CN105303222A - Laser imaging anti-counterfeit label and preparation method thereof - Google Patents
Laser imaging anti-counterfeit label and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a laser projection type anti-counterfeit label and a preparation method thereof, and belongs to the fields of optical anti-counterfeiting and micro-nano processing. The surface of the label is provided with a single layer or multiple layers of disordered nano-scale embossment structures, and an anti-counterfeiting image can be presented after laser irradiation. The surface structure of the label is obtained by means of computer aided optical design, and by means of diffraction optics and Fourier optics, the anti-counterfeiting image is converted into a phase modulation structure on the surface of the label. Under the same incident light condition, different anti-counterfeiting images are corresponding to different label surfaces. The preparation method of the label comprises the steps of preparing a mother template by mean of optical etching, prepaing a nickel template by means of electroplating, and preparing the label by means of nano-impression. The laser projection type anti-counterfeit label has the advantages that a common laser pen is used as an identification tool, the projected anti-counterfeit image is high in brightness and strong in visual impart force, and different from the characteristics of a common laser holographic label that an optical variable image is low in contrast and difficult to discriminate, the laser projection type anti-counterfeit label can effectively improve the anti-counterfeit performance.
Description
Technical field
The invention belongs to optical anti-counterfeiting and micro-nano technology field, be specifically related to the antifalsification label that the micro-nano manufacturing process such as diffraction optics design and photoetching, reactive ion etching, nano impression prepare laser projection micro nano structure.
Background technology
Anti-counterfeiting technology refers to forge and the measure taked to prevent, and can accurately discern the false from the genuine within the specific limits, and is not easy the technology that is imitated and copies.China is annual because the loss that counterfeit and shoddy goods cause reaches hundreds billion of Renminbi.Hit counterfeit and shoddy goods, improve anti-counterfeiting technology very urgent.Along with the appearance of digital scanning device and color printer, the threshold that traditional anti-counterfeiting technology is replicated and cracks is more and more lower, needs the exploitation of antifalse technology badly, and nanometer technology is false proof provides new solution route for this reason.
It is false proof that the features such as it is strong that optical anti-counterfeiting has visual impact, easy memory are comparatively applicable to the public.The discriminating fashion that current optical anti-counterfeiting label major part adopts light to become, namely can see that different images or color change in different angles, concavo-convex optical grating construction or the multilayer film system of adopting distinguishes the light of different-waveband in white light to reach the effect of variable color more.Wherein use the most extensive with laser hologram label.From nineteen sixty First laser instrument invention so far, laser technology is widely applied to industry, the fields such as medical science, national defence and scientific research.The appearance of laser technology facilitates the development of holography, and within 1969, Benton proposes rainbow hologram art, starts the false proof examination being widely used in banknote, card, passport, security and social famous-brand and high-quality goods the eighties.Rainbow holography is that the interference and diffraction principle of using up is recorded before the certain wave of object and with the form of interference fringe, by a kind of holography of white light reconstruction filtergram.Feature adds slit in the appropriate location of light path when being record, and during white light reconstruction, the reproduction image of object and slit changes because of the difference of wavelength, thus can see the picture of different colours at diverse location.First generation rainbow holography technology, due to technological diffusion, loses anti-counterfeit capability substantially, and follow-up have a lot of follow-on holographic technique, as Computer Image Processing improves hologram, adopts the encrypted hologram picture etc. of Image Coding encryption technology.
Laser beam can be directly used in processing owing to having high-energy, has developed a set of laser micropore anti-counterfeiting technology in anti-counterfeiting technology.Namely, under blanket gas effect, utilize the laser pulse of high-strength high-density energy to burn micropore on label or paper, be combined into discernible specific pattern thus reach antifalse effect.View mode is generally to look squarely and loses picture and text, to the picture and text that light is hidden as seen; Or look squarely as dot matrix image, to the visible multi-level image of light side-looking etc.Still widely using at present, especially on banknote and card surface.
Can learn from above two typical laser antifalsification technologies and correlation technique, existing laser multi-purpose is in recording image information or be directly used in processing, does not still use laser beam itself as the technology of anti false information carrier.There is hundreds of family in the manufacturer that can produce laser holographic anti counterfeiting label at present, the diffusion of technology and the problem of production management, some is really identified not easy to identify, and the mark of some emulation can be mixed the spurious with the genuine again.These greatly reduce the anti-counterfeiting performance of laser holographic anti counterfeiting label.Meanwhile, in the preparation technology of label, how to reduce costs and obtain cheap finished product, can determine this label be promoted.
