical systems PL1 to PL6 are set to the same magnification (×1).

投影光學系PL,係對應複數個投影區域PA1~PA6設有複數個(在第1實施形態中例如為六個)。於複數個投影光學系(分割投影光學系)PL1~PL6,從複數個照明區域IR1~IR6反射之複數個投影光束EL2分別射入。各投影光學系PL1~PL6將被光罩M反射之各投影光束EL2分別導至各投影區域PA1~PA6。也就是說,第1投影光學系PL1將來自第1照明區域IR1之投影光束EL2導至第1投影區域PA1,同樣的,第2~第6投影光學系PL2~PL6將來自第2~第6照明區域IR2~IR6之各投影光束EL2導至第2~第6投影區域PA2~PA6。複數個投影光學系PL1~PL6係隔著中心面CL,於配置第1、第3、第5投影區域PA1、PA3、PA5之側(圖2之左側)配置第1投影光學系PL1、第3投影光學系PL3及第5投影光學系PL5。第1投影光學系PL1、第3投影光學系PL3及第5投影光學系PL5於Y方向相隔既定間隔配置。又,複數個投影光學系PL1~PL6係隔著中心面CL,於配置第2、 第4、第6投影區域PA2、PA4、PA6之側(圖2之右側)配置第2投影光學系PL2、第4投影光學系PL4及第6投影光學系PL6。第2投影光學系PL2、第4投影光學系PL4及第6投影光學系PL6於Y方向相隔既定間隔配置。此時,第2投影光學系PL2,於軸方向配置在第1投影光學系PL1與第3投影光學系PL3之間。同樣的,第3投影光學系PL3、第4投影光學系PL4、第5投影光學系PL5,於軸方向配置在第2投影光學系PL2與第4投影光學系PL4之間、第3投影光學系PL3與第5投影光學系PL5之間、第4投影光學系PL4與第6投影光學系PL6之間。又,第1投影光學系PL1、第3投影光學系PL3及第5投影光學系PL5與第2投影光學系PL2、第4投影光學系PL4及第6投影光學系PL6,從Y方向看係對稱配置。 The projection optical system PL is provided with a plurality of (for example, six in the first embodiment) corresponding to the plurality of projection areas PA1 to PA6. The plurality of projection light beams EL2 reflected from the plurality of illumination regions IR1 to IR6 are respectively incident on the plurality of projection optical systems (divided projection optical systems) PL1 to PL6. Each projection optical system PL1-PL6 guides each projection light beam EL2 reflected by the mask M to each projection area|region PA1-PA6, respectively. That is, the 1st projection optical system PL1 guides the projection light beam EL2 from the 1st illumination area IR1 to the 1st projection area PA1, and similarly, the 2nd - 6th projection optical system PL2 - PL6 will guide the projection light beam EL2 from 2nd - 6th The projection light beams EL2 of the illumination regions IR2 to IR6 are guided to the second to sixth projection regions PA2 to PA6. The plurality of projection optical systems PL1 to PL6 are arranged on the side (left side in FIG. 2 ) where the first, third, and fifth projection regions PA1, PA3, and PA5 are arranged with the center plane CL interposed therebetween. Projection optical system PL3 and fifth projection optical system PL5. The 1st projection optical system PL1, the 3rd projection optical system PL3, and the 5th projection optical system PL5 are arrange|positioned at predetermined intervals in the Y direction. In addition, a plurality of projection optical systems PL1 to PL6 are arranged on the second, The 2nd projection optical system PL2, the 4th projection optical system PL4, and the 6th projection optical system PL6 are arrange|positioned on the side (right side of FIG. 2) of 4th, 6th projection area|region PA2, PA4, PA6. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at predetermined intervals in the Y direction. At this time, the second projection optical system PL2 is arranged between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, the third projection optical system PL3, the fourth projection optical system PL4, and the fifth projection optical system PL5 are arranged in the axial direction between the second projection optical system PL2 and the fourth projection optical system PL4, and the third projection optical system Between PL3 and the 5th projection optical system PL5, and between the 4th projection optical system PL4 and the 6th projection optical system PL6. In addition, the first projection optical system PL1, the third projection optical system PL3, the fifth projection optical system PL5, the second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are symmetrical when viewed from the Y direction. configuration.

其次,參照圖4說明各投影光學系PL1~PL6之詳細構成。又,由於各投影光學系PL1~PL6係同樣構成,因此以第1投影光學系PL1(以下,僅稱為投影光學系PL)為例進行說明。 Next, the detailed configuration of each of the projection optical systems PL1 to PL6 will be described with reference to FIG. 4 . In addition, since each projection optical system PL1 - PL6 is comprised similarly, it demonstrates taking the 1st projection optical system PL1 (henceforth, only called projection optical system PL) as an example.

投影光學系PL,將在光罩M上之照明區域IR(第1照明區域IR1)之光罩圖案之像投影於基板P上之投影區域PA。投影光學系PL,從來自光罩M之投影光束EL2之射入側起,依序具有上述1/4波長板41、上述偏光分束器PBS、及投影光學模組PLM。 The projection optical system PL projects the image of the mask pattern of the illumination region IR (first illumination region IR1 ) on the mask M on the projection region PA on the substrate P. The projection optical system PL includes the above-mentioned quarter wave plate 41, the above-mentioned polarizing beam splitter PBS, and a projection optical module PLM in this order from the incident side of the projection light beam EL2 from the mask M.

1/4波長板41及偏光分束器PBS係與照明光學系IL兼用。換言之,照明光學系IL及投影光學系PL共有1/4波長板41及偏光分束器PBS。 The quarter-wave plate 41 and the polarizing beam splitter PBS are used together with the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share the quarter-wave plate 41 and the polarization beam splitter PBS.

在照明區域IR反射之投影光束EL2被1/4波長板41從圓偏光轉換為直線偏光(P偏光)後,穿透偏光分束器PBS,成為遠心之成像光束而射入投影光學系PL(投影光學模組PLM)。 The projection beam EL2 reflected in the illumination area IR is converted from circularly polarized light to linearly polarized light (P polarized light) by the quarter-wave plate 41, and then passes through the polarizing beam splitter PBS to become a telecentric imaging beam and enters the projection optical system PL ( Projection Optical Module PLM).

投影光學模組PLM與照明光學模組ILM對應設置。也就是說,第1投影光學系PL1之投影光學模組PLM係將被第1照明光學系IL1之照明光學模組ILM照明之第1照明區域IR1之光罩圖案之像投影於基板P上之第1投影區域 PA1。同樣地,第2~第6投影光學系PL2~PL6之投影光學模組PLM係將被第2~第6照明光學系IL2~IL6之照明光學模組ILM照明之第2~第6照明區域IR2~IR6之光罩圖案之像投影於基板P上之第2~第6投影區域PA2~PA6。 The projection optical module PLM is set correspondingly to the illumination optical module ILM. That is, the projection optical module PLM of the first projection optical system PL1 projects the image of the mask pattern of the first illumination region IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1 onto the substrate P. 1st projection area PA1. Similarly, the projection optical modules PLM of the second to sixth projection optical systems PL2 to PL6 will be illuminated by the second to sixth illumination regions IR2 of the illumination optical modules ILM of the second to sixth illumination optical systems IL2 to IL6. The image of the mask pattern of ~IR6 is projected on the 2nd~6th projection area|region PA2~PA6 on the board|substrate P.

如圖4所示,投影光學模組PLM,具備於中間像面P7成像出照明區域IR之光罩圖案之像的第1光學系61、將第1光學系61所成像之中間像之至少一部分再成像於基板P之投影區域PA的第2光學系62、以及配置在形成中間像之中間像面P7的投影視野光闌63。此外,投影光學模組PLM,具備聚焦修正光學構件64、像偏移用光學構件65、倍率修正用光學構件66、旋轉(rotation)修正機構67、及偏光調整機構68。 As shown in FIG. 4 , the projection optical module PLM includes a first optical system 61 that forms an image of the mask pattern of the illumination region IR on the intermediate image plane P7, and at least a part of the intermediate image formed by the first optical system 61 The second optical system 62 that is re-imaged on the projection area PA of the substrate P, and the projection field stop 63 arranged on the intermediate image plane P7 where the intermediate image is formed. Further, the projection optical module PLM includes a focus correction optical member 64 , an image shift optical member 65 , a magnification correction optical member 66 , a rotation correction mechanism 67 , and a polarization adjustment mechanism 68 .

第1光學系61及第2光學系62係例如將戴森(Dyson)系加以變形之遠心的反射折射光學系。第1光學系61,其光軸(以下,稱第2光軸BX2)相對中心面CL實質正交。第1光學系61具備第1偏向構件70、第1透鏡群71與第1凹面鏡72。第1偏向構件70係具有第1反射面P3與第2反射面P4之三角稜鏡。第1反射面P3係使來自偏光分束器PBS之投影光束EL2反射,使反射之投影光束EL2通過第1透鏡群71而射入第1凹面鏡72的面。第2反射面P4係使在第1凹面鏡72反射之投影光束EL2通過第1透鏡群71並射入,並將射入之投影光束EL2往投影視野光闌63反射的面。第1透鏡群71包含各種透鏡,各種透鏡之光軸配置於第2光軸BX2上。第1凹面鏡72配置於藉由複眼透鏡52生成之多數個點光源會從複眼透鏡52透過照明視野光闌55達到第1凹面鏡72之各種透鏡而成像的光瞳面。 The first optical system 61 and the second optical system 62 are telecentric catadioptric optical systems obtained by deforming, for example, a Dyson system. The optical axis of the first optical system 61 (hereinafter, referred to as the second optical axis BX2) is substantially orthogonal to the center plane CL. The first optical system 61 includes a first deflection member 70 , a first lens group 71 , and a first concave mirror 72 . The 1st deflection|deviation member 70 has the triangle of the 1st reflection surface P3 and the 2nd reflection surface P4. The first reflection surface P3 is a surface that reflects the projection light beam EL2 from the polarizing beam splitter PBS, and makes the reflected projection light beam EL2 pass through the first lens group 71 and enter the first concave mirror 72 . The second reflection surface P4 is a surface that allows the projection light beam EL2 reflected by the first concave mirror 72 to pass through the first lens group 71 to be incident, and reflects the incident projection light beam EL2 to the projection view stop 63 . The first lens group 71 includes various lenses, and the optical axes of the various lenses are arranged on the second optical axis BX2. The first concave mirror 72 is disposed on the pupil plane where the plurality of point light sources generated by the fly-eye lens 52 pass through the illumination field stop 55 and reach various lenses of the first concave mirror 72 from the fly-eye lens 52 to form an image.

來自偏光分束器PBS之投影光束EL2在第1偏向構件70之第1反射面P3反射,通過第1透鏡群71之上半部之視野區域而射入第1凹面鏡72。射入第1凹面鏡72之投影光束EL2在第1凹面鏡72反射,通過第1透鏡群71之下半部之視野區域而射入第1偏向構件70之第2反射面P4。射入第2反射面P4之投影光束EL2在第2反射面P4反射,通過聚焦修正光學構件64及像偏移用光學構件65而射入投影 視野光闌63。 The projection light beam EL2 from the polarization beam splitter PBS is reflected on the first reflection surface P3 of the first deflection member 70 , passes through the viewing area of the upper half of the first lens group 71 , and enters the first concave mirror 72 . The projection light beam EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72 , passes through the viewing area of the lower half of the first lens group 71 , and enters the second reflection surface P4 of the first deflection member 70 . The projection light beam EL2 incident on the second reflection surface P4 is reflected on the second reflection surface P4, and is incident and projected through the focus correction optical member 64 and the image shift optical member 65 Field diaphragm 63.

投影視野光闌63具有規定投影區域PA之形狀的開口。亦即,投影視野光闌63之開口形狀規定投影區域PA之形狀。因此,在能將圖4所示之照明光學系IL內之照明視野光闌55之開口形狀設為與投影區域PA之形狀(梯形)形狀相似之時,能省略投影視野光闌63。又,在將照明視野光闌55之開口形狀設為包含投影區域PA之長方形時,必須有用以規定梯形投影區域PA之投影視野光闌63。 The projection field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the shape of the projection area PA. Therefore, when the opening shape of the illumination field stop 55 in the illumination optical system IL shown in FIG. 4 can be made similar to the shape (trapezoid) of the projection area PA, the projection field stop 63 can be omitted. Furthermore, when the opening shape of the illumination field stop 55 is a rectangle including the projection area PA, the projection field stop 63 for defining the trapezoidal projection area PA is required.

第2光學系62係與第1光學系61相同之構成,隔著中間像面P7與第1光學系61對稱設置。第2光學系62,其光軸(以下,稱第3光軸BX3)相對中心面CL實質正交,與第2光軸BX2成平行。第2光學系62具備第2偏向構件80、第2透鏡群81與第2凹面鏡82。第2偏向構件80具有第3反射面P5與第4反射面P6。第3反射面P5係使來自投影視野光闌63之投影光束EL2反射,使反射之投影光束EL2通過第2透鏡群81而射入第2凹面鏡82的面。第4反射面P6係使在第2凹面鏡82反射之投影光束EL2通過第2透鏡群81而射入,並將射入之投影光束EL2往投影區域PA反射的面。第2透鏡群81包含各種透鏡,各種透鏡之光軸配置於第3光軸BX3上。第2凹面鏡82配置於在第1凹面鏡72成像之多數個點光源像會從第1凹面鏡72透過投影視野光闌63達到第2凹面鏡82之各種透鏡而成像的光瞳面。 The second optical system 62 has the same configuration as the first optical system 61, and is provided symmetrically with the first optical system 61 across the intermediate image plane P7. The optical axis of the second optical system 62 (hereinafter, referred to as the third optical axis BX3) is substantially orthogonal to the center plane CL, and is parallel to the second optical axis BX2. The second optical system 62 includes a second deflection member 80 , a second lens group 81 , and a second concave mirror 82 . The second deflection member 80 has a third reflection surface P5 and a fourth reflection surface P6. The third reflection surface P5 is a surface which reflects the projection light flux EL2 from the projection field stop 63 , and makes the reflected projection light flux EL2 pass through the second lens group 81 and enter the second concave mirror 82 . The fourth reflection surface P6 is a surface that allows the projection light beam EL2 reflected by the second concave mirror 82 to pass through the second lens group 81 to be incident, and reflects the incident projection light beam EL2 toward the projection area PA. The second lens group 81 includes various lenses, and the optical axes of the various lenses are arranged on the third optical axis BX3. The second concave mirror 82 is disposed on the pupil plane where the plurality of point light source images formed on the first concave mirror 72 pass through the projection field stop 63 and reach various lenses of the second concave mirror 82 from the first concave mirror 72 to be formed.

來自投影視野光闌63之投影光束EL2在第2偏向構件80之第3反射面P5反射,通過第2透鏡群81之上半部之視野區域而射入第2凹面鏡82。射入第2凹面鏡82之投影光束EL2在第2凹面鏡82反射,通過第2透鏡群81之下半部之視野區域而射入第2偏向構件80之第4反射面P6。射入第4反射面P6之投影光束EL2在第4反射面P6反射,通過倍率修正用光學構件66而射入投影區域PA。藉此,在照明區域IR之光罩圖案之像係以等倍(×1)投影於投影區域PA。 The projection light beam EL2 from the projection view stop 63 is reflected on the third reflection surface P5 of the second deflection member 80 , passes through the viewing area of the upper half of the second lens group 81 , and enters the second concave mirror 82 . The projection light beam EL2 incident on the second concave mirror 82 is reflected by the second concave mirror 82 , passes through the viewing area of the lower half of the second lens group 81 , and enters the fourth reflection surface P6 of the second deflection member 80 . The projection light beam EL2 which entered the 4th reflection surface P6 is reflected by the 4th reflection surface P6, and is made into the projection area|region PA by the optical member 66 for magnification correction. Thereby, the image of the mask pattern in the illumination area IR is projected on the projection area PA at the same magnification (×1).

聚焦修正光學構件64配置在第1偏向構件70與投影視野光闌63之 間。聚焦修正光學構件64係調整投影於基板P上之光罩圖案像之聚焦狀態。聚焦修正光學構件64,例如係將2片楔形稜鏡顛倒(圖4中於X方向顛倒)重疊成整體為透明之平行平板。將此1對稜鏡在不改變彼此對向之面間之間隔的情形下滑向斜面方向,即能改變作為平行平板之厚度。據此,即能微調第1光學系61之實效光路長,對形成於中間像面P7及投影區域PA之光罩圖案像之對焦狀態進行微調。 The focus correction optical member 64 is arranged between the first deflection member 70 and the projection field diaphragm 63 between. The focus correction optical member 64 adjusts the focus state of the mask pattern image projected on the substrate P. For example, the focus correction optical member 64 is formed by overlapping two wedge-shaped wedges upside down (reversed in the X direction in FIG. 4 ) to form a transparent parallel flat plate as a whole. The thickness of the parallel flat plate can be changed by sliding the pair of poles in the direction of the inclined plane without changing the distance between the opposing surfaces. Accordingly, the effective optical path length of the first optical system 61 can be fine-tuned, and the focusing state of the mask pattern image formed on the intermediate image plane P7 and the projection area PA can be fine-tuned.