Summary of the invention
The object of the invention is, for anti-counterfeit field provides a kind of laser-projection-type antifalsification label, by the microstructure of design surface medium, can change laser beam into image, and cannot observe directly any information at label surface.Meanwhile, integrated circuit technique, electroplating technology and nanometer embossing combine by the present invention, provide a kind of preparation method of this laser-projection-type antifalsification label.
The technical solution used in the present invention is as follows:
A kind of laser-projection-type antifalsification label, this antifalsification label exports anti-counterfeiting image under laser irradiates, and the surface of described antifalsification label is nanoscale medium microstructure unordered in a jumble, and this microstructure is two-dimensional plane phase modulated structure; Laser is radiated at and described microstructure occurs for transmission or reflection and diffraction, interferes phase slake and interferes and strengthen, thus export anti-counterfeiting image on projecting plane, far field; When the anti-counterfeiting image exported is symmetric figure, described antifalsification label surface is the completely unordered relief microstructure of individual layer, and relief microstructure size is suitable with wavelength, and dominant bit phase etching depth is 2 π; When the anti-counterfeiting image exported is asymmetrical graphic, described antifalsification label surface is double-deck completely unordered relief microstructure, and the phase differential between double-decker is π.
The preparation method of above-mentioned a kind of laser-projection-type antifalsification label, comprises the following steps:
(1) optical design: pass through ray-tracing software, under known incident light field and known output plane light field condition, calculate the parameter on the intermediate optical elements surface that incident laser passes through, namely the parameter on the intermediate optical elements surface obtained is obtained after data and figure process to the surface structure image of described antifalsification label;
(2) caster makes: the surface structure image calculated is made lithography mask version, use projection lithography and reactive ion etching technology to have on the silicon chip of photoresist in spin coating and prepare microstructure mother matrix, and effects on surface carries out release treatment;
(3) nickel template construct is impressed: utilize caster, nanometer embossing is used to suppress the macromolecule subtemplate contrary with caster structure, utilize electron beam to steam metallic nickel as conductive layer to subtemplate again, use electroplating technology to obtain metallic nickel template mutually isostructural with master mold version;
(4) label processing: use metallic nickel template and nanometer embossing compacting transparent membrane, obtain transmission-type antifalsification label.
Described step (4) namely obtains reflective antifalsification label in the back side evaporated metal layer of this antifalsification label after obtaining transmission-type antifalsification label.Preferably, the thickness of described metal level is 100nm.
The depth of microstructure of described transmission-type antifalsification label is Ф λ/2 π (n
1-n
0), the depth of microstructure of described reflective antifalsification label is Ф λ/2 π 2n
0, wherein, Ф is phasic difference, λ is incident wavelength, n
1for label material refractive index, n
0for air refraction.
Further, the macromolecule submodule version in described step (3) adopts PMMA, and the temperature of its nano impression is 140 DEG C, and pressure is 0.5Mpa; After nano impression, heat-insulation pressure keeping 5min, is cooled to room temperature.
Further, the transparent membrane of described step (4) adopts PC material, and the temperature of its nano impression is 150 DEG C, and pressure is 0.5MPa; After nano impression, heat-insulation pressure keeping 2min, is cooled to room temperature.
Different from traditional Techniques of Optical Security, the present invention adopts the mode of laser projection to discharge anti-counterfeiting information, changes the carrier of anti-counterfeiting information by laser beam into, and the antifalsification label designed by the present invention changes laser into image.Antifalsification label of the present invention is decomposed into mixed and disorderly, the unordered microstructure of label surface by the computing of optical transform software, microstructure all cannot analyze any information in macroscopic view or microcosmic, its effect carries out scattering, diffraction and interference to laser beam spot, is finally combined into security pattern.Microstructure minimum dimension is suitable with optical wavelength, and constructional depth is greater than optical wavelength, therefore cannot be copied by photoetching and printing technique.
Laser-projection-type antifalsification label of the present invention, by common laser pen as identification of means, the anti_counterfeiting mark brightness projected is large, visual impact strong, is different from the feature that common laser holographic label light variation image contrast is little, be difficult to discriminating, effectively can improves the anti-counterfeiting performance of label.The present invention has following beneficial effect:
(1) antifalsification label surface is nanoscale medium microstructure, has slight rainbow effect, surface aesthetic under natural light.
(2) irradiated can be passed through transmission or reconstruction by reflection anti-counterfeiting information by laser, simple to operate, effect is directly perceived, and visual impact is strong.Common laser pen is used to get final product reappearance anti-forge information.
(3) label surface medium microstructure minimum dimension is hundred nano-scale, and constructional depth can reach micron order, complex-shaped unordered, is difficult to analyzed cracking.
(4) female stamp fabrication uses photoetching, reactive ion etching, nano impression and electroplating technology to combine, and complex procedures, relates to equipment many, and technology difficulty is large, can effectively avoid being imitated, and ensure anti-counterfeiting performance.
(5) label production run uses nanometer embossing, and with low cost, efficiency is high, and output is large, can reduce rapidly the process costs of whole label, be easy to the marketing of product.
Accompanying drawing explanation
Fig. 1 is the surface structure schematic diagram of laser-projection-type antifalsification label of the present invention, and (a) is underlying structure surface, and (b) is superstructure surface.
Fig. 2 is the two-layered medium microstructure tangent plane schematic diagram of antifalsification label of the present invention, 1-superstructure, 2-understructure, 3-label support layer, 4-metallic reflector.
Fig. 3 is the anti-counterfeiting information reproduction form of antifalsification label of the present invention, and (a) is that reflective label reproduces schematic diagram for transmission-type label reproduction schematic diagram, (b); 5-laser pen, 6-laser beam, 7-transmission-type label, the reflective label of 8-, 9-reproduced image.
Fig. 4 is mother matrix projection alignment schematic diagram and RIE process silicon face Morphology schematic diagram, a () is first time projection exposure schematic diagram and RIE etch silicon result schematic diagram, (b) be that second time alignment exposes schematic diagram and RIE etch silicon result schematic diagram; 10-ultraviolet system, 11-is with the photo etched mask system of alignment, 12-projection convergent-divergent optical system, the silicon substrate of 13-spin coating ultraviolet photoresist, master structure schematic diagram after the ion etching of 14-primary first-order equation, the mother matrix with individual layer etching structure of 15-spin coating ultraviolet photoresist, the double-deck etching structure master structure schematic diagram after the ion etching of 16-secondary reaction.
Fig. 5 is preparation technology's process flow diagram of laser-projection-type antifalsification label of the present invention.
Fig. 6 is optical Design schematic diagram, and 17-inputs the anti-counterfeiting image of computing machine, 18-first lens, the diffraction element surface structure that 19-calculates, 20-second lens, the real image that 21-obtains through diffraction element.
Embodiment
The present invention uses diffraction optics to design the antifalsification label of combining nano stamping technique for the preparation of anti-counterfeit field, and its surface is mixed and disorderly, unordered medium microstructure, irradiates can discharge anti-counterfeiting information down at laser.
1, label surface Microstructure Optics design
Label surface microstructure is calculated by optical design software.Namely the optical field distribution of known incident light and the optical field distribution of output plane that will reach, by calculating the parameter of intermediate optical elements, make incident light optical field distribution after optical system meet designing requirement.Design software mainly adopts ray tracing, subsequently by the method for designing that transport function is evaluated.Obtain intermediate optical elements be label surface microstructure graph.Because different output light fields needs different optical systems, the therefore corresponding different surface micro-structure of the antifalsification label of each different pattern.
As shown in Figure 6, input in computing machine by anti-counterfeiting image 17, input light is collimated monochromatic ligth, carries out inverse Fourier transform can obtain diffraction element surface structure 19 by the first lens 18.By the second lens again Fourier transform try to achieve monochromatic light by the optical field distribution of diffraction element on projecting plane, be the image of laser pen by projecting out after label surface.