像偏移用光學構件65配置在第1偏向構件70與投影視野光闌63之間。像偏移用光學構件65,可調整投影於基板P上之光罩圖案之像在像面內微幅移動。像偏移用光學構件65由圖4之在XZ面內可傾斜之透明的平行平板玻璃、與圖4之在YZ面內可傾斜之透明的平行平板玻璃構成。藉由調整該2片平行平板玻璃之各傾斜量,即能使形成於中間像面P7及投影區域PA之光罩圖案之像於X方向及Y方向微幅偏移。 The optical member 65 for image shift is arranged between the first deflection member 70 and the projection field stop 63 . The optical member 65 for image shift can adjust the image of the mask pattern projected on the substrate P to move slightly within the image plane. The optical member 65 for image shift is composed of a transparent parallel flat glass which can be tilted in the XZ plane of FIG. 4 and a transparent parallel flat glass which can be tilted in the YZ plane in FIG. 4 . By adjusting the respective inclination amounts of the two parallel flat glasses, the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction and the Y direction.

倍率修正用光學構件66配置在第2偏向構件70與基板P之間。倍率修正用光學構件66,係以例如將凹透鏡、凸透鏡、凹透鏡之3片以既定間隔同軸配置,前後之凹透鏡固定、而之間之凸透鏡可於光軸(主光線)方向移動之方式構成。據此,形成於投影區域PA之光罩圖案之像,即能在維持遠心之成像狀態之同時,等向的微幅放大或縮小。又,構成倍率修正用光學構件66之3片透鏡群之光軸,在XZ面內係傾斜而與投影光束EL2之主光線平行。 The optical member 66 for magnification correction is arrange|positioned between the 2nd deflection|deviation member 70 and the board|substrate P. The optical member 66 for magnification correction is constituted such that, for example, three concave lenses, convex lenses, and concave lenses are coaxially arranged at predetermined intervals, the front and rear concave lenses are fixed, and the convex lens in between is movable in the direction of the optical axis (principal ray). Accordingly, the image of the mask pattern formed in the projection area PA can be slightly enlarged or reduced isotropically while maintaining the telecentric imaging state. In addition, the optical axes of the three lens groups constituting the magnification correction optical member 66 are inclined in the XZ plane and are parallel to the chief ray of the projection light beam EL2.

旋轉修正機構67,例如係藉由致動器(圖示省略)使第1偏向構件70繞與第2光軸BX2垂直且與Z軸平行之軸微幅旋轉者。此旋轉修正機構67藉由使第1偏向構件70旋轉,可使形成於中間像面P7之光罩圖案之像在該中間像面P7內微幅旋轉。 The rotation correction mechanism 67 rotates the first deflection member 70 slightly around an axis perpendicular to the second optical axis BX2 and parallel to the Z axis by, for example, an actuator (not shown). The rotation correction mechanism 67 can rotate the image of the mask pattern formed on the intermediate image plane P7 slightly within the intermediate image plane P7 by rotating the first deflection member 70 .

偏光調整機構68,係例如藉由致動器(圖示省略)使1/4波長板41繞與板面正交之軸旋轉,以調整偏光方向者。偏光調整機構68藉由使1/4波長板41旋轉,可微調投射於投影區域PA之投影光束EL2之照度。 The polarization adjustment mechanism 68 adjusts the polarization direction by rotating the quarter-wave plate 41 around an axis perpendicular to the plate surface by, for example, an actuator (not shown). The polarization adjustment mechanism 68 can fine-tune the illuminance of the projection light beam EL2 projected on the projection area PA by rotating the quarter-wave plate 41 .

在以此方式構成之投影光學系PL中,來自光罩M之投影光束EL2其各主光線從照明區域IR內之光罩M之面P1以遠心狀態射出,通過1/4波長板41及偏光分束器PBS射入第1光學系61。射入第1光學系61之投影光束EL2,於第1光學系61之第1偏向構件70之第1反射面(平面鏡)P3反射,通過第1透鏡群71而在第1凹面鏡72反射。在第1凹面鏡72反射之投影光束EL2再次通過第1透鏡群71而在第1偏向構件70之第2反射面(平面鏡)P4反射,透射過聚焦修正光學構件64及像偏移用光學構件65而射入投影視野光闌63。通過投影視野光闌63之投影光束EL2,於第2光學系62之第2偏向構件80之第3反射面(平面鏡)P5反射,通過第2透鏡群81而在第2凹面鏡82反射。在第2凹面鏡82反射之投影光束EL2再次通過第2透鏡群81而在第2偏向構件80之第4反射面(平面鏡)P6反射,射入倍率修正用光學構件66。從倍率修正用光學構件66射出之投影光束EL2,射入基板P上之投影區域PA,出現在照明區域IR內之光罩圖案之像以等倍(×1)被投影於投影區域PA。 In the projection optical system PL constructed in this way, the principal rays of the projection light beam EL2 from the mask M are emitted in a telecentric state from the surface P1 of the mask M in the illumination region IR, and pass through the quarter-wave plate 41 and the polarized light. The beam splitter PBS is incident on the first optical system 61 . The projection light beam EL2 incident on the first optical system 61 is reflected on the first reflection surface (plane mirror) P3 of the first deflection member 70 of the first optical system 61 , passes through the first lens group 71 and is reflected on the first concave mirror 72 . The projection light beam EL2 reflected by the first concave mirror 72 passes through the first lens group 71 again, is reflected on the second reflection surface (plane mirror) P4 of the first deflection member 70, and is transmitted through the focus correction optical member 64 and the image shift optical member 65 Then, it enters the projection field stop 63 . The projection light beam EL2 passing through the projection field stop 63 is reflected on the third reflecting surface (plane mirror) P5 of the second deflection member 80 of the second optical system 62 , passes through the second lens group 81 and is reflected on the second concave mirror 82 . The projection light beam EL2 reflected by the second concave mirror 82 passes through the second lens group 81 again, is reflected on the fourth reflection surface (plane mirror) P6 of the second deflection member 80 , and enters the magnification correction optical member 66 . The projection light beam EL2 emitted from the magnification correction optical member 66 is incident on the projection area PA on the substrate P, and the image of the mask pattern appearing in the illumination area IR is projected on the projection area PA at equal magnification (×1).

<光罩之圖案之投影像面與基板之曝光面之關係> <Relationship between the projected image surface of the pattern of the mask and the exposure surface of the substrate>

其次,參照圖6A及圖6B說明第1實施形態之曝光裝置U3之光罩之圖案之投影像面與基板之曝光面之關係。圖6A係顯示光罩之圖案之投影像面與基板之曝光面之關係的說明圖。圖6B係概略顯示投影於投影區域內之圖案像之聚焦位置(散焦量)之變化的說明圖。 Next, the relationship between the projected image surface of the pattern of the mask and the exposure surface of the substrate of the exposure apparatus U3 of the first embodiment will be described with reference to FIGS. 6A and 6B . 6A is an explanatory diagram showing the relationship between the projected image plane of the pattern of the mask and the exposure plane of the substrate. 6B is an explanatory diagram schematically showing a change in the focus position (defocus amount) of the pattern image projected in the projection area.

曝光裝置U3係藉由投影光學系PL將投影光束EL2成像,而形成光罩M之圖案之投影像面Sm。投影像面Sm係光罩M之圖案被成像之位置,為作為最佳聚焦之位置。此處,光罩M如前所述以曲率半徑Rm之曲面(在ZX平面為曲線)配置。藉此投影像面Sm亦為曲率半徑Rm之曲面。又,曝光裝置U3中,基板P之表面為曝光面Sp。此處,所謂曝光面Sp係基板P之表面。基板P如上所述保持於圓筒形狀之基板支承圓筒25。藉此,曝光面Sp成為曲率半徑Rm之曲面(在ZX平面中為曲線)。又,投影像面Sm與曝光面Sp,係與掃描曝光方向正交之方 向為曲面的軸。 The exposure apparatus U3 forms the projection image surface Sm of the pattern of the mask M by imaging the projection light beam EL2 by the projection optical system PL. The projection image plane Sm is the position where the pattern of the mask M is imaged, which is the position of the best focus. Here, the mask M is arranged as a curved surface with a curvature radius Rm (curve in the ZX plane) as described above. Therefore, the projected image surface Sm is also a curved surface with a radius of curvature Rm. Moreover, in exposure apparatus U3, the surface of the board|substrate P is exposure surface Sp. Here, the so-called exposure surface Sp is the surface of the board|substrate P. The substrate P is held by the cylindrical substrate support cylinder 25 as described above. Thereby, the exposure surface Sp becomes a curved surface (curved in the ZX plane) of the radius of curvature Rm. In addition, the projection image surface Sm and the exposure surface Sp are orthogonal to the scanning exposure direction to the axis of the surface.

因此,如圖6A所示,投影像面Sm與曝光面Sp為相對掃描曝光方向(基板支承圓筒25之外周面之周方向)彎曲的面。是以,投影像面Sm,在投影區域PA在掃描曝光方向之曝光寬度A之兩端位置與中心位置,於投影光束EL2之主光線方向伴隨最大△Fm之面位置差彎曲,曝光面Sp,在投影區域PA在掃描曝光方向之曝光寬度A之兩端位置與中心位置,於投影光束EL2之主光線方向伴隨最大△Fp之面位置差彎曲。此處,曝光裝置U3如圖6A所示,以相對投影像面Sm、實際曝光時所位於之曝光面Sp(基板P之表面)成為實際曝光面Spa之方式,光罩M之第1軸AX1與基板支承圓筒25之第2軸AX2軸支於曝光裝置本體。 Therefore, as shown in FIG. 6A , the projected image surface Sm and the exposure surface Sp are curved surfaces with respect to the scanning exposure direction (the circumferential direction of the outer peripheral surface of the substrate support cylinder 25 ). Therefore, the projection image plane Sm is curved in the projection area PA at both ends and the center position of the exposure width A in the scanning exposure direction, in the principal ray direction of the projection beam EL2 with the maximum ΔFm plane position difference, and the exposure plane Sp, At both ends and the center position of the exposure width A in the scanning exposure direction of the projection area PA, the projection area PA is curved with the maximum ΔFp surface position difference in the chief ray direction of the projection beam EL2. Here, as shown in FIG. 6A , the exposure device U3 has the first axis AX1 of the mask M so that the exposure surface Sp (the surface of the substrate P) on which the actual exposure is located becomes the actual exposure surface Spa with respect to the projected image surface Sm. The second axis AX2 of the substrate supporting cylinder 25 is pivotally supported on the exposure apparatus body.

實際曝光面Spa,在掃描曝光方向中,於與投影像面Sm相異之兩個位置FC1,FC2相交。此外,曝光裝置U3能藉由調整投影光學系PL之各光學構件位置、或藉由光罩保持機構11及基板支承機構12之任一方微調光罩M與基板P之間隔、或調整聚焦修正光學構件64,來使相對於投影像面Sm之實際曝光面Spa之法線方向(聚焦調整方向)之位置變化。 The actual exposure surface Spa intersects at two positions FC1 and FC2 different from the projection image surface Sm in the scanning exposure direction. In addition, the exposure device U3 can adjust the position of each optical member of the projection optical system PL, fine-tune the distance between the mask M and the substrate P by either of the mask holding mechanism 11 and the substrate support mechanism 12, or adjust the focus correction optics. The member 64 changes the position of the normal line direction (focus adjustment direction) of the actual exposure surface Spa with respect to the projection image surface Sm.

投影像面Sm與實際曝光面Spa係設定為在投影區域PA之掃描曝光方向之曝光寬度A內在不同之2個位置FC1,FC2之各個相交。是以,在曝光寬度A內之位置FC1與位置FC2之各個,光罩M之圖案像以最佳聚焦狀態投影曝光於基板P之表面。又,在曝光寬度A內之位置FC1與位置FC2之間之區域,成為被投影之圖案像之最佳聚焦面(投影像面Sm)位於較實際曝光面Spa後方之後焦點狀態,在較位置FC1與位置FC2之間更外側之區域,成為被投影之圖案像之最佳聚焦面(投影像面Sm)位於較實際曝光面Spa前方之前焦點狀態。 The projected image surface Sm and the actual exposure surface Spa are set to intersect each of two different positions FC1 and FC2 within the exposure width A in the scanning exposure direction of the projection area PA. Therefore, at each of the position FC1 and the position FC2 within the exposure width A, the pattern image of the mask M is projected and exposed on the surface of the substrate P in the best focus state. In addition, the area between the position FC1 and the position FC2 within the exposure width A becomes the best focus surface (projected image surface Sm) of the projected pattern image, after the focus state is located behind the actual exposure surface Spa, and is in a more focused state than the position FC1 The outer area between the position FC2 and the position FC2 becomes the best focus state of the projected pattern image (projection image surface Sm), which is in a focus state before the actual exposure surface Spa.

亦即,在沿著實際曝光面Spa,基板P之表面從曝光寬度A之一方之端部As往另一方之端部Ae之場合,基板P上之圖案像,在曝光開始時之端部As之位置係伴隨既定之散焦量被曝光,其後,隨著時間經過散焦量減少,在位 置FC1以最佳聚焦(散焦量為零)被曝光。在越過在位置FC1之最佳聚焦狀態後,散焦量往反方向增加,在曝光寬度A之中心位置FC3成為最大之散焦量。以曝光寬度A之中心位置FC3作為回折點,其後散焦量減少,在位置FC2再度以最佳聚焦狀態將圖案像曝光於基板P上。在越過在位置FC2之最佳聚焦狀態後,散焦量再度增加,在另一方之端部Ae,圖案像之曝光結束。如上述般,在位置FC1與位置FC2之間之區域、與在較位置FC1與位置FC2之間更外側之區域,散焦之方向、亦即散焦之符合係相異。 That is, when the surface of the substrate P goes from the end As on one side of the exposure width A to the end Ae on the other side along the actual exposure surface Spa, the pattern image on the substrate P is at the end As at the start of exposure. The position is exposed with a predetermined amount of defocusing, and after that, the amount of defocusing decreases over time, and the position Set FC1 to be exposed with best focus (zero defocus amount). After the optimal focus state at the position FC1 is exceeded, the defocus amount increases in the opposite direction, and becomes the maximum defocus amount at the center position FC3 of the exposure width A. Taking the center position FC3 of the exposure width A as the turning point, the amount of defocusing decreases thereafter, and the pattern image is exposed on the substrate P again in the best focus state at the position FC2. After the optimal focus state at the position FC2 is passed, the defocus amount increases again, and the exposure of the pattern image ends at the other end Ae. As described above, in the region between the position FC1 and the position FC2, and the region further outside than between the position FC1 and the position FC2, the direction of the defocus, that is, the coincidence of the defocus is different.

如以上所述,在基板P從投影區域PA之曝光寬度A之端部As至端部Ae以一定之周速度移動之期間,投影於基板P上之圖案像中之各點,如圖6B所示,在前焦點狀態(位置As)開始曝光,以最佳聚焦狀態(位置FC1)、後焦點狀態(位置FC3)、最佳聚焦狀態(位置FC2)、前焦點狀態(位置Ae)之順序一邊連續變化一邊曝光於基板P上。圖6B之縱軸之聚焦位置(或散焦量)之零係投影像面Sm之位置與實際曝光面Spa之位置之差分(Sm-Spa)為零的最佳聚焦狀態。此外,圖6B之橫軸雖係表示曝光寬度A之直線位置,但亦可為基板支承圓筒25之外周面之周長方向之位置。 As described above, when the substrate P moves at a constant peripheral speed from the end As to the end Ae of the exposure width A of the projection area PA, each point in the pattern image projected on the substrate P is as shown in FIG. 6B . As shown, exposure starts at the front focus state (position As), and the best focus state (position FC1), the back focus state (position FC3), the best focus state (position FC2), and the front focus state (position Ae) are in this order. Exposure to the substrate P while continuously changing. The zero of the focus position (or defocus amount) on the vertical axis of FIG. 6B is the optimal focus state in which the difference (Sm-Spa) between the position of the projected image surface Sm and the position of the actual exposure surface Spa is zero. In addition, although the horizontal axis of FIG. 6B represents the linear position of the exposure width A, the position in the circumferential direction of the outer peripheral surface of the substrate support cylinder 25 may also be used.