As shown in Figure 1, when output image is symmetric figure, label surface is the completely unordered relief microstructure of individual layer, and the embossment structure degree of depth plays a phase regulating action, and dominant bit phase etching depth is 2 π.When output pattern is asymmetric image, because diffraction has positive and negative first-order diffraction so single layer structure can produce two images of full symmetric in situ, therefore need on single layer structure, add a Rotating fields again and introduce phase differential π increasing removal image, so asymmetric image label surface structure is more complicated.For transmission-type antifalsification label, light is by the phase differential Ф=2 π (n in dielectric structure and air
1-n
0) d/ λ, its depth of microstructure is Ф λ/2 π (n
1-n
0), for reflective antifalsification label, light is by the phase differential Ф=2 π n in dielectric structure and air
02d/ λ, its depth of microstructure is Ф λ/2 π 2n
0, wherein, Ф is phasic difference, λ is incident wavelength, n
1for label material refractive index, n
0for air refraction, the anti-counterfeiting information reproduction form of two kinds of labels as shown in Figure 3.
In the present embodiment, use virtuallab software to carry out structure calculation to icon " nanoimprint ", obtain each one of bottom data figure and upper layer data figure, the corresponding physical size 512um*512um of each data plot, corresponding minimum dimension is 500nm.Data plot layout is become to 0.5cm*0.5cm data plot, changes the data bitmap that SF-100 maskless photoetching machine uses into.Use label material to be PC refractive index 1.58, LASER Light Source is 532nm wavelength, and label construction individual depths is 458nm, and the double-deck degree of depth is 916nm.
2, mastering
During development in laboratory, adopt maskless photoetching machine (USA I/M P company SF-100) to replace stepper and carry out mastering.Preparation process is as shown in Figure 4 and Figure 5:
(1) the thick BCI3511 ultraviolet photoresist of spin coating 600nm on silicon chip, uses maskless photoetching machine 20:1 convergent-divergent, carries out ground floor graph exposure, uses TMAH development 30s, obtains the photoetching offset plate figure of patterning.
(2) electron beam plated film instrument evaporation 15nm chromium is used.Use that acetone is ultrasonic lifts off photoresist, obtain the micro structured pattern of chromium.
(3) sample is put into inductively coupled plasma etching apparatus, use CHF
3/ CF
4/ O
2as etching gas, the etch silicon degree of depth is 460nm.
Etching parameters: reaction pressure 2pa, CF
410sccm, CHF
325sccm, O
21.5sccm.Power coil power 30W, upper and lower power 45W, etching time 1600s.
(4) use of taking-up sample is washed chrome liquor and is washed away chromium film, leaves the microstructure of silicon.
(5) on the silicon chip of existing ground floor structure, then the BCI-3511 photoresist of spin coating 600nm, use maskless photoetching machine alignment second layer pattern, ensure that overlay error is less than 500nm.
(6) repeat step (3)-(5), obtain second layer microstructure.Use acetone, isopropyl alcohol, deionization ultrasonic cleaning silicon template successively.
(7) use oxygen plasma treatment sample surfaces 1min, gaseous state release treatment 24h, obtain the silicon mother matrix of surface hydrophobicity.Oxygen plasma parameter: reaction pressure 2pa, O
210sccm, power 30w.Time 60s.
3, subtemplate and nickel Template preparation
(1) use silicon mother matrix in nano marking press, 140 DEG C, impress the PMMA plate that 2mm is thick under 0.5MP condition, heat-insulation pressure keeping 5min, is cooled to room temperature, removes pressure, obtains PMMA material subtemplate.
(2) conductive layer using the thick nickel dam of electron beam evaporation plating 80nm to electroplate as next step.
(3) subtemplate having plated conductive layer is put into electroplating bath to electroplate, obtain the nickel template identical with master structure.
Electroplating parameter: nickel sulfamic acid 375g/L, nickel chloride 15g/L, boric acid 30-40g/L, lauryl sodium sulfate 0.5g/L.Temperature 40-60 DEG C.pH4.0。Current density 1-2Adm-2..Electroplating time 3-5 hour.Nickel plate thickness 400-600um.
4, label preparation
(1) use nickel template in nano marking press, the PC material that impression 0.8mm is thick, 160 DEG C, 0.5MP pressure, heat-insulation pressure keeping 3min, obtains transmission-type label.
(2) using the reverse side electron beam evaporation plating 100nm aluminium of clear label as reflection horizon, obtain reflective label.
Claims (7)
1. a laser-projection-type antifalsification label, this antifalsification label exports anti-counterfeiting image under laser irradiates, and it is characterized in that, the surface of described antifalsification label is nanoscale medium microstructure unordered in a jumble, and this microstructure is two-dimensional plane phase modulated structure; Laser is radiated at and described microstructure occurs for transmission or reflection and diffraction, interferes phase slake and interferes and strengthen, thus export anti-counterfeiting image on projecting plane, far field; When the anti-counterfeiting image exported is symmetric figure, described antifalsification label surface is the completely unordered relief microstructure of individual layer, and relief microstructure size is suitable with wavelength, and dominant bit phase etching depth is 2 π; When the anti-counterfeiting image exported is asymmetrical graphic, described antifalsification label surface is double-deck completely unordered relief microstructure, and the phase differential between double-decker is π.
2. the preparation method of a kind of laser-projection-type antifalsification label as claimed in claim 1, is characterized in that, comprise the following steps:
(1) optical design: pass through ray-tracing software, under known incident light field and known output plane light field condition, calculate the parameter on the intermediate optical elements surface that incident laser passes through, namely the parameter on the intermediate optical elements surface obtained is obtained after data and figure process to the surface structure image of described antifalsification label;
(2) caster makes: the surface structure image calculated is made lithography mask version, use projection lithography and reactive ion etching technology to have on the silicon chip of photoresist in spin coating and prepare microstructure mother matrix, and effects on surface carries out release treatment;
(3) nickel template construct is impressed: utilize caster, nanometer embossing is used to suppress the macromolecule subtemplate contrary with caster structure, utilize electron beam to steam metallic nickel as conductive layer to subtemplate again, use electroplating technology to obtain metallic nickel template mutually isostructural with master mold version;
(4) label processing: use metallic nickel template and nanometer embossing compacting transparent membrane, obtain transmission-type antifalsification label.
3. preparation method according to claim 2, is characterized in that, described step (4) namely obtains reflective antifalsification label in the back side evaporated metal layer of this antifalsification label after obtaining transmission-type antifalsification label.
4. preparation method according to claim 3, is characterized in that, the depth of microstructure of described transmission-type antifalsification label is Ф λ/2 π (n
1-n
0), the depth of microstructure of described reflective antifalsification label is Ф λ/2 π 2n
0, wherein, Ф is phasic difference, λ is incident wavelength, n
1for label material refractive index, n
0for air refraction.
5. preparation method according to claim 3, is characterized in that, the thickness of described metal level is 100nm.
6. according to the preparation method one of claim 2 to 5 Suo Shu, it is characterized in that, the macromolecule submodule version in described step (3) adopts PMMA, and the temperature of its nano impression is 140 DEG C, and pressure is 0.5Mpa; After nano impression, heat-insulation pressure keeping 5min, is cooled to room temperature.
7. according to the preparation method one of claim 2 to 5 Suo Shu, it is characterized in that, the transparent membrane of described step (4) adopts PC material, and the temperature of its nano impression is 150 DEG C, and pressure is 0.5MPa; After nano impression, heat-insulation pressure keeping 2min, is cooled to room temperature.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106054294A (en) * | 2016-04-29 | 2016-10-26 | 沈阳造币有限公司 | Metal coin or stamp with DOE (Diffraction Optical Element) anti-counterfeit pattern and manufacturing method thereof |
| CN107719851A (en) * | 2017-09-27 | 2018-02-23 | 中国科学院光电技术研究所 | One kind becomes pattern anti-fake relief type security devices |