在曝光寬度A之端部As,Ae之前焦點狀態(正方向)之散焦量、在中心位置FC3之後焦點狀態(負方向)之散焦量,可依據投影光學系PL之成像性能(解像力、焦深)、投影區域PA之曝光寬度A、待投影之光罩圖案之最小尺寸、光罩M之面P1(投影像面Sm)之曲率半徑Rm、基板支承圓筒25之外周面(基板P上之曝光面Spa)之曲率半径Rp來決定較佳的範圍。具體之數值例雖於後述,但可如上述般,藉由於涵蓋曝光寬度A之掃描曝光之期間連續改變聚焦狀態,能擴大光罩圖案中之特別是單獨之細線或離散之接觸孔(通孔)等之孤立圖案之外觀上之焦深。 The defocus amount in the focus state (positive direction) before the end As, Ae of the exposure width A and the defocus amount in the focus state (negative direction) after the center position FC3 can be determined according to the imaging performance of the projection optical system PL (resolution, The depth of focus), the exposure width A of the projection area PA, the minimum size of the mask pattern to be projected, the radius of curvature Rm of the surface P1 (projection image surface Sm) of the mask M, the outer peripheral surface of the substrate support cylinder 25 (substrate P The preferred range is determined by the curvature radius Rp of the upper exposure surface Spa). Specific numerical examples will be described later, but as described above, by continuously changing the focus state during the scanning exposure covering the exposure width A, it is possible to enlarge, in particular, individual thin lines or discrete contact holes (through holes) in the mask pattern. ), etc., the depth of focus on the appearance of isolated patterns.

又,本實施形態中,藉由將光罩M之面P1與基板P之表面作成圓 筒形状,能對光罩圖案投影於基板P側之掃描曝光方向之投影像面與被曝光之基板之曝光面賦予圓筒形状差。因此,曝光裝置U3僅透過光罩M與基板支承圓筒25之旋轉運動,即能對應於投影區域PA內之掃描曝光方向之位置使聚焦狀態連續地變化,進而能抑制相對於實質聚焦之像對比變化。又,本實施形態中,在投影區域PA內,由於將曝光寬度A設定成在掃描曝光方向之兩處成為最佳聚焦,因此能縮小在曝光寬度A內之平均散焦量,且增大曝光寬度A。藉此,在縮小投影光束EL2之照度之場合,或者在增快掃描曝光方向之光罩M或基板P之掃描速度之場合均能確保適當之曝光量,藉此能以高生產効率處理基板。又,由於能相對於曝光寬度縮小平均之散焦量,因此亦能維持品質。 In addition, in this embodiment, the surface P1 of the mask M and the surface of the substrate P are formed into a circle The cylindrical shape can provide a cylindrical shape difference between the projected image surface in the scanning exposure direction in which the mask pattern is projected on the substrate P side and the exposure surface of the substrate to be exposed. Therefore, only through the rotational movement of the mask M and the substrate support cylinder 25, the exposure device U3 can continuously change the focus state corresponding to the position of the scanning exposure direction in the projection area PA, thereby suppressing the image relative to the substantial focus Contrast changes. In addition, in the present embodiment, in the projection area PA, since the exposure width A is set so that the best focus is achieved at two places in the scanning exposure direction, the average defocus amount within the exposure width A can be reduced, and the exposure can be increased. width A. Thereby, when the illuminance of the projection beam EL2 is reduced, or when the scanning speed of the mask M or the substrate P in the scanning exposure direction is increased, an appropriate exposure amount can be ensured, and the substrate can be processed with high production efficiency. In addition, since the average defocus amount can be reduced with respect to the exposure width, the quality can also be maintained.

本實施形態中,係對應於曝光寬度A之座標位置(周長位置)使聚焦位置不同地曝光,其結果,在曝光寬度A中以不同之聚焦狀態投影於基板P上之圖案像之所積算之像,成為基板P之曝光面上所形成之最終之像強度分布。此處雖會說明所積算之像,但為了使說明簡單,首先以點像強度分布說明其概念。概略而言,點像強度分布為其對比與相關關係。在往光軸方向(聚焦變化方向)散焦z後之位置之點像強度分布I(z)為下式。此處,將λ設為照明光束EL1之波長,將NA設為投影光學系PL之基板側之數值孔徑,將I0設為在理想之最佳聚焦位置之強度分布,而為△Dz=(π/2/λ)×NA2×z時,點像強度分布I(z)則成為I(z)=[siN(△Dz)/(△Dz)]2×I0In the present embodiment, the focus positions are exposed differently corresponding to the coordinate positions (peripheral length positions) of the exposure width A. As a result, the pattern images projected on the substrate P in the different focus states within the exposure width A are accumulated. The image becomes the final image intensity distribution formed on the exposure surface of the substrate P. Although the accumulated image will be described here, in order to simplify the description, first, the concept will be described with reference to the intensity distribution of the point image. Roughly speaking, the point image intensity distribution is its contrast and correlation. The point image intensity distribution I(z) at the position after defocusing z in the optical axis direction (focus change direction) is given by the following formula. Here, the wavelength λ is set to the illumination beam EL1, the substrate will be set to a value NA of the projection optical system PL side of the aperture, I 0 the intensity distribution over the set of the best focus position, and for the △ Dz = ( When π/2/λ)×NA 2 ×z, the point image intensity distribution I(z) becomes I(z)=[siN(ΔDz)/(ΔDz)] 2 ×I 0 .

若使用如上之點像強度分布I(z),即可求出曝光寬度A量之積算值(或平均值),進而,於橫軸取在實際之中心位置(圖6A中之中心位置FC3)之散焦量,能模擬求出各散焦量之強度分布。據此,能藉由以曝光裝置U3調整聚焦狀態(投影像面Sm與實際曝光面Spa之位置關係),將曝光時所得到之圖案像之強度分布(像對比)調整成最佳狀態。 If the above point image intensity distribution I(z) is used, the accumulated value (or average value) of the exposure width A can be obtained, and then the horizontal axis is taken at the actual center position (center position FC3 in FIG. 6A ) The defocus amount can be simulated to obtain the intensity distribution of each defocus amount. Accordingly, by adjusting the focus state (positional relationship between the projected image surface Sm and the actual exposure surface Spa) by the exposure device U3, the intensity distribution (image contrast) of the pattern image obtained during exposure can be adjusted to the optimum state.

又,一般而言投影光學系PL之解像力R與焦深DOF係以下式表示。 In addition, in general, the resolution R and the depth of focus DOF of the projection optical system PL are represented by the following equations.

R=k1‧λ/NA (0<k1≦1) R=k1‧λ/NA (0<k1≦1)

DOF=k2‧λ/NA2 (0<k2≦1) DOF=k2‧λ/NA 2 (0<k2≦1)

此處,k1,k2雖係會因曝光條件或感光材料(光阻等)、或者曝光後之顯影處理或成膜處理而可能改變之係數,但解像力R之k1因數係大約0.4≦k1≦0.8之範圍,焦深DOF之k2因數能表示為大約k2≒1。 Here, k1 and k2 are coefficients that may be changed due to exposure conditions, photosensitive materials (photoresist, etc.), or development treatment or film formation treatment after exposure, but the k1 coefficient of the resolution R is about 0.4≦k1≦0.8 In the range of , the k2 factor of the depth of focus DOF can be expressed as approximately k2≒1.

基於此種投影光學系PL之焦深DOF之定義,本實施形態中,較佳為先調整成近似地滿足以下之關係式。 Based on the definition of the depth of focus DOF of the projection optical system PL, in the present embodiment, it is preferable to first adjust to approximately satisfy the following relational expression.

Figure 109113021-A0305-02-0031-3
Figure 109113021-A0305-02-0031-3

此處,△Rm,△Rp係根據投影像面Sm(光罩M之面P1)之曲率半徑Rm、基板P之表面(實際曝光面Spa)之曲率半徑Rp、以及曝光寬度A,分別以以下之式求出。 Here, ΔRm and ΔRp are based on the radius of curvature Rm of the projected image surface Sm (surface P1 of the mask M), the radius of curvature Rp of the surface of the substrate P (actual exposure surface Spa), and the exposure width A, respectively as follows ask for it.

Figure 109113021-A0305-02-0031-4
Figure 109113021-A0305-02-0031-4

Figure 109113021-A0305-02-0031-5
Figure 109113021-A0305-02-0031-5

從此式可明確得知,△Rm與△Rp係各別表示圖6A所示之△Fm、△Fp。又,上述之關係式1較佳為進一步滿足DOF<(△Rm+△Rp)。在本實施形態之曝光裝置U3,雖以滿足上述之關係式1之方式決定曝光寬度A、曲率半徑Rm、Rp,但藉由滿足上述之關係式1,能維持形成於基板P上之顯示面板用之各種圖案之品質(線寬精度、位置精度、重疊精度等),同時提高生產性。針對此點,將以第2實施形態詳細說明。 As is clear from this formula, ΔRm and ΔRp represent ΔFm and ΔFp shown in FIG. 6A , respectively. In addition, it is preferable that the above-mentioned relational expression 1 further satisfies DOF<(ΔRm+ΔRp). In the exposure apparatus U3 of the present embodiment, although the exposure width A, the radius of curvature Rm, and Rp are determined so as to satisfy the above-mentioned relational expression 1, the display panel formed on the substrate P can be maintained by satisfying the above-mentioned relational expression 1. Use the quality of various patterns (line width accuracy, position accuracy, overlapping accuracy, etc.), while improving productivity. In this regard, the second embodiment will be described in detail.

又,本實施形態中,將在曝光寬度A內之散焦量之變化範圍、亦即圖6B所示之在端部As,Ae之正方向之散焦量與在曝光寬度A之中心位置FC3之負方向之散焦量之差設為△DA時,從與投影光學系PL之焦深DOF之關係來看,較佳為設定成滿足0.5≦(△DA/DOF)≦3之關係,進而更佳為滿足1≦(△DA/DOF)。藉由將曝光裝置U3設定成滿足此關係,能維持形成於基板P上之顯示面板用之各種圖案之品質(線寬精度、位置精度、重疊精度等),同時提高生產性。針對此點,將以第2實施形態詳細說明。 In addition, in this embodiment, the variation range of the defocus amount within the exposure width A, that is, the defocus amount in the positive direction of the end portions As and Ae shown in FIG. 6B, and the center position FC3 of the exposure width A are When the difference of the defocus amount in the negative direction is set as ΔDA, it is preferable to set the relationship with the depth of focus DOF of the projection optical system PL so as to satisfy the relationship of 0.5≦(ΔDA/DOF)≦3, and further More preferably, 1≦(ΔDA/DOF) is satisfied. By setting the exposure device U3 to satisfy this relationship, the quality (line width accuracy, position accuracy, overlapping accuracy, etc.) of various patterns for display panels formed on the substrate P can be maintained, and productivity can be improved. In this regard, the second embodiment will be described in detail.

又,曝光裝置U3如本實施形態之圖6B所示,較佳為設定成光罩M之圖案之投影像面Sm與基板P之實際曝光面Spa在掃描曝光方向之差以投影區域PA之曝光寬度A之中心位置FC3作為軸變化成線對稱(在圖6B為左右對稱)。 In addition, as shown in FIG. 6B of the present embodiment, the exposure device U3 is preferably set so that the difference in the scanning exposure direction between the projected image surface Sm of the pattern of the mask M and the actual exposure surface Spa of the substrate P is used to expose the projected area PA. The center position FC3 of the width A is changed to be line-symmetrical as an axis (left-right symmetry in FIG. 6B ).

又,本實施形態中,如圖6B所示,亦可將在投影區域PA之曝光寬度A內散焦量為正之端部As至位置FC1之區間與從位置FC2至端部Ae之區間中將正方向之散焦量積分後的值(絕對值)、與散焦量為負之位置FC1至位置FC2之區間中將負方向之散焦量積分後的值(絕對值)比較後,以兩者大致相等之方式設定投影像面Sm與實際曝光面Spa之位置關係。 In this embodiment, as shown in FIG. 6B , in the exposure width A of the projection area PA, the amount of defocusing is positive in the section from the end As to the position FC1 and the section from the position FC2 to the end Ae. The integrated value (absolute value) of the defocus amount in the positive direction is compared with the integrated value (absolute value) of the defocus amount in the negative direction in the interval from the position FC1 to the position FC2 where the defocus amount is negative. The positional relationship between the projected image surface Sm and the actual exposure surface Spa is set in such a manner that they are approximately equal.

本實施形態之曝光裝置U3,係將複數個投影光學模組PLM於掃描曝光方向以至少兩列配置,於正交於掃描曝光方向之Y方向,使相鄰之投影光學模組PLM之投影區域PA之端部(三角形部分)彼此重疊,以將光罩M之圖案接合於Y方向來曝光。藉此,可抑制因在Y方向相鄰之兩個投影區域PA間之接合部(重疊區域)之圖案像之對比或曝光量相異而產生之帶狀不均產生。本實施形態中,除此之外,由於係以在實際曝光面Spa(基板P之表面)上之投影區域PA內之掃描曝光方向能形成兩處最佳聚焦位置(位置FC1、位置FC2)之方式設定投影像面Sm與實際曝光面Spa之位置關係,因此能縮小因在掃描曝光中投影像面Sm與實際曝光面Spa之位置關係些許變動之動態散焦而產生之像對比的變化。因此,亦能縮小 在相鄰之投影區域PA間之重疊區域產生之像對比之差,能製造出接合部不明顯之高品質之可撓性顯示面板。 In the exposure device U3 of the present embodiment, a plurality of projection optical modules PLM are arranged in at least two rows in the scanning exposure direction, in the Y direction orthogonal to the scanning exposure direction, so that the projection areas of adjacent projection optical modules PLM Ends (triangular portions) of the PA overlap each other to bond the pattern of the mask M in the Y direction for exposure. Thereby, the generation|occurrence|production of the strip|belt-shaped unevenness which arises by the contrast of the pattern image of the junction part (overlap area) between two adjacent projection areas PA in the Y direction or exposure amount difference can be suppressed. In this embodiment, in addition to this, since the scanning exposure direction in the projection area PA on the actual exposure surface Spa (the surface of the substrate P) can form one of the two optimal focus positions (position FC1, position FC2) Since the positional relationship between the projected image surface Sm and the actual exposure surface Spa is set in this way, the change in image contrast caused by dynamic defocusing due to slight changes in the positional relationship between the projected image surface Sm and the actual exposure surface Spa during scanning exposure can be reduced. Therefore, it can also be reduced The difference in image contrast generated in the overlapping area between the adjacent projection areas PA can produce a high-quality flexible display panel with inconspicuous joints.

如本實施形態所示,在將複數個投影光學模組PLM之各投影區域PA排列於與掃描曝光方向(X方向)正交之Y方向時,於各投影區域PA之掃描曝光方向之寬度中將在基板P上之照度(曝光用光之強度)積算後的積算值,較佳為在與掃描曝光方向正交之Y方向之任一位置均大致一定。此外,在於Y方向相鄰之兩個投影區域PA之端部局部重疊之部分(三角形之重疊區域),亦設定為在一方三角形區域之積算值與在另一方三角形區域之積算值的合計與在不重疊之區域之積算值相同。藉此,能抑制在與掃描曝光方向正交之方向中曝光量變化。 As shown in this embodiment, when each projection area PA of a plurality of projection optical modules PLM is arranged in the Y direction orthogonal to the scanning exposure direction (X direction), in the width of each projection area PA in the scanning exposure direction The integrated value obtained by integrating the illuminance (intensity of exposure light) on the substrate P is preferably substantially constant at any position in the Y direction orthogonal to the scanning exposure direction. In addition, the portion where the ends of the two adjacent projection areas PA in the Y direction partially overlap (the overlapping area of the triangle) is also set as the sum of the accumulated value in one triangle area and the accumulated value in the other triangle area and the The cumulative value of non-overlapping areas is the same. Thereby, the exposure amount change in the direction orthogonal to the scanning exposure direction can be suppressed.

又,曝光裝置U3,藉由將投影像面Sm及曝光面Sp(實際曝光面Spa)作成圓筒面,而可如本實施形態所示,即使於掃描曝光方向配置複數個投影光學模組PLM(配置奇數個與偶數個之兩列),由於在各個投影光學模組PLM中投影像面Sm及曝光面Sp(實際曝光面Spa)之關係均相同,因此能將該等之關係一起調整。如通常之多透鏡方式之投影曝光裝置般,在投影像面及曝光面為平面之場合,例如在奇數個投影光學模組之投影區域中若為了擴大焦深而使曝光面(平面基板之表面)相對投影像面傾斜,則在偶數個投影光學模組之投影區域則會產生難以容許之較大散焦。相對於此,如本實施形態所示,藉由將投影像面Sm及曝光面Sp(實際曝光面Spa)作成圓筒面,於掃描曝光方向排列之兩列投影光學模組PLM之在各投影區域PA之聚焦調整,能透過圓筒狀之光罩M之旋轉中心之第1軸AX1與基板支承圓筒25之旋轉中心之第1軸AX1在Z方向之間隔、或各個投影光學模組PLM內之倍率修正用光學構件66之調整來簡單地實現。藉此,能以簡單之裝置構成抑制相對於散焦之像對比變化。由於能抑制像對比變化同時增大掃描曝光區域之曝光寬度,因此生產效率亦提升。 Furthermore, in the exposure apparatus U3, by forming the projection image surface Sm and the exposure surface Sp (actual exposure surface Spa) as cylindrical surfaces, as shown in the present embodiment, a plurality of projection optical modules PLM can be arranged in the scanning exposure direction. (The odd-numbered and even-numbered two rows are arranged.) Since the relationship between the projection image surface Sm and the exposure surface Sp (actual exposure surface Spa) is the same in each projection optical module PLM, these relationships can be adjusted together. Like a conventional multi-lens projection exposure apparatus, when the projection image surface and the exposure surface are flat, for example, in the projection area of an odd number of projection optical modules, the exposure surface (the surface of the flat substrate) is used to enlarge the depth of focus. ) is inclined with respect to the projection image plane, then in the projection area of the even-numbered projection optical modules, an unacceptably large defocus will occur. On the other hand, as shown in the present embodiment, by making the projection image surface Sm and the exposure surface Sp (actual exposure surface Spa) a cylindrical surface, two rows of projection optical modules PLM arranged in the scanning exposure direction are projected at each The focus adjustment of the area PA can be performed through the interval between the first axis AX1 of the rotation center of the cylindrical mask M and the first axis AX1 of the rotation center of the substrate support cylinder 25 in the Z direction, or the distance between each projection optical module PLM The internal magnification correction is easily realized by adjusting the optical member 66 . Thereby, it is possible to suppress the change of the contrast of the image with respect to the defocus with a simple device configuration. Since the image contrast variation can be suppressed and the exposure width of the scanning exposure area can be increased, the production efficiency is also improved.