| WO2019088929A1 (en) * | 2017-11-03 | 2019-05-09 | Agency For Science, Technology And Research | Holographic security element and method of forming thereof |
| CN110315898A (en) * | 2019-07-03 | 2019-10-11 | 深圳市冠盟贴纸制品有限公司 | A kind of manufacture craft of planar coloured plastic relief and laser projection |
| CN111300963A (en) * | 2019-11-22 | 2020-06-19 | 珠海市瑞明科技有限公司 | Variable lattice holographic invisible pattern forming method |
| CN111751918A (en) * | 2020-06-17 | 2020-10-09 | 四川芯辰光微纳科技有限公司 | Microstructure diffraction slice and preparation thereof, and anti-counterfeiting device comprising microstructure diffraction slice |
| CN112590419A (en) * | 2020-11-24 | 2021-04-02 | 湖南大学 | Optical anti-counterfeiting mark with nano composite structure |
| CN112613591A (en) * | 2020-12-29 | 2021-04-06 | 苏州印象镭射科技有限公司 | Anti-counterfeit label and preparation method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1297491B1 (en) * | 2000-07-03 | 2006-05-03 | Optaglio Limited | Device with anti-counterfeiting diffractive structure |
| CN1979341A (en) * | 2005-12-08 | 2007-06-13 | 中国科学院微电子研究所 | Method for making ultraviolet solidified nano impression formboard |
| US20070180183A1 (en) * | 2004-03-01 | 2007-08-02 | Tdk Corporation | Hologram retrieval method and holographic recording and reproducing apparatus |
| CN100374295C (en) * | 2006-03-30 | 2008-03-12 | 上海市激光技术研究所 | Method for making moving-sensing picture-elements holographic maste mask pattern with multiple coding encrypting |
| CN101966784A (en) * | 2010-08-03 | 2011-02-09 | 陈毕峰 | Laser anti-counterfeit texture label and manufacturing method thereof |
-
2015
- 2015-11-12 CN CN201510770189.7A patent/CN105303222B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1297491B1 (en) * | 2000-07-03 | 2006-05-03 | Optaglio Limited | Device with anti-counterfeiting diffractive structure |
| US20070180183A1 (en) * | 2004-03-01 | 2007-08-02 | Tdk Corporation | Hologram retrieval method and holographic recording and reproducing apparatus |
| CN1979341A (en) * | 2005-12-08 | 2007-06-13 | 中国科学院微电子研究所 | Method for making ultraviolet solidified nano impression formboard |
| CN100374295C (en) * | 2006-03-30 | 2008-03-12 | 上海市激光技术研究所 | Method for making moving-sensing picture-elements holographic maste mask pattern with multiple coding encrypting |
| CN101966784A (en) * | 2010-08-03 | 2011-02-09 | 陈毕峰 | Laser anti-counterfeit texture label and manufacturing method thereof |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106054294A (en) * | 2016-04-29 | 2016-10-26 | 沈阳造币有限公司 | Metal coin or stamp with DOE (Diffraction Optical Element) anti-counterfeit pattern and manufacturing method thereof |
| CN107719851A (en) * | 2017-09-27 | 2018-02-23 | 中国科学院光电技术研究所 | One kind becomes pattern anti-fake relief type security devices |
| WO2019088929A1 (en) * | 2017-11-03 | 2019-05-09 | Agency For Science, Technology And Research | Holographic security element and method of forming thereof |
| US11155113B2 (en) | 2017-11-03 | 2021-10-26 | Agency For Science, Technology And Research | Holographic security element and method of forming thereof |
| CN110315898A (en) * | 2019-07-03 | 2019-10-11 | 深圳市冠盟贴纸制品有限公司 | A kind of manufacture craft of planar coloured plastic relief and laser projection |
| CN111300963A (en) * | 2019-11-22 | 2020-06-19 | 珠海市瑞明科技有限公司 | Variable lattice holographic invisible pattern forming method |
| CN111751918A (en) * | 2020-06-17 | 2020-10-09 | 四川芯辰光微纳科技有限公司 | Microstructure diffraction slice and preparation thereof, and anti-counterfeiting device comprising microstructure diffraction slice |
| CN112590419A (en) * | 2020-11-24 | 2021-04-02 | 湖南大学 | Optical anti-counterfeiting mark with nano composite structure |
| CN112613591A (en) * | 2020-12-29 | 2021-04-06 | 苏州印象镭射科技有限公司 | Anti-counterfeit label and preparation method thereof |
| CN112613591B (en) * | 2020-12-29 | 2024-04-09 | 苏州印象镭射科技有限公司 | Anti-counterfeiting label and preparation method thereof |
| CN114994937A (en) * | 2022-06-24 | 2022-09-02 | 山东泰宝信息科技集团有限公司 | Holographic anti-counterfeiting image manufacturing device and manufacturing method |
| CN114994937B (en) * | 2022-06-24 | 2024-01-12 | 山东泰宝信息科技集团有限公司 | Holographic anti-counterfeiting image manufacturing device and manufacturing method |
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