[第2實施形態] [Second Embodiment]

其次,參照圖7說明第2實施形態之曝光裝置U3a。此外,為了避免重複之記載,係針對與第1實施形態相異之部分加以說明,對與第1實施形態相同之構成要素係賦予與第1實施形態相同符號加以說明。圖7係顯示第2實施形態之曝光裝置(基板處理裝置)之整體構成的圖。第1實施形態之曝光裝置U3雖係以圓筒狀之基板支承圓筒25保持通過投影區域之基板P之構成,但第2實施形態之曝光裝置U3a係將基板P保持於能將基板P支承成平面狀並能移動的基板支承機構12a之構成。 Next, the exposure apparatus U3a of 2nd Embodiment is demonstrated with reference to FIG. In addition, in order to avoid repetition of description, the part different from 1st Embodiment is demonstrated, and the same code|symbol as 1st Embodiment is attached|subjected to the same component as 1st Embodiment and demonstrated. FIG. 7 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the second embodiment. The exposure apparatus U3 of the first embodiment is configured to hold the substrate P passing through the projection area by the cylindrical substrate support cylinder 25, but the exposure apparatus U3a of the second embodiment holds the substrate P so that the substrate P can be supported. The structure of the board support mechanism 12a which is flat and movable.

第2實施形態之曝光裝置U3a中,基板支承機構12a具備平面狀保持基板P之基板載台102與將基板載台102在與中心面CL正交之面內沿著X方向掃描移動之移動裝置(圖示略)。因此,基板P除了可係可撓性之薄片(PET、PEN等樹脂模、極薄之彎曲剝離面、薄金屬製之箔等)以外,亦可係幾乎不彎曲之葉片之玻璃基板。 In the exposure apparatus U3a of the second embodiment, the substrate support mechanism 12a includes a substrate stage 102 that holds the substrate P in a planar shape, and a moving device that scans and moves the substrate stage 102 in the X direction within a plane orthogonal to the center plane CL (illustration omitted). Therefore, the substrate P can be not only a flexible sheet (resin mold such as PET, PEN, etc., a very thin curved peeling surface, a thin metal foil, etc.), but also a glass substrate of a blade with almost no bending.

圖7之基板P之支承面P2由於係實質上與XY面平行之平面(曲率半徑∞),因此從光罩M反射而通過投影光學模組PLM並投射於基板P之投影光束EL2與XY面成垂直。 Since the supporting surface P2 of the substrate P in FIG. 7 is a plane substantially parallel to the XY plane (curvature radius ∞), the projection beam EL2 and the XY plane are reflected from the mask M and passed through the projection optical module PLM and projected on the substrate P and the XY plane. into vertical.

又,第2實施形態中亦與先前之圖2同樣地,在XZ面內觀察時,從圓筒狀之光罩M上之照明區域IR1(及IR3、IR5)之中心點至照明區域IR2(及IR4、IR6)之中心點的周長與順著支承面P2之基板P上之投影區域PA1(及PA3、PA5)之中心點至第2投影區域PA2(及PA4、PA6)之中心點的在X方向之直線距離,係設定成實質相等。 Also, in the second embodiment, similarly to the previous FIG. 2, when viewed in the XZ plane, from the center point of the illumination region IR1 (and IR3, IR5) on the cylindrical mask M to the illumination region IR2 ( and the perimeter of the center point of IR4, IR6) and the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the supporting surface P2 to the center point of the second projection area PA2 (and PA4, PA6) The linear distances in the X direction are set to be substantially equal.

圖7中之曝光裝置U3a亦同樣地,下位控制裝置16控制基板支承機構12之移動裝置(掃描曝光用之線性馬達或微動用之致動器等),與光罩保持圓筒21之旋轉同步地驅動基板載台102。 Similarly to the exposure device U3a in FIG. 7 , the lower control device 16 controls the moving device of the substrate support mechanism 12 (a linear motor for scanning exposure, an actuator for micro-movement, etc.) to synchronize with the rotation of the mask holding cylinder 21 The substrate stage 102 is driven.

其次,參照圖8說明第2實施形態之曝光裝置U3a中之光罩之圖案 之投影像面與基板之曝光面的關係。圖8係顯示光罩之圖案之投影像面與基板之曝光面之關係的說明圖。 Next, the pattern of the mask in the exposure apparatus U3a of the second embodiment will be described with reference to FIG. 8 . The relationship between the projected image surface and the exposure surface of the substrate. FIG. 8 is an explanatory diagram showing the relationship between the projected image plane of the pattern of the mask and the exposure plane of the substrate.

曝光裝置U3a,係藉由投影光學系PL將投影光束EL2成像以形成光罩M之圖案的投影像面Sm1。投影像面Sm1係將光罩M之圓筒狀之光罩圖案面以最佳聚焦狀態成像的面,為一圓筒面。此處,光罩M上之照明區域IR,如上述般係曲率半徑Rm1之曲面(在XZ面內為圓弧)之一部分,因此投影像面Sm1亦為曲率半徑Rm1之曲面(在XZ面內為圓弧)之一部分。又,光罩圖案之像所投影之基板P之平面狀表面為曝光面Sp1(曲率半徑∞)。因此,如圖8所示,奇數個投影區域PA之投影像面Sm1(左側)與偶數個投影區域PA之投影像面Sm1(右側)均在掃描曝光方向(X方向)彎曲成圓筒狀,與先前之圖6A所示者同樣地,在投影區域PA在掃描曝光方向之曝光寬度A內,具有在兩端之聚焦位置與在曝光寬度A之中心之聚焦位置之差分即面位置差(聚焦變化寬度)△Fm。此處,在掃描曝光時,基板P之表面配置於實際曝光面Spa1。曝光面Sp1及實際曝光面Spa1由於係平面,因此在投影區域PA在掃描曝光方向之曝光寬度A內,Z方向之面位置之變化量為0。實際曝光面Spa1,設定為在投影像面Sm1上於掃描曝光方向分離之相異之兩個位置FC1,FC2相交。亦即,曝光裝置U3能藉由調整投影光學系PL內之倍率修正用光學構件66等或使光罩保持機構11(第1軸AX1)及基板支承機構102之任一方微動於Z方向來將投影像面Sm1與實際曝光面Spa1之相對位置關係設定為既定之狀態。 The exposure apparatus U3a forms the projection image surface Sm1 of the pattern of the mask M by imaging the projection light beam EL2 by the projection optical system PL. The projection image surface Sm1 is a surface on which the cylindrical mask pattern surface of the mask M is imaged in an optimal focusing state, and is a cylindrical surface. Here, the illumination region IR on the mask M is a part of the curved surface of the radius of curvature Rm1 (in the XZ plane) as described above, so the projected image surface Sm1 is also the curved surface of the radius of curvature Rm1 (in the XZ plane). part of the arc). Moreover, the planar surface of the board|substrate P on which the image of a mask pattern is projected is exposure surface Sp1 (curvature radius ∞). Therefore, as shown in FIG. 8 , the projection image planes Sm1 (left side) of the odd-numbered projection areas PA and the projection image planes Sm1 (right side) of the even-numbered projection areas PA are both curved in a cylindrical shape in the scanning exposure direction (X direction), 6A , within the exposure width A of the projection area PA in the scanning exposure direction, there is a difference between the focus positions at both ends and the focus position at the center of the exposure width A, that is, the surface position difference (focus). Variation width) △Fm. Here, at the time of scanning exposure, the surface of the board|substrate P is arrange|positioned at actual exposure surface Spa1. Since the exposure surface Sp1 and the actual exposure surface Spa1 are flat surfaces, within the exposure width A of the projection area PA in the scanning exposure direction, the change amount of the surface position in the Z direction is 0. The actual exposure surface Spa1 is set to intersect on the projection image surface Sm1 at two different positions FC1 and FC2 separated in the scanning exposure direction. That is, the exposure apparatus U3 can adjust the optical member 66 for magnification correction in the projection optical system PL, etc., or finely move any one of the mask holding mechanism 11 (the first axis AX1 ) and the substrate support mechanism 102 in the Z direction. The relative positional relationship between the projection image surface Sm1 and the actual exposure surface Spa1 is set to a predetermined state.

兩個位置FC1,FC2之各個,係在其位置將投影像面Sm1內之光罩圖案像以最佳聚焦狀態曝光的位置。 Each of the two positions FC1 and FC2 is a position at which the mask pattern image in the projection image surface Sm1 is exposed in the best focus state.

藉此,本實施形態中亦同樣地,藉由圓筒狀之光罩M之旋轉運動,即能進行在掃描曝光方向之曝光寬度A內使聚焦狀態在既定範圍內連續地變化的掃描曝光,進而能抑制相對於實質聚焦之像對比變化。如上述,即使曝光 面Sp1(實際曝光面Spa1)為平面,亦能藉由將投影像面Sm1作成於掃描曝光方向彎曲之圓筒面狀,而可在不使基板P傾斜之情形下得到在外觀上擴大曝光於基板P上之光罩圖案像之焦深的效果,且能抑制像對比之變化。此種作用效果,在將來自通常之平面光罩之圖案像投影曝光於被支承成圓筒面狀之基板之表面(曝光面)的情形亦同樣能取得。 Accordingly, also in the present embodiment, by the rotational movement of the cylindrical mask M, it is possible to perform scanning exposure in which the focus state is continuously changed within a predetermined range within the exposure width A in the scanning exposure direction. Furthermore, the image contrast change with respect to the substantial focus can be suppressed. As above, even if exposed The surface Sp1 (actual exposure surface Spa1) is a flat surface, and the projected image surface Sm1 can also be formed into a cylindrical surface shape curved in the scanning exposure direction, so that it is possible to obtain an externally enlarged exposure without inclining the substrate P. The effect of the depth of focus of the mask pattern image on the substrate P, and the variation of the image contrast can be suppressed. Such an effect can also be obtained in the case of projecting and exposing a pattern image from a normal flat mask on the surface (exposure surface) of a substrate supported in a cylindrical surface shape.

此外,本實施形態之場合,圖8所示之面位置差(聚焦變化寬度)△Fm由於係與先前之式2之△Rm相同,因此能以

Figure 109113021-A0305-02-0036-6
求出。因此,以此式2為基礎,試著進行圖7之曝光裝置U3a中之投影狀態或成像特性等各種模擬後,可得到如圖9~圖17之結果。 In addition, in the case of this embodiment, since the surface position difference (focus change width) ΔFm shown in FIG. 8 is the same as ΔRm in the previous formula 2, it can be
Figure 109113021-A0305-02-0036-6
ask for. Therefore, based on this formula 2, after trying to perform various simulations such as the projection state or imaging characteristics in the exposure device U3a of FIG. 7, the results shown in FIGS. 9 to 17 can be obtained.

此外,在該模擬時,若將圓筒狀之光罩M之面P1(投影像面Sm1)之半徑Rm設為250mm(直徑ψ 500mm),將曝光用之照明光束EL1之波長λ設為i線(365nm),將投影光學系PL設為數值孔徑NA為0.0875之等倍的理想投影系,曝光面Sp1(實際曝光面Spa1)為曲率半徑∞之平面,取決於製程之焦深DOF之k2因數設為1.0,此種投影光學系PL之焦深DOF,依據λ/NA2,為寬度約48μm(相對最佳聚焦面為大致±24μm之範圍)。此外,以下之模擬中,為了說明方便,亦有將焦深DOF設為寬度40μm(相對最佳聚焦面為大致±20μm之範圍)的場合。 In addition, in this simulation, if the radius Rm of the surface P1 (projection image surface Sm1) of the cylindrical mask M is set to 250 mm (diameter ψ 500 mm), and the wavelength λ of the illumination beam EL1 for exposure is set to i Line (365nm), set the projection optical system PL as an ideal projection system with a numerical aperture NA equal to 0.0875, the exposure surface Sp1 (actual exposure surface Spa1) is a plane with a radius of curvature ∞, which depends on the k2 of the DOF of the depth of focus of the process When the factor is set to 1.0, the depth of focus DOF of the projection optical system PL is about 48 μm in width according to λ/NA 2 (with respect to the best focus plane in the range of about ±24 μm). In addition, in the following simulations, for convenience of explanation, the depth of focus DOF is also set to a width of 40 μm (with respect to the best focus plane in a range of approximately ±20 μm).

進而,圖9係顯示此種投影光學系PL在曝光寬度A內之散焦特性Cm,橫軸表示以曝光寬度A之中心位置為原點之X方向之座標,縱軸表示以最佳聚焦位置為原點(零點)之投影像面Sm1之散焦量。此圖9之圖表,亦係在先前式2中將曝光寬度A設為20mm、將使該寬度A之座標位置在-10mm至+10mm間變化而取得之面位置差△Rm描繪後的圖。如圖9之圖表所示,光罩M之面P1(投影像面Sm1)在掃描曝光方向因圓筒狀彎曲而使在曝光寬度A內之散焦特性Cm圓弧狀變 化。 Furthermore, FIG. 9 shows the defocus characteristic Cm of the projection optical system PL within the exposure width A, the horizontal axis represents the coordinates in the X direction with the center position of the exposure width A as the origin, and the vertical axis represents the best focus position The defocus amount of the projected image plane Sm1 at the origin (zero point). The graph of FIG. 9 is also a graph after plotting the surface position difference ΔRm obtained by changing the coordinate position of the width A from -10 mm to +10 mm by setting the exposure width A to 20 mm in the previous formula 2. As shown in the graph of FIG. 9 , the surface P1 (projected image surface Sm1 ) of the mask M is curved in a cylindrical shape in the scanning exposure direction, so that the defocus characteristic Cm within the exposure width A is arc-shaped. change.

圖10係在圖9所示之散焦特性Cm中模擬其點像強度相對於焦深DOF寬度之變化會如何變化的圖表,橫軸表示可能因基板P之表面或光罩圖案面之面精度誤差、投影光學系PL之像面方向之像差而產生之聚焦方向之模糊量(基板P之表面相對於散焦特性Cm在聚焦方向之偏移),縱軸表示點像強度之值。圖10中,係在圖9中之散焦特性Cm之前提下將焦深DOF為0×DOF之場合所算出之點像強度分布中在曝光寬度A中心(原點)之點像強度設為1.0而標準化。圖11係模擬在曝光寬度A內圓弧狀變化之圖9之散焦特性Cm之變化量與強度差(強度變化量)之關係一例的圖表。圖12係模擬裝置所設定之最佳聚焦時與將在裝置產生之散焦設為24μm時之在曝光寬度A內圓弧狀變化之散焦特性Cm與線與空間(L/S、L & S)圖案之對比變化之關係一例的圖表。圖13同樣係模擬在曝光寬度A內圓弧狀變化之散焦特性Cm與L/S圖案之對比率變化之關係另一例的圖表。圖14係模擬在曝光寬度A內圓弧狀變化之散焦特性Cm與L/S圖案之CD(臨界尺寸)值及截剪位準(slice level)之關係一例的圖表。圖15係模擬在曝光寬度A內圓弧狀變化之散焦特性Cm與孤立線(ISO圖案)之對比變化之關係一例的圖表。圖16係模擬在曝光寬度A內圓弧狀變化之散焦特性Cm與孤立線之對比率變化之關係另一例的圖表。圖17係模擬在曝光寬度A內圓弧狀變化之散焦特性Cm與孤立線之CD值及截剪位準之關係一例的圖表。 10 is a graph simulating how the intensity of the point image changes with respect to the change in the DOF width of the depth of focus in the defocus characteristic Cm shown in FIG. 9 . Error, amount of blur in the focus direction due to aberration in the image plane direction of the projection optical system PL (shift of the surface of the substrate P in the focus direction with respect to the defocus characteristic Cm), and the vertical axis represents the value of the point image intensity. In FIG. 10 , the point image intensity at the center (origin) of the exposure width A in the point image intensity distribution calculated when the depth of focus DOF is 0×DOF under the premise of the defocus characteristic Cm in FIG. 9 is set as 1.0 and standardized. 11 is a graph simulating an example of the relationship between the amount of change in the defocus characteristic Cm of FIG. 9 and the difference in intensity (the amount of change in intensity) in which the exposure width A changes in an arc shape. Figure 12 shows the defocus characteristics Cm and line and space (L/S, L & S) A graph showing an example of the relationship between the contrast changes of the patterns. FIG. 13 is also a graph simulating another example of the relationship between the defocus characteristic Cm and the change in the contrast ratio of the L/S pattern in the arcuate change within the exposure width A. FIG. 14 is a graph showing an example of the relationship between the defocus characteristic Cm, which simulates the arc-shaped change in the exposure width A, and the CD (critical dimension) value and the slice level of the L/S pattern. 15 is a graph simulating an example of the relationship between the defocus characteristic Cm and the contrast change of the isolated line (ISO pattern) in the arc-shaped change in the exposure width A. FIG. 16 is a graph simulating another example of the relationship between the defocus characteristic Cm and the change in the contrast ratio of the isolated line in the arc-shaped change in the exposure width A. FIG. FIG. 17 is a graph showing an example of the relationship between the defocus characteristic Cm, which simulates the arc-shaped change in the exposure width A, the CD value of the isolated line, and the clipping level.

首先,在上述條件下,將相對於在曝光寬度A內圓弧狀變化之散焦特性Cm以焦深DOF單位區分時所產生之散焦量之點像強度分布I(z)如圖10所示求出。點像強度分布為以先前說明之式I(z)=[sin(△Dz)/(△Dz)]2×I0、△Dz=(π/2/λ)×NA2×z來求出。 First, under the above conditions, the point image intensity distribution I(z) of the amount of defocus generated when the defocus characteristic Cm that changes in an arc shape within the exposure width A is divided by the depth of focus DOF unit is as shown in FIG. 10 . Show to ask. The intensity distribution of the point image is obtained by the previously described formulas I(z)=[sin(ΔDz)/(ΔDz)] 2 ×I 0 , ΔDz=(π/2/λ)×NA 2 ×z .

其次,針對假設將散焦量之平均以成為最佳聚焦之方式調整基板時之點像強度分布在曝光寬度A內圓弧狀變化之散焦寬度設為各種值例如0, 1×DOF,2×DOF,3×DOF,4×DOF之情形進行計算。又,針對在曝光寬度A內圓弧狀變化之散焦寬度為各種之情形,將該散焦量及其狹縫寬度作為基準算出從其位置使之散焦之場合的點像強度分布。以此方式,彙整在所算出之曝光寬度A唯一地決定之各曝光寬度A內中圓弧狀變化之散焦寬度時之點像強度分布與散焦的關係。具體而言,係針對將曝光裝置U3a中在曝光寬度內圓弧狀變化之散焦寬度設為0,0.5×DOF,1×DOF,1.5×DOF,2×DOF,2.5×DOF,3×DOF,3.5×DOF,4×DOF之情形之各個,算出點像強度分布與曝光時所假定之聚焦誤差、散焦之關係。 Next, set various values such as 0 for the defocus width that the point image intensity distribution in the exposure width A changes in an arc shape when the substrate is adjusted by the average of the defocus amounts to achieve the best focus. 1×DOF, 2×DOF, 3×DOF, 4×DOF are calculated. In addition, in the case where the arcuately changing defocus width within the exposure width A is various, the point image intensity distribution when defocusing from the position is calculated based on the defocus amount and the slit width. In this way, the relationship between the point image intensity distribution and the defocus when the defocus width varies in an arc shape in each exposure width A uniquely determined by the calculated exposure width A is collected. Specifically, the defocus widths of the exposure device U3a that change in an arc shape within the exposure width are set to 0, 0.5×DOF, 1×DOF, 1.5×DOF, 2×DOF, 2.5×DOF, 3×DOF , 3.5×DOF, 4×DOF for each of the cases, calculate the relationship between the point image intensity distribution and the focus error and defocus assumed at the time of exposure.

其次,針對假設將散焦量之平均以成為最佳聚焦之方式調整基板時之點像強度分布在曝光寬度A內圓弧狀變化之散焦特性Cm設為各種值例如0,1×DOF,2×DOF,3×DOF,4×DOF之情形進行計算。又,針對在曝光寬度A內圓弧狀變化之散焦特性Cm為各種之情形,將該散焦量及其狹縫寬度作為基準算出從其位置使之散焦之場合的點像強度分布。以此方式,彙整在所算出之曝光寬度A唯一地決定之各散焦特性Cm時之點像強度分布與散焦的關係。具體而言,係針對作為曝光裝置U3a在模擬上設定之如圖9所示之散焦特性Cm設為0×DOF,0.5×DOF,1×DOF,1.5×DOF,2×DOF,2.5×DOF,3×DOF,3.5×DOF,4×DOF之情形之各個,算出點像強度分布與曝光時所假定之聚焦誤差(從所設定之投影像面Sm1與基板P之表面之應設定位置關係起的偏移)之關係。此相當於圖10之圖表。 Next, set various values such as 0, 1×DOF for the defocus characteristic Cm in which the point image intensity distribution changes in an arc shape within the exposure width A when the substrate is adjusted so as to obtain the best focus by averaging the defocus amount. 2×DOF, 3×DOF, 4×DOF are calculated. In addition, in the case where the defocus characteristic Cm that changes in an arc shape within the exposure width A is various, the point image intensity distribution when defocusing from the position is calculated based on the defocus amount and the slit width. In this way, the relationship between the point image intensity distribution and the defocus at each defocus characteristic Cm uniquely determined by the calculated exposure width A is collected. Specifically, the defocus characteristics Cm shown in FIG. 9 set as the exposure device U3a in the simulation are set to 0×DOF, 0.5×DOF, 1×DOF, 1.5×DOF, 2×DOF, 2.5×DOF , 3×DOF, 3.5×DOF, and 4×DOF, calculate the intensity distribution of the point image and the focus error assumed during exposure (from the set positional relationship between the set projection image surface Sm1 and the surface of the substrate P). offset) relationship. This corresponds to the graph of Figure 10.

圖10中,係將橫軸設為散焦量[μm],將縱軸設為標準化後之點像強度值。此外,曝光裝置U3a由於係進行圓筒狀之光罩圖案面亦即投影像面Sm之旋轉運動來將投影光束EL2投射於基板P上,因此在曝光時所假定之聚焦誤差係進行二次地變化。因此,在散焦之正側與負側其點像之狀態些許不同。本實施形態中,係將散焦為+40μm之位置之點強度與-40μm之位置之點強度為對稱之強度的位置設為最佳聚焦。如圖10之圖表所示,隨著因旋轉而導致之振幅越大, 亦即隨著在曝光區域內散焦寬度沿著如圖9之散焦特性Cm變大,最佳聚焦時之點像強度即變低,散焦時之點像強度之變化亦變小。 In FIG. 10 , the horizontal axis is the defocus amount [μm], and the vertical axis is the normalized spot image intensity value. In addition, since the exposure device U3a projects the projection beam EL2 on the substrate P by performing the rotational motion of the cylindrical mask pattern surface, that is, the projection image surface Sm, the focus error assumed at the time of exposure is quadratic. Variety. Therefore, the state of the point image is slightly different on the positive side and the negative side of the defocus. In the present embodiment, the position where the defocusing point intensity at the position of +40 μm and the spot intensity at the position of −40 μm are symmetrical intensities is set as the best focus. As shown in the graph of Figure 10, as the amplitude due to rotation increases, That is, as the defocus width in the exposure area increases along the defocus characteristic Cm as shown in FIG. 9 , the point image intensity during optimal focusing becomes lower, and the variation of the spot image intensity during defocusing becomes smaller.

其次,算出改變在曝光寬度A內圓弧狀變化之散焦特性Cm之各場合之點像強度變化、亦即點像強度之最大值與最小值之差,進而算出在曝光寬度A內散焦特性Cm相異0.5DOF之兩個點之點像強度變化的差分量。將其算出結果顯示於圖11。圖11之縱軸表示兩個點像強度變化之差分量,橫軸表示每隔0.5DOF使散焦特性Cm變化時求出差分量之對象。亦即,圖11之橫軸中,例如最左邊之點像強度差(約0.02),係在使散焦特性Cm變化0×DOF時與變化0.5×DOF時的差分。根據此圖11之模擬結果,點像強度變化之差,在從散焦特性Cm已變化0.5×DOF量的狀態遷移至已變化1×DOF量的狀態時、與從散焦特性Cm已變化2.5×DOF量的狀態遷移至已變化3×DOF量的狀態時,其整體差較大。亦即,0.5×DOF至3×DOF之範圍,點像強度變化相較於散焦量之變化較和緩的效果高。因此,依據散焦特性Cm的散焦量,在設定為焦深DOF之0.5倍至3倍之振幅時效果較高。 Next, the change in the point image intensity, that is, the difference between the maximum value and the minimum value of the point image intensity, is calculated in each case where the defocus characteristic Cm that changes in an arc shape within the exposure width A is changed, and the defocus within the exposure width A is calculated. The difference component of the point image intensity change between two points whose characteristic Cm differs by 0.5DOF. The calculation result is shown in FIG. 11 . The vertical axis of FIG. 11 represents the difference component of the intensity changes of the two point images, and the horizontal axis represents the object of obtaining the difference component when the defocus characteristic Cm is changed every 0.5 DOF. That is, on the horizontal axis of FIG. 11 , for example, the point image intensity difference (about 0.02) on the far left is the difference between when the defocus characteristic Cm is changed by 0×DOF and when the defocus characteristic Cm is changed by 0.5×DOF. According to the simulation results shown in FIG. 11 , the difference between the point image intensity changes when the defocus characteristic Cm has changed by 0.5×DOF to the state where the defocus characteristic Cm has changed by 1×DOF is the same as the difference from the defocus characteristic Cm changed by 2.5 When the state of the amount of ×DOF transitions to the state that has changed by the amount of 3×DOF, the overall difference is large. That is, in the range of 0.5×DOF to 3×DOF, the change in the point image intensity is more moderate than the change in the defocus amount. Therefore, when the defocus amount according to the defocus characteristic Cm is set to an amplitude of 0.5 times to 3 times the depth of focus DOF, the effect is high.

此外,圖10之圖表中,在於基板P之表面以一定厚度塗布有光阻作為感光層之場合,於該光阻上形成為像之點像強度之值雖會因使用之抗蝕劑等而異,但根據實驗,解像力之k1因數為0.5程度之場合,點像強度只要大略為0.6以上,則能形成為像。此處,若將作為曝光裝置所預估之聚焦誤差設為至焦深DOF之定義式λ/NA2之散焦寬度(本實施形態中為±24μm)時,藉由將在曝光區域內之散焦之振幅即散焦寬度設為2.5×DOF,即能在像強度變化少的情形下良好地形成光罩圖案之像。 In addition, in the graph of FIG. 10, when the surface of the substrate P is coated with a photoresist with a certain thickness as a photosensitive layer, the value of the spot image intensity of the image formed on the photoresist varies depending on the resist used, etc. However, according to experiments, when the k1 factor of the resolution is about 0.5, the point image strength can be formed as an image as long as it is roughly 0.6 or more. Here, if the focus error estimated as the exposure device is set to the defocus width (±24 μm in this embodiment) of the definition formula λ/NA 2 to the depth of focus DOF, the When the amplitude of defocusing, that is, the defocusing width is set to 2.5×DOF, the image of the mask pattern can be formed well with little change in image intensity.

其次,針對在將待投影之光罩圖案設為L/S(線與空間)圖案之場合進行各種運算。此處,以下將散焦之考慮對象設為焦深定義式之範圍亦即在本實施形態中為±24μm。L/S(線與空間)圖案,係線寬2.5μm之線狀圖案之複數條 於線寬方向以2.5μm間隔排列成格子狀的圖案。進而,成像狀態由於會因照明條件而異,因此本實施形態中將照明光學系IL之照明條件即照明數值孔徑σ設為0.7。 Next, various calculations are performed for the case where the mask pattern to be projected is an L/S (Line and Space) pattern. Hereinafter, the consideration object of defocus is made into the range of the definition formula of the depth of focus, that is, ±24 μm in the present embodiment. L/S (line and space) pattern, which is a plurality of line patterns with a line width of 2.5μm They are arranged in a grid-like pattern at intervals of 2.5 μm in the line width direction. Furthermore, since the imaging state varies depending on the illumination conditions, in the present embodiment, the illumination numerical aperture σ, which is the illumination condition of the illumination optical system IL, is set to 0.7.

首先,在使圖9所示之散焦特性Cm變化成各種之場合,亦即與上述同樣地針對0×DOF,0.5×DOF,1×DOF,1.5×DOF,2×DOF,2.5×DOF,3×DOF,3.5×DOF,4×DOF、即以0.5DOF單位變化之場合,算出最佳聚焦狀態之L/S圖案像之光強度分布與DOF/2之散焦狀態、亦即在+24μm或-24μm算出已散焦之狀態之L/S圖案之光強度分布。 First, when changing the defocus characteristic Cm shown in FIG. 9 to various, that is, in the same manner as above, for 0×DOF, 0.5×DOF, 1×DOF, 1.5×DOF, 2×DOF, 2.5×DOF, 3×DOF, 3.5×DOF, 4×DOF, i.e., when changing in units of 0.5DOF, calculate the light intensity distribution of the L/S pattern image in the best focus state and the defocus state of DOF/2, that is, at +24μm Or -24μm to calculate the light intensity distribution of the L/S pattern in the defocused state.

根據其算出結果,在最佳聚焦狀態與DOF/2之散焦狀態之各個算出對比之變化,將其描繪後之圖為圖12。圖12之橫軸,係表示在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度,橫軸表示對比,將最佳聚焦狀態之對比變化設為0μm(BestF),將散焦狀態之對比變化設為±24μmDef。又,根據圖12所示之結果,將最佳聚焦狀態之對比[0μm(BestF)]與DOF/2散焦狀態之對比[±24μmDef]的比、亦即[0μm(BestF)]/[±24μmDef]算出後的結果顯示於圖13。圖13,橫軸為在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度,橫軸為對比。 Based on the calculation results, the changes in the respective calculated comparisons between the optimal focus state and the DOF/2 defocus state are plotted in FIG. 12 . The horizontal axis of Fig. 12 represents the defocus width resulting from the arc-shaped change in the defocus characteristic Cm within the exposure width A, and the horizontal axis represents the contrast. The contrast change in the defocused state was set to ±24 μmDef. Furthermore, according to the results shown in FIG. 12, the ratio of the contrast of the best focus state [0μm(BestF)] and the contrast of the DOF/2 defocused state [±24μmDef], that is, [0μm(BestF)]/[± 24 μmDef] calculated results are shown in FIG. 13 . In FIG. 13 , the horizontal axis is the defocus width caused by the arc-shaped change of the defocus characteristic Cm within the exposure width A, and the horizontal axis is the contrast.

又,算出在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度中之CD(Critical Dimension)值[μm]與假定了光阻之截剪位準(像之光強度)。此外,CD值在散焦為±24μm之場合,截剪位準係作為最佳聚焦之場合算出。將其算出結果顯示於圖14。圖14之橫軸,係表示在曝光寬度A內之圓弧狀變化之散焦特性Cm上之散焦寬度,縱軸左側表示CD值,右側表示截剪位準之相對光強度。 In addition, the CD (Critical Dimension) value [μm] in the defocus width resulting from the arc-shaped change in the defocus characteristic Cm within the exposure width A and the cutoff level (image light intensity) assuming the photoresist are calculated. . In addition, the CD value is calculated as the best focus when the defocus is ±24 μm, and the clipping level is calculated. The calculation result is shown in FIG. 14 . The horizontal axis of FIG. 14 represents the defocus width on the defocus characteristic Cm of the arc-shaped change within the exposure width A, the left side of the vertical axis represents the CD value, and the right side represents the relative light intensity at the clipping level.

如圖14所示,在待投影之L/S圖案之場合,相對於在曝光區域內之散焦振幅之變化,線寬之變化(CD值之變化)少,如先前圖12所示,對比大幅 變化。然而,如圖13所示,可知隨著散焦之振幅變大,在最佳聚焦狀態之對比與在±24μm散焦狀態之對比之比接近1。如上述,在沿著圓筒面狀之投影像面Sm1之周方向設定曝光寬度A之掃描曝光方式中,藉由增大在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度,能使對比率接近1,縮小最佳聚焦狀態之像對比與散焦狀態之像對比的差。藉此,在圓筒狀之光罩M(圓筒狀之投影像面Sm1)之場合,僅藉由旋轉運動,即能進行將最佳聚焦時之對比與散焦時之對比之變化抑制得較小,抑制被曝光之圖案之線寬變化,同時增大投影像面Sm1與基板P之表面在聚焦方向(圓筒面之徑方向)的變動裕度的掃描曝光。 As shown in Fig. 14, in the case of the L/S pattern to be projected, the variation of the line width (the variation of the CD value) is small relative to the variation of the defocus amplitude in the exposure area. As shown in the previous Fig. 12, the comparison substantially Variety. However, as shown in FIG. 13 , it can be seen that the ratio of the contrast in the best focus state to the contrast in the ±24 μm defocus state is close to 1 as the amplitude of the defocus becomes larger. As described above, in the scanning exposure method in which the exposure width A is set along the circumferential direction of the cylindrical projection image surface Sm1, the astigmatism is generated by increasing the defocus characteristic Cm that changes in an arc shape within the exposure width A. The focal width can make the contrast ratio close to 1, and reduce the difference between the image contrast in the best focus state and the image contrast in the defocused state. As a result, in the case of the cylindrical mask M (cylindrical projection image surface Sm1), it is possible to suppress the change of the contrast at the time of best focusing and the contrast at the time of defocusing only by the rotational movement. If it is small, it suppresses the variation of the line width of the exposed pattern and increases the variation margin of the projection image surface Sm1 and the surface of the substrate P in the focusing direction (diameter direction of the cylindrical surface) in scanning exposure.

其次,針對在將光罩之圖案設為孤立線圖案之場合進行各種運算。此處,以下將散焦之考慮對象設為焦深定義式之範圍亦即在本實施形態中為±24μm。孤立線圖案,係線寬2.5μm之線狀圖案。進而,成像狀態由於會因照明條件而異,因此將作為照明條件之照明數值孔徑σ設為0.7。 Next, various calculations are performed for the case where the pattern of the mask is an isolated line pattern. Hereinafter, the consideration object of defocus is made into the range of the definition formula of the depth of focus, that is, ±24 μm in the present embodiment. The isolated line pattern is a linear pattern with a line width of 2.5 μm. Furthermore, since the imaging state varies depending on the lighting conditions, the lighting numerical aperture σ, which is the lighting conditions, is set to 0.7.

與先前模擬之L/S圖案之廠合同樣地,首先,在使圖9所示之散焦特性Cm變化成各種之場合,亦即與上述同樣地針對0×DOF,0.5×DOF,1×DOF,1.5×DOF,2×DOF,2.5×DOF,3×DOF,3.5×DOF,4×DOF、即以0.5DOF單位變化之場合,算出最佳聚焦狀態之孤立線圖案像之光強度分布與DOF/2之散焦狀態、亦即在+24μm或-24μm算出已散焦之狀態之孤立線圖案之光強度分布。根據其算出結果,求出相對於如圖15所示之各0.5DOF之散焦寬度之變化之像對比的變化特性。 As with the factory contract of the L/S pattern simulated previously, first, in the case of changing the defocus characteristic Cm shown in FIG. DOF, 1.5×DOF, 2×DOF, 2.5×DOF, 3×DOF, 3.5×DOF, 4×DOF, that is, when changing in units of 0.5DOF, calculate the light intensity distribution of the isolated line pattern image in the best focus state and The defocused state of DOF/2, that is, the light intensity distribution of the isolated line pattern in the defocused state was calculated at +24 μm or −24 μm. From the calculation results, the variation characteristics of the image contrast with respect to the variation of the defocus width of each 0.5 DOF as shown in FIG. 15 were obtained.

圖15之橫軸,係表示在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度,橫軸表示孤立線圖案像之對比。又,根據圖15所示之結果,與先前圖13同樣地,將最佳聚焦狀態之對比[0μm(BestF)]與DOF/2散焦狀態之對比[±24μmDef]的比、亦即[0μm(BestF)]/[±24μmDef]算出後的結果顯示於圖16。圖16,橫軸為在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度,橫軸 為對比率。 The horizontal axis of FIG. 15 represents the defocus width resulting from the arcuately changing defocus characteristic Cm within the exposure width A, and the horizontal axis represents the contrast of the isolated line pattern images. Furthermore, according to the results shown in FIG. 15 , similarly to the previous FIG. 13 , the ratio of the contrast of the best focus state [0 μm (BestF)] and the contrast of the DOF/2 defocused state [±24 μmDef], that is, [0 μm (BestF)]/[±24 μmDef] calculated results are shown in FIG. 16 . Fig. 16, the horizontal axis is the defocus width generated by the defocus characteristic Cm that changes in an arc shape within the exposure width A, the horizontal axis is the contrast ratio.

又,算出在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度中之CD(Critical Dimension)值[μm]與假定了光阻之截剪位準(像之光強度)。此外,CD值在散焦為±24μm之場合,截剪位準係作為最佳聚焦之場合算出。將其算出結果顯示於圖17。圖17之橫軸,係表示在曝光寬度A內之圓弧狀變化之散焦特性Cm上之散焦寬度,縱軸左側表示CD值,右側表示截剪位準之相對光強度。如圖17所示,在圖案為孤立線之場合,相對於在曝光區域內之散焦振幅之變化之對比變化,較L/S圖案之場合小。相對於此,可知在圖案為孤立線之場合,相對於散焦量之變化,線寬(CD值)之變化大。 In addition, the CD (Critical Dimension) value [μm] in the defocus width resulting from the arc-shaped change in the defocus characteristic Cm within the exposure width A and the cutoff level (image light intensity) assuming the photoresist are calculated. . In addition, the CD value is calculated as the best focus when the defocus is ±24 μm, and the clipping level is calculated. The calculation result is shown in FIG. 17 . The horizontal axis of FIG. 17 represents the defocus width on the defocus characteristic Cm of the arc-shaped change within the exposure width A, the left side of the vertical axis represents the CD value, and the right side represents the relative light intensity at the clipping level. As shown in FIG. 17, when the pattern is an isolated line, the contrast change with respect to the change in the defocus amplitude in the exposure area is smaller than that in the case of the L/S pattern. On the other hand, when the pattern is an isolated line, it can be seen that the change in the line width (CD value) is large with respect to the change in the defocus amount.

因此,藉由將在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度設定為較大之2.5×DOF或3×DOF,即使所設定之聚焦位置產生變動,亦能抑制曝光於基板P之圖案之線寬變化。亦即,即使在曝光時因各種理由使預先設定之投影像面Sm1與基板P之表面在聚焦方向之相對位置關係變動,亦能抑制相對於該聚焦變動之線寬變化,能良好地保持依序製造於基板P上之顯示面板或電子元件的品質。又,可知最佳聚焦時之線寬2.5μm之孤立線,為2.5μm之截剪位準會隨著增大在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度而變成越大之值,其結果,線寬之變化亦相對於散焦而變小。 Therefore, by setting the defocus width caused by the defocus characteristic Cm that changes in an arc shape within the exposure width A to a larger 2.5×DOF or 3×DOF, even if the set focus position is changed, it can be suppressed The line width of the pattern exposed on the substrate P changes. That is, even if the relative positional relationship between the preset projection image surface Sm1 and the surface of the substrate P in the focus direction is changed for various reasons during exposure, the line width change with respect to the focus change can be suppressed, and the line width can be well maintained. quality of display panels or electronic components fabricated on the substrate P in sequence. In addition, it can be seen that the isolated line with a line width of 2.5 μm in the best focusing time and the clipping level of 2.5 μm will increase the defocus width generated by the defocusing characteristic Cm that changes in an arc shape within the exposure width A. As the value becomes larger, as a result, the variation of the line width becomes smaller with respect to the defocus.

又,使用先前之圖14與圖17,比較因圖案差異導致之截剪位準之差異可知,若將在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度設為2.25×DOF,相較於L/S圖案與孤立線圖案兩者之截剪位準(光強度)大致一致。因此,藉由將因散焦特性Cm而產生之散焦寬度設為2.25×DOF之範圍,即使在L/S圖案與孤立線圖案混在之光罩圖案之場合,亦能製造高品質之基板。藉此,不用考量在L/S圖案與孤立線圖案中截剪位準不一致之場合所必須之光罩圖案之線寬修正(OPC、線寬偏置)等,能使兩者共存。又,由於不需要為了線寬修正 (OPC、線寬偏置)而進行光罩之重製或為了調整而必須製造複數片光罩,因此能減低之製造之步驟與成本。又,藉由於線寬設定偏置,改變光罩圖案之一部分之線寬,亦能抑制在該部分相反地使焦深變窄等不良情形產生。 14 and FIG. 17 , and comparing the difference in the trimming level due to the difference in pattern, it can be seen that if the defocusing width caused by the arcuately changing defocusing characteristic Cm within the exposure width A is set to 2.25 ×DOF, compared to the L/S pattern and the isolated line pattern, the clipping level (light intensity) is approximately the same. Therefore, by setting the defocus width due to the defocus characteristic Cm in the range of 2.25×DOF, even in the case of a mask pattern in which the L/S pattern and the isolated line pattern are mixed, a high-quality substrate can be produced. In this way, the line width correction (OPC, line width offset) of the mask pattern, etc., which are necessary in the case where the clipping level of the L/S pattern and the isolated line pattern are inconsistent, can be made to coexist. Also, since no correction for line width is required (OPC, line width biasing) to remake the mask or to make multiple masks for adjustment, so the manufacturing steps and costs can be reduced. In addition, by changing the line width of a portion of the mask pattern by the line width setting offset, it is also possible to suppress occurrence of inconveniences such as conversely narrowing the depth of focus in that portion.

[第3實施形態] [third embodiment]

其次,參照圖18說明第3實施形態之曝光裝置U3b。此外,為了避免重複之記載,係僅針對與第2實施形態相異之部分加以說明,對與第2實施形態相同之構成要素係賦予與第2實施形態相同符號加以說明。圖18係顯示第3實施形態之曝光裝置(基板處理裝置)之整體構成的圖。第2實施形態之曝光裝置U3雖係反射光罩之光成為投影光束之反射型光罩的構成,但第3實施形態之曝光裝置U3b係使用透射過光罩之光成為投影光束之透射型光罩的構成。 Next, with reference to FIG. 18, the exposure apparatus U3b of 3rd Embodiment is demonstrated. In addition, in order to avoid repetition of description, only the part different from 2nd Embodiment is demonstrated, and the same code|symbol as 2nd Embodiment is attached|subjected to the same component as 2nd Embodiment and demonstrated. FIG. 18 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the third embodiment. The exposure apparatus U3 of the second embodiment has a configuration of a reflective mask that reflects the light from the mask to form a projection beam, but the exposure apparatus U3b of the third embodiment uses a transmissive light that transmits light through the mask to become a projection beam The composition of the cover.

第3實施形態之曝光裝置U3b中,光罩保持機構11a具備保持光罩MA之光罩保持圓筒21a與支承光罩保持圓筒21a之導輥93、驅動光罩保持圓筒21a之驅動輥94、以及驅動部96。 In the exposure apparatus U3b of the third embodiment, the mask holding mechanism 11a includes a mask holding cylinder 21a that holds the mask MA, a guide roller 93 that supports the mask holding cylinder 21a, and a drive roller that drives the mask holding cylinder 21a 94 , and the drive unit 96 .

光罩保持圓筒21a形成配置光罩MA上之照明區域IR之光罩面。本實施形態中,光罩面包含使線段(母線)繞與此線段平行之軸(圓筒形狀之中心軸)旋轉的面(以下稱為圓筒面)。圓筒面例如係圓筒之外周面、圓柱之外周面等。光罩保持圓筒21a係以例如玻璃或石英等構成,係具有一定厚度之圓筒狀,其外周面(圓筒面)形成光罩面。亦即,本實施形態中,光罩MA上之照明區域IR彎曲成從中心線具有一定之曲率半徑Rm之圓筒面狀。光罩保持圓筒21a中從光罩保持圓筒21a徑方向觀看時與光罩MA之圖案重疊之部分、例如光罩保持圓筒21a之Y軸方向兩端側以外之中央部分對照明光束EL1具有透光性。 The mask holding cylinder 21a forms a mask surface for arranging the illumination region IR on the mask MA. In the present embodiment, the mask surface includes a surface (hereinafter referred to as a cylindrical surface) that rotates a line segment (a generatrix) around an axis (central axis of a cylindrical shape) parallel to the line segment. The cylindrical surface is, for example, a cylindrical outer peripheral surface, a cylindrical outer peripheral surface, or the like. The mask holding cylinder 21a is formed of, for example, glass or quartz, and has a cylindrical shape with a certain thickness, and its outer peripheral surface (cylindrical surface) forms a mask surface. That is, in the present embodiment, the illumination region IR on the mask MA is curved in the shape of a cylindrical surface having a constant curvature radius Rm from the center line. The portion of the mask holding cylinder 21a that overlaps with the pattern of the mask MA when viewed from the radial direction of the mask holding cylinder 21a, for example, the central portion of the mask holding cylinder 21a other than both ends in the Y-axis direction, for the illumination light beam EL1 Translucent.

光罩MA,例如係作成為於平坦性佳之長條狀極薄玻璃板(例如厚度100~500μm)之一面以鉻等遮光層形成有圖案之透射型平面狀片光罩,使其順著光罩保持圓筒21a之外周面彎曲,在捲繞於(貼附於)此外周面之狀態下被使 用。光罩MA具有未形成有圖案之圖案非形成區域,於圖案非形成區域安裝於光罩保持圓筒21a。光罩MA可拆裝於光罩保持圓筒21a。光罩MA,係與第1實施形態之光罩M同樣地,亦可取代捲繞於透明圓筒母材之光罩保持圓筒21a之方式,而於透明圓筒母材之光罩保持圓筒21a之外周面直接描繪形成鉻等遮光層所形成之光罩圖案來一體化。此情形亦由光罩保持圓筒21a發揮光罩之保持構件之功能。 The mask MA, for example, is a transmissive planar sheet mask with a pattern formed on one surface of a long and thin glass plate with good flatness (eg thickness 100~500μm) with a light shielding layer such as chrome, so that it follows the light. The outer peripheral surface of the cover holding cylinder 21a is curved, and is used in a state of being wound around (attached to) the outer peripheral surface. use. The mask MA has a pattern non-formation region where no pattern is formed, and is attached to the mask holding cylinder 21a in the pattern non-formation region. The mask MA is detachable to the mask holding cylinder 21a. The mask MA is similar to the mask M of the first embodiment, and it is possible to replace the mask holding cylinder 21a wound around the transparent cylinder base material, and the mask around the transparent cylinder base material may hold a circular shape. A mask pattern formed by forming a light shielding layer such as chrome is directly drawn and integrated on the outer peripheral surface of the barrel 21a. In this case, the mask holding cylinder 21a also functions as a holding member of the mask.

導輥93及驅動輥94延伸於相對光罩保持圓筒21a之中心軸為平行之Y軸方向。導輥93及驅動輥94設置成能繞與中心軸平行之軸旋轉。導輥93及驅動輥94分別係軸方向端部之外徑較其他部分之外形大,此端部外接於光罩保持圓筒21a。如上述,導輥93及驅動輥94設置成不接觸於光罩保持圓筒21a所保持之光罩MA。驅動輥94與驅動部96連接。驅動輥94藉由將從驅動部96供應之力矩傳至光罩保持圓筒21a,以使光罩保持圓筒21a繞中心軸旋轉。 The guide roller 93 and the driving roller 94 extend in the Y-axis direction parallel to the central axis of the mask holding cylinder 21a. The guide roller 93 and the driving roller 94 are provided so as to be rotatable around an axis parallel to the central axis. The outer diameter of the guide roller 93 and the driving roller 94 is larger than that of the other parts in the axial direction end portion, respectively, and the end portion is externally connected to the mask holding cylinder 21a. As described above, the guide roller 93 and the driving roller 94 are provided so as not to contact the mask MA held by the mask holding cylinder 21a. The drive roller 94 is connected to the drive unit 96 . The driving roller 94 rotates the mask holding cylinder 21a around the center axis by transmitting the torque supplied from the driving part 96 to the mask holding cylinder 21a.

此外,光罩保持機構11a,雖具備一個導輥93但數目不限定,亦可為兩個以上。同樣地,光罩保持機構11a,雖具備一個驅動輥94但數目不限定,亦可為兩個以上。導輥93與驅動輥94中至少一個亦可配置於光罩保持圓筒21a內側,與光罩保持圓筒21a內接。又,光罩保持圓筒21a中從光罩保持圓筒21a之徑方向觀看不與光罩MA之圖案重疊之部分(Y軸方向兩端側)亦可對照明光束EL1具有透光性,亦可不具有透光性。又,導輥93及驅動輥94之一方或雙方亦可為例如圓錐台狀,其中心軸(旋轉軸)相對中心軸為非平行。 In addition, although the mask holding mechanism 11a is provided with one guide roller 93, the number is not limited, and two or more may be sufficient. Similarly, although the mask holding mechanism 11a is provided with one drive roller 94, the number is not limited, and two or more may be sufficient. At least one of the guide roller 93 and the drive roller 94 may be arranged inside the mask holding cylinder 21a, and may be in contact with the mask holding cylinder 21a. In addition, the portion of the mask holding cylinder 21a that does not overlap with the pattern of the mask MA when viewed from the radial direction of the mask holding cylinder 21a (both ends in the Y-axis direction) may have light transmittance to the illumination beam EL1, and also Not translucent. In addition, one or both of the guide roller 93 and the driving roller 94 may be, for example, a truncated cone shape, and the central axis (rotation axis) thereof may be non-parallel to the central axis.

本實施形態之光源裝置13a具備光源(圖示略)及照明光學系ILa。照明光學系ILa與複數個投影光學系PL1~PL6之各個對應地具備排列於Y軸方向之複數個(例如六個)照明光學系ILa1~ILa6。光源能與上述之各種光源裝置13a同樣地使用各種光源。從光源射出之照明光,照度分布被均一化,透過例如光纖等導光構件區分至複數個照明光學系ILa1~ILa6。 The light source device 13a of the present embodiment includes a light source (not shown) and an illumination optical system ILa. The illumination optical system ILa includes a plurality of (for example, six) illumination optical systems ILa1 to ILa6 arranged in the Y-axis direction corresponding to each of the plurality of projection optical systems PL1 to PL6 . As the light source, various light sources can be used in the same manner as the above-mentioned various light source devices 13a. The illumination light emitted from the light source has a uniform illuminance distribution, and is divided into a plurality of illumination optical systems ILa1 to ILa6 through a light guide member such as an optical fiber.

複數個照明光學系ILa1~ILa6之各個,包含透鏡等複數個光學構件。複數個照明光學系ILa1~ILa6之各個,包含例如積分光學系、桿透鏡、複眼透鏡等,藉由均一照度分布之照明光束EL1照明照明區域IR。本實施形態中,複數個照明光學系ILa1~ILa6配置於光罩保持圓筒21a內側。複數個照明光學系ILa1~ILa6之各個從光罩保持圓筒21a內側通過光罩保持圓筒21a而照明保持於光罩保持圓筒21a之外周面之光罩MA上之各照明區域。 Each of the plurality of illumination optical systems ILa1 to ILa6 includes a plurality of optical members such as lenses. Each of the plurality of illumination optical systems ILa1 to ILa6 includes, for example, an integrator optical system, a rod lens, a fly-eye lens, and the like, and illuminates the illumination region IR with an illumination beam EL1 of uniform illuminance distribution. In the present embodiment, the plurality of illumination optical systems ILa1 to ILa6 are arranged inside the mask holding cylinder 21a. Each of the plurality of illumination optical systems ILa1 to ILa6 passes through the mask holding cylinder 21a from the inside of the mask holding cylinder 21a to illuminate each illumination area on the mask MA held on the outer peripheral surface of the mask holding cylinder 21a.

光源裝置13a藉由照明光學系ILa1~ILa6導引從光源射出之光,將被導引之照明光束EL1從光罩保持圓筒21a內部照射於光罩MA。光源裝置13,係藉由照明光束EL1以均一明度照明光罩保持圓筒11a所保持之光罩MA之一部分(照明區域IR)。此外,光源亦可配置於光罩保持圓筒21a內側,亦可配置於光罩保持圓筒21a外側。又,光源亦可係與曝光裝置U3b不同之裝置(外部裝置)。 The light source device 13a guides light emitted from the light source by the illumination optical systems ILa1 to ILa6, and irradiates the guided illumination light beam EL1 to the mask MA from the inside of the mask holding cylinder 21a. The light source device 13 illuminates a part (illumination area IR) of the mask MA held by the mask holding cylinder 11a with uniform brightness by the illumination beam EL1. In addition, the light source may be arranged inside the mask holding cylinder 21a, or may be arranged outside the mask holding cylinder 21a. In addition, the light source may be an apparatus (external apparatus) different from the exposure apparatus U3b.

曝光裝置U3a,在使用透射型光罩作為光罩時,亦與曝光裝置U3、U3a同樣地,藉由將投影像面與曝光面之關係如上所述設定成於曝光面有兩處作為最佳聚焦狀態之位置的關係,而能得到與上述相同之效果。 When the exposure device U3a uses a transmissive mask as a mask, similarly to the exposure devices U3 and U3a, the relationship between the projection image surface and the exposure surface is set so that there are two locations on the exposure surface as described above. The same effect as the above can be obtained depending on the positional relationship of the focus state.

[第4實施形態] [4th Embodiment]

其次,參照圖19說明第4實施形態之曝光裝置U3c。此外,為了避免重複之記載,係僅針對與第1實施形態相異之部分加以說明,對與第1實施形態相同之構成要素係賦予與第1實施形態相同符號加以說明。圖19係顯示第4實施形態之曝光裝置(基板處理裝置)之整體構成的圖。第1實施形態之曝光裝置U3雖係使用將圓筒狀之反射型光罩M保持於能旋轉之光罩保持圓筒21的構成,但第4實施形態之曝光裝置U3c則係將平板狀之反射型光罩MB保持於能移動之光罩保持機構11b的構成。 Next, the exposure apparatus U3c of 4th Embodiment is demonstrated with reference to FIG. 19. FIG. In addition, in order to avoid repetition of description, only the part different from 1st Embodiment is demonstrated, and the same code|symbol as 1st Embodiment is attached|subjected to the same component as 1st Embodiment and demonstrated. FIG. 19 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the fourth embodiment. Although the exposure apparatus U3 of 1st Embodiment uses the structure which hold|maintains the cylindrical reflection type mask M on the rotatable mask holding cylinder 21, the exposure apparatus U3c of 4th Embodiment uses the flat plate-shaped mask M. The reflective mask MB is held by the movable mask holding mechanism 11b.

第4實施形態之曝光裝置U3c中,光罩保持機構11b具備保持平面狀之光罩MB之光罩載台110與使光罩載台110在與中心面CL正交之面內沿著X 方向掃描移動的移動裝置(圖示略)。 In the exposure apparatus U3c of the fourth embodiment, the mask holding mechanism 11b includes a mask stage 110 for holding the planar mask MB, and the mask stage 110 along the X in a plane orthogonal to the center plane CL. A mobile device that scans and moves in the direction (illustration omitted).

由於圖19之光罩MB之面P1係實質上與XY面平行之平面,因此從光罩MB反射之投影光束EL2之主光線係與XY面垂直。因此,照明光罩MB上之各照明區域IR1~IR6之來自照明光學系IL1~IL6之照明光束EL1之主光線亦配置成相對XY面成垂直。 Since the plane P1 of the mask MB in FIG. 19 is a plane substantially parallel to the XY plane, the chief ray of the projection light beam EL2 reflected from the mask MB is perpendicular to the XY plane. Therefore, the chief rays of the illumination light beams EL1 from the illumination optical systems IL1 to IL6 of the illumination regions IR1 to IR6 on the illumination mask MB are also arranged to be perpendicular to the XY plane.

在照明於光罩MB之照明光束EL1之主光線與XY面成垂直之場合,偏光分束器PBS,配置成射入1/4波長板41之照明光束EL1之主光線之射入角θ1成為布魯斯特角θB,在1/4波長板41反射之照明光束EL1之主光線與XY面成垂直。伴隨此偏光分束器PBS之配置之變更,照明光學模組ILM之配置亦適當變更。 When the chief ray of the illumination beam EL1 illuminating the mask MB is perpendicular to the XY plane, the polarization beam splitter PBS is arranged so that the incident angle θ1 of the chief ray of the illumination beam EL1 entering the quarter-wave plate 41 becomes At Brewster's angle θB, the chief ray of the illumination light beam EL1 reflected by the quarter-wave plate 41 is perpendicular to the XY plane. Along with the change in the configuration of the polarizing beam splitter PBS, the configuration of the illumination optical module ILM is also appropriately changed.

又,在從光罩MB反射之投影光束EL2之主光線與XY面成垂直之場合,投影光學模組PLM之第1光學系61所包含之第1偏向構件70之第1反射面P3,係設成使來自偏光分束器PBS之投影光束EL2反射,使反射之投影光束EL2通過第1透鏡群71而射入第1凹面鏡72的角度。具體而言,第1偏向構件70之第1反射面P3,係相對第2光軸BX2(XY面)實質設定成45°。 In addition, when the chief ray of the projection light beam EL2 reflected from the mask MB is perpendicular to the XY plane, the first reflection surface P3 of the first deflection member 70 included in the first optical system 61 of the projection optical module PLM is The angle is set so that the projection light beam EL2 from the polarization beam splitter PBS is reflected, and the reflected projection light beam EL2 passes through the first lens group 71 and enters the first concave mirror 72 . Specifically, the first reflection surface P3 of the first deflection member 70 is substantially set at 45° with respect to the second optical axis BX2 (XY plane).

又,第4實施形態亦與先前之圖2同樣地,於XZ面內觀察時,從光罩MB上之照明區域IR1(及IR3、IR5)中心點至照明區域IR2(及IR4、IR6)中心點之X方向之周長,係設定成與從順著支承面P2之基板P上之投影區域PA1(及PA3、PA5)之中心點至第2投影區域PA2(及PA4、PA6)中心點之周長實質相等。 Also, in the fourth embodiment, similarly to the previous FIG. 2, when viewed in the XZ plane, from the center point of the illumination area IR1 (and IR3, IR5) on the mask MB to the center of the illumination area IR2 (and IR4, IR6) The perimeter in the X direction of the point is set to be between the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6). The perimeters are substantially equal.

圖19之曝光裝置U3c亦同樣地,下位控制裝置16控制光罩保持機構11之移動裝置(掃描曝光用之線性馬達或微動用之致動器等),與基板支承圓筒25之旋轉同步地驅動光罩載台110。圖19之曝光裝置U3c,必須在光罩MB往+X方向之同步移動中進行掃描曝光後,進行使光罩MB返回至-X方向之初始位置 的動作(捲回)。因此,在使基板支承圓筒25以一定速度連續旋轉而將基板P以等速持續進給時,在光罩MB之捲回動作期間係不進行對基板P上之圖案曝光,而係在基板P之搬送方向斷續地(分離地)形成面板用圖案。然而,實用上,由於掃描曝光時之基板P之速度(此處為周速)與光罩MB之速度係假定為50~100mm/s,因此在光罩MB之捲回時只要將光罩載台110以例如500mm/s之最高速驅動,即能縮小形成於基板P上之面板用圖案在搬送方向之空白處。 Similarly to the exposure device U3c of FIG. 19 , the lower control device 16 controls the moving device of the mask holding mechanism 11 (a linear motor for scanning exposure, an actuator for fine movement, etc.) in synchronization with the rotation of the substrate support cylinder 25 The reticle stage 110 is driven. The exposure device U3c of FIG. 19 must perform scanning exposure while the mask MB moves synchronously in the +X direction, and then return the mask MB to the initial position in the -X direction. action (rewind). Therefore, when the substrate support cylinder 25 is continuously rotated at a constant speed and the substrate P is continuously fed at a constant speed, the pattern exposure on the substrate P is not performed during the rewinding operation of the mask MB, and the The conveying direction of P is intermittently (separately) formed with the pattern for panels. However, in practice, since the speed of the substrate P (here, the peripheral speed) and the speed of the mask MB during scanning exposure are assumed to be 50-100 mm/s, when the mask MB is rewound, it is only necessary to carry the mask The stage 110 is driven at a maximum speed of, for example, 500 mm/s, that is, the blank space in the conveying direction of the panel pattern formed on the substrate P can be reduced.

其次,參照圖20說明第4實施形態之曝光裝置U3c中之光罩之圖案之投影像面與基板之曝光面的關係。圖20係說明光罩之圖案之投影像面與基板之曝光面的關係的說明圖。 Next, the relationship between the projected image surface of the pattern of the mask and the exposure surface of the substrate in the exposure apparatus U3c of the fourth embodiment will be described with reference to FIG. 20 . 20 is an explanatory diagram illustrating the relationship between the projected image surface of the pattern of the mask and the exposure surface of the substrate.

曝光裝置U3c,係藉由投影光學系PL將投影光束EL2成像以形成光罩MB之圖案的投影像面Sm2。投影像面Sm2係將光罩MB之圖案成像的位置,係作為最佳聚焦之位置。此處,光罩MB如上述係以平面配置。藉此,投影像面Sm2亦成為平面(在ZX平面中為直線)。又,曝光裝置U3c中,基板P之表面為曝光面Sp。此處,所謂曝光面Sp係基板P之表面。基板P如上所述保持於圓筒形狀之基板支承圓筒25。藉此,曝光面Sp成為曲率半徑Rm之曲面(在ZX平面中為曲線)。又,曝光面Sp,係與掃描曝光方向正交之方向為曲面的軸。因此,圖20所示之曝光面Sp,成為相對掃描曝光方向彎曲之曲線。曝光面Sp,在投影區域PA在掃描曝光方向之曝光寬度A之位置之變化量為△p。投影像面Sm2為平面。因此,在投影區域PA在掃描曝光方向之曝光寬度A之位置之變化量為0。此處,曝光裝置U3c中,係將相對於投影像面Sm2之曝光面Sp之位置設為實際曝光面Spa。實際曝光面Spa係於掃描曝光方向中在與投影像面Sm2相異之兩個位置Pa2,Pb2相交。此外,曝光裝置U3c能藉由調整投影光學系PL之各光學構件之位置或藉由光罩保持機構11b及基板支承機構12之任一方調整光罩MB與基板P之間隔,來使相對於投影像面Sm2之曝光面之位置變化。 The exposure apparatus U3c forms the projection image surface Sm2 of the pattern of the mask MB by imaging the projection light beam EL2 by the projection optical system PL. The projection image plane Sm2 is the position where the pattern of the mask MB is imaged, and is the position of the best focus. Here, the mask MB is arranged in a plane as described above. Thereby, the projected image surface Sm2 also becomes a plane (a straight line in the ZX plane). Moreover, in exposure apparatus U3c, the surface of the board|substrate P is exposure surface Sp. Here, the so-called exposure surface Sp is the surface of the board|substrate P. The substrate P is held by the cylindrical substrate support cylinder 25 as described above. Thereby, the exposure surface Sp becomes a curved surface (curved in the ZX plane) of the radius of curvature Rm. In addition, the exposure surface Sp is the axis of the curved surface in the direction orthogonal to the scanning exposure direction. Therefore, the exposure surface Sp shown in FIG. 20 becomes a curve curved with respect to the scanning exposure direction. On the exposure surface Sp, the change amount of the position of the exposure width A in the scanning exposure direction in the projection area PA is Δp. The projected image surface Sm2 is a plane. Therefore, the amount of change in the position of the exposure width A in the scanning exposure direction in the projection area PA is zero. Here, in the exposure apparatus U3c, the position of the exposure surface Sp with respect to the projection image surface Sm2 is made into the actual exposure surface Spa. The actual exposure surface Spa intersects at two positions Pa2, Pb2 different from the projected image surface Sm2 in the scanning exposure direction. In addition, the exposure apparatus U3c can adjust the position of each optical member of the projection optical system PL, or adjust the distance between the mask MB and the substrate P by either the mask holding mechanism 11b and the substrate support mechanism 12, so that the projection relative to the projection can be adjusted. The position of the exposure surface of the image surface Sm2 changes.

曝光裝置U3c中,投影像面Sm2與實際曝光面Spa係在相異之兩個位置Pa2,Pb2相交,藉此,在曝光寬度A內,在實際曝光面Spa上之位置Pa2中聚焦狀態成為最佳聚焦,在實際曝光面Spa上之位置Pb2中聚焦狀態成為最佳聚焦。 In the exposure device U3c, the projected image surface Sm2 and the actual exposure surface Spa intersect at two different positions Pa2 and Pb2, whereby within the exposure width A, the focus state becomes the highest at the position Pa2 on the actual exposure surface Spa. The best focus is obtained, and the focus state becomes the best focus at the position Pb2 on the actual exposure surface Spa.

曝光裝置U3c,即使使光罩MB之表面為平面,使基板P之表面為圓筒形狀,亦能與曝光裝置U3、U3a、U3b同樣地,對光罩圖案投影至基板P側之掃描曝光方向之投影像面Sm2與被曝光之基板P之曝光面Sp賦予圓筒形狀差。進而,曝光裝置U3c中,投影像面Sm2與實際曝光面Spa係在相異之兩個位置Pa2,Pb2相交,在相異之兩個位置中曝光面之聚焦狀態成為最佳聚焦。 In the exposure apparatus U3c, even if the surface of the mask MB is flat and the surface of the substrate P is formed into a cylindrical shape, it is possible to project the mask pattern on the substrate P side in the scanning exposure direction similarly to the exposure apparatuses U3, U3a, and U3b. The projected image surface Sm2 and the exposure surface Sp of the board|substrate P to be exposed give a cylindrical shape difference. Furthermore, in the exposure device U3c, the projected image surface Sm2 and the actual exposure surface Spa intersect at two different positions Pa2, Pb2, and the focus state of the exposure surface becomes the best focus at the two different positions.

藉此,曝光裝置U3c亦同樣地,藉由光罩保持圓筒21之旋轉運動,即能在掃描曝光方向之曝光寬度A內使聚焦狀態連續地變化,進而能抑制相對於實質聚焦之像對比變化。又,曝光裝置U3c亦能得到與曝光裝置U3相同之各種效果。如上述,即使在僅將投影像面與曝光面(基板P之表面)之一方作成曲面之場合,亦能得到與將投影像面與曝光面兩方作成曲面之場合相同的效果。 Accordingly, the exposure device U3c can also continuously change the focus state within the exposure width A in the scanning exposure direction by the rotational movement of the mask holding cylinder 21, thereby suppressing the image contrast with respect to the substantial focus. Variety. Moreover, the exposure apparatus U3c can also acquire various effects similar to the exposure apparatus U3. As described above, even when only one of the projection image surface and the exposure surface (the surface of the substrate P) is formed as a curved surface, the same effect as when both the projection image surface and the exposure surface are formed as curved surfaces can be obtained.

此處,曝光裝置U3c,能以將上述式之基板P之掃描曝光方向之投影像面Sm2之圓筒半徑r1設為0之下述式求出在曝光寬度A內圓弧狀變化之散焦寬度△。 Here, the exposure apparatus U3c, the radius of the cylindrical projection can be to the scanning exposure of the substrate P above formula direction Sm2 of the image plane 0 of r 1 is set by the following equation arcuate bulk of changes in exposure width A Focal width △.

△=r2-((r2 2)-(A/2)2)1/2 △=r 2 -((r 2 2 )-(A/2) 2 ) 1/2

此處,曝光裝置U3c中,由於光罩圖案之投影像面Sm2之曲率半徑為∞,因此在曝光寬度A內圓弧狀變化之散焦特性Cm,僅以先前之式3求出。亦即,在曝光裝置U3c之場合之散焦特性Cm(=△Rp)係以

Figure 109113021-A0305-02-0048-7
來求出。 Here, in the exposure apparatus U3c, since the curvature radius of the projected image surface Sm2 of the mask pattern is ∞, the defocus characteristic Cm that changes in an arc shape within the exposure width A can be obtained only by the aforementioned formula 3. That is, the defocus characteristic Cm (=ΔRp) in the case of the exposure device U3c is given by
Figure 109113021-A0305-02-0048-7
to ask for.

此外,本實施形態之曝光裝置,在光罩保持機構與基板支承機構 之中,以曲面保持者為第1支承部材,以曲面或平面支承者為第2支承部材。 In addition, the exposure apparatus of the present embodiment has a mask holding mechanism and a substrate support mechanism. Among them, the one held by the curved surface is the first support member, and the one supported by the curved surface or the plane is the second support member.

<曝光方法> <Exposure method>

其次,參照圖21說明曝光方法。圖21係顯示曝光方法之流程圖。 Next, an exposure method will be described with reference to FIG. 21 . Figure 21 is a flow chart showing the exposure method.

圖21所示之曝光方法中,首先係以基板支承機構將基板P支承於支承面P2(步驟S101),以光罩保持機構將光罩M支承於面P1(步驟S102)。藉此,光罩M與基板P成為對向之狀態。此外,步驟S101與步驟S102之順序亦可相反。又,面P1、支承面P2之其中任一方為第1面,另一方為第2面。第1面係以既定曲率彎曲成圓筒面状之形狀。 In the exposure method shown in FIG. 21, first, the substrate P is supported on the support surface P2 by the substrate support mechanism (step S101), and the mask M is supported on the surface P1 by the mask holding mechanism (step S102). Thereby, the mask M and the board|substrate P become the state which opposes. In addition, the sequence of step S101 and step S102 may be reversed. Moreover, any one of the surface P1 and the support surface P2 is a 1st surface, and the other is a 2nd surface. The first surface is a cylindrical shape curved with a predetermined curvature.

其次,調整相對於曝光面之聚焦位置(步驟S103)。具體而言,係在基板P之表面所設定之投影區域PA之曝光寬度A內,在掃描曝光方向包含兩處最佳聚焦位置之位置設定聚焦位置。 Next, the focus position with respect to the exposure surface is adjusted (step S103). Specifically, within the exposure width A of the projection area PA set on the surface of the substrate P, the focus position is set at a position including two optimal focus positions in the scanning exposure direction.

聚焦位置之調整結束後,使基板P與光罩M之掃描曝光方向之相對移動(旋動)開始(步驟S104)。亦即,藉由基板支承機構及光罩保持機構之至少一方開始使基板P與光罩M之至少一方移動於掃描曝光方向的動作。 After the adjustment of the focus position is completed, the relative movement (rotation) of the substrate P and the mask M in the scanning exposure direction is started (step S104). That is, the operation of moving at least one of the substrate P and the mask M in the scanning exposure direction is started by at least one of the substrate support mechanism and the mask holding mechanism.

在使相對移動開始後,使對投影區域PA內之投影光束之投射開始(步驟S105)。亦即,將來自照明光之照明區域IR所配置之光罩之圖案的光束投射於配置基板P之投影區域PA。藉此,圖21所示之曝光方法,係在基板P之曝光面中,將在掃描曝光方向包含兩處最佳聚焦位置之光束投射於投影區域。 After the relative movement is started, the projection of the projection light beam in the projection area PA is started (step S105). That is, the light beam from the pattern of the mask in which the illumination area IR of illumination light is arrange|positioned is projected on the projection area|region PA of the arrangement|positioning board|substrate P. Thereby, in the exposure method shown in FIG. 21 , on the exposure surface of the substrate P, a light beam including two optimal focus positions in the scanning exposure direction is projected onto the projection area.

曝光方法係以以上之方式,藉由投射調整聚焦位置後之光束,而能在基板P之曝光面中,將在掃描曝光方向包含兩處最佳聚焦位置之光束投射於投影區域。藉此,能得到上述之各種効果。此外,本實施形態中雖說明了調整聚焦位置之場合,但依裝置之設定不同,亦可使在掃描曝光方向包含兩處最佳聚焦位置的位置成為聚焦位置。 In the exposure method, by projecting the light beam after adjusting the focus position, in the exposure surface of the substrate P, the light beam including two optimal focus positions in the scanning exposure direction can be projected on the projection area. Thereby, the various effects mentioned above can be acquired. In addition, although the case where the focus position is adjusted has been described in this embodiment, depending on the setting of the apparatus, a position including two optimal focus positions in the scanning exposure direction may be set as the focus position.

<元件製造方法> <Element manufacturing method>

其次,參照圖22,說明元件製造方法。圖22係顯示元件製造系統之元件製造方法的流程圖。 Next, with reference to FIG. 22, the element manufacturing method is demonstrated. FIG. 22 is a flowchart showing a device manufacturing method of the device manufacturing system.

圖22所示之元件製造方法,首先,係進行例如使用有機EL等自發光元件形成之顯示面板之功能、性能設計,以CAD等設計所需之電路圖案及配線圖案(步驟S201)。接著,根據以CAD等設計之各種的每一層圖案,製作所需層量之光罩M(步驟S202)。並準備捲繞有作為顯示面板之基材之可撓性基板P(樹脂薄膜、金屬箔膜、塑膠等)的供應用捲筒FR1(步驟S203)。又,於此步驟S203中準備之捲筒狀基板P,可以是視需要將其表面改質者、或事前已形成底層(例如透過印記(imprint)方式之微小凹凸)者、或預先積層有光感應性之功能膜或透明膜(絶緣材料)者。 In the device manufacturing method shown in FIG. 22, first, the function and performance design of a display panel formed by using self-luminous elements such as organic EL is performed, and required circuit patterns and wiring patterns are designed by CAD (step S201). Next, according to various patterns of each layer designed by CAD or the like, a photomask M of a required layer quantity is produced (step S202 ). Then, a supply roll FR1 on which the flexible substrate P (resin film, metal foil film, plastic, etc.) serving as the base material of the display panel is wound is prepared (step S203 ). In addition, the roll-shaped substrate P prepared in this step S203 may have its surface modified as necessary, or a bottom layer (for example, micro unevenness by imprinting) has been formed in advance, or a layer of light may be pre-laminated Inductive functional film or transparent film (insulating material).

接著,於基板P上形成構成顯示面板元件之電極或以配線、絶緣膜、TFT(薄膜半導體)等構成之底板層,並以積層於該底板之方式形成以有機EL等自發光元件構成之發光層(顯示像素部)(步驟S204)。於此步驟S204中,雖包含使用先前各實施形態所說明之曝光裝置U3使光阻層曝光之習知微影製程,但亦包含使取代光阻而塗有感光性矽烷耦合劑之基板P圖案曝光來於表面形成親撥水性之圖案的曝光製程、使光感應性觸媒層圖案曝光並以無電解鍍敷法形成金屬膜圖案(配線、電極等)的濕式製程、或以含有銀奈米粒子之導電性墨水等描繪圖案的印刷製程等之處理。 Next, electrodes constituting display panel elements or a substrate layer composed of wirings, insulating films, TFTs (thin film semiconductors), etc. are formed on the substrate P, and light emission composed of self-luminous elements such as organic EL is formed by laminating on the substrate. layer (display pixel portion) (step S204). In this step S204, although the conventional lithography process of exposing the photoresist layer by using the exposure device U3 described in the previous embodiments is included, it also includes making the substrate P pattern coated with the photosensitive silane coupling agent instead of the photoresist Exposure comes from the exposure process of forming a hydrophilic and water-repellent pattern on the surface, the wet process of exposing the photosensitive catalyst layer pattern and forming the metal film pattern (wiring, electrodes, etc.) by electroless plating, or the Processing such as the printing process of drawing patterns such as conductive ink of rice particles.

接著,針對以捲筒方式於長條基板P上連續製造之每一顯示面板元件切割基板P、或於各顯示面板元件表面貼合保護膜(耐環境障壁層)或彩色濾光片膜等,組裝元件(步驟S205)。接著,進行顯示面板元件是否可正常作動、或是否滿足所欲性能及特性之檢查步驟(步驟S206)。經由以上方式,即能製造顯示面板(可撓性顯示器)。 Next, the substrate P is cut for each display panel element continuously manufactured on the elongated substrate P in a roll method, or a protective film (environmentally resistant barrier layer) or a color filter film is attached to the surface of each display panel element, etc., Components are assembled (step S205). Next, a step of checking whether the display panel elements can operate normally, or whether the desired performance and characteristics are satisfied (step S206 ) is performed. In the above manner, a display panel (flexible display) can be manufactured.

A:曝光寬度 A: Exposure width

Ae,As:端部 Ae,As: end

AX1:第1軸 AX1: 1st axis

AX2:第2軸 AX2: 2nd axis

FC1、FC2、FC3:位置 FC1, FC2, FC3: Location

PA:投影區域 PA: Projection area

Rm:曲率半徑 Rm: radius of curvature

Rp:曲率半徑 Rp: radius of curvature

Sm:投影像面 Sm: projection image plane

Spa:實際曝光面 Spa: Actual exposure surface

Sp:曝光面 Sp: exposure surface

Claims (8)

一種掃描曝光方法,使具有可撓性之長條之基板與光罩圖案相對於投影光學系於掃描曝光方向移動,將前述光罩圖案曝光於前述基板之表面,其包括:使旋轉圓筒繞既定軸旋轉,而使前述基板於長度方向移動的動作,該旋轉圓筒係沿著自前述既定軸起既定半徑彎曲成圓筒狀之圓周面使前述基板之長度方向之一部分於前述掃描曝光方向彎曲並進行支承;朝向前述光罩圖案上之照明區域照射照明光的動作;以及藉由前述投影光學系,將前述照明區域內出現之來自前述光罩圖案之投影光束朝向與前述照明區域對應之前述基板側之投影區域投射,藉此使前述光罩圖案之像沿著於前述掃描曝光方向彎曲之投影像面成像,並且以彎曲之前述投影像面和彎曲之前述基板之表面於在前述投影區域內之前述掃描曝光方向分離之兩處分別相交之方式,設定前述投影像面與前述基板之表面的聚焦方向之位置關係的動作。 A scanning exposure method, which moves a flexible long substrate and a mask pattern relative to a projection optical system in a scanning exposure direction, and exposes the mask pattern on the surface of the substrate, comprising: making a rotating cylinder around A predetermined axis is rotated to move the substrate in the longitudinal direction, and the rotating cylinder is to move a portion of the longitudinal direction of the substrate in the scanning exposure direction along a circumferential surface curved in a cylindrical shape with a predetermined radius from the predetermined axis. bending and supporting; irradiating illumination light toward the illumination area on the mask pattern; and directing the projection light beam from the mask pattern appearing in the illumination area toward the illumination area corresponding to the illumination area by the projection optical system The projection area on the substrate side is projected, whereby the image of the mask pattern is formed along the projection image surface curved in the scanning exposure direction, and the curved projection image surface and the curved surface of the substrate are used in the projection image. The operation of setting the positional relationship between the projection image plane and the focusing direction of the surface of the substrate in such a way that the two points separated by the scanning exposure direction in the area intersect with each other. 如請求項1之掃描曝光方法,其中,在將藉由前述投影光學系投射於前述基板之前述投影光束之前述投影區域在前述掃描曝光方向之中點之散焦量設為△、將前述投影光學系之焦深設為DOF時,以滿足0.5<△/DOF≦3之方式設定前述投影光學系、前述旋轉圓筒之各個。 The scanning exposure method according to claim 1, wherein when the defocus amount at the midpoint of the projection region of the projection light beam projected on the substrate by the projection optical system in the scanning exposure direction is Δ, the projection When the focal depth of the optical system is set to DOF, each of the projection optical system and the rotating cylinder is set so as to satisfy 0.5<Δ/DOF≦3. 如請求項2之掃描曝光方法,其中,前述散焦量△與前述焦深DOF之關係,係設定成滿足1≦△/DOF。 The scanning exposure method of claim 2, wherein the relationship between the defocus amount Δ and the depth of focus DOF is set to satisfy 1≦Δ/DOF. 如請求項2之掃描曝光方法,其中,藉由前述投影光學系以最佳聚焦投影於前述投影區域內之前述光罩圖案之前述彎曲之投影像面與前述彎曲之基板之表面的聚焦方向之距離之差,設定成以在前述掃描曝光方向之前述投影區域之前述中點之位置作為軸在前述掃描曝光方向線對稱地變化。 The scanning exposure method according to claim 2, wherein a difference between the curved projection image plane of the mask pattern projected on the projection area by the projection optical system with the best focus and the focusing direction of the surface of the curved substrate The distance difference is set to change line-symmetrically in the scanning exposure direction with the position of the midpoint of the projection area in the scanning exposure direction as an axis. 一種元件製造方法,在片狀之具有可撓性之長條之基板上形成電子元件之圖案,其包括:第1步驟,在前述基板之表面形成感光性機能層;第2步驟,藉由請求項1至4中任一項之掃描曝光方法,在形成於前述彎曲之基板之表面的前述感光性機能層掃描曝光與前述電子元件之圖案對應之光罩圖案之投影像;以及第3步驟,對已曝光之前述感光性機能層進行濕式處理,形成前述電子元件之圖案。 A device manufacturing method for forming a pattern of an electronic device on a sheet-like elongated substrate with flexibility, comprising: a first step of forming a photosensitive functional layer on the surface of the substrate; a second step, by requesting The scanning exposure method according to any one of Items 1 to 4, wherein the photosensitive functional layer formed on the surface of the curved substrate scans and exposes a projection image of a mask pattern corresponding to the pattern of the electronic element; and the third step, The exposed photosensitive functional layer is subjected to wet processing to form the pattern of the electronic element. 如請求項5之元件製造方法,其中,前述第1步驟係藉由塗布裝置來形成前述感光性機能層,該塗布裝置係將光阻劑、感光性之親撥液性改質材、感光性鍍敷還原材、UV硬化樹脂中之任一種之感光性機能液塗布在前述基板之表面。 The device manufacturing method according to claim 5, wherein the first step is to form the photosensitive functional layer by a coating device that coats a photoresist, a photosensitive liquid repellent modifier, and a photosensitive material. The photosensitive functional liquid of either a plating reduction material or a UV curable resin is coated on the surface of the aforementioned substrate. 如請求項5之元件製造方法,其中,前述第3步驟係藉由使前述基板通過對前述感光性機能層進行濕式處理之濕式處理裝置、與去除附著在經濕式處理之前述基板的液滴或霧滴並調整前述基板之水分含有量之乾燥裝置,在前述基板上形成前述電子元件之圖案。 The device manufacturing method according to claim 5, wherein the third step is performed by passing the substrate through a wet processing apparatus that wet-processes the photosensitive functional layer, and removing the substrate attached to the wet-processed substrate. A drying device that adjusts the moisture content of the substrate with droplets or mist, and forms the pattern of the electronic component on the substrate. 如請求項5之元件製造方法,其中,前述基板於前述長度方向連續地依序通過前述塗布裝置、前述曝光裝置、前述濕式處理裝置、以及前述乾燥裝置。 The device manufacturing method according to claim 5, wherein the substrate continuously passes through the coating device, the exposure device, the wet processing device, and the drying device in this order in the longitudinal direction.
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